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CN107565976A - New latch for parallel-serial conversion - Google Patents

New latch for parallel-serial conversion Download PDF

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Publication number
CN107565976A
CN107565976A CN201710685655.0A CN201710685655A CN107565976A CN 107565976 A CN107565976 A CN 107565976A CN 201710685655 A CN201710685655 A CN 201710685655A CN 107565976 A CN107565976 A CN 107565976A
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CN
China
Prior art keywords
node
meets
connects
source electrode
grid
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Pending
Application number
CN201710685655.0A
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Chinese (zh)
Inventor
高静
周游
徐江涛
史再峰
高志远
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Tianjin University
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Tianjin University
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Priority to CN201710685655.0A priority Critical patent/CN107565976A/en
Publication of CN107565976A publication Critical patent/CN107565976A/en
Pending legal-status Critical Current

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Abstract

The present invention relates to integrated circuit fields, to propose a kind of new circuit structure, it is possible to achieve the function of multiplexing and data storage, in the case where completing same parallel data and being converted into serial data, cost of the circuit on area can be reduced.The technical solution adopted by the present invention is that, for the new latch of parallel-serial conversion, by two resistance R1, R2, six PMOSs M1, M2, M3, M4, M5 and M6, three NMOS tubes M7, M8, M9 and a current source I composition, annexation are as follows:The speed of current source goes out ground connection, and input meets node A;NMOS tube M7 grid meets P0, and source electrode connects node A drain electrodes and connects node B, Substrate ground;NMOS tube M8 grid meets P1, and source electrode meets node A, and drain electrode connects node D, Substrate ground;NMOS tube M9 grid meets clock CLK.Present invention is mainly applied to IC design occasions that manufacture.

