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CN107365971B - A kind of rare earth-transition alloy firm and preparation method thereof with high vertical exchange coupled field - Google Patents

A kind of rare earth-transition alloy firm and preparation method thereof with high vertical exchange coupled field Download PDF

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CN107365971B
CN107365971B CN201710729664.5A CN201710729664A CN107365971B CN 107365971 B CN107365971 B CN 107365971B CN 201710729664 A CN201710729664 A CN 201710729664A CN 107365971 B CN107365971 B CN 107365971B
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oxide layer
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CN107365971A (en
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王可
王亚宏
庄凤江
苏少坚
徐展
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Huaqiao University
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    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/34—Sputtering
    • C23C14/35—Sputtering by application of a magnetic field, e.g. magnetron sputtering
    • C23C14/352—Sputtering by application of a magnetic field, e.g. magnetron sputtering using more than one target
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/0021—Reactive sputtering or evaporation
    • C23C14/0036—Reactive sputtering
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
    • C23C14/08—Oxides
    • C23C14/081—Oxides of aluminium, magnesium or beryllium
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
    • C23C14/08—Oxides
    • C23C14/083—Oxides of refractory metals or yttrium
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
    • C23C14/10—Glass or silica
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
    • C23C14/14—Metallic material, boron or silicon
    • C23C14/16—Metallic material, boron or silicon on metallic substrates or on substrates of boron or silicon
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    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
    • C23C14/14—Metallic material, boron or silicon
    • C23C14/18—Metallic material, boron or silicon on other inorganic substrates
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Abstract

The invention discloses a kind of rare earth-transition alloy firm and preparation method thereof with high vertical exchange coupled field, including metal buffer layer, nonmagnetic oxide layer, alloy-layer and the coat of metal successively sputtered on substrate by magnetron sputtering；Nonmagnetic oxide layer growth thickness is controlled by adjusting sputtering time, to adjust the alloy-layer degree of oxidation being in direct contact with it, the spin-exchange-coupled system between the oxidized portion and not oxidized part of alloy-layer is formed, to adjust the size of oxide layer degree and vertical exchange coupled field.

