CN107305147A - Temperature sensor and the temperature sensor calibration method with high accuracy - Google Patents
Temperature sensor and the temperature sensor calibration method with high accuracy Download PDFInfo
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- CN107305147A CN107305147A CN201710269135.1A CN201710269135A CN107305147A CN 107305147 A CN107305147 A CN 107305147A CN 201710269135 A CN201710269135 A CN 201710269135A CN 107305147 A CN107305147 A CN 107305147A
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- temperature
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01K—MEASURING TEMPERATURE; MEASURING QUANTITY OF HEAT; THERMALLY-SENSITIVE ELEMENTS NOT OTHERWISE PROVIDED FOR
- G01K7/00—Measuring temperature based on the use of electric or magnetic elements directly sensitive to heat ; Power supply therefor, e.g. using thermoelectric elements
- G01K7/01—Measuring temperature based on the use of electric or magnetic elements directly sensitive to heat ; Power supply therefor, e.g. using thermoelectric elements using semiconducting elements having PN junctions
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01K—MEASURING TEMPERATURE; MEASURING QUANTITY OF HEAT; THERMALLY-SENSITIVE ELEMENTS NOT OTHERWISE PROVIDED FOR
- G01K15/00—Testing or calibrating of thermometers
- G01K15/005—Calibration
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01K—MEASURING TEMPERATURE; MEASURING QUANTITY OF HEAT; THERMALLY-SENSITIVE ELEMENTS NOT OTHERWISE PROVIDED FOR
- G01K7/00—Measuring temperature based on the use of electric or magnetic elements directly sensitive to heat ; Power supply therefor, e.g. using thermoelectric elements
- G01K7/16—Measuring temperature based on the use of electric or magnetic elements directly sensitive to heat ; Power supply therefor, e.g. using thermoelectric elements using resistive elements
-
- G—PHYSICS
- G05—CONTROLLING; REGULATING
- G05F—SYSTEMS FOR REGULATING ELECTRIC OR MAGNETIC VARIABLES
- G05F3/00—Non-retroactive systems for regulating electric variables by using an uncontrolled element, or an uncontrolled combination of elements, such element or such combination having self-regulating properties
- G05F3/02—Regulating voltage or current
- G05F3/08—Regulating voltage or current wherein the variable is dc
- G05F3/10—Regulating voltage or current wherein the variable is dc using uncontrolled devices with non-linear characteristics
- G05F3/16—Regulating voltage or current wherein the variable is dc using uncontrolled devices with non-linear characteristics being semiconductor devices
- G05F3/20—Regulating voltage or current wherein the variable is dc using uncontrolled devices with non-linear characteristics being semiconductor devices using diode- transistor combinations
- G05F3/26—Current mirrors
- G05F3/267—Current mirrors using both bipolar and field-effect technology
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- General Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Nonlinear Science (AREA)
- Electromagnetism (AREA)
- Radar, Positioning & Navigation (AREA)
- Automation & Control Theory (AREA)
- Measuring Temperature Or Quantity Of Heat (AREA)
- Control Of Electrical Variables (AREA)
Abstract
The present invention discloses a kind of temperature sensor, and the temperature sensor includes：First current generator, first current generator is configured to produce and PTAT (PTAT) electric current；Second current generator, second current generator is configured to produce inverse PTAT (IPTAT) electric current, and the PTAT current and IPTAT electric currents are combined to form the reference current with the sensitivity on temperature；Multiple current mirrors, the sensitivity and gain of the current mirror to adjust the reference current；And variable resistance, the variable resistance based on produced electric current to set output calibration voltage.
Description
Technical field
Embodiment described herein is related to circuit and the method for calibrating temperature sensor.
Background technology
In the design for the electronic circuit of various applications, monitored using heat monitoring and heat for semiconductor subassembly (example
Such as, integrated circuit) avoid producing may negatively affect it is most important for the higher temperatures of various circuit units.Temperature monitoring
Available for a variety of applications, for example, radar, radar can bear the operation temperature in the range of -40 DEG C to 150 DEG C.Integrated temperature is sensed
Device usually uses the framework based on diode and Δ VBE (Δ base-emitter voltage) is used between bipolar junction transistor pair
Mensuration, to limit the voltage with PTAT (PTAT).
In order to obtain the good degree of accuracy, background technology design can need to use at least two or three temperature insertion points
Big calibration algorithm calibrates temperature sensor.For the dynamic model of Δ VBE in dilation technique field (for example, radar application)
Enclose, greater number of diode is used, this may cause the inaccurate of the complicated and temperature sensor of circuit.When using a large amount of
During diode, mismatch model is set up difficult and extremely inaccurate.
The example of the circuit of temperature in use monitoring includes having such as time-to-digit converter (TDC) or digital control vibration
The all-digital phase-lock loop (ADPLL) of device (DCO) component, the all-digital phase-lock loop can show some of temperature during use
Drift.This drift may cause the drift or spuious at parameter problem, including output.Detect that possible overheat condition can early
Occur to prevent locking system failure, such as parameter degradation and irreversible damage.Efficiently and accurately temperature sensor school can be used
Standard ensures to detect early.
