[go: up one dir, main page]
More Web Proxy on the site http://driver.im/

CN107024185A - A kind of basal surface type measuring method and measurement apparatus - Google Patents

A kind of basal surface type measuring method and measurement apparatus Download PDF

Info

Publication number
CN107024185A
CN107024185A CN201610069182.7A CN201610069182A CN107024185A CN 107024185 A CN107024185 A CN 107024185A CN 201610069182 A CN201610069182 A CN 201610069182A CN 107024185 A CN107024185 A CN 107024185A
Authority
CN
China
Prior art keywords
substrate
base station
value
matrix
measurement
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
CN201610069182.7A
Other languages
Chinese (zh)
Other versions
CN107024185B (en
Inventor
韩春燕
李术新
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Shanghai Micro Electronics Equipment Co Ltd
Original Assignee
Shanghai Micro Electronics Equipment Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Shanghai Micro Electronics Equipment Co Ltd filed Critical Shanghai Micro Electronics Equipment Co Ltd
Priority to CN201610069182.7A priority Critical patent/CN107024185B/en
Publication of CN107024185A publication Critical patent/CN107024185A/en
Application granted granted Critical
Publication of CN107024185B publication Critical patent/CN107024185B/en
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Classifications

    • GPHYSICS
    • G01MEASURING; TESTING
    • G01BMEASURING LENGTH, THICKNESS OR SIMILAR LINEAR DIMENSIONS; MEASURING ANGLES; MEASURING AREAS; MEASURING IRREGULARITIES OF SURFACES OR CONTOURS
    • G01B11/00Measuring arrangements characterised by the use of optical techniques
    • G01B11/24Measuring arrangements characterised by the use of optical techniques for measuring contours or curvatures
    • G01B11/2441Measuring arrangements characterised by the use of optical techniques for measuring contours or curvatures using interferometry

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Length Measuring Devices By Optical Means (AREA)

Abstract

The present invention relates to a kind of basal surface type measuring method and measurement apparatus, this method includes S1:Substrate is uploaded to base station, the position for measuring base station by base station position-measurement device obtains base station positional value, open focusing and leveling system, m × n hot spot matrix is incided in substrate, hot spot matrix column is away from for d1, and line-spacing is d2, wherein n >=3, m >=3;S2:Scanning pattern is planned in substrate, mobile base station, hot spot matrix is set to be moved along scanning pattern opposed substrate platform, and the substrate location value that each sub-light spot is measured in hot spot matrix when recording mobile every time, the step-length that wherein hot spot matrix is moved in the X direction is d1, and the step-length moved in the Y direction is d2;S3:All substrate location values that step S2 neutron hot spots are measured are arranged, and according to substrate location value and base station positional value, substrate location value is modified, the face type of substrate is calculated finally according to revised substrate location value.Change so as to eliminate base station height and measured value caused by lateral attitude.

Description

A kind of basal surface type measuring method and measurement apparatus
Technical field
The present invention relates to projection lithography technical field, more particularly to a kind of basal surface type measuring method and measurement dress Put.
Background technology
Projection lithography technology has been widely used for integrated circuit fabrication process, and the technology is filled by optical projection Exposure is put, the mask graph of design is transferred on photoresist.A kind of emerging vertical controlling party in litho machine Method is basal surface type mensuration, i.e.,:By focusing and leveling system, measurement obtains basal surface type in advance, and according to Face offset calculates the vertical setting value of base station of each exposure field, the exposure field in substrate is constantly in photoetching Within the depth of focus of machine objective system, so that the figure on mask plate is ideally transferred in substrate.
