CN107248606B - The restructural power splitter of high partition ratio - Google Patents
The restructural power splitter of high partition ratio Download PDFInfo
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- CN107248606B CN107248606B CN201710574178.0A CN201710574178A CN107248606B CN 107248606 B CN107248606 B CN 107248606B CN 201710574178 A CN201710574178 A CN 201710574178A CN 107248606 B CN107248606 B CN 107248606B
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01P—WAVEGUIDES; RESONATORS, LINES, OR OTHER DEVICES OF THE WAVEGUIDE TYPE
- H01P5/00—Coupling devices of the waveguide type
- H01P5/04—Coupling devices of the waveguide type with variable factor of coupling
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Abstract
The invention discloses a kind of restructural power splitters of high partition ratio, including metal ground plate and medium substrate, the medium substrate is arranged on metal ground plate, further includes 3dB Wilkinson power splitter, 3dB branch line coupler, the first π type equivalent transmission line and the 2nd π type equivalent transmission line being separately positioned on medium substrate；The 3dB Wilkinson power splitter is connect with the first π type equivalent transmission line, the 2nd π type equivalent transmission line respectively, and the first π type equivalent transmission line, the 2nd π type equivalent transmission line are connect with 3dB branch line coupler respectively.The present invention can be realized output power high partition ratio, and distribution ratio is a wide range of interior continuous restructural.
Description
Technical field
The invention belongs to radio frequencies and technical field of micro communication, and in particular to a kind of restructural power splitter of high partition ratio.It is main
To be applied to aerial array, frequency mixer and realtime power distribution and synthesis.
Background technique
As the important component of radio circuit front end, the research and design of power divider are just increasingly by people
Attention.Power divider is referred to as power splitter, in large scale array antenna system and phased array radar system and power
In synthesizer, the power splitter different using multiple power sharing ratios is required.And since the working principle of RF Power Splitter is determined
The larger disadvantage of its volume is determined, the application meeting of multiple RF Power Splitters is further such that radio-frequency front-end is bulky, and produces
Increased costs.And the restructural power splitter of power-division ratios can replace multiple devices with a device, so it can reduce cost,
Performance and integrated level are improved, the equipment size of communication system is minimized.
Currently, the research about the restructural power splitter of distribution ratio is primarily with regard to the discrete restructural of power-division ratios.No
But structure is complicated, and allocation proportion is discrete, using limited.And continuously restructural power splitter adjustable extent is low for distribution ratio, it is practical
Property is low.Simultaneously because the variation that conventional microstrip line power splitter is all based on characteristic impedance can cause output power distribution ratio to change
Principle designs power splitter.But since high impedance microstrip line is difficult to realize in technique, so the manufacture of high partition ratio power splitter is tired
Hardly possible, cost are excessively high.
Summary of the invention
The purpose of the present invention is to propose to a kind of restructural power splitters of high partition ratio, are able to achieve the high partition ratio of power and divide
It is a wide range of interior continuously adjustable with ratio.
The restructural power splitter of high partition ratio of the present invention, including metal ground plate and medium substrate, the medium base
Plate is arranged on metal ground plate, further includes the 3dB Wilkinson power splitter being separately positioned on medium substrate, 3dB branch
Line coupler, the first π type equivalent transmission line and the 2nd π type equivalent transmission line；
The 3dB Wilkinson power splitter is connect with the first π type equivalent transmission line, the 2nd π type equivalent transmission line respectively,
First π type equivalent transmission line, the 2nd π type equivalent transmission line are connect with 3dB branch line coupler respectively；
The 3dB Wilkinson power splitter includes the first microstrip line, the second microstrip line, third microstrip line and isolation resistance
R, the both ends of isolation resistance R are connect with the right end of the right end of the second microstrip line and third microstrip line respectively, a left side for the second microstrip line
End and the left end of third microstrip line are connect with the right end of the first microstrip line, and the left end of the first microstrip line is as radiofrequency signal
Input terminal；
The 3dB branch line coupler includes the 4th microstrip line, the 5th microstrip line, the 6th microstrip line, the 7th microstrip line, the
Eight microstrip lines and the 9th microstrip line, the both ends of the 4th microstrip line left end with the left end of the 5th microstrip line, the 6th microstrip line respectively
Connection, the both ends of the 7th microstrip line are connect with the right end of the right end of the 5th microstrip line, the 6th microstrip line respectively, the 5th microstrip line
Right end is also connect with the left end of the 8th microstrip line, and the right end of the 6th microstrip line is also connect with the left end of the 9th microstrip line, and the 8th is micro-
Output end of the right end of right end with line and the 9th microstrip line respectively as radiofrequency signal.