Description

A kind of rare earth-transition alloy firm and its preparation with high vertical exchange coupled field Method
Technical field
The present invention relates to a kind of rare earth-transition alloy firm and preparation method thereof with high vertical exchange coupled field.
Background technique
Exchange bias effect is the magnetic hysteresis that the double-deck system of Ferromagnetic/Antiferromagnetic (FM/AFM) makes ferromagnetic layer after magnetic-field cooling Loop line generates offset along magnetic direction, unidirectional anisotropy, the increased magnetization phenomenon of simultaneous coercivity occurs.Exchange is inclined Set the direct spin-exchange-coupled pinning or so from Ferromagnetic/Antiferromagnetic interface.Storage can be improved using exchange bias effect The sensibility of thermal stability and magnetic recording read head in device, the electric current for reducing spin polarized current driving Magnetic moment reversal are close Degree, plays a significant role in high density magnetic storage and magnetic sensor device.
Conventional magneto-optic recording medium Ferrimagnetic heavy rare earth-transition group alloy film material is currently widely used for high density magnetoelectricity Device and ultrafast magnetic overturn field.In heavy rare earth-Transition-metal Alloys material, the magnetic moment of rare earth element and transition elements sublattice is anti- It is arranged in parallel, cause in this kind of material to correspond to this compensation point ingredient there may be a specific ambient-temperature compensation point ingredient The Net magnetic moment of alloy firm is that zero coercivity near infinite is big when room temperature.It finds a kind of with big perpendicular magnetic anisotropic and height Thermal stability rare earth-transition alloy firm, and be applied to for vertical magnetoelectronic devices and magnetic sensing element nuclear structure material The manufacturing field of material and ultrafast magnetic inversion medium is of great significance, and is possible to generate huge economic benefits.
Summary of the invention
It is of the invention to provide a kind of rare earth-transition alloy firm with high vertical exchange coupled field and its preparation side Method.
The technical solution adopted by the present invention to solve the technical problems is: providing a kind of with high vertical exchange coupled field Rare earth-transition alloy firm, including be cascading metal buffer layer, for changing vertical exchange coupled field size Nonmagnetic oxide layer, exchange coupling layer and coat of metal；
The nonmagnetic oxide layer material includes MgO, SiO2, Al2O3And Ta2O5；
The exchange coupling layer is that oxide layer and non-oxide layer are combined closely the compound system to be formed, the oxide layer material For TbFeCoO, DyFeCoO or GdFeCoO alloy, the non-oxide layer is TbFeCo, DyFeCo or GdFeCo alloy, the oxygen Change layer to be generated by the nonmagnetic oxide layer direct oxidation alloy；；The ingredient ratio of Tb, Dy or Gd element is in the non-oxide layer 24.5-25.5%.
In a preferred embodiment of the present invention, the nonmagnetic oxide layer changes to adjust oxygen by thickness and material Change layer degree, to change the size of vertical exchange coupled field.
In a preferred embodiment of the present invention, the nonmagnetic oxide thickness degree 0.5-5.0nm, the spin-exchange-coupled thickness Spend 5-30nm.
In a preferred embodiment of the present invention, the metal buffer layer, coat of metal material are Ta, Pd or Pt, thickness 2-10nm。
The present invention also provides a kind of preparation method of rare earth-transition alloy firm with high vertical exchange coupled field, Include the following steps:
(1) by the combined tessera target or ternary of high-purity rare earth Tb, Dy or Gd patch and iron cobalt FeCo alloy target composition TbFeCo, DyFeCo or GdFeCo alloys target are put into the target position of magnetic control co-sputtering room, the ingredient of Tb, Dy or Gd element in alloys target Than for 24.5-25.5%；
(2) the Si substrate placement after cleaning, drying is fixed on the chip bench of vacuum sputtering room；
(3) it is evacuated to sputtering vacuum chamber and reaches vacuum degree 1 × 10-5Pa hereinafter, logical high purity argon as working gas, Argon flow is 40-80sccm, and sputtering operating air pressure is set as 0.1-0.5Pa；
(4) one layer of metal buffer layer, sputter rate 0.1-0.125nm/ are sputtered on substrate by d.c. sputtering method S reaches 2-10nm by adjusting sputtering time control metal buffer layer growth thickness range；
(5) a nonmagnetic oxide layer, sputter rate 0.020- are sputtered in above-mentioned layer body surface face by RF sputtering method 0.025nm/s reaches 0.5-5.0nm by adjusting sputtering time control nonmagnetic oxide layer growth thickness range；
(6) alloy-layer, sputter rate 0.16-0.18nm/ are sputtered in above-mentioned layer body surface face by RF sputtering method S reaches 5-30nm by adjusting sputtering time control alloy layer growth thickness range；
(7) one layer of coat of metal, sputter rate 0.1- are sputtered in above-mentioned layer body surface face by d.c. sputtering method 0.125nm/s reaches 2-10nm by adjusting sputtering time control coat of metal growth thickness range.
In a preferred embodiment of the present invention, the step (5) exchanges with step (6) sequence.
In a preferred embodiment of the present invention, nonmagnetic oxide layer growth thickness is controlled by adjusting sputtering time, to adjust The alloy-layer degree of oxidation being in direct contact with it is saved, the spin-exchange-coupled between the oxidized portion of alloy-layer and not oxidized part is formed System, to adjust the size of oxide layer degree and vertical exchange coupled field.
Compared with prior art, the present invention has the advantage that using rare earth element in alloy firm it is easy to oxidize and The oxidation of oxide layer and rare earth-transition alloy interface contact position, the rare earth-transition of ingredient near single layer ambient-temperature compensation point The similar compound system with spin-exchange-coupled effect can be generated in alloy firm, when room temperature just has apparent vertical off setting Effect has biggish application prospect.Thin oxide layer material is compatible with magnetoelectronic devices material, and the thickness of thin oxide layer can also be used To adjust the size of the vertical exchange coupled field.Preparation method of the present invention is simple, at low cost, can be applied to vertical magnetoelectronic devices, In the field of magnetic sensing element and ultrafast magnetic inversion technology.
Detailed description of the invention
Fig. 1 is a) 1 control group abnormality Hall Curve of embodiment；B) 1 experimental group abnormality Hall Curve of embodiment；
Fig. 2 is a) 2 control group abnormality Hall Curve of embodiment；B) 2 experimental group abnormality Hall Curve of embodiment.
Specific embodiment
The contents of the present invention are illustrated with reference to the accompanying drawings and examples:
Embodiment 1
