CN107144210B - Method for measuring line width and roughness of electron microscopic image - Google Patents
Method for measuring line width and roughness of electron microscopic image Download PDFInfo
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- 238000000034 method Methods 0.000 title claims abstract description 64
- 238000009826 distribution Methods 0.000 claims abstract description 68
- 238000000691 measurement method Methods 0.000 claims description 22
- 238000000635 electron micrograph Methods 0.000 claims description 19
- 238000004458 analytical method Methods 0.000 claims description 17
- 230000003595 spectral effect Effects 0.000 claims description 15
- 238000004626 scanning electron microscopy Methods 0.000 claims description 10
- 238000012545 processing Methods 0.000 claims description 8
- 238000013459 approach Methods 0.000 claims description 4
- 238000009795 derivation Methods 0.000 claims description 3
- 238000001914 filtration Methods 0.000 claims description 3
- 238000007689 inspection Methods 0.000 claims description 3
- 238000012216 screening Methods 0.000 claims 1
- 238000005259 measurement Methods 0.000 abstract description 20
- 230000000694 effects Effects 0.000 abstract description 4
- 238000012935 Averaging Methods 0.000 abstract 1
- 238000010894 electron beam technology Methods 0.000 description 15
- 238000003384 imaging method Methods 0.000 description 14
- 238000005530 etching Methods 0.000 description 6
- 238000001259 photo etching Methods 0.000 description 3
- 230000007547 defect Effects 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 239000000758 substrate Substances 0.000 description 2
- 229910000577 Silicon-germanium Inorganic materials 0.000 description 1
- 238000012512 characterization method Methods 0.000 description 1
- 238000005520 cutting process Methods 0.000 description 1
- 125000004122 cyclic group Chemical group 0.000 description 1
- 239000003989 dielectric material Substances 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 230000003628 erosive effect Effects 0.000 description 1
- 238000009499 grossing Methods 0.000 description 1
- 230000004807 localization Effects 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 238000004377 microelectronic Methods 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 230000005693 optoelectronics Effects 0.000 description 1
- 229920002120 photoresistant polymer Polymers 0.000 description 1
- 238000012827 research and development Methods 0.000 description 1
- 238000004439 roughness measurement Methods 0.000 description 1
- 238000001878 scanning electron micrograph Methods 0.000 description 1
- 238000010187 selection method Methods 0.000 description 1
- 238000001039 wet etching Methods 0.000 description 1
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01B—MEASURING LENGTH, THICKNESS OR SIMILAR LINEAR DIMENSIONS; MEASURING ANGLES; MEASURING AREAS; MEASURING IRREGULARITIES OF SURFACES OR CONTOURS
- G01B7/00—Measuring arrangements characterised by the use of electric or magnetic techniques
- G01B7/02—Measuring arrangements characterised by the use of electric or magnetic techniques for measuring length, width or thickness
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01B—MEASURING LENGTH, THICKNESS OR SIMILAR LINEAR DIMENSIONS; MEASURING ANGLES; MEASURING AREAS; MEASURING IRREGULARITIES OF SURFACES OR CONTOURS
- G01B7/00—Measuring arrangements characterised by the use of electric or magnetic techniques
- G01B7/34—Measuring arrangements characterised by the use of electric or magnetic techniques for measuring roughness or irregularity of surfaces
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- Length-Measuring Devices Using Wave Or Particle Radiation (AREA)
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Abstract
The invention belongs to the technical field of scanning electron microscopic measurement, and discloses a method for measuring line width and roughness of an electron microscopic image, which comprises the following steps: obtaining a scanning electron microscopic image of a line structure to be detected; intercepting a first area; carrying out averaging treatment along the line direction to obtain a line edge pixel distribution curve; determining a first boundary area according to the line edge pixel distribution curve; analyzing local pixels to obtain boundary distribution; and calculating the width and the roughness of the line to be detected according to the boundary distribution, and extracting the width and the roughness value of the line to be detected. The invention solves the problems that the workload of measuring the width and the roughness of the line is large, the measurement error caused by human intervention exists, and only a limited number of data points can be analyzed in the prior art, and achieves the technical effects of improving the accuracy and the reliability of measurement and saving the actual measurement time and cost of an engineer.
