CN107645300A - A kind of current multiplexing low-power consumption radio-frequency transmitter - Google Patents
A kind of current multiplexing low-power consumption radio-frequency transmitter Download PDFInfo
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- CN107645300A CN107645300A CN201710963368.1A CN201710963368A CN107645300A CN 107645300 A CN107645300 A CN 107645300A CN 201710963368 A CN201710963368 A CN 201710963368A CN 107645300 A CN107645300 A CN 107645300A
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Abstract
The invention discloses a kind of current multiplexing low-power consumption radio-frequency transmitter, including：Transformer, the single-ended radio frequency signal or external differential signal that antenna is received are converted to differential signal and from first, second differential voltage node output difference signal through its primary secondary conversion；Common-gate input stage, transformer is exported and carries out capacitive cross coupling amplification and from the three, the 4th differential voltage node output difference amplified signals；Common source amplifying circuit, transformer output is subjected to mutual conductance amplification in the case where not increasing current drain and from the three, the 4th differential voltage node output difference amplified signals；Common-mode voltage stabilizing circuit, stablize the common-mode voltage of the three, the 4th differential voltage nodes；Down coversion on-off circuit, for differential amplification signal progress down coversion to be obtained into intermediate-freuqncy signal and from the five, the 6th differential voltage node output difference current intermediate frequency signals under the control of local oscillation signal；Trans-impedance amplifier, for difference current intermediate frequency signal to be switched into voltage signal and amplifies output.
Description
Technical field
The present invention relates to a kind of radio-frequency transmitter, more particularly to a kind of current multiplexing low-power consumption radio frequency based on transformer
Receiver.
Background technology
With the continuous promotion of radio-frequency technique, low-power consumption radio-frequency transmitter is used widely in increasing occasion,
Such as implantable medical device, wearable device, arrowband Internet of Things etc..Traditional receivers Front-end Design is typically used and individually penetrated
Frequency module cascade forms, and generally comprises：Single-ended transfer difference transformer (generally being welded in chip exterior plate level), low noise amplification
Device, frequency mixer etc., this design takes more area, while it is larger to consume power consumption.
In addition, to improve the key index sensitivity of receiver, reduction receiver noise factor is generally required.Receiver is made an uproar
The main source of sonic system number is the mutual conductance thermal noise of the first order (being usually low-noise amplifier) input pipe, and mutual conductance thermal noise tribute
The electric current offered and consumed is inversely proportional, therefore to reduce the existing method of input pipe mutual conductance thermal noise and usually require to consume more electricity
Stream so that taking into account low noise and low-power consumption turns into design difficulty.
Fig. 6 is traditional single tube grid structure for amplifying altogether, it usually needs adds Zs in metal-oxide-semiconductor source class to be biased, Zs can
Think inductance, resistance or current-mirror structure, but Zs is located at input port, noise contribution is larger, it is necessary to reduce noise as far as possible.
The content of the invention
To overcome above-mentioned the shortcomings of the prior art, the purpose of the present invention is that providing a kind of current multiplexing low-power consumption penetrates
Frequency receiver, while receiver consumption electric current is reduced, to obtain low-noise factor and high sensitivity.
In view of the above and other objects, the present invention proposes a kind of current multiplexing low-power consumption radio-frequency transmitter, including：
Transformer, for the conversion of single-ended radio frequency signal or external differential signal through its primary-secondary for receiving antenna
Be converted to differential signal and from the first differential voltage node P1 and the second differential voltage node P2 output difference signals；
Common-gate input stage, capacitive cross coupling amplification is carried out and from the 3rd for the differential signal that exports the transformer
Differential voltage node P3 and the 4th differential voltage node P4 output difference amplified signals；
Common source amplifying circuit, for the differential signal that the transformer exports to be entered in the case where not increasing current drain
The extra mutual conductance amplification of row and from the 3rd differential voltage node P3 and the 4th differential voltage node P4 output difference amplified signals；
Common-mode voltage stabilizing circuit, it is poor for stablizing the 3rd differential voltage node P3 and the 4th using negative-feedback principle
Component voltage node P4 common-mode voltage；
Down coversion on-off circuit, under the control of local oscillation signal that the common-gate input stage, common source amplifying circuit is defeated
The differential amplification signal that goes out carries out down coversion and obtains intermediate-freuqncy signal and from the 5th differential voltage node P5 and the 6th differential voltage section
Point P6 output difference current intermediate frequency signals；
Trans-impedance amplifier, the difference current intermediate frequency signal for the down coversion on-off circuit to be exported switch to voltage signal
And amplify output.
Further, the current multiplexing low-power consumption radio-frequency transmitter also includes down coversion switching tube offset generating circuit,
For the switch metal-oxide-semiconductor produce DC offset voltage and phase locked loop PLL in future difference sheet to the down coversion on-off circuit
Grid of the signal that shakes coupled to the switch metal-oxide-semiconductor of the down coversion on-off circuit.
Further, the common-gate input stage uses current multiplexing structure with the common source amplifying circuit.
Further, the common-gate input stage includes the first NMOS tube, the second NMOS tube, the first coupled capacitor, the second coupling
Close electric capacity, the first biasing resistor and the second biasing resistor, the in-phase end of the secondary coil of the transformer and the first coupled capacitor
One end, the source electrode of the first NMOS tube be connected to form the first differential voltage node P1, the secondary coil of the transformer
One end of end of oppisite phase and second coupled capacitor, the source electrode of the second NMOS tube are connected to form the second differential voltage node
P2, the other end of first coupled capacitor are connected to the grid of second NMOS tube and one end of the second biasing resistor, institute
The other end for stating the second coupled capacitor is connected to the grid of first NMOS tube and one end of first biasing resistor, described
The other end of the other end of first biasing resistor and the second biasing resistor is connected to the first bias voltage, and first NMOS tube connects
The 3rd differential voltage node P3 is met, the drain electrode of second NMOS tube connects the 4th differential voltage node P4.
