CN107104098A - light sensing device - Google Patents

Abstract

The invention relates to a light sensing device, which comprises a first substrate, a light emitting diode, a light sensing unit and an active element electrically connected with the light sensing unit.

Description

light sensing device

This application is a divisional application, and the application number of its parent case is: 201610124463.8; the application date is: March 4, 2016; the applicant is: AU Optronics Co., Ltd.; the invention name is: optical sensing device.

technical field

The present invention relates to a sensing device, and in particular to a light sensing device.

Background technique

Generally speaking, the photo-sensing device includes a photo-sensing panel and a backlight module mounted outside the photo-sensing panel. The backlight module is used for emitting light beams. The light sensing panel is arranged on the transmission path of the light beam. The photosensitive panel includes a first substrate, a plurality of photosensitive units arrayed on the first substrate, and a plurality of active components. Multiple active components are electrically connected with multiple photosensitive units to read signals received by the photosensitive units.

There are many ways to apply the light sensing device. Taking fingerprint scanning as an example, when the user’s finger touches the light sensing device, the peaks and troughs of the fingerprint will reflect light beams with different intensities, so that the multiple light sensors corresponding to the peaks and troughs respectively The unit receives reflected beams of varying intensities. In this way, the light sensing device can obtain the fingerprint image of the user. In order to collimate the light beam through the light sensing panel and improve the performance of the light sensing device, the backlight module needs to use multiple prism sheets. However, this is not conducive to reducing the cost of the photo-sensing device, and it is not easy to reduce the thickness of the photo-sensing device. In addition, although the backlight module has adopted a prism sheet, part of the light beam emitted by the backlight module will still be transmitted to the photosensitive unit, causing the problem of signal interference.

Contents of the invention

The technical problem to be solved by the present invention is to provide a photo-sensing device with good performance for the above-mentioned defects of the prior art.

In order to achieve the above object, the present invention provides a light sensing device, which includes a first substrate, a first reflective layer, a light emitting diode, a first insulating layer, a second reflective layer, a photosensitive unit and an active sensor electrically connected to the photosensitive unit. element. The first reflection layer covers the first substrate. The light emitting diode is located on the first reflective layer. The first insulating layer covers the first reflective layer and the light emitting diode. The second reflective layer is disposed on the first insulating layer and located right above the light emitting diode. The light beam emitted by the light-emitting diode is reflected by the first reflective layer and the second reflective layer, and then emerges from the side of the photosensitive unit.

In order to better achieve the above object, the present invention also provides a light sensing device, including a first substrate, an active element, a light sensing unit, a light emitting diode and a light blocking structure. The active element is configured on the first substrate. The photosensitive unit is configured on the first substrate and electrically connected with the active element. The photosensitive unit includes a first photosensitive electrode, a second photosensitive electrode opposite to the first photosensitive electrode, and a photosensitive layer. The photosensitive layer is sandwiched between the first photosensitive electrode and the second photosensitive electrode. The first photosensitive electrode is located between the photosensitive layer and the first substrate. The light emitting diode is arranged on the first substrate and is located beside the photosensitive unit. The light blocking structure is substantially on the same plane as the photosensitive unit and the light emitting diode, and is located on both sides of the photosensitive unit.

In order to better achieve the above object, the present invention also provides a light sensing device, comprising a first substrate, a first active element, a first insulating layer, a reflective electrode, a light emitting diode, a second insulating layer and a photosensitive unit. The first substrate has a carrying surface. The first active element is configured on the bearing surface of the first substrate. The first insulating layer covers the first active element and has a first opening. The first insulating layer has sidewalls defining a first opening. The reflective electrode is located in the first opening and at least covers the sidewall. The light emitting diode is disposed in the first opening. A reflective electrode surrounds the light emitting diode. The photosensitive unit is configured on the second insulating layer. The photosensitive unit includes a first photosensitive electrode. The first photosensitive electrode is disposed on the second insulating layer and does not vertically overlap with the light emitting diode. The vertical direction is parallel to the normal direction of the bearing surface.

Technical effect of the present invention is:

Based on the above, in the light-sensing device according to an embodiment of the present invention, the light-emitting diodes are built in the light-sensing panel to which the light-sensing unit belongs, so the backlight module does not need to be additionally arranged outside the light-sensing panel, so that The overall thickness of the measuring device can be reduced. In addition, since the light-emitting diode is arranged between the first and second reflective layers and the photosensitive unit is arranged above the second reflective layer, the light beam emitted by the light-emitting diode will pass through the photosensitive unit after being reflected by the first and second reflective layers. The photosensitive device is not easy to enter the photosensitive layer of the photosensitive unit by mistake. In this way, the signal interference problem caused by the backlight module installed outside the light sensing panel can be improved.

In the photo-sensing device according to another embodiment of the present invention, in addition to the fact that the light-emitting diode is built into the photo-sensing panel to which the photo-sensing unit belongs, the overall thickness of the photo-sensing device can be reduced, and the light-blocking Structured on both sides of the light-emitting diode, the light beam emitted by the light-emitting diode will be blocked by the light-shielding structure, and will not easily enter the photosensitive layer of the photosensitive unit by mistake. In this way, the signal interference problem caused by the backlight module installed outside the light sensing panel can be improved.

In the photo-sensing device according to another embodiment of the present invention, in addition to the fact that the light-emitting diode is built into the photo-sensing panel to which the photo-sensing unit belongs, the overall thickness of the photo-sensing device can be reduced. The reflective layer of the diode can concentrate the light beam emitted by the light-emitting diode toward the front view direction. Thereby, when the light sensing device detects an object, the light beam reflected by the object can enter the corresponding light sensing unit at a relatively small reflection angle. In this way, the sharpness of the object image detected by the light sensing device can be improved, so as to obtain a clear object image.

The present invention will be described in detail below in conjunction with the accompanying drawings and specific embodiments, but not as a limitation of the present invention.

Description of drawings

1A to 1F are schematic cross-sectional views of the manufacturing process of a light sensing device according to an embodiment of the present invention;

2 is a schematic cross-sectional view of an optical sensing device according to another embodiment of the present invention;

3 is a schematic cross-sectional view of a light sensing device according to another embodiment of the present invention;

4A to 4F are cross-sectional schematic diagrams of the manufacturing process of a photo-sensing device according to yet another embodiment of the present invention;

5 is a schematic cross-sectional view of an optical sensing device according to an embodiment of the present invention;

FIG. 6 is a schematic cross-sectional view of a light sensing device according to another embodiment of the present invention.

