CN107154421A - In display device and display device on substrate barrier layer forming method - Google Patents
In display device and display device on substrate barrier layer forming method Download PDFInfo
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- CN107154421A CN107154421A CN201710331482.2A CN201710331482A CN107154421A CN 107154421 A CN107154421 A CN 107154421A CN 201710331482 A CN201710331482 A CN 201710331482A CN 107154421 A CN107154421 A CN 107154421A
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
- H10K59/10—OLED displays
- H10K59/12—Active-matrix OLED [AMOLED] displays
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
- H10K59/10—OLED displays
- H10K59/12—Active-matrix OLED [AMOLED] displays
- H10K59/123—Connection of the pixel electrodes to the thin film transistors [TFT]
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Abstract
The invention discloses the forming method on barrier layer on substrate in a kind of display device and display device, the display device includes：Substrate, encapsulated layer, electron emitting layer and luminescent layer electrode.Barrier layer is equipped with substrate；At least a portion on barrier layer is located at substrate towards the side of encapsulated layer；Electron emitting layer is located between substrate and encapsulated layer, and the first pixel electrode and the second pixel electrode are connected with electron emitting layer；Luminescent layer electrodes lay is between electron emitting layer and encapsulated layer, wherein, active layer, source-drain electrode and gate electrode are formed between barrier layer and encapsulated layer, source-drain electrode is electrically connected with active layer, and gate electrode insulate with active layer and source-drain electrode respectively, source-drain electrode is connected with the first pixel electrode, and gate electrode is connected with the second pixel electrode.Display device according to embodiments of the present invention, can effectively improve stability.
Description
Technical field
The present invention relates to display device technical field, stop in more particularly to a kind of display device and display device on substrate
The forming method of layer.
Background technology
OLED is the thin film light emitting device that a kind of utilization organic semiconducting materials are made, and it has self luminous characteristic.
OLED is mainly made of relatively thin coating of organic material and glass substrate, and without backlight.Therefore, when there is current path
When, these organic materials will actively light.Because OLED drives dependent on electric current, therefore OLED luminosity is with flowing through this
OLED size of current is relevant, so the electrical property of the thin film transistor (TFT) (Thin-film transistor, TFT) as driving
The threshold voltage that can directly affect above-mentioned OLED display effect, especially TFT often drifts about so that whole OLED
The problem of display device occurs in that brightness irregularities.
In order to improve above-mentioned OLED display effect, typically pixel compensation will be carried out to OLED by drive circuit.So
And, the data voltage signal and reference voltage signal of existing OLED pixel compensation circuit need to input using different wirings,
And above-mentioned data voltage signal and reference voltage signal are respectively necessary for a TFT and carry out SECO output.Existing OLED
In image element circuit, generally realize that threshold voltage compensation draws to tackle TFT devices under long-term work based on circuit design technique
The performance drift risen, this considerably increases the complexity of drive circuit, adds the area of image element circuit.
Polymeric substrates, such as Kapton, poly- naphthalenedicarboxylic acid second are used flexible base board in flexible display apparatus more
Terephthalate films etc., these substrates need increase MULTILAYER COMPOSITE diaphragm to increase water oxygen blocking effect.In the prior art at least
There are the following problems：Prepared by the barrier layer of double-layer structure will complete to prepare by two steps, and complex steps are, it is necessary to put into different set
It is standby, to use plasma enhanced chemical vapor deposition during particularly with regard to parent's property material, particularly inorganic parent's property material
(PECVD), equipment is expensive.Further, since Presence of an interface problem between organic-inorganic material, is easily layered.
The content of the invention
It is contemplated that at least solving one of technical problem in correlation technique to a certain extent.Therefore, the present invention
One purpose is to propose a kind of display device, can suppress threshold voltage shift.
