CN107256741A - A kind of method of solvent evaporation annealing enhancing metal nanometer line transparent conductive film performance - Google Patents
A kind of method of solvent evaporation annealing enhancing metal nanometer line transparent conductive film performance Download PDFInfo
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- CN107256741A CN107256741A CN201710345105.4A CN201710345105A CN107256741A CN 107256741 A CN107256741 A CN 107256741A CN 201710345105 A CN201710345105 A CN 201710345105A CN 107256741 A CN107256741 A CN 107256741A
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Abstract
The invention discloses a kind of method of solvent evaporation annealing enhancing metal nanometer line transparent conductive film performance.The characteristics of this method is typically soluble in polar solvent using metal nanometer line surface ligand PVP, evaporate method for annealing to remove metal nanometer line surface ligand PVP by lower boiling alcohols solvent, reduce the contact resistance between metal nanometer line, reach the purpose of the square resistance of reduction metal nanometer line transparent conductive film.The inventive method technical process is simple, cost is low, can evaporate annealing time by adjusting solvent, realize the regulation contact resistance size metal nanometer line, realize the regulation and control to metal nanometer line transparent conductive film square resistance；Metal nanometer line transparent conductive film after processing, compared to undressed original metal nano wire transparent conductive film, square resistance reduces 8% ~ 50%.
Description
Technical field
The present invention relates to the transparent conductive film preparing technical field of photoelectric device, and in particular to a kind of solvent evaporation annealing
Strengthen the method for metal nanometer line transparent conductive film performance.
Technical background
With the sustained and rapid development of modern opto-electronics, many aspects of the transparent conductive film in social life in recent years
Applied, and come into daily life.Transparent conductive film is mainly used in such as FPD, e-book, intelligence
The field of photoelectric devices such as energy mobile phone, intelligent glass, touch-screen, light emitting diode and solar cell.At present, compare and be widely used for
The material for making transparent conductive film is the metal oxide of doping, the indium oxide of such as tin dope（ITO）, aluminium doping zinc oxide
（AZO）With the tin oxide of Fluorin doped（FTO）Deng.Although current commercialized ITO, AZO, FTO transparent conductive film has excellent
Optically and electrically performance, but the increase with industrial quarters to transparent conductive electrode demand the miniaturization of photoelectric device and can wear
The appearance of equipment is worn, these three transparent conductive films can not meet answering in consumer electronics of future generation and clean energy resource field
With.In recent years, it has been developed that some nano-functional materials replace ITO.Representative has：Conducting polymer, carbon
Nanotube, graphene and metal nanometer line.In these materials, nano silver wire is used as the Typical Representative of metal nano material, tool
There is the features such as higher conductance, thermal conductivity, flexibility and solution are processed, it has also become be most hopeful to substitute ITO electrically conducting transparent electricity
Pole material.The film build method of common metal nanometer line has a lot, such as spin-coating method, Meyer rod method, spraying process, vacuum filtration method and
Roll-to-rool printings etc., these film build methods are developed rapidly the preparation and application of metallic transparent conductive film,
Also flexible photoelectric device is maked it possible.
At present, metal nanometer line can be prepared on a large scale using liquid phase low temperature synthetic method, general using exhausted in building-up process
The surface ligand polyvinylpyrrolidone (PVP) of edge regulates and controls its size and dispersiveness, and excessive PVP end-capping reagents covering can shield
The surface charge of nano wire, causes the Van der Waals force between nano wire to play a major role, and is easily caused the bundle shape aggregation of nano wire,
Also increase the contact resistance between metal nanometer line simultaneously.For example：For nano silver wire transparent conductive film, R. M.Mutiso etc.
People is combined method to analyze effective contact resistance between AgNWs by numerical simulation and experiment data, and discovery exists for diameter
50 ~ 80 nm scope AgNWs conductive films, its effective contact resistance is in 1.5 ~ 2.5 K Ω（ACS Nano, 7: 7654
(2013)）.In order to reduce the contact resistance between AgNWs, it is necessary to introduce some post-processing technologies, California, USA university Los Angeles point
The Yang Yang in school（ACS Nano, 5: 9877(2011)）With the Jooho Moon of Univ Yonsei Seoul of South Korea（ACS Nano, 7:
1081(2013)）Oxide nano-particles are used Deng seminar, such as TiO2, ZnO come as node fusion agent or surface capping agents
Improve the contact between AgNWs nodes.In addition, also researcher uses nano-weld technology（Nat. Mater., 11: 241
(2012)）Deng node loose between nano wire is welded, increases its electric conductivity.But, the general all mistakes of these processing methods
Journey is complicated or cost is high.
