CN107611174B - Gallium nitride-based semiconductor device and manufacturing method thereof - Google Patents
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Abstract
The invention provides a gallium nitride-based semiconductor device and a manufacturing method thereof, wherein the gallium nitride-based semiconductor device comprises a substrate, a buffer layer growing on the substrate, an unintentionally doped gallium nitride layer growing on the buffer layer, a channel layer growing on the unintentionally doped gallium nitride layer, a diffusion stop layer growing on the channel layer, and a P-type doped gallium nitride cap layer growing on the diffusion stop layer. The diffusion stopping layer is used for preventing the dopant in the P-type doped gallium nitride cap layer from moving to the channel layer, so that the concentration of the dopant in the P-type doped gallium nitride cap layer is ensured, and the effect of maintaining the enhanced characteristic of the gallium nitride-based semiconductor device is achieved.
Description
Technical Field
The invention relates to the technical field of semiconductors, in particular to a gallium nitride-based semiconductor device and a manufacturing method thereof.
Background
The existing power semiconductor market mainly comprises silicon power devices, and in the past 20 years, the power density of the silicon power devices is improved by 5-6 times every 10 years, but the power density of the silicon power devices is close to the theoretical limit, and the performance can be hardly improved.
Gallium nitride (GaN) semiconductors have a wide band gap (Eg ═ 3.4eV), excellent thermal stability, high breakdown voltage, high electron saturation drift velocity, and excellent radiation resistance compared to silicon or gallium arsenide. In addition, GaN power semiconductors have low temperature resistance characteristics as compared to silicon power semiconductors, and have advantages such as reduction of power conversion loss due to power semiconductors and minimization of power loss in power systems. GaN semiconductor devices are being miniaturized, converted at high voltage and high speed into new-generation power devices with low loss and high efficiency, and the demand for GaN semiconductors in the fields of industrial networks, power networks, information communication, and the like is expanding.
However, in order to realize enhancement (e-mode) in GaN power semiconductors, a P-type doped gallium nitride layer is required on a gate, and magnesium (Mg) is currently used as a main dopant. Since the P-type gallium nitride layer has crystal defects or is likely to cause charge transfer during heat treatment, magnesium in the P-type gallium nitride layer may move inside the crystal. When the composition of aluminum in the aluminum gallium nitride layer in contact with the P-type gallium nitride layer is less than 50%, the magnesium in the P-type gallium nitride layer easily moves to the aluminum gallium nitride layer, and in the field of GaN power semiconductors, the composition of aluminum in the aluminum gallium nitride layer is usually 20% to 30%. Therefore, in the field of GaN power semiconductors, magnesium is easily moved to the aluminum gallium nitride layer, thereby causing the enhancement characteristics of GaN-based semiconductor devices to be degraded or even fail.
Disclosure of Invention
In view of this, there is a need for providing a gallium nitride-based semiconductor device that can maintain the enhanced characteristics of the gallium nitride-based semiconductor device effectively.
The specific technical scheme is as follows:
a gallium nitride-based semiconductor device comprising:
a substrate;
a Buffer Layer (Buffer Layer) grown on the substrate;
an unintentionally doped gallium nitride (u-GaN Layer) Layer grown on the buffer Layer;
a channel Layer (u-GaN channel Layer) grown on the unintentionally doped gallium nitride Layer;
al grown on the channel layernGa(1-n)N is more than or equal to 0 and less than or equal to 1;
in the presence of AlnGa(1-n)A Diffusion Stop Layer (DSL) grown on the N Layer;
a P-type doped gallium nitride cap Layer (P-GaN Layer) grown on the diffusion stop Layer for preventing dopants in the P-type doped gallium nitride cap Layer from diffusing to the AlnGa(1-n)The N layers move.
The above-mentioned gallium nitride-based semiconductor device is obtained by forming Al on the above-mentioned AlnGa(1-n)The diffusion stopping layer is arranged between the N layer and the P-type doped gallium nitride cap layer and is used for preventing the dopant in the P-type doped gallium nitride cap layer from moving to the AlnGa1-nN layer, so that the concentration of the dopant in the P-type doped gallium nitride cap layer is ensured, and the effect of maintaining the enhanced characteristic of the gallium nitride-based semiconductor device is achieved.
