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CN107210281A - Power semiconductor modular with improved bonding attachment structure - Google Patents

Power semiconductor modular with improved bonding attachment structure Download PDF

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Publication number
CN107210281A
CN107210281A CN201680009758.9A CN201680009758A CN107210281A CN 107210281 A CN107210281 A CN 107210281A CN 201680009758 A CN201680009758 A CN 201680009758A CN 107210281 A CN107210281 A CN 107210281A
Authority
CN
China
Prior art keywords
power semiconductor
bonding
pin
connector
group
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
CN201680009758.9A
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Chinese (zh)
Other versions
CN107210281B (en
Inventor
R·皮尔默
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Infineon Technology Bipolar Co ltd
Original Assignee
Infineon Technologies Bipolar GmbH and Co KG
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Application filed by Infineon Technologies Bipolar GmbH and Co KG filed Critical Infineon Technologies Bipolar GmbH and Co KG
Publication of CN107210281A publication Critical patent/CN107210281A/en
Application granted granted Critical
Publication of CN107210281B publication Critical patent/CN107210281B/en
Active legal-status Critical Current
Anticipated expiration legal-status Critical

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    • H01L23/488—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
    • H01L23/49—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions wire-like arrangements or pins or rods
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  • Power Conversion In General (AREA)

Abstract

The present invention relates to a kind of power semiconductor modular (10), it has：At least one substrate (4)；At least one power semiconductor (2), it is arranged on substrate (4) and has conjunction plane (21) on its side back to substrate；Loaded level face (23) by power semiconductor (2), splitting if necessary is arranged on the substrate (4)；For the multiple bonding connectors (25,26) for being connected conjunction plane (21) with loaded level face (23) parallel conductance, wherein, each bonding connector (25,26) has at least one first bonding pin (31) on loaded level face (23) and multiple second bonding pin (32) on conjunction plane (21), and wherein, each bonding connector (25,26) has at least one end on conjunction plane (21)；Wherein, multiple bonding connectors (25, 26) it is arranged at least two groups, group is made up of the multiple bonding connectors of bonding pin quantity identical, and the second bonding pin (32) of each bonding connector in a group is arranged only in the section limited by conjunction plane (21) part face of conjunction plane (22) or region (22a or 22b), and the corresponding difference of group is, its first bonding pin (31) is arranged on loaded level face (23), and have towards power semiconductor (2) different, but it is preferred that spacing (a consistent in each group1Or a2)。

Description

Power semiconductor modular with improved bonding attachment structure
The present invention relates to a kind of power semiconductor modular.Power semiconductor modular is semiconductor assembly, and the assembly is used in work( In rate electronic circuit.Power semiconductor modular is generally used in motor vehicle and commercial Application, such as in transverter and in rectifier. Semiconductor subassembly (component is included in power semiconductor modular) is typically IGBT (insulation lock bipolar transistor) semiconductor core Piece or MOSFET (metal-oxide semiconductor (MOS)-field-effect transistor) semiconductor chip.IGBT semiconductor chips and MOSFET Semiconductor chip has the rated voltage and rated power of change.Some power semiconductor modulars are overvoltage protection also with additional Semiconductor diode (i.e. free diode) in semiconductor packages.
For higher power application, power semiconductor modular generally has one or more work(on a single substrate Rate semiconductor structure component, is also abbreviated by power semiconductor below.Substrate generally has the ceramic substrate of at least one insulation, example Such as Al2O3、AlN、Si3N4Or other suitable materials, with the power semiconductor modular that is electrically insulated.Substrate generally applies and is plated in metal On bottom plate, the bottom plate is used as being mechanically fixed and be thermally connected at radiator, stable substrate support by module.Ceramic substrate is extremely A few surface or using fine copper, fine aluminium or copper facing, aluminize or other suitable materials are come coated metal, with the one hand Connect the power semiconductor arranged and be typically welded to and on the other hand potential surface, especially loaded level face are provided.Should Potential surface on the one hand be used for via it is so-called bonding connection by electric current input or power output semiconductor, on the other hand for Connector is mechanically fixed and electrically connected, and the connector is input to module for electric current or electric current slave module is especially defeated from housing Go out so that for example the latter is for example connected outside housing with outer conductor by means of bolt.The metal level set for potential surface is usual By means of direct copper bonding technology (DCB), direct aluminium bonding technology (DAB) or active metal brazing process (AMB) even It is connected to ceramic liner bottom.
