CN107592889A - Method of the evaporation source of material with having evaporated material for depositing has been evaporated for depositing - Google Patents
Method of the evaporation source of material with having evaporated material for depositing has been evaporated for depositing Download PDFInfo
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- CN107592889A CN107592889A CN201680027463.4A CN201680027463A CN107592889A CN 107592889 A CN107592889 A CN 107592889A CN 201680027463 A CN201680027463 A CN 201680027463A CN 107592889 A CN107592889 A CN 107592889A
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- evaporation source
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Classifications
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/04—Coating on selected surface areas, e.g. using masks
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/04—Coating on selected surface areas, e.g. using masks
- C23C14/042—Coating on selected surface areas, e.g. using masks using masks
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
- C23C14/12—Organic material
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/24—Vacuum evaporation
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/24—Vacuum evaporation
- C23C14/243—Crucibles for source material
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02612—Formation types
- H01L21/02617—Deposition types
- H01L21/02631—Physical deposition at reduced pressure, e.g. MBE, sputtering, evaporation
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
- H10K71/10—Deposition of organic active material
- H10K71/16—Deposition of organic active material using physical vapour deposition [PVD], e.g. vacuum deposition or sputtering
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
- H10K71/10—Deposition of organic active material
- H10K71/16—Deposition of organic active material using physical vapour deposition [PVD], e.g. vacuum deposition or sputtering
- H10K71/164—Deposition of organic active material using physical vapour deposition [PVD], e.g. vacuum deposition or sputtering using vacuum deposition
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K50/00—Organic light-emitting devices
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- Condensed Matter Physics & Semiconductors (AREA)
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- Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physical Vapour Deposition (AREA)
- Electroluminescent Light Sources (AREA)
Abstract
Several embodiments as described herein are related to a kind of already vaporised source material to be deposited on to the evaporation source (20) on substrate.Evaporation source (20) includes:One or more distribution pipes (106), there are multiple nozzles (22), wherein each nozzle of the multiple nozzle (22) is configured for the plume towards substrate (10) guiding already vaporised source material;With masking device (30), including multiple holes (32), wherein at least one hole of the multiple hole (32) is configured to the plume (318) of the moulding already vaporised source material projected from single related nozzle.According to other aspects, describe a kind of masking device for evaporation source and several methods already vaporised source material being deposited on substrate.
Description
Technical field
Several embodiments of present disclosure, which are related to, is deposited on several materials on substrate, and is related to several to by number
Kind material is deposited on the equipment on substrate, and these materials are, for example, organic material.Several embodiments of present disclosure are special
Be be related to it is several the already vaporised source material of for example, organic material to be deposited on to the evaporation source on substrate.Other embodiment
It is related to several masking devices for evaporation source, and is related to the side that several materials by for example, organic material are deposited on substrate
Method.
Background technology
Organic evaporating device is the instrument for manufacturing Organic Light Emitting Diode (OLED).OLED is the special of light emitting diode
Form, luminescent layer include the film of some organic compounds in this light emitting diode.Organic Light Emitting Diode (OLED) is used
In manufacture TV screen, computer monitor, mobile phone and other hand-held devices to display information.OLED can also be used for typically
Space illumination.Color, brightness and the feasible region at visual angle of OLED display be more than conventional liquid crystal (LCD) color,
Brightness and the feasible region at visual angle, because OLED pixel is directly luminous and does not need backlight.Therefore, the energy consumption of OLED display
It is significantly fewer than traditional LCD energy consumption.Furthermore OLED can be made on flexible base board, this, which causes to have, further should
With.In general OLED display for example may include several layers of organic material layer, and several layers of organic material layer are located between two electrodes, this
A little organic material layers are all deposited on substrate in a manner of forming matrix display panel, and matrix display panel has independently
Can enable (energizable) pixel.OLED is normally located between two glass panels, and the edge quilt of glass panel
Sealing, OLED is packaged in wherein.
Display device as manufacture faces many challenges.OLED display or OLED illumination applications include several organic materials
The stacked structure of material, such as these organic materials are evaporated in vacuo.By shadow mask (shadowmask) with continuation method
Deposit these organic materials.For several stacked structures with high efficient production OLED, it is co-deposited (co-deposition)
Or coevaporation (co-evaporation) two or more material is favourable, this two or more material for example, forms mixed
The main body (host) and dopant of conjunction/doped layer.Furthermore, it is necessary to consider several works for evaporating very sensitive organic material
Skill condition.
In order to which material is deposited on substrate, untill material is heated to material evaporation.Distribution pipe will have been steamed by nozzle
Hair material is directed to substrate.In recent years, the accuracy of depositing operation has improved, such as in order to provide less and less picture
Plain size.In some techniques, mask is used for evaporating materials through mask opening time limit fixation element.However, the screening of mask
Cover effect (shadowing effect), evaporate the diffusion of material and analogue makes it difficult to further improve evaporator man
The accuracy and predictability of skill.
In view of described above, the evaporation technology for manufacturing the device with high-quality and accuracy improve accuracy and
Predictability is favourable.
The content of the invention
In view of described above, there is provided several evaporation sources, several masking devices for evaporation source and several to by
Evaporation source material is deposited on the method on substrate.
According to the one side of present disclosure, there is provided a kind of already vaporised source material to be deposited on to the evaporation on substrate
Source.The evaporation source includes:One or more distribution pipes, the distribution pipe have multiple nozzles, wherein the multiple nozzle is each
Nozzle is configured for the plume towards the substrate-guided already vaporised source material;And masking device, the masking device bag
Multiple holes are included, wherein at least one hole in the multiple hole is configured to the moulding already vaporised source projected from single related nozzle
The plume of material.
In some embodiments, each hole in the multiple hole is configured to individually moulding from the multiple nozzle
The plume of already vaporised source material that projects of single related nozzle.
According to other aspects of present disclosure, there is provided a kind of masking device for evaporation source, evaporation source is to by
Evaporation source material is deposited on substrate.The masking device includes the shielding cell of multiple separation, wherein the screening of the multiple separation
Covering each shielding cell of unit includes one or more holes, and one or more described holes are respectively configured to be led to by what perisporium surrounded
Road, wherein each hole in one or more holes is configured to the individually moulding single related nozzle injection from evaporation source
The plume of already vaporised source material.
According to other aspects of present disclosure, there is provided a kind of being deposited on already vaporised source material in vacuum chamber
Method on substrate.The method includes:Already vaporised source material is guided by multiple nozzles of evaporation source, wherein the multiple nozzle
Each nozzle produce towards substrate transmission already vaporised source material plume;With it is individually moulding by multiple holes of masking device
The plume of these already vaporised source materials.
Other aspect, advantage and features of present disclosure are become apparent from by specification and accompanying drawing.
Brief description of the drawings
Then the mode of the features described above of present disclosure can be understood in detail, can have by reference to several embodiments
There is disclosure more particular description (brief summary is as above).Accompanying drawing is related to several embodiments of present disclosure and is illustrated in
Under:
Fig. 1 illustrates the top schematic view of the depositing device including evaporation source according to embodiment described herein;
Fig. 2A, Fig. 2 B and Fig. 2 C illustrate the schematic diagram of several parts of the evaporation source according to embodiment described herein;
Fig. 3 illustrates the diagrammatic top view of the evaporation source according to embodiment described herein;
Fig. 4 illustrates the diagrammatic top view of the evaporation source with three distribution pipes according to embodiment described herein;
Fig. 5 illustrates the constructed profile of the evaporation source according to embodiment described herein;
Fig. 6 is the perspective view according to the masking device of embodiment described herein;
Fig. 7 is the perspective view according to the masking device of embodiment described herein;
Fig. 8 A and Fig. 8 B are two during the depositing device with evaporation source is operated according to embodiment described herein
The schematic diagram in individual stage of continuing;And
Fig. 9 is to the flow for the method being deposited on already vaporised source material on substrate according to embodiment described herein
Figure.
Embodiment
The various embodiments of present disclosure are reference will now be made in detail to now, and one or more examples of these embodiments illustrate
In each figure.In the following description of each figure, identical Ref. No. refers to identical part.In general, only description is relative
In the difference of each embodiment.Each example is provided by way of explanation, but it is not intended that as to present disclosure
Limitation.Illustrate or describe and as an embodiment part feature can be used for other embodiment or with other implementation
Mode combines, to obtain still other embodiment.This means that this specification includes these modifications and change.
As used herein such, term " source material " can be regarded as being evaporated and being deposited on the material on the surface of substrate
Material.For example, in several embodiments as described herein, the evaporating organic materials being deposited on the surface of substrate can be
Source material.The unrestricted example of organic material includes one of the following or more:ITO、NPD、Alq3, quinacridone
(Quinacridone), sudden and violent (starburst) material of Mg/AG, star, and the like.
As used herein such, term " evaporation source " can be regarded as providing the already vaporised source that will be deposited on substrate
The configuration of material.Particularly, evaporation source is configurable to the already vaporised source material that will be deposited on substrate of guiding and enters vacuum
In deposition region in chamber, vacuum chamber is, for example, the vacuum deposition chamber of depositing device.Multiple sprays of evaporation source can be passed through
Mouth is towards substrate guided already vaporised source material.Nozzle can have jet expansion respectively, can guide nozzle outlet towards deposition region,
Especially towards by substrate to be coated.
Evaporation source may include:Evaporator or crucible, evaporator or crucible evaporation will be deposited on the source material on substrate;With
Distribution pipe, distribution pipe are fluidly connected to crucible, and are configured to already vaporised source material being sent to the multiple nozzle, to
Already vaporised source material is injected in deposition region.