Among them, reference signs

110, 310, 510 first substrate

120, 120A, 120B first reflective layer

130, 130A, 130B LEDs

132, 134, 352, 354 electrodes

136 Luminescent layer

140, 160, 330, 520 First insulating layer

180, 370, 410, 592 insulation

142, 182, 372, 382, 412, 592a opening

150 second reflective layer

170, 364, 560: the first photosensitive electrode

200, 420, 570 Second photosensitive electrode

190, 400, 580 photosensitive layer

210, 430, 590 protective layers

220, 340 sticky body

310a surface

320, 360 conductive layer

322 blackout patterns

332 contact hole

350, 540 LEDs

350a top surface

362 line pattern

380 light blocking structure

380a inner edge

380b outer edge

380c Bottom

380d top surface

390 reflective layer

400a contact surface

510a bearing surface

522 First opening

524 side wall

526 Second opening

530 reflective electrode

532 conductive pattern

540a point

550 Second insulating layer

550A: Second insulating layer (second substrate)

552 Third opening

1000, 1000A, 1000B, 2000, 3000, 3000A light sensing device

CH, CH1, CH2 channel layer

D, D1, D2 drain

d Inner diameter

F object

GI gate insulating layer

G, G1, G2 Gate

h1, h2, h3, H1, H2 distance

L, L1, L2, L3 beams

PD photosensitive unit

S, S1, S2 source

T, T1, T2 active components

W width

x horizontal direction

y vertical direction

detailed description

Below in conjunction with accompanying drawing, structural principle and working principle of the present invention are specifically described:

1A to 1F are schematic cross-sectional views of the manufacturing process of the light sensing device according to an embodiment of the present invention. Please refer to FIG. 1A , firstly, a first substrate 110 is provided. The first substrate 110 may be a light-transmitting first substrate or an opaque/reflective first substrate. For example, the material of the light-transmitting first substrate can be glass, quartz, plastic or other suitable materials, and the material of the opaque/reflective first substrate can be wafer, ceramics or other suitable materials, but the present invention does not limit. Next, a first reflective layer 120 is formed to cover the first substrate 110 . In this embodiment, the first reflective layer 120 can be a conductive material, such as: metal, alloy, nitride of metal material, oxide of metal material, oxynitride of metal material, or other opaque conductive material, or A stacked layer of the aforementioned at least two materials, but the present invention is not limited thereto.

Next, the LED 130 is disposed on the first reflective layer 120 . In this embodiment, the LED 130 can be a vertical chip. In other words, the first and second electrodes 132 and 134 of the light emitting diode 130 can be respectively located on different sides of the light emitting layer 136 . However, the present invention is not limited thereto. In other embodiments, the light emitting diode can also be a horizontal chip, that is, the first and second electrodes 132 and 134 are located on the same side of the light emitting layer 136 , or other suitable types of chips. The material of the light-emitting layer 136 includes a first-type semiconductor layer, an active layer and a second-type semiconductor layer, wherein the first-type semiconductor layer is, for example, a P-type semiconductor, and the second-type semiconductor layer is, for example, an N-type semiconductor. In other embodiments, the material of the light-emitting layer 136 may also include a first-type semiconductor layer and a second-type semiconductor layer, and the first-type semiconductor layer and the second semiconductor layer have different polarities, or other suitable materials. Next, a first insulating layer 140 is formed to cover the first reflective layer 120 and the LED 130 . In this embodiment, the material of the first insulating layer 140 can be an inorganic material (such as silicon oxide, silicon nitride, silicon oxynitride, or a stacked layer of at least two of the above materials), an organic material, or a combination thereof.

Referring to FIG. 1B , next, in this embodiment, the first insulating layer 140 may be selectively patterned so that the first insulating layer 140 has an opening 142 . In this embodiment, the opening 142 exposes the second electrode 134 of the light emitting diode 130, the vertical projected area of the opening 142 and the vertical projected area of the second electrode 134 of the light emitting diode 130 basically do not limit the relationship between the two, as long as The opening 142 overlaps at least a portion of the second electrode 134 of the LED 130 . In this embodiment, for the tolerance of the subsequent process, the opening 142 of the first insulating layer 140 can expose the second electrode 134 of the light-emitting diode 130 and the first insulating layer near it, that is, the vertical projected area of the opening 142 is larger than that of the light-emitting diode. The vertical projected area of the second electrode 134 of the light emitting diode 130, and the opening 142 overlaps with at least a part of the second electrode 134 of the LED 130, but is not limited thereto. Referring to FIG. 1C , next, the second reflective layer 150 and the gate G are formed. The second reflective layer 150 and the gate G are disposed on the first insulating layer 140 . In this embodiment, the gate G is separated from the second reflective layer 150 and the vertical projection of the gate G on the first substrate 110 does not overlap with the LED 130 . In the vertical direction y, the second reflective layer 150 shields the LED 130 . In this embodiment, the first reflective layer 120 may exceed the edge of the second reflective layer 150 . In other words, the orthographic projection of the edge of the second reflective layer 150 on the first substrate 110 may be completely within the area of the first reflective layer 120 , but the invention is not limited thereto. In the present invention, the vertical direction y is perpendicular to the surface of the first substrate 110 . The horizontal direction x is parallel to the surface of the first substrate 110 , and the vertical direction y and the horizontal direction x are perpendicular to each other. Specifically, the angle between the vertical direction y and the horizontal direction x is 90 degrees.

In this embodiment, the second reflective layer 150 can fill the opening 142 of the first insulating layer 140 to be connected to the second electrode 134 of the LED 130 . In this embodiment, for the flatness of the subsequent process, the second reflective layer 150 is only located in the opening 142 , but it is not limited thereto. In other embodiments, the second reflective layer 150 may also extend beyond the edge of the opening 142 to cover the first insulating layer 140 near the opening 142 . The first electrode 132 of the light emitting diode 130 may be connected to the first reflective layer 120 . In other words, in this embodiment, in addition to the first and second reflective layers 120 and 150 being used to reflect the light beam emitted by the light emitting diode 130, part of the first and second reflective layers 120 and 150 can also be used as the driving circuit of the light emitting diode 130 . This helps to simplify the structure of the light sensing device. However, the present invention is not limited thereto. In other embodiments, the light emitting diode 130 may also be selectively not electrically connected to the first reflective layer 120 , the second reflective layer 150 or a combination thereof.