In order to electrically connect the conjunction plane of potential surface and the power semiconductor involved by least one dorsad substrate, generally set The bonding connector (also referred to as wire bonding connector) or the bonding connector of bonding band forms for putting bonding line form (are also referred to as For band bonding connector), the bonding connector produces conductive contact between potential surface and the conjunction plane of semiconductor.In power electricity It is used to be bonded connector using pure (99.99% aluminium or more at high proportion) aluminium and copper product in subdomains.On the one hand it is used to produce Raw connection between bonding connector and conjunction plane and on the other hand it is connected not being bonded between connector and potential surface Same process program is hot compression bonding (abbreviation：TC is bonded), thermosetting ball-Wedge Bond (TS- bondings) and ultrasonic wedge-Wedge Bond (US- bondings).Wherein, on the one hand between bonding connector and conjunction plane and on the other hand in bonding connector with coupling current potential The contact area produced respectively between face is referred to as bonding pin.
This power semiconductor modular and the demand for the necessary power semiconductor of its structure and life thus Production capacity power in the past few years in continuously increase.For example, the current strength of the unit area of semiconductor element rises.This Outside, due to the reason of economic necessity, semiconductor element is run close to its power limit all the time.
For the performance of power semiconductor modular or power semiconductor conclusive external factor be radiating and The input and output of electric current.Prior art in the input and output of the electric current of semiconductor element is in different designs scheme Bonding connection, for example as wire bonding connect or as band bonding connect.Partly led in the power with high current loads Used in body situation and carry thick line or thick line-band of the diameter between 100 μm to 500 μm.Its cross section is not enough to set rule Multiple parallel bonding connectors of rule.Present disclosure is the performance of this bonding connector.
For example, the wire bonding for power semiconductor structure element as known to document DE19549011A1 is connected.At this In the power semiconductor modular that document there is introduced, power semiconductor structure element is arranged on substrate by means of being welded to connect. Being welded to connect for second interarea of the power semiconductor structure element constitutes the part that electric current is inputted and exported.Other electric current connection Connect by means of providing between the coat of metal of the first interarea of power semiconductor structure element of conjunction plane and loaded level face Wire bonding connect and produce.It is typically for the connection of known wire bonding, bonding line is adjacent to each other closely to be arranged, And the bonding pin of the single bonding line especially on power semiconductor is arranged as the crow flies or with slightlyying offset.
According to prior art, power semiconductor structure element is not used to connect only by means of the single bonding line being arranged side by side Convey electric current and be frequently utilized that two or more along the least partially overlapped bonding line in bonding line direction.In order to improve CURRENT DISTRIBUTION on power semiconductor structure element, single bonding line often connects its conjunction plane also by way of multiple bonding pin.
Analog simulation is shown, key is being arranged between load connection potential surface and power semiconductor according to prior art During zygonema, electric current is unevenly transported in power semiconductor via conjunction plane and is not therefore carried in equably whole To be conducted on individual face.
Document DE10204157A1 discloses the wire bonding for conductive connection conductor rail and power semiconductor Connection, wherein, change whole bonding lines or spacing in single bonding line group and therefore relative to prior art edge Conveying electric current is equably designed perpendicular to bonding line direction of routing.
Document DE102005039940B4 discloses wire bonding connection, the second bonding of multiple bonding connections in the connection Pin chessboard trellis, which is alternately distributed on common conjunction plane and is bonded connection, forms two be made up of multiple bonding connections Group, wherein, the difference of two groups is to be bonded connecting length difference and its second bonding pin is limited on conjunction plane and do not had There are common section or common region.
The wire bonding connection design disadvantageously, here, the sufficiently large of power semiconductor must be provided Conjunction plane, can meaningfully use this complicated topology.
The power semiconductor is especially especially should be noted in the power semiconductor modular with diode and IGCT Surge current load.The surge current is among the short time of the order of magnitude of 1/10th seconds beyond power semiconductor Continuous load several times.Prove herein, the design connected not absolute advantage is bonded for continuous operating energy loss.
It is an object of the present invention to provide a kind of bonding connector for power semiconductor modular, wherein, bonding connection The maximum conductivity of part overall with it, can be improved especially in surge current load, especially be put down via single bonding connector The CURRENT DISTRIBUTION that weighs and heat distribution thus.The purpose is according to power semiconductor of the present invention by the feature with claim 1 Module is realized.Dependent claims disclose other particularly advantageous designs of the invention.It is worth noting that, in patent In the feature that individually refers to can with it is arbitrary, technically significant mode be combined with each other and illustrate others of the present invention and set Meter scheme.Description especially describes the feature of the present invention and describes the present invention in detail jointly with additional accompanying drawing.