In some embodiments, evaporation source includes two or more distribution pipe, wherein each distribution pipe have it is single
Nozzle.In some embodiments, evaporation source includes two or more distribution pipe, wherein each distribution pipe includes multiple sprays
Mouth.In some embodiments, distribution pipe includes two or more nozzle, particularly ten or more individual nozzle.
In some embodiments, evaporation source includes two or more distribution pipe disposed adjacent one another, wherein this two or more
Each distribution pipe of distribution pipe includes ten or more nozzles.
As used herein such, term " crucible " can be regarded as providing or including the dress for the source material that will be deposited
Put or storage.In general, crucible can be heated, to evaporate the source material that will be deposited on substrate.According to this paper's
Several embodiments, crucible can be fluidly connected to distribution pipe, and already vaporised source material can be transferred into distribution pipe.
As used herein such, term " distribution pipe " can be regarded as guiding and distribute already vaporised source material
Pipe.Particularly, distribution pipe can be directed to the already vaporised source material from crucible at multiple nozzles in distribution pipe.As made herein
As, term " multiple nozzles " generally comprises at least two or more nozzle, and each nozzle includes jet expansion, nozzle
Export to project already vaporised source material towards substrate along the main direction of the launch.According to several embodiments as described herein, divide
Pipe arrangement can be the straight line distribution pipe especially along first (particularly longitudinal direction) direction extension, prolong especially along vertical direction
Stretch.In some embodiments, distribution pipe may include the pipe with cylinder body shape.Cylinder can have circular bottom shape or appoint
The bottom shape that what he is adapted to.Several examples of distribution pipe will be described in more detail in down.In some embodiments, steam
Rising may include two or three distribution pipes.In some embodiments, each distribution pipe is fluidly connected to crucible so that different
Material can be deposited on substrate.
Fig. 1 illustrates the diagrammatic top view of the depositing device 100 with evaporation source 20 according to embodiment described herein.It is heavy
Product equipment 100 includes vacuum chamber 110, and evaporation source 20 is located in vacuum chamber 110.According to can be with other embodiment party described herein
Some embodiments that formula combines, evaporation source 20 are configured for moving along by the surface translation of substrate to be coated.
Furthermore evaporation source 20 is configurable to be used to rotate around rotary shaft.
According to several embodiments, evaporation source 20 can have one or more evaporation crucibles and one or more distribution pipes.Citing
For, evaporation source 20 as shown in Figure 1 includes two evaporation crucibles 104 and two distribution pipes 106.As shown in fig. 1, true
Substrate 10 and other substrates 11 are provided in plenum chamber 110, to receive already vaporised source material.
According to this paper some embodiments, to cover the mask assembly of substrate may be placed at substrate and evaporation source it
Between.Mask assembly may include mask and mask frame, and mask frame is mask is held in precalculated position.In this paper number
In individual embodiment, one or more extra tracks can be set, to support and move mask assembly.For example, institute in Fig. 1
The embodiment shown has the first mask 133 and the second mask 134, and the first mask 133 is supported by the first mask frame 131, the
Two masks 134 are supported by the second mask frame 132, and the first mask frame 131 is arranged between evaporation source 20 and substrate 10, and second
Mask frame 132 is arranged between evaporation source 20 and other substrates 11.Substrate 10 and other substrates 11 can be in vacuum chambers 110
It is supported on respective transmission track (not being illustrated in Fig. 1).
Fig. 1 also shows masking device 30, there is provided masking device 30 to guide already vaporised source material respectively from distribution pipe 106
It will be described in further detail below to substrate 10 and/or to other substrates 11, this part.Masking device can be set from nozzle downstream
30, that is, masking device 30 is between distribution pipe and substrate.In some embodiments, masking device 30 can for example through
Screw is detachably secured at least one distribution pipe.
In this paper several embodiments, if mask is used to be deposited on material in such as OLED manufacture systems
On substrate, then mask can be pixel mask, and there is 50 μm of x of about 50 μm of size or the pixel even below the size to open
Mouthful, the pixel openings such as with about 30 μm or less or the size (such as minimum dimension of section) of about 20 μm of section.
In one example, pixel mask can have about 40 μm of thickness.The size of thickness and pixel openings in view of mask, masking effect
Should may be in the mask pixel openings wall masking pixel openings position occur.Herein described masking device 30 can limit
Already vaporised source material reduces shadowing effect in the maximum angle of impingement on mask and on substrate.
According to several embodiments as described herein, the material of masking device 30 is applicable to have about 100 DEG C to about 600
DEG C temperature already vaporised source material.In some embodiments, masking device may include with leading more than 21W/ (mK)
Hot material and/or to for example evaporating organic materials are chemically inert material.According to some embodiments, masking device
It may include that Cu, Ta, Ti, Nb, class bore at least one of coating (DLC) and graphite, or may include with the material referred at least
A kind of coating.
According to several embodiments as described herein, substrate can be applied source material in substantially vertical position.One
As for, distribution pipe 106 is configured to the line source (linesource) substantially vertically extended.Can be with other realities described herein
In several embodiments as described herein that the mode of applying combines, term is " vertical " to be particularly interpreted as fair when meaning substrate orientation
Perhaps there are 20 ° or deviation less than 20 °, such as 10 ° or the deviation less than 10 ° away from vertical direction.For example, because with away from vertical
The substrate support of some deviations directly oriented may cause more stable substrate position, so can allow this deviation.However,
During the deposition of source material, substantially vertical substrate orientation is considered as being different from horizontal substrate orientation.The surface of substrate by
The line source that extends in one direction and it is coated with along the translational motion in another direction, one direction corresponds to a base
Board size dimension (dimension), another described direction correspond to another substrate size dimension.
In some embodiments, evaporation source 20 may be disposed in the vacuum chamber 110 of depositing device 100, and be located at
E.g. on the track or straight line guiding element 120 of annular orbit (not being illustrated in accompanying drawing).Track or straight line guiding element 120 are configured to
Translational motion for evaporation source 20.According to the different embodiments that can be combined with other embodiment described herein, for putting down
The driver of shifting movement may be disposed in evaporation source 20, positioned at track or straight line guiding element 120, in vacuum chamber 110 or these
The combination of configuration.Therefore, evaporation source can move during deposition along by the surface of substrate to be coated, especially along straight
Thread path moves.The uniformity of deposition materials on substrate can be improved.
Fig. 1 also depicts valve 105, such as gate valve.Valve 105 allows to the true of adjoining vacuum chambers (not being illustrated in Fig. 1)
Sky sealing.According to several embodiments as described herein, valve 105 can in order to transmit substrate or mask enter vacuum chamber 110 and/
Or leave vacuum chamber 110 and open.
According to some embodiments that can be combined with other embodiment described herein, such as maintain vacuum chamber 111 it
Other vacuum chambers of class are set adjacent to vacuum chamber 110.Vacuum chamber 110 and maintenance vacuum chamber 111 can be connected by valve 109
Connect.The vacuum sealing that valve 109 is configured for opening and closes vacuum chamber 110 between maintenance vacuum chamber 111.According to
Several embodiments as described herein, when valve 109 is in opening, evaporation source 20 can be transferred into maintenance vacuum chamber
111.Hereafter, valve can close, to provide vacuum chamber 110 and maintain the vacuum sealing between vacuum chamber 111.If valve 109
Close, maintenance vacuum chamber 111 can divulge information and open, for the maintenance of evaporation source 20, without destroying in vacuum chamber 110
Vacuum.
Depositing device can be used for various applications, including the application for the OLED device manufacture including several process method,
Wherein two or more source materials evaporate simultaneously, and this two or more source materials are, for example, two or more organic materials.In Fig. 1
Shown in example in, two or more distribution pipes 106 and corresponding evaporation crucible are disposed adjacent to each other.For example, one
In a little embodiments, three distribution pipes can be disposed adjacent to each other.Each distribution pipe includes multiple nozzles, and these nozzles have respective
Jet expansion, the already vaporised source material from the inside of respective distribution pipe is directed to the deposition region of vacuum chamber
In.Nozzle can be arranged to for example mutually equidistant along the linear extension direction of respective distribution pipe.Each distribution pipe may be configured to
For different already vaporised source materials to be directed in the deposition region of vacuum chamber.
Although the embodiment shown in Fig. 1 provides the depositing device 100 with moveable evaporation source 20, ability
Field technique personnel it will be appreciated that above-mentioned embodiment be equally applicable for that substrate moves in depositing system during processing it is heavy
Product system.For example, along static material deposition configuration guiding and can drive substrate to be coated.
Several embodiments as described herein more particularly to for example for carrying out OLED display on large area substrates
The deposition of the organic material of manufacture.According to some embodiments, the carrier or large-area substrates for supporting one or more substrates can have
There is at least 0.174m2Size.For example, depositing system is applicable to handle large-area substrates, such as the 5th generation, the 7.5th
Generation, the 8.5th generation or even the substrate in the 10th generation, the substrate in the 5th generation correspond to about 1.4m2Substrate (1.1m x 1.3m),
The substrate in the 7.5th generation corresponds to about 4.29m2Substrate (1.95m x 2.2m), the substrate in the 8.5th generation correspond to about 5.7m2Base
Plate (2.2m x 2.5m), the substrate in the 10th generation correspond to about 8.7m2Substrate (2.85m × 3.05m).Can be in a similar way
Implementation or even e.g. more Gao Dai and the corresponding substrate area in the 11st generation and the 12nd generation.