Usual PVP layers of metal nanometer line surface ligand is by weak Van der Waals for beam with its metal nanometer line surface
It is tied together, part PVP is typically removed by polar solvent repeated washing and centrifugation, and AgNWs can be caused by removing excessive PVP
Difficulties in dispersion, is unfavorable for solution processing and prepares transparent conductive film.
The content of the invention
In view of the deficiencies of the prior art, the present invention provides a kind of solvent evaporation annealing enhancing metal nanometer line electrically conducting transparent
The method of film performance.The characteristics of this method is typically soluble in polar solvent using metal nanometer line surface ligand PVP, by low
The alcohols solvent of boiling point evaporates method for annealing to remove metal nanometer line surface ligand PVP, reduces the contact between metal nanometer line
Resistance, reaches the purpose of the square resistance of reduction metal nanometer line transparent conductive film.
The present invention is achieved through the following technical solutions.
A kind of method of solvent evaporation annealing enhancing metal nanometer line transparent conductive film performance, comprises the following steps：
（1）Metal nanometer line dispersion liquid is prepared into metal nanowire thin-films by solution processing mode on substrate, then at heat
Reason removes residual solvent, obtains metal nanometer line transparent conductive film；
（2）Obtained metal nanometer line transparent conductive film is placed in closed container, lower boiling alcohols solvent, metal is added
Nano wire transparent conductive film is not directly contacted with lower boiling alcohols solvent, carries out solvent evaporation in-situ annealing processing；
In solvent evaporation in-situ annealing processing procedure, lower boiling alcohols solvent evaporation forms drop on metal nanometer line surface,
It is partly dissolved the surface ligand PVP of metal nanometer line and PVP is departed from from metal nanometer line surface, realizes and reduce metal nanometer line
Between contact resistance, reduce metal nanometer line transparent conductive film square resistance purpose；
（3）After solvent evaporation annealing terminates, metal nanometer line transparent conductive film is taken out, is placed in thermal station and heats,
Residual solvent is removed, the metal nanometer line transparent conductive film of performance enhancement is obtained.
Further, step（1）In, the metal nanometer line is received including nanowires of gold, nano silver wire, copper nano-wire or nickel
Rice noodles.
Further, step（1）In, the mass fraction 0.01% ~ 3% of the metal nanometer line dispersion liquid, dispersion liquid it is molten
Agent includes methanol, ethanol or isopropanol.
Further, step（1）In, the solution processing mode include spin-coating method, spraying process, self assembly czochralski method, step
Rod method or vacuum filtration method.
Further, step（1）In, the substrate is transparent substrates, including glass substrate, polyethylene terephthalate
Fat substrate, polyimide substrate, dimethyl silicone polymer substrate, polymethyl methacrylate substrate or polycarbonate substrate.
Further, step（1）In, the heat treatment is 10 ~ 20min of heating at 80 ~ 100 DEG C.
Further, step（2）In, the lower boiling alcohols solvent includes methanol, ethanol or isopropanol etc..
Further, step（2）In, the addition of the lower boiling alcohols solvent is the amount of metal nanometer line dispersion liquid
10% ~ 20%.
Further, step（2）In, the solvent evaporation in-situ annealing processing is to add after lower boiling alcohols solvent
Closed container be placed in room temperature environment place 1 ~ 3 hour.
Further, step（3）In, the heating is to heat 10 ~ 30min at 70 ~ 100 DEG C.
Further, the metal nanometer line transparent conductive film finally given, compared to undressed original metal nanometer
Line transparent conductive film, square resistance reduces 8% ~ 50%.
Compared with prior art, the invention has the advantages that and beneficial effect：
（1）The inventive method has the advantages that technical process is simple, cost is low；
（2）The present invention can evaporate annealing time by adjusting solvent, realize the regulation contact resistance size metal nanometer line,
Realize the regulation and control to metal nanometer line transparent conductive film square resistance；
（3）Metal nanometer line transparent conductive film after the inventive method processing, compared to undressed original metal nano wire
Transparent conductive film, square resistance reduces 8% ~ 50%.