Description

New latch for parallel-serial conversion
Technical field
The present invention relates to the serial port circuit design of integrated circuit fields, more particularly to parallel-serial conversion.Concretely relate to be used for The new latch of parallel-serial conversion.
Background technology
One traditional trigger only has the function of data storage, it is impossible to is done directly the multiplexing of data, can typically distinguish The multiplexing of data is completed with the multiplexer of current mode logic (CML), depositing for data is completed with current mode logic (CML) latch Storage.So traditional parallel-to-serial converter structure uses a part of the trigger as sequence circuit, it will uses more door To realize the multiplexing of data, it will circuit area is had larger consumption.In serial port circuit, parallel-serial conversion is by low speed Parallel data is converted into the serial data of high speed.Multiplexer (MUX) is the pith of parallel-to-serial converter, but big A large amount of traditional flip-flops (FF) are applied in most parallel-to-serial converters to realize the multiple function of multichannel and data storage function, institute The trigger used with traditional parallel-to-serial converter adds the cost of circuit area.
The content of the invention
For overcome the deficiencies in the prior art, the present invention is directed to propose a kind of new circuit structure, it is possible to achieve multiplexing With the function of data storage, in the case where completing same parallel data and being converted into serial data, circuit can be reduced in area On cost.The technical solution adopted by the present invention is, for the new latch of parallel-serial conversion, by two resistance R1, R2, and six PMOS M1, M2, M3, M4, M5 and M6, three NMOS tubes M7, M8, M9 and a current source I composition, annexation are as follows:Electricity The speed in stream source goes out ground connection, and input meets node A;NMOS tube M7 grid meets P0, and source electrode connects node A drain electrodes and meets node B, and substrate connects Ground;NMOS tube M8 grid meets P1, and source electrode meets node A, and drain electrode connects node D, Substrate ground;NMOS tube M9 grid connects clock CLK, source electrode meet node A, and drain electrode connects node C, Substrate ground;PMOS M1 grid meets IN0, and source electrode meets node F, and drain electrode connects section Point B, substrate connect power supply;PMOS M2 grid meets IN0, and source electrode connects node, and drain electrode meets node B, and substrate connects power supply;PMOS M3 Grid meet IN1, source electrode meets node F, and drain electrode connects node, and substrate connects power supply;PMOS M4 grid meets IN1, and source electrode connects node E, drain electrode meet node D, and substrate connects power supply;PMOS M5 grid connects PMOS M6 source electrode, and source electrode meets node F, and drain electrode connects section Point C, substrate connect power supply;M6 grid connects PMOS M5 source electrode, and source electrode meets node E, and drain electrode meets node C, and substrate connects power supply;Electricity Resistance R1 end 1 connects power supply, and end 2 meets node F;Resistance R2 end 1 connects power supply, and end 2 meets node E;Node E and F are as output;Three Control signal CLK, P0, P1 are used to maintaining and selecting input signal, and CLK frequency is the duty of P0 and P1 twice of clock signal Than being 20% for 50%, P0 and P1 dutycycle, input signal IN0 and IN1 are selected for respectively.
No matter selection signal P0 and P1 level height, now circuit is for storing when clock CLK is low level The logic level IN0 and IN1 of input;When clock CLK is high level, if selection signal P0 be if high level P1 is low level Circuit output IN0 data, if selection signal P1 be data that IN1 is exported if high level P0 is low level.
The features of the present invention and beneficial effect are:
The circuit structure of the proposition of the present invention, can be used for high speed parallel-serial conversion.Used respectively compared to conventional circuit structure Multiplexer and latch realize that multidiameter delay data are converted to serial data all the way, and the present invention realizes that parallel-serial conversion can be at one Clock cycle realizes the multiplexing and storage of data, so as to greatly save the number of transistors needed for circuit realiration so that chip The cost of area reduces.
Brief description of the drawings:
Fig. 1 present invention proposes the circuit structure for integrating multiplexer and latch.
Timing diagram when Fig. 2 circuit structures proposed by the present invention are run.
4 to 1 parallel-to-serial converter that the circuit structure that Fig. 3 is proposed is realized.
Embodiment
The present invention combine traditional current-mode multiplexer and latch its while propose a kind of achievable data storage The circuit structure of data-reusing is completed, a kind of circuit structure proposed by the present invention is as shown in figure.It is proposed by the present invention to realize number According to the circuit structure of multiplexing and storage by two resistance R1, R2, six PMOSs M1, M2, M3, M4, M5 and M6, three NMOS tubes M7, M8, M9 and a current source I composition.The annexation of each component is as follows:The speed of current source goes out ground connection, and input connects node A;NMOS tube M7 grid meets P0, and source electrode connects node A drain electrodes and connects node B, Substrate ground;NMOS tube M8 grid connects P1, source electrode Node A is met, drain electrode connects node D, Substrate ground;NMOS tube M9 grid meets CLK, and source electrode meets node A, and drain electrode connects node C, substrate Ground connection;PMOS M1 grid meets IN0, and source electrode meets node F, and drain electrode meets node B, and substrate connects power supply;PMOS M2 grid connects IN0, source electrode connect node, and drain electrode meets node B, and substrate connects power supply;PMOS M3 grid meets IN1, and source electrode meets node F, and drain electrode connects Node, substrate connect power supply;PMOS M4 grid meets IN1, and source electrode meets node E, and drain electrode meets node D, and substrate connects power supply;PMOS M5 grid connects PMOS M6 source electrode, and source electrode meets node F, and drain electrode meets node C, and substrate connects power supply;M6 grid connects PMOS M5 source electrode, source electrode meet node E, and drain electrode meets node C, and substrate connects power supply;Resistance R1 end 1 connects power supply, and end 2 meets node F;Resistance R2 end 1 connects power supply, and end 2 meets node E;Node E and F are as output.
The operation logic of circuit structure proposed by the present invention is as follows, is divided into transmission IN0, maintains IN0, transmit IN1, maintains The steps of IN1 tetra-, the sequential that its function is realized is as shown in Figure 2.Three control signals CLK, P0, P1 are used to maintain and select input to believe Number.CLK frequency is that the dutycycle that the dutycycle of P0 and P1 twice of clock signal is 50%, P0 and P1 is 20%, for dividing Input signal IN0 and IN1 are not selected.
Specific function is embodied as:When clock CLK be it is low level when no matter selection signal P0 and P1 level height, Now circuit is used for the logic level IN0 and IN1 for storing input;When clock CLK is high level, if selection signal P0 is height Level P1 is low level then circuit output IN0 data, is to export IN1's if high level P0 is low level if selection signal P1 Data.To prevent that circuit from being simultaneously high level when the state of selection for selection signal.The state of function is completed from circuit As can be seen that function of half of the clock cycle of circuit structure proposed as multiplexer, half of clock cycle is data storage work( Energy.In a word, the circuit structure of proposition can substitute multiplexer and complete the function of latching.
To become apparent from the object, technical solutions and advantages of the present invention, implementation of the present invention is provided below in conjunction with example. Traditional 4 to 1 parallel-serial conversion structure needs three latch (L), three 2 to 1 and go here and there and turn (M) and three triggers (FF). Such as figure three is all, realizes 4 to 1 same parallel-serial conversion using the circuit structure of the present invention, it is thus only necessary to three latch (L) With the circuit structure (ML) for being three propositions.Circuit structure proposed by the present invention, which is can be seen that, from the quantity using door is realizing 4 To 1 parallel-serial conversion when, it is instead of traditional 2 to 1 with ML and go here and there shifting circuit (M) and trigger (FF), realize multichannel and answer With the function of being latched with data.There it can be seen that can when completing identical data-reusing using structure proposed by the present invention To reduce the use number of gate circuit, reduce so that the area of circuit is spent.

