CN107127457B - The integral processing method of cutting polysilicon chip is thinned in a kind of picosecond laser - Google Patents
The integral processing method of cutting polysilicon chip is thinned in a kind of picosecond laser Download PDFInfo
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- CN107127457B CN107127457B CN201710316554.6A CN201710316554A CN107127457B CN 107127457 B CN107127457 B CN 107127457B CN 201710316554 A CN201710316554 A CN 201710316554A CN 107127457 B CN107127457 B CN 107127457B
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K26/00—Working by laser beam, e.g. welding, cutting or boring
- B23K26/36—Removing material
- B23K26/38—Removing material by boring or cutting
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K26/00—Working by laser beam, e.g. welding, cutting or boring
- B23K26/36—Removing material
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K26/00—Working by laser beam, e.g. welding, cutting or boring
- B23K26/36—Removing material
- B23K26/40—Removing material taking account of the properties of the material involved
- B23K26/402—Removing material taking account of the properties of the material involved involving non-metallic material, e.g. isolators
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- Mechanical Engineering (AREA)
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- Mechanical Treatment Of Semiconductor (AREA)
- Dicing (AREA)
Abstract
The integral processing method of cutting polysilicon chip is thinned in a kind of picosecond laser, the fritter for including the following steps: 1, original polysilicon chip being taken to be cut to 20mm × 20mm, initial surface roughness is measured less than 0.4 μm using roughmeter, and the original thickness of silicon wafer is measured using spiral micrometer；2, surface is carried out processing is thinned using a picosecond optical fiber laser setting laser scanning region 15mm × 15mm of pulse width 600ps, the wavelength 193-1064nm of laser, repetition rate 100-1000KHz, output power 1-20W, laser scanning speed 100-500mm/s, scanning times 5-15 times；3, it draws laser cutting contour line and adjusts laser parameter and carry out silicon wafer cutting；4, using the roughness of apparatus measures silicon chip surface, thickness and pattern, the I-V curve of picoammeter test different-thickness silicon wafer is utilized.
Description
Technical field
The present invention relates to a kind of laser of silicon wafer, and cutting integral method is thinned, and cutting is thinned in especially a kind of picosecond laser
The integral processing method of polysilicon chip belongs to semiconductor material field of laser processing.
Background technique
Silicon wafer is widely used in field of semiconductor devices, with electronic product to high-performance, it is multi-functional and miniaturization
The demand driving development of integrated circuit (IC) encapsulation technology, needs to carry out back thinning silicon wafer processing.Silicon chip back side is thinned
There are many kinds of technologies, and such as grinding, polishing, dry type polishing, electrochemical corrosion, wet etching, plasma-assisted chemical are corroded and normal
Press plasma etching etc..It is widely applied currently, the superfine grinding technology of skive is thinned in processing in silicon wafer industry, it should
Technology realizes wafer thinning in silicon chip surface rotation pressure, damage, rupture, removal by grinding wheel.But it can not be kept away in technique
Exempt to introduce damage, reduces device reliability and stability, while superfine grinding thinning technique is faced with high processing quality and height
The conspicuous contradiction of processing efficiency.
With the continuous development of laser processing technology, it is had begun in the industrial production applied to silicon wafer.Utilize optical fiber
Precision laser cutting monocrystalline silicon；Using laser in flexibility and deposition of amorphous silicon films in rigid substrate；Silicon wafer is carried out using laser
Flash annealing；Utilize laser cleaning silicon chip surface sundries；Femtosecond laser scans silicon face induced synthesis micro-structure；On crystal silicon chip
Laser boring etc. be made research or application.
The present invention is directed to this engineering problem of wafer thinning, attempts the thinned cutting that polysilicon chip is carried out using picosecond laser
Integration processing, avoids the surface damage of mechanical grinding, reduces the fragment rate of silicon wafer production, improves processing efficiency and quality,
But also the use of chemical reagent can be reduced, be conducive to the feature of environmental protection for improving silicon wafer production.
Summary of the invention
The object of the present invention is to provide the integral processing methods that cutting polysilicon chip is thinned in a kind of picosecond laser, for biography
Fragment rate height that thining method of uniting generates, surface scratches, the problems such as processing efficiency is low.Using picosecond laser scan silicon chip surface into
Row is thinned.Such as Fig. 1 of laser-processing system used in the present invention, operating process of the invention are as described in Figure 2.