The first π type equivalent transmission line includes the tenth microstrip line, isolation capacitance C3, isolation capacitance C4, varactor
D3 and varactor D4；The left end of tenth microstrip line is grounded after isolation capacitance C3, varactor D3, the tenth micro-strip
The left end of line is also connect with the right end of the second microstrip line；The right end of tenth microstrip line is after isolation capacitance C4, varactor D4
Ground connection, the right end of the tenth microstrip line are also connect with the left end of the 5th microstrip line；
The 2nd π type equivalent transmission line includes the 11st microstrip line, isolation capacitance C1, isolation capacitance C2, two pole of transfiguration
Pipe D1 and varactor D2；The left end of 11st microstrip line is grounded after isolation capacitance C1, varactor D1, and the 11st is micro-
Left end with line is also connect with the right end of third microstrip line, and the right end of the 11st microstrip line is through isolation capacitance C2, varactor
It is grounded after D2, the right end of the 11st microstrip line is also connect with the left end of the 6th microstrip line.
Apply reversed direct current biasing electricity respectively at the both ends of the varactor D3 and the both ends of varactor D4
Press V2；
Apply reversed direct current biasing electricity respectively at the both ends of the varactor D1 and the both ends of varactor D2
Press V1；
And V2=Vmax-V1；
When wherein Vmax is that varactor D1, varactor D2, varactor D3 and varactor D4 work
Maximum reverse bias voltage；The adjustable model of power-division ratios that this set realizes the restructural power splitter of the high partition ratio
It encloses bigger.
The characteristic impedance of first microstrip line, the 8th microstrip line and the 9th microstrip line is Z0, and physical length is λ/4；
The characteristic impedance of 4th microstrip line, the 7th microstrip line is Z0, and physical length, which can appoint, to be taken；
The characteristic impedance of second microstrip line, third microstrip line isPhysical length is λ/4；Described 5th is micro-
Characteristic impedance with line, the 6th microstrip line isPhysical length is λ/4；Tenth microstrip line, the 11st microstrip line
Characteristic impedance isPhysical length λ/12；The isolation resistance R=2*Z0.This set makes the high partition ratio can
Each port reflection coefficient for reconstructing power splitter is smaller, and the isolation between output port is larger, meets the working index of power splitter.
The invention has the following advantages that
(1) present invention has the advantages that high partition ratio, isolation are high, return loss is low and is easily achieved, and solves tradition
The shortcomings that being difficult to realize high partition ratio of power splitter.
(2) present invention is by adjusting the π type etc. being connected between 3dB Wilkinson power splitter and 3dB branch line coupler
The electrical length of transmission line is imitated, it can be achieved that output power distribution ratio is a wide range of interior continuously adjustable, solves traditional reconfigurable power splitter
Allocation proportion is not high and disadvantage that adjustable extent is low.
(3) present invention realizes that allocation proportion is adjustable by adjusting the equivalent electrical length of transmission line, solves traditional reconfigurable
Power splitter is difficult to realize the disadvantage that distribution ratio is continuously adjusted on a large scale by adjusting transmission line characteristic impedance.
(4) microstrip line construction, medium substrate, the metal ground plate etc. in the present invention can use common printed circuit
The production of plate technique, has the advantages that be easily integrated, is easy to process and low in cost.
