CN107293614A - The method that cell piece generates thermal oxide passivation layer - Google Patents
The method that cell piece generates thermal oxide passivation layer Download PDFInfo
- Publication number
- CN107293614A CN107293614A CN201710327075.4A CN201710327075A CN107293614A CN 107293614 A CN107293614 A CN 107293614A CN 201710327075 A CN201710327075 A CN 201710327075A CN 107293614 A CN107293614 A CN 107293614A
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- China
- Prior art keywords
- silicon chip
- cell piece
- thermal oxide
- passivation layer
- oxidation
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- 238000000034 method Methods 0.000 title claims abstract description 26
- 238000002161 passivation Methods 0.000 title claims abstract description 16
- 229910052710 silicon Inorganic materials 0.000 claims abstract description 31
- 239000010703 silicon Substances 0.000 claims abstract description 31
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims abstract description 30
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims abstract description 20
- 238000007254 oxidation reaction Methods 0.000 claims abstract description 20
- 230000003647 oxidation Effects 0.000 claims abstract description 15
- 235000012239 silicon dioxide Nutrition 0.000 claims abstract description 13
- 239000003054 catalyst Substances 0.000 claims abstract description 7
- 229910052681 coesite Inorganic materials 0.000 claims abstract description 7
- 229910052906 cristobalite Inorganic materials 0.000 claims abstract description 7
- 239000000377 silicon dioxide Substances 0.000 claims abstract description 7
- 229910052682 stishovite Inorganic materials 0.000 claims abstract description 7
- 229910052905 tridymite Inorganic materials 0.000 claims abstract description 7
- 239000007800 oxidant agent Substances 0.000 claims abstract description 4
- 230000001590 oxidative effect Effects 0.000 claims abstract description 4
- 239000013078 crystal Substances 0.000 claims description 21
- 238000005530 etching Methods 0.000 claims description 8
- 238000006243 chemical reaction Methods 0.000 claims description 7
- 239000003708 ampul Substances 0.000 claims description 6
- 239000010453 quartz Substances 0.000 claims description 6
- 238000009792 diffusion process Methods 0.000 claims description 4
- 235000008216 herbs Nutrition 0.000 claims description 4
- 238000007650 screen-printing Methods 0.000 claims description 4
- 238000005245 sintering Methods 0.000 claims description 4
- 210000002268 wool Anatomy 0.000 claims description 4
- 230000003628 erosive effect Effects 0.000 claims 2
- 230000000694 effects Effects 0.000 abstract description 5
- 238000005215 recombination Methods 0.000 abstract description 4
- 230000006798 recombination Effects 0.000 abstract description 4
- 238000004140 cleaning Methods 0.000 abstract description 3
- 239000012535 impurity Substances 0.000 abstract description 3
- 229910001415 sodium ion Inorganic materials 0.000 description 4
- 238000005516 engineering process Methods 0.000 description 3
- 229910021419 crystalline silicon Inorganic materials 0.000 description 2
- RCJVRSBWZCNNQT-UHFFFAOYSA-N dichloridooxygen Chemical compound ClOCl RCJVRSBWZCNNQT-UHFFFAOYSA-N 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- 239000000126 substance Substances 0.000 description 2
- ZAMOUSCENKQFHK-UHFFFAOYSA-N Chlorine atom Chemical compound [Cl] ZAMOUSCENKQFHK-UHFFFAOYSA-N 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 229910052801 chlorine Inorganic materials 0.000 description 1
- 239000000460 chlorine Substances 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 238000002156 mixing Methods 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000013082 photovoltaic technology Methods 0.000 description 1
- 238000000623 plasma-assisted chemical vapour deposition Methods 0.000 description 1
- 239000000047 product Substances 0.000 description 1
- 239000002210 silicon-based material Substances 0.000 description 1
- 239000000758 substrate Substances 0.000 description 1
- 239000013589 supplement Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
- H01L31/1804—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof comprising only elements of Group IV of the Periodic Table
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0216—Coatings
- H01L31/02161—Coatings for devices characterised by at least one potential jump barrier or surface barrier
- H01L31/02167—Coatings for devices characterised by at least one potential jump barrier or surface barrier for solar cells
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/547—Monocrystalline silicon PV cells
