CN107112382B - A kind of active drive inorganic light-emitting diode display device structure - Google Patents
A kind of active drive inorganic light-emitting diode display device structure Download PDFInfo
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- CN107112382B CN107112382B CN201480084501.0A CN201480084501A CN107112382B CN 107112382 B CN107112382 B CN 107112382B CN 201480084501 A CN201480084501 A CN 201480084501A CN 107112382 B CN107112382 B CN 107112382B
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- 239000004065 semiconductor Substances 0.000 claims description 27
- 239000000758 substrate Substances 0.000 claims description 17
- 230000005611 electricity Effects 0.000 claims description 8
- 238000004070 electrodeposition Methods 0.000 claims description 5
- 230000015572 biosynthetic process Effects 0.000 claims description 2
- 238000010586 diagram Methods 0.000 description 18
- 239000004020 conductor Substances 0.000 description 5
- 238000005516 engineering process Methods 0.000 description 5
- 238000000034 method Methods 0.000 description 4
- 230000003287 optical effect Effects 0.000 description 4
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 239000008358 core component Substances 0.000 description 1
- 239000004973 liquid crystal related substance Substances 0.000 description 1
- 238000004020 luminiscence type Methods 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 230000008092 positive effect Effects 0.000 description 1
- 238000000926 separation method Methods 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
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- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05B—ELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
- H05B33/00—Electroluminescent light sources
- H05B33/12—Light sources with substantially two-dimensional radiating surfaces
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- Microelectronics & Electronic Packaging (AREA)
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Abstract
The invention discloses a kind of active drive inorganic light-emitting diode display device structures, wherein the height and pixel light emission device of public electrode and interconnection electrode join domain are identical as the height of interconnection electrode join domain, the highly identical stress that ensure that interconnection electrode is minimum, it ensure that the stability and electric conductivity of interconnection electrode, which improves the electric conductivity of public electrode.
Description
Technical field
The present invention relates to a kind of active drive inorganic light-emitting diode display device structures, especially raising pixel driver electricity
The inorganic light-emitting diode display device knot of interconnection electrode stability and public electrode electric conductivity between road and pixel light emission device
Structure.
Background technique
Miniscope is the core component of micro projector and wearable display.Current miniscope product is mainly adopted
With two kinds of technologies: liquid crystal over silicon display device (LCOS) and digital optical processing technique (DLP).Both technologies belong to reflection-type
Display technology, light utilization efficiency is very low, and needs using additional optical system, and which adds projectors and nearly eye to show
Volume and cost.A kind of inorganic light-emitting diode display technology occurred recently belongs to active luminescence technology, it is more likely that takes
For existing product.One main distinction of miniscope and ordinary flat panel display is that its effective display area is small, that is, is shown
High resolution, pixel separation is small, and general Pixel Dimensions are at several microns to more than ten microns.With the raising of display resolution, to nothing
The stability of the interconnection electrode of machine light emitting diodde desplay device and the conduction needs of public electrode are higher and higher.
Fig. 1 is the active drive inorganic light-emitting diode display device structural schematic diagram of the prior art.Wherein, pixel light emission
Device includes: substrate 1 where pixel light emission device, N-type inorganic semiconductor layer 2, light-emitting inorganic semiconductor layer 3, p-type is inorganic partly leads
Body layer 4, P-type electrode 5, N-type electrode 6.Pixel-driving circuit device includes: substrate 21, pixel where pixel-driving circuit device
Driving element contacts electrode 22.Further include: the interconnection electrode 23 of pixel light emission device area, the interconnection electrode in public electrode region
24, the height Ha of pixel light emission device and interconnection electrode join domain, the height Hc of public electrode and interconnection electrode join domain.
It will be seen from figure 1 that the height Hc of public electrode and interconnection electrode join domain is less than pixel light emission device and interconnection electrode connects
The height Ha in region is met, these have resulted in the interconnection electrode 23 of pixel light emission device area and the interconnection in public electrode region electricity
Pole 24 influences the stability and electric conductivity of interconnecting electrode there are stress, and then influences the uniformity of display image.
