CN107425120B - Method for rapidly preparing organic electronic component - Google Patents
Method for rapidly preparing organic electronic component Download PDFInfo
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- CN107425120B CN107425120B CN201710674674.3A CN201710674674A CN107425120B CN 107425120 B CN107425120 B CN 107425120B CN 201710674674 A CN201710674674 A CN 201710674674A CN 107425120 B CN107425120 B CN 107425120B
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- electronic component
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- conductive layer
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- 238000000034 method Methods 0.000 title claims abstract description 38
- 229910052736 halogen Inorganic materials 0.000 claims abstract description 25
- 229910052721 tungsten Inorganic materials 0.000 claims abstract description 25
- 239000010937 tungsten Substances 0.000 claims abstract description 25
- 239000000758 substrate Substances 0.000 claims abstract description 19
- 238000004519 manufacturing process Methods 0.000 claims abstract description 18
- 150000002367 halogens Chemical class 0.000 claims abstract description 15
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 claims abstract description 15
- 238000002360 preparation method Methods 0.000 claims abstract description 13
- 239000004065 semiconductor Substances 0.000 claims abstract description 10
- 239000010409 thin film Substances 0.000 claims abstract description 10
- -1 tungsten halogen Chemical class 0.000 claims description 10
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical group [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 claims description 9
- 239000003990 capacitor Substances 0.000 claims description 9
- 229910052709 silver Inorganic materials 0.000 claims description 9
- 239000004332 silver Substances 0.000 claims description 9
- 229910052751 metal Inorganic materials 0.000 claims description 7
- 239000002184 metal Substances 0.000 claims description 7
- 230000001678 irradiating effect Effects 0.000 claims description 6
- 229920001665 Poly-4-vinylphenol Polymers 0.000 claims description 5
- 229920000620 organic polymer Polymers 0.000 claims description 3
- 239000011248 coating agent Substances 0.000 claims description 2
- 238000000576 coating method Methods 0.000 claims description 2
- 238000000151 deposition Methods 0.000 claims description 2
- 238000007641 inkjet printing Methods 0.000 claims description 2
- 238000004528 spin coating Methods 0.000 claims description 2
- 238000005507 spraying Methods 0.000 claims description 2
- 238000000137 annealing Methods 0.000 abstract description 19
- 238000010438 heat treatment Methods 0.000 abstract description 16
- 238000012805 post-processing Methods 0.000 abstract description 3
- 230000009286 beneficial effect Effects 0.000 abstract 1
- 239000010410 layer Substances 0.000 description 39
- 230000008569 process Effects 0.000 description 14
- 239000000463 material Substances 0.000 description 6
- 239000004642 Polyimide Substances 0.000 description 4
- 229920001721 polyimide Polymers 0.000 description 4
- 238000011160 research Methods 0.000 description 4
- 239000000976 ink Substances 0.000 description 3
- 239000002346 layers by function Substances 0.000 description 3
- 239000012044 organic layer Substances 0.000 description 3
- 238000007639 printing Methods 0.000 description 3
- 229910021417 amorphous silicon Inorganic materials 0.000 description 2
- 238000006243 chemical reaction Methods 0.000 description 2
- 150000001875 compounds Chemical class 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 239000010408 film Substances 0.000 description 2
- 239000004973 liquid crystal related substance Substances 0.000 description 2
- 238000004151 rapid thermal annealing Methods 0.000 description 2
- 230000003321 amplification Effects 0.000 description 1
- 230000000903 blocking effect Effects 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 238000001816 cooling Methods 0.000 description 1
- 230000008878 coupling Effects 0.000 description 1
- 238000010168 coupling process Methods 0.000 description 1
- 238000005859 coupling reaction Methods 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 238000001514 detection method Methods 0.000 description 1
- 238000004146 energy storage Methods 0.000 description 1
- 238000001914 filtration Methods 0.000 description 1
- 229910052732 germanium Inorganic materials 0.000 description 1
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 229910000856 hastalloy Inorganic materials 0.000 description 1
- 238000009413 insulation Methods 0.000 description 1
- 230000010354 integration Effects 0.000 description 1
- 238000012423 maintenance Methods 0.000 description 1
- 229910044991 metal oxide Inorganic materials 0.000 description 1
- 150000004706 metal oxides Chemical class 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000003199 nucleic acid amplification method Methods 0.000 description 1
- 238000013086 organic photovoltaic Methods 0.000 description 1
- 238000007747 plating Methods 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K10/00—Organic devices specially adapted for rectifying, amplifying, oscillating or switching; Organic capacitors or resistors having potential barriers
- H10K10/40—Organic transistors
- H10K10/46—Field-effect transistors, e.g. organic thin-film transistors [OTFT]
- H10K10/462—Insulated gate field-effect transistors [IGFETs]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67098—Apparatus for thermal treatment
- H01L21/67115—Apparatus for thermal treatment mainly by radiation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L28/00—Passive two-terminal components without a potential-jump or surface barrier for integrated circuits; Details thereof; Multistep manufacturing processes therefor
- H01L28/40—Capacitors
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Health & Medical Sciences (AREA)
- Toxicology (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Thin Film Transistor (AREA)
- Electrodes Of Semiconductors (AREA)
Abstract
The invention relates to a method for rapidly preparing an organic electronic component, which comprises the steps of forming a first conducting layer on a flexible substrate; post-processing the first conductive layer; forming an insulating layer on the post-treated conductive layer; carrying out post-treatment on the insulating layer; forming a second conductive layer on the post-processed insulating layer; carrying out post-treatment on the second conductive layer; forming a semiconductor layer on the treated second conductive layer; and carrying out post-treatment on the semiconductor layer. According to the invention, after-treatment of the thin film can be completed within a few seconds by irradiation of a halogen tungsten lamp, the after-treatment time in the whole transistor preparation process is shortened to 15 seconds from 3 hours in the past by traditional heating annealing, and the performances of the obtained electrode layer and the obtained insulating layer are equivalent to those of the traditional heating annealing. The method shortens the time required by the preparation of the organic electronic component, greatly improves the production efficiency and is beneficial to industrialization.