Further, the common source amplifying circuit includes the 3rd PMOS, the 4th PMOS, the 3rd coupled capacitor, the 4th
Coupled capacitor, the 3rd biasing resistor and the 4th biasing resistor, one end of the 3rd coupled capacitor connect first differential electrical
Node P1 is pressed, described 4th coupled capacitor one end connects the second differential voltage node P2, the other end of the 3rd coupled capacitor
It is connected with the grid of the 4th PMOS and one end of the 4th biasing resistor, one end and the 3rd PMOS of the 4th coupled capacitor
Grid and one end of the 3rd biasing resistor be connected, the other end of the 3rd biasing resistor and the other end of the 4th biasing resistor
The second bias voltage is connected to, the drain electrode of the 3rd PMOS connects the 3rd differential voltage node P3, the 4th PMOS
Drain electrode connect the 4th differential voltage node P4, the 3rd PMOS is connected the common mode with the source electrode of the 4th PMOS
Voltage stable circuit.
Further, the common-mode voltage stabilizing circuit includes the 5th PMOS, the 5th resistance, the 6th resistance and the first fortune
Put, the source electrode of the 3rd PMOS and the source electrode of the 4th PMOS are connected to the drain electrode of the 5th PMOS, benchmark common mode
Voltage is connected to the inverting input of first amplifier, and the output end of first amplifier is connected to the 5th PMOS
Grid, the source electrode connection supply voltage of the 5th PMOS, one end of the 5th resistance connects the 3rd differential voltage
One end of node P3, the other end and the 6th resistance is connected to the in-phase input end of first amplifier, the 6th resistance it is another
One end connects the 4th differential voltage node P4.
Further, the down coversion on-off circuit includes the 6th NMOS tube, the 7th NMOS tube, the 8th NMOS tube, the 9th
NMOS tube, the source electrode of the 6th NMOS tube, the source electrode of the 7th NMOS tube connect the 4th differential voltage node P4, and described the
The source electrode of eight NMOS tubes, the source electrode of the 9th NMOS tube connect the 3rd differential voltage node P3, the 6th NMOS tube, the 8th
The drain electrode of NMOS tube and the trans-impedance amplifier are connected to form the 6th differential voltage node P6, the 7th NMOS tube, the
The drain electrode of nine NMOS tubes is connected to form the 5th differential voltage node P5, the grid of the 7th NMOS tube with the trans-impedance amplifier
Pole, the anti-phase local oscillation signal of grid phase downlink connection of the 8th NMOS tube, grid, the grid of the 9th NMOS tube of the 6th NMOS tube
Phase downlink connection is the same as phase local oscillation signal.
Further, the trans-impedance amplifier includes intermediate frequency amplifier, the 7th resistance and the 8th resistance, the 7th NMOS
Group that pipe drains, the drain electrode of the 9th NMOS tube is connected with the in-phase input end of the intermediate frequency amplifier and one end of the 7th resistance
Into the 5th differential voltage node P5, the drain electrode of the 6th NMOS tube, the drain electrode of the 8th NMOS tube and the intermediate frequency amplifier
Inverting input and one end of the 8th resistance be connected to form the 6th differential voltage node P6, the intermediate frequency amplifier it is anti-
Phase output terminal is connected with the other end of the 7th resistance, the in-phase output end of the intermediate frequency amplifier and the 8th resistance
The other end is connected, and the benchmark common-mode voltage is connected to the common-mode voltage input of the intermediate frequency amplifier, the 3rd difference
Voltage node P3, the 4th differential voltage node P4, the 5th differential voltage node P5, the 6th differential voltage node P6 and intermediate frequency are put
Big device output end IF is respectively provided with same benchmark common-mode voltage.
Further, the down coversion on-off circuit include 8 switch metal-oxide-semiconductors, it is described across group amplifier include two groups across
Impedance amplifier, to form orthogonal mixer with 8 switch metal-oxide-semiconductors, there is provided 4 road difference outputs of In-Phase-Quadrature.
Further, the down coversion switching tube offset generating circuit includes the 11st NMOS tube, the 12nd NMOS tube, the
Two amplifiers, the 11st resistance, the 12nd resistance, the 13rd resistance, the 14th resistance, the 11st coupled capacitor and the 12nd coupling
Electric capacity, the benchmark common-mode voltage are connected to the inverting input of second amplifier, the output end connection of second amplifier
To the grid of the 11st NMOS tube, the source ground of the 11st NMOS tube, the drain electrode of the 11st NMOS tube connects
One end of the 11st resistance is connected to, the other end of the 11st resistance is connected to the homophase input of second amplifier
End, the source electrode of the 12nd NMOS tube, the grid of the 12nd NMOS tube and one end of drain electrode and the 12nd resistance, the 13rd resistance
One end, one end of the 14th resistance are connected to form the 3rd bias voltage, another termination supply voltage of the 12nd resistance, and the 13rd
The other end of resistance is connected to form with one end of the 11st coupled capacitor and the grid of the 6th NMOS tube, the grid of the 9th NMOS tube
With phase local oscillation signal, the other end of the 14th resistance and the grid of one end of the 12nd coupled capacitor and the 7th NMOS tube, the 8th
The grid of NMOS tube is connected to form anti-phase local oscillation signal, the other end of the 11st coupled capacitor and the 12nd coupled capacitor it is another
End is connected to the difference local oscillation signal output end of phaselocked loop.
Compared with prior art, a kind of current multiplexing low-power consumption radio-frequency transmitter of the present invention is reducing receiver consumption electric current
While, low-noise factor and high sensitivity are obtained, and save the area of chip.