Description
Technical field
The present invention relates to scanning electron microscopy field of measuring technique more particularly to a kind of electron micrograph image line thickness and
The measurement method of roughness.
Background technique
In fields such as microelectronics, photoelectron, MEMS, precise measurement line thickness and roughness are one and very important answer
With.Especially for certain situations, micro-nano device structure is distributed comprising Electronic beam intensity very serious, such as front layer figure
There are figures to have a larger impact to electron beam imaging for layer, or pair cross-section carries out electron beam imaging and assessment along height side after slice
The distribution of Electronic beam is seriously affected by height and position when to line thickness, these phenomenons make to measure lines wide
There are major defects when spending.
Existing technology is in such issues that processing, it usually needs the specified adjustment location of engineer avoids the shadow of background graphics
Loud or different zones use independent parameter value, these methods bring biggish workload, and can only analyze finite number
Strong point, and there are measurement errors caused by human intervention.
Summary of the invention
The embodiment of the present application is solved by providing the measurement method of a kind of electron micrograph image line thickness and roughness
Line thickness and roughness larger workload are measured in the prior art, there are measurement error caused by human intervention and can only be analyzed
The problem of finite number strong point.
The embodiment of the present application provides the measurement method of a kind of electron micrograph image line thickness and roughness, comprising: obtains
The scanning electron microscopy picture of linear to be measured；
Intercept first area；
Image in the first area is carried out it is bent to obtain line edge pixel distribution along line orientations handling averagely
Line；
According to the line edge pixel distribution curve, the first borderline region is determined；
Local pixel analysis is carried out to the image in first borderline region, obtains boundary distribution；
It is distributed according to the boundary, calculates the width and roughness of the lines to be measured, extract the width of the lines to be measured
Degree value and roughness value.
Preferably, after the scanning electron microscopy picture for obtaining linear to be measured, further includes: determine laterally and
Actual physics length representated by each longitudinal pixel.
Preferably, the first area is not comprising any one or more following region: scale, mark and non-interesting
Region.
Preferably, described according to the line edge pixel distribution curve, determine the first borderline region, comprising:
Select the region within the scope of the first extreme value of pixel as basic borderline region；
To the first width of the basic overseas expansion in frontier district, the basic borderline region and first width constitute institute
State the first borderline region.
Preferably, pixel the first extreme value range is that pixel extreme value corresponds to the 20%~80% of width.
Preferably, it is also wrapped after determining the first borderline region described according to the line edge pixel distribution curve
It includes:
To the line edge pixel distribution curve derivation, the maximum value of slope absolute value is obtained, with first boundary
Region carries out intersection inspection, exclusive PCR region.
Preferably, the image in first borderline region carries out local pixel analysis, obtains boundary distribution, packet
It includes:
Select boundary localized area range；
Screen or remove unreasonable pixel；
To equalize the maximum value minimum of local area as according to calculating boundary position.
Preferably, the boundary localized area range is covering at least one pixel region, the side in line orientations
Boundary's localized area range is no more than the half that background useful information includes pixel in the maximum pixel number along line orientations.
It is preferably, described to screen or remove unreasonable pixel, comprising:
It is whether obvious along lines distribution arrangement equalization local pixel value, or the pixel value that addition filtering algorithm analysis is isolated
Data processing is carried out for independent noise, or the method for using best-fitting of the curve, to screen or remove unreasonable pixel.
Preferably, the line thickness and the method for roughness of calculating includes: normal scatter analytic approach or power spectral density
Analytic approach.
