CN107560557B - A kind of method and device measuring deep hole wall films thickness - Google Patents
A kind of method and device measuring deep hole wall films thickness Download PDFInfo
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- CN107560557B CN107560557B CN201710775180.4A CN201710775180A CN107560557B CN 107560557 B CN107560557 B CN 107560557B CN 201710775180 A CN201710775180 A CN 201710775180A CN 107560557 B CN107560557 B CN 107560557B
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Abstract
The embodiment of the present application discloses a kind of method for measuring deep hole wall films thickness, this method calculates by the way of layer by layer deposition calculating plural layers on deep hole side wall the thickness of every layer film, i.e., every deposition thin film just uses Ellipsometric Spectrum Method measurement to obtain an actual spectrum on deep hole side wall.For thin film any on deep hole side wall, after obtaining actual spectrum, the thickness of every thin film and the geometrical structure parameter of deep hole before being measured when according to the actual spectrum and depositing every thin film before, the thickness of the layer film can be calculated, to realize the thickness of every layer film in plural layers on measurement deep hole side wall, to guarantee the accuracy purpose of every layer film thickness in film deposition process.
Description
Technical field
This application involves field of optical measurements more particularly to a kind of method and devices for measuring deep hole wall films thickness.
Background technique
With the development of thin film technique, film can be applied to integrated circuit, miniature thin-film capacitor, three-dimensional storage
Deng.In the technique for preparing film, film thickness is a very important parameter, is directly related to the element using the film
It can work normally, therefore, film thickness accurately be measured in the technique for preparing film, to guarantee the accuracy of film thickness
It is very necessary.For example, needing to deposit plural layers on the side wall of deep hole in some equipment with deep hole.For
For these equipment with deep hole, the thickness of the plural layers of the deposited on sidewalls of deep hole can be based on oval polarization spectrum
Method measures.But the thickness of each of plural layers layer film is but difficult to be measured, especially, in film
The thickness of every thin film is just more under thickness is minimum and/or the similar situation of material properties of each layer film, in plural layers
It is difficult to be measured.
Summary of the invention
The application provides a kind of method and device for measuring deep hole wall films thickness, is deposited on deep hole side wall with distinguishing
Thickness is minimum and/or the similar plural layers of thin-film material property, realize the thickness for measuring every layer film in the plural layers,
To guarantee the purpose of the accuracy of every layer film thickness in film deposition process.
In a first aspect, in order to solve the above technical problems, the embodiment of the present application provides a kind of measurement deep hole wall films thickness
The method of degree, which comprises
Without being measured using Ellipsometric Spectrum Method to the deep hole before depositing any film in deep hole, with
The first actual spectrum is obtained, and measures the geometrical structure parameter of the deep hole according to first actual spectrum, wherein according to institute
Stating the first theoretical spectral that geometrical structure parameter is determined can be fitted with first actual spectrum；
The deep hole side wall surface deposit the first layer film after, using Ellipsometric Spectrum Method to the deep hole into
Row measurement to obtain the second actual spectrum, and measures according to second actual spectrum thickness of first layer film,
In, the second theoretical spectral determined according to the thickness of the geometrical structure parameter and first layer film and described second is in fact
Border spectrum can be fitted；
After the surface of first layer film deposits the second layer film, using Ellipsometric Spectrum Method to the deep hole
It measures, to obtain third actual spectrum, and measures according to the third actual spectrum thickness of second layer film,
In, determined according to the thickness of the geometrical structure parameter, the thickness of first layer film and second layer film
Three theoretical spectrals and the third actual spectrum can be fitted.
Optionally, the geometrical structure parameter for measuring the deep hole according to first actual spectrum includes:
The initial value of the geometrical structure parameter is set, first according to the calculation of initial value of the geometrical structure parameter
Initial theory spectrum；
The first initial theory spectrum and first actual spectrum are fitted, judge first initial theory
Whether spectrum and the degree of fitting of first actual spectrum exceed first threshold；
If the first initial theory spectrum and the degree of fitting of first actual spectrum exceed the first threshold, really
The initial value of the fixed geometrical structure parameter is the geometrical structure parameter, and the first initial theory spectrum is first reason
By spectrum；
If the degree of fitting of the first initial theory spectrum and first actual spectrum without departing from the first threshold,
The initial value for executing and the geometrical structure parameter being set then is returned to, the according to the calculation of initial value of the geometrical structure parameter
One initial theory spectrum.
Optionally, the thickness for measuring first layer film according to second actual spectrum includes:
The initial value of the thickness of first layer film is set, according to the calculation of initial value of the thickness of first layer film
The second initial theory spectrum；
The second initial theory spectrum and second actual spectrum are fitted, judge second initial theory
Whether spectrum and the degree of fitting of second actual spectrum exceed second threshold；
If the second initial theory spectrum and the degree of fitting of second actual spectrum exceed the second threshold, really
The initial value of the thickness of fixed first layer film is the thickness of first layer film, and the second initial theory spectrum is institute
State the second theoretical spectral；
If the degree of fitting of the second initial theory spectrum and second actual spectrum without departing from the second threshold,
The initial value for executing the thickness that first layer film is set then is returned to, according to the initial value meter of the thickness of first layer film
Calculate the second initial theory spectrum.
Optionally, the thickness for measuring second layer film according to second actual spectrum includes:
The initial value of the thickness of second layer film is set, according to the calculation of initial value of the thickness of second layer film
The third initial theory spectrum；
The third initial theory spectrum and the third actual spectrum are fitted, judge the third initial theory
Whether spectrum and the degree of fitting of the third actual spectrum exceed third threshold value；
If the third initial theory spectrum and the degree of fitting of the third actual spectrum exceed third threshold value, it is determined that institute
The initial value for stating the thickness of the second layer film is the thickness of second layer film, and the third initial theory spectrum is described the
Three theoretical spectrals；
If the degree of fitting of the third initial theory spectrum and the third actual spectrum without departing from third preset condition,
The initial value for executing the thickness that second layer film is set then is returned to, according to the initial value meter of the thickness of second layer film
Calculate the third initial theory spectrum.
