CN107026075A - The method that laser annealing prepares carborundum Ohmic contact is strengthened using ion implanting - Google Patents
The method that laser annealing prepares carborundum Ohmic contact is strengthened using ion implanting Download PDFInfo
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- CN107026075A CN107026075A CN201610800022.5A CN201610800022A CN107026075A CN 107026075 A CN107026075 A CN 107026075A CN 201610800022 A CN201610800022 A CN 201610800022A CN 107026075 A CN107026075 A CN 107026075A
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- ohmic contact
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- laser annealing
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- 229910010271 silicon carbide Inorganic materials 0.000 title claims abstract description 47
- 238000000034 method Methods 0.000 title claims abstract description 46
- 238000005224 laser annealing Methods 0.000 title claims abstract description 23
- 229910052751 metal Inorganic materials 0.000 claims abstract description 18
- 239000002184 metal Substances 0.000 claims abstract description 18
- 230000015572 biosynthetic process Effects 0.000 claims abstract description 11
- 239000013078 crystal Substances 0.000 claims abstract description 6
- 230000002708 enhancing effect Effects 0.000 claims description 9
- 229910052782 aluminium Inorganic materials 0.000 claims description 5
- 239000000463 material Substances 0.000 claims description 5
- 238000004544 sputter deposition Methods 0.000 claims description 4
- 229910008599 TiW Inorganic materials 0.000 claims description 3
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 claims description 3
- 229910052802 copper Inorganic materials 0.000 claims description 3
- 230000008020 evaporation Effects 0.000 claims description 3
- 238000001704 evaporation Methods 0.000 claims description 3
- 230000001678 irradiating effect Effects 0.000 claims description 3
- 229910052759 nickel Inorganic materials 0.000 claims description 3
- 229910052697 platinum Inorganic materials 0.000 claims description 3
- 229910052709 silver Inorganic materials 0.000 claims description 3
- 229910052718 tin Inorganic materials 0.000 claims description 3
- 229910052719 titanium Inorganic materials 0.000 claims description 3
- 229910052721 tungsten Inorganic materials 0.000 claims description 3
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 claims description 2
- 229910052737 gold Inorganic materials 0.000 claims description 2
- 239000010931 gold Substances 0.000 claims description 2
- 238000002347 injection Methods 0.000 abstract description 7
- 239000007924 injection Substances 0.000 abstract description 7
- 230000004913 activation Effects 0.000 abstract description 5
- 238000004886 process control Methods 0.000 abstract description 2
- 150000002500 ions Chemical class 0.000 description 25
- 238000000137 annealing Methods 0.000 description 7
- 230000008569 process Effects 0.000 description 7
- 229940090044 injection Drugs 0.000 description 6
- 239000000758 substrate Substances 0.000 description 5
- 230000008901 benefit Effects 0.000 description 3
- 238000005516 engineering process Methods 0.000 description 3
- 238000002360 preparation method Methods 0.000 description 3
- 239000004065 semiconductor Substances 0.000 description 3
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 2
- 229910052785 arsenic Inorganic materials 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 229910021645 metal ion Inorganic materials 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- 239000010703 silicon Substances 0.000 description 2
- 230000009286 beneficial effect Effects 0.000 description 1
- 238000003763 carbonization Methods 0.000 description 1
- 230000015556 catabolic process Effects 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 230000005684 electric field Effects 0.000 description 1
- 239000000686 essence Substances 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 238000001465 metallisation Methods 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000001259 photo etching Methods 0.000 description 1
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 1
- 239000002689 soil Substances 0.000 description 1
- 239000000243 solution Substances 0.000 description 1
- 230000006641 stabilisation Effects 0.000 description 1
- 238000011105 stabilization Methods 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 238000006467 substitution reaction Methods 0.000 description 1
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/0445—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising crystalline silicon carbide
- H01L21/048—Making electrodes
- H01L21/0485—Ohmic electrodes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/43—Electrodes ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
- H01L29/45—Ohmic electrodes
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- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Manufacturing & Machinery (AREA)
- Chemical & Material Sciences (AREA)
- Crystallography & Structural Chemistry (AREA)
- Ceramic Engineering (AREA)
- Electrodes Of Semiconductors (AREA)
Abstract
The invention discloses the method that laser annealing prepares carborundum Ohmic contact is strengthened using ion implanting, comprise the following steps：Step one：The position that Ohmic contact is formed needed for SiC carries out ion implanting；Step 2：Metal ohmic contact is deposited in the SiC crystal column surfaces；Step 3：Laser is used to be irradiated to prepare Ohmic contact to metal ohmic contact；Increase the doping concentration in SiC ohmic contact region using ion implanting, Ohmic contact is formed on SiC while activation injection ion by laser annealing.By this method reduce the process control issues of laser annealing technique formation Ohmic contact, ohmic contact resistance rate is reduced, so as to improve the performance of SiC device.
