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CN107230647A - Crystal grain detection method - Google Patents

Crystal grain detection method Download PDF

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Publication number
CN107230647A
CN107230647A CN201610171862.XA CN201610171862A CN107230647A CN 107230647 A CN107230647 A CN 107230647A CN 201610171862 A CN201610171862 A CN 201610171862A CN 107230647 A CN107230647 A CN 107230647A
Authority
CN
China
Prior art keywords
crystal grain
detection method
light
transmissive film
wafer
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
CN201610171862.XA
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Chinese (zh)
Inventor
郑竹岚
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Individual
Original Assignee
Individual
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Individual filed Critical Individual
Priority to CN201610171862.XA priority Critical patent/CN107230647A/en
Publication of CN107230647A publication Critical patent/CN107230647A/en
Pending legal-status Critical Current

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Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L22/00Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
    • H01L22/30Structural arrangements specially adapted for testing or measuring during manufacture or treatment, or specially adapted for reliability measurements

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  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Testing Or Measuring Of Semiconductors Or The Like (AREA)
  • Investigating Materials By The Use Of Optical Means Adapted For Particular Applications (AREA)

Abstract

The present invention provides a kind of crystal grain detection method, and it is comprised the steps of:Wafer with several crystal grain is sticked on the loading end of carrier;The soft transparent sticker of solid-state is invested on attaching face, to form light-transmissive film;Carrier is alignd with microscope;The detection image of target crystal grain is captured by microscope;Detection image is compared with acquiescence image;When detecting that image does not meet acquiescence image, judge target crystal grain for flaw crystal grain.