In previous circuit design, in order to realize the good degree of accuracy, it is necessary to using at least two, three, or more
The great calibration algorithm of temperature insertion point.
The content of the invention
The brief overview of each exemplary embodiment is presented below.Some can be made in outlined below to simplify and save
Slightly, the general introduction is intended to protrude and introduces some aspects of various exemplary embodiments, but does not limit the scope of the invention.It is enough to permit
Perhaps those of ordinary skill in the art obtain and will be then rear using the detailed description of the exemplary embodiment of inventive concepts
Continuous part is presented.
Various embodiments described herein include a kind of temperature sensor, and the temperature sensor includes：First electric current
Generator, first current generator is configured to produce and PTAT (PTAT) electric current；Second current generator,
Second current generator is configured to produce inverse PTAT (IPTAT) electric current, and the PTAT current and IPTAT electric currents are combined with shape
Into the reference current with the sensitivity on temperature；Multiple current mirrors, the grade current mirror is to adjust the sensitive of reference current
Degree and gain；And variable resistance, the variable resistance based on produced electric current to set output calibration voltage.
Digitial controller can be configured to the adjustment of control electric current slope.Variable resistance can be by digitial controller control.
Multiple current mirrors may include multiple MOS transistors.Temperature sensor may include subtracter, and the subtracter is configured to control at least
One MOS transistor, to keep reference current constant.
Temperature sensor may include：First voltage source, the first voltage source with first value the first circuit part in,
The first voltage source to produce PTAT current and IPTAT electric currents, and the second voltage source, the second voltage source with higher than
In the second circuit part of the second value of first value, the second voltage source is configured to enable high output voltage to be calibrated.It is high
Voltage x current mirror can be placed between first voltage source and the second voltage source, at the output of support temperature sensor calibration circuit
High voltage.High voltage and current mirror can be bipolar transistor pair.
Temperature sensor may include multiple bipolar transistor transistors, to produce PTAT and IPTAT.
Various embodiments described herein may include a kind of method for calibrating temperature sensor, and this method includes：Production
Raw and PTAT (PTAT) electric current；Inverse PTAT (IPTAT) electric current is produced, PTAT current and IPTAT electric currents are combined
To form the reference current with the sensitivity on temperature；Adjust the sensitivity and gain of high reference electric current；And based on warp
The current slope of adjustment sets output calibration voltage.
This method may include to use digitial controller the tuned slope.
At least one transistor of digitial controller adjustable current mirror, to change the slope of electric current.
This method may include fine setting variable resistance to set the output calibration voltage of temperature sensor.
Various embodiments described herein may include a kind of method for calibrating temperature sensor, and this method includes：Production
The reference current of the raw sensitivity with temperature, the sensitivity of reference current is adjusted using multiple current mirrors, is made adjusted
Reference current flow through output resistor to produce the reference output voltage of temperature sensor, and adjusted using variable resistance
Reference output voltage.
This method may include the slope that reference current is adjusted using digitial controller.
This method may include to finely tune variable resistance using digitial controller.Fine setting variable resistance can compensate for multiple electric currents
Mismatch between mirror.
This method may include：Producing reference current includes producing and PTAT (PTAT) electric current and inverse PTAT
(IPTAT) electric current.This method may include to use multiple bipolar transistor transistors, to produce PTAT and IPTAT electric currents.
This method may include subtracter, and the subtracter is configured to control at least one MOS transistor, to keep with reference to electricity
Stream is constant.
Brief description of the drawings
Fig. 1 shows the schematic diagram of the PTAT and IPTAT reference current generators according to embodiment described herein；
Fig. 2 shows the curve map of the linear characteristic and relation according to the electric current of embodiment described herein；
Fig. 3 shows to calibrate the design of circuit according to the temperature sensor of embodiment described herein；
Fig. 4 shows to exemplify the flow chart of the method 400 of calibration temperature sensor according to implementation described herein；And
Fig. 5 shows flow chart the step of being performed by digitial controller according to embodiment described herein.
Embodiment
It should be understood that schema is only schematical and is not drawn to scale.It should also be understood that the identical ginseng used through schema
Examine label and indicate same or similar part.
Description and schema show the principle of various exemplary embodiments.It is therefore to be understood that those skilled in the art is by energy
Enough design various arrangements, although be not explicitly described or shown herein the grade arrangement, its embody the present invention principle and
It is included within the scope of the invention.In addition, all examples described herein be mainly clearly intended for teaching purpose with
The concept that auxiliary reader understands the principle of the present invention and provided by inventor, so that deepen the understanding to this area, and it is all
Example should not be construed as limited by such specific described example and condition.In addition, except as otherwise noted (for example, " or in addition " or
" or in alternative solution "), otherwise as used herein, the term "or" refer to nonexcludability or (that is, and/or).Also,
Various embodiments described herein are not necessarily mutually exclusive, because some embodiments can be with one or more of the other embodiment
Combination is so as to form new embodiment.As used herein, except as otherwise noted, otherwise term " context " and " context
Object " is understood to synonymous.
