CN107527654B - Nonvolatile semiconductor memory device and method for driving word line thereof - Google Patents
Nonvolatile semiconductor memory device and method for driving word line thereof Download PDFInfo
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- CN107527654B CN107527654B CN201710238959.2A CN201710238959A CN107527654B CN 107527654 B CN107527654 B CN 107527654B CN 201710238959 A CN201710238959 A CN 201710238959A CN 107527654 B CN107527654 B CN 107527654B
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- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
- G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
- G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
- G11C11/401—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells
- G11C11/4063—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing
- G11C11/407—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing for memory cells of the field-effect type
- G11C11/408—Address circuits
- G11C11/4085—Word line control circuits, e.g. word line drivers, - boosters, - pull-up, - pull-down, - precharge
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- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C16/00—Erasable programmable read-only memories
- G11C16/02—Erasable programmable read-only memories electrically programmable
- G11C16/04—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS
- G11C16/0483—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS comprising cells having several storage transistors connected in series
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- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C16/00—Erasable programmable read-only memories
- G11C16/02—Erasable programmable read-only memories electrically programmable
- G11C16/06—Auxiliary circuits, e.g. for writing into memory
- G11C16/30—Power supply circuits
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- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
- G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
- G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
- G11C11/401—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells
- G11C11/4063—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing
- G11C11/407—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing for memory cells of the field-effect type
- G11C11/4074—Power supply or voltage generation circuits, e.g. bias voltage generators, substrate voltage generators, back-up power, power control circuits
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- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
- G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
- G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
- G11C11/401—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells
- G11C11/4063—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing
- G11C11/407—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing for memory cells of the field-effect type
- G11C11/408—Address circuits
- G11C11/4082—Address Buffers; level conversion circuits
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- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
- G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
- G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
- G11C11/401—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells
- G11C11/4063—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing
- G11C11/407—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing for memory cells of the field-effect type
- G11C11/409—Read-write [R-W] circuits
- G11C11/4099—Dummy cell treatment; Reference voltage generators
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- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/56—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using storage elements with more than two stable states represented by steps, e.g. of voltage, current, phase, frequency
- G11C11/5621—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using storage elements with more than two stable states represented by steps, e.g. of voltage, current, phase, frequency using charge storage in a floating gate
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- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C16/00—Erasable programmable read-only memories
- G11C16/02—Erasable programmable read-only memories electrically programmable
- G11C16/06—Auxiliary circuits, e.g. for writing into memory
- G11C16/08—Address circuits; Decoders; Word-line control circuits
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- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C5/00—Details of stores covered by group G11C11/00
- G11C5/14—Power supply arrangements, e.g. power down, chip selection or deselection, layout of wirings or power grids, or multiple supply levels
- G11C5/145—Applications of charge pumps; Boosted voltage circuits; Clamp circuits therefor
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- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C8/00—Arrangements for selecting an address in a digital store
- G11C8/08—Word line control circuits, e.g. drivers, boosters, pull-up circuits, pull-down circuits, precharging circuits, for word lines
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- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C8/00—Arrangements for selecting an address in a digital store
- G11C8/10—Decoders
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- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C8/00—Arrangements for selecting an address in a digital store
- G11C8/14—Word line organisation; Word line lay-out
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Abstract
The invention provides a nonvolatile semiconductor memory device and a method for driving a word line thereof. The flash memory of the present invention includes: a memory cell array including a plurality of blocks; and a block selection unit (200) for selecting a block of the memory cell array on the basis of the column address information. The block selection unit (200) includes: a block select transistor (230) connected to each word line of the block; a level shifter (210) for supplying a voltage to a node (N2) connected to each gate of the block selection transistor (230); a boosting circuit (220) that boosts the potential of the node (N2); and a voltage supply unit for supplying an operating voltage to one terminal of the block selection transistor. The node (N2) is boosted by the 1 st voltage by the operating voltage from the voltage supply unit, and then boosted by the 2 nd voltage by the voltage boosting circuit (220).
Description
Technical Field
The present invention relates to a word line (word line) driving method for a nonvolatile semiconductor memory device such as a flash memory (flash memory).
Background
In a NAND (NAND) type or NOR (NOR) type flash memory, a high voltage is required for reading, programming, and erasing data. In general, in a flash memory, a low power supply voltage is supplied from the outside, the supplied voltage is boosted by a charge pump (charge pump), and a program voltage or an erase voltage is generated using the boosted voltage. If the word line decoder (word line decoder) includes a charge pump, the word line decoder becomes large due to the dedicated area of the capacitor. Therefore, patent document 1 discloses a word line decoder which omits a charge pump and reduces a layout (layout) area. The word line decoder suppresses a drop in a word line driving voltage by self-boosting (self boost) a word line enable signal for enabling a word line.