Brief description of the drawings
Fig. 1 is a kind of circuit structure diagram of current multiplexing low-power consumption radio-frequency transmitter of the present invention；
Fig. 2 is the circuit structure diagram of down coversion switching tube offset generating circuit in the specific embodiment of the invention；
Fig. 3 is the structural representation of transformer 101 in the specific embodiment of the invention；
Fig. 4 is that the turn ratio integrated on a kind of silicon chip of the present invention is 2：The structural representation of 6 transformer；
Fig. 5 is a kind of circuit structure diagram of another embodiment of current multiplexing low-power consumption radio-frequency transmitter of the present invention；
Fig. 6 is traditional single tube grid structure for amplifying altogether.
Embodiment
Below by way of specific instantiation and embodiments of the present invention are described with reference to the drawings, those skilled in the art can
Understand the further advantage and effect of the present invention easily by content disclosed in the present specification.The present invention can also pass through other differences
Instantiation implemented or applied, the various details in this specification also can be based on different viewpoints with application, without departing substantially from
Various modifications and change are carried out under the spirit of the present invention.
Fig. 1 is a kind of circuit structure diagram of current multiplexing low-power consumption radio-frequency transmitter of the present invention.It is as shown in figure 1, of the invention
A kind of current multiplexing low-power consumption radio-frequency transmitter, including：Transformer 101, common-gate input stage 102, common source amplifying circuit 103, altogether
Mode voltage stabilizing circuit 104, down coversion on-off circuit 105, trans-impedance amplifier 106 and down coversion switching tube offset generating circuit
401。
Wherein, transformer 101 is the transformer or the outer discrete transformer of piece integrated on silicon chip, for antenna to be received
The conversion of single-ended radio frequency signal or external differential signal through its primary-secondary be converted to differential signal and from the first differential voltage
Node P1 and the second differential voltage node P2 output difference signals；Common-gate input stage 102 includes the first NMOS tube M1, the 2nd NMOS
Pipe M2, the first coupled capacitor C1, the second coupled capacitor C2, the first biasing resistor R1 and the second biasing resistor R2, for by transformation
The differential signal that device 101 exports carries out capacitive cross coupling amplification and from the 3rd differential voltage node P3 and the 4th differential voltage section
Point P4 output difference amplified signals；Common source amplifying circuit 103 includes the 3rd PMOS M3, the 4th PMOS M4, the 3rd coupling electricity
Hold C3, the 4th coupled capacitor C4, the 3rd biasing resistor R3 and the 4th biasing resistor R4, for the difference for exporting transformer 101
Signal carries out extra mutual conductance amplification and poor from the 3rd differential voltage node P3 and the 4th in the case where not increasing current drain
Component voltage node P4 output difference amplified signals；Common-mode voltage stabilizing circuit 104, including the 5th PMOS M5, the 5th resistance R5,
6th resistance R6 and the first amplifier AMP1, for stablizing the 3rd differential voltage node P3 and the 4th differential electrical using negative-feedback principle
Press node P4 common-mode voltage；Down coversion on-off circuit 105, including the 6th NMOS tube M6, the 7th NMOS tube M7, the 8th NMOS tube
M8, the 9th NMOS tube M9, under local oscillation signal (LO+/LO-) control by common-gate input stage 102, common source amplifying circuit
The differential amplification signals of 103 outputs carry out down coversions (mixing) and obtain intermediate-freuqncy signal and from the 5th differential voltage node P5 and the 6th
Differential voltage node P6 output difference current intermediate frequency signals；Trans-impedance amplifier 106 includes intermediate frequency amplifier IFAMP1, the 7th resistance
R7 and the 8th resistance R8, the difference current intermediate frequency signal for down coversion on-off circuit 105 to be exported switch to voltage signal and put
Big output intermediate-freuqncy signal IF；Down coversion switching tube offset generating circuit 401, as shown in Fig. 2 including the 11st NMOS tube M41,
12 NMOS tube M42, the second amplifier AMP2, the 11st resistance R41, the 12nd resistance R42, the 13rd resistance R43, the 14th electricity
R44, the 11st coupled capacitor C41 and the 12nd coupled capacitor C42 are hindered, for the switch metal-oxide-semiconductor to down coversion on-off circuit 105
Produce DC offset voltage and phase locked loop PLL in future difference local oscillation signal are coupled to the switch of down coversion on-off circuit 105
The grid of metal-oxide-semiconductor.
Specifically, antenna is connected to one end of the primary coil of transformer 101, the primary coil of transformer 101 it is another
End ground connection, the in-phase end of the secondary coil of transformer 101 and the first coupled capacitor C1 one end, the first NMOS tube M1 source electrode,
3rd coupled capacitor C3 one end is connected to form the first differential voltage node P1, the end of oppisite phase of the secondary coil of transformer 101 with
Second coupled capacitor C2 one end, the second NMOS tube M2 source electrode, the 4th coupled capacitor C4 one end are connected to form the second difference
Voltage node P2, the centre tap ground connection of the secondary coil of transformer 101, the first coupled capacitor C1 other end are connected to second
One end of NMOS tube M2 grid and the second biasing resistor R2, the second coupled capacitor C2 other end are connected to the first NMOS tube M1
Grid and the first biasing resistor R1 one end, the first biasing resistor R1 other end and the second biasing resistor R2 other end connects
It is connected to the first bias voltage Vbn.