Referring to FIG. 1D , next, a gate insulating layer 160 is formed to cover the gate G and the second reflective layer 150 . In this embodiment, the material of the gate insulating layer 160 can be an inorganic material (such as silicon oxide, silicon nitride, silicon oxynitride, or a stacked layer of at least two of the above materials), an organic material, or a combination thereof. Next, a channel layer CH is formed on the gate insulating layer 160 . The channel layer CH is disposed above the gate G. In this embodiment, the channel layer CH can be a single-layer or multi-layer structure, which includes amorphous silicon, polycrystalline silicon, microcrystalline silicon, single crystal silicon, organic semiconductor materials, oxide semiconductor materials (for example: indium zinc oxide, InGeZnO, or other suitable materials, or the above combinations), or other suitable materials, or containing dopant in the above materials, or the above combinations.

Referring to FIG. 1D , next, the source S, the drain D and the first photosensitive electrode 170 are formed. The first photosensitive electrode 170 , the source S and the drain D are located in the same film layer. The source S and the drain D are located on the channel layer CH and part of the gate insulating layer 160 , and are electrically connected to two sides of the channel layer CH respectively. The first photosensitive electrode 170 is electrically connected to one of the source S and the drain D (for example: the drain D), that is, the first photosensitive electrode 170 and the electrode (one of the source or the drain) connected to it can be simultaneously As the electrode in the active element and the electrode in the photosensitive unit PD. The source S, the drain D, the channel layer CH and the gate G constitute the active element T. The source S, the drain D and the first photosensitive electrode 170 are conductive materials. For example, in this embodiment, the material of the source S, the drain D, and the first photosensitive electrode 170 can be metal, alloy, nitride of metal material, oxide of metal material, oxynitride of metal material, Or other conductive materials, or stacked layers of at least two of the aforementioned materials.

Referring to FIG. 1E , next, an insulating layer 180 is formed. The insulating layer 180 covers the source S, the drain D and part of the insulating layer 170 and has an opening 182 . The opening 182 exposes the first photosensitive electrode 170 . The material of the insulating layer 180 can be an inorganic material (such as silicon oxide, silicon nitride, silicon oxynitride, or a stacked layer of at least two of the above materials), an organic material, or a combination thereof. Next, a photosensitive layer 190 is formed. The photosensitive layer 190 is disposed on the first photosensitive electrode 170 . The photosensitive layer 190 fills the opening 182 of the insulating layer 180 and is electrically connected to the first photosensitive electrode 170 . In this embodiment, the photosensitive layer 190 is mainly made of silicon, such as SivOw, where v and w are not zero. The photosensitive layer 190 includes, for example, a first-type semiconductor material layer, an intrinsic semiconductor material layer, and a second-type semiconductor material layer stacked in sequence, and one of the first-type semiconductor material layer and the second-type semiconductor material layer is One is a p-type semiconductor material, and the other is an n-type semiconductor material. However, the present invention is not limited thereto. In other embodiments, the material of the photosensitive layer 190 may also be a first-type semiconductor material layer and a second-type semiconductor material layer stacked in sequence, and the first-type semiconductor material layer and The polarity of the second-type semiconductor material layer is different, or the first-type semiconductor material layer and the intrinsic semiconductor material layer, or other suitable materials. Next, the second photosensitive electrode 200 is formed on the photosensitive layer 190 . The second photosensitive electrode 200 is disposed on the photosensitive layer 190 and is electrically connected to the photosensitive layer 190 . In this embodiment, the second photosensitive electrode 200 exposes a part of the insulating layer 180 , that is, the second photosensitive electrode 200 does not overlap with the gate G, the source S and the channel CH, but it is not limited thereto.

The first photosensitive electrode 170 , the photosensitive layer 190 and the second photosensitive electrode 200 constitute a photosensitive unit PD. The active element T is electrically connected to the photosensitive unit PD. The photosensitive unit PD is located right above the second reflective layer 150 . The second photosensitive electrode 200 is a light-transmitting conductive pattern. In this embodiment, the material of the second photosensitive electrode 200 can be selected from indium tin oxide, indium zinc oxide, aluminum tin oxide, aluminum zinc oxide, indium germanium zinc oxide, graphene, nano silver, carbon nano tube /rod, or other suitable materials, or a stack of at least two of the above. Referring to FIG. 1F , next, a protective layer 210 is formed to cover all components below the protective layer 210 , such as the active device T, the photosensitive unit PD, and the like. In this embodiment, the material of the protection layer 210 can be an inorganic material (such as silicon oxide, silicon nitride, silicon oxynitride, or a stacked layer of at least two of the above materials), an organic material, or a combination thereof.

Please refer to FIG. 1F, the light beams L1, L2, and L3 emitted by the light emitting diode 130 will be reflected by at least one of the first reflective layer 120 and the second reflective layer 150 or the first and second reflective layers 120, 150 and the grid G, and then pass through the photosensitive The unit PD is shot next to it. In detail, the light beam L1 can be firstly reflected by the second reflective layer 150 to the first reflective layer 120, and then reflected by the first reflective layer 120 to pass through the light sensing device 1000 from the side of the second reflective layer 150; the light beam L2 The light beam L3 can be reflected by the first reflective layer 120 first and then pass through the light sensing device 1000 directly from the side of the second reflective layer 150; The reflective layer 120 reflects, and then passes out of the light sensing device 1000 from the side of the active device T. After the light beams L1, L2, L3 pass through the light sensing device 1000, they can be reflected by the user's finger or object to the corresponding photosensitive unit PD, and the corresponding photosensitive unit PD can receive the light beam L1, reflected by the user's finger or object. L2 and L3 , so that the light sensing device 1000 obtains the user's finger or object image or its touch position.

Since the light-emitting diode 130 and the photosensitive unit PD are located on the same first substrate 110, that is, the light-emitting diode 130 is built in the light-sensing panel to which the photosensitive unit PD belongs, therefore, the light-sensing device 1000 may not include The backlight module outside the measuring panel, so that the thickness of the light sensing device 1000 can be greatly reduced. In addition, since the light emitting diode 130 is disposed between the first and second reflective layers 120 and 150 and the photosensitive unit PD is disposed above the second reflective layer 150, the light beams L1, L2 and L3 emitted by the light emitting diode 130 are captured by the first and second reflective layers. After at least one of the reflective layers 120, 150 or the first and second reflective layers 120, 150 are reflected with the grid G, the photosensitive device 1000 will pass through from a place other than the photosensitive unit PD, and it is not easy to enter into the photosensitive unit PD by mistake. photosensitive layer 190 . In this way, the signal interference problem caused by the backlight module mounted outside the light sensing panel can be improved.