Substrate is had according to the power semiconductor modular of the present invention, the substrate being preferably electrically insulated.E.g. ceramic substrate, example Such as Al2O3、AlN、Si3N4.The substrate is preferably placed on metal base plate, wherein, constructing the bottom plate is used to arrange and necessary When be fixed on heat sink place.
Further according to the present invention, at least one power semiconductor is set.The power semiconductor considered herein is for example not The structural detail of the controlled such as power diode also either knot of controlled such as power scr or power transistor Constitutive element part, such as bipolar transistor.The controlled structural detail has at least one other conjunction plane, and other conjunction planes are usual For provided by being arranged on the coat of metal on its first interarea, and opened and according to existing with load current conductive partition Technology is same to be connected by means of being bonded connector with the controlling potential face of substrate.Bonding connector between controller control is not Subject of the present invention.
According to the present invention, power semiconductor has conjunction plane on its dorsad side of substrate.The conjunction plane can be constructed It is divided into the continuous coat of metal or also, such as in emitter stage-conjunction plane that can be in IGBT situations.
In addition, arrangement arranged according to the present invention over the substrate by the power semiconductor, if necessary split Loaded level face.
Multiple it is used to the conjunction plane being connected with loaded level face parallel conductance in addition, arranged according to the present invention Connector is bonded, according to the present invention, each of multiple bonding connectors has the bonding pin of at least one first kind (referred to as First bonding pin), wherein, the first bonding pin is characterised by, is arranged at least one loaded level face.In addition, root Multiple second bonding pin are respectively provided with according to each of the multiple bonding connectors of the present invention, wherein, the bonding pin is arranged in the work( On the conjunction plane of rate semiconductor.According to the present invention, each bonding connector has at least one end, one on the conjunction plane Individual end is preferably provided on the loaded level face and an end is arranged on the conjunction plane, further preferably bonding connection Part is terminated in its end by means respectively of bonding pin.
According to the present invention, multiple bonding connectors are arranged at least two groups, and the group is identical by bonding pin quantity Multiple bonding connectors composition.According to the present invention, the second bonding pin of each bonding connector in a group is only It is arranged in the section limited by the conjunction plane part surface of the conjunction plane or region.In other words, spatially each other The section of the different groups of arrangement of segmentation or region are represented with reference to the second bonding pin：According to the present invention, group is not provided with The space overlap structure of second bonding pin.It is preferred that the second bonding pin of each bonding connector in a group is arranged only at institute In the common part surface of accurate one for stating conjunction plane.It is preferred that closure facet.It is preferred that each group sets 15 to 50 It is bonded connector, further preferably 16 to 30 bonding connectors.
According to the present invention, the corresponding difference of group is, its first bonding pin is arranged in the loaded level face On, and there are towards the power semiconductor different but consistent preferably in each group spacing.Except according to the present invention The bonding connector for belonging to group outside other bonding connectors can be set.The bonding connector is for example set so that can To electrically connect the affiliated controller control face in controlling potential face and controlled power semiconductor.
The basic thought of the present invention is that current density is more uniformly transmitted to the power half compared with prior art On the conjunction plane of conductor conducting load current.It has been observed that by (each in this embodiment according to the embodiment of the present invention The electric current input or export-restriction of group are on the region of the conjunction plane of the power semiconductor), realize especially uniform load CURRENT DISTRIBUTION and thus via bonding connector ohm heat loss distribution.
According to the present invention it is improved, from loaded level face to the contact surface of power semiconductor structure element or the coat of metal Bonding connector have multiple single bonding lines also or bonding tape, the bonding line and bonding tape have multiple in power half The second bonding pin on the coat of metal of conductor.The second bonding pin can be arranged arbitrarily.Preference rule arrangement second is bonded pin In involved section or region.For example arrange the crus secunda associated with respective sets chessboard trellis, wherein, the second bonding Pin is arranged only on the grid of identical " color " herein, i.e. row and misarrangement is turned up the soil arrangement.It is preferably placed in parallel identical In row, wherein, it is maintained at the spacing between the crus secunda along both direction of arest neighbors.
It is preferred that constructing bonding connector between bonding pin so that expanded in bonding connector by temperature correlation arc When can be as few as possible by mechanical tensile forces and/or pressure.