In one embodiment, the diffusion stop layer is InaAlbGacBdN layer of the InaAlbGacBdIn the N layers, a + b + c + d is 1, a is more than or equal to 0 and less than or equal to 1, b is more than or equal to 0 and less than or equal to 1, c is more than or equal to 0 and less than or equal to 1, and 0<d≤1。
In one embodiment, the InaAlbGacBdThe N layer is doped with magnesium.
In one embodiment, a single layer or multiple layers of In are arranged between the unintentionally doped gallium nitride layer and the channel layerx’Aly’Gaz’N layer, Inx’Aly’Gaz’In the N layer, x '+ y' + z '═ 1, x' is not less than 0 and not more than 1, y 'is not less than 0 and not more than 1, and z' is not less than 0 and not more than 1.
In one embodiment, a single-layer or multi-layer In-doped layer is further disposed between the unintentionally doped gallium nitride layer and the channel layerxAlyGazN layer of the doped InxAlyGazIn the N layer, x + y + z is 1, x is more than or equal to 0 and less than or equal to 1, y is more than or equal to 0 and less than or equal to 1, and z is more than or equal to 0 and less than or equal to 1.
In one embodiment, the doped InxAlyGazThe dopant in the N layer is selected from one or more of carbon (C), silicon (Si), magnesium (Mg) and boron (B).
In one embodiment, the doped InxAlyGazThe N layer is carbon-doped InxAlyGazN layer (C-doped In)xAlyGazN Layer), the carbon is doped with InxAlyGazThe doping degree of carbon in the N layer is 1014～1020cm-3。
In one embodiment, the thickness of the diffusion stop layer is
In one embodiment, the buffer layer is an alternating stack of one or more of gallium nitride layers, aluminum nitride layers, and aluminum gallium nitride layers.
In one embodiment, the unintentionally doped gallium nitride Layer comprises a multi-Layer Strain Control Layer (Strain Control Layer) and a multi-Layer mask Layer (Masking Layer); the number of layers of the strain control layer is more than or equal to 0; the number of layers of the mask layer is more than or equal to 0.
Another object of the present invention is to provide a method for manufacturing the above gallium nitride-based semiconductor device, and the method is specifically realized by the following means.
The manufacturing method of the gallium nitride-based semiconductor device comprises the following steps:
providing a substrate;
growing a buffer layer on the substrate;
growing an unintentionally doped gallium nitride layer on the buffer layer;
growing a channel layer on the unintentionally doped gallium nitride layer;
growing Al on the channel layernGa(1-n)N is more than or equal to 0 and less than or equal to 1;
in the presence of AlnGa(1-n)Growing a diffusion stopping layer on the N layer;
and growing a P-type doped gallium nitride cap layer on the diffusion stopping layer.
In one embodiment, the diffusion stop layer is grown at a temperature of 600 ℃ to 1300 ℃, at a growth pressure of 0.1Torr to 750Torr, and at a thickness of 600 Torr to 1300 DEG C
The technical scheme has the following beneficial effects:
by adding Al tonGa(1-n)In is arranged between the N layer and the P-type doped gallium nitride cap layeraAlbGacBdN layer due to InaAlbGacBdThe N layer contains B with the atomic size smaller than that of magnesium, and can inhibit magnesium from moving from the P-type gallium nitride cap layer to the aluminum gallium nitride layer, so that the concentration of magnesium in the P-type gallium nitride cap layer is ensured, and the effect of maintaining the enhancement characteristic of the gallium nitride-based semiconductor device is achieved. At the same time, InaAlbGacBdThe enhancement characteristics of the gallium nitride-based semiconductor can be further improved by doping magnesium in the N layer.
Drawings
FIG. 1 is a schematic diagram of an embodiment of a GaN-based semiconductor device;
FIG. 2 is a partial schematic view of an exemplary gallium nitride-based semiconductor device showing a Diffusion Stop Layer (DSL);
FIG. 3 is a schematic view of another embodiment of a GaN-based semiconductor device;
FIG. 4 is a schematic view of an embodiment of a GaN-based semiconductor device with a diffusion stop layer being a GaBN layer;
fig. 5 is a schematic structural view of a gallium nitride-based semiconductor device according to yet another embodiment.