Display device according to embodiments of the present invention, including：Substrate, encapsulated layer, electron emitting layer and luminescent layer electrode.Institute
State and barrier layer is equipped with substrate；At least a portion on the barrier layer is located at the substrate towards the side of the encapsulated layer；
The electron emitting layer is located between the substrate and the encapsulated layer, and the first pixel electrode is connected with the electron emitting layer
With the second pixel electrode；The luminescent layer electrodes lay between the electron emitting layer and the encapsulated layer, wherein, the resistance
Active layer, source-drain electrode and gate electrode, the source-drain electrode and active layer electricity are formed between barrier and the encapsulated layer
Connect, and the gate electrode insulate with the active layer and the source-drain electrode respectively, the source-drain electrode and first picture
Plain electrode is connected, and the gate electrode is connected with second pixel electrode.
Display device according to embodiments of the present invention, the compensating electrode of pixel electrode layer formation can effectively improve stability
While, simplify the increased elemental area of circuit design technique institute.
In addition, display device according to the above embodiment of the present invention, can also have technical characteristic additional as follows：
In some embodiments of the invention, the barrier layer includes inorganic barrier layer and inorganic barrier layer.
In some embodiments of the invention, the inorganic barrier layer is laid on the substrate, the inorganic barrier layer
On the surface for being formed at the inorganic barrier layer, the inorganic barrier layer forms the inorganic barrier layer by surface treatment.
In some embodiments of the invention, the inorganic barrier layer is dimethyl silicone polymer layer, the inorganic barrier
Layer is silicon dioxide layer.
In some embodiments of the invention, the active layer is located on the barrier layer, and the source-drain electrode formation exists
On the barrier layer or the active layer.
In some embodiments of the invention, the gate electrode is spaced apart with the active layer, and the gate electrode and institute
Deposition has insulating barrier between stating active layer.
In some embodiments of the invention, the substrate is flexible base board, and the substrate is Kapton or poly-
(ethylene naphthalate) film.
In some embodiments of the invention, at least one in the substrate and the active layer includes organic semiconductor
At least one of with metal-oxide semiconductor (MOS).
In some embodiments of the invention, the organic semiconducting materials include polythiophene, it is polyaniline, polypyrrole, poly-
Fluorenes, pentacene, phthalein blue or green at least one of oxygen titanium and rubrene；The metal oxide semiconductor material includes zinc oxide, oxygen
Change at least one of indium zinc, zinc-tin oxide, gallium indium zinc oxide and zirconium indium-zinc oxide (ZrInZnO).
Present invention also offers it is a kind of according in the foregoing display device stated on substrate barrier layer forming method, it is described into
Type method includes：One layer is coated on the substrate through hydroxylated PDMS membrane layer, then to poly dimethyl silicon
Siloxane film layer carries out oxidation processes and forms silica coating with the surface in PDMS membrane layer, then to poly- diformazan
Radical siloxane film layer carries out low-temperature setting shaping.
Brief description of the drawings
Fig. 1 and Fig. 2 are the schematic diagrames of the display device of different embodiments of the invention.
Reference：Display device 100, substrate 101, encapsulated layer 110, electron emitting layer 108, luminescent layer electrode 109, resistance
Barrier 102, active layer 103, source-drain electrode 104, gate electrode 105, inorganic barrier layer 1021, inorganic barrier layer 1022.First picture
Plain electrode 106, the second pixel electrode 107.
Embodiment
Embodiments of the invention are described below in detail, the example of the embodiment is shown in the drawings, wherein from beginning to end
Same or similar label represents same or similar element or the element with same or like function.Below with reference to attached
The embodiment of figure description is exemplary, it is intended to for explaining the present invention, and be not considered as limiting the invention.
In order to solve some technical problems in correlation technique, the invention provides a kind of display device 100.
The display device 100 of the embodiment of the present invention is described with reference to the accompanying drawings.
Such as Fig. 1 and Fig. 2, display device 100 according to embodiments of the present invention, including：Substrate 101, encapsulated layer 110, electronics
Luminescent layer 108 and luminescent layer electrode 109.