According to preferred embodiment, the bonding connector of group is not significantly different in length.Further preferably group Being bonded connector has whole identical length.
Aluminium or copper are had according to the material for the bonding connector for preferred embodiment, belonging to the group.Such as key Close connector be made up of raffinal or high-purity copper, preferably with 99.99% or preferably purity.Alternatively bonding connects Fitting for example can be made up of aluminium alloy or copper alloy, wherein, set for example magnesium, silicon, it is silver-colored or similar, for example improve key The heat conduction of conjunction connector or conductive characteristic or the additive of mechanical property are used as alloy additive.It is preferred that bonding connector is key Zygonema.For example bonding line has circular cross-section.Preferred cross-sections diameter is in scope from 100 μm to 800 μm, preferably from 125 μm Into 500 μm, such as 300 μm of scope.
There is third bond pin, the third bond pin respectively according to the bonding connector of group is preferred embodiment set The first bonding pin is arranged in be bonded with described second in the cabling of the bonding connector between pin and be arranged in gold Belong on coating, the coat of metal is arranged over the substrate with loaded level face electric insulation ground.Insulation arrangement is the present invention's Be related in meaning the coat of metal itself and thus with by it is described be bonded connector generation electrical connection do not conflict.In other words Say, in the design, the coat of metal is only electrically connected via at least one bonding connector with the loaded level face.Due to The additional arch guiding produced by additional bonding pin, produces the extension of involved bonding connector.This provides possibility, no It is balanced against others with group on its length for being bonded connector.Wherein, additional bonding pin provides bonding connector additional machine Tool stability, will not be in the meaning due on the coat of metal for be arranged in insulation and to the basic thought of the present invention at this CURRENT DISTRIBUTION have a negative impact.It is preferred that the third bond pin of the group is arranged in the common metal of the substrate On coating, other favourable cooling is obtained by the connection with the substrate.For example it puts down along with power semiconductor seamed edge Go and be spaced the imaginary line of extension to arrange.
Term " section " means region in meaning of the present invention, and the region is arranged with being electrically insulated from each other.For example it is related to The coat of metal, its electric insulation is obtained by being arranged on shown substrate, and is not excluded for a kind of other electrical connections.It is for example described to lead Be connected electrically in design and set up via load connection parts, thus cause the load current be output to the section or The common function of being inputted from the section.Such as parallel interval is in relative and the seamed edge of power semiconductor that put arranges the area Section.For example (part is used for external conductive end electrically and mechanically and if necessary from described load connection parts The housing of power semiconductor modular draws electrical connection) it is configured to the arch of specular construction.
For example, according to the power semiconductor modular of the present invention therefore with least one connector, it constructs archwise simultaneously And its arcuate end is contacted with two segments contacts, the preferred welds in loaded level face.For example, arch is metal forming part, it is excellent Elect the metal forming part being made up of copper or copper alloy as.
According to one kind preferred embodiment, the bonding connector of the group is disposed so as on its arrangement production Give birth to symmetrical.Here, should not exclude, the bonding connector except belonging to the group according to the present invention, also can be provided with bonding connection Part, these bonding connectors are simultaneously asymmetric, such as this to be used for the control interface of power semiconductor and affiliated controlling potential The bonding connector that face is connected.
According to a kind of preferred design, the difference of Liang Ge groups is the second bonding of each bonding connector The quantity of pin.For example, a group has each two second bonding pin of bonding connector, and another group has each key Close three second bonding pin of connector.
According to a kind of preferred design, affiliated loaded level face or affiliated loaded level face section with it is affiliated Contact surface region or contact surface section between have it is bigger, need by the group of described bonding connector bridge joint, With the second less bonding pin quantity of often bonding connector.
According to a kind of preferred design, the power semiconductor has in the range of 8.0mm to 50.0mm, preferably Minimum seamed edge length in the range of 9.0mm to 25.0mm, more preferably in the range of from 10.0mm to 20.0mm.
Preferably, the power semiconductor also include housing, for example by plastics, preferably by fiber strengthened plastics, for example The housing that fiber strengthened thermoplastic is made.Preferably, housing is configured to flange housing.