Description
Technical field
Field is manufactured the present invention relates to silicon carbide device, and in particular to carbonization is prepared using ion implanting enhancing laser annealing
The method of silicon Ohmic contact.
Background technology
As third generation semi-conducting material, carborundum (SiC) has high energy gap (2.4-3.3eV), high thermal conductivity
Rate (5-7Wcm-1K-1), high critical breakdown electric field (2 × 106Vcm-1 of ＞), the electron mobility suitable with silicon (Si),
The a series of advantages such as chemical property stabilization, high rigidity, rub resistance and radioresistance, high temperature, high frequency, it is high-power in terms of have
And be widely applied.
Ohmic contact is a critical process in semiconductor devices preparation process, and its purpose is prepared on gold half and contacted
Position forms linear electric current and voltage relationship, and ensures that contact resistance is sufficiently small so that not influenceing the conducting of device special
Property.Ohmic contact on carbofrax material is general after the completion of Metal deposition, is prepared using high annealing method.Due to carborundum
On device prepared by Ohmic contact to need high-temperature annealing process, and high-temperature annealing process can be to the material at other positions of semiconductor devices
Produce negative influence (such as：Schottky metal, metal electrode etc.), therefore in order to reduce the influence of high annealing, Ohmic contact work
Skill needs still other technique to be completed before carrying out., it is necessary to first in back Ohmic contact such as in SiC schottky device preparation process
After the completion of technique, positive schottky metal technique could be carried out.
Because ohmic contact craft can introduce metal ion, and along with high-temperature annealing process, therefore it there is metal
Ionic soil device, reduces the hidden danger of device performance.On the other hand, in traditional SiC device preparation process, due to back ohm
Because front also needs to carry out the processes such as photoetching, etching after the completion of contact process, it is therefore desirable to ensure certain wafer flatness.And
In order to reduce the conducting resistance of device, it usually needs carry out substrate thinning processing to wafer, and after being ground due to stress
The set-back rise of device is normally resulted in, therefore the SiC device that traditional thermal annealing is prepared prepared by ohmic contact craft is usual
Substrate thinning technique can not be carried out.
Laser annealing forms ohmic contact craft and then successfully avoids above mentioned problem to component influences.This is due to laser
It is Local Heating Process when handling material, influence very little when being annealed to Ohmic contact position to other positions,
It therefore, it can carry out ohmic contact craft after other techniques are completed, it is to avoid pollution of the metal ion to device, can also
The conducting resistance of device is reduced by substrate thinning technique.
However, due to the homogeneity question of laser facula, laser annealing forms Ohmic contact on SiC and is faced with technique control
The problem of property processed is poor, ohmic contact resistance rate high, ohmic contact resistance rate is uneven.
The content of the invention
For problem above, carborundum Europe is prepared using ion implanting enhancing laser annealing effect the invention provides one kind
The method of nurse contact.Increase the doping concentration in SiC ohmic contact region using ion implanting, injected by laser annealing in activation
Ohmic contact is formed while ion on SiC.Pass through the technique that this method reduce laser annealing technique formation Ohmic contact
Control problem, reduces ohmic contact resistance rate, so as to improve the performance of SiC device, effectively can solve in background technology
The problem of.