Description

Crystal grain detection method
Technical field
The present invention relates to a kind of crystal grain detection method, the soft transparent sticker of solid-state is invested into carrying before more particularly to a kind of detection The attaching face of disk is to form the crystal grain detection method of light-transmissive film.
Background technology
In existing integrated circuit manufacture process, before wafer cutting is carried out, wafer can be first positioned on atomization dicing tape, with Avoid the situation for causing crystal grain to disperse during cutting crystal wafer.
However, the general surface using atomization dicing tape can have rough situation, cause scattering and can not clearly into Picture, and then lead to not burst apart to the inside caused by the integrated circuit layout or cutting process on wafer in each crystal grain and examine Survey.
Therefore, if crystal grain defective enters back-end process, follow-up waste of material will be caused, and influence the good of finished product Rate.And then, if Defect Detection can not be carried out in advance, it just can not effectively lift process rate and reduction processing procedure cost.
The content of the invention
In view of it is above-mentioned know the problem of, it is an object of the invention to provide a kind of crystal grain detection method, to solve existing skill Problem encountered in art.
Based on above-mentioned purpose, the present invention provides a kind of crystal grain detection method, and it is comprised the steps of:There to be several crystal grain Wafer stick on the loading end of carrier;On the attaching face that the soft transparent sticker of solid-state is invested to the relative loading end of carrier, To form the light-transmissive film of the detection zone covered in attaching face;Carrier is alignd with microscope, captured by microscope some The detection image of target crystal grain in individual crystal grain;Detection image is compared with acquiescence image;When detection image do not meet it is silent When recognizing image, then judge target crystal grain for flaw crystal grain.
Embodiments in accordance with the present invention, the following steps are can further include before wafer is sticked in into attaching face:Glued membrane is pasted In the hollow region of load-carrying ring, to form carrier.
Embodiments in accordance with the present invention, light-transmissive film can be formed at glued membrane with respect in the one side of wafer.
Embodiments in accordance with the present invention, glued membrane can be blue film (blue tape) or ultraviolet tape (UV tape).
Embodiments in accordance with the present invention, detect and can further include the following steps after several crystal grain:Remove light-transmissive film.
Embodiments in accordance with the present invention, the shape of light-transmissive film can correspond to the shape of detection zone.
Embodiments in accordance with the present invention, the out-of-flatness details that light-transmissive film can be covered and filled and led up on attaching face.
Embodiments in accordance with the present invention, detection zone can covering wafer border and its border in Zone Full.
Embodiments in accordance with the present invention, the material of the soft transparent adhesive tape of solid-state can be soft rubber.
Embodiments in accordance with the present invention, the light transmittance of light-transmissive film can be more than 87%.
In summary, crystal grain detection method of the invention can be by the setting of light-transmissive film so that before wafer cutting is completed, Just the crystal grain on wafer can be clearly observed using microscope whether with the presence of flaw, and then avoids wasting routing material, envelope Thus package material, routing time, packaging time or testing time can effectively lift integrated circuit on crystal grain defective Process efficiency and cost is greatly reduced;In addition, by the way that the soft transparent sticker of solid-state is attached on glued membrane, therefore can after having detected Reuse is removed, and with the characteristic of environmental protection, and because using mould surface smoothness is also than more consistent.
Brief description of the drawings
Fig. 1 is the flow chart of the crystal grain detection method according to one embodiment of the invention.
Fig. 2 is the flow chart of the crystal grain detection method according to another embodiment of the present invention.
Fig. 3 is wafer, glued membrane, load-carrying ring, light-transmissive film and microscopical cloth in the crystal grain detection method according to the embodiment of the present invention Put relation schematic diagram.
Symbol description:
31:Load-carrying ring
32:Light-transmissive film
33:Glued membrane
34:Wafer
35:Microscope
S10 to S17:Step
Embodiment
Effect that for the benefit of your auditor understands feature, content and the advantage of the present invention and its can reached, The present invention is hereby coordinated into accompanying drawing, and it is as follows with the expression-form detailed description of embodiment, and used in it Accompanying drawing, its purport be only signal and aid in illustrating book is used, may not for the present invention implement after true ratio Example and precisely configuration, therefore not that should not be understood with regard to the ratio of accompanying drawing with configuration relation, limit the invention to actual reality The interest field applied.
Advantages of the present invention, feature and the technical method reached will enter with reference to exemplary embodiments and accompanying drawing Row is more fully described and is easier to understand, and the present invention or can realize in different forms, therefore should not be by Understanding is only limitted to embodiments set forth herein, on the contrary, for skilled artisan, The embodiment provided will make this exposure more thoroughly with comprehensively and intactly passing on scope of the invention, and The present invention will only be that attached claims are defined.
Referring to Fig. 1, it is the flow chart of the crystal grain detection method according to one embodiment of the invention.As schemed Shown in 1, crystal grain detection method of the invention is comprised the steps of:
In step s 11:Wafer with several crystal grain is sticked on the loading end of carrier.
In step s 12:On the attaching face that the soft transparent sticker of solid-state is invested to the relative loading end of carrier, To form the light-transmissive film of the detection zone covered in attaching face.
In step s 13:Carrier is alignd with microscope.
In step S14:The detection image of the target crystal grain in several crystal grain is captured by microscope.
In step S15:Detection image is compared with acquiescence image.
In step s 16:When detecting that image does not meet acquiescence image, then judge that target crystal grain is brilliant for flaw Grain.
Again referring to Fig. 2, it is the flow chart of the crystal grain detection method according to another embodiment of the present invention. As shown in Fig. 2 the crystal grain detection method of the present invention is before wafer is sticked on loading end, can be further Comprise the steps of:
In step slo:Glued membrane is sticked in the hollow region of load-carrying ring, to form carrier.
And subsequently perform above-mentioned steps S11 to S15 repeatedly and detected on wafer after all target crystal grain, also It can further include the following steps:
In step S17:Remove light-transmissive film.
Referring to Fig. 3, it is wafer, glued membrane, load-carrying ring, light-transmissive film in crystal grain detection method of the invention With microscopical arrangement relation schematic diagram.As shown in figure 3, because the center of load-carrying ring 31 has hollow region, And in order that load-carrying ring 31 can carry wafer 34, and in view of preventing crystal grain when cutting of wafer 34 from dispersing, Therefore set in hollow region and paste glued membrane 33, carrier is on the one hand formed to carry wafer 34, on the other hand Wafer 34 can be then sticked to carry out subsequent job.Wherein, light-transmissive film 32 is formed at glued membrane 33 with respect to wafer 34 One side on, and glued membrane 33 can be then blue film (blue tape) or ultraviolet tape (UV tape), and it is visually needed Condition of pleading and adjusted, do not limited herein.
Furthermore, it is contemplated that the another side of the loading end of the relative carrying wafer 34 of glued membrane 33 has rough Situation is produced, when capturing the detection image of target crystal grain by microscope 35, probably because of rough table Face and cause scattering, therefore blur-free imaging can not be obtained;Therefore, the soft transparent adhesive tape of solid-state is attached in the face of attaching To be formed after light-transmissive film 32, the out-of-flatness details that light-transmissive film 32 just can be covered and filled and led up on attaching face, so that The detection image that microscope 35 is captured can blur-free imaging, to lift detection precision and QC efficiency.
And, picked because 35 pairs of microscope is covered by the wafer 34 comprising several crystal grain in detection zone The operation of Image detection is taken, therefore based on the consideration of lifting detection precision, the shape of light-transmissive film 32 should be corresponded to The shape of detection zone, and form the position of light-transmissive film 32 and should correspond to and cover the wafer 34 to be detected, and Detection zone is the corresponding Zone Full covered in the border and its border of wafer 34.
Supplement one is mentioned that the material of the soft transparent adhesive tape of above-mentioned solid-state can be soft rubber;And light-transmissive film 32 light transmittance can be more than 87%, and light-transmissive film 32 can be formed on attaching face by mould.
In summary, crystal grain detection method of the invention has following advantages:
1. the setting for passing through light-transmissive film so that before wafer cutting is completed, just can be clear using microscope Whether ground observes crystal grain on wafer with the presence of flaw, and then avoids wasting routing material, encapsulating material, Routing time, packaging time or testing time are on crystal grain defective.
2. by the setting of light-transmissive film, it can effectively lift the process efficiency of integrated circuit and cost is greatly reduced.
3. by printing opacity membrane system is to be attached on glued membrane to be formed with the soft transparent sticker of solid-state, therefore after having detected Reuse can be removed, and with the characteristic of environmental protection, and because using mould surface smoothness also compares It is more consistent.
Embodiment described above is only technological thought and feature to illustrate the invention, and its purpose makes this Art personnel can understand present disclosure and implement according to this, when can not with restriction the present invention Claim, i.e., the equivalent change made generally according to disclosed spirit or modification, should cover In the claim of the present invention.