According to a kind of preferred design, according to the power semiconductor of the present invention have exactly two power semiconductor or The a number of power semiconductor of person, the quantity corresponds to 2 multiple.For example provided with corresponding to the quantity of the power semiconductor Substrate quantity.The bonding connector of first power semiconductor is arranged to Liang Ge groups, and the group is identical by multiple quantity Bonding pin bonding connector composition, and each bonding connector of a group the second bonding pin be arranged only at it is described In the section limited by the conjunction plane part surface of conjunction plane or region.The difference of the group of first semiconductor It is, its first bonding pin is arranged in the other areas different from two sections in the loaded level face of first power semiconductor Duan Shang, two sections are respectively arranged to two relative seamed edges of neighbouring first power semiconductor.With second power The bonding connector of semiconductor is connected, just what a loaded level face is arranged in the first power semiconductor and the second power half Between conductor, and the seamed edge and the remaining seamed edge of first power semiconductor of neighbouring second power semiconductor.One Plant in embodiment, the loaded level face of second power semiconductor is formed by the coat of metal of the substrate, the metal Coating contacts and/or constituted simultaneously the other load electricity for belonging to second power semiconductor with first power semiconductor Plane.Thus, in the case where realizing balanced current distribution, while obtaining power semiconductor and affiliated loaded level face Space-saving arrangement.Especially realize being arranged symmetrically for the loaded level face or its section.This has the following advantages, is It is being connected with external conductor (such as being arranged in outside the housing belonged to according to the power semiconductor modular of the present invention), generally make Connector equally can symmetric design, such as it is arched.This not only contributes to especially uniform CURRENT DISTRIBUTION and favourable Manufactured in simplifying according to module of the invention.
Power semiconductor is selected from including two grades of transistors, IGCT, the group of diode.Preferably, exactly two work( Rate semiconductor is a pair of different power semiconductors.
In addition the invention further relates to one kind by heat sink and power semiconductor modular is with embodiment explained above and has There is the component of the corresponding technological merit referred to before.
The present invention is elaborated according to accompanying drawing hereafter.Here, accompanying drawing only should exemplarily understand and only represent excellent Select embodiment.Wherein：
Fig. 1 shows the top view of the first embodiment of the power semiconductor modular 10 according to the present invention；
Fig. 2 shows the detailed view of Fig. 1 power semiconductor modular；
Fig. 3 shows another detailed view of Fig. 1 power semiconductor modular；
Fig. 4 shows the top view of the second embodiment of the power semiconductor modular 10 according to the present invention；
Fig. 5 shows the top view according to Fig. 4, wherein take out some components with clearly show that figure 4 illustrates structure； And
Fig. 6 shows the top view according to Fig. 4, wherein take out other components with clearly show that figure 4 illustrates knot Structure.
Fig. 1 to Fig. 3 shows the first embodiment of the power semiconductor modular 10 according to the present invention, and Fig. 4 to Fig. 6 shows The second embodiment of the power semiconductor modular 10 according to the present invention is gone out.The difference of the module of first and second embodiments Part essentially consists of the bonding bindiny mechanism of the used power semiconductor 2 of power semiconductor 1,2 and especially second.According to figure 1 to Fig. 3 first embodiment has two IGCTs as the first power semiconductor 1 and the second power semiconductor 2, with this phase Should, there are Fig. 4 to Fig. 6 embodiment two diodes to be used as the first power semiconductor 1 or the second power semiconductor 2.
The power semiconductor modular 10 of first embodiment has the bottom plate 5 of metal, and it is used to be arranged and secured within and not shown Go out it is heat sink on.Bottom plate 5 with it is heat sink back to side on be coated with the substrates 3,4 being made up of ceramics of two electric insulations. Substrate 3,4 and bottom plate 5 back to surface on multiple coats of metal have been respectively coated, one of them is used to fixing and making electrical contact with cloth Put the interarea in power semiconductor 1,2 thereon.Other coats of metal of substrate 3,4, which are used to provide, is used for power semiconductor 1,2 Loaded level face 13a, 13b, 23.Here, the first power half is distributed in the loaded level face formed by two sections 13a, 13b Conductor 1.Section 13a, 13b are distributed into loaded level face and pass through power semiconductor (being herein the negative electrode of power semiconductor 1) Identical function connects up to be formed, but the electric current of series connection also by unshowned connector corresponding to this inputs or exports to produce Raw, connecting piece structure is for arch or specular and with the arranged superposed of power semiconductor 1 and with its free arcuate end It is placed in that loaded level face 13a, 13b are upper to be welded together with it.Provided with by aluminium bonding line or alternatively copper bonding line constitute it is many Individual bonding connector 15,16, it is substantially parallel to one another arrangement.Each in these bonding connectors 15,16 has first It is bonded pin 31, it is characterised in that the first bonding pin has the contact with loaded level face or affiliated section.These bonding connections Each in part 15,16 is bonded pin 32 with least two, herein for three second, and the second bonding pin is characterised by, its Be arranged in conjunction plane 11 or affiliated region or as be herein conjunction plane 11 section 12a, 12b on.Next the bonding illustrated Pin 31,32,33 is connected by US wedges-Wedge Bond with the corresponding coat of metal contacted by being bonded connector.