One or more technical solutions provided in the embodiments of the present application have at least the following technical effects or advantages:
In the embodiment of the present application, the method combined using borderline region and local scope, the former passes through along lines side
To handling averagely, line edge pixel distribution curve is obtained, the first borderline region is then determined, to effectively define boundary
Range；The latter obtains boundary distribution by local pixel analysis, to effectively reduce back by the way that reasonable local scope is arranged
Scene element influences, and keeps boundary alignment more accurate.The method of the present invention can be effectively reduced existing method and determine electron beam imaging
Limitation when figure, improves the accuracy and reliability of measurement, and dramatically save engineer's practical time measured and
Cost.
Detailed description of the invention
It, below will be to needed in embodiment description in order to illustrate more clearly of the technical solution in the present embodiment
Attached drawing is briefly described, it should be apparent that, the accompanying drawings in the following description is one embodiment of the present of invention, for this field
For those of ordinary skill, without creative efforts, it is also possible to obtain other drawings based on these drawings.
Fig. 1 is the stream of the measurement method of a kind of electron micrograph image line thickness provided in an embodiment of the present invention and roughness
Cheng Tu；
Fig. 2 is the SEM image in the embodiment of the present invention one and its SEM average gray distribution curve along line orientations.
Fig. 3 is that the line edge distribution that the embodiment of the present invention one is obtained using original fixed pixel threshold measurement method is bent
Line, and the line edge distribution curve obtained using the method for the present invention.
Fig. 4 is that the line thickness roughness power spectral density distribution that the embodiment of the present invention one is obtained using original method is bent
Line, and the line thickness roughness power spectral density distribution curve obtained using this method.
Fig. 5 is the SEM overhead view image comprising double-layer structure in the embodiment of the present invention two and its gray scale along X and Y-direction
Average value distribution curve.
Fig. 6 is that the line edge distribution that the embodiment of the present invention two is obtained using original fixed pixel threshold measurement method is bent
Line, and the line edge distribution curve obtained using the method for the present invention.
Fig. 7 is that the line thickness roughness power spectral density distribution that the embodiment of the present invention two is obtained using original method is bent
Line, and the line thickness roughness power spectral density distribution curve obtained using this method.
Specific embodiment
The embodiment of the present application is solved by providing the measurement method of a kind of electron micrograph image line thickness and roughness
Line thickness and roughness larger workload are measured in the prior art, there are measurement error caused by human intervention and can only be analyzed
The problem of finite number strong point.
The technical solution of the embodiment of the present application is in order to solve the above technical problems, general thought is as follows:
A kind of measurement method of electron micrograph image line thickness and roughness, comprising:
Obtain the scanning electron microscopy picture of linear to be measured；
Intercept first area；
Image in the first area is carried out it is bent to obtain line edge pixel distribution along line orientations handling averagely
Line；
According to the line edge pixel distribution curve, the first borderline region is determined；
Local pixel analysis is carried out to the image in first borderline region, obtains boundary distribution；
It is distributed according to the boundary, calculates the width and roughness of the lines to be measured, extract the width of the lines to be measured
Degree value and roughness value.
By using the method that borderline region and local scope combine, the former by along line orientations handling averagely,
Line edge pixel distribution curve is obtained, the first borderline region is then determined, to effectively define bounds；The latter passes through
Local pixel analysis obtains boundary distribution, to effectively reduce background pixel influence by the way that reasonable local scope is arranged, makes
Boundary alignment is more accurate.The method of the present invention can be effectively reduced limitation of the existing method when determining electron beam imaging figure
Property, the accuracy and reliability of measurement is improved, and dramatically save engineer's practical time measured and cost.
In order to better understand the above technical scheme, in conjunction with appended figures and specific embodiments to upper
Technical solution is stated to be described in detail.
Embodiment one:
The measurement method of a kind of electron micrograph image line thickness and roughness is present embodiments provided, as shown in Figure 1, packet
It includes:
Step 10: obtaining the scanning electron microscopy picture of linear to be measured.
