CN107526011A - A kind of high-power micro discharge power loading system - Google Patents
A kind of high-power micro discharge power loading system Download PDFInfo
- Publication number
- CN107526011A CN107526011A CN201710752325.9A CN201710752325A CN107526011A CN 107526011 A CN107526011 A CN 107526011A CN 201710752325 A CN201710752325 A CN 201710752325A CN 107526011 A CN107526011 A CN 107526011A
- Authority
- CN
- China
- Prior art keywords
- power
- module
- amplifier
- loading system
- heavy
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Classifications
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
- G01R31/00—Arrangements for testing electric properties; Arrangements for locating electric faults; Arrangements for electrical testing characterised by what is being tested not provided for elsewhere
- G01R31/12—Testing dielectric strength or breakdown voltage ; Testing or monitoring effectiveness or level of insulation, e.g. of a cable or of an apparatus, for example using partial discharge measurements; Electrostatic testing
- G01R31/1227—Testing dielectric strength or breakdown voltage ; Testing or monitoring effectiveness or level of insulation, e.g. of a cable or of an apparatus, for example using partial discharge measurements; Electrostatic testing of components, parts or materials
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
- G01R1/00—Details of instruments or arrangements of the types included in groups G01R5/00 - G01R13/00 and G01R31/00
- G01R1/28—Provision in measuring instruments for reference values, e.g. standard voltage, standard waveform
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F1/00—Details of amplifiers with only discharge tubes, only semiconductor devices or only unspecified devices as amplifying elements
- H03F1/52—Circuit arrangements for protecting such amplifiers
Landscapes
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Amplifiers (AREA)
Abstract
The embodiment of the invention discloses a kind of high-power micro discharge power loading system, operating frequency range is 0.8-2.5GHz, continuous wave output power is more than 500W, possesses continuous wave, pulse, pulse adds three kinds of mode of operations of continuous wave, can also be worked in output end radio frequency open circuit, and will not be totally reflected the damage of frequency power.The high-power micro discharge power loading system of the embodiment of the present invention includes：The high-power combining amplifier module of final stage, high-power RF switch, the high-power harmonic filters of 0.8-1.4GHz, the high-power harmonic filters of 1.4-2.5GHz, 0.8-1.4GHz heavy-power circulators, 1.4-2.5GHz heavy-power circulators, 0.8-1.4GHz high power loads and 1.4-2.5GHz high power loads.
Description
Technical field
The present invention relates to the microwave electron communications field, more particularly to a kind of high-power micro discharge power loading system.
Background technology
In recent years, as the development of space technology, the power of microwave component work are increasing so that micro- put occurs for space
The possibility of electricity greatly increases.The microwave device being operated under high-power state, when power, radio frequency and device inside physical dimension
Meet Multipactor occurs during certain relation.
Micro discharge causes microwave transmission system standing-wave ratio to increase once serious consequence will be caused by producing, and reflection power increases
Add, noise level is raised, and causes system cisco unity malfunction.High level micro discharge can cause breakdown, and radio-frequency power is totally reflected,
Part permanent damage, communication channel disablement.Occur to produce to have a strong impact on based on micro discharge, and micro discharge produces
Raw complicated mechanism, is not grasped also completely so far；Meanwhile in practice can during manufacture craft and defective workmanship, and storage
Be able to can pollute etc. reason, can cause actual micro-discharge threshold lower than design；Therefore, it is necessary to the device that has manufactured with
And device to be used carries out micro discharge test, the operating power of especially present microwave device is increasing, then with greater need for one
Individual powerful micro discharge power loading system carries out whether test verification microwave device meets design requirement.
The content of the invention
The embodiments of the invention provide a kind of high-power micro discharge power loading system, operating frequency range 0.8-
2.5GHz, continuous wave output power are more than 500W, possess continuous wave, pulse, and pulse adds three kinds of mode of operations of continuous wave, exported
End-fire frequency open circuit can also work on, and will not be totally reflected the damage of frequency power.
A kind of high-power micro discharge power loading system provided in an embodiment of the present invention, including：Input unidirectional orientation coupling
Clutch, ALC control modules, step attenuator module, band logical switch filter module, prime driving amplifier module, final stage are big
Power synthesis amplifier module, great power bidirectional directional coupler, high-power RF switch, the high-power harmonic waves of 0.8-1.4GHz
The high-power harmonic filter of wave filter, 1.4-2.5GHz, 0.8-1.4GHz heavy-power circulators, 1.4-2.5GHz are high-power
Circulator, 0.8-1.4GHz high power loads, 1.4-2.5GHz high power loads, 380VAC-DC Switching Power Supplies, DC-DC electricity
The main monitoring module of source Voltage stabilizing module, MCU, power amplifier power supply biasing module, display panel module, front panel control module, fan power supply
Control module, power detector and temperature sensor；
The input unidirectional orientation coupler connects the ALC control modules；
The ALC control modules connect the step attenuator module；
The step attenuator module connects the band logical switch filter module；
The band logical switch filter module connects the prime driving amplifier module；
The prime driving amplifier module connects the high-power combining amplifier module of final stage；
The high-power combining amplifier module of final stage connects the great power bidirectional directional coupler；
The great power bidirectional directional coupler connects the high-power RF switch；
The high-power RF switch connects the high-power harmonic filters of 0.8-1.4GHz and the 1.4-
The high-power harmonic filters of 2.5GHz；
The high-power harmonic filters of 0.8-1.4GHz connect the 0.8-1.4GHz heavy-power circulators；It is described
0.8-1.4GHz heavy-power circulators connect the 0.8-1.4GHz high power loads；
The high-power harmonic filters of 1.4-2.5GHz connect the 1.4-2.5GHz heavy-power circulators；It is described
1.4-2.5GHz heavy-power circulator connects the 1.4-2.5GHz high power loads；
The ALC control modules, the great power bidirectional directional coupler and the power detector form closed loop；
The input unidirectional orientation coupler connects the power detector simultaneously to the main monitoring module conveyings of the MCU
Power detection voltage value；
The main monitoring modules of MCU connect the power amplifier power supply biasing module and high-power RF switch；
The power amplifier power supply biasing module connects the 380VAC-DC Switching Power Supplies；
The DC-DC power source Voltage stabilizing module connects the 380VAC-DC Switching Power Supplies；
The front panel control module passes through Can lines and the display panel module, the fan power control module, described
Main monitoring module, power amplifier power supply biasing module, the power detector and the temperature sensor are in parallel.