Section 12a and 12b is also merged into conjunction plane 11 due to the function wiring of power semiconductor 1, is joined herein for negative electrode Junction.In order to high-visible, each first bonding pin 31 and second bonding pin 32 is no longer marked in figure, in bonding pin 31,32 Between, bonding connector form arc, its in figure 3 on the first power semiconductor 1 bonding connector and more clearly Show.The bonding connector of group 15 and 16 is characterised by that it has the second bonding pin 32 of identical quantity and with place End on contact surface 11.Therefore, unshowned bonding connector, its from the section 13a of loaded level face, formed it is multiple In the case of the second bonding pin 32 on conjunction plane 11, and do not terminate here, but extend to another loaded level face Section 13b, to terminate at herein, the bonding connector can not regard the bonding connection for according to the present invention's and belonging to group as Part.The bonding difference of connector 15 and 16 and packet are set in the following way：On the one hand the bonding connector of a group is only It is arranged in the section limited by the part face of conjunction plane, i.e. in the 12a or 12b of conjunction plane 11, and on the other hand, it first Bonding pin 31 is arranged on another section 13a or 13b in loaded level face.Have found, according in parallel and bifurcated of the invention Electric current is inputted or output (and under the best circumstances, such as herein, furcation extends up to the section of conjunction plane) is to CURRENT DISTRIBUTION With favorable influence, especially compared with the bonding connector extended on multiple sections known, in conjunction plane.Power is partly led The setting of second bonding pin 32 of the bonding connector of body 1 is with the specular along axle 44.
According to the design more particularly to the second power semiconductor 2 of the present invention, it is arranged on another substrate 4.In Fig. 2 In it is visible bonding connector 25,26 specific configuration.Power semiconductor 2 also relates to IGCT.Here, multiple bonding connectors 25th, 26 it is arranged at least two groups, these groups are by with the bonding multiple bonding connectors of the quantity identical of pin 31 and 32 Composition, and each bonding connector in a group the second bonding pin 32 be arranged only at by conjunction plane 21 it is closing, In section 22a or 22b that the common part face of conjunction plane is limited.Corresponding to this, the difference of group is, the first bonding Pin 31 is arranged on affiliated (herein for place on the substrate 3) loaded level face 23, and is had not towards power semiconductor 2 Same but consistent spacing a in each group1Or a2.Here, corresponding to the spacing a of group 262(the section 22a belonging to it It is spatially arranged as closer to involved loaded level face 23), select as the spacing a more than group 251(the area belonging to it Section 22b is spatially arranged as further from involved loaded level face), thus, approximately draw the length of bonding connector 25,26 Uniformity on degree.