[ Prior art documents ]
[ patent document ]
[ patent document 1] Japanese patent laid-open No. 2002-197882 publication
[ problems to be solved by the invention ]
Reading or programming in flash memory is typically done in units of pages (pages). The word line selection circuit selects a block from the memory cell array by decoding a row address, and selects a word line within the selected block. Fig. 1 shows a block selecting operation of the word line selecting circuit. The voltage Vpp boosted by the charge pump circuit 10 is supplied to a level shifter (level shifter)20, and the level shifter 20 outputs an output signal BDRV in response to a block selection signal BLKSEL which is a decoding result of a row address. The output signal BDRV of the level shifter 20 is commonly connected to the gates (gates) of the block selection transistors 30, and the block selection transistors 30 supply the voltage supplied from the voltage supply section 40 to the word lines WL0 to WL31 and the selection gate lines SGD and SGS of the selection block 50 in response to the output signal BDRV.
For example, in the programming operation, the voltage supply unit 40 supplies an intermediate voltage (e.g., 10V) to each word line of the selected block, supplies a programming voltage (e.g., 25V) to the selected word line, supplies an intermediate voltage (e.g., 10V) to the unselected word line, supplies a driving voltage (e.g., Vcc voltage or 5V) to the selected gate line SGD, and supplies 0V to the selected gate line SGS. Then, a potential corresponding to data "0" or "1" is supplied to the bit line GBL through a page buffer (pagebuffer)/read circuit. On the other hand, the level shifter 20 must supply the output signal BDRV having a voltage higher than the program voltage (for example, 31V) so as not to decrease the program voltage, in consideration of the voltage drop of the threshold amount of the block selection transistor 30 and the back gate bias effect from the source (source) when the block selection transistor 30 is turned on. Therefore, the charge pump circuit 10 must generate the boosted voltage Vpp of at least 31V.
In order to generate a high voltage (e.g., 31V) by the charge pump circuit 10, the number of stages of the charge pump must be increased. In particular, if the external power supply to the memory chip is low, the number of stages increases accordingly. However, if the number of stages of the charge pump circuit 10 increases, the boosting efficiency decreases, and therefore, there arise problems of an increase in power consumption and an increase in the occupied area of the charge pump circuit 10.
Disclosure of Invention
The present invention has been made to solve the above conventional problems, and an object of the present invention is to provide a nonvolatile semiconductor memory device which can save space and power.
[ means for solving problems ]
A nonvolatile semiconductor memory device of the present invention includes: a memory cell array including a plurality of blocks; and a block selection unit selecting a block of the memory cell array based on the row address information, the block selection unit including: a plurality of selection transistors connected to each word line of the block; a 1 st circuit that charges a connection node connected to each gate of the plurality of selection transistors; a 2 nd circuit connected to the 1 st circuit and boosting a voltage of the connection node; and a supply unit configured to supply an operating voltage to one of the terminals of the plurality of selection transistors, wherein the connection node is configured to perform 1 st voltage boosting by the operating voltage supplied by the supply unit and then perform 2 nd voltage boosting by the 2 nd circuit.
Preferably, the 2 nd circuit includes a capacitor connected to the connection node, and the 2 nd circuit supplies the voltage output from the 1 st circuit to the capacitor. Preferably, the 2 nd circuit includes a 1 st transistor connected to the 1 st circuit, and when the 1 st transistor is turned on, the voltage output from the 1 st circuit is supplied to the capacitor via the 1 st transistor. Preferably, the 2 nd circuit includes a 2 nd transistor connected to the 1 st circuit, and when the 2 nd transistor is turned on, the voltage output from the 1 st circuit is charged to the connection node via the 2 nd transistor. Preferably, the 1 st circuit includes a level shifter that outputs the 1 st voltage based on the high voltage supplied from the charge pump circuit. Preferably, the memory cell array includes m rows × n columns of blocks (m and n are integers of 2 or more), and the 1 st circuit is shared by the blocks in one row. Preferably, the plurality of blocks each include a 2 nd circuit. Preferably, the operating voltage at the time of the 1 st boosting is an intermediate voltage for enabling conduction of the nand string. Preferably, the supply unit supplies a program voltage to the selected word line after the supply of the intermediate voltage, the program voltage being supplied to the selected word line via a selection transistor that performs 2 nd boosting.
The method for driving word lines in a nonvolatile semiconductor memory device according to the present invention includes the steps of: in response to row address information, a 1 st voltage is charged to each gate of a plurality of block selection transistors for selecting a block of a memory cell array, an operation voltage required for each word line is supplied to one terminal of the plurality of block selection transistors, so that the 1 st voltage of each gate is boosted to a 2 nd voltage, and a voltage is supplied to a capacitor connected to each gate, so that the 2 nd voltage is boosted to a 3 rd voltage via the capacitor.
