CN107257002A - The wide wall micropore couplers of the dB of substrate integration wave-guide 3 - Google Patents
The wide wall micropore couplers of the dB of substrate integration wave-guide 3 Download PDFInfo
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- CN107257002A CN107257002A CN201710355366.4A CN201710355366A CN107257002A CN 107257002 A CN107257002 A CN 107257002A CN 201710355366 A CN201710355366 A CN 201710355366A CN 107257002 A CN107257002 A CN 107257002A
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01P—WAVEGUIDES; RESONATORS, LINES, OR OTHER DEVICES OF THE WAVEGUIDE TYPE
- H01P5/00—Coupling devices of the waveguide type
- H01P5/12—Coupling devices having more than two ports
- H01P5/16—Conjugate devices, i.e. devices having at least one port decoupled from one other port
- H01P5/18—Conjugate devices, i.e. devices having at least one port decoupled from one other port consisting of two coupled guides, e.g. directional couplers
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Abstract
It is by contacting the odt circuit combined by two pieces of identical substrate integration wave-guides the invention discloses a kind of wide wall micropore couplers of the dB of substrate integration wave-guide 3；Improved micro-strip passes through trapezoidal gradual change access substrate integration wave-guide to the transition circuit of substrate integration wave-guide；The present invention has opened two rows on the public ground level of substrate integration wave-guide, and totally 10 circular apertures realize the purpose of Small aperture coupling, and finally realize 3 dB close coupling effect.Wherein, substrate integration wave-guide is realized by designing a series of metallic vias on a printed circuit.The present invention can smoothly realize the 3 dB couplings between double-layer substrate integration waveguide, 90 ° of phase shifts between straight-through end and coupled end are realized simultaneously, relative to the waveguide coupler of equivalent technology, the present invention improves the performance of coupler while coupler area is reduced, manufacture craft is simple, with low cost.
Description
Technical field
The present invention relates to a kind of wide wall micropore couplers of substrate integration wave-guide 3-dB, belong to microwave technical field.
Background technology
With developing rapidly for modern technologies, wireless communication technology develops to high speed, multiband, Large Copacity direction.
Coupler is allocated as having a wide range of applications used in microwave technical field due to being easily achieved the work(of any power inphase/orthogonal.
Coupler is widely used among wireless set and phased array antenna as core devices, but traditional waveguide is small
Hole coupler is stereochemical structure, volume is big, it is integrated to be not easy to, and significantly limit the coupler scope of application.
Substrate integrated waveguide technology causes microwave device to have broader development, and substrate integrated waveguide technology has volume
The features such as small, lightweight, high quality factor, low insertion loss, high integration, high power capacity.
The content of the invention
The technical problems to be solved by the invention are to provide a kind of wide wall micropore couplers of substrate integration wave-guide 3-dB, with reference to
The SIW Planar coupler structures of microstrip structure, overcome conventional waveguide coupler stereochemical structure big, it is difficult to the characteristics of integrated,
Microwave is integrated, have important application value in miniaturized circuit.The present invention by the double-deck micropore coupler of studying planeization,
Expand application of the double-deck micropore coupler of the planarization in modern microwave millimetre-wave circuit is integrated.
The present invention uses following technical scheme to solve above-mentioned technical problem：
The present invention provides a kind of wide wall micropore couplers of substrate integration wave-guide 3-dB, including stack the top layer dielectric substrate placed and
Underlying dielectric substrate, wherein, the upper surface of top layer dielectric substrate is provided with top layer metallic layer, top layer dielectric substrate and underlying dielectric
Metallic intermediate layer layer is provided between substrate, the lower surface of underlying dielectric substrate is provided with bottom metal layer；
Stack the top layer dielectric substrate the placed plated-through hole parallel with two rows are provided with underlying dielectric substrate, this two row gold
Categoryization through hole constitutes the first substrate integration wave-guide, this two rows metal with top layer metallic layer, top layer dielectric substrate, metallic intermediate layer layer
Change through hole and constitute the second substrate integration wave-guide with metallic intermediate layer layer, underlying dielectric substrate, bottom metal layer；
The upper surface of top layer dielectric substrate is provided with two and is connected respectively with the first substrate integration wave-guide upper surface metal level two ends
Microstrip line；The lower surface of underlying dielectric substrate be provided with two respectively with the second substrate integration wave-guide lower surface metal layer two ends
The microstrip line of connection；
The parallel circular hole of two rows is also provided with metallic intermediate layer layer, this two rows circular hole is parallel with plated-through hole and two neighboring
Spacing between the center of circle of circular hole is equal.