FIG. 2 is a schematic cross-sectional view of a light sensing device according to another embodiment of the present invention. The photo-sensing device 1000A of FIG. 2 is similar to the photo-sensing device 1000 of FIG. 1F , so the same or corresponding components are denoted by the same or corresponding reference numerals. The difference between the photo-sensing device 1000A and the photo-sensing device 1000 is that: the light-emitting diode 130A and the first reflective layer 120A of the photo-sensing device 1000A are different from the light-emitting diode 130 and the first reflective layer 120 of the photo-sensing device 1000 . The difference is mainly described below, and the similarities between the two can be referred to the foregoing description according to the symbols in FIG. 2 , and will not be repeated here.

Referring to FIG. 2, the light sensing device 1000A includes a first substrate 110, a first reflective layer 120A covering the first substrate 110, a light emitting diode 130A on the first reflective layer 120A, and a light emitting diode 130A covering the first reflective layer 120A. The first insulating layer 140A, the second reflective layer 150 disposed on the first insulating layer 140A and directly above the light-emitting diode 130A, the photosensitive unit PD located directly above the second reflective layer 150, and the photosensitive unit PD are electrically connected Active element T. The light beams L1 , L2 , L3 emitted by the light emitting diode 130A are reflected by at least one of the first reflective layer 120 and the second reflective layer 150 or the first and second reflective layers 120 , 150 and the grid G, and exit from the side of the photosensitive unit PD.

Different from the light sensing device 1000, the light emitting diode 130A of the light sensing device 1000A is a horizontal light emitting diode. In other words, the first and second electrodes 132 and 134 of the light emitting diode 130A are located on the same side of the light emitting layer 136 . For example, the first and second electrodes 132 and 134 are located on the side of the light emitting layer 136 away from the first reflective layer 120A. The LED 130A can be fixed on the first reflective layer 120A through the adhesive 220 . The first electrode 132 of the LED 130A can be electrically connected to the first reflective layer 120 through the conductive pattern 230, that is, one end of the conductive pattern 230 is connected to the first electrode 132, and the conductive pattern 230 extends toward the first reflective layer 120A, and The other end of the conductive pattern 230 is connected to the first reflective layer 120A. The opening 142 of the first insulating layer 140A only exposes the second electrode 134 of the LED 130A, and the second reflective layer 150 fills the opening 142 to be electrically connected to the second electrode 134 of the LED 130A. The photo-sensing device 1000A has similar advantages and functions to those of the photo-sensing device 1000 , which will not be repeated here.

FIG. 3 is a schematic cross-sectional view of a light sensing device according to another embodiment of the present invention. The photo-sensing device 1000B in FIG. 3 is similar to the photo-sensing device 1000 in FIG. 1 , so the same or corresponding components are denoted by the same or corresponding reference numerals. The main difference between the light sensing device 1000B and the light sensing device 1000 is that: the light emitting diode 130B of the light sensing device 1000B is different from the light emitting diode 130 of the light sensing device 1000; in addition, the light emitting diode 130B of the light sensing device 1000B may not be the same as The second reflective layer 150B is electrically connected, and the first reflective layer 120B of the photo-sensing device 1000B is slightly different from the first reflective layer 120 of the photo-sensing device 1000 . The difference will be mainly described below, and the similarities between the two can be referred to the foregoing description according to the reference numerals in FIG. 3 , and will not be repeated here.

Referring to FIG. 3 , the light sensing device 1000B includes a first substrate 110 , a first reflective layer 120B covering the first substrate 110 , a light emitting diode 130B located on the first reflective layer 120B, and a light emitting diode 130B covering the first reflective layer 120B. The first insulating layer 140B, the second reflective layer 150B disposed on the first insulating layer 140B and directly above the light emitting diode 130B, the photosensitive unit PD located directly above the second reflective layer 150B, and the photosensitive unit PD are electrically connected Active element T. The light beams L1, L2, L3 emitted by the light emitting diode 130B are reflected by at least one of the first reflective layer 120B and the second reflective layer 150B or the first and second reflective layers 120, 150 and the grid G, and then exit the photosensitive unit PD.

Different from the light sensing device 1000, the light emitting diode 130B of the light sensing device 1000B is a horizontal light emitting diode. In other words, the first and second electrodes 132 and 134 of the light emitting diode 130B are located on the same side of the light emitting layer 136 . The LED 130B can be fixed on the first reflective layer 120B through the adhesive body 220 . The first and second electrodes 132 and 134 of the light emitting diode 130B can be electrically connected to the driving circuit on the first reflective layer 120B through the conductive patterns 232 and 234 respectively, that is, one end of the conductive pattern 232 is connected to the second electrode 134 and conducts electricity. The pattern 232 extends toward the first reflective layer 120A, and the other end of the conductive pattern 232 is connected to the first reflective layer 120A, and one end of the conductive pattern 234 is connected to the first electrode 132, and the conductive pattern 234 extends toward the first reflective layer 120A, and The other end of the conductive pattern 234 is connected to the first reflective layer 120A, wherein the conductive patterns 232 and 234 extend toward the first reflective layer 120A on different sides of the LED 130B, that is, the first reflective layer 120A has a first portion (not shown) Separated from the second portion (not shown), the first portion and the second portion are separated to transmit different potentials and prevent short circuiting of the first and second electrodes 132 and 134 of the LED 130B. Therefore, the conductive pattern 232 extends toward the first portion (not shown) of the first reflective layer 120A, and the conductive pattern 234 extends toward the second portion (not shown) of the first reflective layer 120A. The second reflective layer 150B may not be connected to the light emitting diode 130B, that is, the first insulating layer 140B does not have any opening 142 , and the second reflective layer 150B is disposed on the first insulating layer 140B above the light emitting diode 130B. The photo-sensing device 1000B has similar advantages and functions to those of the photo-sensing device 1000 , which will not be repeated here.

4A to 4F are schematic cross-sectional views of the manufacturing process of the photo-sensing device according to another embodiment of the present invention. Referring to FIG. 4A , firstly, a first substrate 310 is provided. The first substrate 310 may be a transparent first substrate or an opaque/reflective first substrate. For example, the material of the light-transmitting first substrate can be glass, quartz, plastic or other suitable materials, and the material of the opaque/reflective first substrate can be wafer, ceramics or other suitable materials, but the present invention does not limit. Next, a conductive layer 320 is formed to cover the first substrate 310 . In this embodiment, the conductive layer 320 includes a gate G and a light-shielding pattern 322 separated from each other. The gate G is disposed on the first substrate 310 and located on the same film layer as the light-shielding pattern 322 . The conductive layer 320 can be made of conductive materials, such as: metal, alloy, nitride of metal material, oxide of metal material, oxynitride of metal material, or a stacked layer of metal material and other conductive materials, but the present invention does not rely on This is the limit.