Temperature sensor is well known in integrated circuit fields.Temperature sensor provides output voltage, output electricity
The amplitude of pressure is equal to the temperature of circuits sense.The voltage sensed and reference voltage can be compared, to determine circuit unit
Whether overheat and determine that those components should be cut off or bypassed, to prevent from damaging, and to can compensate for related dress
The temperature dependency put.
One target of the embodiment of the present invention is the temperature sensor with high and adjustable current slope is obtained pole
The good degree of accuracy, is calibrated with providing simple temperature sensor.Specifically, embodiments of the invention result in wanted temperature
The +/- interior degree of accuracy twice of scope.Single insertion point can be used for pick up calibration in embodiment described herein.
In background technology, carry out input temperature values using some temperature insertion points and output temperature is wanted in calibration.Described herein
In embodiment, single insertion point permits the bigger degree of accuracy and linearizes the Output transfer function or slope of given circuit.This line
Property want the application of dynamic range voltage to can be predicted there is provided bigger using Sensor monitoring temperature and adjustment sensor
Property and design flexibility.
Embodiment described herein is design more simpler than background technology solution, background technology solution
Using operational amplifier and a large amount of diodes, this adds the complexity for setting the calibration algorithm for wanting temperature.The present invention
The design of embodiment may be used in the parameter drift that ADPLL is attributed to temperature change with accurate compensation TDC and DCO circuit and reduction
The New Generation Radar application of shifting.
Transistor is highly suitable as temperature sensor, especially requiring low cost, high accuracy, good steady in a long-term
When property and high sensitivity.For this purpose, to be attributed to base-emitter voltage related to temperature for the advantageous feature of transistor
Very predictable and independently of the mode of time.
When the temperature of transistor changes, the Base-emitter diode characteristic of transistor also changes, so as to cause identical defeated
The amount for entering the base current of voltage is different.This changes the controlled current flow through collector terminal again, so as to influence output voltage.
Fig. 1 shows showing according to PTAT the and IPTAT reference current generator circuits 100 of embodiment described herein
It is intended to；Circuit shown in Fig. 1 to form reference current I using electric current based on Δ VBE/R or VPTAT/R to produceREF(in Fig. 3
In show) PTAT current IPWith inverse (IPTAT) electric current IN.At the output of temperature sensor, compensated using trimmer resistor
IREFTo eliminate the influence of change of program and mismatch in circuit unit (for example, current mirror).
Referring to Fig. 1, using multiple MOSET devices 105,110 and 115, using from bipolar transistor 120,125,130
And 135 voltage output produces electric current I through resistor R1 150P.Using from bipolar transistor 120,135 and
140 voltage output produces electric current I through resistor R2160N。
IPAnd INTo sense the resultant current produced by initial temperature.The two electric currents are combined to create reference current IREF
(figure 3 illustrates), the reference current has high slope as to calibrate the starting point of temperature sensor.IREFIt can represent
For IREF=A*IP-B*IN, wherein A is the first multiplier, and B is the second multiplier.
In order to produce electric current IPAnd IN, use below equation.IPFor the PTAT current with PTAT and from equation
Formulas IPExported in=Δ Vbe (a)/R1, wherein Δ Vbe (a)=Vbe1+Vbe4-Vbe3-Vbe2.Inverse PTAT current INFrom equation
INExported in=Vbe (b)/R2, wherein Vbe (b)=Vbe1+Vbe4-Vbe5.Vbe1 is the Base-emitter knot of transistor 120
Voltage.Vbe2 is the voltage of the Base-emitter knot of transistor 125.Vbe3 is the voltage of the Base-emitter knot of transistor 130.
Vbe4 is the voltage of the Base-emitter knot of transistor 135.Vbe5 is the voltage of the Base-emitter knot of transistor 140.
Fig. 1 circuit is referred to alternatively as PTAT reference current generators 100, wherein PTAT current IPWith inverse PTAT current INQuilt
Combine to form the reference current I shown in Fig. 3REF。
Fig. 2 shows IP、INAnd IREFLinear characteristic and relation curve map.As shown in Figure 2, IPAnd INIt is combined
To produce the reference current (I with high slopeREF).By combining PTAT current IPThe positive temperature coefficient factor (TCF) with it is inverse
PTAT current INThe negative coefficient factor (TCF) produce high current slope.Pass through below equation TCF (IREF)={ TCF (IP)-
α*TCF(IN)/electric current I of (1- α) restriction through generationREFThe temperature coefficient factor (TCF), wherein α be ratio B/A (electric current IN's
Part divided by electric current IPPart).High current slope then be mirrored at each multiplier or divider current mirror reflection or
It is replicated, to cross over resistor ROUT385 (figure 3 illustrates) produce electric current IOUT, with generation and PTAT
(PTAT) want calibration voltage VOUT.In embodiment described herein, high slope can refer to the sensitivity on temperature,
Its medium and small temperature change produces big curent change, for example, 11000ppm/ DEG C of TCF.Therefore, big curent change reflection
Small temperature change.
Therefore, PTAT reference current generators 100 can produce the I on temperature approximately linearNElectric current and IPElectric current.PTAT
Reference current generator 100 can also permit determining I as shown in Figure 2 on temperature approximately linearREFThe slope of electric current.