According to the several embodiments that can be combined with other embodiment described herein, substrate thickness can be from 0.1 to
1.8mm, and it is applicable to such substrate thickness for the holding configuration of substrate.Substrate thickness can be about 0.9mm or be less than
0.9mm, e.g. 0.5mm or 0.3mm, and keep configuration to be applied to such substrate thickness.In general, substrate can be by
Any material for being suitable for material deposition is made.For example, substrate can be made up of the material selected from following group, this group
Group by glass (such as soda-lime glass (soda-lime glass), Pyrex (borosilicate glass) etc.), metal,
The combination of polymer, ceramics, composite, carbon fibre material or any other material or the material that can be coated with by depositing operation
Formed.
According to some embodiments that can be combined with other embodiment described herein, depositing device 100 can be wrapped further
Material collector unit 40 is included, material collector unit 40 is configurable to containment wall.When evaporation source is in rotation position, particularly
During evaporation source 20 rotates around rotary shaft, material collector unit 40 can be arranged to collection from evaporation source and/or from masking
The already vaporised source material that device 30 projects.
In some embodiments, it is possible to provide heater 50 is for cleaning in the maintenance position of depositing device 100
Masking device.Maintenance position can be a kind of position of depositing device, and compared to the deposition position of depositing device, evaporation source exists
Rotation position is in this maintenance position, the nozzle of evaporation source is directed to direction in the deposition position of depositing device and will applied
The substrate of cloth.
Fig. 2A to Fig. 2 C illustrates several parts of the evaporation source 20 according to embodiment described herein.As shown in Figure 2 A,
Evaporation source 20 may include distribution pipe 106 and evaporation crucible 104.For example, distribution pipe can have stretching for heating unit 225
Long cube.Evaporation crucible can be storage, for the source material that will be evaporated using heating unit 225, source material example
Organic material in this way.
According to the several embodiments that can be combined with other embodiment described herein, multiple nozzles 22 can be along evaporation source
20 length direction arrangement.Particularly, the multiple nozzle can be arranged along the length direction of distribution pipe.
According to some embodiments that can be combined with other embodiment described herein, distribution pipe 106 is in the longitudinal direction
Substantially perpendicularly extend.For example, the length of distribution pipe 106 at least corresponds to will be deposited in depositing device
The height of substrate.In many cases, the height of the substrate than that will be deposited is grown at least 10% by the length of distribution pipe 106
Or even 20%, and give and uniformly deposited at the upper end of substrate and/or the lower end of substrate.
According to some embodiments that can be combined with other embodiment described herein, the length of distribution pipe can be 1.3m or
More than 1.3m, such as 2.5m or more than 2.5m.Constructed according to one kind, as shown in Figure 2 A, evaporation crucible 104 is arranged at distribution pipe
106 lower end.In general, source material evaporates in evaporation crucible 104.Already vaporised source material enters in the bottom of distribution pipe 106
Enter, and substantially by side direction guide by this multiple outlet in distribution pipe and for example towards the base that is substantially vertically oriented
Plate.
According to some embodiments that can be combined with other embodiment described herein, this multiple nozzle is arranged such that
Jet expansion limits the main direction of the launch X of substantial horizontal (+/- 20 °).According to some particular implementations, main direction of the launch X
It can be oriented slightly upwards for example in from level to upward 15 ° of scope, it is e.g. upward 3 ° to 7 °.Similarly, substrate can
Slightly tilt to substantially perpendicular to evaporation direction, and particle generation can be reduced.For illustrative purposes, evaporation crucible 104
And distribution pipe 106 is illustrated in Fig. 2A without hot veil.Heating unit 215 and heating unit 225 are found in Fig. 2 B
Perspective illustration in.
Fig. 2 B illustrate the enlarged diagram of a part for evaporation source, are particularly connected to the distribution pipe 106 of evaporation crucible 104
Enlarged diagram.Flange unit 203 is provided, flange unit 203 be configured to provide evaporation crucible 104 and distribution pipe 106 it
Between connection.For example, evaporation crucible and distribution pipe are configured to separative element, can separate and connect at flange unit
Or these separative elements are assembled, such as the operation for evaporation source.
Distribution pipe 106 has inner hollow space 210.Heating unit 215 is provided to heat distribution pipe.Distribution pipe 106 can
It is heated to so that the already vaporised source material provided by evaporation crucible 104 will not be in the temperature of the internal condensate of the wall of distribution pipe 106
Degree.Around the pipe of distribution pipe 106, the hot veil 217 of two or more is set.Hot veil is configured to reflect single by heating
The heat energy that member 215 provides returns towards inner hollow space 210.Namely provided to heat the energy of distribution pipe 106 to adding
The energy of hot cell 215 can be reduced, because hot veil 217 reduces heat loss.It is sent to other distribution pipes and/or to covering
The heat of mould or substrate can be reduced.According to some embodiments that can be combined with other embodiment described herein, heat masking
Thing 217 may include the hot shielding layer of two or more, such as five layers or more the hot shielding layer of layer, e.g. ten layers of hot shielding layer.
In general, as shown in Figure 2 B, hot veil 217 includes opening, these nozzles in distribution pipe 106 that are open
Position.The enlarged drawing for the evaporation source being illustrated in Fig. 2 B shows four nozzles (being schematically depicted as exporting).These nozzles
It can be set along the length direction of distribution pipe 106.As described herein, distribution pipe 106 can be arranged to straight line distribution pipe, such as have
There are multiple nozzles.For example, distribution pipe can have the nozzle more than 30, such as 40,50 or 54 nozzles, these nozzle edges
The length direction arrangement of distribution pipe.According to several embodiments as described herein, these nozzles can be spaced apart from each other.Citing comes
Say, these nozzles can be spaced apart 1cm or more distance, such as be spaced apart the distance from 1cm to 3cm, such as be spaced apart 2cm's
Distance.
During operation, distribution pipe 106 is connected to evaporation crucible 104 at flange unit 203.Evaporation crucible 104 is by structure
Cause the accommodating source material that will be evaporated and evaporate the source material.Fig. 2 B are drawn through the section of the housing of evaporation crucible 104
Figure.Such as evaporation crucible top set filling opening, can be used plug (plug) 222, lid (lid), covering (cover) or
Analog closes filling opening, for closing the shell of evaporation crucible 104.
Additional hot cell 225 is arranged in the shell of evaporation crucible 104.Additional hot cell 225 can be at least along evaporation
A part of wall extension of crucible 104., can be extraly according to some embodiments that can be combined with other embodiment described herein
Or one or more central heating elements are selectively set.Fig. 2 B illustrate two central heating elements 226,228.First center
Heating element heater 226 and second central heating element 228 can include the first conductor 229 and the second conductor 230 respectively, for providing
Electrical power is to central heating element 226,228.
In order to improve the efficiency of heating surface of the source material in evaporation crucible, evaporation crucible 104 can further comprise hot veil
227.Hot veil 227 is configured to reflect the shell that the heat energy provided by additional hot cell 225 returns to evaporation crucible 104
In, and provided if there is central heating element 226,228 heat energy when, hot veil 227 is configured to reflect in
The heat energy that centre heating element heater 226,228 is provided is returned in the shell of evaporation crucible 104.
According to some embodiments, hot veil can be provided for evaporation source, hot veil be, for example, hot veil 217 and
Hot veil 227.Hot veil can reduce the energy loss from evaporation source, also reduce what evaporation source evaporation source material was lost
Integral energy.For other aspects, especially for depositing organic material, the heat radiation from evaporation source (particularly exists
Towards the heat radiation of mask and substrate during deposition) it can be reduced.Have especially for being deposited on the substrate of masked
Machine material, and even more for for display manufacturing, the temperature of substrate and mask needs to be accurately controlled.From evaporation
The heat radiation in source can be reduced or avoided by hot veil, and hot veil is, for example, hot veil 217 and hot veil 227.
These veils may include several shielding layers, to reduce heat radiation to the outside of evaporation source 20.Alternatively
For, hot veil may include several layers of shielding layer, and for these shielding layers by fluid active cooling, this fluid is, for example, air, nitrogen, water
Or other suitable cooling fluids.According to still other embodiment as described herein, one or more described hot veils can wrap
Sheet metal is included, around the various pieces of evaporation source, such as around distribution pipe 106 and/or evaporation crucible 104.According to described herein
Several embodiments, sheet metal can have 0.1mm to 3mm thickness, may be selected from by ferrous metal (ferrous metals,
SS) and at least one material of group for being formed of nonferrous metal (Cu, Ti, Al), and/or example can be spaced relative to each other
Such as 0.1mm or more gap.
Such as illustrate according to some embodiments as described herein and on the exemplary of Fig. 2A and Fig. 2 B, evaporation crucible
104 are arranged at the downside of distribution pipe 106.According to the still other embodiment that can be combined with other embodiment described herein,
Steam lead 242 may be disposed between the central portion of distribution pipe 106 or the lower end for being arranged on distribution pipe and the upper end of distribution pipe
Another location.
Fig. 2 C illustrate the example of the evaporation source 20 with distribution pipe 106 and steam lead 242, and steam lead 242 is arranged at
The central portion of distribution pipe.The already vaporised source material resulted from evaporation crucible 104 is led to distribution pipe by steam lead 242
106 central portion.Already vaporised source material leaves distribution pipe 106 by multiple nozzles 22.Distribution pipe 106 can be supported by bearing 102.
According to this paper still other embodiment, two or more steam leads 242 can be arranged at not along the length of distribution pipe 106
Same position.Steam lead 242 may connect to an evaporation crucible or be connected to several evaporation crucibles.For example, each steam
Conduit 242 can have a corresponding evaporation crucible.Or evaporation crucible 104 can be fluidly connected to two or more steam and lead
Pipe 242, this two or more steam leads 242 are connected to distribution pipe 106.