Brief description of the drawings
Fig. 1 a are the high contact resistance between the AgNWs surface ligand PVP and its nano silver wire used in specific embodiment
Schematic diagram；
Fig. 1 b are the low contact resistance signal between the AgNWs surface ligand PVP and its nano silver wire used in specific embodiment
Figure；
Fig. 2 is AgNWs solvent anneal schematic diagrames in embodiment 1；
Fig. 3 a and Fig. 3 b are AgNWs surface ligand PVP after the preceding evaporation annealing with solvent of solvent evaporation annealing in embodiment 1
TEM schemes.
Embodiment
Come below in conjunction with specific embodiment to solvent of the present invention evaporation annealing enhancing metal nanometer line electrically conducting transparent
Film performance and preparation method thereof is described in further detail.But protection domain of the presently claimed invention is not limited to embodiment
Involved scope.
Solvent evaporation annealing technology of the present invention is existed using low boiling alcohols solvents such as methanol, ethanol or isopropanols
Volatilized in closed container, then dissolve the surface ligand PVP of metal nanometer line into droplet in metal nanometer line surface aggregation,
Cause PVP parts from metal nanometer line surface to depart to reduce the contact resistance between metal nanometer line, realize that reducing metal receives
The purpose of rice noodles transparent membrane square resistance.
The nano silver wire used in the specific embodiment of the invention（AgNWs）Surface ligand PVP and its nano silver wire between
High and low contact resistance schematic diagram is shown as illustrated in figs. 1A and ib respectively, from Fig. 1 a and Fig. 1 b, AgNWs surface ligand
When PVP layers thicker, the contact resistance between nano silver wire is larger；When AgNWs PVP layers of surface ligand is relatively thin, between nano silver wire
Contact resistance is low.
Embodiment 1
A kind of method of solvent evaporation annealing enhancing metal nanometer line transparent conductive film performance, comprises the following steps：
（1）Isopropanol is used for solvent, nano silver wire is made into the nano silver wire solution that mass fraction is 1%, the grain of nano silver wire
Electrical path length is 10 ~ 50 μm, a diameter of 20 ~ 80 nm, and after being shaken up with shaking table, is filtered by vacuum with miillpore filter, obtains equal
It is even to disperse and without the dispersion liquid for the nano silver wire isopropanol substantially reunited；
（2）Follow the steps below cleaning successively to glass substrate：Washing lotion ultrasound 10 minutes, acetone ultrasonic 10 minutes, deionized water
Ultrasound 10 minutes, isopropanol ultrasound 10 minutes, it is stand-by after drying；
（3）Glass is subjected to oxygen plasma cleaning, then, the dispersion liquid of nano silver wire isopropanol glass substrate is spin-coated on
On, spin coating rotating speed is 2500 r/min, and spin-coating time is 60 s, and the nano silver wire for covering 120 nm in glass substrate surface is thin
Film, 80 DEG C are heated 15 minutes in thermal station, obtain nano silver wire transparent conductive film；
（4）Prepared nano silver wire transparent conductive film is positioned in closed container, methanol solvate is added dropwise in a reservoir（Phase
Dispersion liquid spin coating amount for nano silver wire isopropanol is 10%）, nano silver wire transparent conductive film is not directly contacted with methanol,
Then close the lid；Placed 3 hours under room temperature environment, methanol solvate is carried out solvent evaporation annealing, partly go desilver
The surface ligand PVP of nano wire；As shown in Figure 2, metal nanowire thin-films are as closing for methanol solvate evaporation annealing schematic diagram
Container in, while bottom in container adds lower boiling alcohols solvent, treat that alcohols solvent evaporates to form gas；Metal nano
After line film stands 3 hours in the steam of alcohols solvent, that is, represent solvent evaporation annealing；
（5）After solvent evaporation annealing terminates, nano silver wire transparent conductive film is taken out, is placed in thermal station and heats, put
Put 80 DEG C of heating in thermal station and remove remaining methanol solvate in 30 minutes, obtain the nano silver wire transparent conductive film of performance enhancement.