Fig. 1 PTAT reference current generators 100 are embodied in Fig. 3 as PTAT current generator 310 and 320 pairs.This
A little current generators are configured to produce electric current IPAnd IN, electric current IPAnd INIt is directly proportional, and finally reaches to the operation temperature of circuit
The temperature of temperature sensor used in it.
Fig. 3 shows to calibrate the design of circuit 300 according to the temperature sensor of embodiment described herein.The design of circuit
This configuration is not limited to, because some designs can implement principle discussed herein.
Temperature sensor calibration circuit 300 includes three parts 330,340 and 350.Part 330 be related to electric current produce and
Slope is produced.Part 330 can be used for producing IPAnd INTo produce the reference current that temperature sensor calibrates circuit 300.Institute herein
The embodiment of description using electric current produce and its adjustable current slope of featured configuration, with calibration sensor and set it is defeated
Go out voltage.I can be usedPAnd INProduce initial reference electric current IREF, when electric current is calibrated, the initial reference electric current is based on electric current ratio
Rate, which has, wants slope.This current slope is used as reference, to determine the spirit of wanted output voltage range and temperature sensor
Sensitivity.
In embodiments of the present invention, IPAnd INIt is combined to create the reference current with high slope.Can be by using subtraction
Circuit 380 adjusts the gain of some circuit units (including current mirror transistor 365/366,367/368,369/370) to change
Absolute current is referred to.These components can be with 374/375 group of other current mirrors 371/372, wilson current mirror 373 and bipolar mirror
Conjunction is used, with output voltage needed for being produced under given temperature (for example, 27 DEG C), and the output voltage is monitored to be passed with calibrating temperature
Sensor.Can be by setting the ratio of the size (for example, width) of each MOS transistor as shown in Figure 3 to adjust or repair
Change gain.Using the structure based on current mirror with by high slope current IREFChange into through resistor ROUT385 output current
IOUT。
Current mirror is designed to replicate by controlling the electric current in another active device of circuit through an active dress
The electric current put, so as to keep constant output current to be loaded without considering.Current mirror has input and exported.Current mirror is used for multiple
Reference current processed.In this specific embodiment, using multiple current mirrors by produced electric current IREFCopy to output.
Each current mirror can reflex to the current mirror of same level another branch of circuit, may act as electric current division
Device, or may act as electric current multiplier.Compare needed for being set in each current mirror transistor 365/366,367/368,369/370
After rate, current mirror transistor 365/366,367/368,369/370 can with other mirrored transistors 371/372,373 and
374/375 is applied in combination to produce PTAT current I at outputOUT.Current mirror 369 passes through subtracter by digitial controller 350
380 controls, to keep current reference I when applying fine setting to adjust current slopeREFIt is constant.
Electric current can be manipulated in each branch that temperature sensor calibrates circuit 300, this depends on inserting in temperature
What is sensed during being calibrated at access point wants output voltage.If digitial controller 350 indicates IOUTIncrease, then pass through
The electric current of different branches can be manipulated by one or more current mirrors.For example, current mirror 374/375 can be used to make through branch
A current doubles are the output through branch B.Other ratios can be set.This aspect of current mirror can be used to be easy to set up
Gain.
Complete to adjust voltage Vout by finely tuning output resistor 385, to realize expected output voltage.By numeral control
Device 350 processed performs control in a digital manner.Therefore, controller 350 can select pin 398 to compile via one or more calibrations
The mode of journey select with control electric current mirror transistor 366,368, or one or more of 369 current mirror transistors, to obtain
Electric current I is wanted with wanted current slopeOUT.In the embodiments described, electricity is implemented using NMOS and NPN transistor
Flow mirror.However, those skilled in the art will recognize that the use of PMOS and PNP transistor being possible, this produces generally phase
Same result.
Embodiment described herein includes the temperature sensor produced based on accurate current slope.In such as this area
Know, can be by making electric current be transferred through resistor come the voltage at any in measuring circuit.Similarly, for control voltage level
VOUT, can adjust or finely tune through variable resistance ROUT385 electric current IOUT, to realize wanted voltage.By using herein
Described design, using fine-tuning capability, can avoid parameter and circuit from degrading.
Can be to output resistor ROUT385 perform fine setting, to compensate any mismatch along current mirror.Use controller
350 control fine setting, slope and therefore calibrate.
Part 340 shows that temperature sensor calibrates the embodiment of circuit 300.In order that sensing height with temperature sensor 100
Voltage, can be used independent voltage source VDD, independent voltage source VDDHigher than the V of circuit part 110CC, so as to permit in VOUTPlace is more
High voltage.In this configuration, IREFCurrent mirror 373 is sent to, and different electrical power line V can be used in circuit part 340DDTo produce
The raw anticipated output voltage with PTAT.Output resistor 385 is fine-tuning, is accumulated with compensating along different current mirrors
Mismatch.Current mirror 373 can be used to be configured to dispose higher voltage level such as wilson current mirror.