Preferably, the voltage supplied to the capacitor is the 1 st voltage. Preferably, the operating voltage is an intermediate voltage for enabling conduction of the nand string. Preferably, the 1 st voltage is charged by a level shifter to which a high voltage is supplied from a charge pump circuit, and the 2 nd voltage is boosted to the 3 rd voltage by a booster circuit using a voltage output from the level shifter.
[ Effect of the invention ]
According to the present invention, since the gate voltage of the selection transistor connected to the word line is boosted in two stages, the voltage for charging the gate of the selection transistor can be reduced. As a result, the high voltage generated by the booster circuit such as a charge pump can be made smaller than that of the conventional one, and the area dedicated to the booster circuit and the power consumption can be reduced.
Drawings
Fig. 1 is a diagram illustrating an operation of a conventional word line selection circuit.
Fig. 2 is a diagram showing the structure of a flash memory according to embodiment 1 of the present invention.
Fig. 3 is a circuit diagram showing the structure of the nand string of the memory cell array according to embodiment 1 of the present invention.
Fig. 4 is a diagram showing the configuration of a word line selection circuit according to embodiment 1 of the present invention.
Fig. 5 is a waveform diagram illustrating the operation of the word line selection circuit according to embodiment 1 of the present invention.
Fig. 6 is a layout diagram showing the relationship between blocks and a block selection unit in the memory cell array according to embodiment 1 of the present invention.
Fig. 7 is a layout diagram showing the relationship between the blocks and the level shifters of the memory cell array according to embodiment 2 of the present invention.
Fig. 8 is a diagram illustrating a method of driving word lines of a selected block according to embodiment 2 of the present invention.
Description of the reference numerals
10: charge pump circuit
20. 210, 210_0 to 210_ 127: level shifter
30: block select transistor
40. 300, and (2) 300: voltage supply unit
50: selecting a block
100: flash memory
110: memory cell array
120: input/output buffer
130: address register
140: control unit
150: word line selection circuit
160: page buffer/read-out circuit
170: column selection circuit
180: internal voltage generating circuit
200. 200_0 to 200_ 1023: block selecting part
220. 220_0, 220_ 7: voltage booster circuit
230. 230_0, 230_ 7: block select transistor
Ax: line address information
Ay: column address information
BDRV: output signal
BLK (0), BLK (1), …, BLK (m-1): memory block
BLKSEL: block select signal
bst, N1, N2, N3, N4: node point
C1, C2: capacitive coupling
Cb: capacitor with a capacitor element
GBL0, GBL1, GBLn-1, GBLn: bit line
G _ SGD, G _ WL 31-G _ WL0, G _ SGS: global signal line
MC 0-MC 31: memory cell
NU: NAND string unit
PASSVOLT, PASSVOUT: voltage of
PSV, Vpp: high voltage
Q1, Q2, Q3, Q4: transistor with a metal gate electrode
SGD, SGS: select gate line
SL: shared source line
t 1-t 8: time of day
TD, TS: selection transistor
Vers: erase voltage
Vpass: passing voltage
Vpgm: write voltage (programming voltage)
Vread: sensing pass voltage
Vth: threshold value
WL, WL 0-WL 31: word line
XB,/XB, XB 0-XB 7: local boost signal
XT,/XT, XT 0-XT 7: local clamp signal
Detailed Description
Hereinafter, embodiments of the present invention will be described in detail with reference to the drawings. In a preferred embodiment, the present invention is implemented in a flash memory.
[ examples ]
Fig. 2 shows the structure of a flash memory according to embodiment 1 of the present invention. As shown in fig. 2, the flash memory 100 includes: a memory cell array 110 in which a plurality of memory cells are arranged in a matrix; an input/output buffer 120 connected to an external input/output terminal I/O, and holding input/output data; an address register (address register)130 that receives address data (address data) from the input/output buffer 120; a control unit 140 for receiving command data from the input/output buffer 120 or control signals from the outside and controlling the respective units; a word line selection circuit 150 that receives the row address information Ax from the address register 130 and selects a block, a word line, and the like based on a decoding result of the row address information Ax; a page buffer/read circuit 160 holding data read from the page selected by the word line selection circuit 150 or holding write data to the selected page; a column selection circuit 170 that receives column address information Ay from the address register 130, and selects data in the page buffer/read circuit 160 based on a decoding result of the column address information Ay; and an internal voltage generation circuit 180 that generates various voltages (a write voltage Vpgm, a pass voltage Vpass, a read pass voltage Vread, an erase voltage Vers, and the like) necessary for reading, programming, erasing, and the like of data.