Detailed Description
To facilitate an understanding of the invention, the invention will now be described more fully with reference to the accompanying drawings. Preferred embodiments of the present invention are shown in the drawings. This invention may, however, be embodied in many different forms and should not be construed as limited to the embodiments set forth herein. Rather, these embodiments are provided so that this disclosure will be thorough and complete.
Unless defined otherwise, all technical and scientific terms used herein have the same meaning as commonly understood by one of ordinary skill in the art to which this invention belongs. The terminology used in the description of the invention herein is for the purpose of describing particular embodiments only and is not intended to be limiting of the invention. As used herein, the term "and/or" includes any and all combinations of one or more of the associated listed items.
As shown in fig. 1to 2, a gallium nitride-based semiconductor device includes:
a substrate 100;
a buffer layer 110 grown on the substrate 00;
an unintentionally doped gallium nitride layer 120 grown on the buffer layer 110;
a channel layer 130 grown on the unintentionally doped gallium nitride layer 120;
al grown on the channel layer 130nGa(1-n)N layers 140, wherein N is greater than or equal to 0 and less than or equal to 1;
in the presence of AlnGa(1-n)A diffusion stop layer 150 grown on the N layer 40;
a P-type doped GaN cap layer 160 grown on the diffusion stop layer 150, the diffusion stop layer 150 being used to prevent the dopant in the P-type doped GaN cap layer 160 from going to AlnGa(1-n) The N layer 140 moves.
The gallium nitride-based semiconductor device is formed by coating Al on the substratenGa(1-n)A diffusion stop layer 150 is disposed between the N layer 140 and the P-type GaN cap layer 160 for preventing dopants in the P-type GaN cap layer 160 from diffusing to AlnGa(1-n) The N layer 140 moves to ensure the concentration of the dopant in the P-type doped gallium nitride cap layer 160, thereby achieving the effect of maintaining the enhanced characteristics of the gallium nitride-based semiconductor device.
In one embodiment, the P-type doped gallium nitride cap Layer 160 is a magnesium (Mg) doped P-type gallium nitride cap Layer (Mg dope P-GaN Layer). It is understood that the dopant in the P-type doped gallium nitride cap layer 160 may be magnesium, but may also be other materials.
In one embodiment, the diffusion stop layer 150 is InaAlbGacBdN layer, InaAlbGacBdIn the N layers, a + b + c + d is 1, a is more than or equal to 0 and less than or equal to 1, b is more than or equal to 0 and less than or equal to 1, c is more than or equal to 0 and less than or equal to 1, and 0<d≤1。
InaAlbGacBdThe N layer contains B having an atomic size smaller than that of magnesium, and can inhibit magnesium from moving from the P-type gallium nitride cap layer 160 to the aluminum gallium nitride layer 140, thereby ensuring the concentration of magnesium in the P-type gallium nitride cap layer 160 and achieving the effect of maintaining the enhanced characteristics of the gallium nitride-based semiconductor device.
In one embodiment, In order to improve the enhanced characteristics of the gallium nitride-based semiconductoraAlbGacBdThe N layer is doped with magnesium.
Specifically, InaAlbGacBdThe doping concentration of magnesium in the N layer is 1017cm-3～1020cm-3。
In one embodiment, a single layer or multiple layers of In are disposed between the unintentionally doped gallium nitride layer 120 and the channel layer 130x’Aly’Gaz’N layer, Inx’Aly’Gaz’In the N layer, x '+ y' + z '═ 1, x' is not less than 0 and not more than 1, y 'is not less than 0 and not more than 1, and z' is not less than 0 and not more than 1. It is understood that when the channel layer 130 is a high quality channel layer of unintentionally doped gallium nitride, the channel layer 130 does not include In between the unintentionally doped gallium nitride layer 120 and the channel layer 130x’Aly’Gaz’And N layers. By growing a high quality channel layer of unintentionally doped gallium nitride, the gallium nitride based semiconductor device can have high mobility.