Improved constantly with the resolution ratio of projection mask aligner, depth of focus constantly reduces, control essence vertical to litho machine The requirement of degree is also increasingly improved, and the requirement to basal surface type measurement accuracy is also increased therewith.It is high-precision at present Projection mask aligner's system is using the motion of base station bearing basement, while recording the vertical sensor of base station and tune The method of burnt leveling system measured value obtains basal surface type information, but due to the benchmark of the vertical sensor of base station Be present processing and manufacturing error and alignment error in face (marble upper surface or interferometer level crossing surface), will lead Cause to measure and above-mentioned error is contained in obtained basal surface type, influence vertical control accuracy simultaneously to ultimately result in exposure Field defocus.
A kind of non-contact tri-dimensional facial type measurement is disclosed in such as Publication No. CN101105389A Chinese patent Device, its work top is X to motion on pedestal, and Z-direction moving cell does Y-direction and Z on portal frame To motion.Measured and be placed on work top using the laser measurement sensor being fixed on Z-direction moving cell Testee, but because pedestal and portal frame have certain error in flatness, the error can be direct The face type of testee is influenceed, measurement accuracy is not high;And use single laser measurement sensor, measurement efficiency It is low.
Therefore, a kind of basal surface type with higher measurement accuracy and faster measuring speed how is provided to survey Amount method and measurement apparatus, are those skilled in the art's technical problems urgently to be resolved hurrily.
The content of the invention
The present invention provides a kind of basal surface type measuring method and measurement apparatus, to solve above-mentioned technical problem.
In order to solve the above technical problems, the present invention provides a kind of basal surface type measuring method, including:
S1:Substrate is uploaded to base station, the position of the base station is measured by base station position-measurement device Put and obtain base station positional value, open focusing and leveling system, m × n hot spot matrix is incided into the substrate On, the hot spot matrix column is away from for d1, and line-spacing is d2, wherein n >=3, m >=3;
S2:Plan scanning pattern on the substrate, the mobile base station, make the hot spot matrix along The scanning pattern is moved relative to the base station, and when recording mobile every time in the hot spot matrix per height The substrate location value that hot spot is measured, wherein the step-length that Spot Moment battle array is moved in the X direction is d1, in Y The step-length that side is moved up is d2;
S3:All substrate location values that sub-light spot is measured described in step S2 are arranged, and according to substrate position Value and the base station positional value are put, the substrate location value is modified, finally according to revised institute State the face type that substrate location value calculates the substrate.
It is preferred that the step S3 comprises the following steps:
S31:By the hot spot matrix along the scanning pattern move when, the position of each sub- facula measurement Referred to as measurement point is put, substrate location value of the sub-light spot in the measurement point is arranged, then with the substrate The measurement point of upper center or neighbouring center position is reference point, will centered on the reference point point or M × n of the neighbouring central point measurement point is as calculating matrix, and by the substrate location value of the measurement point It is fitted to reference plane;
S32:The substrate location value of the measurement point covered according to the calculating matrix and the base station position Value, calculates the height of the relatively described reference plane of each measurement point in the reference plane and the calculating matrix, will Result of calculation is transformed under substrate coordinate system, obtains position ginseng of the measurement point under the substrate coordinate system Number;
S33:The calculating matrix are moved along Y-axis positive direction with step-length d1, by presently described calculating square The point repeated in the measurement point that the measurement point of battle array covering is covered with previously described calculating matrix is referred to as known point, not The point repeated is referred to as unknown point, utilizes known point reference plane corresponding in previously described calculating matrix Height correct substrate location value of the known point in presently described calculating matrix;
S34:The substrate location value of the revised known point is fitted to new reference plane, calculate described in not Know the height of a little relatively new reference plane, result of calculation is carried out to be converted to the unknown point in the substrate Location parameter under coordinate system;
S35:Return to step S33, the substrate location value of whole measurement points in Y-axis positive direction is modified, Obtain location parameter of all measurement points under the substrate coordinate system in Y-axis positive direction;
S36:The calculating matrix are respectively along Y-axis negative direction, parallel to X-axis positive direction, parallel to X-axis Negative direction is moved, according to the substrate location of all measurement points of method amendment described in step S33 to S35 Value, obtains location parameter of the measurement point under substrate coordinate system, wherein the calculating matrix are along parallel to X The step-length of direction of principal axis movement is d2;
S37:The substrate is drawn using all location parameter of the measurement point under the substrate coordinate system Face type.