Optionally, the thickness of the thickness of first layer film and second layer film be respectively less than/be equal to the 4th threshold value.
Optionally, the property of first layer film is similar with the property of second layer film.
Optionally, the method also includes:
After the surface of second layer film deposits third layer film, using Ellipsometric Spectrum Method to the deep hole
It measures, to obtain the 4th actual spectrum, and measures according to the 4th actual spectrum thickness of the third layer film,
In, according to the geometrical structure parameter, the thickness of first layer film, the thickness of second layer film and the third layer
The 4th theoretical spectral and the 4th actual spectrum that the thickness of film is determined can be fitted.
Optionally, the deep hole is the deep hole etched on three-dimensional storage.
Second aspect, in order to solve the above technical problems, the embodiment of the present application provides a kind of measurement deep hole wall films thickness
The device of degree, described device include:
First acquisition unit, before in deep hole without any film of deposition, using Ellipsometric Spectrum Method to institute
It states deep hole to measure, to obtain the first actual spectrum；
First measuring unit, for measuring the geometrical structure parameter of the deep hole according to first actual spectrum, wherein
The first theoretical spectral and first actual spectrum determined according to the geometrical structure parameter can be fitted；
Second acquisition unit, for the surface of the deep hole side wall deposit the first layer film after, using elliptical polarization
Spectroscopic methodology measures the deep hole, to obtain the second actual spectrum；
Second measuring unit, for measuring the thickness of first layer film according to second actual spectrum, wherein root
The second theoretical spectral determined according to the thickness of the geometrical structure parameter and first layer film and the described second practical light
Spectrum can be fitted；
Third acquiring unit, for after the surface of first layer film deposits the second layer film, using it is oval partially
Spectroscopy measures the deep hole, to obtain third actual spectrum；
Third measuring unit, for measuring the thickness of second layer film according to the third actual spectrum, wherein root
The third determined according to the thickness of the geometrical structure parameter, the thickness of first layer film and second layer film is theoretical
Spectrum and the third actual spectrum can be fitted.
Optionally, first measuring unit includes:
First setting unit, for the initial value of the geometrical structure parameter to be arranged, according to the geometrical structure parameter
First initial theory spectrum described in calculation of initial value；
First judging unit is sentenced for the first initial theory spectrum and first actual spectrum to be fitted
Whether the degree of fitting for the first initial theory spectrum and first actual spectrum of breaking exceeds first threshold；
First determination unit, if exceeding for the first initial theory spectrum and the degree of fitting of first actual spectrum
The first threshold, it is determined that the initial value of the geometrical structure parameter is the geometrical structure parameter, the described first initial reason
It is first theoretical spectral by spectrum；
First return unit, if not having for the first initial theory spectrum and the degree of fitting of first actual spectrum
Beyond the first threshold, then the first setting unit is returned.
Optionally, second measuring unit includes:
Second setting unit, the initial value of the thickness for first layer film to be arranged, according to first layer film
Thickness calculation of initial value described in the second initial theory spectrum；
Second judgment unit is sentenced for the second initial theory spectrum and second actual spectrum to be fitted
Whether the degree of fitting for the second initial theory spectrum and second actual spectrum of breaking exceeds second threshold；
Second determination unit, if exceeding for the second initial theory spectrum and the degree of fitting of second actual spectrum
The second threshold, it is determined that the initial value of the thickness of first layer film is the thickness of first layer film, described the
Two initial theory spectrum are second theoretical spectral；
Second return unit, if the degree of fitting of the second initial theory spectrum and second actual spectrum without departing from
The second threshold then returns to the second setting unit.
Optionally, the third measuring unit includes:
Third setting unit, the initial value of the thickness for second layer film to be arranged, according to second layer film
Thickness calculation of initial value described in third initial theory spectrum；
Third judging unit is sentenced for the third initial theory spectrum and the third actual spectrum to be fitted
Whether the degree of fitting for the third initial theory spectrum and the third actual spectrum of breaking exceeds third threshold value；
Third determination unit, if exceeding for the third initial theory spectrum and the degree of fitting of the third actual spectrum
Third threshold value, it is determined that the initial value of the thickness of second layer film is the thickness of second layer film, at the beginning of the third
Beginning theoretical spectral is the third theoretical spectral；
Third return unit, if the degree of fitting of the third initial theory spectrum and the third actual spectrum without departing from
Third preset condition then returns to third setting unit.
Optionally, the thickness of the thickness of first layer film and second layer film be respectively less than/be equal to the 4th threshold value.
Optionally, the property of first layer film is similar with the property of second layer film.
Optionally, described device further include:
4th acquiring unit, for after the surface of second layer film deposits third layer film, using it is oval partially
Spectroscopy measures the deep hole, to obtain the 4th actual spectrum；
4th measuring unit, for measuring the thickness of the third layer film according to the 4th actual spectrum, wherein root
According to the geometrical structure parameter, the thickness of first layer film, second layer film thickness and the third layer film
The 4th theoretical spectral determined of thickness and the 4th actual spectrum can be fitted.
Optionally, the deep hole is the deep hole etched on three-dimensional storage.
Compared with prior art, the embodiment of the present application has the advantage that
In the embodiment of the present application, every layer is calculated by the way of layer by layer deposition calculating to plural layers on deep hole side wall
The thickness of film, i.e., every deposition thin film just uses Ellipsometric Spectrum Method measurement to obtain primary practical light on deep hole side wall
Spectrum.For thin film any on deep hole side wall, after obtaining actual spectrum, deposit according to the actual spectrum and before
The thickness of every thin film and the geometrical structure parameter of deep hole before measuring when every thin film, can calculate this
The thickness of layer film.The method of the embodiment of the present application, can be in film deposition process, and layer by layer deposition calculates, to measure every layer
The thickness of film, so that the thickness of every layer film in plural layers on measurement deep hole side wall is realized, in film deposition process
Guarantee the accuracy purpose of every layer film thickness.
Detailed description of the invention
In order to illustrate the technical solutions in the embodiments of the present application or in the prior art more clearly, to embodiment or will show below
There is attached drawing needed in technical description to be briefly described, it should be apparent that, the accompanying drawings in the following description is only this
The some embodiments recorded in application, for those of ordinary skill in the art, without creative efforts,
It can also be obtained according to these attached drawings other attached drawings.
