CN107091822A - The device and its detection method of double light source activation luminescence generated by light detection semiconductor defects - Google Patents
The device and its detection method of double light source activation luminescence generated by light detection semiconductor defects Download PDFInfo
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- G01N21/62—Systems in which the material investigated is excited whereby it emits light or causes a change in wavelength of the incident light
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Abstract
The invention discloses the device that a kind of pair of light source activation luminescence generated by light detects semiconductor defect, including：First laser light source, second laser light source, semiconductor samples, the first lens, the first light splitting piece, the second light splitting piece, speculum, the first optical filter, the second optical filter, the second lens, monochromator, photodetector and computer；The luminescence generated by light of first laser light source activation semiconductor samples；Second laser light source makes the deep energy level defect electronic state saturation in semiconductor samples material；Photodetector finally detects optical signal at monochromator light-emitting window, obtain the photoluminescence spectra that double light source activation samples are obtained, the luminescent spectrum that contrast single light source is obtained with two-source illumination sample, confirms whether the deep energy level defect in semiconductor samples is effective Carrier recombination center.The invention also discloses the detection method that a kind of pair of light source activation luminescence generated by light detects semiconductor defect.
Description
Technical field
The invention belongs to defects from semiconductor materials detection technique, it is related to a kind of pair of light source activation luminescence generated by light detection semiconductor
The device and its detection method of defect.
Background technology
The exciting light that defect in luminescence generated by light detection semi-conducting material mainly uses light energy to be more than energy gap swashs
Extra carrier is sent, by measuring the carrier radiation transistion spectrum of interband, passes through (such as light intensity, temperature under different condition
Deng) spectrum change the information such as level of energy, distribution qualitatively to study defect, but the method can only detect that shallow energy level is scarce
Sunken characteristic, it is impossible to obtain the information of deep energy level defect.
In order to detect shallow energy level defect and the characteristic of deep energy level defect simultaneously, the present invention proposes a kind of pair of light source and swashed
The device and its detection method of luminous photoluminescence detection semiconductor defect.
The content of the invention
The invention discloses the device that a kind of pair of light source activation luminescence generated by light detects semiconductor defect, including：First laser
Light source, second laser light source, semiconductor samples, spectroscope, speculum, convex lens, optical filter, monochromator, photodetector and
Computer；The first laser light source is radiated at the sample surfaces of detection by light splitting piece and lens focus, is partly led for exciting
Body sample produces luminescence generated by light；The second laser light source is radiated at the sample surfaces of detection by light splitting piece and lens focus,
For making a certain deep energy level defect electronic state saturation in semiconductor samples；Luminescence generated by light signal by the lens collect after by
Collected again by lens to the monochromator entrance slit after the light splitting piece, speculum, optical filter；The photodetector is used
Slit optical signal is penetrated in detection monochromator light extraction；The output of the photodetector is connected with the computer, obtains double light sources
The photoluminescence spectra that sample is obtained is excited, contrast only with the first laser light source irradiating sample with using the short wavelength simultaneously
The luminescent spectrum obtained with second laser light source irradiating sample, to confirm whether the deep energy level defect in semiconductor samples is effective
Carrier recombination center.
In the device of described pair of light source activation luminescence generated by light detection semiconductor defect proposed by the present invention, the first laser
The wavelength of light source is in as in the range of 300nm-2000nm, and spectrum halfwidth scope is 0.01nm-10nm, and photon energy is more than
The energy gap of the semiconductor samples.
In the device of described pair of light source activation luminescence generated by light detection semiconductor defect proposed by the present invention, the second laser
The wavelength of light source is in as in the range of 300nm-2000nm, spectrum halfwidth scope is 0.01nm-10nm, and photon energy can
Adjust, photon energy is identical with the energy bite of valence band with any deep energy level defect energy level in the semiconductor samples.
In the device of described pair of light source activation luminescence generated by light detection semiconductor defect proposed by the present invention, the first laser
Light source and second laser light source can be two kinds of identical LASER Light Source instruments but be not limited to it is identical, but send when in use swash
Light has point of wavelength length and photon energy height.
In the device of described pair of light source activation luminescence generated by light detection semiconductor defect proposed by the present invention, described first filters
Piece only filters the excitation source spectrum of the first laser light source, and filter types are limited light optical filter, at filter wavelength scope
In the range of for 300nm-2000nm, optical filtering spectral half-width is 0.01nm-10nm.
In the device of described pair of light source activation luminescence generated by light detection semiconductor defect proposed by the present invention, described second filters
Piece can only filter the excitation source spectrum of the second laser light source, and filter types are limited light optical filter, filter wavelength model
Enclose in in the range of 300nm-2000nm, optical filtering spectral half-width is 0.01nm-10nm.