First NMOS tube M1 drain electrode and the 3rd PMOS M3 drain electrode, the 5th resistance R5 one end, the 8th NMOS tube M8
Source electrode, the 9th NMOS tube M9 source electrode be connected to form the 3rd differential voltage node P3, the second NMOS tube M2 drain electrode and the 4th
PMOS M4 drain electrode, the 6th resistance R6 one end, the 6th NMOS tube M6 source electrode, the 7th NMOS tube M7 source electrode are connected to form
4th differential voltage node P4, the 5th resistance R5 other end and the 6th resistance R6 other end are connected to the first amplifier AMP1's
In-phase input end, the 3rd coupled capacitor C3 one end and the 4th PMOS M4 grid and the 4th biasing resistor R4 one end phase
Even, the 4th coupled capacitor C4 one end is connected with the 3rd PMOS M3 grid and the 3rd biasing resistor R3 one end, and the 3rd is inclined
The other end of the other end and the 4th biasing resistor R4 of putting resistance R3 is connected to the second bias voltage Vbp, the 3rd PMOS M3's
Source electrode and the 4th PMOS M4 source electrode are connected to the 5th PMOS M5 drain electrode, and benchmark common-mode voltage Vcm is connected to the first fortune
AMP1 inverting input is put, the first amplifier AMP1 output end is connected to the 5th PMOS M5 grid, the 5th PMOS M5
Source electrode meet power vd D；
7th NMOS tube M7 drain electrode, the 9th NMOS tube M9 drain electrode and intermediate frequency amplifier IFAMP1 in-phase input end and
7th resistance R7 one end is connected to form the 5th differential voltage node P5, the 8th resistance R8, the 6th NMOS tube M6 drain electrode, the 8th
NMOS tube M8 drain electrode is connected to form the 6th differential voltage node P6 with intermediate frequency amplifier IFAMP1 inverting input, and intermediate frequency is put
Big device IFAMP1 reversed-phase output is connected with the 7th resistance R7 other end, intermediate frequency amplifier IFAMP1 in-phase output end and
The 8th resistance R8 other end is connected, and benchmark common-mode voltage Vcm is connected to intermediate frequency amplifier IFAMP1 common-mode voltage input；
Benchmark common-mode voltage Vcm is connected to the second amplifier AMP2 inverting input, and the second amplifier AMP2 output end connects
It is connected to the 11st NMOS tube M41 grid, the 11st NMOS tube M41 source ground, the 11st NMOS tube M41 drain electrode connection
To the 11st resistance R41 one end, the 11st resistance R41 other end is connected to the second amplifier AMP2 in-phase input end,
12 NMOS tube M42 source electrode, the 12nd NMOS tube M42 grid and drain electrode and the 12nd resistance R42 one end, the 13rd electricity
Resistance R43 one end, the 14th resistance R44 one end is connected to form the 3rd bias voltage Vlo, the 12nd resistance R42 other end
Meet power vd D, the 13rd resistance R43 other end and the 11st coupled capacitor C41 one end and the 6th NMOS tube M6 grid,
9th NMOS tube M9 grid is connected to form same phase local oscillation signal LO+, and the 14th resistance R44 other end couples electricity with the 12nd
Hold C42 one end and the 7th NMOS tube M7 grid, the 8th NMOS tube M8 grid is connected to form anti-phase local oscillation signal LO-, the
The 11 coupled capacitor C41 other end and the 12nd coupled capacitor C42 other end are connected to the difference local oscillator letter of phase-locked loop pll
Number output end.
The principle of the present invention is further illustrated below in conjunction with Fig. 1：
Radiofrequency signal is by antenna or is typically wire connected to RF input interfaces.RF input interfaces are connected to transformer 101
Primary coil, the secondary coil port P1/P2 direct currents of transformer 101 are connected to common-gate input stage 102.The part of common-gate input stage 102
Using capacitive cross coupled structure, while there is common grid and common source amplification characteristic.P1/P2 is connected to common source amplifying circuit simultaneously
103.Common source amplifying circuit 103 and common-gate input stage 102 are current multiplexing structure, i.e., do not consume extra DC current.Mutual conductance
Level output P3/P4 is connected to the switch metal-oxide-semiconductor of down coversion on-off circuit 105, switch metal-oxide-semiconductor grid connect local oscillation signal (LO+/
LO-), to realize mixer action, switch metal-oxide-semiconductor output end is connected to trans-impedance amplifier 106, is converted into intermediate frequency output voltage IF,
Realize the mixing function of receiver.
Radio-frequency antenna or wire cable are connected directly to the primary coil of transformer 101, it is not necessary to extra AC coupled
Electric capacity.Primary coil other end is connected to ground terminal GND.In general RF inputs can realize good impedance matching, no
Extra match circuit is needed again, but according to application demand, can also be concatenated RLC elements and be formed impedance matching circuit on plate.
Transformer both ends can also connect differential input signal, and the present invention is not limited.
In the specific embodiment of the invention, transformer 101 is 5 port devices, as shown in Figure 3.The connection of its port 1 and 2 is just
Level coil inductance, port 3 and 4 connect secondary inductance, and port 5 is secondary coil center tap terminal, is connected to ground terminal GND,
Electric pathway of the direct current to ground is provided for circuit.In addition, port 3 and 4 is respectively the in-phase end and end of oppisite phase of transformer, with respect to port
1 has identical mutual inductance factor M and opposite phase (180 ° of phase difference).Also mutual inductance between port 3 and port 4 be present, mutual inductance because
Sub- M '.Transformer and secondary coil can have a variety of different turn ratios (or number of turns ratio) 1：N, transformer master,
Secondary impedance changes square directly proportional, the i.e. Z of speed and turn ratio3,4And Z1,2Resistance between finger tip mouth 3,4 and port 1,2 respectively
It is anti-.Turn ratio is bigger, shows that the impedance transformation speed of transformer primary and secondary coil is bigger.