Fig. 1 is a kind of flow diagram of method for measuring deep hole wall films thickness provided by the embodiments of the present application；
Fig. 2 is the structural schematic diagram of three-dimensional storage provided by the embodiments of the present application；
Fig. 3 is a kind of exemplary diagram for obtaining the first actual spectrum provided by the embodiments of the present application；
Fig. 4 is the flow diagram of the geometrical structure parameter of the measurement deep hole provided by the embodiments of the present application；
Fig. 5 is the fit procedure example of the first initial theory spectrum provided by the embodiments of the present application and the first actual spectrum
Figure；
Fig. 6 is the flow diagram of the thickness of measurement first layer film provided by the embodiments of the present application；
Fig. 7 is the flow diagram of the thickness of measurement second layer film provided by the embodiments of the present application；
Fig. 8 be the embodiment of the present application deep hole wall films thickness measurement result and transmission electron microscope it is direct
The comparative graph of measurement result；
Fig. 9 is a kind of structural block diagram of device for measuring deep hole wall films thickness provided by the embodiments of the present application.
Specific embodiment
In order to enable those skilled in the art to better understand the solution of the present invention, below in conjunction in the embodiment of the present invention
Attached drawing, technical scheme in the embodiment of the invention is clearly and completely described, it is clear that described embodiment is only this
Invention a part of the embodiment, instead of all the embodiments.Based on the embodiments of the present invention, those of ordinary skill in the art exist
Every other embodiment obtained under the premise of creative work is not made, shall fall within the protection scope of the present invention.
Inventor it has been investigated that, the prior art once surveys deep hole before deep hole does not deposit any film
Amount, to obtain an actual spectrum, obtains the geometrical structure parameter of deep hole using the actual spectrum, deposits all layers in deep hole
Film and then to deep hole carry out one-shot measurement, obtain an actual spectrum, obtain the thickness of each layer film using the actual spectrum
Degree.
But on the one hand this method requires theoretical spectral that can respond to each assignment of every layer film thickness, i.e.,
When being every time every layer film thickness assignment difference, it is desirable that theoretical spectral can change, and on the other hand require to be that different layers are thin
When film assignment, the variation of theoretical spectral wants different, so as to the different instructions plural layers changed according to theoretical spectral,
And then obtain the corresponding thickness of every layer film.And for the plural layers in deep hole, when the thickness of film is minimum, each film
When thickness changes, change value also can be minimum, and when changing so as to cause the thickness of film, theoretical spectral will not become
Change, and is unable to measure the thickness of the film.Such as film thickness is 10nm, is every time variation with 1 the percent of the thickness of film
When amount is film thickness assignment, i.e., the thickness of each film changes 0.1nm, and the change value is minimum, and theoretical spectral will not be with thin
The change of film thickness and change, to be unable to measure the thickness of the film.When thin-film material property is similar, different layers are thin
When the thickness of film changes, the situation of change that theoretical spectral occurs is also similar, so that the variation of the theoretical spectral cannot be distinguished
Caused by being the thickness change of any layer film, so that the thickness of every layer film can not be obtained.Such as thin-film material is respectively SiO2
And SiN, since SiO2 with SiN property is similar, then when SiO2 film and SiN film change, the variation of theoretical spectral generation
Situation is also similar, therefore, it is impossible to be that the variation of SiO2 film causes by the variation that the theoretical spectral is distinguished in the variation of theoretical spectral
Or SiN film change caused by, so that the thickness of SiO2 film and SiN film can not be obtained respectively.
To solve the above-mentioned problems, the embodiment of the present application to plural layers in deep hole using layer by layer deposition calculating by the way of come
The thickness of every layer film is calculated, i.e., every deposition thin film just uses Ellipsometric Spectrum Method measurement to obtain one on deep hole side wall
Secondary actual spectrum.For thin film any on deep hole side wall, after obtaining actual spectrum, according to the actual spectrum and
The thickness of every thin film and the geometrical structure parameter of deep hole before measuring when depositing every thin film before, can be with
Calculate the thickness of the layer film.
With reference to the accompanying drawing, the various non-limiting embodiments of the application are described in detail.
Referring to Fig. 1, a kind of flow diagram of method for measuring deep hole wall films thickness, the method packet are shown
It includes:
S101, before no any film of deposition, the deep hole is surveyed using Ellipsometric Spectrum Method in deep hole
Amount to obtain the first actual spectrum, and measures according to first actual spectrum geometrical structure parameter of the deep hole, wherein
The first theoretical spectral and first actual spectrum determined according to the geometrical structure parameter can be fitted.
Wherein, the cross section of the deep hole can be different shape, such as can be circle, be also possible to ellipse
Deng.The shape of the cross section of deep hole is different, and the geometrical structure parameter is different.When the shape of the cross section of deep hole is round,
The geometrical structure parameter may include the height etc. of circular diameter, deep hole；When the shape of the cross section of deep hole is ellipse
When, the geometrical structure parameter may include elliptical major diameter, elliptical minor axis, height of deep hole etc..
The deep hole can be the deep hole etched on three-dimensional storage, and Fig. 2 shows the structural representations of three-dimensional storage
Scheme, a is the tomograph of three-dimensional storage in Fig. 2, and b is the top view of three-dimensional storage, and c is the section of three-dimensional storage
Figure.Wherein, three-dimensional storage may include tens layers even up to a hundred layers dielectric film stacking made of stepped construction 201, three
Dimension memory needs to etch deep hole 202, the cross section of the deep hole illustrated 202 in the stepped construction in a manufacturing process
Shape be circle, and only have several nanometers of film in deep hole side wall deposition multi-layered thickness, to be used to store charge.In Fig. 2 with
For three-layer thin-film, including the first layer film 203 deposited in surface of deep hole, the second layer deposited on the surface of the first layer film
Film 204 and the third layer film 205 deposited on the surface of the second layer film.