In one embodiment, a single-layer or multi-layer In-doped layer is disposed between the unintentionally doped gallium nitride layer 120 and the channel layer 130xAlyGazN layer doped with InxAlyGazIn the N layer, x + y + z is 1, x is more than or equal to 0 and less than or equal to 1, y is more than or equal to 0 and less than or equal to 1, and z is more than or equal to 0 and less than or equal to 1.
It can be understood that In is dopedxAlyGazThe N layer may be a layer or a layer doped with InxAlyGazThe N layer (where x + y + z is 1, 0. ltoreq. x.ltoreq.1, 0. ltoreq. y.ltoreq.1, 0. ltoreq. z.ltoreq.1) has another doped In of a different compositionx”Aly”Gaz”N layers (wherein x "+ y" + z "═ 1, x" ≦ 1, y "≦ 0 ≦ 1, and z" ≦ 0 ≦ 1) are stacked alternately with each other, and when the number of layers is 3 or more, the alternate stacking may be regular or irregular.
In one embodiment, In is dopedxAlyGazThe dopant in the N layer is selected from one or more of carbon, silicon, magnesium and boron.
In one embodiment, In is dopedxAlyGazThe N layer is carbon-doped InxAlyGazAnd N layers.
Further, carbon is doped with InxAlyGazThe doping degree of carbon in the N layer is 1014～1020cm-3。
In one embodiment, the thickness of the diffusion stop layer 150 is
In one embodiment, the buffer layer 110 is an alternating stack of one or more of low temperature grown gallium nitride layers, aluminum nitride layers, and aluminum gallium nitride layers. Specifically, the temperature of the low-temperature growth is 500-800 ℃.
In one embodiment, to improve the thickness and crystallinity of the unintentionally doped gallium nitride layer, the unintentionally doped gallium nitride layer 120 comprises a plurality of strain control layers and a plurality of mask layers; the number of layers of the strain control layer is more than or equal to 0; the number of layers of the mask layer is more than or equal to 0.
In one embodiment, the channel layer 130 and AlnGa(1-n)An aluminum nitride layer is also included between N layers 140.
An AlN layer is inserted between the AlnGa1-nN layer 140 and the u-GaN channel layer 130, and the AlN is binary alloy, so that the content of Al can be effectively reducednGa(1-n)The alloy introduced by the N layer 140 scatters randomly, but because AlN has a larger band gap width than GaN, it will increase AlnGa(1-n)Conduction band discontinuity between the N layer 140 and the u-GaN channel layer 130 improves AlnGa(1-n)A two-dimensional electron gas (2DEG) effect between the N layer 140 and the channel layer 130.
In one embodiment, the material of the substrate 100 is silicon (Si). It is understood that the material of the substrate 100 is not limited in this embodiment, and may be silicon carbide (SiC) or sapphire (Al)2O3) Or any other suitable substrate for epitaxially growing a buffer layer.
In one embodiment, an aluminum nitride seed layer is further included between the substrate 100 and the buffer layer 110.
Another embodiment of the present invention provides a method for manufacturing the above gallium nitride-based semiconductor device, which is specifically implemented by the following technical solutions.
The manufacturing method of the gallium nitride-based semiconductor device comprises the following steps:
providing a substrate;
growing a buffer layer on the substrate;
growing an unintended doped gallium nitride layer on the buffer layer;
growing a channel layer on the unintentionally doped gallium nitride layer;
growing Al on the channel layernGa(1-n)N is more than or equal to 0 and less than or equal to 1;
in AlnGa(1-n)Growing a diffusion stopping layer on the N layer;
and growing a P-type doped gallium nitride cap layer on the diffusion stopping layer.
Further, the growth temperature of the diffusion stop layer is 600 ℃ to 1300 ℃, the growth pressure is 0.1Torr to 750Torr, and the thickness is
The following are specific examples
Example 1
As shown in fig. 3, the gallium nitride-based semiconductor device includes:
the substrate 200, in this embodiment, the material of the substrate 200 is silicon.
A buffer layer 210 grown on the substrate 200.