It is preferred that comprising the following steps in step S32:
S321:Substrate level value (the Spot of the measurement point covered according to the calculating matrixij_x、Spotij_ y), With substrate level value FLS_Zij, and base station height value Z_WS, calculate the height value Z_ref of the reference plane With tilting value (Rx_ref, Ry_ref), wherein i=0,1 ..., m, j=0,1 ..., n:
S322:Calculate the height of the relatively described reference plane of each measurement point in the calculating matrix Spotij_d0
S323:Result of calculation is transformed under the substrate coordinate system, the institute of the calculating matrix covering is obtained There is floor parameter of the measurement point under the substrate coordinate system:
Wherein, (xS, yS) represent level ginseng of the S measurement point under the substrate coordinate system in the substrate Number, zSRepresent height parameter of the S measurement point under the substrate coordinate system.
It is preferred that in the step S33, using the known point in previously described calculating matrix it is corresponding The height of the reference plane correct substrate location value of the known point in presently described calculating matrix For:
Wherein:
FLS_Zl,kThe substrate level value of the measurement point arranged for l rows kth in presently described calculating matrix;
FLS_Zl,kThe revised substrate level of the measurement point arranged for l rows kth in presently described calculating matrix Value;
Spotp,q_djumpIt is the calculating matrix along after the ump stepping of jth of Y-axis positive direction, the calculating matrix The height of the corresponding reference plane when measurement point of middle pth row q row is with respect to this stepping.
It is preferred that carrying out result of calculation described in step S34 is converted to the unknown point in the base Location parameter under the coordinate system of bottom, method is as follows:
Wherein, (xS, yS) horizontal parameters of the S measurement point under substrate coordinate system in the substrate are represented, zSRepresent height parameter of the S measurement point under substrate coordinate system in the substrate;(X_WS, Y_WS) is The base station level value of the base station.
It is preferred that the scanning pattern is:Adjacent two arrange the serpentine path of sequentially end to end formation.
Present invention also offers a kind of substrate surface type measurement dress for realizing basal surface type measuring method as described above Put, including base station, be fixed in the base station substrate, for measuring the dry of the base station position Interferometer component, focusing and leveling system and data processing unit, the focusing and leveling system is by m × n hot spot Matrix is incided in the substrate, wherein n >=3, m >=3, and the hot spot matrix is carried out to the surface of the substrate Step-scan, measurement obtains the substrate location value of some substrates, wherein Spot Moment battle array is in X-direction On step-length and the hot spot matrix column away from equal, step-length in the Y direction and the row of the hot spot matrix Away from equal, some substrate location values and institute that the data processing unit is measured according to the hot spot matrix The base station positional value that interferometer component is measured is stated, the substrate location value is modified, finally according to repairing The substrate location value after just calculates the face type of the substrate.
It is preferred that the interferometer component includes Z-direction interferometer, X side's mirror, Y side's mirror, 45 ° of mirrors and Z To strip mirror, X side's mirror and Y side's mirror are attached on two adjacent side elevations of the base station respectively, 45 ° of mirrors are located at the bottom of X side's mirror, and the Z-direction strip mirror is located at the top of the base station, The reference light vertical incidence that the Z-direction interferometer is sent is incident after reflection to X side's mirror and Y side's mirror To the Z-direction interferometer;The measurement light that the Z-direction interferometer is sent is incident to 45 ° of mirrors, deflects 90 ° After be incident to the Z-direction strip mirror, finally along backtracking to the Z-direction interferometer.
It is preferred that the substrate is fixed in the base station by sucker.