Description
Technical Field
The invention relates to the field of manufacturing of organic electronic components, in particular to the field of manufacturing of organic thin film transistors and capacitors, and more particularly to a post-treatment process of functional layers in electronic components such as thin film transistors and capacitors.
Background
Electronic components include electronic components and electronic devices, wherein the electronic components do not generate electrons, and have no control and conversion effects on voltage and current, so the electronic components are also called passive devices, such as resistors, capacitors, inductors and the like; electronic devices are also called active devices, such as transistors, tubes, integrated circuits, because they can generate electrons and have control and conversion functions (detection, rectification, amplification, switching, voltage regulation, signal modulation) on voltage and current.
Capacitors and transistors are two common electronic components used in the display technology field. The capacitor is an energy storage element consisting of two mutually insulated and close conductors and a layer of non-conductive insulating medium in the middle, and plays roles of tuning, oscillating, blocking, filtering, coupling and bypassing in a circuit. A transistor (transistor) is a solid semiconductor device, and in 1947, a point contact type germanium transistor was developed by a research group consisting of shore, buton and brayton, from which a research heat of replacing a large-sized, power-consuming electron tube with a relatively small, low-power-consuming electronic device was started. In 1961, the paul-wilma research group of the american radio corporation first proposed the concept of thin film transistors, which were constructed by vapor-plating semiconductor material on an insulating layer, and this technology was implemented to construct thousands of transistors on a single substrate of postage stamp size, greatly increasing the integration level of the transistors.
At present, a thin film transistor is a core element of a flat panel display, and a thin film transistor liquid crystal display is an important member of a liquid crystal display, and is widely applied to the fields of televisions, notebook computers, monitors, mobile phones and the like, so that the aspects of improving the performance of the transistor, optimizing the preparation process, improving the production efficiency, reducing the cost and the like are hot spots of research in the field. In the process of manufacturing a thin film transistor, heat treatment or annealing is generally required after the functional layer is deposited. Annealing the metal electrode layer may increase the crystallinity of the metal layer, thereby increasing the conductivity of the electrode. The organic layer is subjected to heat treatment, so that the internal stress of the organic layer material and the defects caused in the forming process can be eliminated, and the plasticity and the flexibility of the material are improved.
In the prior art, high-temperature furnace annealing or rapid thermal annealing is generally adopted for the heat treatment of the metal electrode or the organic layer. The high-temperature furnace annealing requires heating and cooling processes for hours, has long process time and is not suitable for preparing devices with flexible substrates or glass substrates; although the instantaneous temperature is higher by adopting rapid thermal annealing, the time is short, the flexible substrate cannot be damaged by a heat source, only special annealing equipment needs to be added, and the online equipment cost and the labor cost are increased.
In order to solve the above problems, various attempts have been made in the prior art, such as in CN106128944A, when preparing a metal oxide thin film transistor array substrate, post-processing an active layer with ultraviolet light, microwave, or infrared light is performed, but the post-processing time and temperature are not further described; the array substrate preparation method disclosed in CN103390592A relates to a process of performing post-treatment on an amorphous silicon layer material by a laser irradiation process to crystallize the amorphous silicon layer material, but there are certain requirements on the line shape of a laser beam and the angle between the laser beam and a layer to be treated in the laser irradiation. CN102214737B discloses a preparation method of a compound film for a solar cell, wherein the compound film is placed in a resistance type heat source and a halogen tungsten lamp heat source region to be annealed for a certain time respectively, the annealing time is 1-6 min, the annealing temperature is 500-600 ℃, but the whole process is carried out in a closed state, and the equipment maintenance cost is high.