In order to reach the above object, the present invention provides a kind of integration processing of thinned cutting polysilicon chip of picosecond laser
Method, using following technical solution:
Step 1: original polysilicon chip (200 μm of original thickness or so) is taken to be cut to the fritter of 20mm × 20mm, using thick
Rugosity instrument measures initial surface roughness less than 0.4 μm, and the original thickness of silicon wafer is measured using spiral micrometer.
Step 2: picosecond optical fiber laser (model PicoYL-15-0.1) the setting laser using pulse width 600ps is swept
Region 15mm × 15mm is retouched silicon chip surface to be carried out processing, the wavelength 193-1064nm of laser, repetition rate 100- is thinned
1000KHz, output power 1-20W, laser scanning speed 100-500mm/s, scanning times 5-15 times.
Silicon wafer cutting, output power 20W, laser are carried out step 3: drawing laser cutting contour line and adjusting laser parameter
Scanning speed 100mm/s, repetition rate 200KHz, scanning times 10 times, the wavelength 1064nm of laser.
Step 4: the roughness of rear silicon chip surface is thinned using roughmeter measurement laser, rear surface roughness Ra is thinned
Less than 1 μm；The silicon wafer thickness after being thinned is measured using spiral micrometer；Utilize Keyemce three-dimensional confocal microscopy surface
Pattern utilizes the I-V curve of picoammeter test different-thickness silicon wafer.Polysilicon chip laser weakened region and untreated areas are copolymerized
Burnt threedimensional model such as Fig. 3, the I-V curve of different-thickness silicon wafer such as Fig. 4.
Wherein, the processing that silicon wafer is thinned in laser substep, 10-25 μm of laser scanning line spacing are carried out in the second step.Skin
34 μm of spot diameter of second laser, weakened region densification filling.Lead to protective gas argon gas in process.
The positive effect of the present invention are as follows:
(1) cutting silicon wafer integration processing technology is thinned using picosecond laser in this method, substantially increases the processing of silicon wafer
Speed and precision is expected to improve production efficiency in actual production, saves production cost, increases economic efficiency.
(2) 200 μm or so polysilicon chips of original thickness are thinned using picosecond laser in this method, can make its maximum Reducing thickness
Reach 100 μm, it is obvious that effect is thinned.
(3) this method utilizes laser direct writing system, can be by changing picosecond laser parameter such as power, frequency, processing time
Number, scanning speed etc. are accurately controlled, and different Reducing thickness and silicon wafer of different shapes, relatively traditional mechanical reduction can be obtained
Method processes more convenient safety, and the scope of application is also wider.
Detailed description of the invention
Fig. 1 laser-processing system schematic diagram.
Fig. 2 wafer thinning cuts integrated operational flowchart.
Fig. 3 polysilicon chip laser weakened region and untreated areas are copolymerized burnt threedimensional model.
Fig. 4 different-thickness polysilicon chip I-V curve.
Figure label is described as follows:
1 argon gas of picosecond laser, 2 sample, 3 horizontal table 4 is cut by laser contour line 5
Specific embodiment
Implementation process of the invention is explained in detail in 1-4 and specific example with reference to the accompanying drawing.
Embodiment 1:
The sample 3 that step 1. takes polysilicon chip to be cut to 20mm × 20mm measures initial surface roughness using roughmeter
Less than 0.4 μm, horizontal table 4 is placed in using the original thickness that spiral micrometer measures silicon wafer.
Step 2. starts picosecond laser 1 and matched software systems, sets scanning area 15mm × 15mm, optical maser wavelength
193nm.Setting repetition rate 300KHz, power 15W is thinned in the first step, processing times 5 times, 10 μm of laser scanning line spacing, swashs
Optical scanning speed 100mm/s carries out the positioning for being processed sample using feux rouges, starts marking until completing the processing time of setting
Number；Second step, which is thinned, is arranged repetition rate 500KHz, power 10W, and processing times 10 times, 10 μm of laser scanning line spacing, laser
Scanning speed 250mm/s starts marking until completing the processing times of setting；Setting repetition rate 700KHz, function is thinned in third step
Rate 5W processing times 10 times, 10 μm of laser scanning line spacing, laser scanning speed 350mm/s, starts marking until completing setting
Processing times；4th step, which is thinned, is arranged repetition rate 1000KHz, power 1W, and processing times 15 times, laser scanning line spacing 10
μm, laser scanning speed 500mm/s starts marking until completing the processing times of setting.Lead to protective gas argon in process
Gas 2
Step 3., which draws laser cutting contour line 5 and adjusts laser parameter, carries out silicon wafer cutting, output power 20W, laser
Scanning speed 100mm/s, repetition rate 200KHz, scanning times 10 times, the wavelength 1064nm of laser.