Present invention also offers the basal surface type survey that another realizes basal surface type measuring method as described above Measure device, including base station, be fixed in the base station substrate, for measuring the base station position Grating scale component, focusing and leveling system and data processing unit, the focusing and leveling system is by m × n light Spot matrix is incided in the substrate, wherein n >=3, m >=3, and the hot spot matrix enters to the surface of the substrate Row step-scan, measurement obtains the substrate location value of some substrates, wherein Spot Moment battle array is in X side Upward step-length is with the hot spot matrix column away from equal, step-length in the Y direction and the hot spot matrix Line-spacing is equal, some substrate location values that the data processing unit is measured according to the hot spot matrix and The base station positional value that the grating scale component is measured, is modified to the substrate location value, finally according to The revised substrate location value calculates the face type of the substrate.
Compared with prior art, the present invention is provided basal surface type measuring method and measurement apparatus, this method bag Include S1:Substrate is uploaded to base station, the position for measuring base station by base station position-measurement device is obtained Base station positional value, opens focusing and leveling system, m × n hot spot matrix is incided in substrate, Spot Moment The row of battle array are away from for d1, and line-spacing is d2, wherein n >=3, m >=3;S2:Scanning pattern is planned in substrate, is moved Dynamic base station, hot spot when making hot spot matrix be moved along scanning pattern opposed substrate platform, and recording mobile every time The substrate location value that each sub-light spot is measured in matrix, the step-length that wherein hot spot matrix is moved in the X direction is D1, the step-length moved in the Y direction is d2;S3:Arrange all substrates position that step S2 sub-light spots are measured Value is put, and according to substrate location value and base station positional value, substrate location value is modified, finally according to Revised substrate location value calculates the face type of substrate.So, in adjacent twice sweep measurement, substrate On always there is at least six hot spot to be repeatedly measured, can be eliminated due to substrate according to the front and rear information measured twice Measured value caused by the change of platform height and lateral attitude changes, and then obtains accurate basal surface type information, This mode measurement accuracy is higher, and measuring speed is faster.
Brief description of the drawings
Fig. 1 is the structural representation of the basal surface type measurement apparatus of the embodiment of the present invention one;
Fig. 2 is the layout of interferometer in the embodiment of the present invention one;
Fig. 3 is the hot spot layout in the embodiment of the present invention one;
Fig. 4 is the measuring route schematic diagram of the embodiment of the present invention one;
Fig. 5 is measuring principle figure when having eyeglass face type without basal surface type in the embodiment of the present invention one;
Fig. 6 is measuring principle figure when having basal surface type without eyeglass face type in the embodiment of the present invention one;
Fig. 7 has measuring principle figure during basal surface type for existing eyeglass face type in the embodiment of the present invention one again;
Fig. 8 be the embodiment of the present invention one in calculate path schematic diagram;
Fig. 9 a~9d is followed successively by the embodiment of the present invention one along Y-axis forward direction, Y-axis negative sense, X-axis negative sense, X Axle negative sense calculates path schematic diagram when scanning;
Figure 10 is the flow chart of basal surface type measuring method in the embodiment of the present invention one;
Figure 11 is the structural representation of the basal surface type measurement apparatus of the embodiment of the present invention two.
In figure:10- base stations, 20- substrates, 31-Z to interferometer, 32-X side's mirror, 33-Y side's mirror, 34-45 ° Mirror, 35-Z are to strip mirror, 40- focusing and levelings system, 50- grating scales component, 60- Dali Shitai County.
Embodiment
In order to facilitate the understanding of the purposes, features and advantages of the present invention, it is right below in conjunction with the accompanying drawings The embodiment of the present invention is described in detail.It should be noted that, accompanying drawing of the present invention is using simplification Form and use non-accurately ratio, only to it is convenient, lucidly aid in illustrating the mesh of the embodiment of the present invention 's.