Preferably, the high-power combining amplifier module of the final stage includes：16 road 80W final amplifiers, 3DB electric bridges, 4 tunnels
Power combiner and No. 2 power combiners；
The 16 road 80W final amplifiers connect the 3DB electric bridges；
The 3DB electric bridges connect No. 4 power combiner；
No. 4 power combiner connection No. 2 power combiner.
Preferably, the high-power combining amplifier module of the final stage also includes：2 road power splitters and 4 road power splitters；
2 road power splitter connection 4 road power splitter；
4 road power splitter connects the 3DB electric bridges.
Preferably, the input unidirectional orientation coupler connection radiofrequency signal input interface.
Preferably, the 0.8-1.4GHz heavy-power circulators and the 1.4-2.5GHz heavy-power circulators all connect
Radiofrequency signal output interface.
Preferably, the input unidirectional orientation coupler and the power detector, for realizing input power electricity
Pressure detection.
Preferably, the main monitoring modules of the MCU, for by judging that it is inclined that the size of input power controls the power amplifier to power
Put being switched on and off for module.
Preferably, the main monitoring modules of the MCU, it is additionally operable to carry out power detection conversion and right to the power detector
The high-power RF switch carries out frequency range switching.
Preferably, the main monitoring modules of the MCU, it is additionally operable to overpower protection and crosses standing-wave ratio protection.
Preferably, the power amplifier power supply biasing module, for providing power supply for power amplifier modules at different levels, and monitor every
Power amplifier chips are carried out excessively stream, overvoltage and overheat protector by electric current, grid voltage, leakage pressure and the temperature of road power amplifier chips.
As can be seen from the above technical solutions, the embodiment of the present invention has advantages below：
A kind of high-power micro discharge power loading system provided in the embodiment of the present invention includes：Input unidirectional orientation coupling
Clutch, ALC control modules, step attenuator module, band logical switch filter module, prime driving amplifier module, final stage are big
Power synthesis amplifier module, great power bidirectional directional coupler, high-power RF switch, the high-power harmonic waves of 0.8-1.4GHz
The high-power harmonic filter of wave filter, 1.4-2.5GHz, 0.8-1.4GHz heavy-power circulators, 1.4-2.5GHz are high-power
Circulator, 0.8-1.4GHz high power loads, 1.4-2.5GHz high power loads, 380VAC-DC Switching Power Supplies, DC-DC electricity
The main monitoring module of source Voltage stabilizing module, MCU, power amplifier power supply biasing module, display panel module, front panel control module, fan power supply
Control module, power detector and temperature sensor；The input unidirectional orientation coupler connects the ALC control modules；
The ALC control modules connect the step attenuator module；The step attenuator module connects the band logical switch filtering
Device module；The band logical switch filter module connects the prime driving amplifier module；The prime driving amplifier mould
Block connects the high-power combining amplifier module of final stage；The high-power combining amplifier module connection of final stage is described high-power
Bidirectional oriented coupler；The great power bidirectional directional coupler connects the high-power RF switch；The high-power RF
Switch connects the high-power harmonic filters of 0.8-1.4GHz and the high-power harmonic filters of the 1.4-2.5GHz；It is described
The high-power harmonic filters of 0.8-1.4GHz connect the 0.8-1.4GHz heavy-power circulators；The 0.8-1.4GHz is big
Power circulator connects the 0.8-1.4GHz high power loads；The high-power harmonic filter connection institutes of 1.4-2.5GHz
State 1.4-2.5GHz heavy-power circulators；The 1.4-2.5GHz heavy-power circulators connect the big work(of 1.4-2.5GHz
Rate loads；The ALC control modules, the great power bidirectional directional coupler and the power detector form closed loop；It is described
Input unidirectional orientation coupler connects the power detector simultaneously to the main monitoring module transmission power detection voltages of the MCU
Value；The main monitoring modules of MCU connect the power amplifier power supply biasing module and high-power RF switch；The power amplifier power supply biasing
Module connects the 380VAC-DC Switching Power Supplies；The DC-DC power source Voltage stabilizing module connects the 380VAC-DC Switching Power Supplies；
The front panel control module passes through Can lines and the display panel module, the fan power control module, the main monitoring mould
Block, power amplifier power supply biasing module, the power detector and the temperature sensor are in parallel.In the present embodiment, by big
The high-power harmonic filter of power radio-frequency switch, 0.8-1.4GHz, the high-power harmonic filters of 1.4-2.5GHz, 0.8-
1.4GHz heavy-power circulators, 1.4-2.5GHz heavy-power circulators 12,0.8-1.4GHz high power loads, 1.4-
2.5GHz high power loads and the high-power combining amplifier module of final stage, which form, is divided to 0.8-2.5G working frequencies two sections of outputs
Realize continuous wave output power and be more than 500W, possess continuous wave, pulse, pulse adds three kinds of mode of operations of continuous wave, exported
End-fire frequency open circuit can also work on, and will not be totally reflected the damage of frequency power, solve existing power loading system only
Multistage, the narrow bandwidth of circulator, power very little can be divided into working frequency, and surveyed carrying out the high-power micro discharge of microwave device
During experiment card, because device produces micro discharge, power total reflection is formed, so as to damage the skill of the chip of power amplifier
Art problem.