The memory cell array 110 has m memory blocks BLK (0), BLK (1), …, BLK (m-1) arranged in the column direction. The page buffer/readout circuit 160 is disposed near the block BLK (0). In the 1 memory block, for example, as shown in fig. 3, a plurality of nand string cells NU are formed by connecting a plurality of memory cells in series, and in the 1 memory block, n +1 nand string cells NU are arranged in the row direction. The nand string unit NU includes: the memory cell includes a plurality of memory cells MCi (i is 0, 1, …, and 31) connected in series, a bit line side selection transistor TD connected to the drain (drain) side of the memory cell MC31 at one end, and a source line side selection transistor TS connected to the source side of the memory cell MC0 at the other end, the drain of the bit line side selection transistor TD being connected to the corresponding 1 bit line GBL, and the source of the selection transistor TS being connected to a common source line SL. Fig. 3 shows a typical cell, but the cell may be one containing 1 or more dummy cells (dummy cells) in the nand string, or may be a three-dimensional structure.
Memory cells typically have a Metal Oxide Semiconductor (MOS) structure that includes: a source/drain as an N-type diffusion region formed in the P-well; a tunneling oxide film formed on a channel between a source and a drain; a floating gate (charge storage layer) formed on the tunnel oxide film; and a control gate formed on the floating gate through the dielectric film. The memory Cell may be a Single Level Cell (SLC) type that stores one bit (binary data) or a Multi-Level Cell (MLC) type that stores a plurality of bits.
The control gates of the memory cells MCi are connected to a word line WLi, and the gates of the select transistors TD and TS are connected to select gate lines SGD and SGS parallel to the word line WL. When selecting a block based on the row address information Ax, the word line selection circuit 150 selectively drives the selection transistors TD and TS through the selection gate lines SGS and SGD of the block and selectively drives the selected word line and the unselected word line through the word lines WL0 to WL31 in response to a read operation, a program operation, an erase operation, and the like.
In the flash memory 100, during a read operation, a positive voltage is applied to the bit lines, a voltage (e.g., 0V) is applied to the selected word line, a pass voltage Vpass (e.g., 4.5V) is applied to the unselected word lines, a positive voltage (e.g., 4.5V) is applied to the select gate lines SGD and SGS, the bit line side select transistor TD and the source line side select transistor TS are turned on, and 0V is applied to the common source line. In the programming (writing) operation, a high-voltage programming voltage Vpgm (15V to 25V) is applied to the selected word line, an intermediate potential (for example, 10V) is applied to the unselected word line, the bit line side selection transistor TD is turned on, the source line side selection transistor TS is turned off, and a potential corresponding to data "0" or "1" is supplied to the bit line GBL. In the erase operation, 0V is applied to a selected word line in a block, a high voltage (for example, 20V) is applied to a P-well, and electrons of a floating gate are extracted to a substrate, whereby data is erased in units of blocks.
Next, details of the word line selection circuit 150 of the present embodiment will be described with reference to fig. 4. The word line selection circuit 150 includes a block selection section 200 that selects a block of the memory cell array 110. The block selection unit 200 selects a block based on the decoding result of the row address information Ax, and drives a word line of the selected block. In embodiment 1, 1 block selecting unit 200 is prepared for 1 block. For example, when the memory cell array 110 has 1028 blocks in the column direction, 1028 block selection units 200 are prepared.
The block selection part 200 includes a level shifter 210, and the level shifter 210 inputs the high voltage Vpp boosted by the charge pump circuit and outputs the voltage PSV to the node N1 according to a block selection signal BLKSEL. That is, the level shifter 210 outputs the voltage PSV when the block selection signal BLKSEL is at the H level and does not output the voltage PSV when the block selection signal BLKSEL is at the L level in response to the block selection signal BLKSEL, which is the decoding result of the row address. Further, although the level shifter 210 is supplied with the high voltage Vpp from a charge pump circuit, not shown, the charge pump circuit of the present embodiment preferably supplies a high voltage Vpp of, for example, 25V, which is lower than the high voltage Vpp (for example, 31V) of the charge pump circuit 10 shown in the conventional fig. 1, to the level shifter 210.
The block selection unit 200 further includes a boosting circuit 220, and the boosting circuit 220 is used for boosting the voltage PASSVOLT at the node N2 connected to the gate of the block selection transistor 230. The booster circuit 220 includes four NMOS transistors Q1, Q2, Q3, and Q4 having high withstand voltage, and a capacitor Cb for boosting. The transistor Q1 is connected between the node N1 and the node N2 connected to the level shifter 210, and a local clamp (local clamp) signal XT is supplied to the gate thereof. The transistor Q2 is connected between the node N2 and GND, and its gate is supplied with an inverted signal (/ XT) of the local clamp signal XT. When the transistor Q1 is turned on and the transistor Q2 is turned off, the high voltage PSV at the node N1 is charged to the node N2 through the transistor Q1. On the other hand, when the transistor Q1 is turned off and the transistor Q2 is turned on, the charge at the node N2 is discharged to GND via the transistor Q2.