Embodiment one
The invention provides a kind of basal surface type measurement apparatus, as depicted in figs. 1 and 2, including base station 10, Be fixed in the base station 10 substrate 20 (it is preferred that the substrate 20 be fixed on by sucker it is described In base station 10), interferometer component, focusing and leveling system 40 for measuring the position of base station 10 And data processing unit (not shown), the focusing and leveling system 40 incides m × n hot spot matrix In the substrate 20, wherein n >=3, m >=3, the hot spot matrix carries out stepping to the surface of the substrate 20 Scanning, measurement obtains the substrate location value of some substrates 20, wherein Spot Moment battle array is in the X direction Step-length and the hot spot matrix column away from equal, step-length in the Y direction and the line-spacing of the hot spot matrix It is equal, some substrate location values that the data processing unit is measured according to the hot spot matrix and described The base station positional value that interferometer component is measured, is modified to the substrate location value, finally according to amendment The substrate location value afterwards calculates the face type of the substrate 20.
It is preferred that please continue to refer to Fig. 1 and Fig. 2, the interferometer component includes Z-direction interferometer 31, X Square mirror 32, Y side's mirror 33,45 ° of mirrors 34 and Z-direction strip mirror 35, X side's mirror 32 and Y side's mirror 33 It is attached to respectively on two adjacent side elevations of the base station 10,45 ° of mirrors 34 are located at the X side The bottom of mirror 32, the Z-direction strip mirror 35 is located at the top of the base station 10, the Z-direction interferometer The 31 reference light vertical incidence sent are incident to described after reflection to X side's mirror 32 and Y side's mirror 33 Z-direction interferometer 31;The measurement light that the Z-direction interferometer 31 is sent is incident to 45 ° of mirrors 34, deflection The Z-direction strip mirror 35 is incident to after 90 °, finally along backtracking to the Z-direction interferometer 31.
Please emphasis refer to Fig. 2, when base station 10 is moved in X direction, the measurement light meeting of Z-direction interferometer 31 The diverse location of Z-direction strip mirror 35 is incided, therefore the face type of Z-direction strip mirror 35 can influence Z-direction to interfere The measured value of instrument 31, referred to as XTZ;The face type of Y side's mirror 33 can also influence Rx measured value simultaneously, claim For XRX;Similarly, when base station 10 is moved along Y-direction, the measurement light of Z-direction interferometer 31 can be incident To the diverse location of 45 ° of mirrors 34, reference light can incide the diverse location of X side's mirror 32, therefore 45 ° of mirrors 34 and the face type of X side's mirror 32 can also influence the measured value of Z-direction interferometer 31, referred to as YTZ;While X The face type of square mirror 32 can also influence Ry measured value, referred to as YRY, XTZ, YTZ, XRX and YRY Characterize influence of the base station 10 when XY directions are moved to vertical Three Degree Of Freedom Z, Rx, Ry.In order to obtain The basal surface type measurement result of higher precision is obtained, it is necessary to remove XTZ, YTZ, XRX in actual measured value With the influence of YRY opposites type, but limited by measuring condition, be difficult accurately to measure under normal circumstances XTZ, YTZ, XRX and YRY actual value.