Brief description of the drawings
In order to illustrate more clearly about the embodiment of the present invention or technical scheme of the prior art, below will be to embodiment or existing
There is the required accompanying drawing used in technology description to be briefly described, it should be apparent that, drawings in the following description are only this
Some embodiments of invention, for those of ordinary skill in the art, without having to pay creative labor, may be used also
To obtain other accompanying drawings according to these accompanying drawings.
A kind of structure of one embodiment of the high-power micro discharge power loading system provided in Fig. 1 embodiment of the present invention
Schematic diagram；
A kind of structure of one embodiment of the high-power combining amplifier module of final stage provided in Fig. 2 embodiment of the present invention
Schematic diagram.
Embodiment
The embodiments of the invention provide a kind of high-power micro discharge power loading system, operating frequency range 0.8-
2.5GHz, continuous wave output power are more than 500W, possess continuous wave, pulse, and pulse adds three kinds of mode of operations of continuous wave, exported
End-fire frequency open circuit can also work on, and will not be totally reflected the damage of frequency power.
To enable goal of the invention, feature, the advantage of the present invention more obvious and understandable, below in conjunction with the present invention
Accompanying drawing in embodiment, the technical scheme in the embodiment of the present invention is clearly and completely described, it is clear that disclosed below
Embodiment be only part of the embodiment of the present invention, and not all embodiment.Based on the embodiment in the present invention, this area
All other embodiment that those of ordinary skill is obtained under the premise of creative work is not made, belongs to protection of the present invention
Scope.
An a kind of referring to Fig. 1, implementation of the high-power micro discharge power loading system provided in the embodiment of the present invention
Example includes：
Input unidirectional orientation coupler 1, ALC control modules 2, step attenuator module 3, band logical switch filter module
4th, the high-power combining amplifier module 6 of prime driving amplifier module 5, final stage, great power bidirectional directional coupler 7, high-power
The high-power harmonic filter 9 of RF switch 8,0.8-1.4GHz, the high-power harmonic filters 10 of 1.4-2.5GHz, 0.8-
1.4GHz heavy-power circulators 11,1.4-2.5GHz heavy-power circulators 12,0.8-1.4GHz high power loads 13,1.4-
The main monitoring module 17 of 2.5GHz high power loads 14,380VAC-DC Switching Power Supplies 15, DC-DC power source Voltage stabilizing module 16, MCU, work(
Put power supply biasing module 18, display panel module 19, front panel control module 20, fan power control module 21, power detector
22 and temperature sensor 23；
RF signal power amplifier section be sequentially connected in series include input unidirectional orientation coupler 1, ALC control modules 2,
Step attenuator module 3, band logical switch filter module 4, prime driving amplifier module 5, the high-power combining amplifier of final stage
Module 6, great power bidirectional directional coupler 7, high-power RF switch 8, the high-power harmonic filters 9 of 0.8-1.4GHz,
The high-power harmonic filters 10 of 1.4-2.5GHz, 0.8-1.4GHz heavy-power circulators 11, the high-power annulars of 1.4-2.5GHz
Device 12,0.8-1.4GHz high power loads 13,1.4-2.5GHz high power loads 14.Power supply, monitoring, display, protection part
Include the main monitoring module 17 of 380V AC-DC Switching Power Supplies 15, DC-DC power module of voltage regulation 16, MCU, power amplifier power supply biasing mould
Block 18, display panel module 19, front panel control module 20, fan power control module 21, power detector 22 and TEMP
Device 23.
Input unidirectional orientation coupler 1 connects ALC control modules 2；
ALC control modules 2 connect step attenuator module 3；
The connect band of step attenuator module 3, which opens up, closes filter module 4；
Band logical switch filter module 4 connects prime driving amplifier module 5；
Prime driving amplifier module 5 connects the high-power combining amplifier module 6 of final stage；
Prime driving amplifier module 5 is that the high-power offer high-gain of combining amplifier module 6 of final stage pushes away with signal amplification
Dynamic source.