Referring to FIG. 4A , next, a first insulating layer 330 is formed to cover the gate G and the light-shielding pattern 322 . The first insulating layer 330 may have a contact hole 332 exposing a portion of the light-shielding pattern 322 . In this embodiment, the material of the first insulating layer 330 can be an inorganic material (such as silicon oxide, silicon nitride, silicon oxynitride, or a stacked layer of at least two of the above materials), an organic material, or a combination thereof. Next, a channel layer CH is formed on the first insulating layer 330 . The channel layer CH is disposed above the gate G. In this embodiment, the channel layer CH can be a single-layer or multi-layer structure, which includes amorphous silicon, polycrystalline silicon, microcrystalline silicon, single crystal silicon, organic semiconductor materials, oxide semiconductor materials (for example: indium zinc oxide, InGeZnO, or other suitable materials, or the above combinations), or other suitable materials, or containing dopant in the above materials, or the above combinations.

Referring to FIG. 4A , next, an adhesive body 340 and a light emitting diode 350 can be formed on the first insulating layer 330 . The LED 350 can be fixed on the first substrate 310 through the adhesive body 340 . In this embodiment, the LED 350 can be a horizontal LED. In other words, the first and second electrodes 352 and 354 of the light emitting diode 350 can be located on the same side of the light emitting layer 356 , but the invention is not limited thereto.

Referring to FIG. 4A , next, a conductive layer 360 is formed. In this embodiment, the material of the conductive layer 360 can be metal, alloy, nitride of metal material, oxide of metal material, oxynitride of metal material, or a stacked layer of metal material and other conductive materials, but this The invention is not limited thereto. The conductive layer 360 includes a circuit pattern 362 , a source S, a drain D and a first photosensitive electrode 364 . The circuit pattern 362 , the source S, the drain D and the first photosensitive electrode 364 belong to the same film layer. The circuit pattern 362 is electrically connected to the first electrode 352 and the second electrode 354 of the LED 350 . The circuit pattern 362 can also fill in the contact hole 332 of the first insulating layer 330 to be electrically connected to the light-shielding pattern 322 . For example, the circuit pattern 362 connected to the first electrode 352 can be called a first circuit pattern, and the circuit pattern 362 connected to the second electrode 354 can be called a second circuit pattern, then one end of the first circuit pattern and the first electrode 352 connection, the other end of the first circuit pattern is connected to the light-shielding pattern 322 through the contact hole 332, and one end of the second circuit pattern is connected to the second electrode 354, and the other end of the second circuit pattern is arranged on the first insulating layer 330, wherein, the first One is separated from the second circuit pattern to transmit different potentials and prevent short circuit between the first and second electrodes 332 and 334 of the LED 350 . The source S and the drain D are disposed on the channel layer CH, and are respectively electrically connected to two sides of the channel layer CH. One of the source S and the drain D (eg, the drain D) is electrically connected to the first photosensitive electrode 364 , and the first photosensitive electrode 364 overlaps at least a part of the light shielding pattern 322 . The source S, the drain D, the channel layer CH and the gate G constitute the active element T. The active device T in this embodiment is exemplified by a bottom-gate transistor. In other embodiments, the active device T may be a top-gate transistor or other suitable types of transistors.

Referring to FIG. 4A , next, an insulating layer 370 is formed. The insulating layer 370 covers the LED 350 , the circuit pattern 362 , the source S and the drain D. As shown in FIG. The insulating layer 370 has an opening 372 exposing a portion of the first photosensitive electrode 364 . The material of the insulating layer 370 can be an inorganic material (such as silicon oxide, silicon nitride, silicon oxynitride, or a stacked layer of at least two of the above materials), an organic material, or a combination thereof. Next, a light blocking structure 380 is formed on the edge of the opening 372 of the insulating layer 370 . The light blocking structure 380 has an opening 382 exposing a portion of the first photosensitive electrode 364 . The light blocking structure 380 also has an inner edge 380a defining the opening 382 , an outer edge 380b opposite to the inner edge 380a , a bottom surface 380c facing the first substrate 310 , and a first top surface 380d away from the first substrate 310 . The area of the orthographic projection of the opening 382 of the light blocking structure 380 in this example is smaller than the area of the orthographic projection of the opening 372 of the insulating layer 370, and the opening 382 is located in the opening 372, that is, the inner edge 380a will respectively cover the inner edge of the opening 372 and part of the first photoreceptor. The electrode 364 is an example, which can make subsequent processes have better tolerance. In other embodiments, the area of the orthographic projection of the opening 382 of the light blocking structure 380 is larger than the area of the orthographic projection of the opening 372 of the insulating layer 370, and the opening 372 is located in the opening 382, which can make the area of the orthographic projection of the photosensitive layer 400 larger, that is, the photosensitive area Larger, it can also make the follow-up process have a better tolerance. Alternatively, the opening 382 of the light blocking structure 380 overlaps with the opening 372 of the insulating layer 370 , and the edge of the opening 382 corresponds to the edge of the opening 372 .

Referring to FIG. 4B , next, a reflective layer 390 is formed. The reflective layer 390 at least covers the outer edge 380b and part of the top surface 380d of the light blocking structure 380 and exposes part of the first photosensitive electrode 364 . The material of the reflective layer 390 can be metal, alloy, nitride of metal material, oxide of metal material, oxynitride of metal material, or other suitable materials, or a stacked layer of at least two of the foregoing materials, but The present invention is not limited thereto. Referring to FIG. 4C , next, a photosensitive layer 400 is formed on the first photosensitive electrode 364 . The reflective layer 390 still exposes the photosensitive layer 400 . The photosensitive layer 400 is located in the opening 382 of the light blocking structure 380 . The light blocking structure 380 is at least located on opposite sides of the photosensitive layer 400 . In this embodiment, the light blocking structure 380 may surround the photosensitive layer 400 . The material of the photosensitive layer 400 is, for example, SivOw, wherein v and w are not zero, but not limited thereto. The photosensitive layer 400 includes, for example, a first-type semiconductor material layer, an intrinsic semiconductor material layer, and a second-type semiconductor material layer stacked in sequence, and one of the first-type semiconductor material layer and the second-type semiconductor material layer is One is a p-type semiconductor material and the other is an n-type semiconductor material. However, the present invention is not limited thereto. In other embodiments, the material of the photosensitive layer 400 may also be a first-type semiconductor material layer and a second-type semiconductor material layer stacked in sequence, and the first-type semiconductor material layer and the second-type semiconductor material layer The polarity of the second-type semiconductor material layer is different, or the first-type semiconductor material layer and the intrinsic semiconductor material layer, or other suitable materials.