In the present embodiment, the upper surface of substrate 20 is incident to focusing and leveling system 40 and forms 9 sons Exemplified by hot spot, i.e. n=3, m=3, the hot spot layout of focusing and leveling system 40 are as shown in figure 3, X is to phase Adjacent two sub-light spot spacing are d1, and the adjacent two sub-lights spot spacing of Y-direction is d2, during measurement base station 10 can six from By degree movement, it is using X to step pitch as d1, and Y-direction step pitch is that d2 does stepping or scanning motion, passes through such as Fig. 4 Shown paths planning method makes measurement point be covered with whole substrate 20.Base station 10 is recorded in each measurement point 9 sub- hot spots in X, Y, Z measured value (X_WS, Y_WS, Z_WS) and focusing and leveling system 40 Measured value (FLS_Z1、FLS_Z2……FLS_Z9)。
Above-mentioned hot spot layout can be met always has 6 points repeatedly to be surveyed in adjacent measurement twice in substrate 20 The demand of amount.In measuring twice, basal surface type is invariant, and it is Z-direction to cause the reason for measured value changes The eyeglass face type of interferometer 31.Fig. 5 is measuring principle figure when having eyeglass face type without basal surface type after simplifying, As illustrated, when substrate 20 is moved in X-direction or Y-direction, although the posture of substrate 20 is different, but It is the total (l1 point-blank of measurement point in substrate 20 (M1, M2, M3 or M1 ', M2 ', M3 ') Or l2);Fig. 6 is measuring principle figure when having basal surface type without eyeglass face type after simplifying, as illustrated, M3 Relative rectilinear l1 distance is equal with M3 ' relative rectilinears l2 distance, not with the horizontal level of base station 10 Movement and change, by that analogy, in substrate 20 institute a little relative to measurement point M1 (M1 ') and M2 (M2 ') The height for the reference line being linked to be is changeless, and this part is basal surface type, i.e., in no eyeglass face type In the case of, the height of same point is constant in three sub- facula measurement substrates 20;Fig. 7 be simplify after both There is basal surface type also to have eyeglass surface type measurement schematic diagram, as illustrated, after base station 10 is moved, substrate 20 On identical point M2 and M2 ' and M3 and M3 ' measured value and unequal, drawn with reference to Fig. 5 and Fig. 6 Conclusion, it can be determined that this be by base station 10 height and lateral attitude change caused by, pass through following meter Measured value caused by calculating the height that can eliminate base station 10 and lateral attitude change changes:
1. measurement reference line l1 height and inclination for the first time are calculated according to M1 and M2 measured values, due to M1 It is reference point with M2, therefore M1 to l1 is met apart from d1 and M2 to l1 apart from d2:D1=d2=0;
2. M3 is calculated to first time measurement reference line l1 apart from d3;
3. measuring obtained M2 ' and M3 ' for the second time with d2 and d3 amendments, modification method is M2 "=M2 '-d2, M3 "=M3 '-d3;
4. it is second survey to use the revised variable quantity of M2 " and M3 " Fitted references line l2, l2 with respect to l1 The knots modification of relative first posture of measurement point base station 10 of amount point;
5. ask M4 ' with respect to reference line l2 apart from d4;
6.d1, d2, d3, d4 are basal surface type.
The core concept of the application is it can be seen from above-mentioned analysis:Based on a reference plane, substrate 20 is sought Upper each point is relative to the height of reference plane, and reference plane mentioned here is that some measurement point is being adjusted on basidigitale 20 Ideal plane (fit Plane) in the hot spot coverage of burnt leveling system 40.Reckoning road shown in Fig. 8 Footpath will refer to point selection at the center of substrate 20, using 9 sub- hot spots of focusing and leveling system 40 in substrate The fit Plane of 20 center measured values as whole substrate 20 reference plane.
Please emphasis refer to Figure 10, the present invention provides a kind of basal surface type measuring method, including:
S1:Substrate 20 is uploaded to base station 10, the base is measured by the position-measurement device of base station 10 The position of base frame 10 obtains base station positional value, focusing and leveling system 40 is opened, by m × n hot spot matrix Incide in the substrate 20, the hot spot matrix column is away from for d1, and line-spacing is d2, wherein n >=3, m >=3;
S2:Planned in the substrate 20 in scanning pattern, the present embodiment, the scanning pattern is:It is adjacent The serpentine path of two row sequentially end to end formation, the mobile base station 10, make the hot spot matrix along The scanning pattern is moved relative to the base station 10, and each in the hot spot matrix when recording mobile every time The substrate location value that sub-light spot is measured, wherein the step-length that Spot Moment battle array is moved in the X direction is d1, The step-length moved in Y-direction is d2;
S3:All substrate location values that sub-light spot is measured described in step S2 are arranged, and according to substrate position Value and the base station positional value are put, the substrate location value is modified, finally according to revised institute State the face type that substrate location value calculates the substrate 20.