Because radio frequency mouth RF is usually 50 Ω normal impedances, to realize input resistant matching, in the primary coil of transformer
End needs to meet
Z1,2=50 Ω
The secondary coil of transformer also needs to meet impedance matching condition：
Wherein gM1,2For first the second NMOS tubes of NMOS tube M1/ M2 mutual conductance.It can be seen that transformer turn ratio is bigger, impedance turns
Change than higher, to realize the g of impedance matching needsM1,2Can be smaller.Due to transistor gmIt is directly proportional with the electric current of consumption, therefore work(
Consumption is minimized.
It is 2 that Fig. 4, which show the turn ratio integrated on a kind of silicon chip,：The structure of 6 transformer, it can also be improved to a variety of
Other turn ratios and other winding modes.
Transformer 101 can also use the outer discrete component type of attachment of piece of non-integration.During using discrete component form, first
Differential voltage node P1/ the second differential voltage nodes P2 be chip input difference to pin, while provide direct current to path
With differential signal input function.During using discrete component form, discrete transformer can use inductance coil, transmission line etc. a variety of
Version.Secondary coil is required for using the transformer integrated on silicon chip and the having in common that for transformer of discrete component
With centre cap port 5, to provide the path to ground.
102 common-gate input stage coupled for capacitive cross in Fig. 1.Cross coupling capacitor the first coupled capacitor the second couplings of C1/
Close electric capacity C2 and grid of the extra signal path to mutual conductance pipe the first NMOS tube the second NMOS tubes of M1/ M2 is provided, mutual conductance can be improved
The current utilization rate of pipe, 2 times of mutual conductance is provided under same current.First the second biasing resistors of biasing resistor R1/ R2 is connected to
First bias voltage Vbn ends, DC offset voltage is provided for mutual conductance pipe M1/M2.
Because effective mutual conductance doubles, mutual conductance pipe the first NMOS tube the second NMOS tubes of M1/ M2 thermal noise contribution reduces
Half.
Further, because the mutual inductance of transformer secondary coil port 3 and 4 acts on, the first NMOS tube of mutual conductance pipe M1/ the
Two NMOS tube M2 noise contribution can realize an extra counteracting path, for turn ratio 1：1 transformer, the contribution of mutual conductance pipe
Noise coefficient be about 0.2 γ, and common common grid input structure mutual conductance pipe noise contribution be γ, therefore in the same electric current of consumption
In the case of noise coefficient be reduced.
Due to no longer needing to use tail current source or tail inductance to carry out direct current biasing to common grid input pipe, simplify and designed
Journey, save chip area.The noise contribution of tail current source or tail inductance is eliminated simultaneously.
The relatively conventional common source input structure of common grid input structure that the present invention uses can provide the more preferable linearity.
In addition, to realize gain-adjusted function, thus it is possible to vary the size of mutual conductance pipe, or in the first differential voltage node
P1/ the second differential voltage node P2 end parallel connection attenuation networks.Gain-adjusted should keep port Impedance to match.
The part of common source amplifying circuit 103 is not on the premise of electric current is increased in Fig. 1, there is provided extra mutual conductance.Therefore always across
Lead for：
Gm,total=2 × gm1,2+gm3,4
The resistance R6 of the 5th resistance R5/ the 6th, the first amplifier AMP1, the 5th PMOS M5 are the stable electricity of common-mode voltage in Fig. 1
Road 104 is collectively forming common-mode feedback structure.Its object is to stablize the differential voltage node P4 of the 3rd differential voltage node P3/ the 4th
Common-mode voltage Vcm on the basis of point DC voltage.Because the part of trans-impedance amplifier 106 uses same benchmark common-mode voltage Vcm, because
The differential voltage node P4 of the 3rd differential voltage node P3/ of node the 4th and the 5th differential electrical before and after this down coversion on-off circuit 105
The differential voltage node P6 of pressure node P5/ the 6th and intermediate frequency amplifier have common DC potential Vcm, it is possible thereby to save brief biography
System method saves chip area, down coversion on-off circuit is opened because of the different capacitances connected of front stage DC potential
Pipe NMOS tube M6~M9 no longer consumed DC currents are closed, so as to reduce flicker noise (Flick noise).
It should be noted that down coversion on-off circuit 105 also can be extended to 8 metal-oxide-semiconductors and two groups of trans-impedance amplifiers, to form
Orthogonal mixer, there is provided the road difference outputs of I-Q (In-Phase-Quadrature) 4, as shown in Figure 5.By increasing by one group by orthogonal intrinsic signals
The extra switch pipe M10~M13 and trans-impedance amplifier of LOQ controls, obtain differing 90 ° of orthogonal output Q with in-phase end I roads phase
Road, it will not be described here.
The down coversion switching tube offset generating circuit 401 of down coversion on-off circuit 105 in Fig. 2, its object is to produce
One DC voltage Vlo changed with benchmark common-mode voltage Vcm.Its value is：
Vlo=Vcm+VGs42
I.e. Vlo clampers are in a fixed value Vgs4 higher than benchmark common-mode voltage Vcm (the 12nd NMOS tube M42 threshold value electricity
Pressure) place.So when common-mode voltage variation, the gate source voltage Vgs of switching tube can remain constant.On the one hand Fig. 1 is caused
In switching tube NMOS tube M6~M9 dc-couples be possibly realized, on the other hand ensure that switching tube NMOS tube M6~M9 work
State is constant.
It can be seen that a kind of current multiplexing low-power consumption radio-frequency transmitter of the present invention obtains while receiver consumption electric current is reduced
Low-noise factor and high sensitivity have been arrived, and has saved the area of chip.
The above-described embodiments merely illustrate the principles and effects of the present invention, not for the limitation present invention.Any
Art personnel can be modified above-described embodiment and changed under the spirit and scope without prejudice to the present invention.Therefore,
The scope of the present invention, should be as listed by claims.