As described herein, distribution pipe can be hollow cylinder.Term cylinder can be regarded as the generally accepted bottom with circle
The curved surface region or shell of the shaped upper part and connection top circle and bottom circle of portion's shape and circle.According to can with it is described herein
Other embodiments additionally or alternatively that other embodiment combines, term cylinder can be in mathematical meaning (mathematical
Sense it is understood to have any bottom shape and consistent shaped upper part on) and connects the curved of shaped upper part and lower shape
Curved surface region and shell.Cylinder is without the need for the section with circle.
Fig. 3 illustrates the constructed profile of the evaporation source 20 according to embodiment described herein.Evaporation source 20 shown in Fig. 3
Including distribution pipe 106.According to several embodiments as described herein, distribution pipe 106 can be perpendicular with Fig. 3 drawing length
Degree side upwardly extends, and particularly extends in the substantially perpendicular direction.Multiple nozzles 22 can be along the length side of distribution pipe 106
To arrangement.One nozzle 23 of this multiple nozzle 22 is schematically depicted as the outlet of distribution pipe 106 in Fig. 3.Fig. 3 section with
Intersect the outlet of nozzle 23.As shown in Figure 3, the outlet that already vaporised source material can be from the inside of distribution pipe 106 by nozzle 23
Flow to substrate 10.Nozzle 23 is configured for guiding the plume 318 of already vaporised source material towards substrate 10.Furthermore this is multiple
The remaining nozzle (not being illustrated in Fig. 3) of nozzle 22 is also configured to guide the plumage of respective already vaporised source material towards substrate 10
Stream.
Evaporation source 20 also includes masking device 30, and masking device 30 may be arranged at these downstreams of nozzle 22.Masking device 30
It is configurable to be used to guide already vaporised source material towards substrate 10, and for the plumage of individually moulding already vaporised source material
Stream.Therefore, masking device 30 can also mean " moulding veil (shaper shield) " in herein.Masking device can be such as
Distribution pipe 106 is detachably secured to by retaining element, retaining element is, for example, screw (not being illustrated in Fig. 3).
Masking device 30 includes multiple holes 32, at least one hole in wherein this multiple hole 32 be configured to individually it is moulding from
The plume for the already vaporised source material that single related nozzle projects.For example, in figure 3, hole 33 is configured to individually mould
The plume 318 that shape projects from nozzle 23, hole 33 is transported through without other plumes projected from second nozzle, and do not had
There are other plumes moulding by hole 33.That is, nozzle 23 is the single related nozzle in hole 33.
In some embodiments, each hole of this some holes 32 of masking device is configurable to individually moulding from single
The plume for the single already vaporised source material that related nozzle projects.That is, the hole of separation is configured in this multiple nozzle
Each nozzle before.Therefore, the plume of each already vaporised source material projected from this multiple nozzle 22 can individually by
The related hole in this multiple hole is moulding.
Compared to being configured to while for the masking device in several holes of moulding more than one plume, individually mould
The plume of shape already vaporised source material can be favourable.Particularly, individually the plume of moulding already vaporised source material can cause to carry
High deposition accuracy, and the shadowing effect provided by mask can be provided.For example, individually moulding already vaporised source material
Plume can produce less plume subtended angle (openingangle), have the plume flank (plume flank) more clearly limited.
Big angle of impingement of the plume on mask and/or on substrate can be avoided.Furthermore it can suitably guide an other plume.
In some embodiments, the quantity of the nozzle of evaporation source may correspond to the quantity in the hole of masking device.Citing comes
Say, the masking device with ten or more holes can be arranged in before the distribution pipe with ten or more nozzles.Citing
For, the masking device with 30 or more holes can be arranged in before three distribution pipes, wherein each distribution pipe bag
Include ten or more nozzles.However, in the following description, hole 33 and nozzle 23 in reference such as Fig. 3, that is, hole 33
Single related nozzle, remaining hole can be corresponded to relative to each autocorrelative nozzle in some embodiments in this multiple hole 32
Ground is moulding and arranges.
In some embodiments, hole can be arranged in before the nozzle of correlation, as shown in Figure 3.For example, spray
The line that the main direction of the launch X of mouth 23 may correspond between the center of the outlet of nozzle 23 and the center in hole 33.Hole 33 can be by structure
The passage 43 for plume 318 is caused, passage 43 is surrounded by perisporium 34, and wherein perisporium 34 is configurable to stop and penetrated from nozzle 23
At least a portion plume 318 of the already vaporised source material gone out.In some embodiments, perisporium 34 is configurable to stop and steamed
Rise material plume 318 exterior angle part.
" hole " can refer to the opening or passage to be surrounded at least in part by wall as used herein, and hole is configured to mould
Shape is guided through the plume of the single already vaporised source material in hole, particularly limiting the maximum subtended angle of plume and to hinder
Keep off the exterior angle part of plume.In some embodiments, passage can entirely be surrounded by perisporium, so as to moulding in each section
Plume, each section includes the main direction of the launch X of related nozzle.
As shown schematically in figure 3, hole 33 is configurable to the passage for plume 318, and this passage is enclosed by perisporium 34
Around.Perisporium 34 can extend around the main direction of the launch X of plume 318, so as to which circumferentially (circumferentially) is moulding described
Plume.In some embodiments, perisporium 34 can extend from the bottom wall 41 of masking device 30 parallel to main direction of the launch X, wherein
Bottom wall 41 may be substantially perpendicular to main direction of the launch X extensions.Bottom wall 41 can have for the opening 42 of plume 318 or for entering
The outlet of the nozzle 23 in hole 33.
In some embodiments that can be combined with other embodiment described herein, masking device can be arranged in away from point
Pipe arrangement 106 is closely located, such as at 5cm on main direction of the launch X or less or 1cm or less distance.In nozzle
It can be favourable that downstream, which is closely located hole arranged, because even nozzle adjacent in this multiple nozzle be arranged with respect to one another in
Closely locate, individually moulding plume is also feasible.
In some embodiments, nozzle 23 can project in masking device 30 at least in part.That is, can have
It is intersecting with both nozzle and masking device and perpendicular to main direction of the launch X section.For example, as shown in Figure 3, spray
The outlet of mouth 23 is projected in hole 33.Jet expansion can be projected in the opening 42 in bottom wall 41, or is projected to by the institute of perisporium 34
In the passage 43 surrounded.This allows directly from the moulding plume 318 projected from nozzle 23 of jet expansion downstream direction so that adjacent
Nozzle can position (see Fig. 4) close to the nozzle 23.
In some embodiments that can be combined with other embodiment described herein, direct mechanical does not contact nozzle 23
Masking device 30.For example, nozzle can be projected in hole at a certain distance from away from hole wall, as shown in Figure 3.Avoid nozzle
Directly contacting between masking device, this can have the effect of pyrolysis coupling between nozzle and masking device.The spray of general heat
Direct heat transfer between mouth and masking device can be avoided so that can be subtracted from masking device towards the heat radiation of substrate
It is few.
In some embodiments, the minimum range between nozzle 23 and masking device 30 is smaller than 3mm or less than 1mm
And/or more than 0.1mm.Because evaporation source can be disposed at subatmospheric pressure (sub-atmospheric pressure)
Under, so the hot-fluid between nozzle and masking device can be reduced generally.
In some embodiments, masking device 30 can be cooled down either actively or passively.In the masking device 30 of cooling
Hot-fluid between nozzle can be by being pyrolyzed this multiple hole of coupling to reduce from this multiple nozzle.
In some embodiments that can be combined with other embodiment described herein, perisporium 34 is configurable to stop tool
There is the plume 318 of the already vaporised source material of certain angle of departure, this certain angle of departure is in the first section relative to main direction of the launch X
More than the first maximum emission angle θ.
Fig. 3 drawing illustrates the first section.First section may include main transmitting originating party to X.In some embodiments,
One section is the plane that horizontal plane and/or the length direction perpendicular to distribution pipe 106 extend.As shown in Figure 3, the perisporium in hole 33
34 are configured to the exterior angle part of the plume 318 along the first section stop already vaporised source material so that transmitting cone (emission
Cone subtended angle) is limited in 2 θ angle.That is, perisporium 34 stops at the angle of departure more than the first maximum emission angle θ
The part already vaporised source material projected by nozzle 23.
In some embodiments, the first maximum emission angle θ is the angle from 10 ° to 45 °, particularly from 20 ° to 30 °
Angle, more particularly about 25 °.Therefore, the θ of subtended angle 2 of the transmitting cone in the first section can be 20 ° or more and be 90 ° or more
It is few, particularly from about 50 °.As shown in Figure 3, the shadowing effect caused by mask 340 can by reduce the first maximum emission angle θ come
Reduce.
In some embodiments that can be combined with other embodiment described herein, perisporium 34 is configurable to stop tool
There is the plume 318 of the already vaporised source material of certain angle of departure, this certain angle of departure is in the second section relative to main direction of the launch X
More than the second maximum emission angle, the second section is perpendicular to the first section.
Second section can be perpendicular to the plane of Fig. 3 drawing.Second section may include main direction of the launch X.At some
In embodiment, the second section is the plane that vertical plane and/or the length direction parallel to distribution pipe 106 extend.The week in hole 33
Wall 34 is configurable to the exterior angle part for stopping the plume 318 of already vaporised source material along the second section so that launches the subtended angle of cone
It is limited in 2 β angle.That is, perisporium 34 stops at the angle of departure more than the second maximum emission angle along the second section
The part already vaporised source material projected by nozzle 23.
In some embodiments, the second maximum emission angle is angle from 10 ° to 60 °, the particularly angle from 30 ° to 40 °,
More particularly about 45 °.Therefore, the subtended angle of the transmitting cone in the second section can be 20 ° or more and be 120 ° or less, special
It is not about 90 °.Shadowing effect caused by mask 340 in the plane perpendicular to Fig. 3 drawing can be by reducing second most
Big emission angle theta is reduced.