In part 340, the circuit flexibility of the environment for high temperature can be sensed is obtained.Instead of VCCWith VDDIt is equal, VDDCan
Higher than VCC, to cause it is contemplated that higher wants temperature.In Additional examples of composition (not shown), both circuit parts 330 and 340
All by identical voltage VCCPower supply.In VCCThe V being equal toDDIn the case of, output voltage VOUTWill be relatively low.Using separated circuit
And VDDMore than VCCIn the case of, the supersaturation between circuit can be avoided.
During calibrating, temperature sensor calibration circuit 300 may be configured as a temperature, and the temperature has given circuit or electricity
The limiting temperature value of road component.By setting the temperature value limited, the absolute voltage of temperature sensor output can be obtained, this is absolute
Voltage is adjusted to achieve expected output voltage VOUT。
In order to realize these targets, carry out precise control using digitial controller 350 and high slope produces electric current.Electric current IREF
Reflection is mirrored to be used as IOUTIt is transferred through ROUT, to produce V based on wanted output voltageOUT, and therefore VOUTAlso it is PTAT.
Between circuit part 330 and 340, bipolar transistor is to being used in current mirror configuration.For security consideration,
Shutdown mode for having a power failure to circuit uses bipolar transistor to 375 in configuring.Circuit is (disconnected to connect (energization) or shut-off
Electricity).(for example) in wireless application, can in deactivation of circuits untapped function to save battery.This configuration must be carried out
Manage so that device is in area of safe operation.In part 340, supply voltage can rise to 5V., will be bipolar in shutdown mode
The colelctor electrode of transistor 375 is connected to 5V voltages.High voltage bipolar transistor current mirror 375 can maintain this high voltage to support
Higher voltage at the output of temperature sensor calibration circuit 300, this is not the situation in mos device configuration.
Digitial controller 350 can be used for producing controllable current slope.The programmability of digitial controller 350 can be implemented
To adjust the V corresponding to corresponding temperature rangeOUTOut-put dynamic range.
Controller 350 provides flexibility by controlling temperature control.Exist in circuit and controlled by digitial controller 350
Single insertion point, to calibrate temperature sensor by adjusting variable resistance 385.
Digitial controller 350 is using logic unit with weighted current mirror, and this produces the flexibility that current slope is produced.Electric current
Mirror can be programmed to weight IPAnd INHigh slope is wanted to produce.In order to keep constant output current, controller component (example is used
Such as, subtracter 380) multiplier A and B are controlled, to set reference current IREF.Position p<n：0>382 and m<n：0>384 be control
Binary system from digitial controller 350, these are decoded by the binary system of Thermometer-decoder, to allow for wearing
The control of the current slope of overcurrent mirror 365/366,367/368 and 369/370.Decoded p<n：0>Control electric current source mirror
As to 365/366, to determine that through transistor 366 electric current I through transistor 365 will be producedPHow many times.Similarly, pass through
The m of decoding<n：0>Control electric current source mirror image is to 367/368, to determine to produce through transistor 367 through transistor 368
Electric current INHow many times.Decoded difference p<n：0>、m<n：0>Last is driven to absorb current mirror transistor 369, to protect
Hold constant output current.
Collimation technique described herein can minimize the manufacturing cost of temperature sensing device, because changing
Die temperature for the device of calibration generally takes the testing time of more long duration, and this causes higher installation cost.
The method that calibration temperature sensor will now be described.Temperature sensing is produced based on electric current.IPAnd INBe combined so that
High slope current I is produced with slope generationREF。
Fig. 4 shows to exemplify the flow chart of the method 400 of calibration temperature sensor according to implementation described herein.Side
Method 400 can be used for calibration temperature sensor, the temperature sensor calibration of such as part 100 and 330 to 350 with Fig. 1 and Fig. 3
Circuit 300.Therefore, the component used in method 400 may include the temperature biography with Fig. 1 and Fig. 3 part 100 and 330 to 350
The component class Sihe identical component of sensor.
In Fig. 4, method 400 can begin at step 410, and step 410 may include to produce PTAT current and inverse PTAT current.
Step 420 may include PTAT and IPTAT being combined into the reference current I with high current slopeREF.Step 430 may include to use
Multiple current mirror adjustment reference current IREFSlope.Step 440, which may include to produce, exports calibration voltage, including high slope is electric
Output resistor is streamed to, the wherein output resistor is fine-tuning to adjust output calibration voltage, with inserting corresponding to restriction
Enter temperature value.Temperature correction based on restriction may also include based on the voltage at output resistor 385 to the activity of wanted voltage
Many temperature readings and fine setting temperature sensor are obtained, so that temperature sensor offer value is equal or close to the school during calibration
The temperature reading of quasi- temperature value.Method 400 may include movable similar with Fig. 1 and Fig. 3 temperature sensor 100 and 330 to 350
Or the other activities of identical.
Fig. 5 shows flow chart the step of being performed by digitial controller 350 according to embodiment described herein.Step
Rapid 510 may include to set init state, to enable temperature sensor.Temperature in use it can be sensed (for example) in digitial controller
Device (" TS ") enables signal, to realize this change.Step 520 may include the initial temperature at insertion point being set to room temperature
Value, about 25 DEG C.Step 530 may include that the system temperature based on restriction sets monitoring and adjustment VOUT.Step 540 may include
The fine-tuning resistor 385 of adjustment, to reach wanted output voltage.At step 550, temperature sensor calibration is completed.