Specifically, it is equipped with barrier layer 102 on the substrate 101.At least a portion on the barrier layer 102 is located at institute
Substrate 101 is stated towards the side of the encapsulated layer 110.The electron emitting layer 108 is located at the substrate 101 and the encapsulated layer
Between 110, the first pixel electrode 106 and the second pixel electrode 107 are connected with the electron emitting layer 108.The luminescent layer
Electrode 109 is laid between the electron emitting layer 108 and the encapsulated layer 110, wherein, the barrier layer 102 and the envelope
Active layer 103, source-drain electrode 104 and gate electrode 105, the source-drain electrode 104 and the active layer are formed between dress layer 110
103 electrically connect, and the gate electrode 105 insulate with the active layer 103 and the source-drain electrode 104 respectively, the source and drain electricity
Pole 104 is connected with first pixel electrode 106, and the gate electrode 105 is connected with second pixel electrode 107.
Display device 100 according to embodiments of the present invention, the compensating electrode of pixel electrode layer formation can be effectively improved surely
While qualitative, the increased elemental area of circuit design technique institute is simplified.
In the case of illumination or heating bias, the thin film transistor (TFT) formed on the substrate 101 can prevent its threshold voltage
Drift about, so as to improve the reliability of thin film transistor (TFT), and simplify the complexity of threshold voltage compensation circuit design, and then
Lift the display quality of OLED flexible display panels；
In addition, while character constancy is improved, the preparation technology on barrier layer 102 is simple, cost reduction improves system
Standby process efficiency, improves the stability of device
Present invention, avoiding in place of some shortcomings present in correlation technique, display device 100 of the invention in illumination or
In the case of heating bias, the thin film transistor (TFT) formed on the substrate 101 can prevent its threshold voltage from drifting about, so as to improve
The reliability of thin film transistor (TFT), and the complexity of threshold voltage compensation circuit design is simplified, and then lift OLED Flexible Displays
The display quality of panel；While character constancy is improved, the preparation technology on barrier layer 102 is simple, and cost reduction is improved
Preparation technology efficiency, improves the stability of device.
In addition, display device 100 according to the above embodiment of the present invention, can also have technical characteristic additional as follows：
Barrier layer 102 in the present invention can be inorganic barrier layer 1021, inorganic barrier layer 1022 etc. or a variety of
The combination on the barrier layer 102 of form.
As illustrated in fig. 1 and 2, the barrier layer 102 includes inorganic barrier layer 1021 and inorganic barrier layer 1022.Organic barrier
The cooperation of layer 1021 and inorganic barrier layer 1022, can effectively stop that water etc. is possible to damage the stability of display device 100
Influence factor, so as to improve the stability of display device 100.
In some embodiments of the present invention, the barrier layer on flexible oled substrate is by thin polymer film and inorganic material film
Alternating deposit is formed, you can using the good barrier properties of inorganic material, can be blocked again by organic material inside inorganic material
The permeation pathway of the continuous growth of defect, extension steam and oxygen molecule, effectively reduces WVTR (Water Vapor
Transmission Rate, water vapor transmission rate) and OTR (Oxygen Transmission Rate, oxygen transmission rate).But barrier
Prepared by layer will complete to prepare by least two steps, and complex steps are, it is necessary to put into different equipment, particularly with regard to parent's property material
Plasma enhanced chemical vapor deposition (PECVD) is used when material, particularly inorganic parent's property material, equipment is expensive.In addition, by
The Presence of an interface problem between organic-inorganic material, is easily layered.
Therefore, the invention provides some more preferable barrier layers 102 and its molding mode.
Such as Fig. 1 and Fig. 2, the inorganic barrier layer 1021 is laid on the substrate 101, the shape of inorganic barrier layer 1022
Described in Cheng Yu on the surface of inorganic barrier layer 1021, the inorganic barrier layer 1021 forms the inorganic barrier by surface treatment
Layer 1022.The inorganic barrier layer 1022 formed by the surface treatment of inorganic barrier layer 1021 so that the He of inorganic barrier layer 1021
Intensity between inorganic barrier layer 1022 is high and stability is good, and forms inorganic barrier layer on the surface of inorganic barrier layer 1021
1022 technique is relatively easy to, so as to reduce technology difficulty.