As the further technical scheme of the present invention, two row's circular holes on the metallic intermediate layer layer are located at substrate collection respectively
Into at a quarter between the row's plated-through hole of waveguide two and 3/4ths positions.
As the further technical scheme of the present invention, two row's circular hole sizes on metallic intermediate layer layer are completely the same,
And often the quantity of row's circular hole is N >=5.
As the further technical scheme of the present invention, in the often row circular hole on metallic intermediate layer layer, two neighboring circle
Spacing is a quarter operation wavelength between the center of circle in hole.
As the further technical scheme of the present invention, every microstrip line passes through a trapezoidal microband paste and half respectively
The metal level connection of mould substrate integration wave-guide.
The present invention uses above technical scheme compared with prior art, with following technique effect：Design structure of the present invention
Simply, 3-dB coupling operationals band is roomy, and its double-decker is more suitably applied to existing compared with conventional stereo, sandwich construction coupler
For microwave and millimeter wave circuit it is integrated in.Meanwhile, using substrate integrated waveguide technology, structure is extremely compact, reduces difficulty of processing,
Reduce processing cost.Relative to current waveguide coupler, the narrow wall micropore coupler of substrate integration wave-guide has different journeys
Volume on degree reduces.
Brief description of the drawings
Fig. 1 is double-layer substrate integration waveguide schematic diagram.
Fig. 2 is the three dimensional structure diagram of the wide wall micropore couplers of substrate integration wave-guide 3-dB of the present invention.
Fig. 3 is the three-dimensional dividing figure of the wide wall micropore couplers of substrate integration wave-guide 3-dB of the present invention.
Wherein, 1 is top layer metallic layer, and 2 be top layer dielectric substrate, and 3 be metallic intermediate layer layer, and 4 be underlying dielectric substrate, 5
It is bottom metal layer.
Fig. 4 is the top view of the wide wall micropore couplers of substrate integration wave-guide 3-dB of the present invention.
Fig. 5 is coupler top dielectric internal electric field distribution top view of the present invention.
Fig. 6 is coupler layer dielectric internal electric field distribution top view of the present invention.
Fig. 7（a）It is the S parameter emulation and measured result contrast of coupler of the present invention.
Fig. 7（b）It is that the straight-through end of coupler of the present invention and the emulation of coupled end phase difference and measured result are contrasted.
Embodiment
Below in conjunction with the accompanying drawings and specific embodiment is described in further detail to technical scheme：
The present invention provides a kind of wide wall micropore couplers of substrate integration wave-guide 3-dB, as shown in Figures 2 to 4, including stacks what is placed
Top layer dielectric substrate and underlying dielectric substrate, wherein, the upper surface of top layer dielectric substrate is provided with top layer metallic layer, top layer medium
Metallic intermediate layer layer is provided between substrate and underlying dielectric substrate, the lower surface of underlying dielectric substrate is provided with underlying metal
Layer.Stack the top layer dielectric substrate the placed plated-through hole parallel with two rows are provided with underlying dielectric substrate, this two row gold
Categoryization through hole constitutes the first substrate integration wave-guide, this two rows metal with top layer metallic layer, top layer dielectric substrate, metallic intermediate layer layer
Change through hole and constitute the second substrate integration wave-guide with metallic intermediate layer layer, underlying dielectric substrate, bottom metal layer.Top layer dielectric substrate
Upper surface be provided with two microstrip lines being connected respectively with the first substrate integration wave-guide upper surface metal level two ends；Underlying dielectric
The lower surface of substrate is provided with two microstrip lines being connected respectively with the second substrate integration wave-guide lower surface metal layer two ends；Every
The microstrip line is connected by the metal level of trapezoidal a microband paste and half module substrate integrated wave guide respectively, is used as the coupler
Input port, straight-through port, coupling port and isolated port.The parallel circular hole of two rows is also provided with metallic intermediate layer layer,
This two rows circular hole is parallel with plated-through hole, and the spacing between the center of circle of two neighboring circular hole is equal.Two row's circular holes distinguish position
Between the row's plated-through hole of substrate integration wave-guide two at a quarter and 3/4ths positions, two row's circular hole sizes complete one
Cause, and often arrange quantity N >=5 of circular hole.Often in row's circular hole, spacing is a quarter operating wave between the center of circle of two neighboring circular hole
It is long.