There is the bottom plate 5 of metal in the power semiconductor modular 10 of Fig. 4 second embodiments shown into Fig. 6, it is used In be arranged and secured within it is unshowned it is heat sink on.Bottom plate 5 with it is heat sink back to side on be coated with two electric insulations by The substrate 3,4 that ceramics are made.Substrate 3,4 and bottom plate 5 back to surface on multiple coats of metal have been respectively coated, one of them The interarea for the power amplifier board semiconductor 1,2 being disposed thereon for fixed and electrical contact, power semiconductor is power mentioned above Diode.Other coats of metal of substrate 3,4 are used to provide the loaded level face 13a for power semiconductor 1,2,13b, 23. Here, the first power semiconductor 1 is distributed in the loaded level face formed by two sections 13a, 13b.By section 13a, 13b distribution Connect up to be formed by the identical function of power semiconductor (being herein the negative electrode of power semiconductor 1) to loaded level face, but with This corresponding electric current in parallel also by unshowned connector inputs or exports to produce, and connecting piece structure is arch or mirror image It is symmetrical and with the arranged superposed of power semiconductor 1 and with its free arcuate end be placed in loaded level face 13a, 13b it is upper and It welds together.Provided with by aluminium bonding line or multiple bonding connectors 15,16 that alternatively copper bonding line is constituted, its base each other It is arranged in parallel in sheet.Each in these bonding connectors 15,16 has the first bonding pin 31, it is characterised in that the first key Fit with the contact with loaded level face or affiliated section 13a or 13b.These are bonded each in connectors 15,16 Pin 32 are bonded with least two, herein for three second, the second bonding pin is characterised by that it is arranged in conjunction plane 11 or institute The region of category or as be herein conjunction plane 11 section 12a, 12b on.12a and 12b are distinguishable from one another by a dotted line herein in region, no In the presence of segmentation, but with the power semiconductor 1 of first embodiment on the contrary, conjunction plane 11 is limited by the continuous coat of metal It is fixed.In order to high-visible, each first bonding pin 31 and second bonding pin 32 is no longer marked in figure, bonding pin 31,32 it Between, bonding connector forms arc.The bonding connector of group 15 and 16 is characterised by that it has the second of identical quantity It is bonded pin 32 and with the end on contact surface 11.The bonding difference of connector 15 and 16 and packet come in the following way Set：On the one hand, the bonding connector of a group be arranged only in the section limited by the part face of conjunction plane, i.e. conjunction plane In 11 12a or 12b, and on the other hand, its first bonding pin 31 is arranged in another section 13a or 13b in loaded level face On.Have found, input or export according to the electric current of in parallel and bifurcated of the invention (and under the best circumstances, such as herein, bifurcated Portion extends up to the section of conjunction plane) there is favorable influence to CURRENT DISTRIBUTION, especially with multiple areas known, in conjunction plane The bonding connector extended in section is compared.
According to the design more particularly to the second power semiconductor 2 of the present invention, it is arranged on another substrate 4.In Fig. 5 In it is visible bonding connector 25,26 specific configuration, the specific configuration here by bonding connector 25 or 26 (it is by showing The mode of example is shown) show.Power semiconductor 2 also relates to IGCT.Here, multiple bonding connectors 25,26 are arranged in In at least two groups, group is made up of the multiple bonding connectors of the quantity identical of bonding pin 31 and 32, and in a group Each bonding connector second bonding pin 32 be arranged only at by closing, conjunction plane the common part face of conjunction plane 21 In the section 22a or 22b of restriction.But as seen in fig. 5, it should be understood by ignoring part bonding connector 25,26 It can be seen that, the difference of group is the quantity for being bonded pin.When group 25 has 3 bonding pin and two of which is the second bonding altogether During pin 32, it is the second bonding pin that there are 5, which to be bonded pin and wherein 3, for group 26.In addition, on conjunction plane 21 Second bonding pin 32 is bonded between pin 31 with first on loaded level face 23 is respectively equipped with third bond pin 33, and it is arranged On the coat of metal 30, the coat of metal 30 in the way of loaded level face 23 and the electric insulation of conjunction plane 21 by with being arranged in substrate 4 On.Only group 26 is bonded in connector at it has third bond pin 33, and third bond pin is all arranged in the coat of metal 30 On the face of closing.
Corresponding to this, the difference of the bonding connector of Liang Ge groups is in addition, and the first bonding pin 31 is arranged to On affiliated (herein for place on the substrate 3) loaded level face 23, and have towards power semiconductor 2 different but every Consistent spacing a in individual group1Or a2.Here, the spacing a of group 262(the section 22a belonging to it is spatially arranged more to lean on Nearly involved loaded level face 23), select as the spacing a more than group 251(the section 22b belonging to it is spatially arranged For further from involved loaded level face), thus, with reference to the second different and extra third bond pin 33 of bonding pin 32 quantity Feature, approximately draw in bonding connecting pin 25, the uniformity in 26 length.
It should be shown according to Fig. 5 and Fig. 6, the loaded level face 23 for belonging to the second power semiconductor 2 is arranged as, parallel to power The seamed edge of semiconductor 1 and 2 extends between power semiconductor 1 and 2, and the coat of metal 30 for being provided for third bond pin 33 is flat Go and be spaced extending between the seamed edge of the power semiconductor 2 of loaded level face 23 and second.Loaded level face 23 exists This is limited by the coat of metal, and the coat of metal faces substrate 3 below the first power semiconductor 1, in the first power semiconductor Interarea at contact the first power semiconductor extend up to opposite side, to limit the connection for unshowned connector herein Face 14 and solder side.