Summary of the invention
The main object of the present invention be improve active drive inorganic light-emitting diode display device pixel-driving circuit and
Interconnection electrode stability and public electrode electric conductivity between pixel light emission device.
Basic principle of the invention is: in pixel light emission device on public electrode position on substrate while retaining P
The p type semiconductor layer of type semiconductor layer and n type semiconductor layer, public electrode position has been connected with n type semiconductor layer by electrode
Come, such public electrode and the height of interconnection electrode join domain and the height of pixel light emission device and interconnection electrode join domain
Identical, the identical stress that ensure that interconnection electrode of height is minimum, ensure that the stability and electric conductivity of interconnection electrode, thus mentions
The high electric conductivity of public electrode.
According to an aspect of the present invention, the public electrode region in pixel light emission device substrate, etched portions p-type half
Conductor layer retains part p type semiconductor layer, is connected by electrode handle p type semiconductor layer and n type semiconductor layer, public in this way
The height and pixel light emission device of common electrode and interconnection electrode join domain are identical as the height of interconnection electrode join domain, public
The risen function of electrode is electronics injecting function.
According to an aspect of the present invention, the public electrode region in pixel light emission device substrate, etched portions N-type half
Conductor layer retains part n type semiconductor layer, is connected by electrode handle p type semiconductor layer and n type semiconductor layer, public in this way
The height and pixel light emission device of common electrode and interconnection electrode join domain are identical as the height of interconnection electrode join domain, public
The risen function of electrode is hole function of injecting.
According to an aspect of the present invention, the insulating layer openings area of public electrode and each interconnecting electrode join domain with
The insulating layer openings area of each pixel light emission device is identical.
According to an aspect of the present invention, the insulating layer openings area of public electrode and each interconnecting electrode join domain with
The insulating layer openings area of each pixel light emission device is different.
According to an aspect of the present invention, the interconnection of each interconnection electrode on public electrode and each pixel light emission device
Electrode area is identical.
According to an aspect of the present invention, the interconnection of each interconnection electrode on public electrode and each pixel light emission device
Electrode area is different.
According to an aspect of the present invention, there is all closed public electrode leads in each pixel light emission device.
According to an aspect of the present invention, there are partially enclosed public electrode leads for each pixel light emission device.
According to an aspect of the present invention, there are dummy pixels around effective display area domain.
According to an aspect of the present invention, the interconnection electrode in public electrode region is formed close-shaped.
The positive effect of the present invention is:
1. in pixel light emission device retain p type semiconductor layer and N-type half simultaneously on public electrode position on substrate
Conductor layer, and the p type semiconductor layer of public electrode position and n type semiconductor layer are connected by electrode, ensure that public
The height and pixel light emission device of electrode and interconnection electrode join domain are identical as the height of interconnection electrode join domain, height phase
With ensure that the stress that interconnection electrode is born is minimum, the stability of interconnection electrode ensure that.
2. the height and pixel light emission device of public electrode and interconnection electrode join domain and interconnection electrode join domain
It is highly identical, it is ensured that signal is transferred on public electrode from substrate where pixel-driving circuit by interconnection electrode, is improved
Conductivity uniformity, and then improve the uniformity of display image.
Detailed description of the invention
Fig. 1 is the active drive inorganic light-emitting diode display device structural schematic diagram of the prior art.
Fig. 2 is active drive inorganic light-emitting diode display device structural schematic diagram of the invention.Wherein, public electrode rises
Electronics injecting function.
Fig. 3 is active drive inorganic light-emitting diode display device structural schematic diagram of the invention.Wherein, public electrode rises
Hole function of injecting.
Fig. 4 is a kind of active drive inorganic light-emitting diode display device structural schematic diagram of the invention.Wherein, common electrical
Each interconnection electrode on extremely is identical as the interconnection electrode area of each pixel light emission device.
Fig. 5 is a kind of active drive inorganic light-emitting diode display device structural schematic diagram of the invention.Wherein, common electrical
Each interconnection electrode on extremely is not identical as the interconnection electrode area of each pixel light emission device.
Fig. 6 is a kind of active drive inorganic light-emitting diode display device structural schematic diagram of the invention.Wherein, common electrical
The insulating layer openings area of pole is identical as the insulating layer openings area of each pixel light emission device.