Claims (2)

1. a kind of new latch for parallel-serial conversion, it is characterized in that, by two resistance R1, R2, six PMOS M1, M2, M3, M4, M5 and M6, three NMOS tubes M7, M8, M9 and a current source I composition, annexation are as follows:The speed of current source goes out to connect Ground, input meet node A;NMOS tube M7 grid meets P0, and source electrode connects node A drain electrodes and connects node B, Substrate ground;NMOS tube M8's Grid meets P1, and source electrode meets node A, and drain electrode connects node D, Substrate ground;NMOS tube M9 grid meets clock CLK, and source electrode connects node A, drain electrode connect node C, Substrate ground;PMOS M1 grid meets IN0, and source electrode meets node F, and drain electrode meets node B, and substrate connects electricity Source;PMOS M2 grid meets IN0, and source electrode connects node, and drain electrode meets node B, and substrate connects power supply;PMOS M3 grid meets IN1, Source electrode meets node F, and drain electrode connects node, and substrate connects power supply;PMOS M4 grid meets IN1, and source electrode meets node E, and drain electrode connects node D, substrate connect power supply;PMOS M5 grid connects PMOS M6 source electrode, and source electrode meets node F, and drain electrode meets node C, and substrate connects electricity Source;M6 grid connects PMOS M5 source electrode, and source electrode meets node E, and drain electrode meets node C, and substrate connects power supply;Resistance R1 end 1 connects Power supply, end 2 meet node F;Resistance R2 end 1 connects power supply, and end 2 meets node E;Node E and F are as output;Three control signals CLK, P0, P1 are used to maintaining and selecting input signal, and CLK frequency is that the dutycycle of P0 and P1 twice of clock signal is 50%, P0 and P1 dutycycle are 20%, and input signal IN0 and IN1 are selected for respectively.
2. it is used for the new latch of parallel-serial conversion as claimed in claim 1, it is characterized in that, when clock CLK is low level When no matter selection signal P0 and P1 level height, now circuit be used for store input logic level IN0 and IN1;At that time When clock CLK is high level, if the data that selection signal P0 is circuit output IN0 if high level P1 is low level, if selection Signal P1 is that high level P0 is the data that low level then exports IN1.
CN201710685655.0A 2017-08-11 2017-08-11 New latch for parallel-serial conversion Pending CN107565976A (en)

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Application Number Priority Date Filing Date Title
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Application Number Priority Date Filing Date Title
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Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN111900991A (en) * 2020-08-11 2020-11-06 中国科学院微电子研究所 Dynamic reset double-edge switch driving circuit and method suitable for ultra-high-speed DAC

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7006021B1 (en) * 2003-06-27 2006-02-28 Cypress Semiconductor Corp. Low power serializer circuit and method
CN103490748A (en) * 2013-06-21 2014-01-01 北京大学深圳研究生院 Latch circuit unit and data driving circuit for display device
CN104682967A (en) * 2015-01-30 2015-06-03 陈普锋 GaAs logical unit based on differential structure and serial-parallel conversion circuit thereof
US20150312060A1 (en) * 2014-04-23 2015-10-29 Lsi Corporation Decision feedback equalization slicer with enhanced latch sensitivity

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7006021B1 (en) * 2003-06-27 2006-02-28 Cypress Semiconductor Corp. Low power serializer circuit and method
CN103490748A (en) * 2013-06-21 2014-01-01 北京大学深圳研究生院 Latch circuit unit and data driving circuit for display device
US20150312060A1 (en) * 2014-04-23 2015-10-29 Lsi Corporation Decision feedback equalization slicer with enhanced latch sensitivity
CN104682967A (en) * 2015-01-30 2015-06-03 陈普锋 GaAs logical unit based on differential structure and serial-parallel conversion circuit thereof

Non-Patent Citations (1)

* Cited by examiner, † Cited by third party
Title
TSAI,W.等: "A novel low gate-count serializer topology with Multiplexer-Flip-Flops", 《2012 IEEE INTERNATIONAL SYMPOSIUM ON CIRCUITS AND SYSTEMS (ISCAS)》 *

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN111900991A (en) * 2020-08-11 2020-11-06 中国科学院微电子研究所 Dynamic reset double-edge switch driving circuit and method suitable for ultra-high-speed DAC
CN111900991B (en) * 2020-08-11 2022-11-29 中国科学院微电子研究所 Dynamic reset double-edge switch driving circuit and method suitable for ultra-high-speed DAC

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