The transistor Q3 is connected between the node N1 and the node bst, and a gate thereof is supplied with the local boost signal XB. The transistor Q4 is connected between the nodes bst and GND, and a signal (/ XB) for inverting the local boost signal XB is supplied to the gate thereof. When the transistor Q3 is turned on and the transistor Q4 is turned off, the high voltage PSV of the node N1 is applied to the node bst. On the other hand, when the transistor Q3 is turned off and the transistor Q4 is turned on, the charge at the node bst is discharged to GND via the transistor Q4. The capacitor Cb is connected between the node bst and the node N2, and capacitively couples the node bst to the node N2. The size of the capacitor Cb is appropriately selected according to the load of the block selection transistor driven through the node N2, a required voltage, and the like.
The boosting circuit 220 preferably operates when the drive of the selected word line requires a high voltage. For example, during the programming operation, the local clamp signals XT and/XT and the local boost signals XB and/XB are selectively driven, and the voltage passvoll at the node N2 is boosted by the capacitor Cb so as not to decrease the operating voltage supplied to the selected word line by the block selection transistor 230. Preferably, when the local clamp signals XT,/XT and the local boost signals XB,/XB are driven to the H level, their voltage levels may be the same level as the voltage PSV.
Node N2 of the boost circuit 220 is connected to the gate of the block select transistor 230. Although only 1 block selection transistor 230 is illustrated in fig. 4, one terminal (source electrode) of each block selection transistor is actually connected to the word lines WL0 to WL31 of the nand string in the block, the select gate lines SGD and SGS via the node N3, as illustrated in fig. 1. The other terminal (drain electrode) of the block selection transistor 230 is connected to a voltage supply unit (see fig. 1) that supplies operating voltages for programming, reading, erasing, and the like via a node N4. These block selection transistors 230 include NMOS transistors of high withstand voltage.
Next, the operation of the block selecting unit 200 according to the present embodiment will be described with reference to fig. 5. At time t1, local clamp signal XT is at L level,/XT is at H level, transistor Q1 is turned off, transistor Q2 is turned on, and node N2 is electrically connected to GND via transistor Q2. Then, the local boost signal XB is at the L level,/XB is at the H level, the transistor Q3 is turned off, the transistor Q4 is turned on, and the node bst is electrically connected to the GND level.
At time t2, block selection unit 200 drives local clamp signal XT to H level and/XT to L level. Thereby, the transistor Q1 is turned on, the transistor Q2 is turned off, and the node N2 is blocked from GND.
At time t3, the block selection signal BLKSEL shifts to the H level. In response to this, the level shifter 210 outputs a voltage PSV (e.g., 25V) to the node N1 based on the high voltage Vpp from the charge pump circuit. Since the transistor Q1 is in an on state, the node N2 is charged by the voltage PSV, and the voltage passvoll becomes the PSV-Vth level (Vth is the threshold of the transistor Q1). In this way, the voltage PASSVOLT is supplied to each gate of the block selection transistor 230, the block selection transistor 230 is turned on, and the block is selected. The operation at time t3 may precede the operation at time t 2.
At time t4, the voltage supply section supplies an intermediate voltage (e.g., 10V) to the block selection transistor 230 via the node N4 for all word lines of the selected block. At this time, in all the block selection transistors 230 to which the intermediate voltage is supplied, the voltage PASSVOLT is self-boosted by the gate-drain capacitive coupling C1. Further, when the block select transistor 230 is turned on, the voltage passvoll is further self-boosted by the gate/source capacitive coupling C2. Self-boosting is performed by all the block select transistors 230, thereby supplying all the word lines of the selected block with an intermediate voltage whose voltage drop is suppressed.
At time t5, the block selection unit 200 drives the local boost signal XB to H level and/XB to L level. Thereby, the transistor Q3 is turned on, the transistor Q4 is turned off, and the voltage PSV of the node N1 is applied to the node bst via the transistor Q3. The node bst rises from the GND level to the PSV-Vth level (Vth is the threshold of the transistor Q3). The voltage across one of the electrodes of capacitor Cb, node bst, rises, so that the voltage PASSVOLT at the other electrode of capacitor Cb, node N2, is boosted by the capacitive coupling of capacitor Cb. Thus, the gate voltage PASSVOLT of the self-boosted block select transistor 230 is further boosted (e.g., 31V).
Next, at time t6, the voltage supply section supplies a program voltage (e.g., 25V) to the selected word line. At this time, the gate voltage PASSVOLT of the block select transistor 230 has been boosted high above the program voltage, and thus the program voltage is applied to the selected word line by the block select transistor 230 without a voltage drop.
Next, at time t7, the supply of the program voltage (selected word line) and the intermediate voltage (unselected word line) from the voltage supply unit is stopped, the potential of the voltage passvoll gradually decreases, and at time t8, the block selection signal BLKSEL, the local clamp signal XT, and the local boost signal XB are driven to the L level.
As described above, according to the present embodiment, the voltage PASSVOLT applied to the gate of the block selection transistor 230 is boosted in two stages, and therefore, the target voltage PASSVOLT (the selected word line voltage + Vt of the block selection transistor + the back gate bias < PASSVOLT) can be generated without adding the number of stages of the charge pump circuit. Therefore, the number of stages can be reduced as compared with a conventional charge pump circuit, and the layout area and the current consumption can be reduced.