Fig. 3 a and Fig. 3 b are respectively that the surface of the nano silver wire before methanol solvate evaporation annealing and go out after reason is matched somebody with somebody
Body PVP TEM figures, will become apparent from after methanol solvate evaporation annealing, the surface ligand of nano silver wire from TEM test results
PVP removal effect highly significant, so that the contact resistance between nano silver wire reduces, final substantially reduction nano silver wire is transparent
The square resistance of conductive film；Light transmittance of the initial nano silver wire transparent conductive film at 550 nm is 90 %, by methanol
Solvent evaporation annealing can make its square resistance be reduced to 24.7 Ω/ from 44.1 Ω/, in addition, molten after 3 hours
Agent evaporation annealing technology does not influence on the light transmittance of nano silver wire transparent conductive film.
Embodiment 2
A kind of method of solvent evaporation annealing enhancing metal nanometer line transparent conductive film performance, comprises the following steps：
（1）Ethanol is used for solvent, nano silver wire is made into the nano silver wire solution that mass fraction is 0.01%, nano silver wire
Particle diameter length is 10 ~ 50 μm, a diameter of 20 ~ 80 nm, and after being shaken up with shaking table, is filtered by vacuum, obtained with miillpore filter
It is dispersed and without the dispersion liquid for the nano silver wire ethanol substantially reunited；
（2）Follow the steps below cleaning successively to glass substrate：Washing lotion ultrasound 10 minutes, acetone ultrasonic 10 minutes, deionized water
Ultrasound 10 minutes, isopropanol ultrasound 10 minutes, it is stand-by after drying；
（3）Glass is subjected to oxygen plasma cleaning, then, by the dispersion liquid spin coating of nano silver wire ethanol on a glass substrate,
Spin coating rotating speed is 2500 r/min, and spin-coating time is 60 s, and 120 nm nano silver wire film is covered in glass substrate surface,
100 DEG C are heated 8 minutes in thermal station, obtain nano silver wire transparent conductive film；
（4）Prepared nano silver wire transparent conductive film is positioned in closed container, methanol solvate is added dropwise in a reservoir（Phase
Dispersion liquid spin coating amount for nano silver wire isopropanol is 15%）, nano silver wire transparent conductive film is not directly contacted with methanol,
Then close the lid；Placed 1 hour under room temperature environment, methanol solvate is carried out solvent evaporation annealing, partly go desilver
The surface ligand PVP of nano wire；As shown in Figure 2, metal nanowire thin-films are as closing for methanol solvate evaporation annealing schematic diagram
Container in, while bottom in container adds lower boiling alcohols solvent, treat that alcohols solvent evaporates to form gas；Metal nano
After line film stands 1 hour in the steam of alcohols solvent, that is, represent solvent evaporation annealing；
（5）After solvent evaporation annealing terminates, nano silver wire transparent conductive film is taken out, is placed in thermal station and heats, put
Put 70 DEG C of heating in thermal station and remove remaining methanol solvate in 25 minutes, obtain the nano silver wire transparent conductive film of performance enhancement.
After methanol solvate evaporation annealing, the surface ligand PVP of nano silver wire removal effect highly significant, so that
Contact resistance between nano silver wire reduces, the square resistance of final substantially reduction nano silver wire transparent conductive film；Initial silver is received
Light transmittance of the rice noodles transparent conductive film at 550 nm is 86 %, can be with after methanol solvate evaporation annealing 1 hour
Its square resistance is set to be reduced to 37.6 Ω/ from 42.3 Ω/, in addition, solvent evaporates annealing technology to nano silver wire
The light transmittance of transparent conductive film does not influence.