The wide wall micropore couplers of substrate integration wave-guide 3-dB of the present invention, are that one kind is improved by Guide of Wide Wall micropore coupler
The wide wall micropore coupler of double-deck 3-dB substrate integration wave-guides.Coupler of the present invention is led to by two pieces of identical substrate integration wave-guides
Cross the odt circuit that contact is combined；Improved micro-strip passes through trapezoidal gradual change access base to the transition circuit of substrate integration wave-guide
Piece integrated waveguide.The present invention has opened two rows on the public ground level of substrate integration wave-guide, and totally 10 circular apertures realize aperture
The purpose of coupling, and finally realize 3-dB close coupling effect.
Wherein, substrate integration wave-guide is realized by designing a series of metallic vias on a printed circuit（Substrate collection
The distance between the size and through hole for also having metal throuth hole into the size of waveguide are determined by working frequency range）.The present invention can be smoothly real
3-dB couplings between existing double-layer substrate integration waveguide, while 90 ° of phase shifts between straight-through end and coupled end are realized, relative to
The waveguide coupler of equivalent technology, the present invention improves the performance of coupler, manufacture craft while coupler area is reduced
Simply, it is with low cost.
In the present invention, two pieces of substrate integration wave-guide consistencies from top to bottom are placed, as shown in figure 1, the double-layer substrate integration waveguide by
Top layer metallic layer, dielectric substrate are included under up to successively（Using the dielectric-slabs of Rogers 5880, dielectric constant is 2.2, and thickness is
0.5 millimeter）, metallic intermediate layer layer, dielectric substrate（Using the dielectric-slabs of Rogers 5880, dielectric constant is 2.2, and thickness is 0.5
Millimeter）And bottom metal layer, it is uniform-distribution with plated-through hole on its long side.
As shown in figure 3, the perforate on the public face of double-layer substrate integration waveguide, the energy in two layers of substrate integrated waveguide up and down
Amount is coupled by this 10 apertures.Four microstrip lines connect the two ends of two layers of substrate integrated waveguide respectively, are used as the coupling
Input port, straight-through port, coupling port and the isolated port of device.Because whole coupler structure is symmetrical, so appointing
Meaning a port can serve as input port, if input port has determined, then another port with layer is exactly straight-through
End, the corresponding another layer of input homonymy is isolation end, and it is then coupled end to lead directly to the corresponding port of end homonymy.All 4 ends
Mouthful and substrate integration wave-guide an indirect trapezoidal microband paste to realize impedance matching.In the coupler of the present invention, coupling
Aperture is placed on a quarter between the row's metallic vias of substrate integration wave-guide two on the basis for keeping fixed circle center distance
With 3/4ths position, two row's circular hole sizes are completely the same, have reached most strong coupling effect.The impedance of four microstrip lines is equal
For 50 ohm, and total is rotationally symmetrical on 180 ° of center line.
The coupler of the present invention as shown in Figures 3 and 4, can cut off certain media substrate in actual fabrication, with convenient
The welding of sub-miniature A connector；It can also be punched at the edge of dielectric substrate, two layer medium substrate is fixed on one by screw and nut
Rise.