First actual spectrum can be the deep hole side wall reflection that deep hole collects after actual light source is irradiated
The spectrum of elliptically polarized light.Specifically, the deep hole is measured using Ellipsometric Spectrum Method, to obtain the first practical light
Spectrum may is that actual light source (such as white light) as incident light, and get to the specific position of deep hole side wall at an angle,
After the incident light is reflected by deep hole side wall, the polarization state of the incident light changes, and then, can be sent out according to the polarization state
The case where changing, generates the first actual spectrum.
It, can be with without before depositing any film in the deep hole of three-dimensional storage for example, for three-dimensional storage
Setting light source is beam of white light, take incident angle as the specific position of 65 degree of irradiation deep hole side walls, finally by spectra collection element
Collect first actual spectrum of the deep hole side wall after light source irradiation.
It should be noted that spectrum involved in the embodiment of the present application is two-dimensional spectroscopic ellipsometry, horizontal seat
It is designated as optical wavelength, ordinate is spectral signal intensity, the specific example that the first actual spectrum is obtained using Ellipsometric Spectrum Method
Scheme shown in Figure 3.Wherein, 301 be Ellipsometric Spectrum Method schematic diagram, and 302 be the first actual spectrum figure obtained.
Referring to fig. 4, the flow diagram for measuring the geometrical structure parameter of the deep hole is shown.Obtain the first actual spectrum
It afterwards, can be with according to the geometrical structure parameter that first actual spectrum measures the deep hole specifically:
The initial value of S401, the setting geometrical structure parameter, according to the calculation of initial value of geometrical structure parameter institute
State the first initial theory spectrum.
Can be based on Optical equations in the present embodiment: St1 (λ)=R (CDi, HTj) determines the first theoretical spectral, wherein λ
For optical wavelength, CDi, HTj indicate geometrical structure parameter, and i and j indicate multiple geometrical structure parameters.If the cross section of deep hole
Shape is circle, then CDi can indicate that the diameter of the cross section of deep hole, HTj can indicate the height of deep hole.The present embodiment can be with
Initial value is set for the geometrical structure parameter in the Optical equations, first when computational geometry structural parameters are the initial value is initial
Theoretical spectral.
S402, the first initial theory spectrum and first actual spectrum are fitted, are judged at the beginning of described first
Whether the degree of fitting of beginning theoretical spectral and first actual spectrum exceeds first threshold.
Wherein, the numerical value of the degree of fitting can be 0 to 1, wherein the numerical value of the degree of fitting is bigger, indicates this two light
Similarity degree between spectrum is higher, conversely, the numerical value of the degree of fitting is smaller, indicates that the similarity degree between this two spectrum is got over
It is low.For example, illustrate that this two spectrum similarity degrees are extremely low when the numerical value of the degree of fitting between two spectrum is 0, i.e., this two
Spectrum is entirely different；When the numerical value of the degree of fitting between two spectrum is 1, illustrate that this two spectrum similarity degrees are high, i.e.,
This two spectrum are almost the same.The threshold value can rule of thumb be preset.
If S403, the first initial theory spectrum and the degree of fitting of first actual spectrum exceed first threshold
Value, it is determined that the initial value of the geometrical structure parameter is the geometrical structure parameter, and the first initial theory spectrum is institute
The first theoretical spectral is stated, if the degree of fitting of the first initial theory spectrum and first actual spectrum is without departing from described the
One threshold value then returns and executes S401.
It, can when the first initial theory spectrum and the degree of fitting of first actual spectrum exceed the first threshold
To think that the first initial theory spectrum and the first actual spectrum are very close, it can think the geometrical structure parameter being arranged at this time
Initial value be deep hole geometrical structure parameter.
When the first initial theory spectrum and the degree of fitting of first actual spectrum are without departing from the first threshold
When, it is believed that the initial value for the geometrical structure parameter being arranged at this time is not the geometrical structure parameter of deep hole, is needed to reset
The initial value of geometrical structure parameter recalculates the first initial theory spectrum, until the first initial theory spectrum with it is described
The degree of fitting of first actual spectrum exceeds the first threshold.
By taking the first actual spectrum obtained in above-mentioned Fig. 3 as an example, the exemplary diagram of the fit procedure can with as shown in figure 5,
501 can indicate that the initial value of the geometrical structure parameter is arranged for the first time in Fig. 5, the first obtained initial theory spectrum and the
The fitted figure of one actual spectrum, as can be seen from the figure according to the of the calculation of initial value of the geometrical structure parameter of first time setting
One initial theory spectrum and the similarity of the first actual spectrum be not high；On the basis of 501,502 can indicate second of setting
It is initial to obtain corresponding with the initial value of geometrical structure parameter of second of setting first for the initial value of the geometrical structure parameter
The fitted figure of theoretical spectral and the first actual spectrum, the similarity of the two be not also high；On the basis of 502,503 can indicate
The initial value of the geometrical structure parameter is set three times, is obtained corresponding with the initial value of geometrical structure parameter of third time setting
The fitted figure of first theoretical spectral and the first actual spectrum, the curve 1. marked indicate the first initial theory spectrum, 2. mark
Curve indicates the first practical collection spectrum.501 to 503 as can be seen that with being constantly the geometrical structure parameter from figure
Initial value is set, corresponding first initial theory spectrum moves closer to the first actual spectrum, in 503 first initial theory spectrum with
First actual spectrum is almost consistent, and the first initial theory spectrum at this time can be determined as to the first theoretical spectral, and described first
The initial value of the corresponding geometrical structure parameter of theoretical spectral is geometrical structure parameter to be measured.
S102, the deep hole surface deposit the first layer film after, using Ellipsometric Spectrum Method to the deep hole
It measures, to obtain the second actual spectrum, and measures according to second actual spectrum thickness of first layer film,
In, the second theoretical spectral determined according to the thickness of the geometrical structure parameter and first layer film and described second is in fact
Border spectrum can be fitted.
After the surface of the deep hole side wall deposits the first layer film, deep hole side wall is measured using Ellipsometric Spectrum Method
The second actual spectrum is collected in identical position in upper and S101.