Claims (10)
1. a kind of current multiplexing low-power consumption radio-frequency transmitter, including：
Transformer, for the conversion conversion of single-ended radio frequency signal or external differential signal through its primary-secondary for receiving antenna
For differential signal and from the first differential voltage node P1 and the second differential voltage node P2 output difference signals；
Common-gate input stage, capacitive cross coupling amplification is carried out and from the 3rd difference for the differential signal that exports the transformer
Voltage node P3 and the 4th differential voltage node P4 output difference amplified signals；
Common source amplifying circuit, for the differential signal that the transformer exports to be carried out into volume in the case where not increasing current drain
Outer mutual conductance amplification and from the 3rd differential voltage node P3 and the 4th differential voltage node P4 output difference amplified signals；
Common-mode voltage stabilizing circuit, for stablizing the 3rd differential voltage node P3 and the 4th differential electrical using negative-feedback principle
Press node P4 common-mode voltage；
Down coversion on-off circuit, for exporting the common-gate input stage, common source amplifying circuit under the control of local oscillation signal
Differential amplification signal carries out down coversion and obtains intermediate-freuqncy signal and from the 5th differential voltage node P5 and the 6th differential voltage node P6
Output difference current intermediate frequency signal；
Trans-impedance amplifier, the difference current intermediate frequency signal for the down coversion on-off circuit to be exported switch to voltage signal and put
Big output.
A kind of 2. current multiplexing low-power consumption radio-frequency transmitter as claimed in claim 1, it is characterised in that：The current multiplexing is low
Power consumption radio-frequency transmitter also includes down coversion switching tube offset generating circuit, for the switch to the down coversion on-off circuit
Metal-oxide-semiconductor produce DC offset voltage and phase locked loop PLL in future difference local oscillation signal are coupled to the down coversion on-off circuit
Switch metal-oxide-semiconductor grid.
A kind of 3. current multiplexing low-power consumption radio-frequency transmitter as claimed in claim 2, it is characterised in that：The common-gate input stage
Current multiplexing structure is used with the common source amplifying circuit.
A kind of 4. current multiplexing low-power consumption radio-frequency transmitter as claimed in claim 3, it is characterised in that：The common-gate input stage
Including the first NMOS tube, the second NMOS tube, the first coupled capacitor, the second coupled capacitor, the first biasing resistor and the second biased electrical
Resistance, the in-phase end of the secondary coil of the transformer are connected to form with one end of the first coupled capacitor, the source electrode of the first NMOS tube
One end of the first differential voltage node P1, the end of oppisite phase of the secondary coil of the transformer and second coupled capacitor,
The source electrode of second NMOS tube is connected to form the second differential voltage node P2, and the other end of first coupled capacitor is connected to
The grid of second NMOS tube and one end of the second biasing resistor, the other end of second coupled capacitor are connected to described
One end of the grid of one NMOS tube and first biasing resistor, the other end and the second biasing resistor of first biasing resistor
The other end be connected to the first bias voltage, first NMOS tube connects the 3rd differential voltage node P3, described second
The drain electrode of NMOS tube connects the 4th differential voltage node P4.
A kind of 5. current multiplexing low-power consumption radio-frequency transmitter as claimed in claim 4, it is characterised in that：The common source amplification electricity
Road includes the 3rd PMOS, the 4th PMOS, the 3rd coupled capacitor, the 4th coupled capacitor, the 3rd biasing resistor and the 4th biasing
Resistance, one end of the 3rd coupled capacitor connect the first differential voltage node P1, and described 4th coupled capacitor one end connects
Connect the second differential voltage node P2, the other end of the 3rd coupled capacitor and the grid and the 4th biasing resistor of the 4th PMOS
One end be connected, one end of the 4th coupled capacitor is connected with the grid of the 3rd PMOS and one end of the 3rd biasing resistor,
The other end of 3rd biasing resistor and the other end of the 4th biasing resistor are connected to the second bias voltage, the 3rd PMOS
The drain electrode of pipe connects the 3rd differential voltage node P3, and the drain electrode of the 4th PMOS connects the 4th differential voltage node
P4, the 3rd PMOS are connected the common-mode voltage stabilizing circuit with the source electrode of the 4th PMOS.
A kind of 6. current multiplexing low-power consumption radio-frequency transmitter as claimed in claim 5, it is characterised in that：The common-mode voltage is steady
Determining circuit includes the 5th PMOS, the 5th resistance, the 6th resistance and the first amplifier, the source electrode and the 4th of the 3rd PMOS
The source electrode of PMOS is connected to the drain electrode of the 5th PMOS, and benchmark common-mode voltage is connected to the anti-phase defeated of first amplifier
Enter end, the output end of first amplifier is connected to the grid of the 5th PMOS, the source electrode connection of the 5th PMOS
Supply voltage, one end of the 5th resistance connect the 3rd differential voltage node P3, the other end and the 6th resistance one end
The in-phase input end of first amplifier is connected to, the other end of the 6th resistance connects the 4th differential voltage node
P4。
A kind of 7. current multiplexing low-power consumption radio-frequency transmitter as claimed in claim 6, it is characterised in that：The down coversion switch
Circuit includes the 6th NMOS tube, the 7th NMOS tube, the 8th NMOS tube, the 9th NMOS tube, the source electrode of the 6th NMOS tube, the 7th
The source electrode of NMOS tube connects the 4th differential voltage node P4, source electrode, the source electrode of the 9th NMOS tube of the 8th NMOS tube
Connect the 3rd differential voltage node P3, the 6th NMOS tube, drain electrode and the trans-impedance amplifier phase of the 8th NMOS tube
Company forms the 6th differential voltage node P6, the 7th NMOS tube, drain electrode and the trans-impedance amplifier of the 9th NMOS tube
The 5th differential voltage node P5 is connected to form, the grid of the 7th NMOS tube, the grid phase downlink connection of the 8th NMOS tube are anti-phase
Local oscillation signal, the grid of the 6th NMOS tube, the grid phase downlink connection of the 9th NMOS tube are the same as phase local oscillation signal.