In the present embodiment, the transistor Q1 is interposed between the node N1 and the node N2, so that the source of the transistor Q1 is at the voltage PSV and the gate is at the XT (XT ═ PSV), and the source and the gate are at the same potential, so that the transistor Q1 is in the off state (cut off), and even if the voltage passvoll is further increased, the voltage is not leaked (leak) through the transistor Q1 and clamped.
In the above embodiment, the voltage PASSVOLT is boosted by charging the voltage PSV to the node bst once, but the voltage PASSVOLT is not limited to this, and the voltage PASSVOLT may be intermittently boosted by charging a plurality of times. At this time, by supplying a plurality of pulses with the local boost signals XB and/XB, the transistors Q3 and Q4 are switched a plurality of times to repeat charging and discharging of the node bst (GND, PSV-Vth, GND, PSV-Vth), and the voltage boost of the voltage pasvout is repeated a plurality of times, whereby a larger boost voltage can be obtained. Further, by such a plurality of times of boosting, even if the boosted voltage drops due to leakage of the capacitor Cb during a long-time operation, the battery can be recharged.
Further, the voltage PASSVOLT may be monitored, compared with a desired target voltage, and the local boosting signals XB,/XB may be applied to the transistors Q3, Q4 based on the comparison result to boost. That is, if the voltage PASSVOLT is smaller than the target voltage, boosting is performed by the local boosting signals XB,/XB, and if the voltage PASSVOLT is equal to or larger than the target voltage, boosting may not be performed.
Also, the capacitor Cb connected to the node N2 may preferably be formed of a MOS capacitor. Since the parasitic capacitance of the booster circuit 220 may be an obstacle to high-speed operation when the parasitic capacitance is increased by the capacitor Cb, a diode or a transistor (which is turned on at the time of boosting) may be connected between the capacitor Cb and the node N2, for example, so that the capacitance of the capacitor Cb is not seen from the node N2 side.
Further, in the above embodiment, the source of the transistor Q4 is connected to GND, but if the source is at GND level, the leakage of the transistor Q4 becomes large, so that an inverter (inverter) may be connected between the transistor Q4 and GND, and a local boost signal/XB may be supplied to the input terminal of the inverter, or the source of the transistor Q4 may be connected to a voltage such as Vcc or the local boost signal XB. At this time, the latter (directly connecting the local boost signal XB) can obtain a greater effect. Similarly to the transistor Q2, an inverter may be connected between the transistor Q2 and GND, and a local clamp signal/XT may be supplied to an input terminal of the inverter, or a source of the transistor Q2 may be connected to a voltage such as Vcc or a local clamp signal XT.
Next, embodiment 2 of the present invention will be explained. The block selection part 200 shown in fig. 4 may be arranged corresponding to each block of the blocks of the memory cell array. For example, as shown in fig. 6, when 1024 blocks _0 to _1023 are arranged in the row direction, 1024 block selection units 200_0 to 200_1023 are arranged in the row direction. When such a layout is adopted, the block selecting section 200 includes level shifters 210 as shown in fig. 4, and thus 1024 level shifters 210 are arranged.
Since the level shifter 210 outputs the high voltage Vpp output from the charge pump circuit in response to the block selection signal BLKSEL of the Vcc voltage level, a depletion type NMOS transistor having a high withstand voltage and a low threshold is used to reduce a potential difference between the two. The depletion transistor requires a long channel length and thus a large area. As shown in fig. 6, when 1024 level shifters are arranged, the occupied area becomes large, which may hinder the miniaturization of the memory chip. Therefore, in embodiment 2, the block selection portion can be shared by several blocks.
Fig. 7 is a diagram showing an example of the arrangement of the block selecting unit according to embodiment 2 of the present invention. As shown in fig. 7, when there are 1024 blocks, the blocks are arranged in the horizontal direction 8 × the vertical direction 128, and 1 level shifter is shared by 8 blocks in the horizontal direction. That is, the voltage PSV is supplied to the selected 8 blocks in the horizontal direction by any one of the level shifters 210_0 to 210_ 127. Further, any one of the 8 blocks in the horizontal direction is selected by decoding 8 local clamp signals XT0 to XT7(/ XT0 to/XT 7) and 8 local boost signals XB0 to XB7(/ XB0 to/XB 7). For example, block 0 is selected when the local clamp signal XT0 and the local boost signal XB0 are selected, and block 5 out of 8 blocks in the horizontal direction is selected when the local clamp signal XT5 and the local boost signal XB5 are selected.