Fig. 7 is a kind of active drive inorganic light-emitting diode display device structural schematic diagram of the invention.Wherein, common electrical
The insulating layer openings area of pole is not identical as the insulating layer openings area of each pixel light emission device.
Fig. 8 is a kind of pixel light emission device portions signal of active drive inorganic light-emitting diode display device of the invention
Figure.Wherein, there are partially enclosed public electrode leads for each pixel light emission device.
Fig. 9 is the pixel light emission device and interconnection electricity of a kind of active drive inorganic light-emitting diode display device of the invention
Pole partial schematic diagram.Wherein, there are dummy pixels around effective display area domain.
Figure 10 is pixel light emission device and the interconnection of a kind of active drive inorganic light-emitting diode display device of the invention
Electrode section schematic diagram.Wherein, the interconnection electrode in public electrode region is formed close-shaped.
Specific embodiment
A specific embodiment of the invention is described with reference to the accompanying drawing.
Embodiment one
Fig. 2 is active drive inorganic light-emitting diode display device structural schematic diagram of the invention.Wherein, public electrode rises
Electronics injecting function.Wherein, pixel light emission device includes: substrate 1 where pixel light emission device, N-type inorganic semiconductor layer 2, hair
Light inorganic semiconductor layer 3, p-type inorganic semiconductor layer 4, P-type electrode 5, N-type electrode 6.Pixel-driving circuit device includes: pixel
Substrate 21, pixel driver device contact electrode 22 where driving circuit device.Further include: the interconnection electricity of pixel light emission device area
Pole 23, the interconnection electrode 24 in public electrode region, the height Ha of pixel light emission device and interconnection electrode join domain, public electrode
With the height Hc of interconnection electrode join domain.Figure it is seen that the height Hc etc. of public electrode and interconnection electrode join domain
In the height Ha of pixel light emission device and interconnection electrode join domain, this just farthest reduces pixel light emission device area
Interconnection electrode 23 and public electrode region interconnection electrode 24 stress, improve the stability and electrical conductance of interconnecting electrode, into
And increase the uniformity of display image.
Embodiment two
Fig. 3 is active drive inorganic light-emitting diode display device structural schematic diagram of the invention.With the area of embodiment one
It is not that public electrode plays hole function of injecting.
Embodiment three
Fig. 4 is a kind of active drive inorganic light-emitting diode display device structural schematic diagram of the invention.Wherein, pixel is sent out
Optical device includes: substrate 1, N-type inorganic semiconductor layer 2, light-emitting inorganic semiconductor layer 3, p-type where pixel light emission device inorganic half
Conductor layer 4, P-type electrode 5, N-type electrode 6.Pixel-driving circuit device include: substrate 21 where pixel-driving circuit device, as
Plain driving element contacts electrode 22.Further include: the interconnection electrode 23 of pixel light emission device area, the interconnection electricity in public electrode region
Pole 24, the interconnection electrode area B a of each pixel light emission device, each interconnection electrode area B c on public electrode.Public electrode
On each interconnection electrode area B c it is identical as the interconnection electrode area B a of each pixel light emission device.
Example IV
Fig. 5 is a kind of active drive inorganic light-emitting diode display device structural schematic diagram of the invention.With embodiment three
Difference be each interconnection electrode area B c on public electrode and the interconnection electrode area B a of each pixel light emission device not phase
Together.
Embodiment five
Fig. 6 is a kind of active drive inorganic light-emitting diode display device structural schematic diagram of the invention.Wherein, pixel is sent out
Optical device includes: substrate 1, N-type inorganic semiconductor layer 2, light-emitting inorganic semiconductor layer 3, p-type where pixel light emission device inorganic half
Conductor layer 4, P-type electrode 5, N-type electrode 6.Pixel-driving circuit device include: substrate 21 where pixel-driving circuit device, as
Plain driving element contacts electrode 22.Further include: the interconnection electrode 23 of pixel light emission device area, the interconnection electricity in public electrode region
Pole 24, the insulating layer openings area Ia of each pixel light emission device, the insulating layer openings area Ic of public electrode.Public electrode with
The insulating layer openings area Ia phase of the insulating layer openings area Ic of each interconnection electrode join domain and each pixel light emission device
Together.