In some embodiments, the second maximum emission angle is the angle different from the first maximum emission angle, particularly greater than
The angle of first maximum emission angle.Because larger maximum emission angle can be feasible on the length direction of distribution pipe 106
's.Particularly, on the length direction of distribution pipe, adjacent nozzle is generally configured to project identical evaporation material, and
Can more easily it be adjusted along the interval of the adjacent nozzle of distribution pipe.On the other hand, in the length direction perpendicular to distribution pipe
Direction on nozzle adjacent to each other be configurable to project different materials so that set the plume weight of adjacent nozzle exactly
Folded can be favourable.
First section can be horizontal plane, and the first maximum emission angle can be that the second section can be vertical plane from 20 ° to 30 °,
And the second maximum emission angle can be from 40 ° to 50 °.
In some embodiments, the distance between two adjacent nozzles on the length direction of distribution pipe 106 is permissible
It is from 1cm to 5cm, particularly from 2cm to 4cm.Therefore, the distance between two adjacent holes in this multiple hole, that is, each
The distance between hole center can be from 1cm to 5cm, particularly from 2cm to 4cm.For example, between two adjacent holes
Distance can correspond respectively to the distance between the two adjacent related nozzles.
In some embodiments that can be combined with other embodiment described herein, hole 33 is configured for by perisporium
Circular arc (round) passage 43 of 34 plumes 318 surrounded." circular arc passage " can be regarded as perpendicular to the main direction of the launch
There is the passage of fillet (rounded) profile, fillet profile is, for example, crooked outline, circle (circular) wheel in X section
Wide or cartouche.For example, perisporium 34 can have circular or ellipse in the section perpendicular to main direction of the launch X
Shape.
Circular channel shaping plume 318, to be rotational symmetry relative to the main direction of the launch.Oval-shaped passageway shaping
Plume 318, there is large angle with the major axis for corresponding to oval-shaped passageway in the first section, and correspond in the second section
The short axle of oval-shaped passageway has Narrow Flare Angle.The major axis of oval-shaped passageway may be arranged in vertical direction, and oval-shaped passageway
Short axle may be arranged in horizontal direction.
Perisporium 34 can form circle in the section perpendicular to main direction of the launch X.This diameter of a circle can be 3mm or more it is big simultaneously
And can be 25mm or smaller, particularly 5mm or bigger and be 15mm or smaller, this diameter of a circle i.e. passage it is interior
Footpath.Can be in the diameter of the downstream Measurement channel of passage, the downstream of passage limits the maximum subtended angle of plume 318.
In some embodiments, the length of the perisporium 34 on main direction of the launch X can be constant.Can be with this paper institutes
In the other embodiment for stating other embodiment combination, hole 33 is configurable to for the plume 318 that is surrounded by perisporium 34
Passage 43, wherein the length of the perisporium on main direction of the launch X circumferentially changes.More particularly, towards the week of substrate guided
The front end 35 of wall 34 can have a segment distance away from jet expansion, and this distance circumferentially changes.By providing circumferentially change length
The perisporium of degree, the subtended angle of plume 318 are configurable in various sections be different.
As shown in Figure 3, perisporium 34 can have the first length T1 in the first section, and the first section includes the main direction of the launch
X, and perisporium can have the second length T2 less than the first length T1 in the second section, and the second section includes the main direction of the launch
X and perpendicular to the first section extend.First section can be perpendicular to the length direction of distribution pipe, for example, horizontal plane.Second cuts open
Face can be parallel to the length of distribution pipe, for example, vertical plane.
The length of perisporium can continuously change to the second length in the second section from the first length T1 in the first section
T2.That is, the front end 35 of perisporium 34 can not include step (step) and not interrupt in the circumferential.Therefore, plume 318
Subtended angle can gradually change in the circumferential.Deposition accuracy can be improved.
In some embodiments, the length that the first length T1 can be between 8mm and 20mm, particularly from about 12mm, and/
Or second length T2 can be between 3mm and 15mm length, particularly from about 6.5mm." length " of perisporium may correspond to vector
Projection length, this vector connects on the main direction of the launch X front end of perisporium and jet expansion in corresponding section.
When the front end 35 of perisporium has wavy (wave-like) or undulations (undulating in the circumferential
When shape), the pixel with sharp edges can be deposited on substrate.Crest can be located at the first section (namely Fig. 3 figure
Face) in, and wave base (wave base) may be arranged in the second section (namely perpendicular to the plane of the first section).Perisporium
34 front end 35 may include two crests and two wave bases, as shown in Figure 3.
In some embodiments, this at least hole can have 3mm or bigger and 25mm or less diameter, particularly
5mm or bigger and 15mm or less diameter.Wherein, can be limited in the diameter of the measured hole of front end 35 in hole, the front end 35 in hole
The maximum emission angle for the plume 318 propagated towards substrate 10.
The wall of distribution pipe can be mounted or be assemblied in the wall of distribution pipe by heating element heats, heating element heater.In order to reduce
Towards the heat radiation of substrate, the outer veil around the inwall of the heating of distribution pipe can be cooled.Extra second can be set
Outer veil, further to reduce the heat load towards deposition region or substrate respectively.According to can with it is described herein other implementation
Some embodiments that mode combines, these veils can be set to metallic plate, have and are assemblied in metal mask or are arranged at
The conduit for cooling fluid in metal mask, fluid are, for example, water.Can additionally or alternatively set thermo-electric cooling device or
Other cooling devices are to cool down veil.Therefore, the inside of distribution pipe is positively retained at high temperature, and this high temperature is for example higher than source material
Evaporating temperature, and can be reduced towards deposition region and towards the heat radiation of substrate.
Fig. 4 illustrates includes distribution pipe 106, the second distribution pipe 107 and the 3rd distribution pipe according to embodiment described herein
108 evaporation source 20, distribution pipe 106, the second distribution pipe 107 and the 3rd distribution pipe 108 are respectively in the longitudinal direction adjacent to that
This extension, wherein drawing of the length direction perpendicular to Fig. 4.Evaporation source 20 includes multiple nozzles 22, wherein the one of each distribution pipe
Individual nozzle is depicted as the outlet of corresponding distribution pipe in Fig. 4.Furthermore evaporation source 20 includes masking device 30, masking device 30
Including multiple holes 32, wherein each hole in the multiple hole 32 is arranged in before single related nozzle, and it is constructed
The plume of the already vaporised source material projected into the moulding nozzle closed from corresponding single-phase.
It can be similar to the hole 33 shown in Fig. 3 and construct and arrange this some holes so that the explanation of the above is referred to, the above
Illustrate not repeat herein.
Particularly, in some embodiments, nozzle can project in hole without contact hole respectively.Therefore, masking device
30 can be pyrolyzed coupling from this multiple nozzle 22 and/or from these distribution pipes.It can be reduced towards the heat radiation of substrate.
In some embodiments that can be combined with other embodiment described herein, masking device may include multiple separation
Shielding cell 60, these shielding cells 60 are disposed adjacent one another, each masking of the shielding cell 60 of wherein this multiple separation
Unit includes one or more holes in this multiple hole 32.
" separation " shielding cell used herein can refer to as two or more shielding cells, this two or more screenings
Cover unit not to be in direct contact with one another, and be provided without the part of separation directly mechanically connected.As shown in Figure 4, it is more
These shielding cells of the shielding cell 60 of individual separation are not in direct contact with one another.For example, the shielding cell of these separation
Corresponding distribution pipe can be fixed on separatedly using one or more corresponding retaining elements.
In some embodiments, each shielding cell 60 of the shielding cell of this multiple separation may include this multiple hole 32
Single hole.Each hole is configurable to the passage surrounded by containment wall, is configured to moulding single already vaporised source material
The plume of material.
In other embodiments, at least one shielding cell of the shielding cell 60 of multiple separation includes for example linear
Two, three, four, five or more holes in this multiple hole 32 of arrangement, this some holes can be connected to each other by supporting construction.This is at least one
The distance between two adjacent holes of shielding cell can be respectively 1cm or bigger and 5cm or smaller.
In some embodiments, each shielding cell of this multiple shielding cell can include this multiple hole two or more
Multiple holes.Masking device 30 be installed to distribution pipe can the shielding cell of masking device quantity reduce when it is helpful.Therefore,
The quantity for increasing the hole of each shielding cell can be favourable.
In some embodiments, the quantity in the hole of each shielding cell is 10 or less, particularly 5 or less.
When shielding cell does not extend beyond long length, shielding cell can be easier to a distribution pipe in these distribution pipes
Local thermal expansion and contraction.Particularly, when a distribution pipe expansion or shrinkage in these distribution pipes, adjacent masking list
Member can be moved relative to each other.
Illustrate in Fig. 4 and be connected to the shielding cell of distribution pipe 106 and mechanically decoupled from remaining shielding cell, so as to phase
It is moveable for remaining shielding cell.For example, the temperature of distribution pipe 106 may differ from the second distribution pipe 107
Temperature and temperature different from the 3rd distribution pipe 108 are changed so that these distribution pipes can be during deposition relative to each other
Slightly move.These shielding cells can follow the motion of corresponding distribution pipe, because these shielding cells are respectively from remaining
Shielding cell mechanically decouples.Therefore, or even when these distribution pipes are moved relative to each other, or as one in these distribution pipes
When distribution pipe thermal expansion or contraction, the plume of already vaporised source material can be shaped with stationary mode.One or more of shielding cell
Hole can follow the motion of this one or more related nozzle respectively.