To achieve these goals, the technical solution adopted by the present invention is as follows：Laser annealing system is strengthened using ion implanting
The method of standby carborundum Ohmic contact, comprises the following steps：
Step one：The position that Ohmic contact is formed needed for SiC carries out ion implanting；
Step 2：Metal ohmic contact is deposited in the SiC crystal column surfaces；
Step 3：Laser is used to be irradiated to prepare Ohmic contact to metal ohmic contact.
Wherein, the SiC material described in step one, crystal formation can be 4H-SiC or 6H-SiC.
Wherein, the position doping type that Ohmic contact is formed needed for step is a kind of can be n-type doping or p-type
Doping.
Wherein, step one inject ion formation doping type it is identical with original doping type.Such as：If Ohmic contact
Position was n-type doping originally, and injection ion is then to be one or several kinds of co-implanted in N, P, As etc.；If Ohmic contact position is former
Adulterated for p-type, injection ion is then to be one or several kinds of co-implanted in B, Al etc.；Ion implanting can be monoergic ion
Injection can also be the ion implanting of multiple energies.
Wherein, the heavily doped region depth bounds formed after ion implanting described in step one is 0.01-1 μm, and heavily doped region is dense
Degree scope is 1E17cm-3-5E21cm-3.
Wherein, the metal ohmic contact described in step 2 can be Ti, Ni, Pt, TiW, Si, TiN, Al, Ag, Cu, W etc.
One or several kinds in metal, its growing method can be sputtering, evaporation, deposit etc..
Wherein, the laser employed in the laser irradiating method described in step 3 can be that laser pulse duration range can
Be delicate, receive, psec, femto-second laser, the wave-length coverage of laser is 100nm-1mm.
Wherein, laser scanning methodses can be pulse scanning or multiple-pulse scanning in step 3.
Beneficial effects of the present invention：
The present invention increases the doping concentration in SiC ohmic contact region using ion implanting, is noted by laser annealing in activation
Ohmic contact is formed on SiC while entering ion.By the work that this method reduce laser annealing technique formation Ohmic contact
Skill control problem, reduces ohmic contact resistance rate, so as to improve the performance of SiC device.
Brief description of the drawings
Fig. 1 is a kind of schematic diagram in the embodiment of the present invention.
Fig. 2 is a kind of schematic diagram in the embodiment of the present invention.
Embodiment
In order to make the purpose , technical scheme and advantage of the present invention be clearer, with reference to embodiments, to the present invention
It is further elaborated.It should be appreciated that the specific embodiments described herein are merely illustrative of the present invention, it is not used to
Limit the present invention.
Embodiment：
First, it is 0.2 μm by ion implanting N formation depth, doping concentration is in the SiC substrate bottom of N-type
1E20cm-3 heavily doped region, the position doping type of required formation Ohmic contact can be that n-type doping or p-type are mixed
Miscellaneous, the doping type for injecting ion formation is identical with original doping type.Such as：If Ohmic contact position was n-type doping originally,
Ion is injected then to be one or several kinds of co-implanted in N, P, As etc.；If Ohmic contact position be originally p-type doping, inject from
It is sub then to be one or several kinds of co-implanted in B, Al etc.；Ion implanting can be that monoergic ion implanting can also be multiple
The heavily doped region depth bounds formed after the ion implanting of energy, the ion implanting is 0.01-1 μm, heavily doped region concentration model
Enclose for 1E17cm-3-5E21cm-3, as shown in Figure 1.
Then, the Ni that a layer thickness is 100nm is sputtered by sputtering technology in crystal column surface and is used as metal ohmic contact, institute
The metal ohmic contact stated can be the one or several kinds in the metals such as Ti, Ni, Pt, TiW, Si, TiN, Al, Ag, Cu, W, its
Growing method can be sputtering, evaporation, deposit etc., as shown in Figure 2.