Detailed description of the invention
Fig. 1 is entire block diagram of the invention；
Fig. 2 is the structure chart of high partition ratio power splitter in the present invention；
Fig. 3 is the S parameter of high partition ratio power splitter in the present invention；
Fig. 4 is the structure chart of the restructural power splitter of high partition ratio in the present invention；
Fig. 5 is π type equivalent transmission line schematic diagram in the present invention；
Fig. 6 is the characteristic impedance variation of π type equivalent transmission line in the present invention；
Fig. 7 is the electrical length variation of π type equivalent transmission line in the present invention；
Fig. 8 is the characteristic curve of varactor in the present invention；
Fig. 9 is the S parameter of the restructural power splitter of high partition ratio in the present invention；
In figure: 1,3dB Wilkinson power splitter, 2,3dB branch line coupler, the 3, the first π type equivalent transmission line, 4,
Two π type equivalent transmission lines, 5, metal ground plate, 6, medium substrate, the 11, first microstrip line, the 12, second microstrip line, 13, third it is micro-
Band line, the 21, the 4th microstrip line, the 22, the 5th microstrip line, the 23, the 6th microstrip line, the 24, the 7th microstrip line, the 25, the 8th microstrip line,
26, the 9th microstrip line, the 31, the tenth microstrip line, the 41, the 11st microstrip line.
Specific embodiment
The present invention will be further explained below with reference to the attached drawings.
The restructural power splitter of high partition ratio as shown in Figure 1 and Figure 4, including 3dB Wilkinson power splitter 1,3dB branch line
Coupler 2, the first π type equivalent transmission line 3, the 2nd π type equivalent transmission line 4, metal ground plate 5 and medium substrate 6.The medium
The model Arlon AD430 of substrate 6, dielectric constant 4.3, substrate thickness 0.8mm, loss tangent 0.003；Institute
State metal ground plate 5 with a thickness of 0.1mm.
As shown in Figure 1 and Figure 4,3dB Wilkinson power splitter 1,3dB branch line coupler 2, the first π type effective transmission
Line 3 and the 2nd π type equivalent transmission line 4 are separately positioned on medium substrate 6；Medium substrate 6 is arranged on metal ground plate 5.Institute
It states 3dB Wilkinson power splitter 1 to connect with the first π type equivalent transmission line 3, the 2nd π type equivalent transmission line 4 respectively, the first π type
Equivalent transmission line 3, the 2nd π type equivalent transmission line 4 are connect with 3dB branch line coupler 2 respectively.
As shown in Figure 1 and Figure 4, the 3dB Wilkinson power splitter 1 include the first microstrip line 11, the second microstrip line 12,
Third microstrip line 13 and isolation resistance R, the both ends of isolation resistance R respectively with the right end and third microstrip line 13 of the second microstrip line 12
Right end connection, the left end of the left end of the second microstrip line 12 and third microstrip line 13 connects with the right end of the first microstrip line 11
It connects, input terminal of the left end of the first microstrip line 11 as radiofrequency signal.
As shown in Figure 1 and Figure 4, the 3dB branch line coupler 2 includes the 4th microstrip line 21, the 5th microstrip line the 22, the 6th
Microstrip line 23, the 7th microstrip line 24, the 8th microstrip line 25 and the 9th microstrip line 26, the both ends of the 4th microstrip line 21 are respectively with the 5th
The left end of microstrip line 22, the 6th microstrip line 23 left end connection, the both ends of the 7th microstrip line 24 respectively with the 5th microstrip line 22
The right end connection of right end, the 6th microstrip line 23, the right end of the 5th microstrip line 22 are also connect with the left end of the 8th microstrip line 25, and the 6th
The right end of microstrip line 23 is also connect with the left end of the 9th microstrip line 26, the right end of the 8th microstrip line 25 and the right side of the 9th microstrip line 26
Hold the output end respectively as radiofrequency signal.