The high-power combining amplifier module 6 of final stage connects great power bidirectional directional coupler 7；
Great power bidirectional directional coupler 7 connects high-power RF switch 8；
The high-power harmonic filters 9 of the connection 0.8-1.4GHz of high-power RF switch 8 and 1.4-2.5GHz are high-power humorous
Wave filter 10；
The high-power harmonic filters 9 of 0.8-1.4GHz connect 0.8-1.4GHz heavy-power circulators 11；0.8-1.4GHz
Heavy-power circulator 11 connects 0.8-1.4GHz high power loads 13；
The high-power harmonic filters 10 of 1.4-2.5GHz connect 1.4-2.5GHz heavy-power circulators 12；1.4-
2.5GHz heavy-power circulators 12 connect 1.4-2.5GHz high power loads 14；
ALC control modules 2, great power bidirectional directional coupler 7 and power detector 22 form closed loop；
ALC control modules 2 and great power bidirectional directional coupler 7, power detector 22 forms closed loop, by output work
Forward and reverse voltage detecting of rate, so as to realize that the limitation of output power value is set, overpower, cross the protection such as standing-wave ratio.
The Series power wave detector 22 of input unidirectional orientation coupler 1 is examined to the main transmission powers of monitoring module 17 of MCU simultaneously
Survey magnitude of voltage；Input unidirectional orientation coupler 1 and power detector 22 realized input power voltage detecting, and input is unidirectional
Directional coupler 1 and power detector 22 convey magnitude of voltage, input unidirectional orientation coupler 1 to the main monitoring modules 17 of MCU again
With power detector 22 preceding, for the main monitoring modules 17 of MCU rear, input unidirectional orientation coupler 1 and power detector 22 are same
When to the main transmission powers of monitoring module 17 of MCU detect magnitude of voltage.
The main monitoring modules 17 of MCU connect power amplifier power supply biasing module 18 and high-power RF switch 8；
The main monitoring modules 17 of MCU, for by judging that the size of input power controls opening for power amplifier power supply biasing module 18
Open and turn off.
The main monitoring modules 17 of MCU, it is additionally operable to carry out power detector 22 power detection conversion and to high-power RF
Switch 8 carries out frequency range switching.
The main monitoring modules 17 of MCU, it is additionally operable to overpower protection and crosses standing-wave ratio protection.
The main monitoring modules 17 of MCU judge the size of input power so as to control the unlatching of power amplifier power supply biasing module 18 and pass
It is disconnected, so as to realize that the warning of input power was protected with power amplifier.
Power amplifier power supply biasing module 18 connects 380VAC-DC Switching Power Supplies 15；
DC-DC power source Voltage stabilizing module 16 connects 380VAC-DC Switching Power Supplies 15；DC-DC power source Voltage stabilizing module 16, for for
Voltage corresponding to control circuit offer.
Front panel control module 20 passes through Can lines and display panel module 19, fan power control module 21, main monitoring mould
Block, power amplifier power supply biasing module 18, power detector 22 and temperature sensor 23 are in parallel.
Step attenuator module 3 and front panel control module 20 realize gain reduction regulation and the gain flatness of system
Regulation, band logical switch filter module 4 are divided to two sections of 0.8-1.4G and 1.4-2.5G, can be to the harmonic wave of input signal, clutter
Suppressed, while can also carry out wrong section guarantor well, prevented because input signal frequency range mistake, and cause to damage below big
Power circulator and high-power harmonic filter.
Further, the high-power combining amplifier module 6 of final stage includes：16 road 80W final amplifiers 204,3DB electric bridges
203rd, No. 4 power combiners 205 and No. 2 power combiners 206；
16 road 80W final amplifiers 204 connection 3DB electric bridges 203；
3DB electric bridges 203 connect No. 4 power combiners 205；
No. 4 power combiners 205 connect No. 2 power combiners 206.
Further, the high-power combining amplifier module 6 of final stage also includes：2 road power splitters 201 and 4 road power splitters 202；
2 road power splitters 201 connect 4 road power splitters 202；
4 road power splitters 202 connection 3DB electric bridges 203.
Further, input unidirectional orientation coupler 1 connects radiofrequency signal input interface.
Further, 0.8-1.4GHz heavy-power circulators 11 and 1.4-2.5GHz heavy-power circulators 12, which all connect, penetrates
Frequency signal output interface.
Further, input unidirectional orientation coupler 1 and power detector 22, for realizing that input power voltage was examined
Survey.
Further, power amplifier power supply biasing module 18, for providing power supply for power amplifier modules at different levels, and monitor every
Power amplifier chips are carried out excessively stream, overvoltage and overheat protector by electric current, grid voltage, leakage pressure and the temperature of road power amplifier chips.
The main monitoring module 17 of 380V AC-DC Switching Power Supplies 15, DC-DC power module of voltage regulation 16, MCU, power amplifier power supply biasing
Module 18, display panel module 19, front panel control module 20, fan power control module 21, power detector 22, TEMP
Device 23 is connected with other parts by power line with data wire.
A power output provided in an embodiment of the present invention is more than the high-power S frequency ranges micro discharge power loading systems of 500W,
Possess continuous wave, pulse, pulse adds three kinds of mode of operations of continuous wave, can adjust power output in real time, frequency, gain, long-range distant
Control switch, there is overvoltage, excessively stream, cross standing wave, overdriving, excess temperature, fan disconnection defencive function.This power loading system has excellent
The advantages that good power amplification effect, energy long-time stable work, and non-linear distortion is small, anti-overdriving capacity device can continue 24
Hour bears incoming level and is up to 2dBm, systematic function and life-span is had no effect, anti-loading mismatch capability can bear work(
Rate is totally reflected, and systematic function and life-span are had no effect.This power loading system can solve to prevent that microwave device is big well
During power microdischarges test checking, because the power capacity of microwave device, physical dimension design deficiency, Multipactor occurs,
Cause radio-frequency power to be totally reflected, damage the technical problem of micro discharge power loading system.