By measuring the temperature of silicon substrate, temperature sensor calibration circuit 300 can provide accurate temperature survey, and can produce
The raw linear voltage being directly proportional to the die temperature sensed.By using the electric current Ip with PTAT and with temperature
Spend after the electric current In restriction slopes being inversely proportional, use the output current I produced by Fig. 1 PTAT circuit 100REF.Sensing device further
300 output VOUTIt is designed to vary with temperature and change in a linear fashion.
Transistor is to being each configured as current mirror 365/366,367/368,369/370,371/372, Wilson's electric current
Mirror 373, and 374/375, these current mirrors take the PTAT circuit electric current I of certain percentageREF, and pass through resistor ROUTWill
PTAT circuit electric current is applied to output circuit.Due to the mismatch of current mirror, calibration is performed at sensor output.
In order to apply sensed circuit, position can encapsulated or the final school of PTAT outputs is performed at wafer scale
It is accurate.By using design described herein, using fine-tuning capability, parameter and circuit can be avoided to degrade.
It should be noted that above-described embodiment shows to be not intended to limit the present invention, and those skilled in the art is possible to do not departing from
Many alternate embodiments are designed in the case of the scope of the appended claims.In detail in the claims, be placed on round parentheses it
Between any reference be not necessarily to be construed as limiting the claim.Word " comprising " is not excluded for except institute in claims
The presence of element or step outside those element or steps of row.Word " one " before element is not excluded for multiple such members
The presence of part.The present invention can be implemented by means of the hardware including some distinct elements.Listing the device right of some components
In claim, some components in these components can be embodied by the same object in hardware.In subordinate different from each other
Some measures this simple facts is described in claim to be not offered as that the combination of these measures can not be used to obtain advantage.
Claims (10)
1. a kind of temperature sensor, it is characterised in that including：
First current generator, first current generator is configured to produce and PTAT (PTAT) electric current；
Second current generator, second current generator is configured to produce inverse PTAT (IPTAT) electric current, the PTAT electricity
Stream and IPTAT electric currents are combined to form the reference current with the sensitivity on temperature；
Multiple current mirrors, the sensitivity and gain of the current mirror to adjust the reference current；And
Variable resistance, the variable resistance based on produced electric current to set output calibration voltage.
2. temperature sensor according to claim 1, it is characterised in that including digitial controller, the digitial controller
It is configured to control the adjustment of the reference current sensitivity.
3. temperature sensor according to claim 1, it is characterised in that including：First voltage source, the first voltage source
In the first circuit part with the first value, the first voltage source is to produce the PTAT current and IPTAT electric currents；With
And the second voltage source, the second voltage source with higher than described first value second value second circuit part in, it is described
The second voltage source is configured to enable high output voltage to be calibrated.
4. temperature sensor according to claim 1, it is characterised in that including multiple bipolar transistor transistors, to produce
Raw PTAT and IPTAT.
5. a kind of method for calibrating temperature sensor, it is characterised in that including：
Produce and PTAT (PTAT) electric current；
Inverse PTAT (IPTAT) electric current is produced, PTAT current and the IPTAT electric current is combined to form with the spirit on temperature
The reference current of sensitivity；
Adjust the sensitivity and gain of the reference current；And
Output calibration voltage is set based on adjusted current slope.
6. method according to claim 5, it is characterised in that adjust the sensitivity including the use of digitial controller.
7. a kind of method for calibrating temperature sensor, it is characterised in that including：
Produce the reference current with the sensitivity on temperature；
The sensitivity of the reference current is adjusted using multiple current mirrors；
Adjusted reference current is set to flow through output resistor, to produce the reference output voltage of the temperature sensor；And
The reference output voltage is adjusted using variable resistance.
8. method according to claim 7, it is characterised in that adjust the reference current including the use of digitial controller
The sensitivity.
9. method according to claim 7, it is characterised in that finely tune the variable resistor including the use of digitial controller
Device.
10. method according to claim 7, it is characterised in that including the use of subtracter, the subtracter is configured to control
At least one MOS transistor is made, to keep the reference current constant.