Fig. 5 is coupler top dielectric internal electric field distribution top view of the present invention, and Fig. 6 is coupler layer dielectric of the present invention
Internal electric field is distributed top view, Fig. 7（a）And Fig. 7（b）For the simulation result of coupler of the present invention, it follows that present invention coupling
A width of 7GHz ~ the 10GHz of 3-dB straps of device, centre frequency is 8.5GHz, and relative bandwidth is 35.3%.The echo of input port
Loss is more than 12.5dB.The isolation of input and isolation end is more than 15dB, and isolation effect is very good.Straight-through end and coupled end
It is 90 ° ± 5 ° in the phase difference of working frequency range, meets the requirement of orthogonal 3-dB couplers.
The wide wall micropore couplers of substrate integration wave-guide 3-dB of the present invention, pass through circular coupling aperture two layers up and down and complete 3-dB
Coupling.Bethe holes coupling technique is combined by the present invention with substrate integration wave-guide SIW technologies, only with double 10 coupling apertures
The effect of 3-dB couplings is reached.Meanwhile, it is compared to the substrate integration waveguide coupler of similar techniques, coupling of the invention
Device return loss on the premise of smaller refer to is smaller, and coupling bandwidth is wider.Compact conformation of the present invention, superior performance, be easy to plus
Work and integrated, realize circuit planarization and multilayer hybrid circuit it is integrated, to the strict microwave electricity of size and performance requirement
In road and system, there is very wide application prospect.
It is described above, it is only the embodiment in the present invention, but protection scope of the present invention is not limited thereto, and appoints
What be familiar with the people of the technology disclosed herein technical scope in, it will be appreciated that the conversion or replacement expected, should all cover
Within the scope of the present invention, therefore, protection scope of the present invention should be defined by the protection domain of claims.
Claims (5)
1. the wide wall micropore couplers of substrate integration wave-guide 3-dB, it is characterised in that the top layer dielectric substrate placed including stacking and
Underlying dielectric substrate, wherein, the upper surface of top layer dielectric substrate is provided with top layer metallic layer, top layer dielectric substrate and underlying dielectric
Metallic intermediate layer layer is provided between substrate, the lower surface of underlying dielectric substrate is provided with bottom metal layer；
Stack the top layer dielectric substrate the placed plated-through hole parallel with two rows are provided with underlying dielectric substrate, this two row gold
Categoryization through hole constitutes the first substrate integration wave-guide, this two rows metal with top layer metallic layer, top layer dielectric substrate, metallic intermediate layer layer
Change through hole and constitute the second substrate integration wave-guide with metallic intermediate layer layer, underlying dielectric substrate, bottom metal layer；
The upper surface of top layer dielectric substrate is provided with two and is connected respectively with the first substrate integration wave-guide upper surface metal level two ends
Microstrip line；The lower surface of underlying dielectric substrate be provided with two respectively with the second substrate integration wave-guide lower surface metal layer two ends
The microstrip line of connection；
The parallel circular hole of two rows is also provided with metallic intermediate layer layer, this two rows circular hole is parallel with plated-through hole and two neighboring
Spacing between the center of circle of circular hole is equal.
2. the wide wall micropore couplers of substrate integration wave-guide 3-dB according to claim 1, it is characterised in that the intermediate layer
Two row's circular holes on metal level are located between the row's plated-through hole of substrate integration wave-guide two a quarter and 3/4ths respectively
Put place.
3. the wide wall micropore couplers of substrate integration wave-guide 3-dB according to claim 1, it is characterised in that the intermediate layer
Two row's circular hole sizes on metal level are completely the same, and often the quantity of row's circular hole is N >=5.
4. the wide wall micropore couplers of substrate integration wave-guide 3-dB according to claim 1, it is characterised in that the intermediate layer
In often row circular hole on metal level, spacing is a quarter operation wavelength between the center of circle of two neighboring circular hole.