In the device of described pair of light source activation luminescence generated by light detection semiconductor defect proposed by the present invention, the photodetection
Device spectral response range covers the photoluminescence spectra scope of the semiconductor samples.
In the device of described pair of light source activation luminescence generated by light detection semiconductor defect proposed by the present invention, the computer bag
Include data acquisition and Data Management Analysis software.
The invention also provides a kind of double light source activation luminescence generated by lights using the detection means detect semiconductor defect
Detection method, comprise the following steps：
Step one：Using the first laser light source by light splitting piece to lens so as to focus to semiconductor samples surface,
Luminescence generated by light for vitalizing semiconductor sample；
Step 2：Using the photodetector detection monochromator exit slit outgoing only by the first laser
Light source irradiates photoluminescence spectra caused by the semiconductor samples；
Step 3：Using the second laser light source by the light splitting piece to lens so as to focus to the semiconductor sample
Product surface, it is identical to the position on the semiconductor samples surface with first laser light-resource fousing described in step one, it is described for making
Deep energy level defect electronic state saturation in semiconductor samples material；
Step 4：Using the photodetector detection monochromator exit slit outgoing by the first laser light
Source and the second laser light source irradiate photoluminescence spectra caused by the semiconductor samples simultaneously；
Step 5：The photoluminescence spectra intensity that step 3 is measured with step 4 is contrasted, if the spectrum of step 4 measurement
Intensity is more than the spectral intensity that step 3 is measured, and illustrates corresponding with the second laser light source light energy in the semiconductor samples
Deep energy level defect be effective Carrier recombination center, if if step 4 measurement spectral intensity be equal to step 3 measurement
Spectral intensity, illustrate that deep energy level defect corresponding with the second laser light source light energy is not in the semiconductor samples
It is effective Carrier recombination center.
Detection method is mainly luminous using double light source laser excitation semiconductor samples generation light, wherein a laser
Light source light energy be more than semiconductor energy gap, for excite sample produce luminescence generated by light, in addition a LASER Light Source light energy with
The level of energy (energy bite with valence band) of a certain deep energy level defect is corresponding in semiconductor energy gap, for saturation deep energy level
The electronic state of defect, the contrast of luminescence generated by light spectral intensity during by contrasting the electronic state saturation of deep energy level defect with unsaturation,
To detect or judge whether deep energy level defect is effective Carrier recombination center, for the electroluminescent of current common monochromatic light source excitation
Luminous measurement can only detect that the method for shallow defect level in semiconductor is a supplement well.
Brief description of the drawings
Fig. 1 is the structure composition of the device embodiment of of the present invention pair of light source activation luminescence generated by light detection semiconductor defect
Schematic diagram.
Fig. 2 is of the present invention pair of light source activation luminescence generated by light detection deep level in semiconductor defect schematic diagram.
Fig. 3 for caused by single light source laser excitation CIGS (CIGS) material of measurement during photoluminescence spectra with double light
Source laser excites photoluminescence spectra caused by CIGS simultaneously.
Embodiment
With reference to specific examples below and accompanying drawing, the present invention is described in further detail.The process of the implementation present invention,
Condition, experimental method etc., are the universal knowledege and common knowledge of this area, this hair in addition to the following content specially referred to
It is bright that content is not particularly limited.
Referring to Fig. 1, double light source activation luminescence generated by lights detection deep level in semiconductor defect detecting device of the invention includes：The
One LASER Light Source 1, second laser light source 2, semiconductor samples 3, the first lens 4, the first light splitting piece 5, the second light splitting piece 6, reflection
Mirror 7, the first optical filter 8, the second optical filter 9, the second lens 10, monochromator 11, photodetector 12 and computer 13.First swashs
Radiant 1 is by the lens 4 of the first light splitting piece 5 to the first so that the surface of semiconductor samples 3 is focused to, for vitalizing semiconductor sample
3 luminescence generated by light；Only being irradiated partly by first laser light source 1 for the exit slit outgoing of monochromator 11 is detected using photodetector 12
Photoluminescence spectra caused by conductor sample 3；Using second laser light source 2 by the lens 4 of the second light splitting piece 6 to the first so as to poly-
Jiao is identical with the position that first laser light source 1 focuses to the surface of semiconductor samples 3 to the surface of semiconductor samples 3, for making partly to lead
Deep energy level defect electronic state saturation in the material of body sample 3；The exit slit outgoing of monochromator 11 is detected using photodetector 12
By first laser light source 1 and second laser light source 2 irradiate semiconductor samples 3 simultaneously caused by photoluminescence spectra；Contrast is only
Photoluminescence spectra intensity is with using first laser light source 1 and second laser light source 2 simultaneously caused by being excited with first laser light source 1
Photoluminescence spectral intensity caused by exciting, if photoluminescence spectra intensity is more than caused by only being excited with first laser light source 1
Photoluminescence spectral intensity, illustrates in semiconductor samples 3 excited with first laser light source 1 and second laser light source 2 simultaneously caused by
Deep energy level defect corresponding with the light energy of second laser light source 2 is effective Carrier recombination center, if equal to, explanation
Deep energy level defect corresponding with the light energy of second laser light source 2 is not effective Carrier recombination center in semiconductor samples 3.