Referring to FIG. 4D , next, an insulating layer 410 is formed. The insulating layer 410 covers the reflective layer 390 , the active device T, the LED 350 and part of the insulating layer 370 . The insulating layer 410 has an opening 412 . The opening 412 at least exposes the photosensitive layer 400 . In this embodiment, the opening 412 can also expose the inner edge 380 a of the light blocking structure 380 , but the invention is not limited thereto. The material of the insulating layer 410 can be an inorganic material (such as silicon oxide, silicon nitride, silicon oxynitride, or a stacked layer of at least two of the above materials), an organic material, or a combination thereof.

Referring to FIG. 4E , next, a second photosensitive electrode 420 is formed to cover the photosensitive layer 400 . The second photosensitive electrode 420 is a transparent electrode. In this embodiment, the material of the second photosensitive electrode 420 can be selected from indium tin oxide, indium zinc oxide, aluminum tin oxide, aluminum zinc oxide, indium germanium zinc oxide, graphene, nano silver, carbon nano tube /rod, or other suitable oxides, or stacked layers of at least two of the above, but the present invention is not limited thereto. The first photosensitive electrode 364 , the photosensitive layer 400 and the second photosensitive electrode 420 form a photosensitive unit PD. The second photosensitive electrode 420 is opposite to the first photosensitive electrode 364 . The photosensitive layer 400 is sandwiched between the first photosensitive electrode 364 and the second photosensitive electrode 420 . The first photosensitive electrode 364 is located between the photosensitive layer 400 and the first substrate 310 . In this embodiment, the second photosensitive electrode 420 can straddle at least one of the light blocking structures 380 . In other words, part of the second photosensitive electrodes 420 may be located outside the opening 382 , but the invention is not limited thereto. In this embodiment, the light shielding pattern 322 may be located between the first substrate 310 and the photosensitive unit PD to shield the photosensitive layer 400 . The light-shielding pattern 322 and the gate G can be formed in the same step, and are located above the surface 310 a of the first substrate 310 . The light emitting diode 350 can be in contact with the light-shielding pattern 322 through the contact hole 332 of the first insulating layer 330 . Further, the light-emitting diode 350 is electrically connected to the light-shielding pattern 322, and the light-shielding pattern 322 can be used as a driving circuit of the light-emitting diode 350, but the invention is not limited thereto.

Please refer to FIG. 4F , and then, a protective layer 430 is formed to cover all components under the protective layer 430 , such as the active device T, the photosensitive unit PD, and the like. Here, the light sensing device 2000 of this embodiment is completed. In this embodiment, the protective layer 430 can be made of inorganic materials (for example, silicon oxide, silicon nitride, silicon oxynitride, or a stacked layer of at least two of the above materials), organic materials, or a combination thereof.

As shown in FIG. 4F , the light emitting diode 350 is disposed on the first substrate 310 and located beside the photosensitive unit PD. The light blocking structure 380 is substantially located on the same plane as the photosensitive unit PD and the light emitting diode 350 , and the light blocking structure 380 is located at least on both sides of the photosensitive unit PD. Furthermore, the photosensitive layer 400 has a contact surface 400 a contacting with the second photosensitive electrode 420 . The LED 350 has a top surface 350 a away from the first substrate 110 . In this embodiment, the distance h1 between the top surface 380d of the light blocking structure 380 and the first substrate 310 is greater than the distance h2 between the contact surface 400a and the first substrate 310 and the distance h3 between the top surface 350a of the LED 350 and the first substrate 310 . In short, the light blocking structure 380 is higher than the LED 350 and the photosensitive layer 400 .

Since the light-emitting diode 350 and the photosensitive unit PD are located on the same first substrate 310, that is, the light-emitting diode 350 is built in the light-sensing panel to which the photosensitive unit PD belongs, therefore, the light-sensing device 2000 can be omitted from the The backlight module other than the light sensing panel, so the thickness of the light sensing device 2000 can be reduced. In addition, due to the design of the light blocking structure 380 , the light beam L emitted by the light emitting diode 350 is blocked by the light blocking structure 380 and is not easy to enter into the photosensitive layer 400 of the photosensitive unit PD by mistake. In this way, the signal interference problem caused by the backlight module installed outside the light sensing panel can be improved. In addition, the configuration of the reflective layer 390 not only reduces the probability of the inappropriate light beam L entering the photosensitive layer 400, but also reflects the light beam L to the outside of the light sensing device 2000, so as to improve the utilization efficiency of the light beam L.

FIG. 5 is a schematic cross-sectional view of a light sensing device according to an embodiment of the present invention. Referring to FIG. 5 , the light sensing device 3000 includes a first substrate 510 , an active device T1 , a first insulating layer 520 , a reflective electrode 530 , a light emitting diode 540 , a second insulating layer 550 and a photosensitive unit PD. The first substrate 510 has a carrying surface 510a. The first substrate 510 may be a transparent first substrate or an opaque/reflective first substrate. For example, the material of the light-transmitting first substrate can be glass, quartz, plastic or other suitable materials, and the material of the opaque/reflective first substrate can be wafer, ceramics or other suitable materials, but the present invention does not limit.

The active device T1 is disposed on the carrying surface 510 a of the first substrate 510 . The active element T1 includes thin film transistors. The thin film transistor includes a gate G1 , a channel layer CH1 overlapping with the gate G1 , and a source S1 and a drain D1 electrically connected to two sides of the channel layer CH1 . A gate insulating layer GI is interposed between the gate G1 and the channel layer CH1. In this embodiment, the channel layer CH1 may be located above the gate G1. In other words, the active device T1 can be a bottom gate TFT. However, the present invention is not limited thereto. In other embodiments, the active device T1 may be a top gate TFT or other suitable devices. The light sensing device 3000 of this embodiment may further include an active element T2. The active element T1 and the active element T2 may be located on the same plane (for example: the bearing surface 510 a ), but the invention is not limited thereto. The active element T2 includes thin film transistors. The thin film transistor includes a gate G2 , a channel layer CH2 overlapping with the gate G2 , and a source S2 and a drain D2 electrically connected to two sides of the channel layer CH2 . A gate insulating layer GI is interposed between the gate G2 and the channel layer CH2. In this embodiment, the channel layer CH2 may be located above the gate G2. In other words, the active device T2 may be a bottom gate thin film transistor. However, the present invention is not limited thereto. In other embodiments, the active device T2 may be a top gate thin film transistor or other suitable devices.