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
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- Engineering & Computer Science (AREA)
- Computer Hardware Design (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Electromagnetism (AREA)
- General Physics & Mathematics (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Life Sciences & Earth Sciences (AREA)
- Sustainable Development (AREA)
- Sustainable Energy (AREA)
- Formation Of Insulating Films (AREA)
- Photovoltaic Devices (AREA)
Abstract
The invention discloses a kind of method that cell piece generates thermal oxide passivation layer, it is characterized in that the silicon chip for having formed P N knots is put into high temperature furnace, silicon chip surface carries out carrying out conventional subsequent handling again after oxidation reaction generates one layer of SiO2 film under high temperature and catalyst action with oxidant.The present invention increases by one of oxidation operation in conventional batteries technique, to form the preferable SiO2 oxide layers of one layer of compactness, the effect being necessarily passivated can be played, reduce surface-active, increase the cleaning procedure on surface, avoid, because superficial layer introduces impurity and forms complex centre, the surface recombination velocity (S.R.V.) of minority carrier being reduced with this.And then raising cell piece opens pressure, improves cell piece efficiency.
Description
Technical field
The invention belongs to field of photovoltaic technology, the method that specifically a kind of cell piece generates thermal oxide passivation layer.
Background technology
The efficient conversion efficiency of crystal-silicon solar cell is that to be obtained on high-quality substrate silicon material foundation is crystal
Solar cell into main cause.To reduce the cost, reduction cell piece thickness turns into the weight that body silicon solar cell develops
Want trend.The problem of being produced with this trend be exactly battery surface be combined it is intensification.This is just surface of crystalline silicon passivating technique
Improve challenge.Research in order to ensure crystal silicon solar surface passivation technique is essential, crystal silicon solar from now on
Surface passivation technique will be one of popular problem of internal and international research.
It can be said that current high efficiency crystalline silicon solar cell is all to reduce semiconductor using good surface passivation technique
Surface-active, making the recombination rate on surface reduces.Its major way is exactly the dangling bonds at saturation semiconductor surface.Reduce surface
Activity, increases the cleaning procedure on surface, it is to avoid because superficial layer introduces impurity and forms complex centre, a small number of loads are reduced with this
Flow the surface recombination velocity (S.R.V.) of son.
The content of the invention
The purpose of the present invention is, for problem present in background technology, to propose a kind of cell piece generation thermal oxide passivation layer
Method.Technical scheme is that the silicon chip for having formed P-N junction is put into high temperature furnace, and silicon chip surface is in high temperature and catalyst action
Lower and oxidant carries out oxidation reaction and generates one layer of SiO2 film.
It is preferred that, the oxidation reaction is to use stopped pipe thermal oxidation process, and the catalyst is HCL.
Specifically, the entire flow that cell piece makes is：
S1：P-type crystal silicon chip is chosen, by crystal silicon chip by conventional making herbs into wool, diffusion, etching procedure；
S2：P-type crystal silicon chip is put into oxidation boiler tube, using stopped pipe thermal oxide mode, the front of crystal silicon chip is realized
Oxidation；
S3：Again by conventional screen printing and Fast Sintering process, solar battery sheet is prepared.
It is preferred that, in step S2：P-type crystal silicon chip after etching is put into the quartz ampoule of oxidation operation, reaction condition：
O2：1-5L/M, N2：10-15L/M, HCL:120-150cc/M, time t：10-20min, temperature T：700-780 DEG C, the present embodiment
The oxidated layer thickness of generation：20-30nm.
It is preferred that, in step S2：P-type crystal silicon chip after etching is put into the quartz ampoule of oxidation operation, reaction condition：
O2：5-8L/M, N2：10-15L/M, HCL:90-120cc/M, time t：20-30min, temperature T：600-750 DEG C, the present embodiment
The oxidated layer thickness of generation：25-35nm.