The wavelength of first laser light source 1 is in as in the range of 300nm-2000nm, spectrum halfwidth scope is 0.01nm-
10nm, and photon energy is more than the energy gap of semiconductor samples 3.Common semiconductor Ge, Si, GaAs, CIGS, GaN and gold
The energy gap of hard rock is respectively 0.66eV, 1.12eV, 1.42eV, 1.01~1.68eV, 3.44eV and 5.47eV at room temperature.
The wavelength of second laser light source 2 is in as in the range of 300nm-2000nm, spectrum halfwidth scope is 0.01nm-
10nm, and photon energy is adjustable, photon energy is less than in the energy gap of semiconductor samples 3, and photon energy and semiconductor sample
A certain deep energy level defect energy level in product 3 is close with the energy bite of valence band.
During implementing technical solution of the present invention, the optical maser wavelength of first laser light source is less than swashing for second laser light source
Optical wavelength.
First optical filter 8 can only filter the excitation source spectrum of first laser light source 1.Filter types be limited light optical filtering
Piece, filter wavelength scope is in as in the range of 300nm-2000nm, optical filtering spectral half-width is 0.01nm-10nm.
Second optical filter 9 can only filter the excitation source spectrum of second laser light source 2.Filter types be limited light optical filtering
Piece, filter wavelength scope is in as in the range of 300nm-2000nm, optical filtering spectral half-width is 0.01nm-10nm.
The grating of monochromator 11 covers the photoluminescence spectra scope of the semiconductor samples 3, in 200nm~3000nm models
In enclosing.
The spectral response range of photodetector 12 covers the photoluminescence spectra scope of the semiconductor samples 3.
Computer 13 mainly includes data acquisition and analysis software.Spectrum for gathering the measurement of photodetector 12.
The measurement result of 0.8eV deep energy level defects in CIGS given below.
CIGS is illustrated into detection means of the present invention and Cleaning Principle by Fig. 1 sample positions, Fig. 1~2 are positioned over.Utilize ripple
A length of 635nm laser excitation CIGS samples, photoluminescence spectra now is measured using monochromator 11 and photodetector 12,
Spectral intensity is I1.(corresponding deep energy level defect energy level is for the laser for being 635nm using wavelength and laser that wavelength is 1550nm
0.8eV, 0.8eV are defect level position and the energy bite of top of valence band) while CIGS sample same positions are irradiated, utilize monochrome
Instrument 11 measures photoluminescence spectra now with photodetector 12, and spectral intensity is I2, as shown in figure 3, I2>I1, explanation
0.8eV deep energy level defect is effective Carrier recombination center.
The protection content of the present invention is not limited to above example.Under the spirit and scope without departing substantially from inventive concept, this
Art personnel it is conceivable that change and advantage be all included in the present invention, and using appended claims as protect
Protect scope.
Claims (8)
1. a kind of pair of light source activation luminescence generated by light detects the device of semiconductor defect, it is characterised in that including：First laser light source
(1), second laser light source (2), semiconductor samples (3), the first lens (4), the first light splitting piece (5), the second light splitting piece (6), anti-
Penetrate mirror (7), the first optical filter (8), the second optical filter (9), the second lens (10), monochromator (11), photodetector (12) and
Computer (13)；The first laser light source (1) is by the first light splitting piece (5) to first lens (4) so as to focus to institute
State semiconductor samples (3) surface, the luminescence generated by light for vitalizing semiconductor sample (3)；The second laser light source (2) passes through
Two light splitting pieces (6) are to first lens (4) so that the semiconductor samples (3) surface is focused to, for making the semiconductor
Deep energy level defect electronic state saturation in sample (3) material；
First optical filter (8) is placed in before monochromator (11) entrance slit, the exciting light for filtering first laser light source (1)
Source spectrum；
Second optical filter (9) is placed in before monochromator (11) entrance slit, the exciting light for filtering second laser light source (2)
Source spectrum；
Second lens (10) are used in luminescence generated by light signal to the entrance slit of monochromator (11) of focusing collector；
The monochromator (11) is used for the spectrum of the luminescence generated by light signal of scanning wavelength scale collection；
The photodetector (12) is used to detect photoluminescence spectra of the monochromator (11) from exit slit outgoing；
The computer (13) is connected with the output of photodetector (12), reads photoluminescence spectra.