As shown in Figure 1 and Figure 4, the first π type equivalent transmission line 3 includes the tenth microstrip line 31, isolation capacitance C3, isolation
Capacitor C4, varactor D3 and varactor D4；The left end of tenth microstrip line 31 is through isolation capacitance C3, two pole of transfiguration
It is grounded after pipe D3, the left end of the tenth microstrip line 31 is also connect with the right end of the second microstrip line 12；The right end of tenth microstrip line 31 passes through
It is grounded after isolation capacitance C4, varactor D4, the right end of the tenth microstrip line 31 is also connect with the left end of the 5th microstrip line 22；Every
Effect from capacitor C3 and isolation capacitance C4 is to prevent DC voltage source V1 from having an impact to the radiofrequency signal of power splitter.
As shown in Figure 1 and Figure 4, the 2nd π type equivalent transmission line 4 include the 11st microstrip line 41, isolation capacitance C1, every
From capacitor C2, varactor D1 and varactor D2；The left end of 11st microstrip line 41 is through isolation capacitance C1, two pole of transfiguration
It is grounded after pipe D1, the left end of the 11st microstrip line 41 is also connect with the right end of third microstrip line 13, the right side of the 11st microstrip line 41
End is grounded after isolation capacitance C2, varactor D2, left end of the right end of the 11st microstrip line 41 also with the 6th microstrip line 23
Connection；The effect of isolation capacitance C1 and isolation capacitance C2 are to prevent DC voltage source V2 from generating shadow to the radiofrequency signal of power splitter
It rings.
As shown in Figure 1 and Figure 4, apply respectively at the both ends of the varactor D3 and the both ends of varactor D4
Reversed DC offset voltage V2；Apply respectively reversely at the both ends of the varactor D1 and the both ends of varactor D2
DC offset voltage V1；And V2=Vmax-V1；Wherein Vmax is varactor D1, varactor D2, varactor D3
With maximum reverse bias voltage when varactor D4 work.This set makes the restructural power splitter of the high partition ratio real
Existing power-division ratios adjustable extent is bigger.
The restructural power splitter of high partition ratio of the present invention, first microstrip line 11, the 8th microstrip line 25 and the 9th
The characteristic impedance of microstrip line 26 is Z0, and physical length is λ/4；The characteristic impedance of 4th microstrip line 21, the 7th microstrip line 24
For Z0, physical length, which can appoint, to be taken；The characteristic impedance of second microstrip line 12, third microstrip line 13 isPhysical length
For λ/4；The characteristic impedance of 5th microstrip line 22, the 6th microstrip line 23 isPhysical length is λ/4；Described tenth
The characteristic impedance of microstrip line 31, the 11st microstrip line 41 isPhysical length λ/12；The isolation resistance R=2*Z0.
This set makes each port reflection coefficient of the restructural power splitter of the high partition ratio smaller, the isolation between output port
It is larger, meet the working index of power splitter.
It can be realized high partition ratio to the present invention below to be described in detail, by taking working frequency f is in 2.5GHz as an example:
For convenience of explanation and understand, by the first π type equivalent transmission line 3, the 2nd π type of the restructural power splitter of high partition ratio
Equivalent transmission line 4 removes, and only retains the 11st microstrip line 41, that is, constitutes a high partition ratio power splitter, referring to fig. 2.Wherein,
The length of 11 microstrip lines 41 is L2, width 1.49mm；A left side for the first microstrip line 11 in 3dB Wilkinson power splitter 1
It holds and is used as power input P1, length 5mm, width 1.49mm, the length of the second microstrip line 12 and third microstrip line 13 is equal
For 16.8mm, the resistance value of width 0.75mm, isolation resistance R are 100 Ω.When normal work, microwave signal is from the first microstrip line
11 power input P1 input, exports from the second microstrip line 12 and third microstrip line 13, can be obtained according to odd-even mode analytical method
It arrives, the output power constant amplitude of 3dB Wilkinson power splitter exports in the same direction.