Embodiment 3
A kind of method of solvent evaporation annealing enhancing metal nanometer line transparent conductive film performance, comprises the following steps：
（1）Methanol is used for solvent, nano silver wire is made into the nano silver wire solution that mass fraction is 3%, the particle diameter of nano silver wire
Length is 10 ~ 50 μm, a diameter of 20 ~ 80 nm, and after being shaken up with shaking table, is filtered by vacuum with miillpore filter, is obtained uniformly
Disperse and without the dispersion liquid for the nano silver wire methanol substantially reunited；
（2）Follow the steps below cleaning successively to glass substrate：Washing lotion ultrasound 10 minutes, acetone ultrasonic 10 minutes, deionized water
Ultrasound 10 minutes, isopropanol ultrasound 10 minutes, it is stand-by after drying；
（3）Glass is subjected to oxygen plasma cleaning, then, by the dispersion liquid spin coating of nano silver wire methanol on a glass substrate,
Spin coating rotating speed is 2500 r/min, and spin-coating time is 60 s, and 120 nm nano silver wire film is covered in glass substrate surface,
85 DEG C are heated 20 minutes in thermal station, obtain nano silver wire transparent conductive film；
（4）Prepared nano silver wire transparent conductive film is positioned in closed container, methanol solvate is added dropwise in a reservoir（Phase
Dispersion liquid spin coating amount for nano silver wire isopropanol is 20%）, nano silver wire transparent conductive film is not directly contacted with methanol,
Then close the lid；Placed 2 hours under room temperature environment, methanol solvate is carried out solvent evaporation annealing, partly go desilver
The surface ligand PVP of nano wire；As shown in Figure 2, metal nanowire thin-films are as closing for methanol solvate evaporation annealing schematic diagram
Container in, while bottom in container adds lower boiling alcohols solvent, treat that alcohols solvent evaporates to form gas；Metal nano
After line film stands 2 hours in the steam of alcohols solvent, that is, represent solvent evaporation annealing；
（5）After solvent evaporation annealing terminates, nano silver wire transparent conductive film is taken out, is placed in thermal station and heats, put
Put 100 DEG C of heating in thermal station and remove remaining methanol solvate in 10 minutes, obtain the nano silver wire transparent conductive film of performance enhancement.
After methanol solvate evaporation annealing, the surface ligand PVP of nano silver wire removal effect highly significant, so that
Contact resistance between nano silver wire reduces, the square resistance of final substantially reduction nano silver wire transparent conductive film；Initial silver is received
Light transmittance of the rice noodles transparent conductive film at 550 nm is 92 %, can be with after methanol solvate evaporation annealing 2 hours
Its square resistance is set to be reduced to 23.7 5 Ω/ from 43.5 Ω/, in addition, solvent evaporates annealing technology to nano silver wire
The light transmittance of transparent conductive film does not influence.
Claims (10)
1. a kind of method of solvent evaporation annealing enhancing metal nanometer line transparent conductive film performance, it is characterised in that including such as
Lower step：
（1）Metal nanometer line dispersion liquid is prepared into metal nanowire thin-films by solution processing mode on substrate, then at heat
Reason removes residual solvent, obtains metal nanometer line transparent conductive film；
（2）Obtained metal nanometer line transparent conductive film is placed in closed container, lower boiling alcohols solvent, metal is added
Nano wire transparent conductive film is not directly contacted with lower boiling alcohols solvent, carries out solvent evaporation in-situ annealing processing；
（3）After solvent evaporation annealing terminates, metal nanometer line transparent conductive film is taken out, is placed in thermal station and heats,
Residual solvent is removed, the metal nanometer line transparent conductive film of performance enhancement is obtained.
2. a kind of side of solvent evaporation annealing enhancing metal nanometer line transparent conductive film performance according to claim 1
Method, it is characterised in that step（1）In, the metal nanometer line includes nanowires of gold, nano silver wire, copper nano-wire or nickel nanometer
Line；The mass fraction 0.01% ~ 3% of the metal nanometer line dispersion liquid, the solvent of dispersion liquid includes methanol, ethanol or isopropanol.
3. a kind of side of solvent evaporation annealing enhancing metal nanometer line transparent conductive film performance according to claim 1
Method, it is characterised in that step（1）In, the solution processing mode includes spin-coating method, spraying process, self assembly czochralski method, Meyer rod
Method or vacuum filtration method.
4. a kind of side of solvent evaporation annealing enhancing metal nanometer line transparent conductive film performance according to claim 1
Method, it is characterised in that step（1）In, the substrate is transparent substrates, including glass substrate, polyethylene terephthalate
Substrate, polyimide substrate, dimethyl silicone polymer substrate, polymethyl methacrylate substrate or polycarbonate substrate.
5. a kind of side of solvent evaporation annealing enhancing metal nanometer line transparent conductive film performance according to claim 1
Method, it is characterised in that step（1）In, the heat treatment is 8 ~ 20min of heating at 80 DEG C ~ 100 DEG C.
6. a kind of side of solvent evaporation annealing enhancing metal nanometer line transparent conductive film performance according to claim 1
Method, it is characterised in that step（2）In, the lower boiling alcohols solvent includes methanol, ethanol or isopropanol.