In some embodiments, each shielding cell of the shielding cell 60 of this multiple separation can be from this multiple separation
The remaining shielding cell of shielding cell mechanically decouples, so as not to follow the motion of the thermal initiation of remaining shielding cell.
In some embodiments that can be combined with other embodiment described herein, the shielding cell 60 of this multiple separation
At least one shielding cell may connect to single distribution pipe, so as on the length direction of the single distribution pipe with this
Single distribution pipe thermal expansion and contraction, particularly so as to the single distribution pipe thermal contraction or expansion when, relative to connection
Moved in other shielding cells of the single distribution pipe.
The main direction of the launch of these nozzles of distribution pipe 106 can be relative to the second distribution pipe 107 and/or the 3rd distribution pipe
The main direction of the launch of 108 these nozzles tilts.For example, main direction of the launch tiltable so that projected from distribution pipe 106
The plume of already vaporised source material can be with the already vaporised source material projected from the second distribution pipe 107 and/or from the 3rd distribution pipe 108
Plume is overlapping.In some embodiments, these distribution pipes are arranged so that the main direction of the launch of these distribution pipes can be in substrate
It is substantially intersecting on surface.The plume projected in section from different distribution pipes can be led to substantially identical on substrate
Region.
In some embodiments, a distribution pipe such as distribution pipe 106 in these distribution pipes, is configurable to deposit
Main material, and at least one other distribution pipe such as the second distribution pipe 107, are configurable to deposit secondary material, example
Such as dopant.
Fig. 5 illustrates the evaporation source 20 according to embodiment described herein with profile, and wherein this section is in distribution pipe 106
Extend on length direction.The length direction of distribution pipe can be vertical direction.
In some embodiments, the second distribution pipe 107 and/or the 3rd distribution pipe 108 can be on the both sides of distribution pipe 106
It is arranged essentially parallel to distribution pipe 106 to extend, as shown in Figure 4.
Distribution pipe 106 includes multiple nozzles 22, these nozzles 22 on the length direction of distribution pipe adjacent to arranging each other.
The first jet 402 and second nozzle 404 of this multiple nozzle are illustrated in Fig. 5.First plume 403 of already vaporised source material is by
One nozzle 402 is projected, and the second plume 405 of evaporation source material is projected by second nozzle 404.
In this multiple nozzle arranged downstream masking device 30, with the moulding already vaporised source material projected from this multiple nozzle
Plume.Masking device 30 may include multiple single shielding cells, and wherein this multiple shielding cell a shielding cell 61 is painted
It is shown in Figure 5.
Shielding cell 61 includes the first hole 406 and the second hole 408, and the first hole 406 and the second hole 408 can be according to above-mentioned implementations
Any embodiment construction of mode.First hole 406 is configured to individually moulding the first plume projected from first jet 402
403, and the second hole 408 is configured to individually moulding the second plume 405 projected from second nozzle 404.
Shielding cell 61 may include more than two hole in this multiple hole linearly arranged, such as three, four or five
Individual hole.This some holes can be connected by supporting construction, and supporting construction is, for example, sheet elements.The hole of shielding cell 61 is configurable to use
In the plume of the individually already vaporised source material of moulding three, four or five adjacent nozzles, this three, four or five are adjacent
Length direction of the nozzle along distribution pipe 106 is disposed adjacent to each other.
Distribution pipe may include 10 or more the nozzles that linearly arrangement is set.Therefore, more than one masking list
Member can be fixed on distribution pipe in a manner of straight line, and more than one shielding cell is, for example, two, three or more masking
Unit.
Each shielding cell of the shielding cell of this multiple separation can be mechanically fastened in evaporation source this two or more
The single distribution pipe of individual distribution pipe.These shielding cells mechanically to each other can decouple and/or pyrolysis coupling so that these individually hide
It can be feasible to cover the relative motion between unit.Therefore, when the distribution pipe that these shielding cells are fixed to extends or receives
During contracting, these shielding cells can be moved relative to each other.
Shielding cell 61 is securable to distribution pipe 106, to be pyrolyzed coupling from distribution pipe 106.For example, shielding cell 61
It can be maintained at by one or more spacer elements 411 at a certain distance from distribution pipe 106, spacer elements 411 can arrange
Between shielding cell and distribution pipe.These spacer elements 411 are configurable to support section, and these support sections are arranged in
Between these nozzles of distribution pipe.Spacer elements 411 can provide small contact area, and this is to reduce from distribution pipe 106
Towards the hot-fluid of shielding cell 61.For example, the contact area of spacer elements 411 can be 1mm2Or it is smaller, particularly
0.25mm2It is or smaller.Shielding cell 61 can be fixed on distribution pipe 106 by one or more retaining elements, and retaining element is, for example,
Screw, it can be made up of the metal with low heat conductivity.
The length of shielding cell 61 on the length direction of distribution pipe can be 20cm or smaller, particularly 10cm or more
It is small.Due to the small length of shielding cell, shielding cell can follow the local motion of the thermal initiation of distribution pipe 106, for example, expansion or
Contractile motion.For example, when distributing tube swelling, the first shielding cell for being fixed on distribution pipe is moved away from being fixed on together
Second shielding cell of one distribution pipe.When distribution pipe is shunk, the first shielding cell for being fixed on distribution pipe can be towards being fixed on
The second shielding cell movement of same distribution pipe.
In some embodiments that can be combined with other embodiment described herein, shielding cell 61 is along shielding cell
Length direction be rigidly secured to distribution pipe in single fixed part office, such as at the central portion of shielding cell.At it
His position, shielding cell 61 is securable to distribution pipe 106, to provide the relative motion between shielding cell and distribution pipe.Lift
For example, in Figure 5 in shown embodiment, the first end 412 of shielding cell 61 and the second end of shielding cell 61
413 for example can be moveably secured to distribution pipe by retaining element, and retaining element is, for example, screw, and screw, which runs through, to be set
Slotted eye in masking device.In some embodiments, slotted eye can be on the length direction of shielding cell in distribution pipe and screening
Offer is more than 0.01mm and the gap less than 0.5mm between covering unit, and gap is, for example, about 0.1mm.
Fig. 6 illustrates the masking device 500 for evaporation source according to embodiment described herein with perspective view.Masking device
It is configured to single part and does not include the shielding cell of multiple separation.Masking device 500 includes multiple holes, and wherein this is multiple
Each hole in hole is configured to the passage surrounded by containment wall, and each hole in wherein this multiple hole is configured to individually moulding
The plume of the already vaporised source material projected from the single related nozzle of evaporation source.
Masking device 500 is configured to be assemblied in the evaporation source with three distribution pipes.Therefore, masking device 500 includes
Three vertically arranged hole posts being disposed adjacent to each other in supporting construction, supporting construction is, for example, sheet elements.Central hole post
Those holes can be offset relative to column jacket.This allows three adjacent to the greater compactness of arrangement of mutual distribution pipe.
This some holes is set individually ovalisation passage.Therefore, the already vaporised source material of this some holes is left in vertical direction
First maximum emission angle of the plume of material is more than the second of the plume for the already vaporised source material for leaving this some holes in the horizontal direction
Maximum emission angle.
Fig. 7 illustrates the shielding cell of the masking device for evaporation source according to embodiment described herein with perspective view
600.It may include the shielding cell 600 of multiple separation, such as three or more according to the masking device of embodiment described herein
It is individual, particularly 12 or more shielding cells 600.
Shielding cell 600 may include two or more holes and/or ten or less a hole of hole, particularly five.Each hole
The passage surrounded by containment wall is configurable to, containment wall is, for example, perisporium.Circular arc passage, particularly circular passage can save
Save space and easily fabricated.Due to the reason of rotational symmetry, circular arc passage can have other advantages:Already vaporised source material can be
With identical angle of impingement percussion containment wall on circumferential.During deposition, already vaporised source material can accumulate in uniformly in the circumferential direction
On containment wall.The cleaning of shielding cell can become easier to.
This some holes of shielding cell 600 can be arranged to straight line, and the straight line has necessarily between adjacent hole
Distance, this distance are 1cm or bigger and 5cm or smaller, particularly from about 2cm.Shielding cell 600 is configurable to single type
(one-piece) part, wherein this some holes can be connected by supporting construction 612, and supporting construction 612 is, for example, the sheet material member extended
Part.Shielding cell 600 can have 3cm or smaller, 2cm or smaller or even 1cm or smaller width.
Supporting construction 612 may include positioned at one or more holes of first end 613 and positioned at relative with first end 613
One or more holes at the second end 614, the shielding cell for example is fixed on into distribution pipe via screw or bolt.At some
In embodiment, other holes can be respectively arranged between this some holes.
Each hole of shielding cell 600 is configurable to the individually moulding single related nozzle injection from evaporation source
The plume of already vaporised source material.
In some embodiments as described herein, this some holes of shielding cell 600 can have between 3mm and 25mm respectively
Diameter, the diameter between particularly 5mm and 15mm.The minor diameter of this some holes of the shielding cell can improve deposition accuracy.
However, small bore dia is intended to be easier to cause to block, this may reduce deposition efficiency and deposition uniformity.
The several embodiments for providing operations described herein evaporation source maintain high deposition accuracy to be used for long duration, and
The obstruction of this some holes can be avoided simultaneously.
Reference picture 8A and Fig. 8 B illustrate the method for operating evaporation source 20.
Method described herein includes already vaporised source material being deposited on substrate 10, as shown in Figure 8 A.Already vaporised source
The deposition of material includes guiding already vaporised source material, some of already vaporised source materials along main direction of the launch X towards substrate 10
Shielded device 30 stops that masking device 30 is arranged between these nozzles and substrate 10, to individually moulding already vaporised source
The plume of material.