The length of the 5th microstrip line 22 and the 6th microstrip line 23 in 3dB branch line coupler 2 is 18.67mm, and width is
2.6mm；The length of 4th microstrip line 21 and the 7th microstrip line 24 is 15.7mm, width 1.49mm；8th microstrip line 25 and
The length of nine microstrip lines 26 is 5mm, width 1.49mm.As shown in Fig. 2, when inputting unit amplitude from 22 left end of the 5th microstrip line
For 1 wave when: according to odd-even mode analytical method, power B1 received by the left end of the 5th microstrip line 22, the 6th microstrip line 23
The right end institute of power B3 and the 9th microstrip line 26 received by the right end of power B2, the 8th microstrip line 25 received by left end
The power B4 received meets formula (1-1):
It and is e when 23 left end of the 6th microstrip line inputs amplitude simultaneouslyjθ(θ is that the 5th microstrip line 22 and the 6th microstrip line 23 are defeated
Enter the phase difference of signal) wave when, can be obtained according to principle of stacking, power B1, B2, B3, the B4 received meets formula (1-2)；
When the phase of the 5th microstrip line 22 and 23 input signal of the 6th microstrip line changes, 3dB branch line coupler 2
Output power ratio be P2/P3 (or B3/B4) will change.Based on the principle, as shown in Fig. 2, by 3dB Wilkinson function
The right end of the second microstrip line 12 in point device 1 connects with the left end of the 5th microstrip line 22, and the right end of third microstrip line 13 passes through the
11 microstrip lines 41 connect with the left end of the 6th microstrip line 23, so that the signal inputted from the end P1 passes through 3dB Wilkinson function
The equal scores of point device 1 are matched, and generate phase difference using the 11st microstrip line 41,3dB branch line coupler 2 is recycled to be divided again
Match, it is final to realize that output end P2, output end P3 have high partition ratio.
As shown in figure 3, being the S parameter result of high partition ratio power splitter, wherein S (1.1) is the return loss of the port P1,
The smaller the better in actual work, S (1.2) is the transmission coefficient of the port P1 to the port P2, and S (1.3) is the port P1 to the port P3
Transmission coefficient, S (2.3) is the isolation of the port P2 to the port P3, the smaller the better in actual work.As shown in figure 3, with the tenth
The length L2 of one microstrip line 41 changes, and S (1.1) and S (2.3) are superior to 40dB, meet work requirements.High partition ratio power splitter
Output power distribution ratio K=P3/P2=S (1.3)-S (1.2), as L2 increases to 20mm by 0, distribution ratio K is changed to by 0dB-
40dB (about 1:1~1:10000) realizes high partition ratio design, the maximum allocated that can be realized much larger than existing power splitter
Than.
A wide range of interior be continuously adjusted of the achievable output power distribution ratio of the present invention is described in detail below:
As shown in figure 4, in order to which the distribution ratio for realizing high partition ratio power splitter is real-time continuous restructural (i.e. adjustable), in 3dB
Two π type equivalent transmission lines, i.e., height of the present invention are accessed between Wilkinson power splitter 1 and 3dB branch line coupler 2
The restructural power splitter of distribution ratio, the input signal phase difference that it can be realized 3dB branch line coupler 2 is adjustable, so that final whole
The output power distribution ratio of a power splitter is restructural.The ginseng of the 3dB Wilkinson power splitter 1 and 3dB branch line coupler 2
Number is identical as the parameter in Fig. 2；Bending has been carried out to the second microstrip line 12 and third microstrip line 13 so that the size of power splitter more
It is small, on device function without influence.
As shown in figure 5, generating the schematic diagram of phase difference for π type equivalent transmission line, 5 (a) be a normal transmission line, Fig. 5
(b) it is π type equivalent transmission line, is made of a short transmission line and two capacitors in parallel.According to parity mode correlation theory, can obtain
To the transfer matrix of normal transmission line:
Wherein: Y, Z and θ are the admittance, impedance and electrical length (phase) of transmission line respectively.