Beneficial effects of the present invention
The present invention increases by one of oxidation operation in conventional batteries technique, to form the preferable SiO2 oxide layers of one layer of compactness,
The effect being necessarily passivated can be played, surface-active is reduced, increases the cleaning procedure on surface, it is to avoid because superficial layer introduces impurity
And complex centre is formed, the surface recombination velocity (S.R.V.) of minority carrier is reduced with this.And then raising cell piece opens pressure, improves battery
Piece efficiency.And the present invention is applied in combination using catalyst and oxidant, can effectively reduce Na ions in oxide layer, to ensure preferably
Passivation effect.
In this programme, using chlorine as oxide, oxychloride effectively reduces Na ions in oxide layer, reduces silicon chip surface
It is compound.
Embodiment
With reference to embodiment, the invention will be further described, but protection scope of the present invention not limited to this：
Embodiment 1：
S1：P-type crystal silicon chip (specification is 156.75) is chosen, by crystal silicon chip by conventional making herbs into wool, diffusion, etching work
Sequence；
S2：P-type crystal silicon chip after etching is put into the quartz ampoule of oxidation operation, reaction condition：O2：1-5L/M, N2：
10-15L/M, HCL:120-150cc/M, time t：10-20min, temperature T：700-780℃；
S3：Again by conventional screen printing and Fast Sintering process, solar battery sheet is prepared.
Solar energy highly effective battery prepared by embodiment 1, its oxide layer (SiO2 films) thickness is 20-30nm.
Embodiment 2：
S1：P-type crystal silicon chip (specification is 156.75) is chosen, by crystal silicon chip by conventional making herbs into wool, diffusion, etching work
Sequence；
S2：P-type crystal silicon chip after etching is put into the quartz ampoule of oxidation operation, reaction condition：O2：5-8L/M, N2：
10-15L/M, HCL:120-150cc/M times t：20-30min, temperature T：600-750℃；
S3：Again by conventional screen printing and Fast Sintering process, solar battery sheet is prepared.
Solar energy highly effective battery prepared by embodiment 2, its oxide layer (SiO2 films) thickness is 25-35nm.
Crystalline substance is realized compared to product (PECVD) is mutually precipitated using thermal oxidation method or plasma enhanced chemical in the prior art
For the passivation of body surface of silicon solar cell, mixing oxychloride effectively reduces Na ions in oxide layer, and reduction silicon chip surface is combined.
And utilize catalyst, can in it can effectively reduce oxide layer Na ions, to ensure preferable passivation effect.
Specific embodiment described herein is only that spirit of the present invention is illustrated.Technology neck belonging to of the invention
The technical staff in domain can be made various modifications or supplement to described specific embodiment or be replaced using similar mode
Generation, but without departing from the spiritual of the present invention or surmount scope defined in appended claims.
Claims (5)
1. a kind of method that cell piece generates thermal oxide passivation layer, it is characterised in that this method will form the silicon chip of P-N junction
It is put into high temperature furnace, silicon chip surface carries out oxidation reaction with oxidant under high temperature and catalyst action and generated after one layer of SiO2 film
Conventional subsequent handling is carried out again.
2. the method that cell piece according to claim 1 generates thermal oxide passivation layer, it is characterised in that the oxidation reaction
It is to use stopped pipe thermal oxidation process, the catalyst is HCL.
3. the method that cell piece according to claim 2 generates thermal oxide passivation layer, it is characterised in that what cell piece made
Entire flow is：
S1：P-type crystal silicon chip is chosen, by crystal silicon chip by conventional making herbs into wool, diffusion, etching procedure；
S2：P-type crystal silicon chip is put into oxidation boiler tube, using stopped pipe thermal oxide mode, the front oxidation of crystal silicon chip is realized；
S3：Again by conventional screen printing and Fast Sintering process, solar battery sheet is prepared.
4. the method that cell piece according to claim 3 generates thermal oxide passivation layer, it is characterised in that in step S2：It will carve
P-type crystal silicon chip after erosion is put into the quartz ampoule of oxidation operation, reaction condition：O2：1-5L/M, N2：10-15L/M, HCL:
120-150cc/M, time t：10-20min, temperature T：700-780℃.