During deposition, masking device 30 is positively retained at the first temperature, and the first temperature can be below low temperature, such as 150 DEG C
Temperature, particularly 100 DEG C or lower temperature, or 50 DEG C or lower temperature.For example, during deposition, towards base
The surface of the masking device of plate is positively retained at 100 DEG C or lower temperature, to reduce the heat towards mask and/or towards substrate
Radiation.In some embodiments, such as by cooling duct or the thermo-electric cooling device by being assembled to the masking device, hide
Covering device 30 can actively or passively be cooled down during deposition.
Because the surface of masking device 30 is positively retained at low temperature, the already vaporised source material condensable that is stopped by masking device
In on masking device and being attached to masking device.Bore dia may diminish, and may have the danger of obstruction.
Can be to be illustrated in Fig. 8 B after the depositional phase being illustrated in Fig. 8 A according to several methods as described herein
Cleaning stage, wherein the second temperature by the way that masking device to be heated above to the first temperature, is accumulated on masking device 30
At least part of source material removes from masking device.Masking device can be heated at least partially, particularly with accumulation
The surface segment of the masking device of source material.For example, the containment wall around this multiple hole 32 of masking device can be heated,
Because some already vaporised source materials are typically stopped by the containment wall around this some holes.
In some embodiments, masking device can be at least partially heated above the steaming of source material during cleaning
The temperature of hair temperature, temperature of this temperature for example, higher than 100 DEG C or the temperature higher than 200 DEG C, particularly 300 DEG C or higher
Temperature.The source material of attachment can be discharged from masking device and re-evaporation.Therefore, cleanable masking device.
In some embodiments, masking device 30 is towards substrate 10 during deposition, and masking device 30 is not heating
Period is towards substrate 10.Therefore, can avoid being deposited on substrate from masking device by re-evaporation source material.Furthermore can avoid because
Come the thermal expansion of mask and/or substrate caused by the heat radiation of the masking device for heating of controlling oneself.
In some embodiments that can be combined with other embodiment described herein, already vaporised source material is penetrated by nozzle
Going out can stop during cleaning.For example, in cleaning stage II, nozzle, which can be closed or evaporated, to be stopped.The loss of source material
It can be reduced.
In some embodiments that can be combined with other embodiment described herein, depositing device can be set to
In the maintenance position II of cleaning.Particularly, after deposition, depositing device can be brought into maintenance position II from deposition position I,
This some holes of masking device is directed in deposition position I towards substrate 10, and this some holes of masking device is in maintenance position II
It is not directed to towards substrate.
" deposition position " can be a kind of state of depositing device as used herein, and depositing device prepares in this state
Well towards substrate guided already vaporised source material.For example, this some holes of these nozzles of evaporation source and masking device can be towards
Substrate or the deposition region towards depositing device.
" maintenance position " can be a kind of state of depositing device as used herein, not be suitable for court in this state
To substrate guided already vaporised source material.For example, this some holes of these nozzles of evaporation source and masking device can not be towards base
Plate or not towards the deposition region of depositing device.Depositing device is set from deposition position may include evaporation source into maintenance position
Motion, such as rotary motion.In some embodiments, depositing device is set may include into maintenance position by evaporation source
It is moved in certain position, in this position, sets heater 50 to heat masking device, and/or masking device is towards material
Expect collector unit 40, material collector unit 40 is, for example, containment wall.
In some embodiments, depositing device is set into maintenance position II may include that evaporation source 20 is collected with material
Relative motion between unit 40.For example, in the embodiment shown in Fig. 8 A and Fig. 8 B, evaporation source 20 is from Fig. 8 A
Shown deposition position I is moved to the maintenance position II shown in Fig. 8 B, wherein collecting list towards material in maintenance position II
Member 40 guides masking device 30.
Evaporation source is moved into maintenance position II may include to make evaporation source 20 rotate certain anglec of rotation, and this anglec of rotation is particularly
20 ° or bigger of rotation angle α, the more particularly anglec of rotation from 60 ° to 120 °.In the fig. 8b in shown embodiment, evaporation
Source rotates about 90 ° of the anglec of rotation to maintenance position II from deposition position I.
Masking device 30 can be heated in maintenance position II, and masking device 30 is collected in maintenance position II towards material
Unit 40.Material collector unit 40 can be configured to wall elements, such as condensation wall or containment wall.As seen in fig. 8b, wall elements
It can be bending.The distance between wall elements and masking device can keep substantially permanent during the rotary motion of evaporation source
It is fixed.Furthermore due to the curved shape of wall elements, substantially during the whole rotary motion of evaporation source 20, wall elements can conduct
Stop the veil of the already vaporised source material projected from evaporation source 20.For example, wall elements can be relative to the rotation of evaporation source
Axle extends beyond 45 ° or bigger of angle, particularly 90 ° or bigger angle.
In some embodiments, cleaning may include to heat the masking device period of 1 second or longer, particularly 10 seconds or more
The long period.Preferable cleaning result can be caused during longer heating, but may retard evaporation technique.Good cleaning result
It can be realized by the period between heating 1 second and 60 seconds.
After the cleaning, it is sustainable by already vaporised source material be deposited on substrate or other substrates on.Continuous deposition it
Before, in some embodiments, evaporation source can be brought back to deposition position I or to other deposition positions from maintenance position II.Lift
For example, evaporation source angle rotatable (- α) and return to deposition position I, or evaporation can be further rotated along identical direction of rotation
Source is, for example, another angle [alpha] and evaporation source is brought to other deposition positions.
In some embodiments that can be combined with other embodiment described herein, deposition and cleaning are alternately held
OK.For example, masking device rear during predetermined deposition can be cleaned respectively, and after the cleaning, deposition can continue respectively.
In some embodiments, the cleaning of masking device can perform after already vaporised source material is deposited on each substrate, or
Person performs after the substrate of coated predetermined quantity, for example, coated 2 substrates, 4 substrates or more substrate it
After perform.In some embodiments, the cleaning of masking device can respectively several minutes, the deposition operation of a few hours or a couple of days it
After perform.Period before cleaning execution may depend on the size and shape of this some holes, the outlet of evaporation source and the screening of masking device
The temperature on the surface of masking device during covering the distance between device and depositing.For example, cleaning will can steam respectively
Performed after the material that rises is deposited on each substrate or up to after during the deposition of several hours.
In some embodiments, accumulation of the measurable source material on masking device, and clean and can reach
Performed after predetermined accumulation.The obstruction of this some holes of masking device can be avoided, and the already vaporised source material of percussion substrate can be obtained
Constant plume.
In order to reduce the heat load as caused by the masking device heated on substrate, it may be such that masking device after the cleaning
Cool down.For example, after the cleaning and before continuous deposition, masking device can be cooled to the first temperature, such as 150 DEG C
Or lower temperature or 100 DEG C or lower temperature.In some embodiments, before continuous deposition, it is configured to use
It is closed in the heater 50 that masking device is heated during cleaning up to one section of scheduled period.In some embodiments, exist
After cleaning and/or before continuous deposition, masking device is passively or actively cooling.Furthermore during deposition, masking device can
Additionally or alternatively it is passively or actively cooling.Passive cooling may include to be cooled down by cooling fluid.Active cooling can wrap
Include and cooled down by active cooling element, active cooling element is, for example, thermoelectric cooling element, peltier (Peltier) element
Or piezoelectricity cooling element.
Figure 10 is illustrated already vaporised source material to be deposited on to the flow chart of the method on substrate 10 in vacuum chamber.
In square 1010, already vaporised source material is guided through multiple nozzles of one or more distribution pipes of evaporation source, and wherein this is more
Each nozzle of individual nozzle produces the plume for the already vaporised source material propagated towards substrate.In square 1020, already vaporised source material
The plume of material is individually moulding by multiple holes of masking device.
Moulding plume may include to stop at least part of plume using this some holes.After a period of time, already vaporised source material
Material may be attached to this some holes, and this may cause the diameter of this some holes to reduce.
, can be by least partially heating masking device in the maintenance position of depositing device in the square 1030 of operation
To clean masking device.Heating can cause the source material of accumulation from masking device re-evaporation.After the cleaning, deposition can continue into
OK.
In some embodiments, can periodically be cleaned.
This written description discloses present disclosure, including optimal mode using several examples, and also causes any ability
Field technique personnel can put into practice described object, including manufacture and use any device or system and perform any side being incorporated to
Method.Although various specific embodiments are in foregoing middle disclosure, and the non-exclusive feature of above-mentioned embodiment can be tied each other
Close.The scope of patentability is defined by the claims, and if other examples have from the literal language of claim without different
Structural detail, or these other examples are included with the equivalent structure with the insubstantial upper difference of the literal language of claim
Element, these other examples are intended to include within the scope of the claims.
Claims (15)
1. a kind of evaporation source (20), already vaporised source material is deposited on substrate, the evaporation source includes the evaporation source:
One or more distribution pipes (106), the distribution pipe have multiple nozzles (22), wherein the multiple nozzle (22) is each
Nozzle is configured for the plume towards the substrate (10) guiding already vaporised source material;With
Masking device (30), the masking device includes multiple holes (32), wherein at least one hole quilt of the multiple hole (32)
It is configured to the plume (318) of the individually moulding already vaporised source material projected from single related nozzle.
2. evaporation source as claimed in claim 1, wherein at least one hole be configured to be surrounded by perisporium (34) it is described
The passage of plume (318), have wherein the perisporium (34) is configured to stop in the first section relative to the main direction of the launch
(X) plume (318) of the already vaporised source material of the angle of departure bigger than the first maximum emission angle (θ), and wherein institute
State perisporium (34) and be configured to stop have in the second section relative to the main direction of the launch (X) second maximum emission angle of ratio
The plume (318) of the already vaporised source material of (β) the big angle of departure, second section cut open perpendicular to described first
Face.