Therefore, the problem to be solved in the preparation process of the organic electronic component is to provide a simple and feasible method which can be operated at low temperature and can be used for rapid post-treatment.
Disclosure of Invention
The invention aims to solve the technical problem of providing a simple and easy method which can be operated at low temperature and can carry out rapid post-treatment, and the method is used for carrying out post-treatment on a functional layer in the preparation process of an organic electronic component, thereby improving the production efficiency of the whole process.
In order to solve the above problems, the present inventors have made extensive attempts to provide a method for rapidly manufacturing an organic electronic component, comprising the steps of:
a) forming a first conductive layer on a flexible substrate;
b) carrying out post-treatment on the first conductive layer;
c) forming an insulating layer on the post-treated conductive layer;
d) carrying out post-treatment on the insulating layer;
e) forming a second conductive layer on the post-processed insulating layer;
f) carrying out post-treatment on the second conductive layer;
g) forming a semiconductor layer on the treated second conductive layer;
h) post-treating the semiconductor layer, wherein
The b) post-treating the first conductive layer, the d) post-treating the insulating layer, the f) post-treating the second conductive layer, and the h) post-treating the semiconductor layer means that the layer is irradiated under a tungsten halogen lamp.
The method for depositing each layer is selected from spin coating, spray coating, blade coating or ink-jet printing.
Preferably, the first conductive layer is a metallic conductive layer, more preferably a silver layer.
Preferably, the insulating layer is an organic polymer insulating layer, more preferably poly (4-vinylphenol).
Preferably, the second conductive layer is a metallic conductive layer, more preferably a silver layer.
The power of the halogen tungsten lamp used in the technical scheme of the invention is 100W-500W.
Preferably, the distance between the halogen tungsten lamp and the layer to be post-treated is 0.5-2.0 cm.
Preferably, the tungsten halogen lamp irradiates any layer for 3s to 30 min.
Preferably, the organic electronic component is an organic thin film transistor.
Preferably, the organic electronic component is a capacitor.
In the technical scheme, the electrode layer and the insulating layer of the electronic component are subjected to post-treatment by irradiation of the halogen tungsten lamp in an open environment at room temperature, so that the technical effects of rapid annealing, equipment simplification and process simplification are realized.
In addition, the scheme can also be used in the preparation process of other organic electronic components, such as organic photovoltaic devices and the like.
Detailed Description
In order to make the aforementioned and other objects, features and advantages of the present invention comprehensible, preferred embodiments accompanied with figures are described in detail below.
Example 1
Printing silver on the polyimide substrate, using silver ink from Kunshan Haas (available from Kunshan Haas electronics, Inc., model Jet-600C); the annealing procedure, which should be thermally annealed at 150 ℃ for 10 minutes on a heating table, is completed by irradiating a 500W tungsten halogen lamp at a height of 2cm from the substrate for 5 seconds and instantaneously reaching 300 ℃.
PVP (poly (4-vinylphenol)) was printed on a polyimide substrate and irradiated with a 500W tungsten halogen lamp for 15 seconds at a height of 2cm from the substrate, thereby completing an annealing process that should be heat annealed at 180 ℃ for 2 hours on a heating stage.
The capacitance data of the capacitor devices with silver and PVP as insulation after the treatment according to the above conditions were tested separately and compared with the properties of the materials obtained by the conventional heat post-treatment, as shown in tables 1 and 2.
TABLE 1 comparison of capacitance values of PVP layers obtained by conventional annealing and tungsten halogen lamp annealing
| Printing PVP ink on polyimide substrate | Time of heating | Capacitor (PF) |
| Conventional heating mode (heating table 150 degree C) | 2h | 10.1 |
| Halogen tungsten lamp irradiation heating mode (500W0.5cm height) | 7s | 9.8 |
TABLE 2 comparison of the square resistance values of the conductive layers obtained by conventional thermal annealing and halogen tungsten lamp annealing
| Printing of Haisi-Ag inks on polyimide substrates | Time of heating | Square resistance (omega/□) |
| Conventional heating mode (heating table 150 degree C) | 20min | 0.89 |
| Halogen tungsten lamp irradiation heating mode (500W0.5cm height) | 3s | 0.92 |
From the whole process flow, the time required by the post-treatment in the whole transistor preparation process is shortened by irradiating the emitter with the halogen tungsten lamp, so that the preparation efficiency of the transistor is improved, and as can be seen from table 3, the annealing time required in the whole transistor preparation process is shortened from nearly 3h to 15s after the halogen tungsten lamp annealing process is adopted.