The roughness of silicon chip surface, it is small to be thinned rear surface roughness Ra after step 4. is thinned using roughmeter measurement laser
In 1 μm；The silicon wafer thickness after being thinned is measured using spiral micrometer；Utilize Keyemce three-dimensional confocal microscopy surface shape
Looks；Utilize the I-V curve of picoammeter test different-thickness silicon wafer.Polysilicon chip laser weakened region and untreated areas copolymerization are burnt
Threedimensional model such as Fig. 3, the I-V curve of different-thickness silicon wafer such as Fig. 4.
Embodiment 2:
The sample 3 that step 1. takes polysilicon chip to be cut to 20mm × 20mm measures initial surface roughness using roughmeter
Less than 0.4 μm, horizontal table 4 is placed in using the original thickness that spiral micrometer measures silicon wafer.
Step 2. starts picosecond laser and 1 matched software systems, sets scanning area 15mm × 15mm, optical maser wavelength
532nm.Setting repetition rate 500KHz, power 20W is thinned in the first step, processing times 5 times, 15 μm of laser scanning line spacing, swashs
Optical scanning speed 100mm/s carries out the positioning for being processed sample using feux rouges, starts marking until completing the processing time of setting
Number；Second step, which is thinned, is arranged repetition rate 700KHz, power 15W, and processing times 10 times, 15 μm of laser scanning line spacing, laser
Scanning speed 200mm/s starts marking until completing the processing times of setting；Setting repetition rate 900KHz, function is thinned in third step
Rate 10W processing times 10 times, 15 μm of laser scanning line spacing, laser scanning speed 350mm/s, starts marking until completing to set
Fixed processing times；4th step, which is thinned, is arranged repetition rate 1000KHz, power 5W, and processing times 15 times, laser scanning line spacing
15 μm, laser scanning speed 500mm/s, start marking until completing the processing times of setting.Lead to protective gas in process
Argon gas 2.
Step 3., which draws laser cutting contour line 5 and adjusts laser parameter, carries out silicon wafer cutting, output power 20W, laser
Scanning speed 100mm/s, repetition rate 200KHz, scanning times 10 times, the wavelength 1064nm of laser.
The roughness of silicon chip surface, is subtracted using spiral micrometer measurement after step 4. is thinned using roughmeter measurement laser
Silicon wafer thickness after thin tests different-thickness using picoammeter using Keyemce three-dimensional confocal microscopy surface topography
The I-V curve of silicon wafer.Polysilicon chip laser weakened region and untreated areas are copolymerized burnt threedimensional model such as Fig. 3, different-thickness silicon
The I-V curve of piece such as Fig. 4.
Embodiment 3:
The sample 3 that step 1. takes polysilicon chip to be cut to 20mm × 20mm measures initial surface roughness using roughmeter
Less than 0.4 μm, horizontal table 4 is placed in using the original thickness that spiral micrometer measures silicon wafer.
Step 2. starts picosecond laser 1 and matched software systems, sets scanning area 15mm × 15mm, optical maser wavelength
1064nm.Setting repetition rate 100KHz, power 12W is thinned in the first step, processing times 5 times, 25 μm of laser scanning line spacing, swashs
Optical scanning speed 100mm/s carries out the positioning for being processed sample using feux rouges, starts marking until completing the processing time of setting
Number；Setting repetition rate 300KHz, power 9W is thinned in second step, and processing times 10 times, 25 μm of laser scanning line spacing, laser is swept
It retouches speed 250mm/s and starts marking until completing the processing times of setting；Setting repetition rate 500KHz, power is thinned in third step
5W processing times 10 times, 25 μm of laser scanning line spacing, laser scanning speed 350mm/s, starts marking until completing setting
Processing times；4th step, which is thinned, is arranged repetition rate 500KHz, power 1W, and processing times 15 times, 25 μm of laser scanning line spacing,
Laser scanning speed 500mm/s starts marking until completing the processing times of setting.Lead to protective gas argon gas 2 in process.