The linear to be measured can be the litho pattern obtained after photoetching process.The photoetching process is
Figure is formed on a photoresist, which is further used for the mask layer of etching.It is described to be also possible to pass through to side linear
Etching technics to obtaining intermediate pattern or targeted graphical after layer to be etched perform etching, it is layer to be etched can for gate material layer,
The material layer of any required etching such as substrate, layer of dielectric material or metal layer, etching technics can be carved for wet etching or photoetching
Erosion.The linear to be measured can be the bargraphs after slice.The linear to be measured can also be progress
The figure for needing to measure line thickness or roughness after other techniques, this is not restricted, and will not enumerate.
Particularly, the background pixel after the electron beam imaging of the scanning electron microscopy picture of linear to be measured is distributed not
Uniformly or background includes other figures.For example, front layer structure graph can be reacted while electron beam is to current layer structure imaging,
To cause electron beam imaging, there are the interference of front layer pattern imaging；Or piece cutting structure is imaged in electron beam, due to different positions
Electron beam imaging pixel is uneven caused by the constraint that the electron beam operational process set is subject to is different, therefore uses traditional measurement
Method can have major defect when measuring line thickness or roughness.
In the present embodiment, linear to be measured is the slice map of deep etching linear, as shown in Fig. 2, along line orientations,
Coordinate position from 1 increase to 100 when, mean value pixel significantly increases.
In addition, after the scanning electron microscopy picture for obtaining linear to be measured, determine horizontal and vertical every
Actual physics length representated by one pixel.
In the present embodiment, the physical length that each the horizontal and vertical pixel determined represents is 1nm.In general, horizontal
To identical with actual physics length representated by longitudinal pixel, but there may be differences for special circumstances.
Step 20: interception first area.
The first area is not comprising any one or more following region: scale, mark and non-interesting region.
Best region selection processing is carried out to original image in general, other tools can be used, it can also be in the step
Appropriate area is flexibly intercepted according to actual needs.Picture shown in the present embodiment have passed through reasonable interval and intercept, removal scale,
The interference regions such as mark.
It can choose to the image in the first area according to practical situation with or without the use of Denoising Algorithm；Such as selection
Using algorithm is removed dryness, Gauss Denoising Algorithm can be used but not limited to, remove the influence of random noise.The present embodiment does not use
Denoising Algorithm.
Step 30: the image in the first area being carried out to obtain line edge picture along line orientations handling averagely
Plain distribution curve.
It is described to refer to and add up all pixels value along line orientations along line orientations handling averagely, then divided by pixel number,
With lines pixel distribution curve of the acquisition after average.The effect of the step is to remove the signal noise generated in measurement process, is obtained
Smooth boundary is taken to be distributed, to determine that basic borderline region provides accurate foundation for next step.Particularly, before for assessment
The influence of layer/background pixel distribution often averages processing along perpendicular to line orientations to underlying pixel data value, obtains background
Pixel distribution curve, as shown in Fig. 2 in the present embodiment.
Step 40: according to the line edge pixel distribution curve, determining the first borderline region.
It is described according to the line edge pixel distribution curve, determine the first borderline region, comprising:
Select the region within the scope of the first extreme value of pixel as basic borderline region；
To the first width of the basic overseas expansion in frontier district, the basic borderline region and first width constitute institute
State the first borderline region.
For example, for the situation of lines distortion, often along the method for lines average treatment pixel extreme value range obtained
Special distortion lines cannot be covered, it is therefore desirable to it is appropriate outward to expand, i.e., to the first width of the basic overseas expansion in frontier district.
Wherein, first extreme value of pixel ranges preferably from pixel extreme value corresponds to width 20%~80%.
It, can also be to described after determining the first borderline region described according to the line edge pixel distribution curve
Line edge pixel distribution curve derivation, obtains the maximum value of slope absolute value, carries out intersection inspection with first borderline region
It looks into, exclusive PCR region, with the accurate bounds of determination.
Step 50: local pixel analysis being carried out to the image in first borderline region, obtains boundary distribution.
The image in first borderline region carries out local pixel analysis, obtains boundary distribution, comprising:
Select boundary localized area range；
Screen or remove unreasonable pixel；
To equalize the maximum value minimum of local area as according to calculating boundary position.