Embodiment six
Fig. 7 is a kind of active drive inorganic light-emitting diode display device structural schematic diagram of the invention.With embodiment five
Difference be public electrode and each interconnection electrode join domain insulating layer openings area Ic and each pixel light emission device
Insulating layer openings area Ia is not identical.
Embodiment seven
Fig. 8 is a kind of pixel light emission device portions signal of active drive inorganic light-emitting diode display device of the invention
Figure.It include: N-type inorganic semiconductor layer 2, P-type electrode 5, N-type electrode 6, public electrode lead 10, wherein N-type electrode 6 is as public
Common electrode, there are partially enclosed public electrode leads 10 for each pixel light emission device, it is ensured that the uniformity of public electrode.
Embodiment eight
Fig. 9 is the pixel light emission device and interconnection electricity of a kind of active drive inorganic light-emitting diode display device of the invention
Pole partial schematic diagram.It include: N-type inorganic semiconductor layer 2, P-type electrode 5, N-type electrode 6, the P-type electrode of dummy pixel 11, pixel
The interconnection of the interconnection electrode 23 in luminescent device region, the interconnection electrode 24 in public electrode region, dummy pixel (dummy pixel)
Electrode 25.It can be seen from the figure that 36 pixel light emission device composition display effective display area domains, and dummy pixel can be reduced
The inhomogeneities of technique in device fabrication processes, guarantees the uniformity of effective display area domain.
Embodiment nine
Figure 10 is pixel light emission device and the interconnection of a kind of active drive inorganic light-emitting diode display device of the invention
Electrode section schematic diagram.It include: the interconnection of N-type inorganic semiconductor layer 2, P-type electrode 5, N-type electrode 6, pixel light emission device area
Electrode 23, public electrode region interconnection electrode 24.It can be seen from the figure that the formation of interconnection electrode 24 in public electrode region is closed
Close shape.
It is described above in relation to the preferred embodiment of the present invention, it should be appreciated by those skilled in the art that not taking off
Variations and modifications can be carried out on scope from spirit and claims of the present invention book.
Claims (8)
1. a kind of active drive inorganic light-emitting diode display device structure, including multiple pixel-driving circuit devices and multiple pictures
Plain luminescent device, pixel-driving circuit device and pixel light emission device are located at various substrates, and each pixel-driving circuit device is logical
Crossing interconnection electrode may be implemented independent control to each pixel light emission device, which is characterized in where pixel light emission device
Substrate on, each pixel light emission device of height and effective display area and interconnection electricity of public electrode and interconnection electrode join domain
The height of pole join domain is identical；
Highly identical is relative to substrate where pixel light emission device；
On the substrate where pixel light emission device, the p type semiconductor layer and n type semiconductor layer of public electrode position pass through electrode
Formation is electrically connected.
2. active drive inorganic light-emitting diode display device structure according to claim 1, which is characterized in that public electrode
Risen function is electronics injecting function.
3. active drive inorganic light-emitting diode display device structure according to claim 1, which is characterized in that public electrode
Risen function is hole function of injecting.
4. any one of -3 active drive inorganic light-emitting diode display device structure according to claim 1, which is characterized in that
The insulating layer openings of the insulating layer openings area and each pixel light emission device of public electrode and each interconnection electrode join domain
Area is identical.
5. any one of -3 active drive inorganic light-emitting diode display device structure according to claim 1, which is characterized in that
Each interconnection electrode on public electrode is identical as the interconnection electrode area of each pixel light emission device.
6. any one of -3 active drive inorganic light-emitting diode display device structure according to claim 1, which is characterized in that
Each interconnection electrode on public electrode is different from the interconnection electrode area of each pixel light emission device.
7. any one of -3 active drive inorganic light-emitting diode display device structure according to claim 1, which is characterized in that
There are complete closure or the public electrode leads of part closure for each pixel light emission device.
8. any one of -3 active drive inorganic light-emitting diode display device structure according to claim 1, which is characterized in that
There are dummy pixels around the effective display area domain be made of pixel light emission device.