TABLE 3 time required for different annealing regimes in the transistor fabrication process
In Table 4 are the exposure times of PVP (poly (4-vinylphenol)) to tungsten halogen lamps of different heights and different wattages.
Table 5 shows the time of exposure of hastelloy silver to tungsten halogen lamps of different heights and wattages.
TABLE 4 duration of exposure of PVP (poly (4-vinylphenol)) to tungsten halogen lamps of different heights and wattages
TABLE 5 duration of silver Haas irradiated under halogen tungsten lamps of different heights and different wattages
The above is only a preferred embodiment of the present invention, and the protection scope of the present invention should not be limited thereby, and those skilled in the art can easily make equivalent changes and modifications to the claims and the content of the present invention without departing from the principle of the present invention, and still fall into the protection scope of the present patent application.
Claims (13)
1. A method for rapidly preparing an organic electronic component comprises the following steps:
a) forming a first conductive layer on a flexible substrate;
b) post-treating the first conducting layer, specifically, irradiating the first conducting layer for 3 seconds at a height of 0.5cm away from the flexible substrate by using a halogen tungsten lamp;
c) forming an insulating layer on the post-treated conductive layer;
d) performing post-treatment on the insulating layer, specifically, irradiating the insulating layer for 7 seconds at a height of 0.5cm from the flexible substrate by using a halogen tungsten lamp;
e) forming a second conductive layer on the post-processed insulating layer;
f) post-treating the second conducting layer, specifically, irradiating the second conducting layer for 3 seconds at a height of 0.5cm away from the flexible substrate by using a halogen tungsten lamp;
g) forming a semiconductor layer on the post-processed second conductive layer;
h) and carrying out post-treatment on the semiconductor layer, specifically, irradiating the semiconductor layer for 2 seconds at a height of 0.5cm from the flexible substrate by adopting a halogen tungsten lamp.
2. A method for rapid fabrication of organic electronic components as claimed in claim 1, wherein the method for depositing the layers is selected from spin coating, spray coating, blade coating or ink jet printing.
3. A method for rapid preparation of organic electronic components as claimed in claim 1, wherein the first conductive layer is a metal conductive layer.
4. The method for rapidly manufacturing an organic electronic component as claimed in claim 3, wherein the metal conductive layer is a silver layer.
5. The method for rapidly manufacturing an organic electronic component as claimed in claim 1, wherein the insulating layer is an organic polymer insulating layer.
6. The method for rapidly manufacturing an organic electronic component as claimed in claim 5, wherein the organic polymer is poly (4-vinylphenol).
7. A method for rapid preparation of organic electronic components as claimed in claim 1, wherein the second conductive layer is a metal conductive layer.
8. The method for rapidly manufacturing an organic electronic component as claimed in claim 7, wherein the metal conductive layer is a silver layer.
9. The method for rapidly manufacturing an organic electronic component as claimed in claim 1, wherein the power of the tungsten halogen lamp is 100W-500W.
10. The method for rapidly manufacturing an organic electronic component as claimed in claim 9, wherein the distance between the tungsten halogen lamp and the layer to be post-processed is 0.5-2.0 cm.
11. The method for rapidly manufacturing an organic electronic component as claimed in claim 10, wherein the irradiation time is 3s to 30 min.
12. The method for rapidly manufacturing an organic electronic component as claimed in claim 1, wherein the organic electronic component is an organic thin film transistor.
13. A method for rapidly manufacturing an organic electronic component as claimed in claim 1, wherein the organic electronic component is a capacitor.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201710674674.3A CN107425120B (en) | 2017-08-09 | 2017-08-09 | Method for rapidly preparing organic electronic component |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201710674674.3A CN107425120B (en) | 2017-08-09 | 2017-08-09 | Method for rapidly preparing organic electronic component |
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| Publication Number | Publication Date |
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| CN107425120A CN107425120A (en) | 2017-12-01 |
| CN107425120B true CN107425120B (en) | 2021-01-12 |
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| CN201710674674.3A Active CN107425120B (en) | 2017-08-09 | 2017-08-09 | Method for rapidly preparing organic electronic component |
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Family Cites Families (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP1998374A3 (en) * | 2005-09-29 | 2012-01-18 | Semiconductor Energy Laboratory Co, Ltd. | Semiconductor device having oxide semiconductor layer and manufacturing method thereof |
| CN102842620A (en) * | 2012-09-11 | 2012-12-26 | 京东方科技集团股份有限公司 | Thin film transistor and manufacturing method thereof as well as array substrate and display device |
| JP2014135474A (en) * | 2012-12-14 | 2014-07-24 | Nippon Hoso Kyokai <Nhk> | Thin film transistor manufacturing method |
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