According to parity mode correlation theory, the transfer matrix of π type equivalent transmission line can be obtained:
Wherein: Y0、Z0And θ0It is admittance, impedance and the electrical length of microstrip line in π type equivalent transmission line respectively, C is can power transformation
The capacitance of appearance, YCFor the admittance of variable capacitance；
It enables formula (1-3) and formula (1-4) equal, can obtain:
Wherein: f is working frequency.
As long as in conclusion select suitable variable capacitance, in pi-network transmission line characteristic impedance and electrical length,
Specific transmission line can be substituted.Change the capacitance of variable capacitance, so that it may change the characteristic impedance of π type equivalent transmission line
And electrical length.Distribution ratio in order to realize restructural power splitter after equivalent substitution is as high as possible, and distribution ratio adjustable extent is as far as possible
Greatly.The variable capacitance that must obtain OK range makes the characteristic impedance of π type equivalent transmission line most relative to unit impedance (50 Ω)
May be small, and electrical length is as big as possible.Selection working frequency f is 2.5GHz, and the length of microstrip line is in π type equivalent transmission line
6mm when width is 0.5mm, carries out S parameter scanning emulation to variable capacitance C, obtain as Fig. 6 and Fig. 7's as a result, according to Fig. 6 and
When Fig. 7 can be seen that capacitance is between 0pF~3pF, electrical length is changed greatly and characteristic impedance is smaller, suitable for of the invention
Power-division ratios are adjusted.
The present invention, as variable capacitance, can pass through the direct current reverse bias electricity of adjusting varactor using varactor
Pressure is to change the capacitance of varactor, to realize the characteristic impedance of π type equivalent transmission line and the change of electrical length.Fig. 4
In varactor D1, varactor D2, varactor D3 and varactor D4 model be SMV2020,
The variation of the capacitance of varactor is as shown in Figure 8 under direct current reverse bias voltage；Direct current reverse bias voltage V1 0V~
When being adjusted between 20V, capacitance C can be obtained and change between 0.286pF~3.315pF, can be used as the varactor in the present invention.
Isolation capacitance value C1, isolation capacitance value C2, isolation capacitance value C3 and isolation capacitance value C4 are 8pF.V1 is adjusted between 0~20V
When, maximum voltage Vmax=20V, so V2=20-V1.
Fig. 9 is the S parameter of the restructural power splitter of high partition ratio in Fig. 4 as a result, when changing between 0~20V with V1, high score
Matching the output power distribution ratio of restructural power splitter consecutive variations, the high partition ratio between -15.5dB~15.5dB can weigh
The return loss S (1.1) and isolation S (2.3) of structure power splitter are superior to 25dB.
In summary performance indicator can be seen that the present invention realize power splitter output power high partition ratio 0dB~-
40dB, the reachable -40dB of maximum allocated ratio and distribution ratio are continuously adjusted on a large scale in -15.5dB~15.5dB.
Above description is only example of the present invention, does not constitute any limitation of the invention.Obviously for this
It, all may be without departing substantially from the principle of the invention, structure after having understood the content of present invention and principle for the professional in field
In the case of, various modifications and variations in form and details are carried out, but these modifications and variations based on inventive concept are still
Within the scope of the claims of the present invention.