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| EP16290072.4 | 2016-04-22 | ||
| EP16290072.4A EP3236224B1 (en) | 2016-04-22 | 2016-04-22 | Temperature sensor and calibration method thereof having high accuracy |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN107305147A true CN107305147A (en) | 2017-10-31 |
| CN107305147B CN107305147B (en) | 2021-06-04 |
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Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201710269135.1A Active CN107305147B (en) | 2016-04-22 | 2017-04-21 | Temperature sensor and temperature sensor calibration method with high accuracy |
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| Country | Link |
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| US (1) | US10648870B2 (en) |
| EP (1) | EP3236224B1 (en) |
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Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN113204044A (en) * | 2021-03-16 | 2021-08-03 | 华中科技大学 | Nuclear pulse energy measuring method for nuclear logging instrument |
| CN114637232A (en) * | 2020-12-16 | 2022-06-17 | 致新科技股份有限公司 | Physical parameter generator |
Families Citing this family (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US10191507B1 (en) * | 2017-11-22 | 2019-01-29 | Samsung Electronics Co., Ltd. | Temperature sensor using proportional to absolute temperature sensing and complementary to absolute temperature sensing and electronic device including the same |
| CN110044508B (en) * | 2018-01-15 | 2021-02-26 | 佛山市顺德区美的电热电器制造有限公司 | Electromagnetic heating system and temperature measuring method and device thereof |
| US11125629B2 (en) * | 2018-12-04 | 2021-09-21 | Nxp Usa, Inc. | Temperature detection circuitry |
| EP3667274A1 (en) * | 2018-12-14 | 2020-06-17 | Nxp B.V. | Device and method for generating a proportional to absolute temperature (ptat) output current with adjustable slope |
| US11519795B2 (en) * | 2019-09-24 | 2022-12-06 | Nxp Usa, Inc. | Systems and methods for calibrating temperature sensors |
| CN114995569B (en) * | 2022-06-07 | 2024-02-27 | 思瑞浦微电子科技（苏州）股份有限公司 | Reference voltage calibration circuit and calibration method |
| US12072722B2 (en) * | 2022-06-24 | 2024-08-27 | Analog Devices, Inc. | Bias current with hybrid temperature profile |
Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102788949A (en) * | 2011-05-17 | 2012-11-21 | 创杰科技股份有限公司 | Circuit used for indicating process corner and extreme temperature |
| CN103135656A (en) * | 2011-12-02 | 2013-06-05 | 赛普拉斯半导体公司 | Circuit used for current with programmable temperature gradient |
| US20140218071A1 (en) * | 2011-07-03 | 2014-08-07 | Scott Hanson | Low Power Tunable Reference Current Generator |
| CN104215353A (en) * | 2013-05-29 | 2014-12-17 | 英特尔Ip公司 | Input stage for temperature measurement system |
Family Cites Families (41)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2682470B2 (en) * | 1994-10-24 | 1997-11-26 | 日本電気株式会社 | Reference current circuit |
| US5519354A (en) | 1995-06-05 | 1996-05-21 | Analog Devices, Inc. | Integrated circuit temperature sensor with a programmable offset |
| US5982221A (en) | 1997-08-13 | 1999-11-09 | Analog Devices, Inc. | Switched current temperature sensor circuit with compounded ΔVBE |
| US6078208A (en) | 1998-05-28 | 2000-06-20 | Microchip Technology Incorporated | Precision temperature sensor integrated circuit |
| US6137341A (en) | 1998-09-03 | 2000-10-24 | National Semiconductor Corporation | Temperature sensor to run from power supply, 0.9 to 12 volts |
| US6181191B1 (en) * | 1999-09-01 | 2001-01-30 | International Business Machines Corporation | Dual current source circuit with temperature coefficients of equal and opposite magnitude |
| US6335661B1 (en) * | 2000-05-11 | 2002-01-01 | Maxim Integrated Products, Inc. | Balanced input for temperature sensor |
| US7439601B2 (en) | 2004-09-14 | 2008-10-21 | Agere Systems Inc. | Linear integrated circuit temperature sensor apparatus with adjustable gain and offset |
| US7127368B2 (en) * | 2004-11-19 | 2006-10-24 | Stmicroelectronics Asia Pacific Pte. Ltd. | On-chip temperature sensor for low voltage operation |
| KR100707306B1 (en) * | 2005-03-03 | 2007-04-12 | 삼성전자주식회사 | Voltage reference generator with various temperature coefficients which are in inverse proportion to temperature and display device equipped therewith |
| US7809519B2 (en) * | 2005-07-18 | 2010-10-05 | Micron Technology, Inc. | System and method for automatically calibrating a temperature sensor |
| US7405552B2 (en) | 2006-01-04 | 2008-07-29 | Micron Technology, Inc. | Semiconductor temperature sensor with high sensitivity |
| JP2007192718A (en) * | 2006-01-20 | 2007-08-02 | Oki Electric Ind Co Ltd | Temperature sensor |
| KR100807594B1 (en) * | 2006-09-28 | 2008-02-28 | 주식회사 하이닉스반도체 | On die thermal sensor and semiconductor device having the same |
| US7686508B2 (en) * | 2006-10-21 | 2010-03-30 | Intersil Americas Inc. | CMOS temperature-to-digital converter with digital correction |