A kind of wideband high-power micro discharge power loading system provided in an embodiment of the present invention, its operating frequency range
0.8-2.5GHz, continuous wave output power are more than 500W, and power loading system can also work in output end radio frequency open circuit,
And system will not be totally reflected the damage of frequency power.
Micro discharge power loading system provided in an embodiment of the present invention has broadband, high-gain and high power, can bear
The total reflection of power, moreover it is possible to work on, do not damage.Power loading system working frequency is 0.8-2.5GHz, and radio frequency input is defeated
Exit port impedance is 50 Ω, continuous wave output power >=500W, power gain >=57dB, gain flatness≤± 1.5dB, is exported
Power stability≤± 0.25dB, long-run gains stability≤1dBpp, 25dB (digital regulated, the steppings of power gain adjustable range
0.5dB), harmonics restraint≤- 60dBc, spurious reduction≤- 65dBc, input vswr≤1.3:1, output VSWR≤1.4:1.
In the present embodiment, switched by high-power RF, the high-power harmonic filters of 0.8-1.4GHz, 1.4-2.5GHz
High-power harmonic filter, 0.8-1.4GHz heavy-power circulators, 1.4-2.5GHz heavy-power circulators 12,0.8-
1.4GHz high power loads, 1.4-2.5GHz high power loads and the high-power combining amplifier module of final stage are formd to 0.8-
2.5G working frequencies are divided to two sections of outputs to realize continuous wave output power and are more than 500W, possess continuous wave, pulse, pulse adds continuously
It three kinds of mode of operations of ripple, can also be worked in output end radio frequency open circuit, and the damage of frequency power will not be totally reflected, solved
Existing power loading system can only be divided into multistage to working frequency, the narrow bandwidth of circulator, power very little, and carry out it is micro-
During the high-power micro discharge test checking of wave device, because device produces micro discharge, power total reflection is formed, so as to damage
The technical problem of the chip of power amplifier.
The above is that a kind of high-power micro discharge power loading system is described in detail, below will be to a kind of high-power
The high-power combining amplifier module of final stage of micro discharge power loading system is described in detail, referring to Fig. 2, the present invention is real
Applying a kind of one embodiment of the high-power combining amplifier module of the final stage provided in example includes：
2 road power splitters 201,4 road power splitters 202,3DB electric bridges 203,80W final amplifiers 204, No. 4 power combiners
205 and No. 2 power combiners 206.
The high-power combining amplifier module 6 of final stage is that a kind of high-power micro discharge power provided in the embodiment of the present invention adds
One of nucleus module of loading system, the 80W final amplifiers 204 on 16 tunnels, first pass around the conjunction of the combination of two power of 3DB electric bridges 203
As 8 tunnels, then by No. 4 power combiners 205 2 tunnels are synthesized, then the big work(on 1 tunnel is synthesized by No. 2 power combiners 206
Rate exports, and this is one ultra-large, the power combing mode of ultra wide band, and synthesis power reaches more than 800W.
380V AC-DC Switching Power Supplies 15 are primarily to be that DC voltage 27V is supplied to the AC conversion of high pressure 380
System uses, and DC-DC power source Voltage stabilizing module 16 mainly provides corresponding operating voltage for control circuit.The main monitoring modules of MCU
17 mainly carry out power detection conversion to power detector 22, also carry out frequency range switching to high power switch.Power amplifier is powered
Biasing plate 18 obtains 27V operating voltages from AC-DC Switching Power Supplies and provides power supply for power amplifier modules at different levels, wherein work(at different levels
Rate amplifier module refers to prime and final stage power amplifier module, and monitors the electric current per road power amplifier chips, grid voltage, leakage pressure, temperature, to work(
Put chip and carry out excessively stream, overvoltage, overheat protector, power amplifier chips refer to the amplifier chip inside prime and final stage power amplifier module.Before
Panel control module 20 is by Can lines and display panel module 19, and fan power control module 21, main monitoring module 17, power amplifier is inclined
Module 18, power detector 22 are put, temperature sensor 23 is together in parallel, and forward power information, reverse power information, failure is protected
Presentation of information is protected on display screen, is also connected with the knob of panel, gain that can be to power loading system, power output and
Frequency is configured.
High-power RF switch 8 is filtered with the high-power harmonic filters 9 of 0.8-1.4GHz, the high-power harmonic waves of 1.4-2.5GHz
Ripple device 10,0.8-1.4GHz heavy-power circulators 11,1.4-2.5GHz heavy-power circulators 12,0.8-1.4GHz are high-power
Load the 13, shape of 1.4-2.5GHz high power loads 14 and be divided to two sections of outputs to 0.8-2.5GHz, due to 0.8-1.25GHz
The harmonic wave of frequency range falls in 0.8-2.5GHz working frequency range, wants to realize higher harmonics restraint, it is necessary to which being divided into two sections just can be with
Realize, place, which employs, is divided into the high-power harmonic filters 9 of 0.8-1.4GHz, the high-power harmonic filters 10 of 1.4-2.5GHz
Frequency range sets the method changed.0.8-1.4GHz heavy-power circulators 11,1.4-2.5GHz heavy-power circulators 12 and 0.8-
The combination of 1.4GHz high power loads 13,1.4-2.5GHz high power loads 14 is even more to have broken the narrow bandwidth of existing circulator,
The defects of power is small.0.8-2.5GHz working frequency range is added powerful, the circulator of high isolation makes single hop, it is known that
Technology can only be divided into multistage, and also 0.8-2.5GHz working frequency range is divided into two sections to power by very little, this micro discharge power loading system
It is achieved that the power capacity of circulator is more up to 1000W, isolation is more than 15dB, and loss is less than 0.6dB.0.8-
1.4GHz heavy-power circulators 11,1.4-2.5GHz heavy-power circulators 12 and 0.8-1.4GHz high power loads 13,1.4-
2.5GHz high power loads 14, solve micro discharge power loading system and carrying out the high-power micro discharge test checking of microwave device
During, micro discharge will not be produced because of device, power total reflection be formed, so as to damage the technology of the chip of power amplifier
Problem.