Referring to Fig. 6, the flow diagram for measuring the thickness of first layer film is shown.Obtain the second actual spectrum
It afterwards, can be with according to the thickness that second actual spectrum measures first layer film specifically:
S601, setting first layer film thickness initial value, according to the initial of the thickness of first layer film
Value calculates the second initial theory spectrum.
Due in addition to the geometrical structure parameter, also wrapping after the surface of the deep hole side wall deposits the first layer film
The thickness of the first layer film is included, therefore, the second reason can be determined according to the thickness of the geometrical structure parameter and the first layer film
By spectrum, such as can be based on Optical equations: St2 (λ)=R (CDi, HTj, D1) determines the second theoretical spectral, compared to S401
In Optical equations, the thickness D1 of the first layer film is increased in this step as the parameter for determining the second theoretical spectral.Due to
The deposition of film does not have an impact the geometrical structure parameter of deep hole, then, can when the same location of deep hole side wall measures
The geometrical structure parameter measured in S401 as the known parameters in St2 (λ)=R (CDi, HTj, D1), need to only be set
The initial value of the thickness D1 of the first layer film is set, to calculate the second initial theory spectrum, until the second initial theory spectrum
Until degree of fitting with the second actual spectrum is more than second threshold.
S602, the second initial theory spectrum and second actual spectrum are fitted, are judged at the beginning of described second
Whether the degree of fitting of beginning theoretical spectral and second actual spectrum exceeds second threshold.
If S603, the second initial theory spectrum and the degree of fitting of second actual spectrum exceed second threshold
Value, it is determined that the initial value of the thickness of first layer film is the thickness of first layer film, second initial theory
Spectrum is second theoretical spectral, if the second initial theory spectrum and the degree of fitting of second actual spectrum do not surpass
The second threshold out then returns and executes S601.
It, can when the second initial theory spectrum and the degree of fitting of second actual spectrum exceed the second threshold
To think that the second initial theory spectrum and the second actual spectrum are very close, it can think the first layer film being arranged at this time
The initial value of thickness is the thickness of the first layer film.
When the second initial theory spectrum and the degree of fitting of second actual spectrum are without departing from the second threshold
When, it is believed that the initial value of the thickness for the first layer film being arranged at this time is not the thickness of first layer film, is needed again
The initial value of the thickness of first layer film is set, the second initial theory spectrum is recalculated, until the second initial theory light
The degree of fitting of spectrum and second actual spectrum exceeds the second threshold.
S103, first layer film surface deposit the second layer film after, using Ellipsometric Spectrum Method to institute
It states deep hole to measure, to obtain third actual spectrum, and second layer film is measured according to the third actual spectrum
Thickness, wherein determined according to the thickness of the geometrical structure parameter, the thickness of first layer film and second layer film
Third theoretical spectral and the third actual spectrum out can be fitted.
After the surface of first layer film deposits the second layer film, deep hole side is measured using Ellipsometric Spectrum Method
With identical position in S101 and S102 on wall, third actual spectrum is collected.
Referring to Fig. 7, the flow diagram for measuring the thickness of second layer film is shown.Obtain third actual spectrum
It afterwards, can be with according to the thickness that the third actual spectrum measures second layer film specifically:
S701, setting second layer film thickness initial value, according to the initial of the thickness of second layer film
Value calculates the third initial theory spectrum.
Due to the surface of the deep hole side wall deposit the second layer film after, in addition to the geometrical structure parameter and first
The thickness of layer film further includes the thickness of the second layer film, therefore, can be according to the geometrical structure parameter, the first layer film
Thickness and the thickness of the second layer film determine third theoretical spectral, such as can be based on Optical equations: St2 (λ)=R (CDi,
HTj, D1, D2) determine third theoretical spectral, compared to the Optical equations in S601, the second layer film is increased in this step
Thickness D2 is as the parameter for determining third theoretical spectral.Since the deposition of film does not generate shadow to the geometrical structure parameter of deep hole
It rings, then it, can be by the geometrical structure parameter measured in S601 and first when the same location of deep hole side wall measures
The thickness of the second layer film need to be only arranged as the known parameters in St2 (λ)=R (CDi, HTj, D1, D2) in the thickness of layer film
The initial value of D2, it is quasi- until third initial theory spectrum and third actual spectrum to calculate the third initial theory spectrum
It is right be more than third threshold value until.
S702, the third initial theory spectrum and the third actual spectrum are fitted, at the beginning of judging the third
Whether the degree of fitting of beginning theoretical spectral and the third actual spectrum exceeds third threshold value.
If S703, the third initial theory spectrum and the degree of fitting of the third actual spectrum exceed third threshold value,
The initial value for determining the thickness of second layer film is the thickness of second layer film, and the third initial theory spectrum is
The third theoretical spectral, if the third initial theory spectrum and the degree of fitting of the third actual spectrum are without departing from third
Preset condition then returns and executes S701.
It, can when the third initial theory spectrum and the degree of fitting of the third actual spectrum exceed the third threshold value
To think that third initial theory spectrum and third actual spectrum are very close, it can think the second layer film being arranged at this time
The initial value of thickness is the thickness of the second layer film.
When the third initial theory spectrum and the degree of fitting of the third actual spectrum are without departing from the third threshold value
When, it is believed that the initial value of the thickness for the second layer film being arranged at this time is not the thickness of second layer film, is needed again
The initial value of the thickness of second layer film is set, third initial theory spectrum is recalculated, until the third initial theory light
The degree of fitting of spectrum and the third actual spectrum exceeds the third threshold value.
In the embodiment of the present application, every layer is calculated by the way of layer by layer deposition calculating to plural layers on deep hole side wall
The thickness of film, i.e., every deposition thin film just uses Ellipsometric Spectrum Method measurement to obtain primary practical light on deep hole side wall
Spectrum.For thin film any on deep hole side wall, after obtaining actual spectrum, deposit according to the actual spectrum and before
The thickness of every thin film and the geometrical structure parameter of deep hole before measuring when every thin film, can calculate this
The thickness of layer film.The method of the embodiment of the present invention, can be in film deposition process, and layer by layer deposition calculates, to measure every layer
The thickness of film, so that the thickness of every layer film in plural layers on measurement deep hole side wall is realized, in film deposition process
Guarantee the accuracy purpose of every layer film thickness.