| US7486129B2 (en) * | 2007-03-01 | 2009-02-03 | Freescale Semiconductor, Inc. | Low power voltage reference |
| US20080297229A1 (en) * | 2007-05-31 | 2008-12-04 | Navin Kumar Ramamoorthy | Low power cmos voltage reference circuits |
| US8415940B2 (en) | 2008-06-18 | 2013-04-09 | Freescale Semiconductor, Inc. | Temperature compensation circuit and method for generating a voltage reference with a well-defined temperature behavior |
| US7728575B1 (en) * | 2008-12-18 | 2010-06-01 | Texas Instruments Incorporated | Methods and apparatus for higher-order correction of a bandgap voltage reference |
| US9004754B2 (en) * | 2009-04-22 | 2015-04-14 | Taiwan Semiconductor Manufacturing Company, Ltd. | Thermal sensors and methods of operating thereof |
| US8134414B2 (en) * | 2009-04-24 | 2012-03-13 | Integrated Device Technology, Inc. | Clock, frequency reference, and other reference signal generator with frequency stability over temperature variation |
| CN101943613B (en) * | 2009-07-03 | 2014-07-23 | 飞思卡尔半导体公司 | Sub-threshold CMOS temperature detector |
| TWI384210B (en) * | 2009-08-14 | 2013-02-01 | Sunplus Technology Co Ltd | Thermal detecting apparatus and method |
| DE102009040543B4 (en) * | 2009-09-08 | 2014-02-13 | Texas Instruments Deutschland Gmbh | Circuit and method for trimming offset drift |
| US8354875B2 (en) * | 2010-03-25 | 2013-01-15 | Qualcomm Incorporated | Low voltage temperature sensor and use thereof for autonomous multiprobe measurement device |
| US8378735B2 (en) | 2010-11-29 | 2013-02-19 | Freescale Semiconductor, Inc. | Die temperature sensor circuit |
| US9535446B2 (en) * | 2011-07-13 | 2017-01-03 | Analog Devices, Inc. | System and method for power trimming a bandgap circuit |
| JP5879136B2 (en) * | 2012-01-23 | 2016-03-08 | ルネサスエレクトロニクス株式会社 | Reference voltage generation circuit |
| KR101358076B1 (en) * | 2012-04-13 | 2014-02-05 | 한국과학기술원 | Temperature sensor, and temperature measurement method thereof |
| US8988154B2 (en) * | 2012-10-11 | 2015-03-24 | Mediatek Singapore Pte. Ltd. | Voltage-to-current converter and voltage controlled oscillator having voltage-to-current converter |
| US9240775B2 (en) * | 2013-03-12 | 2016-01-19 | Intel Deutschland Gmbh | Circuit arrangements |
| US9557226B2 (en) * | 2013-07-22 | 2017-01-31 | Intel Corporation | Current-mode digital temperature sensor apparatus |
| US10190922B2 (en) * | 2013-12-06 | 2019-01-29 | Intel Corporation | Method and apparatus for calibrating a sensor |
| US9958339B2 (en) * | 2014-02-07 | 2018-05-01 | Boston Scientific Neuromodulation Corporation | Temperature sensing circuitry for an implantable medical device |
| US9909934B2 (en) * | 2014-02-28 | 2018-03-06 | Nxp Usa, Inc. | Systems and methods for calibrating a temperature detection module |
| US9719861B2 (en) * | 2014-08-13 | 2017-08-01 | Nxp Usa, Inc. | Temperature sensor circuit |
| US9846446B2 (en) * | 2015-01-21 | 2017-12-19 | Samsung Electronics Co., Ltd | Apparatus for compensating for temperature and method therefor |
| US10109551B2 (en) * | 2015-09-15 | 2018-10-23 | Intel Corporation | Methods and apparatuses for determining a parameter of a die |
| EP3340467B1 (en) * | 2016-12-22 | 2022-10-05 | NXP USA, Inc. | Digitally controlled oscillator with temperature compensation |
| US10378969B2 (en) * | 2017-05-10 | 2019-08-13 | Infineon Technologies Ag | Temperature sensor |
| US10644581B2 (en) * | 2017-11-01 | 2020-05-05 | Texas Instruments Incorporated | DC-DC power conversion circuitry with efficiency optimization using temperature sensing |
-
2016
- 2016-04-22 EP EP16290072.4A patent/EP3236224B1/en active Active
-
2017
- 2017-03-20 US US15/464,145 patent/US10648870B2/en active Active
- 2017-04-21 CN CN201710269135.1A patent/CN107305147B/en active Active
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102788949A (en) * | 2011-05-17 | 2012-11-21 | 创杰科技股份有限公司 | Circuit used for indicating process corner and extreme temperature |
| US20140218071A1 (en) * | 2011-07-03 | 2014-08-07 | Scott Hanson | Low Power Tunable Reference Current Generator |
| CN103135656A (en) * | 2011-12-02 | 2013-06-05 | 赛普拉斯半导体公司 | Circuit used for current with programmable temperature gradient |
| CN104215353A (en) * | 2013-05-29 | 2014-12-17 | 英特尔Ip公司 | Input stage for temperature measurement system |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN114637232A (en) * | 2020-12-16 | 2022-06-17 | 致新科技股份有限公司 | Physical parameter generator |
| CN113204044A (en) * | 2021-03-16 | 2021-08-03 | 华中科技大学 | Nuclear pulse energy measuring method for nuclear logging instrument |
| CN113204044B (en) * | 2021-03-16 | 2024-08-09 | 华中科技大学 | Nuclear pulse energy measuring method for nuclear logging instrument |
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| US10648870B2 (en) | 2020-05-12 |
| EP3236224A1 (en) | 2017-10-25 |
| US20170307451A1 (en) | 2017-10-26 |
| EP3236224B1 (en) | 2018-12-19 |
| CN107305147B (en) | 2021-06-04 |
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