3. evaporation source as claimed in claim 2, wherein first section is horizontal plane, second section is vertical plane,
First maximum emission angle (θ) is the angle from 10 ° to 45 °, and second maximum emission angle is the angle from 15 ° to 60 °,
Particularly wherein described first maximum emission angle (θ) is less than second maximum emission angle.
4. the evaporation source as described in any one of claims 1 to 3, wherein the outlet for the nozzle that the single-phase closes is at least in part
Project in the masking device (30), do not contact the masking device (30) particularly.
5. the evaporation source as described in any one of Claims 1-4, wherein at least one hole is configured to be enclosed by perisporium (34)
Around the plume (318) passage, wherein length of the perisporium in the main direction of the launch (X) circumferentially changes, especially
It is that wherein described perisporium (34) has the first length (T1) in the first section, first section includes the main direction of the launch
(X), and the perisporium (34) has the second length (T2) in the second section, and second section includes the main launch party
Extend to (X) and perpendicular to first section, second length (T2) is less than first length (T1).
6. evaporation source as claimed in claim 5, wherein the length of the perisporium (34) is from the institute in first section
State the first length (T1) and constantly change second length (T2) into second section, particularly wherein described perisporium
(34) front end (35) has along the circumferential wave-like.
7. the evaporation source as described in any one of claim 1 to 6, wherein at least one hole be configured to circular arc passage,
Circular channel or oval-shaped passageway, particularly wherein described at least one hole have more than or equal to 3mm and are less than or equal to
25mm diameter.
8. the evaporation source as described in any one of claim 1 to 7, wherein the masking device (30) includes the masking of multiple separation
Unit (60), wherein each shielding cell of the shielding cell (60) of the multiple separation includes one of the multiple hole (32)
Or more hole.
9. evaporation source as claimed in claim 8, wherein at least one masking list of the shielding cell (60) of the multiple separation
Two, three, four, five or more holes in the multiple hole (32) that the supporting construction that member includes linearly arranging is connected, especially
It is to have to be more than or equal to 1cm and the distance less than or equal to 5cm respectively between adjacent hole.
10. evaporation source as claimed in claim 9, wherein at least one shielding cell is connected to one or more described distribution
The single assigned pipe of (106) is managed, for example, it is hot swollen with the single assigned pipe on the length direction of the single assigned pipe
Swollen and contraction.
11. the evaporation source as described in any one of claim 8 to 10, including two or more extended adjacent to each other distribution pipe
(106), wherein each shielding cell of the shielding cell (60) of the multiple separation is mechanically fixed to one or more described points
The single assigned pipe of pipe arrangement, and two, three or more including the multiple hole (32) holes, to individually moulding described more
The plume of the already vaporised source material of two, three or more adjacent nozzles of individual nozzle (22).
12. the evaporation source as described in any one of claim 8 to 11, wherein the shielding cell (60) of the multiple separation is at least
The remaining shielding cell of one shielding cell from the shielding cell (60) of the multiple separation mechanically decouples, such as so as to phase
It is moveable for the remaining shielding cell.
13. the evaporation source as described in any one of claim 8 to 12, wherein the shielding cell (60) of the multiple separation is at least
One shielding cell is pyrolyzed coupling from one or more described distribution pipes, and particularly wherein described at least one shielding cell is by one or more
Individual spacer elements (411) are maintained at the distance at a distance of one or more distribution pipes (106).
14. one kind is used for the masking device (30) of evaporation source (20), the evaporation source by already vaporised source material being deposited on base
On plate (10), evaporation source of the evaporation source particularly described in any one of claim 1 to 13, the masking device includes:
The shielding cell (60) of multiple separation, wherein each shielding cell of the shielding cell (60) of the multiple separation includes one
Or multiple holes, the hole are respectively configured to the passage surrounded by perisporium (34), wherein each hole quilt in one or more holes
It is configured to the plume (318) of the individually moulding already vaporised source material projected from the single related nozzle of the evaporation source.
15. it is a kind of already vaporised source material is deposited on into the method on substrate (10) in vacuum chamber, including:
Already vaporised source material, wherein institute are guided by multiple nozzles (22) of one or more distribution pipes (106) of evaporation source (20)
The each nozzle for stating multiple nozzles (22) produces the plume of the already vaporised source material towards the substrate (10) transmission;With
By the plume of multiple holes (32) individually moulding already vaporised source material of masking device (30).
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KR (1) | KR102058612B1 (en) |
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Cited By (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN109628886A (en) * | 2019-01-10 | 2019-04-16 | 云谷(固安)科技有限公司 | A kind of evaporation coating device, evaporation coating method, mixed layer and display panel |
CN110691861A (en) * | 2018-05-04 | 2020-01-14 | 应用材料公司 | Evaporation source for depositing evaporation material, vacuum deposition system and method for depositing evaporation material |
CN112135920A (en) * | 2018-08-03 | 2020-12-25 | 应用材料公司 | Evaporation source for depositing evaporated source material, method for shielding evaporated source material and shielding device for evaporation source |
CN114423881A (en) * | 2019-09-19 | 2022-04-29 | 应用材料公司 | Evaporation source, shutter device and evaporation method |
CN114645249A (en) * | 2020-12-21 | 2022-06-21 | 应用材料公司 | Method for depositing evaporated source material on substrate and deposition apparatus |
Families Citing this family (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
IL154472A (en) * | 2003-02-16 | 2007-10-31 | Amir Satran | Cutting tool and cartridge therefor |
JP7036676B2 (en) * | 2018-06-13 | 2022-03-15 | 株式会社アルバック | Thin-film deposition source for vacuum-film deposition equipment |
JP7503398B2 (en) | 2020-03-04 | 2024-06-20 | 株式会社アルバック | Vacuum deposition equipment parts |
KR102649397B1 (en) | 2021-08-03 | 2024-03-21 | 엘지전자 주식회사 | Linear Deposition Source |
Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2009228091A (en) * | 2008-03-25 | 2009-10-08 | Canon Inc | Vapor deposition apparatus |
CN101997090A (en) * | 2009-08-05 | 2011-03-30 | 三星移动显示器株式会社 | Pparatus for thin layer deposition and method for manufacturing of organic light emitting display apparatus using the same |
Family Cites Families (10)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS648267A (en) * | 1987-06-30 | 1989-01-12 | Sharp Kk | Thin film forming device |
JP5247239B2 (en) * | 2008-05-22 | 2013-07-24 | 日立造船株式会社 | Emission part structure of vacuum evaporation system |
KR101193192B1 (en) * | 2009-09-01 | 2012-10-19 | 삼성디스플레이 주식회사 | Apparatus for thin layer deposition |
KR101182265B1 (en) | 2009-12-22 | 2012-09-12 | 삼성디스플레이 주식회사 | Evaporation Source and Deposition Apparatus having the same |
KR101558519B1 (en) * | 2010-09-15 | 2015-10-08 | 삼성디스플레이 주식회사 | Apparatus for depositing organic material and method for depositing thereof |
JP5356627B2 (en) | 2011-03-11 | 2013-12-04 | シャープ株式会社 | Vapor deposition particle injection apparatus and vapor deposition apparatus |
KR20140006499A (en) | 2012-07-05 | 2014-01-16 | 삼성디스플레이 주식회사 | Evaporation apparatus |
KR20140025795A (en) * | 2012-08-22 | 2014-03-05 | 에스엔유 프리시젼 주식회사 | Selective linear evaporating apparatus |
CN104099571A (en) * | 2013-04-01 | 2014-10-15 | 上海和辉光电有限公司 | Evaporation source component, film deposition device and film deposition method |
CN106133184B (en) * | 2014-03-21 | 2020-03-17 | 应用材料公司 | Evaporation source for organic material |
-
2016
- 2016-05-10 CN CN201680027463.4A patent/CN107592889A/en active Pending
- 2016-05-10 WO PCT/EP2016/060439 patent/WO2017194097A1/en active Application Filing
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-
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Patent Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2009228091A (en) * | 2008-03-25 | 2009-10-08 | Canon Inc | Vapor deposition apparatus |
CN101997090A (en) * | 2009-08-05 | 2011-03-30 | 三星移动显示器株式会社 | Pparatus for thin layer deposition and method for manufacturing of organic light emitting display apparatus using the same |
Cited By (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN110691861A (en) * | 2018-05-04 | 2020-01-14 | 应用材料公司 | Evaporation source for depositing evaporation material, vacuum deposition system and method for depositing evaporation material |
CN112135920A (en) * | 2018-08-03 | 2020-12-25 | 应用材料公司 | Evaporation source for depositing evaporated source material, method for shielding evaporated source material and shielding device for evaporation source |
CN109628886A (en) * | 2019-01-10 | 2019-04-16 | 云谷(固安)科技有限公司 | A kind of evaporation coating device, evaporation coating method, mixed layer and display panel |
CN114423881A (en) * | 2019-09-19 | 2022-04-29 | 应用材料公司 | Evaporation source, shutter device and evaporation method |
CN114645249A (en) * | 2020-12-21 | 2022-06-21 | 应用材料公司 | Method for depositing evaporated source material on substrate and deposition apparatus |
Also Published As
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CN115074662A (en) | 2022-09-20 |
KR20180116129A (en) | 2018-10-24 |
WO2017194097A1 (en) | 2017-11-16 |
JP2018521216A (en) | 2018-08-02 |
JP6941564B2 (en) | 2021-09-29 |
TWI638899B (en) | 2018-10-21 |
TW201809322A (en) | 2018-03-16 |
KR102058612B1 (en) | 2019-12-23 |
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