(1) the ternary GdFeCo of the rare-earth Gd patch by purity more than or equal to 99.9% and iron cobalt FeCo alloy target composition is closed Gold target is put into the target position of magnetic control co-sputtering room, and the ingredient ratio of Gd is 25.5% in alloys target, partially rich close to ambient-temperature compensation point ingredient Rare earth；The ingredient is than being atomic percentage that Gd element accounts for alloy；Target of the target as magnetron sputtering, installation are fixed In on the sputtering target stand of magnetron sputtering chamber.
(2) the Si substrate placement after cleaning, drying is fixed on the chip bench of vacuum sputtering room；
(3) it is evacuated to sputtering vacuum chamber and reaches vacuum degree 1 × 10-5Pa hereinafter, logical high purity argon as working gas, Argon flow is 40-80sccm, and sputtering operating air pressure is set as 0.1-0.5Pa；
(4) one layer of Pd is sputtered as metal buffer layer on substrate by d.c. sputtering method, sputter rate is 0.125nm/s, control metal buffer layer growth thickness are 3nm；
(5) MgO layer, sputter rate 0.022nm/s, control are sputtered in above-mentioned layer body surface face by RF sputtering method MgO layer growth thickness is 1nm；Nonmagnetic oxide layer growth thickness can be controlled by adjusting sputtering time, adjusting directly connects The alloy-layer degree of oxidation of touching forms the spin-exchange-coupled system between the oxidized portion of alloy-layer and not oxidized part, to adjust The size for saving oxide layer degree and vertical exchange coupled field, reaching preparation, there is the rare earth-of high vertical exchange coupled field excessively to close The purpose of gold thin film.
(6) GdFeCo alloy-layer, sputter rate 0.175nm/ are sputtered in above-mentioned layer body surface face by RF sputtering method S, controlling its growth thickness is 21nm；
(7) one layer of Ta is sputtered as coat of metal in above-mentioned layer body surface face by d.c. sputtering method, sputter rate is 0.125nm/s, controlling its growth thickness is 2nm.
According to above-mentioned steps sequence (1)-(7), it is thin to prepare a kind of rare earth-transition alloy with high vertical exchange coupled field Film is experimental group；Experimental group preparation film, including be cascading metal buffer layer, for changing vertical exchange coupling Close nonmagnetic oxide layer, exchange coupling layer and the coat of metal of field size；
The nonmagnetic oxide layer material is MgO, with a thickness of 1nm；In the present embodiment, the nonmagnetic oxide layer passes through certainly The change of body thickness adjusts oxide layer degree, to change the size of the vertical exchange coupled field of alloy firm, to prepare The alloy firm of high vertical exchange coupled field；
The MgO layer of experiment cluster film makes alloy-layer reach partial oxidation, what formation oxide layer and non-oxide layer were combined closely Compound system, i.e. exchange coupling layer, thickness 21nm；The oxide layer material is GdFeCoO alloy, and the non-oxide layer is GdFeCo alloy, the oxide layer are generated by the nonmagnetic oxide layer direct oxidation alloy；In the non-oxide layer Tb, Dy or The ingredient ratio of Gd element is 25.5%.
The metal buffer layer material is Ta, with a thickness of 3nm；Coat of metal material is Ta, with a thickness of 2nm.
It according to above-mentioned steps sequence, omits step (5), prepares the alloy firm without MgO layer, be control group；The gold of control group Belong to buffer layer and coat of metal protection alloy-layer is not affected by oxidation.
Please refer to Fig. 1, analyze experimental group and control group, obtain a result: control group shows as single layer and hands over without vertical Change coupling magnetic characteristic, the vertical exchange coupled field H that experimental group measurement generatesEXFor 9.9kOe.
Embodiment 2
(1) the ternary GdFeCo of the rare-earth Gd patch by purity more than or equal to 99.9% and iron cobalt FeCo alloy target composition is closed Gold target is put into the target position of magnetic control co-sputtering room, and the ingredient ratio of Gd is 24.5% in alloys target, partially rich close to ambient-temperature compensation point ingredient Transition；Target of the target as magnetron sputtering, is mounted on the sputtering target stand of magnetron sputtering chamber.
(2) the Si substrate placement after cleaning, drying is fixed on the chip bench of vacuum sputtering room；
(3) it is evacuated to sputtering vacuum chamber and reaches vacuum degree 1 × 10-5Pa hereinafter, logical high purity argon as working gas, Argon flow is 40-80sccm, and sputtering operating air pressure is set as 0.1-0.5Pa；
(4) one layer of Ta is sputtered as metal buffer layer, sputter rate 0.1nm/ on substrate by d.c. sputtering method S, control metal buffer layer growth thickness are 3nm；
(5) MgO layer, sputter rate 0.022nm/s, control are sputtered in above-mentioned layer body surface face by RF sputtering method MgO layer growth thickness is 1nm；
(6) GdFeCo alloy-layer, sputter rate 0.167nm/ are sputtered in above-mentioned layer body surface face by RF sputtering method S, controlling its growth thickness is 20nm；
(7) one layer of Ta is sputtered as coat of metal in above-mentioned layer body surface face by d.c. sputtering method, sputter rate is 0.1nm/s, controlling its growth thickness is 2nm.
According to above-mentioned steps sequence (1)-(7), it is thin to prepare a kind of rare earth-transition alloy with high vertical exchange coupled field Film is experimental group；Experimental group preparation film, including be cascading metal buffer layer, for changing vertical exchange coupling Close nonmagnetic oxide layer, exchange coupling layer and the coat of metal of field size；
The nonmagnetic oxide layer material is MgO, with a thickness of 1nm；In the present embodiment, the nonmagnetic oxide layer passes through certainly The change of body thickness adjusts oxide layer degree, to change the size of the vertical exchange coupled field of alloy firm, to prepare The alloy firm of high vertical exchange coupled field；
The MgO layer of experiment cluster film makes alloy-layer reach partial oxidation, what formation oxide layer and non-oxide layer were combined closely Compound system, i.e. exchange coupling layer, thickness 20nm；The oxide layer material is GdFeCoO alloy, and the non-oxide layer is GdFeCo alloy, the oxide layer are generated by the nonmagnetic oxide layer direct oxidation alloy；In the non-oxide layer Tb, Dy or The ingredient ratio of Gd element is 24.5%.
The metal buffer layer material is Ta, with a thickness of 3nm；Coat of metal material is Ta, with a thickness of 2nm.
It according to above-mentioned steps sequence, omits step (5), prepares the alloy firm without MgO layer, be control group；The gold of control group Belong to buffer layer and coat of metal protection alloy-layer is not affected by oxidation.
Please refer to Fig. 2, analyze experimental group and control group, obtain a result: control group shows as single layer and hands over without vertical Change coupling magnetic characteristic, the vertical exchange coupled field H that experimental group measurement generatesEXFor 8.6kOe.
The above is only the preferred embodiment of the present invention, the range implemented of the present invention that therefore, it cannot be limited according to, i.e., according to Equivalent changes and modifications made by the invention patent range and description, should still be within the scope of the present invention.