It in the present embodiment, can also be according in addition to depositing first layer film and the second layer film on deep hole side wall
The secondary other layer films of deposition, such as deposit third layer film on the surface of second layer film, then the method can also wrap
It includes: after the surface of second layer film deposits third layer film, the deep hole being carried out using Ellipsometric Spectrum Method
Measurement to obtain the 4th actual spectrum, and measures according to the 4th actual spectrum thickness of the third layer film, wherein
It is thin according to the geometrical structure parameter, the thickness of first layer film, the thickness of second layer film and the third layer
The 4th theoretical spectral and the 4th actual spectrum that the thickness of film is determined can be fitted.
Method in the present embodiment can measure on deep hole side wall in plural layers in the case where the thickness of film is minimum
The thickness of first layer film of the thickness of every thin film, i.e. deep hole sidewall surfaces deposition deposits on the surface of the first layer film
The second layer film thickness and the second layer film surface deposit third layer film thickness be smaller than/be equal to the 4th
Threshold value, the 4th threshold value for example can be 100nm.
Method in the present embodiment can measure more on deep hole side wall in the similar situation of material properties of each layer film
The thickness of every thin film in layer film, such as the refractive index of the first layer film and the second layer film are very close, can be
The absolute value of the specific refractivity of thin film and the second layer film is less than/it is equal to the 5th threshold value, the 5th threshold value can be
It is rule of thumb preset.
Thickness and use using every thin film in plural layers on the deep hole side wall of the method measurement in the present embodiment
The direct measurement result of transmission electron microscope can achieve the high goodness of fit, referring to Fig. 8, show each layer of the present embodiment
The comparative graph of the measurement result of the thickness of film and the direct measurement result using transmission electron microscope.In fig. 8,
(a) it indicates the thickness measurement of first layer film of the present embodiment and uses the direct measurement result of transmission electron microscope
Comparison curves, wherein abscissa indicates that the thickness measurement of first layer film of the present embodiment, ordinate are indicated using transmission
The direct measurement result of electron microscope；(b) thickness measurement of second layer film of the present embodiment is indicated and using transmission
The comparison curves of the direct measurement result of electron microscope, wherein abscissa indicates the thickness of second layer film of the present embodiment
Measurement result, ordinate indicate to use the direct measurement result of transmission electron microscope；(c) indicate that the third layer of the present embodiment is thin
The comparison curves of the thickness measurement of film and the direct measurement result using transmission electron microscope, wherein abscissa indicates
The thickness measurement of the third layer film of the present embodiment, ordinate indicate the directly measurement knot using transmission electron microscope
Fruit.
The measurement result of the thickness of each layer film of the present embodiment and the direct measurement result for using transmission electron microscope
When being compared, it can determine by comparing the goodness of fit of the two on the deep hole side wall using the method measurement in the present embodiment
The accuracy of the thickness of every thin film in plural layers.For example, can with the degree of correlation R2 between two groups of measurement results come
Indicate both the goodness of fit, wherein R2=1 represent it is perfectly correlated, R2=0 represent completely it is uncorrelated；Also it can use this implementation
The curve equation Y of the measurement result of the thickness of each layer film of example and the direct measurement result fitting using transmission electron microscope
Coefficient a in=aX+b is come the goodness of fit both indicated, and a is closer to 1, and the range for representing two groups of measurement results is closer, and a is got over
Far from 1, the range difference for representing two groups of measurement results is remoter.B represents the difference between two groups of measurement results, if a=1, b=
0, then illustrate that two groups of measurement results are identical, R2 is also equal to 1 at this time.According to the thickness of each layer film of above-mentioned the present embodiment
The determination method of measurement result and the direct measurement result goodness of fit using transmission electron microscope, as can be seen from Figure 8,
(a) Y=1.0086X+2.3681 in, coefficient 1.0086 are in close proximity to 1, R2=0.9373, are also very close in 1, it is seen that this
The thickness measurement of first layer film of embodiment with using the direct measurement result of transmission electron microscope can achieve pole
The high goodness of fit, and so on, thickness measurement and the use transmission electron microscope of second layer film of the present embodiment
Direct measurement result can achieve the high goodness of fit, and the thickness measurement of the third layer film of the present embodiment and use transmit
The direct measurement result of electron microscope can achieve the high goodness of fit.It can be seen that being surveyed using the method in the present embodiment
The thickness of every thin film is reached with using the direct measurement result of transmission electron microscope in plural layers on the deep hole side wall of amount
To the high goodness of fit, the method tool provided in this embodiment for measuring the thickness of every thin film in plural layers on deep hole side wall
There are high accuracy and feasibility.
Method based on a kind of measurement deep hole wall films thickness that above embodiments provide, the embodiment of the present application also provide
Its working principle is described in detail with reference to the accompanying drawing in a kind of device measuring deep hole wall films thickness.
Referring to Fig. 9, which is a kind of structure of device for measuring deep hole wall films thickness provided by the embodiments of the present application
Block diagram.
It is provided in this embodiment it is a kind of measure deep hole wall films thickness device include:
First acquisition unit 901, before in deep hole without any film of deposition, using Ellipsometric Spectrum Method pair
The deep hole measures, to obtain the first actual spectrum；
First measuring unit 902, for measuring the geometrical structure parameter of the deep hole according to first actual spectrum,
In, the first theoretical spectral and first actual spectrum determined according to the geometrical structure parameter can be fitted；
Second acquisition unit 903, for after the surface of the deep hole side wall deposits the first layer film, using it is oval partially
Spectroscopy measures the deep hole, to obtain the second actual spectrum；
Second measuring unit 904, for measuring the thickness of first layer film according to second actual spectrum,
In, the second theoretical spectral determined according to the thickness of the geometrical structure parameter and first layer film and described second is in fact
Border spectrum can be fitted；
Third acquiring unit 905, for the surface of first layer film deposit the second layer film after, using ellipse
Polarisation spectrometry measures the deep hole, to obtain third actual spectrum；
Third measuring unit 906, for measuring the thickness of second layer film according to the third actual spectrum,
In, determined according to the thickness of the geometrical structure parameter, the thickness of first layer film and second layer film
Three theoretical spectrals and the third actual spectrum can be fitted.