A kind of 8. current multiplexing low-power consumption radio-frequency transmitter as claimed in claim 7, it is characterised in that：The trans-impedance amplifier
Including intermediate frequency amplifier, the 7th resistance and the 8th resistance, the 7th NMOS tube drain electrode, the drain electrode of the 9th NMOS tube with it is described in
One end of the in-phase input end of audio amplifier and the 7th resistance is connected to form the 5th differential voltage node P5, and described
The drain electrode of six NMOS tubes, the drain electrode of the 8th NMOS tube are connected with the inverting input of the intermediate frequency amplifier and one end of the 8th resistance
Form the 6th differential voltage node P6, the other end phase of the reversed-phase output of the intermediate frequency amplifier and the 7th resistance
Even, the in-phase output end of the intermediate frequency amplifier is connected with the other end of the 8th resistance, the benchmark common-mode voltage connection
To the common-mode voltage input of the intermediate frequency amplifier, the 3rd differential voltage node P3, the 4th differential voltage node P4, the
Five differential voltage node P5, the 6th differential voltage node P6 and intermediate frequency amplifier output end IF are respectively provided with same benchmark common mode
Voltage.
A kind of 9. current multiplexing low-power consumption radio-frequency transmitter as claimed in claim 6, it is characterised in that：The down coversion switch
Circuit includes 8 switch metal-oxide-semiconductors, described to include two groups of trans-impedance amplifiers across group amplifier, to be formed just with 8 switch metal-oxide-semiconductors
Hand over frequency mixer, there is provided 4 road difference outputs of In-Phase-Quadrature.
A kind of 10. current multiplexing low-power consumption radio-frequency transmitter as claimed in claim 8, it is characterised in that：The down coversion is opened
Close pipe offset generating circuit include the 11st NMOS tube, the 12nd NMOS tube, the second amplifier, the 11st resistance, the 12nd resistance,
13rd resistance, the 14th resistance, the 11st coupled capacitor and the 12nd coupled capacitor, the benchmark common-mode voltage are connected to institute
The inverting input of the second amplifier is stated, the output end of second amplifier is connected to the grid of the 11st NMOS tube, described
The source ground of 11st NMOS tube, the drain electrode of the 11st NMOS tube is connected to one end of the 11st resistance, described
The other end of 11st resistance is connected to the in-phase input end of second amplifier, the source electrode of the 12nd NMOS tube, and the 12nd
The grid of NMOS tube and the group that is connected with one end, one end of the 13rd resistance, one end of the 14th resistance of the 12nd resistance that drains
Into the 3rd bias voltage, another termination supply voltage of the 12nd resistance, the other end of the 13rd resistance couples electricity with the 11st
The grid of one end of appearance and the 6th NMOS tube, the grid of the 9th NMOS tube are connected to form same phase local oscillation signal, the 14th resistance
The grid, the grid of the 8th NMOS tube of one end and the 7th NMOS tube of the other end and the 12nd coupled capacitor are connected to form anti-phase
Shake signal, and the other end of the 11st coupled capacitor and the other end of the 12nd coupled capacitor are connected to the difference local oscillator letter of phaselocked loop
Number output end.
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| CN201710963368.1A CN107645300B (en) | 2017-10-16 | 2017-10-16 | Current multiplexing low-power consumption radio frequency receiver |
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| CN201710963368.1A CN107645300B (en) | 2017-10-16 | 2017-10-16 | Current multiplexing low-power consumption radio frequency receiver |
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| CN107645300B CN107645300B (en) | 2020-04-10 |
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Cited By (11)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN109560816A (en) * | 2018-12-25 | 2019-04-02 | 哈尔滨理工大学 | A kind of improved operational amplification circuit suitable for 12 low-power consumption assembly line ADC |
| CN109818576A (en) * | 2019-01-30 | 2019-05-28 | 深圳旺凌科技有限公司上海分公司 | A kind of dynamic adjusting type low-power consumption Low Phase Noise Voltage-controlled Oscillator |
| CN110336538A (en) * | 2019-04-16 | 2019-10-15 | 电子科技大学 | A kind of CMOS capacity neutralization active mixer |
| CN110554389A (en) * | 2019-09-26 | 2019-12-10 | 中国电子科技集团公司第三十八研究所 | 77GHz radar receiver circuit for improving fluctuation of wide-temperature working gain |
| WO2019233217A1 (en) * | 2018-06-07 | 2019-12-12 | 清华大学深圳研究生院 | Reconfigurable, low-power consumption and low-cost receiver front-end supporting multi-band and multi-mode |
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| CN114268340A (en) * | 2022-01-26 | 2022-04-01 | 北京奕斯伟计算技术有限公司 | Transmitter, transceiver and signal transmission method thereof |
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| WO2023155070A1 (en) * | 2022-02-16 | 2023-08-24 | 中国科学技术大学 | Isolated power chip based on deadband control symmetrical class d oscillator |