Claims (3)

1. a kind of preparation method of the rare earth-transition alloy firm with high vertical exchange coupled field, it is characterised in that: including such as Lower step:
(1) by the combined tessera target or ternary of high-purity rare earth Tb, Dy or Gd patch and iron cobalt FeCo alloy target composition TbFeCo, DyFeCo or GdFeCo alloys target are put into the target position of magnetic control co-sputtering room, the ingredient of Tb, Dy or Gd element in alloys target Than for 24.5-25.5%；
(2) the Si substrate placement after cleaning, drying is fixed on the chip bench of vacuum sputtering room；
(3) it is evacuated to sputtering vacuum chamber and reaches vacuum degree 1 × 10-5Pa is hereinafter, lead to high purity argon as working gas, argon gas Flow is 40-80sccm, and sputtering operating air pressure is set as 0.1-0.5Pa；
(4) one layer of metal buffer layer is sputtered on substrate by d.c. sputtering method, sputter rate 0.1-0.125nm/s leads to Adjustment sputtering time control metal buffer layer growth thickness range is crossed up to 2-10nm；
(5) a nonmagnetic oxide layer, sputter rate 0.020- are sputtered in above-mentioned layer body surface face by RF sputtering method 0.025nm/s reaches 0.5-5.0nm by adjusting sputtering time control nonmagnetic oxide layer growth thickness range；
(6) alloy-layer is sputtered in above-mentioned layer body surface face by RF sputtering method, sputter rate 0.16-0.18nm/s leads to Adjustment sputtering time control alloy layer growth thickness range is crossed up to 5-30nm；
(7) one layer of coat of metal, sputter rate 0.1- are sputtered in above-mentioned layer body surface face by d.c. sputtering method 0.125nm/s reaches 2-10nm by adjusting sputtering time control coat of metal growth thickness range；
Prepared rare earth-transition alloy firm includes the metal buffer layer being cascading, for changing vertical exchange coupling Nonmagnetic oxide layer, exchange coupling layer and the coat of metal of field size are closed, the metal buffer layer, coat of metal material are Ta, Pd or Pt；The nonmagnetic oxide layer material includes MgO, SiO2, Al2O3And Ta2O5；The exchange coupling layer is oxidation Layer and non-oxide layer are combined closely the compound system to be formed, and the oxide layer material is that TbFeCoO, DyFeCoO or GdFeCoO are closed Gold, the non-oxide layer are TbFeCo, DyFeCo or GdFeCo alloy, and the oxide layer is by the direct oxygen of nonmagnetic oxide layer Alloy generates；The ingredient ratio of Tb, Dy or Gd element is 24.5-25.5% in the non-oxide layer.
2. a kind of preparation method of the rare earth-transition alloy firm with high vertical exchange coupled field according to claim 1, It is characterized by: the step (5) exchanges with step (6) sequence.
3. a kind of preparation side of rare earth-transition alloy firm with high vertical exchange coupled field according to claim 1 or claim 2 Method, it is characterised in that: nonmagnetic oxide layer growth thickness is controlled by adjusting sputtering time, to adjust the conjunction being in direct contact with it Layer gold degree of oxidation forms the spin-exchange-coupled system between the oxidized portion of alloy-layer and not oxidized part, to adjust oxidation The size of layer degree and vertical exchange coupled field.
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