Optionally, first measuring unit 902 includes:
First setting unit, for the initial value of the geometrical structure parameter to be arranged, according to the geometrical structure parameter
First initial theory spectrum described in calculation of initial value；
First judging unit is sentenced for the first initial theory spectrum and first actual spectrum to be fitted
Whether the degree of fitting for the first initial theory spectrum and first actual spectrum of breaking exceeds first threshold；
First determination unit, if exceeding for the first initial theory spectrum and the degree of fitting of first actual spectrum
The first threshold, it is determined that the initial value of the geometrical structure parameter is the geometrical structure parameter, the described first initial reason
It is first theoretical spectral by spectrum；
First return unit, if not having for the first initial theory spectrum and the degree of fitting of first actual spectrum
Beyond the first threshold, then the first setting unit is returned.
Optionally, second measuring unit 904 includes:
Second setting unit, the initial value of the thickness for first layer film to be arranged, according to first layer film
Thickness calculation of initial value described in the second initial theory spectrum；
Second judgment unit is sentenced for the second initial theory spectrum and second actual spectrum to be fitted
Whether the degree of fitting for the second initial theory spectrum and second actual spectrum of breaking exceeds second threshold；
Second determination unit, if exceeding for the second initial theory spectrum and the degree of fitting of second actual spectrum
The second threshold, it is determined that the initial value of the thickness of first layer film is the thickness of first layer film, described the
Two initial theory spectrum are second theoretical spectral；
Second return unit, if the degree of fitting of the second initial theory spectrum and second actual spectrum without departing from
The second threshold then returns to the second setting unit.
Optionally, the third measuring unit 906 includes:
Third setting unit, the initial value of the thickness for second layer film to be arranged, according to second layer film
Thickness calculation of initial value described in third initial theory spectrum；
Third judging unit is sentenced for the third initial theory spectrum and the third actual spectrum to be fitted
Whether the degree of fitting for the third initial theory spectrum and the third actual spectrum of breaking exceeds third threshold value；
Third determination unit, if exceeding for the third initial theory spectrum and the degree of fitting of the third actual spectrum
Third threshold value, it is determined that the initial value of the thickness of second layer film is the thickness of second layer film, at the beginning of the third
Beginning theoretical spectral is the third theoretical spectral；
Third return unit, if the degree of fitting of the third initial theory spectrum and the third actual spectrum without departing from
Third preset condition then returns to third setting unit.
Optionally, the thickness of the thickness of first layer film and second layer film be respectively less than/be equal to the 4th threshold value.
Optionally, the property of first layer film is similar with the property of second layer film.
Optionally, described device further include:
4th acquiring unit, for after the surface of second layer film deposits third layer film, using it is oval partially
Spectroscopy measures the deep hole, to obtain the 4th actual spectrum；
4th measuring unit, for measuring the thickness of the third layer film according to the 4th actual spectrum, wherein root
According to the geometrical structure parameter, the thickness of first layer film, second layer film thickness and the third layer film
The 4th theoretical spectral determined of thickness and the 4th actual spectrum can be fitted.
Optionally, the deep hole is the deep hole etched on three-dimensional storage.
In the embodiment of the present application, every layer is calculated by the way of layer by layer deposition calculating to plural layers on deep hole side wall
The thickness of film, i.e., every deposition thin film just uses Ellipsometric Spectrum Method measurement to obtain primary practical light on deep hole side wall
Spectrum.For thin film any on deep hole side wall, after obtaining actual spectrum, deposit according to the actual spectrum and before
The thickness of every thin film and the geometrical structure parameter of deep hole before measuring when every thin film, can calculate this
The thickness of layer film.The method of the embodiment of the present application, can be in film deposition process, and layer by layer deposition calculates, to measure every layer
The thickness of film, so that the thickness of every layer film in plural layers on measurement deep hole side wall is realized, in film deposition process
Guarantee the accuracy purpose of every layer film thickness.
When introducing the element of various embodiments of the application, the article " one ", "one", " this " and " described " be intended to
Indicate one or more elements.Word "include", "comprise" and " having " are all inclusive and mean in addition to listing
Except element, there can also be other elements.
It should be noted that those of ordinary skill in the art will appreciate that realizing the whole in above method embodiment or portion
Split flow is relevant hardware can be instructed to complete by computer program, and the program can be stored in a computer
In read/write memory medium, the program is when being executed, it may include such as the process of above-mentioned each method embodiment.Wherein, the storage
Medium can be magnetic disk, CD, read-only memory (Read-Only Memory, ROM) or random access memory (Random
Access Memory, RAM) etc..
All the embodiments in this specification are described in a progressive manner, same and similar portion between each embodiment
Dividing may refer to each other, and each embodiment focuses on the differences from other embodiments.Especially for device reality
For applying example, since it is substantially similar to the method embodiment, so describing fairly simple, related place is referring to embodiment of the method
Part explanation.The apparatus embodiments described above are merely exemplary, wherein described be used as separate part description
Unit and module may or may not be physically separated.Furthermore it is also possible to select it according to the actual needs
In some or all of unit and module achieve the purpose of the solution of this embodiment.Those of ordinary skill in the art are not paying
In the case where creative work, it can understand and implement.
The above is only the specific embodiment of the application, it is noted that for the ordinary skill people of the art
For member, under the premise of not departing from the application principle, several improvements and modifications can also be made, these improvements and modifications are also answered
It is considered as the protection scope of the application.