Claims (10)

1. a kind of crystal grain detection method, it is characterised in that comprise the steps of:
Wafer with several crystal grain is sticked on the loading end of carrier;
On the attaching face that the soft transparent sticker of solid-state is invested to the relatively described loading end of the carrier, with shape Into the light-transmissive film for covering the detection zone in the attaching face;
The carrier is alignd with microscope;
The detection image of the target crystal grain in several described crystal grain is captured by the microscope;
The detection image is compared with acquiescence image;And
When the detection image does not meet the acquiescence image, then judge that the target crystal grain is brilliant for flaw Grain.
2. crystal grain detection method according to claim 1, it is characterised in that paste the wafer Comprised the steps of in taking a step forward for the loading end:
Glued membrane is sticked in the hollow region of load-carrying ring, to form the carrier.
3. crystal grain detection method according to claim 2, it is characterised in that the light-transmissive film is formed In in the one side of the relatively described wafer of the glued membrane.
4. crystal grain detection method according to claim 2, it is characterised in that the glued membrane is blue film Or ultraviolet tape.
5. crystal grain detection method according to claim 1, it is characterised in that detection it is described several Further comprised the steps of after crystal grain:
Remove the light-transmissive film.
6. crystal grain detection method according to claim 1, it is characterised in that the shape of the light-transmissive film The shape of the shape correspondence detection zone.
7. crystal grain detection method according to claim 1, it is characterised in that the light-transmissive film covering And the out-of-flatness details filled and led up on the attaching face.
8. crystal grain detection method according to claim 1, it is characterised in that the detection zone is contained The Zone Full covered in the border and its border of the wafer.
9. crystal grain detection method according to claim 1, it is characterised in that the solid-state is soft The material of gelatin is soft rubber.
10. crystal grain detection method according to claim 1, it is characterised in that the light-transmissive film Light transmittance is more than 87%.
CN201610171862.XA 2016-03-24 2016-03-24 Crystal grain detection method Pending CN107230647A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
CN201610171862.XA CN107230647A (en) 2016-03-24 2016-03-24 Crystal grain detection method

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
CN201610171862.XA CN107230647A (en) 2016-03-24 2016-03-24 Crystal grain detection method

Publications (1)

Publication Number Publication Date
CN107230647A true CN107230647A (en) 2017-10-03

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Family Applications (1)

Application Number Title Priority Date Filing Date
CN201610171862.XA Pending CN107230647A (en) 2016-03-24 2016-03-24 Crystal grain detection method

Country Status (1)

Country Link
CN (1) CN107230647A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN111122601A (en) * 2019-12-27 2020-05-08 苏州晶台光电有限公司 Method for inspecting internal appearance defects of COB module after glue sealing

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN104465430A (en) * 2013-09-18 2015-03-25 友丰贸易有限公司 Method for detecting dies on wafer
TW201512650A (en) * 2013-09-18 2015-04-01 Yeou Feng Trading Co Ltd Method for inspecting dies on wafer

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN104465430A (en) * 2013-09-18 2015-03-25 友丰贸易有限公司 Method for detecting dies on wafer
TW201512650A (en) * 2013-09-18 2015-04-01 Yeou Feng Trading Co Ltd Method for inspecting dies on wafer

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN111122601A (en) * 2019-12-27 2020-05-08 苏州晶台光电有限公司 Method for inspecting internal appearance defects of COB module after glue sealing

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Application publication date: 20171003