Claims (14)

1. a kind of power semiconductor modular (10), it has：
At least one substrate (4)；
At least one power semiconductor (2), it is arranged on the substrate (4) and had at it back on the side of the substrate There is conjunction plane (21)；
Be arranged on the substrate (4) the power semiconductor (2) it is other and divided loaded level face (23) if necessary；
Multiple bonding connectors (25,26), for the conjunction plane (21) and loaded level face (23) parallel conductance to be connected Connect, wherein, being each bonded connector (25,26) has at least one first bonding pin on the loaded level face (23) (31) multiple second bonding pin (32) and on the conjunction plane (21), and wherein, be each bonded connector (25,26) and exist There is at least one end on the conjunction plane (21),
Wherein, the multiple bonding connector (25,26) is arranged at least two groups (25 or 26), and the group is by being bonded Multiple bonding connectors composition of the identical quantity of pin, and the second bonding pin (32) of each bonding connector in a group It is arranged only in the section limited by the conjunction plane part surface of the conjunction plane (21) or region (22a or 22b), and Difference between the group is, its first bonding pin (31) is arranged on the loaded level face (23), and towards institute Power semiconductor (2) is stated with different but consistent preferably in each group spacing (a1 or a2).
2. the power semiconductor modular (10) according to previous claim, wherein, each key of each group (25 or 26) The the second bonding pin (31) for closing connector is arranged only in just what a common part surface of the conjunction plane (21).
3. the power semiconductor modular (10) according to any one of the claims, wherein, the common part table Face is closing.
4. the power semiconductor modular (10) according to any one of the claims, wherein, a group (25 or 26) Bonding connector it is not significantly different in length.
5. the power semiconductor modular (10) according to any one of the claims, wherein, the key of at least one group Closing connector (26) has third bond pin (33), and third bond pin is arranged in the first bonding pin (31) and second key Fit in the cabling of the bonding connector (26) between (32) and arrange on the coat of metal (30), the coat of metal (30) with The mode being electrically insulated with the loaded level face (23) is arranged on the substrate (4).
6. the power semiconductor modular (10) according to previous claim, wherein, the third bond pin of the group (26) (33) it is arranged on the common coat of metal (30).
7. the power semiconductor modular (10) according to any one of the claims, wherein, the bonding connector (25,26) are bonding lines.
8. the power semiconductor modular (10) according to any one of the claims, wherein, the of group (15 or 16) Two bonding pin (32) are arranged in the way of regular pattern.
9. the power semiconductor modular (10) according to any one of the claims, wherein, group described at least two The difference of (25 or 26) is the quantity of the second bonding pin (32) of each bonding connector.
10. the power semiconductor modular (10) according to any one of the claims, wherein, the power semiconductor tool Have in the range of 8.0mm to 50.0mm, preferably in the range of 9.0mm to 25.0mm, more preferably in 10.0mm extremely Minimum seamed edge length in the range of 20.0mm.
11. the power semiconductor modular (10) according to any one of the claims, wherein, each group provided with 15 to 50, preferably 16 to 30 bonding connectors.
12. the power semiconductor modular (10) according to any one of the claims, wherein, the power semiconductor (2) it is arranged in the affiliated loaded level face (23) in ceramic substrate (4).
13. the power semiconductor modular according to any one of the claims, wherein, the power semiconductor (2) is Diode, transistor or IGCT.
14. the power semiconductor modular according to any one of the claims, it has exactly two power semiconductor (1,2) or a number of power semiconductor, the quantity correspond to 2 multiple, wherein, first power semiconductor (1) Bonding connector (15,16) be arranged to Liang Ge groups (15 or 16), the group is connected by multiple bonding pin quantity identicals bondings Fitting is constituted, and the second bonding pin (32) of each bonding connector of a group is arranged only at the conjunction plane (11) In the section or region (22a or 22b) that are limited by the conjunction plane (11) part surface, and first semiconductor (1) The difference of group (15 or 16) is that its first bonding pin (31) is arranged in negative with first power semiconductor (1) Carry on the different other section (15,16) of two sections (13a, 13b) of potential surface, two sections are respectively arranged to neighbouring described Two relative seamed edges of the first power semiconductor (1), and with second power semiconductor (2) be bonded connector (25, 26) be connected, just what a loaded level face (23) is arranged in the first power semiconductor (1) and the second power semiconductor (2) between, and the seamed edge adjacent to second power semiconductor (2) and wherein one of first power semiconductor (1) Remaining seamed edge.
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