Finally, use wavelength for 532 nanosecond laser, pulse width is 10ns, and pulse energy density is 3.6J/cm2
Pulse laser irradiation is carried out to metal ohmic contact surface, activation injection ion and forms the Europe of metal and SiC substrate
Nurse is contacted, the laser employed in described laser irradiating method can be laser pulse duration range can be delicate, receive, skin
Second, femto-second laser, the wave-length coverage of laser is 100nm-1mm, laser scanning methodses can be pulse scanning or
Multiple-pulse is scanned.
Based on above-mentioned, it is an advantage of the current invention that the present invention increases the doping in SiC ohmic contact region using ion implanting
Concentration, Ohmic contact is formed by laser annealing while activation injection ion on SiC.By this method reduce laser
The process control issues of annealing process formation Ohmic contact, reduce ohmic contact resistance rate, so as to improve the property of SiC device
Energy.
The foregoing is merely illustrative of the preferred embodiments of the present invention, is not intended to limit the invention, all essences in the present invention
Any modifications, equivalent substitutions and improvements made within refreshing and principle etc., should be included in the scope of the protection.
Claims (8)
1. the method that laser annealing prepares carborundum Ohmic contact is strengthened using ion implanting, it is characterised in that including following step
Suddenly：
Step one：The position that Ohmic contact is formed needed for SiC carries out ion implanting；
Step 2：Metal ohmic contact is deposited in the SiC crystal column surfaces；
Step 3：Laser is used to be irradiated to prepare Ohmic contact to metal ohmic contact.
2. the method that use ion implanting enhancing laser annealing according to claim 1 prepares carborundum Ohmic contact, its
It is characterised by, the SiC material described in the step one, crystal formation can be 4H-SiC or 6H-SiC.
3. the method that use ion implanting enhancing laser annealing according to claim 1 prepares carborundum Ohmic contact, its
It is characterised by, the position doping type that Ohmic contact is formed needed for the step one can be n-type doping or p-type
Doping.
4. the method that use ion implanting enhancing laser annealing according to claim 1 prepares carborundum Ohmic contact, its
It is characterised by, the doping type that the step one injects ion formation is identical with original doping type.
5. the method that use ion implanting enhancing laser annealing according to claim 1 prepares carborundum Ohmic contact, its
It is characterised by, the heavily doped region depth bounds formed after ion implanting described in the step one is 0.01-1 μm, and heavily doped region is dense
Degree scope is 1E17cm-3-5E21cm-3。
6. the method that use ion implanting enhancing laser annealing according to claim 1 prepares carborundum Ohmic contact, its
It is characterised by, the metal ohmic contact described in the step 2 can be Ti, Ni, Pt, TiW, Si, TiN, Al, Ag, Cu, W gold
One or several kinds in category, its growing method can be sputtering, evaporation or deposit.
7. the method that use ion implanting enhancing laser annealing according to claim 1 prepares carborundum Ohmic contact, its
It is characterised by, the laser employed in laser irradiating method described in the step 3 can be that laser pulse duration range can
Be delicate, receive, psec, femto-second laser, the wave-length coverage of laser is 100nm-1mm.
8. the method that use ion implanting enhancing laser annealing according to claim 1 prepares carborundum Ohmic contact, its
It is characterised by, laser scanning methodses can be pulse scanning or multiple-pulse scanning in the step 3.