Citations (10)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5157461A (en) * | 1990-06-14 | 1992-10-20 | Smiths Industries Aerospace & Defense Systems Inc. | Interface configuration for rate sensor apparatus |
| CN102082579A (en) * | 2010-12-31 | 2011-06-01 | 东南大学 | Ultralow-power consumption constant-envelope transceiver system and implementation method thereof |
| CN102158179A (en) * | 2011-03-18 | 2011-08-17 | 复旦大学 | Multimode low-noise amplifier adopting positive and negative feedback structure |
| CN102255621A (en) * | 2011-07-06 | 2011-11-23 | 清华大学 | Radio frequency front end circuit for software radio transceiver |
| CN102624228A (en) * | 2012-03-30 | 2012-08-01 | 江苏物联网研究发展中心 | Pulse width modulation (PWM) control direct current-direct current (DC-DC) converter |
| CN102868419A (en) * | 2011-07-05 | 2013-01-09 | 联发科技股份有限公司 | Transceiver and integrated circuit |
| CN103401508A (en) * | 2013-08-19 | 2013-11-20 | 东南大学 | Fusion structure of LNA (low noise amplifier) and frequency mixer |
| CN103490731A (en) * | 2013-10-16 | 2014-01-01 | 东南大学 | Low-noise passive frequency mixer |
| CN104158496A (en) * | 2014-08-15 | 2014-11-19 | 东南大学 | Passive frequency mixer at duty ratio of 25% with positive feedback transimpedance amplification stage as load |
| US20150107824A1 (en) * | 2013-03-15 | 2015-04-23 | Fastcap Systems Corporation | Power system for downhole toolstring |
-
2017
- 2017-10-16 CN CN201710963368.1A patent/CN107645300B/en active Active
Patent Citations (10)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5157461A (en) * | 1990-06-14 | 1992-10-20 | Smiths Industries Aerospace & Defense Systems Inc. | Interface configuration for rate sensor apparatus |
| CN102082579A (en) * | 2010-12-31 | 2011-06-01 | 东南大学 | Ultralow-power consumption constant-envelope transceiver system and implementation method thereof |
| CN102158179A (en) * | 2011-03-18 | 2011-08-17 | 复旦大学 | Multimode low-noise amplifier adopting positive and negative feedback structure |
| CN102868419A (en) * | 2011-07-05 | 2013-01-09 | 联发科技股份有限公司 | Transceiver and integrated circuit |
| CN102255621A (en) * | 2011-07-06 | 2011-11-23 | 清华大学 | Radio frequency front end circuit for software radio transceiver |
| CN102624228A (en) * | 2012-03-30 | 2012-08-01 | 江苏物联网研究发展中心 | Pulse width modulation (PWM) control direct current-direct current (DC-DC) converter |
| US20150107824A1 (en) * | 2013-03-15 | 2015-04-23 | Fastcap Systems Corporation | Power system for downhole toolstring |
| CN103401508A (en) * | 2013-08-19 | 2013-11-20 | 东南大学 | Fusion structure of LNA (low noise amplifier) and frequency mixer |
| CN103490731A (en) * | 2013-10-16 | 2014-01-01 | 东南大学 | Low-noise passive frequency mixer |
| CN104158496A (en) * | 2014-08-15 | 2014-11-19 | 东南大学 | Passive frequency mixer at duty ratio of 25% with positive feedback transimpedance amplification stage as load |
Cited By (16)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2019233217A1 (en) * | 2018-06-07 | 2019-12-12 | 清华大学深圳研究生院 | Reconfigurable, low-power consumption and low-cost receiver front-end supporting multi-band and multi-mode |
| CN109560816A (en) * | 2018-12-25 | 2019-04-02 | 哈尔滨理工大学 | A kind of improved operational amplification circuit suitable for 12 low-power consumption assembly line ADC |
| CN109560816B (en) * | 2018-12-25 | 2024-04-19 | 哈尔滨理工大学 | Improved operational amplifier circuit suitable for 12-bit low-power-consumption pipelined ADC |
| CN109818576A (en) * | 2019-01-30 | 2019-05-28 | 深圳旺凌科技有限公司上海分公司 | A kind of dynamic adjusting type low-power consumption Low Phase Noise Voltage-controlled Oscillator |
| CN110336538A (en) * | 2019-04-16 | 2019-10-15 | 电子科技大学 | A kind of CMOS capacity neutralization active mixer |
| CN110554389B (en) * | 2019-09-26 | 2024-03-15 | 中国电子科技集团公司第三十八研究所 | 77GHz radar receiver circuit for improving wide-temperature working gain fluctuation |
| CN110554389A (en) * | 2019-09-26 | 2019-12-10 | 中国电子科技集团公司第三十八研究所 | 77GHz radar receiver circuit for improving fluctuation of wide-temperature working gain |
| CN112367052A (en) * | 2020-10-15 | 2021-02-12 | 北京无线电测量研究所 | Millimeter wave down converter |
| CN113114131A (en) * | 2021-04-22 | 2021-07-13 | 浙江大学 | Current multiplexing radio frequency amplifier circuit |
| CN114268340A (en) * | 2022-01-26 | 2022-04-01 | 北京奕斯伟计算技术有限公司 | Transmitter, transceiver and signal transmission method thereof |
| US12057877B2 (en) | 2022-01-26 | 2024-08-06 | Beijing Eswin Computing Technology Co., Ltd. | Transmitter, transceiver and signal transmission method therefor |
| WO2023155070A1 (en) * | 2022-02-16 | 2023-08-24 | 中国科学技术大学 | Isolated power chip based on deadband control symmetrical class d oscillator |
| CN114826162A (en) * | 2022-05-18 | 2022-07-29 | 成都通量科技有限公司 | 5G millimeter wave dual-band dual-mode mixer and wireless communication terminal |
| CN114826162B (en) * | 2022-05-18 | 2023-11-10 | 成都通量科技有限公司 | 5G millimeter wave dual-band dual-mode mixer and wireless communication terminal |
| CN115378382B (en) * | 2022-10-27 | 2023-03-24 | 奉加微电子（昆山）有限公司 | Differential amplifier |
| CN115378382A (en) * | 2022-10-27 | 2022-11-22 | 奉加微电子（昆山）有限公司 | Differential amplifier |
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