Background pixel, which can be reduced, by local pixel analysis influences, and obtains accurate boundary threshold distribution.
Wherein, the reasonable selection method of boundary localized area range usually requires to take into account background pixel distribution situation.
Less boundary local scope can effectively reduce the influence that smoothing processing finds optimal boundary, but increase
Influence of noise；More boundary local scope can effectively inhibit influence of noise, but strengthen the influence of background pixel simultaneously,
Actual boundary position is set to deviate actual position.
In general, the boundary localized area range is covering at least one pixel region, the side in line orientations
Boundary's localized area range is no more than the half that background useful information includes pixel in the maximum pixel number along line orientations.
It can be by equalizing local pixel value, or the pixel value that addition filtering algorithm analysis is isolated along lines distribution arrangement
It whether is evident as independent noise, or data processing is carried out using the method for best-fitting of the curve, to screen or remove unreasonable picture
Vegetarian refreshments.
To equalize the maximum value minimum of local area as according to calculating boundary position.Wherein, optimal boundary position is calculated
When setting, maximum and minimum after being equalized using local area, boundary threshold are fixed pixel hundred-mark system threshold value.
In the present embodiment, even variation trend is presented along line orientations pixel distribution, therefore local scope is along line orientations
Biggish pixel region, such as 11 pixels that the present embodiment uses be can choose as local treatment region, the side thereby determined that
Boundary's distribution is as shown in Fig. 3 (b).Comparison, the boundary distribution that original method determines is as shown in Fig. 3 (a), it will be apparent that, original method
Real border is deviateed on determining boundary in the Y direction, to cause biggish error in measurement.
Step 60: being distributed according to the boundary, calculate the width and roughness of the lines to be measured, extracted described to survey line
The width numerical value and roughness value of item.
The line thickness and the method for roughness of calculating includes: normal scatter analytic approach or power spectral-density analysis method.
In the present embodiment, the determining boundary of original method is calculated separately using normal scatter method and the method for the present invention is true
The mean breadth on fixed boundary, the two are respectively 31.4 (nanometer or pixels) and 31.2 (nanometer or pixels), the i.e. present invention
The use of method reduces 0.2 (nanometer or pixel) to mean breadth.
In the present embodiment, the lines that original method and the method for the present invention obtain are obtained using power spectral density method respectively
Width roughness power spectral density plot, as shown in figure 4, line thickness roughness can be effectively reduced using the method for the present invention,
The especially power spectral density value of low-frequency range.Width roughness is reduced to the method for the present invention from 3.6 nanometers of original method
1.6 nanometers, greatly improve the accuracy of measurement line thickness and its uniformity range.
Embodiment two:
Embodiment two is identical in most steps as embodiment one, only illustrates difference here.
Step 10: obtaining the scanning electron microscopy picture of linear to be measured.
It is the top view comprising double-layer structure to geodesic structure, as shown in Figure 5, wherein current layer structure in the present embodiment
Electron beam imaging brightness is high, in north and south distribution (distribution up and down)；The electron beam imaging brightness of front layer structure is lower, is distributed in thing
(left and right distribution).Due to the presence of front layer structure, mean pixel distribution difference is up to 40 pixel values.
One pixel of the present embodiment represents 1 nanometer, and Denoising Algorithm is not used.
Step 30: the image in the first area being carried out to obtain line edge picture along line orientations handling averagely
Plain distribution curve.
In the present embodiment, we obtain edge pixel distribution curve of the measurement current layer along line orientations, such as Fig. 5 respectively
Shown in the following figure, which effectively defines the basic borderline region of current layer lines；It is simultaneously assessment
The interference pixel signal intensities of front layer figure layer have carried out averages pixels processing along front layer line orientations, obtain front layer interference
The pixel distribution change curve of signal, as shown in Fig. 5 left figure, it is strong that lines distribution facilitates assessment front layer figure layer interference signal
Degree, and with the optimal localization pixel coverage of this Rational choice.
Step 50: local pixel analysis being carried out to the image in first borderline region, obtains boundary distribution.