For example, a kind of preparation method on simple and effective barrier layer 102 that the present invention is provided is as follows：
1) one layer is coated on flexible base board 101 through hydroxylated PDMS film layers using rubbing method or spin-coating method；
2) and then to PDMS film layers oxidation processes (such as UV/O is carried out3Processing), it is bordering on oxidation processes side in PDMS film
Surface is formed compared with PDMS film slightly hard SiO2Film layer；
3) low-temperature setting shaping (such as 60 DEG C solidification 4h) is carried out to PDMS film again, nothing is formed in the top of flexible base board 101
Machine-organic insulation layer material, is used as the material of barrier layer 102 of flexible oled substrate 101.While character constancy is improved,
The preparation technology on barrier layer 102 is simple, cost reduction, improves preparation technology efficiency.
In addition, dimethyl silicone polymer (PDMS, polydimethylsiloxane) is organosilicone copolymer, with electric exhausted
Edge and resistant of high or low temperature, can be used for a long time at -50 DEG C to+250 DEG C, and compression ratio is big, and surface tension is low, hydrophobic moisture resistance
It is good, it is used for electric appliance and electronic industrial circle.The property of PDMS low-surface-energies, which is after fluid, easily reaches smooth, uniform apply
Layer.According to different demands, PDMS polymer can be modified.PDMS modification can be modified or polystyrene for hydroxylating
Block PDMS (i.e. PS-b-PDMS), also or other block PDMS materials.Modified PDMS can be described as its derivative.
By above-mentioned, it is preferable that the inorganic barrier layer 1021 is dimethyl silicone polymer layer, the inorganic barrier layer 1022
For silicon dioxide layer.
In addition, inorganic barrier layer 1021 can be type siloxane organic material, but it is not limited to hydroxylated poly dimethyl silicon
The dimethyl silicone polymer and its derivative of oxygen alkane, such as polystyrene block also have lyophily property, and after it is oxidized
The inorganic silicon dioxide layer of lyophoby can be changed into, identical technique effect can be also obtained.
In the present invention, the generation type of thin film transistor (TFT) has a variety of, including is not limited to that mode is implemented as follows.
Such as Fig. 1, the active layer 103 is located on the barrier layer 102, and the source-drain electrode 104 is formed to be stopped described
On layer 102；And for example Fig. 2, the active layer 103 is located on the barrier layer 102, and the source-drain electrode 104 is formed to be had described
In active layer 103.
In addition, such as Fig. 1 and Fig. 2, the gate electrode 105 is spaced apart with the active layer 103, in order to improve thin film transistor (TFT)
And the stability of display device 100, deposition has insulating barrier between the gate electrode 105 and the active layer 103.
In some embodiments of the invention, the substrate 101 is flexible base board 101.Preferably, the substrate 101 is
Kapton or PEN film.
In addition, in the present invention, at least one in the substrate 101 and the active layer 103 include organic semiconductor and
At least one of metal-oxide semiconductor (MOS).
Preferably, the organic semiconducting materials include the blue or green oxygen of polythiophene, polyaniline, polypyrrole, polyfluorene, pentacene, phthalein
At least one of titanium and rubrene.
Further, the metal oxide semiconductor material includes zinc oxide, indium zinc oxide, zinc-tin oxide, gallium indium zinc
At least one of oxide and zirconium indium-zinc oxide (ZrInZnO).
While the compensating electrode of pixel electrode layer formation can effectively improve stability, circuit design technique is simplified
The increased elemental area of institute.The beneficial effect of generation：In the case of illumination or heating bias, on the substrate 101 thin is formed
Film transistor can prevent its threshold voltage from drifting about, so that the reliability of thin film transistor (TFT) is improved, and then it is flexible to lift OLED
The display quality of display panel.
The active layer 103 of flexible display substrates 101 and display device can be organic semiconducting materials and metal oxide
Semi-conducting material.Organic semiconducting materials can be polythiophene (P3HT), polyaniline (PAE), polypyrrole, polyfluorene (PF) and five
The blue or green oxygen titanium of benzene, phthalein, rubrene etc.；Metal oxide semiconductor material can be zinc oxide (ZnO), indium zinc oxide (InZnO), oxygen
Change zinc-tin (ZnSnO), gallium indium zinc oxide (GaInZnO) to be made with the one or more in zirconium indium-zinc oxide (ZrInZnO).