5. the method that cell piece according to claim 3 generates thermal oxide passivation layer, it is characterised in that in step S2：It will carve
P-type crystal silicon chip after erosion is put into the quartz ampoule of oxidation operation, reaction condition：O2：5-8L/M, N2：10-15L/M, HCL:
90-120cc/M, time t：20-30min, temperature T：600-750℃.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201710327075.4A CN107293614A (en) | 2017-05-10 | 2017-05-10 | The method that cell piece generates thermal oxide passivation layer |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201710327075.4A CN107293614A (en) | 2017-05-10 | 2017-05-10 | The method that cell piece generates thermal oxide passivation layer |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN107293614A true CN107293614A (en) | 2017-10-24 |
Family
ID=60095085
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201710327075.4A Pending CN107293614A (en) | 2017-05-10 | 2017-05-10 | The method that cell piece generates thermal oxide passivation layer |
Country Status (1)
| Country | Link |
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| CN (1) | CN107293614A (en) |
Citations (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20030134469A1 (en) * | 1996-12-24 | 2003-07-17 | Imec Vzw, A Research Center In The Country Of Belgium | Semiconductor device with selectively diffused regions |
| CN101079452A (en) * | 2007-06-11 | 2007-11-28 | 江苏林洋新能源有限公司 | N-type underlay single-side extraction electrode crystal silicon cell and its making method |
| CN101587920A (en) * | 2009-04-02 | 2009-11-25 | 常州天合光能有限公司 | Process for surface diffusion treatment of silicon chip of solar cell |
| US20110136285A1 (en) * | 2009-12-03 | 2011-06-09 | Samsung Electronics Co., Ltd. | Method for manufacturing stacked film and solar cell |
| CN102315310A (en) * | 2010-06-30 | 2012-01-11 | 比亚迪股份有限公司 | Diffusion process in solar panel preparation |
| CN102629643A (en) * | 2012-04-16 | 2012-08-08 | 中利腾晖光伏科技有限公司 | Manufacturing method of high-square-resistance solar cell |
| CN102834930A (en) * | 2010-03-30 | 2012-12-19 | 应用材料公司 | Method of forming a negatively charged passivation layer over a diffused p-type region |
| CN103618028A (en) * | 2013-11-15 | 2014-03-05 | 中电电气（南京）光伏有限公司 | Method for preparing surface-passivated PN joint and crystalline silicon solar cell |
-
2017
- 2017-05-10 CN CN201710327075.4A patent/CN107293614A/en active Pending
Patent Citations (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20030134469A1 (en) * | 1996-12-24 | 2003-07-17 | Imec Vzw, A Research Center In The Country Of Belgium | Semiconductor device with selectively diffused regions |
| CN101079452A (en) * | 2007-06-11 | 2007-11-28 | 江苏林洋新能源有限公司 | N-type underlay single-side extraction electrode crystal silicon cell and its making method |
| CN101587920A (en) * | 2009-04-02 | 2009-11-25 | 常州天合光能有限公司 | Process for surface diffusion treatment of silicon chip of solar cell |
| US20110136285A1 (en) * | 2009-12-03 | 2011-06-09 | Samsung Electronics Co., Ltd. | Method for manufacturing stacked film and solar cell |
| CN102834930A (en) * | 2010-03-30 | 2012-12-19 | 应用材料公司 | Method of forming a negatively charged passivation layer over a diffused p-type region |
| CN102315310A (en) * | 2010-06-30 | 2012-01-11 | 比亚迪股份有限公司 | Diffusion process in solar panel preparation |
| CN102629643A (en) * | 2012-04-16 | 2012-08-08 | 中利腾晖光伏科技有限公司 | Manufacturing method of high-square-resistance solar cell |
| CN103618028A (en) * | 2013-11-15 | 2014-03-05 | 中电电气（南京）光伏有限公司 | Method for preparing surface-passivated PN joint and crystalline silicon solar cell |
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Application publication date: 20171024 |
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