In the present embodiment, along current layer line orientations, the electron beam imaging result of front layer structure has stronger influence, because
This identified local scope is answered as small as possible, such as 3 pixels that the present embodiment uses thereby determine that as local treatment region
Boundary distribution as shown in Fig. 6 (b).Comparison, shown in boundary distribution curve such as Fig. 6 (a) that original method determines, it will be apparent that,
In the region Chong Die with front layer structure, the boundary that original method determines obviously is influenced, and lines boundary is expanded to two sides
；There was only slight fluctuation, and not shown large change in the boundary that the method for the present invention determines.
Step 60: being distributed according to the boundary, calculate the width and roughness of the lines to be measured, extracted described to survey line
The width numerical value and roughness value of item.
In the present embodiment, the determining boundary of original method is calculated separately using normal scatter method and the method for the present invention is true
The mean breadth on fixed boundary, the two are respectively 37.6 (nanometer or pixels) and 37.3 (nanometer or pixels).Side of the present invention
The use of method reduces 0.3 (nanometer or pixel) to mean breadth.
In the present embodiment, the lines that original method and the method for the present invention obtain are obtained using power spectral density method respectively
Width roughness power spectral density plot, as shown in fig. 7, the figure is shown, it is wide that lines can be effectively reduced using the method for the present invention
The determining power spectral density plot of roughness, especially original method is spent in 0.02nm-1There is prominent peak value in position, correspond to original
There are the cyclic swings of 50nm for beginning image, consistent along the intensity profile of Y-direction and the boundary distribution curve of Fig. 6 (a) with Fig. 5.
The power in middle low-frequency range is significantly reduced using the border width roughness power spectral density plot that the method for the present invention determines
Spectral density value reduces the interference of front layer structure.Numerically, the width roughness (3 σ) that original method determines is 9.0
Nanometer, and the width roughness (3 σ) that the method for the present invention determines is reduced to 6.5 nanometers.
In particular, it should be pointed out that method of the invention is not limited to the linear width that accurate measurement includes background influence
It, while can be with accurate measurement line edge roughness with the measurement of roughness.
The method of the present invention be applicable not only to si-substrate integrated circuit manufacture in advanced measurement, be also applied for opto-electronic device,
Linear formed in any technical process in SiGe integrated circuit, three-five integrated morphology or mems structure
Interfacial roughness measurement.
The measurement method of accurate Characterization electron micrograph image line thickness and roughness disclosed by the embodiments of the present invention, it is unlimited
The precise measurement to critical size roughness during integrated circuit device research and development and volume production, other are any with one-dimensional square
The optical imagery or electron beam imaging image of device or structure to feature using method provided by the invention and its can prolong
Stretching method is analyzed and is handled.
The measurement method of a kind of electron micrograph image line thickness provided in an embodiment of the present invention and roughness includes at least
Following technical effect:
In the embodiment of the present application, the method combined using borderline region and local scope, the former passes through along lines side
To handling averagely, line edge pixel distribution curve is obtained, the first borderline region is then determined, to effectively define boundary
Range；The latter obtains boundary distribution by local pixel analysis, to effectively reduce back by the way that reasonable local scope is arranged
Scene element influences, and keeps boundary alignment more accurate.The method of the present invention can be effectively reduced existing method and determine electron beam imaging
Limitation when figure, improves the accuracy and reliability of measurement, and dramatically save engineer's practical time measured and
Cost.
It should be noted last that the above specific embodiment is only used to illustrate the technical scheme of the present invention and not to limit it,
Although being described the invention in detail referring to example, those skilled in the art should understand that, it can be to the present invention
Technical solution be modified or replaced equivalently, without departing from the spirit and scope of the technical solution of the present invention, should all cover
In the scope of the claims of the present invention.