The present invention provides a kind of preparation method and display device 100 of the flexible base board 101 of top gate structure.Pixel electrode layer
While the compensating electrode of formation can effectively improve stability, the increased elemental area of circuit design technique institute is simplified；
The preparation technology on the barrier layer 102 formed on the surface of substrate 101 is simple, and cost is relatively low.Preparation flow is as follows：
1. source-drain electrode 104, active layer 103, gate electrode 105 and pixel electrode are formed on flexible base board 101；Wherein one
Locate pixel electrode to be electrically connected with drain electrode, to provide electric signal to TFT；Pixel electrode is electrically connected with gate electrode 105 at one,
To adjust the electric signal of gate electrode 105 by pixel electrode at this, reduce threshold voltage and drift about, so as to improve thin film transistor (TFT)
Reliability；
2. on the flexible basic preparation barrier layer 102 between TFT electrodes, the material of barrier layer 102 is one layer hydroxy functionalized
PDMS polymer or for its derivative, and carry out oxidation processes from the top of substrate 101, one layer of the one side formation in processing direction
SiO2Film；Prepared barrier layer 102 can be blocked by organic material again i.e. using the good barrier properties of inorganic material
The permeation pathway of the continuous growth of inorganic material internal flaw, extension steam and oxygen molecule, effectively reduces WVTR (Water
Vapor Transmission Rate) and OTR (Oxygen Transmission Rate)；
3. on above-mentioned flexible base board 101, the anode or negative electrode of organic electronic functional layer are made up of pixel electrode, use
Ink-jet printing process prepares organic electronic functional layer, then the electrode and encapsulated layer 110 above organic electronic functional layer are constituted together
OLED display device.
The forming method on barrier layer on a kind of substrate of the present invention is described with reference to the accompanying drawings.
Forming method described in the forming method on barrier layer includes on substrate according to embodiments of the present invention：On the substrate
Coating one layer through hydroxylated PDMS membrane layer, then to PDMS membrane layer carry out oxidation processes with
The surface of PDMS membrane layer forms silica coating, then carries out low-temperature setting to PDMS membrane layer
Shaping.
The forming method may apply in foregoing display device 100.
Some embodiments are described with reference to the accompanying drawings.
Embodiment 1
Such as Fig. 1
1. barrier layer 102 is formed on flexible base board 101；
2. the figure of organic semiconductor active layer 103 and source-drain electrode 104 is formed on the blocking layer 102, wherein source and drain electricity
Level 104 and active layer 103 are electrically connected with；
3. gate electrode 105 is formed on the figure of source-drain electrode 104, wherein deposition has insulating layer material between the two layers；
4. preparing pixel electrode figure on gate electrode 105, the first pixel electrode 106 is connected with drain electrode, the second pixel
Electrode 107 is connected with gate electrode 105, and the electrical signal provided by the second pixel electrode 107 adjusts its threshold voltage and reduces threshold
Threshold voltage drifts about, so as to improve the reliability of thin film transistor (TFT)；There is insulation between gate electrode 105 and pixel electrode figure
Layer material；A kind of flexible display substrates 101 of bottom grating structure formed above；
5. using inkjet printing methods, Organic Electricity subfunction layer (electronics hair as the aforementioned is coated on pixel electrode figure
Photosphere 108)；
6. EL electrodes (luminescent layer electrode 109 as the aforementioned) are formed in the top of organic electronic luminescent layer 108, in electrode pattern
Upper formation encapsulating material layer (i.e. foregoing encapsulated layer 110), forms a kind of flexible display substrates 101 and display of top gate structure
Part.