Fig. 8 shows details of a block selecting unit for selecting 8 blocks arranged in the horizontal direction. When 8 blocks in the horizontal direction are selected based on row address information, 1 level shifter 210 common to the 8 blocks outputs a voltage PSV in common to the boosting circuits 220_7 to 220_0 of each block in response to an H-level block selection signal BLKSEL. The boosting circuits 220_7 to 220_0 are selectively operated by the corresponding local clamp signal XT and local boost signal XB as described above. Furthermore, the output voltages PASSVLT of the voltage boosting circuits 220_7 to 220_0 are respectively outputted to the corresponding block selection transistors 230_7 to 230_ 0. The voltage supply unit 300 outputs global (global) signal lines G _ SGD, G _ WL31 to G _ WL0, and G _ SGS to the block selection transistors 230_7 to 230_0, respectively. That is, it should be noted that the voltage supply unit 300 outputs the global signal lines (8 × G _ SGD, 8 × G _ WL31 to 8 × G _ WL0, 8 × G _ SGS in this example) corresponding to the number of 8 blocks.
For example, assume that level shifter 210_1 is selected and block _0 in the horizontal direction is programmed. The local clamp signal XT0 shifts to H level, the voltage boost circuit 220_0 becomes conductive, and the level shifter 210 outputs the voltage PSV to the voltage boost circuits 220_7 to 220_0 in response to the block selection signal BLKSEL. Since the transistor Q1 of the voltage boost circuit 220_0 is turned on, the voltage PSV is introduced into the voltage boost circuit 220_0, and the voltage pasvout is precharged to PSV-Vth by the voltage PSV. On the other hand, since the transistors Q1 of the voltage boosting circuits 220_7 to 220_1 are turned off, the voltage PSV is not introduced into the voltage boosting circuits.
Next, the voltage supply unit 300 supplies the required operation voltage to the global word line G _ WL. That is, the voltage supply unit 300 supplies a program voltage to the selected word line and supplies an intermediate voltage to the unselected word line. At this time, the voltage PASSVOLT of the node N2 of the boosting circuit 220_0 is charged to PSV-Vth, the gate of the block selection transistor 230_0 is self-boosted by supplying the program voltage, and the block selection transistor 230_0 is turned on by the boosted gate voltage. On the other hand, the voltage PASSVLT of the voltage boosting circuits 220_7 to 220_1 is 0V, so the block selecting transistors 230_7 to 230_1 are turned off.
Subsequently, when the local boost signal XB0 is set to active (assert), the node bst of the boost circuit 220_0 rises from the GND level to the PSV-Vth level, and the node N2 is boosted via the capacitor Cb. That is, the voltage passvoll is boosted to the operating voltage + Vth + back-gate bias or more after the voltage boost in two stages.
As described above, in the present embodiment, even when a depletion-type level shifter having a large area is used, by arranging a small number of elements (devices) (4 transistors Q1, Q2, Q3, Q4, and capacitor Cb) for each block in the horizontal direction, the level shifter can be shared among a plurality of blocks in the horizontal direction, and the area occupied by the level shifter can be reduced. In the structure of fig. 6, a level shifter × 1024 is required to decode 1024 horizontal blocks. In the case of sharing 8 horizontal blocks as in the present embodiment, in order to decode 1024 horizontal blocks, it is necessary to set 144 to a level shifter × 128 (unit block selection) +16(XT/XB decoder). This can significantly reduce the area occupied by the X decoder.
In the present embodiment, the increase in the number of booster circuits that share the PSV voltage from the level shifter acts to suppress the sharing of electric charges between the node N1 and the node N2 in the selected horizontal block when the local clamp signal XT is asserted. Also, the source voltage of the transistor Q4 to which the local boost signal/XB is applied may also be replaced with Vss for the local boost signal XB to suppress leakage from the node bst. The transistors Q2, Q4 in the non-selected state can use Vcc for the gate voltage, and formation of the XT, XB decoder is facilitated. The highest PASSVOLT voltage is clamped by a junction BV, automatically protecting BVox.
In the above embodiment, an example in which 1 block selection unit is shared by 8 blocks in the horizontal direction is shown, but this is just an example, and 1 block selection unit may be shared by a plurality of blocks in the horizontal direction.
As described above, although the preferred embodiments of the present invention have been described in detail, the present invention is not limited to the specific embodiments, and various modifications and changes can be made within the scope of the present invention described in the claims.