7. a kind of side of solvent evaporation annealing enhancing metal nanometer line transparent conductive film performance according to claim 1
Method, it is characterised in that step（2）In, the addition of the lower boiling alcohols solvent is the amount of metal nanometer line dispersion liquid
10%~20%。
8. a kind of side of solvent evaporation annealing enhancing metal nanometer line transparent conductive film performance according to claim 1
Method, it is characterised in that step（2）In, the solvent evaporation in-situ annealing processing is to add after lower boiling alcohols solvent
Closed container is placed in room temperature environment and placed 1 ~ 3 hour.
9. a kind of side of solvent evaporation annealing enhancing metal nanometer line transparent conductive film performance according to claim 1
Method, it is characterised in that step（3）In, the heating is to heat 10 ~ 30min at 70 ~ 100 DEG C.
10. a kind of side of solvent evaporation annealing enhancing metal nanometer line transparent conductive film performance according to claim 1
Method, it is characterised in that the metal nanometer line transparent conductive film finally given, it is saturating compared to undressed original metal nano wire
Bright conductive film, square resistance reduces 8% ~ 50%.
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Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN111847898A (en) * | 2020-07-28 | 2020-10-30 | 虞晖 | High-infrared-reflection coated glass and preparation process thereof |
| CN113801351A (en) * | 2021-11-08 | 2021-12-17 | 杭州师范大学 | Simple process for preparing high-transparency flexible electromagnetic shielding film |
| CN114843035A (en) * | 2022-05-23 | 2022-08-02 | 中国人民解放军国防科技大学 | Curved surface crack template preparation method based on reverse pulling method and metal grid conductive film preparation method |
| CN115995311A (en) * | 2023-03-21 | 2023-04-21 | 浙江大华技术股份有限公司 | Silver nanowire transparent conductive film and preparation method and application thereof |
Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104616837A (en) * | 2015-02-02 | 2015-05-13 | 华南师范大学 | Plane ordered metal nanowire superposed transparent conducting thin film and preparation method thereof |
| CN105261705A (en) * | 2015-11-17 | 2016-01-20 | 武汉理工大学 | Preparation method of organic solar cell |
| CN105788756A (en) * | 2016-01-08 | 2016-07-20 | 浙江大学 | Transparent metal conducting film and preparation method thereof |
| JP6053246B1 (en) * | 2015-07-30 | 2016-12-27 | バンドー化学株式会社 | Electrode manufacturing method |
-
2017
- 2017-05-16 CN CN201710345105.4A patent/CN107256741B/en active Active
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104616837A (en) * | 2015-02-02 | 2015-05-13 | 华南师范大学 | Plane ordered metal nanowire superposed transparent conducting thin film and preparation method thereof |
| JP6053246B1 (en) * | 2015-07-30 | 2016-12-27 | バンドー化学株式会社 | Electrode manufacturing method |
| CN105261705A (en) * | 2015-11-17 | 2016-01-20 | 武汉理工大学 | Preparation method of organic solar cell |
| CN105788756A (en) * | 2016-01-08 | 2016-07-20 | 浙江大学 | Transparent metal conducting film and preparation method thereof |
Cited By (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN111847898A (en) * | 2020-07-28 | 2020-10-30 | 虞晖 | High-infrared-reflection coated glass and preparation process thereof |
| CN111847898B (en) * | 2020-07-28 | 2021-09-28 | 乐清市川嘉电气科技有限公司 | High-infrared-reflection coated glass and preparation process thereof |
| CN113801351A (en) * | 2021-11-08 | 2021-12-17 | 杭州师范大学 | Simple process for preparing high-transparency flexible electromagnetic shielding film |
| CN114843035A (en) * | 2022-05-23 | 2022-08-02 | 中国人民解放军国防科技大学 | Curved surface crack template preparation method based on reverse pulling method and metal grid conductive film preparation method |
| CN114843035B (en) * | 2022-05-23 | 2024-06-21 | 中国人民解放军国防科技大学 | Curved surface crack template preparation method based on reverse pulling method and metal grid conductive film preparation method |
| CN115995311A (en) * | 2023-03-21 | 2023-04-21 | 浙江大华技术股份有限公司 | Silver nanowire transparent conductive film and preparation method and application thereof |
| CN115995311B (en) * | 2023-03-21 | 2023-05-23 | 浙江大华技术股份有限公司 | Silver nanowire transparent conductive film and preparation method and application thereof |
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