Step 3., which draws laser cutting contour line 5 and adjusts laser parameter, carries out silicon wafer cutting, output power 20W, laser
Scanning speed 100mm/s, repetition rate 200KHz, scanning times 10 times, the wavelength 1064nm of laser.
The roughness of silicon chip surface, is subtracted using spiral micrometer measurement after step 4. is thinned using roughmeter measurement laser
Silicon wafer thickness after thin tests different-thickness using picoammeter using Keyemce three-dimensional confocal microscopy surface topography
The I-V curve of silicon wafer.Polysilicon chip laser weakened region and untreated areas are copolymerized burnt threedimensional model such as Fig. 3, different-thickness silicon
The I-V curve of piece such as Fig. 4.
Claims (5)
1. the integral processing method that cutting polysilicon chip is thinned in a kind of picosecond laser, which comprises the steps of:
Step 1: taking original polysilicon chip to be cut to the fritter of 20mm × 20mm, and it is coarse to measure initial surface using roughmeter
Degree measures the original thickness of silicon wafer using spiral micrometer less than 0.4 μm；
Step 2: using picosecond optical fiber laser setting laser scanning region 15mm × 15mm of pulse width 600ps to silicon wafer
Surface carries out that processing, the wavelength 193-1064nm of laser, repetition rate 100-1000KHz, output power 1-20W, laser is thinned
Scanning speed 100-500mm/s, scanning times 5-15 times；
Step 3:, which drawing laser cutting contour line, and adjusts laser parameter carries out silicon wafer cutting, output power 20W, laser scanning
Speed 100mm/s, repetition rate 200KHz, scanning times 10 times, the wavelength 1064nm of laser；
Step 4: rear surface roughness Ra is thinned less than 1 in the roughness of silicon chip surface after being thinned using roughmeter measurement laser
μm；The silicon wafer thickness after being thinned is measured using spiral micrometer；Using Keyemce three-dimensional confocal microscopy surface topography,
Utilize the I-V curve of picoammeter test different-thickness silicon wafer.
2. the integral processing method of cutting polysilicon chip, feature is thinned in a kind of picosecond laser according to claim 1
It is: silicon chip surface is carried out in step 2 processing, 10-25 μm of laser scanning line spacing, the spot diameter of picosecond laser is thinned
34 μm, weakened region densification filling.
3. the integral processing method of cutting polysilicon chip, feature is thinned in a kind of picosecond laser according to claim 1
It is: silicon chip surface be thinned in process in step 2 and leads to protective gas argon gas.
4. the integral processing method of cutting polysilicon chip, feature is thinned in a kind of picosecond laser according to claim 1
Be: original polysilicon chip is with a thickness of 200 μm.
5. the integral processing method of cutting polysilicon chip, feature is thinned in a kind of picosecond laser according to claim 1
It is: the model PicoYL-15-0.1 of picosecond optical fiber laser.
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| CN111250874A (en) * | 2020-02-14 | 2020-06-09 | 南京理工大学 | Method for inducing periodic structure on surface of semiconductor material by multi-pulse picosecond laser |
| CN111300167B (en) * | 2020-03-09 | 2021-04-20 | 大连理工大学 | Ultra-precision machining method for thin-wall complex-structure single crystal diamond inertial navigation device |
| CN111360411A (en) * | 2020-03-27 | 2020-07-03 | 湖州中芯半导体科技有限公司 | Method for producing ultrathin CVD diamond |
| CN111390392A (en) * | 2020-04-03 | 2020-07-10 | 北京航空航天大学 | Laser processing technology for polishing semiconductor material |
| CN112548344A (en) * | 2020-11-18 | 2021-03-26 | 南京理工大学 | Efficient clean thinning method applied to silicon carbide ceramic |
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| CN102658424B (en) * | 2012-05-18 | 2015-05-13 | 杭州士兰明芯科技有限公司 | System and method for machining LED (light-emitting diode) substrate by laser |
| CN103474529B (en) * | 2013-10-11 | 2016-05-11 | 聚灿光电科技股份有限公司 | A kind of preparation method of vertical LED chip and vertical LED chip |
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