The forming step on wherein barrier layer 102 is as follows：
1) using rubbing method or spin-coating method coat on the gate patterns one layer it is (as the aforementioned through hydroxylated PDMS film layers
Inorganic barrier layer 1021)；
2) and then to PDMS film layers oxidation processes (such as UV/O is carried out3Processing), it is bordering on oxidation processes side in PDMS film
Surface is formed compared with PDMS film slightly hard SiO2Film layer (inorganic barrier layer 1021 as the aforementioned)；
3) low-temperature setting shaping (such as 60 DEG C solidification 4h) is carried out to PDMS film again, nothing is formed in the top of flexible base board 101
Machine-organic insulation layer material, inorganic barrier layer 1021 and inorganic barrier layer 1022 are used as the material of barrier layer 102.
Embodiment 2
Such as Fig. 2
1. barrier layer 102 is formed on flexible base board 101；
2. metal-oxide semiconductor (MOS) active layer 103 is formed on the blocking layer 102；
3. source-drain electrode 104 and gate electrode 105 are formed on metal-oxide semiconductor (MOS) active layer 103, wherein active
Deposition has insulating layer material between layer 103 and gate electrode 105；
4. preparing pixel electrode figure on gate electrode 105, the first pixel electrode 106 is connected with drain electrode, the second pixel
Electrode 107 is connected with gate electrode 105, and the electrical signal provided by the second pixel electrode 107 adjusts its threshold voltage and reduces threshold
Threshold voltage drifts about, so as to improve the reliability of thin film transistor (TFT)；There is insulation between gate electrode 105 and pixel electrode figure
Layer material；A kind of flexible display substrates 101 of bottom grating structure formed above；
5. using inkjet printing methods, Organic Electricity subfunction layer is coated on pixel electrode figure, and (such as aforementioned electronic lights
Layer is 108)；
6. EL electrodes (such as aforementioned light emission layer electrode 109) are formed in the top of organic electronic luminescent layer 108, on electrode pattern
Encapsulating material layer (such as aforementioned encapsulation layer 109) is formed, a kind of flexible display substrates 101 and display device of top gate structure are formed.
The forming step on wherein barrier layer 102 is as follows：
1) using rubbing method or spin-coating method coat on the gate patterns one layer it is (as the aforementioned through hydroxylated PDMS film layers
Inorganic barrier layer 1021)；
2) and then to PDMS film layers oxidation processes (such as UV/O is carried out3Processing), it is bordering on oxidation processes side in PDMS film
Surface is formed compared with PDMS film slightly hard SiO2Film layer (inorganic barrier layer 1021 as the aforementioned)；
3) low-temperature setting shaping (such as 60 DEG C solidification 4h) is carried out to PDMS film again, nothing is formed in the top of flexible base board 101
Machine-organic insulation layer material, inorganic barrier layer 1021 and inorganic barrier layer 1022 are used as the material of barrier layer 102.
Display device 100 according to embodiments of the present invention, the barrier layer 102 of flexible oled substrate 101 uses type siloxane
Prepared by organic material, form the film layer with inorganic-organic material, while character constancy is improved, the system on barrier layer 102
Standby technique is simple, cost reduction, improves preparation technology efficiency；It can be effectively improved in the compensating electrode of pixel electrode layer formation
While stability, and the complexity of threshold voltage compensation circuit design is simplified, less circuit design technique institute is increased
Elemental area, improves the stability of device, and then lift the display quality of OLED flexible display panels；The material of barrier layer 102
While obstructing steam, improving character constancy, the preparation technology on barrier layer 102 is simple, and cost reduction improves preparation work
Skill efficiency.
In the present invention, SiO is generated by UV (ultraviolet) or ozone oxidation PDMS2, for making in flexible base board 101
Barrier layer 102, simple with preparation technology, cost is low, the characteristics of barrier steam effect is good.
In addition.General PDMS, because chain structure is close, is difficult to be produced change by extraneous chemical action, such as not The book of Changes
Oxidation generation SiO2Layer, but the PDMS that suitable polymeric degree or end group and side base are modified can produce change through extraneous chemical action.
In the present invention, while the compensating electrode of pixel electrode layer formation can effectively improve stability, and simplify
The complexity of threshold voltage compensation circuit design, reaches and prepares the stable flexible display device of electrology characteristic, so that will be soft jointly
The application field of property device is expanded.