It is understood that the buffer layer 210 is an alternating stack of one or more of low temperature grown gallium nitride layers, aluminum nitride layers, and aluminum gallium nitride layers. Wherein the temperature range of the low-temperature growth is 500-700 ℃, in order to reduce the high pressure generated by lattice mismatch in the initial stage of the low-temperature growth, the surrounding low-temperature growth layers are combined, so that the energy level of the low-temperature growth layer can be comprehensively reduced, and the quality of the growth layer (with high-temperature tendency) on the low-temperature growth layer is improved.
Further, an aluminum nitride seed layer 270 may be further included between the substrate 200 and the buffer layer 210.
An unintentionally doped gallium nitride layer 220(u-GaN) is grown on the buffer layer 210.
It is understood that in order to improve the thickness and crystallinity of the unintentionally doped gallium nitride layer, the unintentionally doped gallium nitride layer comprises a plurality of strain control layers and a plurality of mask layers; the number of layers of the strain control layer is more than or equal to 0; the number of layers of the mask layer is more than or equal to 0.
A channel layer 230(u-GaN channel layer) grown on the unintentionally doped gallium nitride layer 220.
It will be appreciated that In may also be included between the unintentionally doped gallium nitride layer 220 and the channel layer 230 In order to improve the mobility of the gallium nitride based semiconductor devicex’Aly’Gaz’N layer, Inx’Aly’Gaz’In the N layer, x '+ y' + z '═ 1, x' is more than or equal to 0 and less than or equal to 1, y 'is more than or equal to 0 and less than or equal to 1, and z' is more than or equal to 0 and less than or equal to 1; however, when the channel layer 230 is a high-quality channel layer with high mobility, no additional In is included between the unintentionally doped gallium nitride layer 220 and the high-quality channel layer 230x’Aly’Gaz’And N layers.
An AlGaN layer 240 is grown on the channel layer 230.
It can be understood that in order to improve the two-dimensional electron gas (2DEG) effect between the AlGaN layer 240 and the channel layer 230, an AlN layer may be inserted between the AlGaN layer 240 and the channel layer 230, and since AlN is a binary alloy, it may effectively reduce disordered scattering of the alloy introduced by the AlGaN layer, and at the same time, since the AlN bandgap width is greater than the GaN bandgap width, it may increase the conduction band discontinuity between the AlGaN layer and the GaN layer, thereby improving the 2DEG between the AlGaN layer 240 and the channel layer 230.
A diffusion stop layer 250 grown on the AlGaN layer 240, the diffusion stop layer 250 In this embodiment being a single layer of InaAlbGacBdAnd N layers, wherein a + b + c + d is 1, a is more than or equal to 0 and less than or equal to 1, b is more than or equal to 0 and less than or equal to 1, c is more than or equal to 0 and less than or equal to 1, and d is more than or equal to 0 and less than or equal to 1. It can be understood that In is used for improving the enhanced characteristics of the semiconductor deviceaAlbGacBdThe N layer may be doped with magnesium.
Specifically, In this exampleaAlbGacBdThe N layer is grown under the conditions that the growth temperature is 600-1300 ℃ and the growth pressure is 0.1-750 Torr; inaAlbGacBdThickness of N layer of
Further, as shown In FIG. 4, In this exampleaAlbGacBdThe N layer is a GaBN layer.
A P-type doped gallium nitride cap layer 260 grown on the diffusion stop layer 250.
Specifically, in the embodiment, the P-type doped gan cap layer 260 is a mg-doped P-type doped gan cap layer.
The gallium nitride-based semiconductor device of the present embodiment is formed by disposing a diffusion stop layer 250 (In) between the AlGaN layer 240 and the P-type doped gallium nitride cap layer 260aAlbGacBdN layer), InaAlbGacBdThe N layer contains B with the atomic size smaller than that of magnesium, and can inhibit magnesium from moving from the P-type gallium nitride cap layer 260 to the AlGaN layer 240, so that the concentration of magnesium in the P-type gallium nitride cap layer 260 is ensured, and the effect of maintaining the enhancement characteristic of the gallium nitride-based semiconductor device is achieved.
Example 2
As shown in fig. 5, the gallium nitride-based semiconductor device includes:
the substrate 400 is made of silicon in this embodiment.