5. the wide wall micropore couplers of substrate integration wave-guide 3-dB according to claim 1, it is characterised in that every is described micro-
Connected respectively by the metal level of trapezoidal a microband paste and half module substrate integrated wave guide with line.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201710355366.4A CN107257002A (en) | 2017-05-19 | 2017-05-19 | The wide wall micropore couplers of the dB of substrate integration wave-guide 3 |
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| Application Number | Priority Date | Filing Date | Title |
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| CN201710355366.4A CN107257002A (en) | 2017-05-19 | 2017-05-19 | The wide wall micropore couplers of the dB of substrate integration wave-guide 3 |
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| CN201710355366.4A Pending CN107257002A (en) | 2017-05-19 | 2017-05-19 | The wide wall micropore couplers of the dB of substrate integration wave-guide 3 |
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Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN108511868A (en) * | 2018-05-09 | 2018-09-07 | 南京邮电大学 | A kind of multilayer 3dB directional couplers based on class pectinate line substrate integration wave-guide |
| CN108539351A (en) * | 2018-05-09 | 2018-09-14 | 南京邮电大学 | Directional coupler based on half module class pectinate line substrate integration wave-guide |
| CN109390650A (en) * | 2018-10-24 | 2019-02-26 | 南京邮电大学 | Minimize double-layer substrate integration waveguide Six-port waveguide parts |
| CN110061337A (en) * | 2019-05-06 | 2019-07-26 | 云南大学 | Directional coupler based on encapsulation type integral substrate gap waveguide |
| WO2021082293A1 (en) * | 2019-10-28 | 2021-05-06 | 南京邮电大学 | Miniaturized e-plane coupler having slow-wave half-mode substrate integrated waveguide |
| CN113506969A (en) * | 2021-06-21 | 2021-10-15 | 电子科技大学 | X-waveband magnetic control coupling coefficient adjustable directional coupler |
Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103066367A (en) * | 2012-09-12 | 2013-04-24 | 电子科技大学 | Integrated Waveguide Directional Coupler |
| CN106532217A (en) * | 2016-10-26 | 2017-03-22 | 哈尔滨工业大学 | Full-modal-waveguide-structure-based substrate-integrated waveguide directional coupler |
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2017
- 2017-05-19 CN CN201710355366.4A patent/CN107257002A/en active Pending
Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103066367A (en) * | 2012-09-12 | 2013-04-24 | 电子科技大学 | Integrated Waveguide Directional Coupler |
| CN106532217A (en) * | 2016-10-26 | 2017-03-22 | 哈尔滨工业大学 | Full-modal-waveguide-structure-based substrate-integrated waveguide directional coupler |
Cited By (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN108511868A (en) * | 2018-05-09 | 2018-09-07 | 南京邮电大学 | A kind of multilayer 3dB directional couplers based on class pectinate line substrate integration wave-guide |
| CN108539351A (en) * | 2018-05-09 | 2018-09-14 | 南京邮电大学 | Directional coupler based on half module class pectinate line substrate integration wave-guide |
| CN109390650A (en) * | 2018-10-24 | 2019-02-26 | 南京邮电大学 | Minimize double-layer substrate integration waveguide Six-port waveguide parts |
| CN109390650B (en) * | 2018-10-24 | 2021-06-08 | 南京邮电大学 | Miniaturized double-layer substrate integrated waveguide six-port device |
| CN110061337A (en) * | 2019-05-06 | 2019-07-26 | 云南大学 | Directional coupler based on encapsulation type integral substrate gap waveguide |
| CN110061337B (en) * | 2019-05-06 | 2023-10-27 | 云南大学 | Directional coupler based on packaging type integrated substrate gap waveguide |
| WO2021082293A1 (en) * | 2019-10-28 | 2021-05-06 | 南京邮电大学 | Miniaturized e-plane coupler having slow-wave half-mode substrate integrated waveguide |
| CN113506969A (en) * | 2021-06-21 | 2021-10-15 | 电子科技大学 | X-waveband magnetic control coupling coefficient adjustable directional coupler |
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Application publication date: 20171017 |