It is apparent to those skilled in the art that for convenience and simplicity of description, the system of foregoing description,
The specific work process of device and unit, the corresponding process in preceding method embodiment is may be referred to, will not be repeated here.
More than, the above embodiments are merely illustrative of the technical solutions of the present invention, rather than its limitations；Although with reference to foregoing reality
Example is applied the present invention is described in detail, it will be understood by those within the art that：It still can be to foregoing each
Technical scheme described in embodiment is modified, or carries out equivalent substitution to which part technical characteristic；And these are changed
Or replace, the essence of appropriate technical solution is departed from the spirit and scope of various embodiments of the present invention technical scheme.
Claims (10)
- A kind of 1. high-power micro discharge power loading system, it is characterised in that including：Input unidirectional orientation coupler, ALC controls Molding block, step attenuator module, band logical switch filter module, prime driving amplifier module, the high-power synthesis of final stage are put Big device module, great power bidirectional directional coupler, high-power RF switch, the high-power harmonic filters of 0.8-1.4GHz, The high-power harmonic filters of 1.4-2.5GHz, 0.8-1.4GHz heavy-power circulators, 1.4-2.5GHz heavy-power circulators, 0.8-1.4GHz high power loads, 1.4-2.5GHz high power loads, 380VAC-DC Switching Power Supplies, DC-DC power source voltage stabilizing mould The main monitoring module of block, MCU, power amplifier power supply biasing module, display panel module, front panel control module, fan power control module, Power detector and temperature sensor；The input unidirectional orientation coupler connects the ALC control modules；The ALC control modules connect the step attenuator module；The step attenuator module connects the band logical switch filter module；The band logical switch filter module connects the prime driving amplifier module；The prime driving amplifier module connects the high-power combining amplifier module of final stage；The high-power combining amplifier module of final stage connects the great power bidirectional directional coupler；The great power bidirectional directional coupler connects the high-power RF switch；The high-power RF switch connects the high-power harmonic filters of 0.8-1.4GHz and the 1.4-2.5GHz is big Power harmonics wave filter；The high-power harmonic filters of 0.8-1.4GHz connect the 0.8-1.4GHz heavy-power circulators；The 0.8- 1.4GHz heavy-power circulators connect the 0.8-1.4GHz high power loads；The high-power harmonic filters of 1.4-2.5GHz connect the 1.4-2.5GHz heavy-power circulators；The 1.4- 2.5GHz heavy-power circulators connect the 1.4-2.5GHz high power loads；The ALC control modules, the great power bidirectional directional coupler and the power detector form closed loop；The input unidirectional orientation coupler connects the power detector simultaneously to the main monitoring module transmission powers of the MCU Detect magnitude of voltage；The main monitoring modules of MCU connect the power amplifier power supply biasing module and high-power RF switch；The power amplifier power supply biasing module connects the 380VAC-DC Switching Power Supplies；The DC-DC power source Voltage stabilizing module connects the 380VAC-DC Switching Power Supplies；The front panel control module passes through Can lines and the display panel module, the fan power control module, the main prison It is in parallel to control module, power amplifier power supply biasing module, the power detector and the temperature sensor.
- 2. high-power micro discharge power loading system according to claim 1, it is characterised in that the high-power conjunction of final stage Include into amplifier module：16 road 80W final amplifiers, 3DB electric bridges, No. 4 power combiners and No. 2 power combiners；The 16 road 80W final amplifiers connect the 3DB electric bridges；The 3DB electric bridges connect No. 4 power combiner；No. 4 power combiner connection No. 2 power combiner.
- 3. high-power micro discharge power loading system according to claim 2, it is characterised in that the high-power conjunction of final stage Also include into amplifier module：2 road power splitters and 4 road power splitters；2 road power splitter connection 4 road power splitter；4 road power splitter connects the 3DB electric bridges.
- 4. high-power micro discharge power loading system according to claim 3, it is characterised in that the input is unidirectionally fixed Radiofrequency signal input interface is connected to coupler.
- 5. high-power micro discharge power loading system according to claim 4, it is characterised in that the 0.8-1.4GHz Heavy-power circulator and the 1.4-2.5GHz heavy-power circulators all connect radiofrequency signal output interface.
- 6. high-power micro discharge power loading system according to claim 5, it is characterised in that the input is unidirectionally fixed To coupler and the power detector, for realizing input power voltage detecting.