A buffer layer 410 grown on the substrate.
It is understood that the buffer layer 410 is an alternating stack of one or more of low temperature grown gallium nitride layers, aluminum nitride layers, and aluminum gallium nitride layers.
Further, an aluminum nitride seed layer 470 may be further included between the substrate 400 and the buffer layer 410.
An unintentionally doped gallium nitride layer 420(u-GaN) is grown on the buffer layer 410.
It is appreciated that in order to improve the thickness and crystallinity of the unintentionally doped gallium nitride layer, the unintentionally doped gallium nitride layer 430 comprises a plurality of strain control layers and a plurality of mask layers; the number of layers of the strain control layer is more than or equal to 0; the number of layers of the mask layer is more than or equal to 0.
In-doped grown on the unintentionally doped gallium nitride layer 420xAlyGazN layer 480 doped with InxAlyGazIn the N layer, x + y + z is 1, x is more than or equal to 0 and less than or equal to 1, y is more than or equal to 0 and less than or equal to 1, and z is more than or equal to 0 and less than or equal to 1.
It can be understood that In is dopedxAlyGaz The N layer 480 may be a layer or may be doped with InxAlyGazN (x + y + z ≦ 1, x ≦ 1 equal to or greater than 0, y ≦ 1 equal to or greater than 0, z ≦ 1) layer with another doped In of different compositionx”Aly”Gaz”N (x "+ y" + z "═ 1, x" ≦ 1 of 0 ≦ y ", y" ≦ 1 of 0 ≦ z ", z" ≦ 1 of 0) layers, when the number of layers is 3 or more, the cross-stacking may be regular or irregular.
Specifically, In is doped In this embodimentxAlyGazN layer 480 is carbon doped InxAlyGazAnd N layers. It can be understood that In is dopedxAlyGazThe dopant in the N layer may be one or more of carbon, silicon, magnesium and boron.
Further, carbon is doped with InxAlyGazThe doping degree of carbon in the N layer is 1014～1020cm-3。
Further, carbon is doped with InxAlyGazThe N layer is grown at a growth temperature of 600 to 1300 ℃ and a growth pressure of 0.1to 750Torr, and has a thickness of
In doping with InxAlyGazA high quality channel layer 430 grown over the N layer 480. The high-quality channel layer 430 has high mobility.
An AlGaN layer 440 is grown on the channel layer 430.
It can be understood that in order to improve the two-dimensional electron gas (2DEG) effect between the AlGaN layer 440 and the channel layer 430, an AlN layer may be inserted between the AlGaN layer and the GaN layer, and since AlN is a binary alloy, it may effectively reduce disordered scattering of the alloy introduced by the AlGaN layer, and at the same time, since the AlN bandgap width is greater than the GaN bandgap width, it may increase conduction band discontinuity between the AlGaN layer and the GaN layer, thereby improving the 2DEG between the AlGaN layer 440 and the channel layer 430.
A diffusion stop layer 450(DSL) grown on the AlGaN layer 440, the diffusion stop layer 50 In this embodiment is a single layer of InaAlbGacBdAnd N layers.
Specifically, InaAlbGacBdThe N layer is grown under the conditions that the growth temperature is 600-1300 ℃ and the growth pressure is 0.1-750 Torr; inaAlbGacBdThickness of N layer of
A P-type doped gan cap layer 460 grown on the diffusion stop layer 450, wherein the P-type doped gan cap layer 460 in this embodiment is a mg-doped P-type doped gan cap layer.
In the gallium nitride-based semiconductor device, the diffusion stop layer 450 (In) is provided between the AlGaN layer 440 and the P-type doped gallium nitride cap layer 460aAlbGacBdN layer), InaAlbGacBdThe N layer contains B with the atomic size smaller than that of magnesium, and can inhibit magnesium from moving from the P-type gallium nitride cap layer 460 to the AlGaN layer 440, so that the concentration of magnesium in the P-type gallium nitride cap layer 460 is ensured, and the effect of maintaining the enhancement characteristic of the gallium nitride-based semiconductor device is achieved.