Claims (9)
1. a kind of measurement method of electron micrograph image line thickness and roughness characterized by comprising
Obtain the scanning electron microscopy picture of linear to be measured；
First area is intercepted, the first area is that image removes the region after interference region；
Image in the first area is carried out to obtain line along the handling averagely with the grey scale pixel value of lines vertical direction
Edge pixel distribution curve；
According to the line edge pixel distribution curve, the first extreme value range is determined, and then determine the first borderline region；
Local pixel analysis is carried out to the image in first borderline region, obtains boundary distribution；
It is distributed according to the boundary, calculates the width and roughness of the lines to be measured, extract the width number of the lines to be measured
Value and roughness value.
2. the measurement method of electron micrograph image line thickness and roughness according to claim 1, which is characterized in that In
After the scanning electron microscopy picture for obtaining linear to be measured, further includes:
Determine actual physics length representated by each horizontal and vertical pixel.
3. the measurement method of electron micrograph image line thickness and roughness according to claim 1, which is characterized in that institute
Stating first area is not comprising any one or more following region: scale, mark and non-interesting region.
4. the measurement method of electron micrograph image line thickness and roughness according to claim 1, which is characterized in that institute
It states according to the line edge pixel distribution curve, determines the first borderline region, comprising:
Select the region within the scope of the first extreme value of pixel as basic borderline region, pixel the first extreme value range is pixel pole
It is worth the 20%~80% of corresponding width；
To the first width of the basic overseas expansion in frontier district, the basic borderline region and first width constitute described the
One borderline region.
5. the measurement method of electron micrograph image line thickness and roughness according to claim 1, which is characterized in that In
It is described according to the line edge pixel distribution curve, after determining the first borderline region, further includes:
To the line edge pixel distribution curve derivation, the maximum value of slope absolute value is obtained, with first borderline region
Carry out intersection inspection, exclusive PCR region.
6. the measurement method of electron micrograph image line thickness and roughness according to claim 1, which is characterized in that institute
It states and local pixel analysis is carried out to the image in first borderline region, obtain boundary distribution, comprising:
Select boundary localized area range；
Screen or remove unreasonable pixel；
To equalize the maximum value minimum of local area as according to calculating boundary position.
7. the measurement method of electron micrograph image line thickness and roughness according to claim 6, which is characterized in that institute
It states boundary localized area range and is covering at least one pixel region in line orientations, the boundary localized area range is on edge
The maximum pixel number of line orientations is no more than the half that background useful information includes pixel.
8. the measurement method of electron micrograph image line thickness and roughness according to claim 6, which is characterized in that institute
State screening or the unreasonable pixel of removal, comprising:
Local pixel value is equalized along lines distribution arrangement, or is added whether the isolated pixel value of filtering algorithm analysis is evident as solely
Vertical noise, or data processing is carried out using the method for best-fitting of the curve, to screen or remove unreasonable pixel.
9. the measurement method of electron micrograph image line thickness and roughness according to claim 1, which is characterized in that institute
Stating the method for calculating line thickness and roughness includes:
Normal scatter analytic approach or power spectral-density analysis method.
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| CN110553581B (en) * | 2018-06-01 | 2022-01-14 | 华邦电子股份有限公司 | Critical dimension measuring method and image processing device for measuring critical dimension |
| CN110006374B (en) * | 2019-04-28 | 2020-04-07 | 大连理工大学 | CFRP roughness measurement method for obtaining image reference through multidimensional interpolation |
| CN118196101A (en) * | 2024-05-17 | 2024-06-14 | 深圳市旗云智能科技有限公司 | Cable category detection method and detection system based on image processing |
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| CN106352820A (en) * | 2016-08-08 | 2017-01-25 | 中国科学院微电子研究所 | Method and system for measuring roughness of wire |
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| CN105590338A (en) * | 2015-12-07 | 2016-05-18 | 中国科学院微电子研究所 | Three-dimensional reconstruction method of scanning electron microscopic image |
| CN106352820A (en) * | 2016-08-08 | 2017-01-25 | 中国科学院微电子研究所 | Method and system for measuring roughness of wire |
| CN106325005A (en) * | 2016-10-12 | 2017-01-11 | 中国科学院微电子研究所 | Method for measuring photoetching process window |
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