- 7. high-power micro discharge power loading system according to claim 6, it is characterised in that the main monitoring moulds of MCU Block, for by judging that the size of input power controls being switched on and off for the power amplifier power supply biasing module.
- 8. high-power micro discharge power loading system according to claim 7, it is characterised in that the main monitoring moulds of MCU Block, it is additionally operable to carry out the power detector power detection conversion and high-power RF switch progress frequency range is cut Change.
- 9. high-power micro- amplifying power loading system according to claim 8, it is characterised in that the main monitoring moulds of MCU Block, it is additionally operable to overpower protection and crosses standing-wave ratio protection.
- 10. high-power micro discharge power loading system according to claim 9, it is characterised in that the power amplifier power supply is inclined Put module, for providing power supply for power amplifier modules at different levels, and monitor per the electric current of road power amplifier chips, grid voltage, leakage pressure and Temperature, excessively stream, overvoltage and overheat protector are carried out to power amplifier chips.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201710752325.9A CN107526011B (en) | 2017-08-28 | 2017-08-28 | High-power micro-discharge power loading system |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201710752325.9A CN107526011B (en) | 2017-08-28 | 2017-08-28 | High-power micro-discharge power loading system |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN107526011A true CN107526011A (en) | 2017-12-29 |
| CN107526011B CN107526011B (en) | 2019-12-20 |
Family
ID=60682459
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201710752325.9A Active CN107526011B (en) | 2017-08-28 | 2017-08-28 | High-power micro-discharge power loading system |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN107526011B (en) |
Cited By (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN109164338A (en) * | 2018-07-20 | 2019-01-08 | 中国船舶重工集团公司第七O三研究所无锡分部 | A kind of high-power middle straightening with on-line monitoring function drains off formula load device |
| CN109188079A (en) * | 2018-11-07 | 2019-01-11 | 中电科仪器仪表有限公司 | A kind of vacuum micro discharge experiment test device and method |
| CN110635810A (en) * | 2018-06-22 | 2019-12-31 | 中国电子科技集团公司第二十九研究所 | Four-channel-to-one high-power transmitting system and channel hot switching method and application thereof |
| CN111385017A (en) * | 2020-03-10 | 2020-07-07 | 四川灵通电讯有限公司 | KA frequency band high-power amplifier and implementation method thereof |
| CN112462666A (en) * | 2020-12-01 | 2021-03-09 | 成都沃特塞恩电子技术有限公司 | Split type high power source control system and split type high power source |
| CN113406985A (en) * | 2021-07-02 | 2021-09-17 | 中国科学院近代物理研究所 | All-solid-state power source system |
| CN114024515A (en) * | 2021-09-18 | 2022-02-08 | 中国电子科技集团公司第二十九研究所 | Dual-mode power amplifier |
| CN117833609A (en) * | 2024-01-05 | 2024-04-05 | 江苏神州半导体科技有限公司 | Pulse radio frequency power supply system |
Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN201499136U (en) * | 2009-09-03 | 2010-06-02 | 中国电子科技集团公司第十四研究所 | P-band self-selected frequency linear power amplifier |
| CN103354468A (en) * | 2013-07-12 | 2013-10-16 | 成都林海电子有限责任公司 | L-band upconverter and upconversion method in bandwidth of 1.2GHz |
| CN104836549A (en) * | 2015-04-23 | 2015-08-12 | 中国电子科技集团公司第四十一研究所 | Device and method for generating pulse modulation signals adjustable in top-bottom power and used for micro-discharge effect detection |
| CN105119576A (en) * | 2015-08-26 | 2015-12-02 | 中国电子科技集团公司第二十七研究所 | S-band continuous-wave solid-state high power amplification device |
| WO2017098580A1 (en) * | 2015-12-08 | 2017-06-15 | 三菱電機株式会社 | Multi-stage high frequency amplifier |
-
2017
- 2017-08-28 CN CN201710752325.9A patent/CN107526011B/en active Active
Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN201499136U (en) * | 2009-09-03 | 2010-06-02 | 中国电子科技集团公司第十四研究所 | P-band self-selected frequency linear power amplifier |
| CN103354468A (en) * | 2013-07-12 | 2013-10-16 | 成都林海电子有限责任公司 | L-band upconverter and upconversion method in bandwidth of 1.2GHz |
| CN104836549A (en) * | 2015-04-23 | 2015-08-12 | 中国电子科技集团公司第四十一研究所 | Device and method for generating pulse modulation signals adjustable in top-bottom power and used for micro-discharge effect detection |
| CN105119576A (en) * | 2015-08-26 | 2015-12-02 | 中国电子科技集团公司第二十七研究所 | S-band continuous-wave solid-state high power amplification device |
| WO2017098580A1 (en) * | 2015-12-08 | 2017-06-15 | 三菱電機株式会社 | Multi-stage high frequency amplifier |
Non-Patent Citations (2)
| Title |
|---|
| 徐超超: "S波段高效率Doherty射频功率放大器的设计与研究", 《中国优秀硕士学位论文全文数据库 信息科技辑》 * |
| 魏焕 等: "微放电检测方法分析", 《现代电子技术》 * |
Cited By (10)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN110635810A (en) * | 2018-06-22 | 2019-12-31 | 中国电子科技集团公司第二十九研究所 | Four-channel-to-one high-power transmitting system and channel hot switching method and application thereof |