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| PCT/CN2014/001191 WO2016106472A1 (en) | 2014-12-30 | 2014-12-30 | Actively-driven inorganic light-emitting diode display component structure |
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| Publication Number | Publication Date |
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| CN107112382A CN107112382A (en) | 2017-08-29 |
| CN107112382B true CN107112382B (en) | 2019-04-26 |
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| CN201480084501.0A Active CN107112382B (en) | 2014-12-30 | 2014-12-30 | A kind of active drive inorganic light-emitting diode display device structure |
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Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1499909A (en) * | 2002-10-29 | 2004-05-26 | Lg.������Lcd��ʽ���� | Double-panel organic electroluminescent displaying device and its mfg. method |
| CN1638577A (en) * | 2003-12-26 | 2005-07-13 | Lg.菲利浦Lcd株式会社 | Organic electro-luminescence display and fabricating method thereof |
| CN1638556A (en) * | 2003-12-30 | 2005-07-13 | Lg.菲利浦Lcd株式会社 | Dual panel type organic electroluminescent device and method for fabricating the same |
| CN1638548A (en) * | 2003-12-29 | 2005-07-13 | Lg.菲利浦Lcd株式会社 | Organic electroluminescent display device and method of fabricating the same |
| CN1638551A (en) * | 2003-12-30 | 2005-07-13 | Lg.菲利浦Lcd株式会社 | Dual panel type organic electroluminescent device and method of fabricating the same |
| KR20080000300A (en) * | 2006-06-27 | 2008-01-02 | 엘지.필립스 엘시디 주식회사 | Organic electroluminescent device and method of fabricating the same |
Family Cites Families (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR100464864B1 (en) * | 2002-04-25 | 2005-01-06 | 엘지.필립스 엘시디 주식회사 | Organic Electroluminescent Device and Method for Fabricating the same |
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2014
- 2014-12-30 CN CN201480084501.0A patent/CN107112382B/en active Active
- 2014-12-30 WO PCT/CN2014/001191 patent/WO2016106472A1/en active Application Filing
Patent Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1499909A (en) * | 2002-10-29 | 2004-05-26 | Lg.������Lcd��ʽ���� | Double-panel organic electroluminescent displaying device and its mfg. method |
| CN1638577A (en) * | 2003-12-26 | 2005-07-13 | Lg.菲利浦Lcd株式会社 | Organic electro-luminescence display and fabricating method thereof |
| CN1638548A (en) * | 2003-12-29 | 2005-07-13 | Lg.菲利浦Lcd株式会社 | Organic electroluminescent display device and method of fabricating the same |
| CN1638556A (en) * | 2003-12-30 | 2005-07-13 | Lg.菲利浦Lcd株式会社 | Dual panel type organic electroluminescent device and method for fabricating the same |
| CN1638551A (en) * | 2003-12-30 | 2005-07-13 | Lg.菲利浦Lcd株式会社 | Dual panel type organic electroluminescent device and method of fabricating the same |
| KR20080000300A (en) * | 2006-06-27 | 2008-01-02 | 엘지.필립스 엘시디 주식회사 | Organic electroluminescent device and method of fabricating the same |
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| Publication number | Publication date |
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| CN107112382A (en) | 2017-08-29 |
| WO2016106472A1 (en) | 2016-07-07 |
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Address after: 264006 414, Zhujianglu Road 2, Zhujianglu Road Development Zone, Yantai, Shandong. Applicant after: Sun Runguang Applicant after: Liu Hongyu Address before: Room 102, floor 475, 23 building, Tacheng Road, Jiading District, Shanghai Applicant before: Sun Runguang Applicant before: Liu Hongyu |
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Effective date of registration: 20200728 Address after: Room b1-83, 2 / F, block B, Weizong space, Huigu Industrial Park, 899 Xuefu Avenue, Honggutan New District, Nanchang City, Jiangxi Province Patentee after: Nanchang Ningjia Electronic Technology Co.,Ltd. Address before: 264006 414, Zhujianglu Road 2, Zhujianglu Road Development Zone, Yantai, Shandong. Co-patentee before: Liu Hongyu Patentee before: Sun Runguang |