In the description of this specification, reference term " one embodiment ", " some embodiments ", " example ", " specifically show
The description of example " or " some examples " etc. means to combine specific features, structure, material or the spy that the embodiment or example are described
Point is contained at least one embodiment of the present invention or example.In this manual, to the schematic representation of above-mentioned term not
Identical embodiment or example must be directed to.Moreover, specific features, structure, material or the feature of description can be with office
Combined in an appropriate manner in one or more embodiments or example.In addition, in the case of not conflicting, the skill of this area
Art personnel can be tied the not be the same as Example or the feature of example and non-be the same as Example or example described in this specification
Close and combine.
Although embodiments of the invention have been shown and described above, it is to be understood that above-described embodiment is example
Property, it is impossible to limitation of the present invention is interpreted as, one of ordinary skill in the art within the scope of the invention can be to above-mentioned
Embodiment is changed, changed, replacing and modification.
Claims (10)
1. a kind of display device, it is characterised in that including：
Barrier layer is equipped with substrate, the substrate；
Encapsulated layer, at least a portion on the barrier layer is located at the substrate towards the side of the encapsulated layer；
Electron emitting layer, the electron emitting layer is located between the substrate and the encapsulated layer, is connected on the electron emitting layer
It is connected to the first pixel electrode and the second pixel electrode；
Luminescent layer electrode, the luminescent layer electrodes lay between the electron emitting layer and the encapsulated layer,
Wherein, active layer, source-drain electrode and gate electrode, the source-drain electrode are formed between the barrier layer and the encapsulated layer
Electrically connected with the active layer, and the gate electrode insulate with the active layer and the source-drain electrode respectively, the source and drain electricity
Pole is connected with first pixel electrode, and the gate electrode is connected with second pixel electrode.
2. display device according to claim 1, it is characterised in that the barrier layer includes inorganic barrier layer and inorganic resistance
Barrier.
3. display device according to claim 2, it is characterised in that the inorganic barrier layer is laid on the substrate,
The inorganic barrier layer is formed on the surface of the inorganic barrier layer, and the inorganic barrier layer forms described by surface treatment
Inorganic barrier layer.
4. the display device according to Claims 2 or 3, it is characterised in that the inorganic barrier layer is polydimethylsiloxanes
Alkane layer, the inorganic barrier layer is silicon dioxide layer.
5. the display device according to Claims 2 or 3, it is characterised in that the active layer is located on the barrier layer, institute
Source-drain electrode formation is stated on the barrier layer or the active layer.
6. the display device according to Claims 2 or 3, it is characterised in that the gate electrode is spaced apart with the active layer,
And deposition has insulating barrier between the gate electrode and the active layer.
7. the display device according to Claims 2 or 3, it is characterised in that the substrate is flexible base board, the substrate is
Kapton or PEN film.
8. the display device according to Claims 2 or 3, it is characterised in that in the substrate and the active layer at least
One includes at least one of organic semiconductor and metal-oxide semiconductor (MOS).
9. display device according to claim 8, it is characterised in that the organic semiconducting materials include polythiophene, gathered
Aniline, polypyrrole, polyfluorene, pentacene, phthalein blue or green at least one of oxygen titanium and rubrene；
The metal oxide semiconductor material includes zinc oxide, indium zinc oxide, zinc-tin oxide, gallium indium zinc oxide and zirconium indium zinc
At least one of oxide (ZrInZnO).
10. in a kind of display device according to any one of claim 1-9 on substrate barrier layer forming method, it is special
Levy and be, the forming method includes：
One layer is coated on the substrate through hydroxylated PDMS membrane layer, then to PDMS membrane layer
Carry out oxidation processes and silica coating is formed with the surface in PDMS membrane layer, then to dimethyl silicone polymer
Film layer carries out low-temperature setting shaping.
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| Publication number | Priority date | Publication date | Assignee | Title |
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| CN110854172A (en) * | 2019-11-26 | 2020-02-28 | 京东方科技集团股份有限公司 | Semiconductor device, pixel circuit, display panel, and display device |
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