The first insulating layer 520 covers the active device T1 and has a first opening 522 . The first insulating layer 520 has a sidewall 524 defining a first opening 522 . In this embodiment, the first opening 522 of the first insulating layer 520 can expose one of the source S1 and the drain D1 (eg, the drain D1 ) of the active device T1 . The first insulating layer 520 may further have another second opening 526 outside the first opening 522 . The second opening 526 can expose one of the source S2 and the drain D2 (eg, the drain D2 ) of the active device T2 . The material of the first insulating layer 520 can be an inorganic material (such as silicon oxide, silicon nitride, silicon oxynitride, or a stacked layer of at least two of the above materials), an organic material, or a combination thereof.

The reflective electrode 530 is located in the first opening 522 and at least covers the sidewall 524 of the first insulating layer 520 . In this embodiment, the reflective electrode 530 can completely cover the sidewall 524 . Furthermore, the reflective electrode 530 also covers one of the source S1 and the drain D1 (eg, the drain D1 ) exposed by the first opening 522 . In other words, in this embodiment, the reflective electrode 530 may be in the shape of a cup and completely cover the sidewall 524 of the first opening 522 and the exposed components of the first opening 522 (eg, part of the drain D1 ). The inner diameter d of the cup may gradually increase as it gets away from the first substrate 510 . However, the present invention is not limited thereto, and in other embodiments, the reflective electrode 530 may also cover the sidewall 524 without covering the components exposed by the first opening 522 . In this embodiment, the material of the reflective electrode 530 can be metal, alloy, nitride of metal material, oxide of metal material, oxynitride of metal material, or other suitable materials, or at least two of the above materials. The stacked layers, but the present invention is not limited thereto.

The light sensing device 3000 of this embodiment further includes a conductive pattern 532 . The conductive pattern 532 and the reflective electrode 530 can be located on the same film layer. The conductive pattern 532 is disposed on the first insulating layer 520 , that is, the conductive pattern 532 is disposed on the first insulating layer 520 above the active devices T1 and T2 . The conductive pattern 532 fills the second opening 526 of the first insulating layer 520 and is electrically connected to one of the source S2 and the drain D2 of the active device T2, wherein the conductive pattern 532 is separated from the reflective electrode 530 for The active elements T1 and T2 respectively connected to the conductive pattern 532 and the reflective electrode 530 can operate independently without interfering with each other. It should be noted that the present invention does not limit the photo-sensing device to include the conductive pattern 532 , and in other embodiments, the conductive pattern 532 may not be provided, and examples will be described in the following embodiments.

The LED 540 is disposed in the first opening 522 . The reflective electrode 530 surrounds the LED 540 . In this embodiment, the light emitting diode 540 can be located on the reflective electrode 530 and can be electrically connected to one of the source S1 and the drain D1 of the first active device T1 through the reflective electrode 530 . However, the present invention is not limited thereto. In other embodiments, the reflective electrode 530 may also expose one of the source S1 and the drain D1, that is, the reflective electrode 530 is not connected to the source S1 and the drain D1, and emits light. The diode 540 can be directly located on one of the source S1 and the drain D1 to be electrically connected to the active device T1.

The reflective electrode 530 has a point 530a farthest from the first substrate 510 in a direction parallel to the vertical direction y. The vertical direction y is parallel to the normal direction of the carrying surface 510a. The distance between the point 530a and the first substrate 510 is H1. The light emitting diode 540 has a point 540 a farthest from the first substrate 510 in a direction parallel to the direction y. The distance between the point 540a and the first substrate 510 is H2. In this embodiment, H1≥H2. In other words, the height of the reflective electrode 530 may be equal to or greater than that of the light emitting diode 540, but the invention is not limited thereto. On the other hand, the LED 540 has a maximum width W in the horizontal direction x perpendicular to the vertical direction y, and H1, H2, W can satisfy the following formula: 0≤(H1-H2)≤(2/3W). When H1, H2, W satisfy the following formula: 0≦(H1−H2)≦(2/3W), the viewing angle and sensing function of the light sensing device 3000 can be optimized at the same time.

The second insulating layer 550 covers the LED 540 and the reflective electrode 530 . In this embodiment, the second insulating layer 550 also covers the conductive pattern 532 . The second insulating layer 550 has a third opening 552 . The third opening 552 exposes part of the conductive pattern 532 . The material of the second insulating layer 550 can be an inorganic material (such as silicon oxide, silicon nitride, silicon oxynitride, or a stacked layer of at least two of the above materials), an organic material, or a combination thereof.

The photosensitive unit PD is disposed on the second insulating layer 550 . The photosensitive unit PD includes a first photosensitive electrode 560 , a second photosensitive electrode 570 opposite to the first photosensitive electrode 560 , and a photosensitive layer 580 sandwiched between the first photosensitive electrode 560 and the second photosensitive electrode 570 . The opening 592 a of the insulating layer 592 exposes part of the first photosensitive electrode 560 , and the photosensitive layer 580 can be located in the opening 592 a of the insulating layer 592 . The first photosensitive electrode 560 fills the third opening 552 of the second insulating layer 550 and is electrically connected to the active device T2 through the conductive pattern 532 . The first photosensitive electrode 560 is closer to the first substrate 510 than the second photosensitive electrode 570 and is an opaque/reflective electrode, and its material can refer to the foregoing description. The first photosensitive electrode 560 is disposed on the second insulating layer 550 and does not overlap with the light emitting diode 540 in the vertical direction y. In other words, the opaque/reflective first photosensitive electrode 560 and the light emitting diode 540 are staggered. The second photosensitive electrode 570 is a transparent electrode. In addition, in this embodiment, the light sensing device 3000 may further include a protective layer 590 . The protection layer 590 covers all components below it, such as the photosensitive unit PD and the like. The protective layer 590 can be made of inorganic materials (for example, silicon oxide, silicon nitride, silicon oxynitride, or a stacked layer of at least two of the above materials), organic materials, or a combination thereof.

Since the light-emitting diode 540 is built in the photo-sensing panel to which the photo-sensing unit PD belongs, the photo-sensing device 3000 can save the backlight module that is hung outside the photo-sensing panel, so that the thickness of the photo-sensing device 3000 can be greatly reduced. thinning. In addition, through the design of the reflective layer 530 surrounding the LED 540 , the reflective layer 530 can concentrate the light beam L emitted by the LED 540 toward the front view direction (ie, the vertical direction y). Thereby, when the light sensing device 3000 detects an object F (for example, a user's finger), the light beam L reflected by the object F can enter the corresponding photosensitive unit PD at a relatively small reflection angle. In this way, the sharpness of the image of the object F detected by the light sensing device 3000 can be improved, so that a clear image of the object F can be obtained.