| CN110635810B (en) * | 2018-06-22 | 2021-06-25 | 中国电子科技集团公司第二十九研究所 | Four-channel-to-one high-power transmitting system and channel hot switching method and application thereof |
| CN109164338A (en) * | 2018-07-20 | 2019-01-08 | 中国船舶重工集团公司第七O三研究所无锡分部 | A kind of high-power middle straightening with on-line monitoring function drains off formula load device |
| CN109164338B (en) * | 2018-07-20 | 2021-04-16 | 中国船舶重工集团公司第七O三研究所无锡分部 | High-power medium-voltage direct-current dry-type load device with online monitoring function |
| CN109188079A (en) * | 2018-11-07 | 2019-01-11 | 中电科仪器仪表有限公司 | A kind of vacuum micro discharge experiment test device and method |
| CN111385017A (en) * | 2020-03-10 | 2020-07-07 | 四川灵通电讯有限公司 | KA frequency band high-power amplifier and implementation method thereof |
| CN112462666A (en) * | 2020-12-01 | 2021-03-09 | 成都沃特塞恩电子技术有限公司 | Split type high power source control system and split type high power source |
| CN113406985A (en) * | 2021-07-02 | 2021-09-17 | 中国科学院近代物理研究所 | All-solid-state power source system |
| CN114024515A (en) * | 2021-09-18 | 2022-02-08 | 中国电子科技集团公司第二十九研究所 | Dual-mode power amplifier |
| CN117833609A (en) * | 2024-01-05 | 2024-04-05 | 江苏神州半导体科技有限公司 | Pulse radio frequency power supply system |
Also Published As
| Publication number | Publication date |
|---|---|
| CN107526011B (en) | 2019-12-20 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN107526011A (en) | A kind of high-power micro discharge power loading system | |
| CN105356928B (en) | A kind of Ku band satellite communication frequency conversion terminal device | |
| CN104113286B (en) | A kind of Doherty power amplification circuits | |
| CN102025432A (en) | Forward and reverse passive inter-modulation (PIM) testing device and method for isolator | |
| CN105119576A (en) | S-band continuous-wave solid-state high power amplification device | |
| CN106941359A (en) | The high-power low-noise reception front end of millimeter wave | |
| CN204046583U (en) | High dynamically high-gain broadband receiver | |
| CN103675764B (en) | A kind of all solid state multichannel synthesis microwave power radar transmitter | |
| CN101900763B (en) | Method for monitoring constant standing-wave ratio | |
| CN101834571A (en) | Efficient linear power amplifier circuit | |
| CN111198354A (en) | ISAR power amplification module based on target detection radar | |
| CN205195694U (en) | Front end is received to S wave band low noise | |
| WO2022041286A1 (en) | Doherty power amplifier, printed circuit board, and base station | |
| CN104917468A (en) | Three-path reverse Doherty power amplifier and implementation method | |
| CN212845905U (en) | ISAR power amplification module based on target detection radar | |
| US11849528B1 (en) | Impedance matching apparatus and method for solid-state microwave source | |
| KR101094067B1 (en) | Class-F And Inverse Class-F Doherty Amplifier | |
| CN107210715B (en) | Power amplification device | |
| CN204886878U (en) | Solid -state high power amplifier device of S frequency channel continuous wave | |
| CN206422751U (en) | A kind of X-band solid-state power amplifier | |
| CN116526991A (en) | Simultaneous dual-band dual-mode power amplifier | |
| CN210490846U (en) | Half-duplex multi-band antenna control system for terminal of Internet of things | |
| CN204206186U (en) | Binary channels passive device power margin test macro | |
| CN217282914U (en) | Ultra-wideband high-power radio frequency signal generating device | |
| CN208401846U (en) | A kind of 40 watts of satellite uplink amplifiers of Alternating Current Power Supply Ku wave band |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PB01 | Publication | ||
| PB01 | Publication | ||
| SE01 | Entry into force of request for substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| CB03 | Change of inventor or designer information |
Inventor after: Wu Meng Inventor after: Li Yuexing Inventor after: Liu Gengye Inventor before: Wu Meng |
|
| CB03 | Change of inventor or designer information | ||
| TA01 | Transfer of patent application right |
Effective date of registration: 20180420 Address after: 510670 Guangzhou science and Technology Development Zone, Guangdong 402, science Avenue 162, B2 Applicant after: GUANGZHOU QUANJIE COMMUNICATION TECHNOLOGY CO.,LTD. Applicant after: TIME VARYING TRANSMISSION Co.,Ltd. Address before: 411100 3 A innovation and entrepreneurship Park, No. 9, Shuang Yong Road, Xiangtan hi tech Zone, Hunan. Applicant before: TIME VARYING TRANSMISSION Co.,Ltd. |
|
| TA01 | Transfer of patent application right | ||
| GR01 | Patent grant | ||
| GR01 | Patent grant | ||
| TR01 | Transfer of patent right |
Effective date of registration: 20230818 Address after: 411101 No. 9 Chuangye Road, high tech Zone, Xiangtan City, Hunan Province Patentee after: TIME VARYING TRANSMISSION Co.,Ltd. Address before: 510670 Science Avenue 162 B2 402, Guangzhou High-tech Industrial Development Zone, Guangdong Province Patentee before: GUANGZHOU QUANJIE COMMUNICATION TECHNOLOGY CO.,LTD. Patentee before: TIME VARYING TRANSMISSION Co.,Ltd. |
|
| TR01 | Transfer of patent right |