Claims (10)
1. A nonvolatile semiconductor memory device, comprising:
a memory cell array including a plurality of blocks; and
a block selection unit selecting a block of the memory cell array based on row address information,
the block selecting means includes:
a plurality of selection transistors connected to each word line of the block;
a 1 st circuit that charges a connection node connected to each gate of the plurality of selection transistors to turn on the plurality of selection transistors;
a 2 nd circuit connected to the 1 st circuit and boosting a voltage of the connection node; and
a supply unit configured to supply an operating voltage to one of the terminals of the plurality of selection transistors,
the connection node is boosted by the 1 st voltage by the operating voltage supplied from the supply means and then boosted by the 2 nd circuit,
wherein the supply means supplies the operating voltage to the plurality of selection transistors after the plurality of selection transistors are turned on and during the 1 st boosting period, self-boosts the voltage of the connection node by capacitive coupling between the gates and drains of the plurality of selection transistors, and further self-boosts the voltage of the connection node by capacitive coupling between the gates and sources of the plurality of selection transistors when the plurality of selection transistors are turned on,
wherein the 2 nd circuit includes a capacitor connected to the connection node,
wherein the 2 nd circuit supplies the voltage output from the 1 st circuit to the capacitor to perform 2 nd boosting when the plurality of selection transistors are turned on,
wherein the operating voltage at the time of the 1 st boosting is an intermediate voltage for enabling conduction of a NAND string.
2. The nonvolatile semiconductor memory device according to claim 1,
the 2 nd circuit includes a 1 st transistor connected to the 1 st circuit, and when the 1 st transistor is turned on, a voltage output from the 1 st circuit is supplied to one electrode of the capacitor via the 1 st transistor.
3. The nonvolatile semiconductor memory device according to claim 2,
the boosting of the connection node is performed a plurality of times by repeating charging and discharging of one electrode of the capacitor a plurality of times by switching on/off of the 1 st transistor a plurality of times.
4. The nonvolatile semiconductor memory device according to any one of claims 1 to 3,
the 2 nd circuit includes a 2 nd transistor connected to the 1 st circuit, and when the 2 nd transistor is set to an on state, the voltage output from the 1 st circuit is charged to the connection node via the 2 nd transistor.
5. The nonvolatile semiconductor memory device according to any one of claims 1 to 3,
the 1 st circuit includes a level shifter that outputs a 1 st voltage based on a high voltage supplied from a charge pump circuit.
6. The nonvolatile semiconductor memory device according to any one of claims 1 to 3,
the memory cell array comprises m rows by n columns of blocks, m and n are integers more than 2, and the 1 st circuit is shared by the blocks of one row.
7. The nonvolatile semiconductor memory device according to any one of claims 1 to 3,
the plurality of blocks each include the 2 nd circuit.
8. The nonvolatile semiconductor memory device according to any one of claims 1 to 3,
the supply means supplies a program voltage to the selected word line after the supply of the intermediate voltage, the program voltage being supplied to the selected word line via the selection transistor which performs the 2 nd boosting.
9. A method for driving a word line of a nonvolatile semiconductor memory device, comprising the steps of:
charging a 1 st voltage to respective gates of a plurality of block select transistors for selecting a block of the memory cell array in response to the row address information,
the block selection transistors are turned on by supplying an operating voltage required for each word line to one terminal of the block selection transistors to raise the 1 st voltage to the 2 nd voltage at each gate,
when the plurality of block selection transistors are turned on, the 2 nd voltage is boosted to the 3 rd voltage via the capacitor by supplying a voltage to the capacitor connected to each gate,
wherein after the plurality of block selection transistors are turned on and during a period in which the 1 st voltage is boosted to the 2 nd voltage, the operating voltage is supplied to the plurality of block selection transistors, the voltage of each gate is self-boosted by capacitive coupling between each gate and each drain of the plurality of block selection transistors, and the voltage of each gate is further self-boosted by capacitive coupling between each gate and each source of the plurality of block selection transistors,
wherein the voltage supplied to the capacitor is the 1 st voltage, and the operating voltage is an intermediate voltage for enabling conduction of the nand string.
10. The method of driving a wordline as claimed in claim 9 wherein
The 1 st voltage is charged by a level shifter supplied with a high voltage from a charge pump circuit,
the boosting from the 2 nd voltage to the 3 rd voltage is performed by a boosting circuit using the voltage output from the level shifter.
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| JP2016-121359 | 2016-06-20 | ||
| JP2016121359A JP2017228325A (en) | 2016-06-20 | 2016-06-20 | Non-volatile semiconductor device |
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| JP (1) | JP2017228325A (en) |
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| KR102665270B1 (en) * | 2016-11-09 | 2024-05-13 | 에스케이하이닉스 주식회사 | Semiconductor memory device and operating method thereof |
| IT201600121631A1 (en) * | 2016-11-30 | 2018-05-30 | St Microelectronics Srl | STAGE-CHANGING MEMORY DEVICE WITH A HIGH-SPEED WORD LINE PILOT CIRCUIT |
| US20200373596A1 (en) | 2017-11-28 | 2020-11-26 | Kyocera Corporation | Fuel cell system and equipment management method |
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| JP6535784B1 (en) | 2018-04-25 | 2019-06-26 | ウィンボンド エレクトロニクス コーポレーション | Semiconductor memory device |
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| US20170365325A1 (en) | 2017-12-21 |
| US10269409B2 (en) | 2019-04-23 |
| TW201801075A (en) | 2018-01-01 |
| KR102046073B1 (en) | 2019-11-18 |
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