Priority Applications (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201610800022.5A CN107026075A (en) | 2016-08-31 | 2016-08-31 | The method that laser annealing prepares carborundum Ohmic contact is strengthened using ion implanting |
| PCT/CN2017/079844 WO2018040562A1 (en) | 2016-08-31 | 2017-04-10 | Method for preparing silicon carbide ohmic contacts by using ion implantation enhanced laser annealing |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201610800022.5A CN107026075A (en) | 2016-08-31 | 2016-08-31 | The method that laser annealing prepares carborundum Ohmic contact is strengthened using ion implanting |
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|---|---|
| CN107026075A true CN107026075A (en) | 2017-08-08 |
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| CN201610800022.5A Pending CN107026075A (en) | 2016-08-31 | 2016-08-31 | The method that laser annealing prepares carborundum Ohmic contact is strengthened using ion implanting |
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| CN (1) | CN107026075A (en) |
| WO (1) | WO2018040562A1 (en) |
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN107706096A (en) * | 2017-11-02 | 2018-02-16 | 北京世纪金光半导体有限公司 | A kind of silicon carbide power chip back is thinned and prepared the method and product of Ohmic contact |
| CN109037041A (en) * | 2018-09-21 | 2018-12-18 | 黄兴 | A kind of preparation method and device of the Ohmic contact of silicon carbide |
| CN113178414A (en) * | 2021-03-10 | 2021-07-27 | 中国科学院微电子研究所 | Forming method of silicon carbide ohmic contact structure and preparation method of MOS transistor |
| CN113345806A (en) * | 2021-04-23 | 2021-09-03 | 北京华卓精科科技股份有限公司 | Laser annealing method of SiC-based semiconductor |
| CN113707546A (en) * | 2021-08-16 | 2021-11-26 | 成都莱普科技有限公司 | Method for forming ohmic contact of semiconductor device by selective laser annealing |
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| CN113410138B (en) * | 2021-06-15 | 2023-06-30 | 西安微电子技术研究所 | Low-leakage SiC Schottky diode and manufacturing method thereof |
| CN113745319B (en) * | 2021-09-06 | 2024-07-23 | 扬州扬杰电子科技股份有限公司 | Silicon carbide semiconductor device and processing method |
| CN114414747B (en) * | 2022-03-14 | 2022-08-12 | 中芯越州集成电路制造(绍兴)有限公司 | Verification method for laser annealing uniformity |
| CN115786863A (en) * | 2022-11-30 | 2023-03-14 | 山东省科学院新材料研究所 | Electro-optical element with potassium tantalate-niobate crystal and electrode in ohmic contact and preparation method thereof |
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| JP6222771B2 (en) * | 2013-11-22 | 2017-11-01 | 国立研究開発法人産業技術総合研究所 | Method for manufacturing silicon carbide semiconductor device |
| DE112014003658T5 (en) * | 2014-04-18 | 2016-05-12 | Fuji Electric Co., Ltd. | Method for producing a semiconductor device |
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- 2017-04-10 WO PCT/CN2017/079844 patent/WO2018040562A1/en active Application Filing
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| US20050145869A1 (en) * | 2003-11-12 | 2005-07-07 | Slater David B.Jr. | Light emitting devices with self aligned ohmic contact and methods of fabricating same |
| US20060035449A1 (en) * | 2004-08-10 | 2006-02-16 | Yoo Woo S | Method of forming ultra shallow junctions |
| CN103907176A (en) * | 2011-12-02 | 2014-07-02 | 住友电气工业株式会社 | Semiconductor device fabrication method |
Cited By (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN107706096A (en) * | 2017-11-02 | 2018-02-16 | 北京世纪金光半导体有限公司 | A kind of silicon carbide power chip back is thinned and prepared the method and product of Ohmic contact |
| CN107706096B (en) * | 2017-11-02 | 2024-03-15 | 芯合半导体(合肥)有限公司 | Method for thinning back of silicon carbide power chip and preparing ohmic contact and product |
| CN109037041A (en) * | 2018-09-21 | 2018-12-18 | 黄兴 | A kind of preparation method and device of the Ohmic contact of silicon carbide |
| CN113178414A (en) * | 2021-03-10 | 2021-07-27 | 中国科学院微电子研究所 | Forming method of silicon carbide ohmic contact structure and preparation method of MOS transistor |
| CN113345806A (en) * | 2021-04-23 | 2021-09-03 | 北京华卓精科科技股份有限公司 | Laser annealing method of SiC-based semiconductor |
| CN113345806B (en) * | 2021-04-23 | 2024-03-05 | 北京华卓精科科技股份有限公司 | Laser annealing method of SiC-based semiconductor |
| CN113707546A (en) * | 2021-08-16 | 2021-11-26 | 成都莱普科技有限公司 | Method for forming ohmic contact of semiconductor device by selective laser annealing |
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| WO2018040562A1 (en) | 2018-03-08 |
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Application publication date: 20170808 |
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