Claims (10)
1. a kind of method for measuring deep hole wall films thickness, which is characterized in that the described method includes:
Without being measured using Ellipsometric Spectrum Method to the deep hole before depositing any film in deep hole, to obtain
First actual spectrum, and measure according to first actual spectrum geometrical structure parameter of the deep hole, wherein according to described several
The first theoretical spectral and first actual spectrum what structural parameters is determined can be fitted；
After the surface of the deep hole side wall deposits the first layer film, the deep hole is surveyed using Ellipsometric Spectrum Method
Amount to obtain the second actual spectrum, and measures according to second actual spectrum thickness of first layer film, wherein root
The second theoretical spectral determined according to the thickness of the geometrical structure parameter and first layer film and the described second practical light
Spectrum can be fitted；
After the surface of first layer film deposits the second layer film, the deep hole is carried out using Ellipsometric Spectrum Method
Measurement to obtain third actual spectrum, and measures according to the third actual spectrum thickness of second layer film, wherein
The third reason determined according to the thickness of the geometrical structure parameter, the thickness of first layer film and second layer film
It can be fitted by spectrum and the third actual spectrum.
2. the method according to claim 1, wherein described measure the deep hole according to first actual spectrum
Geometrical structure parameter include:
The initial value of the geometrical structure parameter is set, according to the first initial theory of calculation of initial value of the geometrical structure parameter
Spectrum；
The first initial theory spectrum and first actual spectrum are fitted, judge the first initial theory spectrum
Whether exceed first threshold with the degree of fitting of first actual spectrum；
If the first initial theory spectrum and the degree of fitting of first actual spectrum exceed the first threshold, it is determined that institute
The initial value for stating geometrical structure parameter is the geometrical structure parameter, and the first initial theory spectrum is first theoretical light
Spectrum；
If the first initial theory spectrum and the degree of fitting of first actual spectrum are returned without departing from the first threshold
The initial value of the geometrical structure parameter is arranged in receipt row, at the beginning of first according to the calculation of initial value of the geometrical structure parameter
Beginning theoretical spectral.
3. according to the method described in claim 2, it is characterized in that, described according to second actual spectrum measurement described first
The thickness of layer film includes:
The initial value of the thickness of first layer film is set, according to the calculation of initial value second of the thickness of first layer film
Initial theory spectrum；
The second initial theory spectrum and second actual spectrum are fitted, judge the second initial theory spectrum
Whether exceed second threshold with the degree of fitting of second actual spectrum；
If the second initial theory spectrum and the degree of fitting of second actual spectrum exceed the second threshold, it is determined that institute
The initial value for stating the thickness of the first layer film is the thickness of first layer film, and the second initial theory spectrum is described the
Two theoretical spectrals；
If the second initial theory spectrum and the degree of fitting of second actual spectrum are returned without departing from the second threshold
The initial value of the thickness of first layer film is arranged in receipt row, according to the calculation of initial value institute of the thickness of first layer film
State the second initial theory spectrum.
4. according to the method described in claim 3, it is characterized in that, described according to second actual spectrum measurement described second
The thickness of layer film includes:
The initial value of the thickness of second layer film is set, according to the calculation of initial value third of the thickness of second layer film
Initial theory spectrum；
The third initial theory spectrum and the third actual spectrum are fitted, judge the third initial theory spectrum
Whether exceed third threshold value with the degree of fitting of the third actual spectrum；
If the degree of fitting of the third initial theory spectrum and the third actual spectrum exceeds third threshold value, it is determined that described the
The initial value of the thickness of two-layer film is the thickness of second layer film, and the third initial theory spectrum is third reason
By spectrum；
If the third initial theory spectrum and the degree of fitting of the third actual spectrum are returned without departing from third preset condition
The initial value of the thickness of second layer film is arranged in receipt row, according to the calculation of initial value institute of the thickness of second layer film
State third initial theory spectrum.
5. the method according to claim 1, wherein the thickness of first layer film and second layer film
Thickness be respectively less than/be equal to the 4th threshold value.
6. the method according to claim 1, wherein the property of first layer film and second layer film
Property it is similar.
7. the method according to claim 1, wherein the method also includes:
After the surface of second layer film deposits third layer film, the deep hole is carried out using Ellipsometric Spectrum Method
Measurement to obtain the 4th actual spectrum, and measures according to the 4th actual spectrum thickness of the third layer film, wherein
It is thin according to the geometrical structure parameter, the thickness of first layer film, the thickness of second layer film and the third layer
The 4th theoretical spectral and the 4th actual spectrum that the thickness of film is determined can be fitted.
8. according to claim 1 to method described in 7 any one, which is characterized in that the deep hole is to carve on three-dimensional storage
Lose deep hole out.
9. a kind of device for measuring deep hole wall films thickness, which is characterized in that described device includes:
First acquisition unit, before in deep hole without any film of deposition, using Ellipsometric Spectrum Method to the depth
Hole measures, to obtain the first actual spectrum；
First measuring unit, for measuring the geometrical structure parameter of the deep hole according to first actual spectrum, wherein according to
The first theoretical spectral and first actual spectrum that the geometrical structure parameter is determined can be fitted；
Second acquisition unit, for the surface of the deep hole side wall deposit the first layer film after, using spectroscopic ellipsometry
Method measures the deep hole, to obtain the second actual spectrum；
Second measuring unit, for measuring the thickness of first layer film according to second actual spectrum, wherein according to institute
State the second theoretical spectral that the thickness of geometrical structure parameter and first layer film is determined is with second actual spectrum
It can be fitted；
Third acquiring unit, for the surface of first layer film deposit the second layer film after, using elliptically polarized light
Spectrometry measures the deep hole, to obtain third actual spectrum；
Third measuring unit, for measuring the thickness of second layer film according to the third actual spectrum, wherein according to institute
State the third theoretical spectral that the thickness of geometrical structure parameter, the thickness of first layer film and second layer film is determined
It can be fitted with the third actual spectrum.
10. device according to claim 9, which is characterized in that described device further include:
4th acquiring unit, for the surface of second layer film deposit third layer film after, using elliptically polarized light
Spectrometry measures the deep hole, to obtain the 4th actual spectrum；
4th measuring unit, for measuring the thickness of the third layer film according to the 4th actual spectrum, wherein according to institute
State the thickness of geometrical structure parameter, the thickness of first layer film, the thickness of second layer film and the third layer film
Spending the 4th theoretical spectral determined and the 4th actual spectrum can be fitted.
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| CN113091626B (en) * | 2021-03-29 | 2023-11-03 | 长鑫存储技术有限公司 | Method for measuring film thickness of semiconductor device |
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