The technical features of the embodiments described above may be arbitrarily combined, and for the sake of brevity, all possible combinations of the technical features in the embodiments described above are not described, but should be considered as being within the scope of the present specification as long as there is no contradiction between the combinations of the technical features.
The above-mentioned embodiments only express several embodiments of the present invention, and the description thereof is more specific and detailed, but not construed as limiting the scope of the invention. It should be noted that, for a person skilled in the art, several variations and modifications can be made without departing from the inventive concept, which falls within the scope of the present invention. Therefore, the protection scope of the present patent shall be subject to the appended claims.
Claims (9)
1. A gallium nitride-based semiconductor device, comprising:
a substrate;
a buffer layer grown on the substrate;
an unintentionally doped gallium nitride layer grown on the buffer layer;
a channel layer grown on the unintentionally doped gallium nitride layer;
al grown on the channel layernGa(1-n)N is more than or equal to 0 and less than or equal to 1;
in the presence of AlnGa(1-n)A diffusion stop layer grown on the N layer; the diffusion stop layer is InaAlbGacBdN layer of the said InaAlbGacBdIn the N layers, a + b + c + d is 1, a is more than or equal to 0 and less than or equal to 1, b is more than or equal to 0 and less than or equal to 1, c is more than or equal to 0 and less than or equal to 1, and 0<d≤1；
And the diffusion stopping layer is used for preventing the dopant in the P-type doped gallium nitride cap layer from moving to the channel layer.
2. The gallium nitride-based semiconductor device according to claim 1, wherein the InaAlbGacBdThe N layer is doped with magnesium, the InaAlbGacBdThe doping concentration of magnesium in the N layer is 1017cm-3～1020cm-3。
3. The gallium nitride-based semiconductor device according to claim 1, wherein a single-layer or multi-layer In-doped layer is further disposed between the unintentionally doped gallium nitride layer and the channel layerxAlyGazN layer of the doped InxAlyGazIn the N layer, x + y + z is 1, x is more than or equal to 0 and less than or equal to 1, y is more than or equal to 0 and less than or equal to 1, and z is more than or equal to 0 and less than or equal to 1.
4. The gallium nitride-based semiconductor device according to claim 3, wherein the gallium nitride-based semiconductor device is characterized in thatSaid doped InxAlyGazThe dopant in the N layer is selected from one or more of carbon, silicon, magnesium and boron.
5. The gallium nitride-based semiconductor device according to claim 4, wherein the In-doped layer is formed by doping InxAlyGazThe N layer is carbon-doped InxAlyGazN layer of carbon doped with InxAlyGazThe doping degree of carbon in the N layer is 1014～1020cm-3。
6. The gallium nitride-based semiconductor device according to any one of claims 1to 5, wherein the buffer layer is one or more of a gallium nitride layer, an aluminum nitride layer and an aluminum gallium nitride layer.
7. The gallium nitride-based semiconductor device according to any one of claims 1to 5, wherein the unintentionally doped gallium nitride layer comprises a plurality of strain control layers and a plurality of mask layers; the number of layers of the strain control layer is more than or equal to 0; the number of layers of the mask layer is more than or equal to 0.
8. The method of fabricating a gallium nitride-based semiconductor device according to claim 1, comprising the steps of:
providing a substrate;
growing a buffer layer on the substrate;
growing an unintentionally doped gallium nitride layer on the buffer layer;
growing a channel layer on the unintentionally doped gallium nitride layer;
growing Al on the channel layernGa(1-n)N is more than or equal to 0 and less than or equal to 1;
in the presence of AlnGa(1-n)Growing a diffusion stopping layer on the N layer;
and growing a P-type doped gallium nitride cap layer on the diffusion stopping layer.
9. According to the claimsThe method of manufacturing a gallium nitride-based semiconductor device according to claim 8, wherein the growth temperature of the diffusion stopper layer is 600 ℃ to 1300 ℃, the growth pressure is 0.1Torr to 750Torr, and the thickness is
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| CN113782600B (en) * | 2021-08-27 | 2023-07-28 | 聚能晶源(青岛)半导体材料有限公司 | Enhancement type GaN-based HEMT device, device epitaxy and preparation method thereof |
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