Claims (2)
1. a kind of restructural power splitter of high partition ratio, including metal ground plate (5) and medium substrate (6), the medium substrate (6)
It is arranged on metal ground plate (5), it is characterised in that: further include the 3dB Wilkinson being separately positioned on medium substrate (6)
Power splitter (1), 3dB branch line coupler (2), the first π type equivalent transmission line (3) and the 2nd π type equivalent transmission line (4)；
The 3dB Wilkinson power splitter (1) respectively with the first π type equivalent transmission line (3), the 2nd π type equivalent transmission line (4)
Connection, the first π type equivalent transmission line (3), the 2nd π type equivalent transmission line (4) are connect with 3dB branch line coupler (2) respectively；
The 3dB Wilkinson power splitter (1) includes the first microstrip line (11), the second microstrip line (12), third microstrip line
(13) and isolation resistance R, the both ends of the isolation resistance R right side with the right end of the second microstrip line (12) and third microstrip line (13) respectively
End connection, the left end of the second microstrip line (12) and the left end of third microstrip line (13) connect with the right end of the first microstrip line (11)
It connects, input terminal of the left end of the first microstrip line (11) as radiofrequency signal；
The 3dB branch line coupler (2) includes the 4th microstrip line (21), the 5th microstrip line (22), the 6th microstrip line (23), the
Seven microstrip lines (24), the 8th microstrip line (25) and the 9th microstrip line (26), the both ends of the 4th microstrip line (21) are micro- with the 5th respectively
Left end with line (22), the 6th microstrip line (23) left end connection, the both ends of the 7th microstrip line (24) respectively with the 5th microstrip line
(22) the right end connection of right end, the 6th microstrip line (23), the right end of the 5th microstrip line (22) also with the 8th microstrip line (25)
Left end connection, the right end of the 6th microstrip line (23) are also connect with the left end of the 9th microstrip line (26), the right side of the 8th microstrip line (25)
Output end of the right end of end and the 9th microstrip line (26) respectively as radiofrequency signal；
The first π type equivalent transmission line (3) includes the tenth microstrip line (31), isolation capacitance C3, isolation capacitance C4, two pole of transfiguration
Pipe D3 and varactor D4；The left end of tenth microstrip line (31) is grounded after isolation capacitance C3, varactor D3, the
The left end of ten microstrip lines (31) is also connect with the right end of the second microstrip line (12)；The right end of tenth microstrip line (31) is through isolation capacitance
It is grounded after C4, varactor D4, the right end of the tenth microstrip line (31) is also connect with the left end of the 5th microstrip line (22)；
The 2nd π type equivalent transmission line (4) includes the 11st microstrip line (41), isolation capacitance C1, isolation capacitance C2, transfiguration two
Pole pipe D1 and varactor D2；The left end of 11st microstrip line (41) is grounded after isolation capacitance C1, varactor D1, the
The left end of 11 microstrip lines (41) is also connect with the right end of third microstrip line (13), and the right end of the 11st microstrip line (41) is through being isolated
It is grounded after capacitor C2, varactor D2, the right end of the 11st microstrip line (41) is also connect with the left end of the 6th microstrip line (23)；
Apply reversed DC offset voltage V2 respectively at the both ends of the varactor D3 and the both ends of varactor D4；
Apply reversed DC offset voltage V1 respectively at the both ends of the varactor D1 and the both ends of varactor D2；
And V2=Vmax-V1；
Wherein: when Vmax is varactor D1, varactor D2, varactor D3 and varactor D4 work most
Big reverse bias voltage.
2. the restructural power splitter of high partition ratio according to claim 1, it is characterised in that: first microstrip line (11),
The characteristic impedance of 8th microstrip line (25) and the 9th microstrip line (26) is Z0, and physical length is λ/4；
The characteristic impedance of second microstrip line (12), third microstrip line (13) isPhysical length is λ/4；Described
The characteristic impedance of five microstrip lines (22), the 6th microstrip line (23) isPhysical length is λ/4；Tenth microstrip line
(31), the characteristic impedance of the 11st microstrip line (41) isPhysical length λ/12；The isolation resistance R=2*Z0.
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| CN111261990B (en) * | 2020-01-16 | 2021-12-10 | 东方红卫星移动通信有限公司 | Complementary reconfigurable power divider based on reflection-type phase shifter |
| CN114335952B (en) * | 2021-12-29 | 2023-03-24 | 重庆两江卫星移动通信有限公司 | Filtering power divider with reconfigurable phase difference and distribution ratio and antenna system |
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