2. double light source activation luminescence generated by lights as claimed in claim 1 detect the device of semiconductor defect, it is characterised in that described
The wavelength of first laser light source (1) is in as in the range of 300nm-2000nm, spectrum halfwidth scope is 0.01nm-10nm, and
Photon energy is more than the energy gap of the semiconductor samples (3).
3. double light source activation luminescence generated by lights as claimed in claim 1 detect the device of semiconductor defect, it is characterised in that described
The wavelength of second laser light source (2) is in as in the range of 300nm-2000nm, spectrum halfwidth scope is 0.01nm-10nm, and
Photon energy is adjustable, any deep energy level defect energy level in photon energy and the semiconductor samples (3) and between the energy of valence band
Every identical；The optical maser wavelength and photon energy of first laser light source (1) output are less than the second laser light source (2).
4. double light source activation luminescence generated by lights as claimed in claim 1 detect the device of semiconductor defect, it is characterised in that described
First optical filter (8) only filters the excitation source spectrum of the first laser light source (1), and it is 300nm- that filter wavelength scope, which is in,
In the range of 2000nm, optical filtering spectral half-width is 0.01nm-10nm.
5. double light source activation luminescence generated by lights as claimed in claim 1 detect the device of semiconductor defect, it is characterised in that described
Second optical filter (9) can only filter the excitation source spectrum of the second laser light source (2), and filter wavelength scope, which is in, is
In the range of 300nm-2000nm, optical filtering spectral half-width is 0.01nm-10nm.
6. double light source activation luminescence generated by lights as claimed in claim 1 detect the device of semiconductor defect, it is characterised in that described
Monochromator (11) grating covers the photoluminescence spectra scope of the semiconductor samples (3).
7. double light source activation luminescence generated by lights as claimed in claim 1 detect the device of semiconductor defect, it is characterised in that described
Photodetector (12) spectral response range covers the photoluminescence spectra scope of the semiconductor samples (3).
8. a kind of double light source activation luminescence generated by lights detection semiconductor using the detection means as described in any one of claim 1-7
The detection method of defect, it is characterised in that comprise the following steps：
Step one：Using first laser light source (1) by the first light splitting piece (5) to the first lens (4) so as to focus to semiconductor
Sample (3) surface, the luminescence generated by light for vitalizing semiconductor sample (3)；
Step 2：Using photodetector (12) detection monochromator (11) exit slit outgoing only by the first laser light source
(1) photoluminescence spectra caused by irradiation semiconductor samples (3)；
Step 3：Using the second laser light source (2) by the second light splitting piece (6) to the first lens (4) so as to focus to half
Conductor sample (3) surface, it is identical with the position that first laser light source (1) described in step one focuses to semiconductor samples (3) surface,
For making the deep energy level defect electronic state saturation in semiconductor samples (3) material；
Step 4：Using photodetector (12) detection monochromator (11) the exit slit outgoing by the first laser light
Source (1) and the second laser light source (2) are while irradiate photoluminescence spectra caused by the semiconductor samples (3)；
Step 5：The photoluminescence spectra intensity that step 3 is measured with step 4 is contrasted, if the spectral intensity of step 4 measurement
The spectral intensity measured more than step 3, illustrates in the semiconductor samples (3) and second laser light source (2) light energy pair
The deep energy level defect answered is effective Carrier recombination center, if if the spectral intensity of step 4 measurement is surveyed equal to step 3
The spectral intensity of amount, illustrates deep energy corresponding with second laser light source (2) light energy in the semiconductor samples (3)
Level defect is not effective Carrier recombination center.
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| CN109187349A (en) * | 2018-10-24 | 2019-01-11 | 中国科学院新疆理化技术研究所 | A kind of experimental method improving low-temperature photoluminescence measuring accuracy |
| CN109238969A (en) * | 2018-10-24 | 2019-01-18 | 中国科学院新疆理化技术研究所 | A kind of low-temperature photoluminescence rapidly and efficiently test method |
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| CN108196178B (en) * | 2017-12-28 | 2020-02-14 | 电子科技大学 | Measuring device for surface trap energy level distribution and photoconductive analysis method |
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