FIG. 6 is a schematic cross-sectional view of a light sensing device according to another embodiment of the present invention. The photo-sensing device 3000A in FIG. 6 is similar to the photo-sensing device 3000 in FIG. 5 , so the same or corresponding components are denoted by the same or corresponding reference numerals. The main difference between the photo-sensing device 3000A and the photo-sensing device 3000 is that the photo-sensing unit PD of the photo-sensing device 3000A is arranged on another substrate, unlike the photo-sensing unit PD of the photo-sensing device 3000, which is directly arranged on the first substrate. on the insulating layer 520 . The difference is mainly described below, and for the similarities between the two, please refer to the above description, and will not be repeated here.

The light sensing device 3000A includes a first substrate 510, an active device T1, a first insulating layer 520, a reflective electrode 530, a light emitting diode 540, a second insulating layer (serving as a second substrate) 550A, and a photosensitive unit PD. The first substrate 510 has a carrying surface 510a. The active device T1 is disposed on the carrying surface 510 a of the first substrate 510 . The first insulating layer 520 covers the active device T1 and has a first opening 522 . The first insulating layer 520 has a sidewall 524 defining a first opening 522 . The reflective electrode 530 is located in the first opening 522 and covers at least the sidewall 524 . The LED 540 is disposed in the first opening 522 . The reflective electrode 530 surrounds the LED 540 . The second insulating layer (serving as the second substrate) 550A covers the LED 540 , the active device T1 and the first insulating layer 520 . The photosensitive unit PD is disposed on the second insulating layer 550A (served as the second substrate). The photosensitive unit PD includes a first photosensitive electrode 560 . The first photosensitive electrode 560 is disposed on the second insulating layer (serving as the second substrate) 550A and does not overlap with the LED 540 in the vertical direction y, wherein the vertical direction y is parallel to the normal direction of the carrying surface 510a. Different from the photo-sensing device 3000 , the second insulating layer (served as the second substrate) 550A is another substrate without direct contact with the LED 540 . The active device T2 and the photosensitive unit PD are disposed on another substrate (ie, the second insulating layer (second substrate) 550A) and electrically connected to the photosensitive unit PD. In other words, the active element T2 and the photosensitive unit PD are located on the inner surface of the second insulating layer (served as the second substrate) 550A, while the active element T1 and the LED 540 are located outside the second insulating layer (served as the second substrate) 550A. surface and the carrying surface 510 a of the first substrate 510 . The light emitting diode 540 is staggered from the active device T2 and the photosensitive unit PD. The photo-sensing device 3000A has functions and advantages similar to those of the photo-sensing device 3000, which will not be repeated here.

To sum up, in the light-sensing device according to an embodiment of the present invention, the light-emitting diodes are built into the light-sensing panel to which the light-sensing unit belongs. Therefore, the light-sensing device may not include a backlight module located outside the light-sensing panel , so that the thickness of the light sensing device can be greatly reduced. In addition, since the light-emitting diode is disposed between the first and second reflective layers and the photosensitive unit is disposed above the second reflective layer, the light beam emitted by the light-emitting diode will pass through the side of the photosensitive unit after being reflected by the first and second reflective layers The photosensitive device is not easy to enter the photosensitive layer of the photosensitive unit by mistake. In this way, the signal interference problem caused by the backlight module installed outside the light sensing panel can be improved.

In another embodiment of the light-sensing device of the present invention, in addition to the fact that the light-emitting diode is built into the light-sensing panel to which the light-sensing unit belongs, the thickness of the light-sensing device can be greatly reduced, by at least disposing the The light-shielding structures on both sides of the light-emitting diodes, the light beams emitted by the light-emitting diodes will be blocked by the light-shielding structures, and will not easily enter the photosensitive layer of the photosensitive unit by mistake. In this way, the signal interference problem caused by the backlight module installed outside the light sensing panel can be improved.

In the photo-sensing device according to another embodiment of the present invention, in addition to the fact that the light-emitting diode is built into the photo-sensing panel to which the photo-sensing unit belongs, the thickness of the photo-sensing device can be greatly reduced, and by surrounding the light-emitting The reflective layer of the diode can concentrate the light beam emitted by the light-emitting diode toward the front view direction. Thereby, when the light sensing device detects an object, the light beam reflected by the object can enter the corresponding light sensing unit at a relatively small reflection angle. In this way, the sharpness of the object image detected by the light sensing device can be improved, so as to obtain a clear object image.

Certainly, the present invention also can have other multiple embodiments, without departing from the spirit and essence of the present invention, those skilled in the art can make various corresponding changes and deformations according to the present invention, but these corresponding Changes and deformations should all belong to the protection scope of the appended claims of the present invention.

Claims (7)

1. A light sensing device, characterized in that, comprising: a first substrate; an active element configured on the first substrate; A photosensitive unit, configured on the first substrate and electrically connected to the active element, the photosensitive unit includes: a first photosensitive electrode configured on the first substrate; a photosensitive layer configured on the first photosensitive electrode; and a second photosensitive electrode configured on the photosensitive layer; a light emitting diode, configured on the first substrate and located next to the photosensitive unit; a light-shielding structure located on both sides of the photosensitive unit, wherein the connection direction of the light-shielding structure, the photosensitive unit and the light-emitting diode is arranged along a horizontal direction; and A light shielding pattern is located between the first substrate and the photosensitive unit to shield the photosensitive layer of the photosensitive unit, wherein the LED is electrically connected to the light shielding pattern. 2. The light sensing device according to claim 1, wherein the light blocking structure surrounds the light sensing unit. 3. The light sensing device according to claim 1, wherein the light blocking structure has a first top surface, the photosensitive layer has a second top surface, and the light emitting diode has a third top surface, wherein The distance between the first top surface and a carrying surface of the first substrate is greater than the distance between the second top surface and the carrying surface and the distance between the third top surface and the carrying surface. 4. The light sensing device according to claim 3, further comprising: A reflective layer covers an outer edge of the light-shielding structure and the top surface of the light-shielding structure and exposes the photosensitive layer. 5. The photo-sensing device of claim 1, wherein the second photo-sensing electrode of the photo-sensing unit straddles the light-shielding structure. 6. The light sensing device according to claim 1, further comprising: a first insulating layer covering the light-shielding pattern and having a contact hole; and A circuit pattern is arranged on the light-emitting diode and is electrically connected with the light-emitting diode. The circuit pattern is filled in the contact hole and is electrically connected with the light-shielding pattern, wherein the active element includes a gate, and the gate is provided on the The first substrate is on the same film layer as the light-shielding pattern. 7 . The light sensing device according to claim 6 , wherein the light emitting diode comprises a first electrode and a second electrode, and the connection direction of the two electrodes is arranged along a horizontal direction. 8 .