It is preferred that the step S3 specifically includes following steps:
S31:By the hot spot matrix along the scanning pattern move when, the position of each sub- facula measurement Referred to as measurement point is put, all measurement points are formed as s × t calculation matrix, arrange the sub-light spot in the measurement Substrate location value at point, using the measurement point of center in the substrate 20 or neighbouring center position as ginseng Examination point, regard the point using centered on the reference point or m × n of neighbouring the central point measurement point as calculating square Battle array, and the substrate location value of the measurement point is fitted to reference plane;
S32:The substrate location value of the measurement point covered according to the calculating matrix and the base station position Value, calculates the height of the relatively described reference plane of each measurement point in the reference plane and the calculating matrix, will Result of calculation is transformed under substrate coordinate system, obtains position ginseng of the measurement point under the substrate coordinate system Number;
It is preferred that specifically including following steps in step S32:
S321:Substrate level value (the Spot of the measurement point covered according to the calculating matrixij_x、Spotij_ y), With substrate level value FLS_Zij, and base station height value Z_WS, calculate the height value Z_ref of the reference plane With tilting value (Rx_ref, Ry_ref), wherein i=0,1 ..., m, j=0,1 ..., n:
S322:Calculate the height of the relatively described reference plane of each measurement point in the calculating matrix Spotij_d0
S323:Result of calculation is transformed under the substrate coordinate system, the institute of the calculating matrix covering is obtained There is floor parameter of the measurement point under the substrate coordinate system:
Wherein, (xS, yS) represent level of the S measurement point under the substrate coordinate system in the substrate 20 Parameter, zSRepresent height parameter of the S measurement point under the substrate coordinate system.
S33:The calculating matrix are moved along Y-axis positive direction (as illustrated in fig. 9) with step-length d1, will The point repeated in the measurement point that the measurement point of presently described calculating matrix covering is covered with previously described calculating matrix Referred to as known point, the point not repeated is referred to as unknown point, using the known point in previously described calculating matrix The height of corresponding reference plane corrects substrate location of the known point in presently described calculating matrix Value;
It is preferred that in the step S33, using the known point in previously described calculating matrix it is corresponding The reference plane height come correct the known point in presently described calculating matrix substrate location value tool Body is:
Wherein:
FLS_Zl,kThe substrate level value of the measurement point arranged for l rows kth in presently described calculating matrix;
FLS_Zl,kThe revised substrate level of the measurement point arranged for l rows kth in presently described calculating matrix Value;
Spotp,q_djumpIt is the calculating matrix along after the ump stepping of jth of Y-axis positive direction, the calculating matrix The height of the corresponding reference plane when measurement point of middle pth row q row is with respect to this stepping.
S34:The substrate location value of the revised known point is fitted to new reference plane, calculate described in not Know the height of a little relatively new reference plane, result of calculation is carried out to be converted to the unknown point in the substrate Location parameter under coordinate system;
It is preferred that carrying out result of calculation described in step S34 is converted to the unknown point in the base Location parameter under the coordinate system of bottom, it is specific as follows:
Wherein, (xS, yS) horizontal parameters of the S measurement point under substrate coordinate system in the substrate are represented, zSRepresent height parameter of the S measurement point under substrate coordinate system in the substrate 20;(X_WS, Y_WS) For the base station level value of the base station 10.
S35:Return to step S33, by the base of whole measurement points in Y-axis positive direction (as illustrated in fig. 9) Bottom positional value is modified, and obtains in Y-axis positive direction all measurement points under the substrate coordinate system Location parameter;
S36:The calculating matrix are respectively along Y-axis negative direction (Fig. 9 b), parallel to X-axis positive direction (figure 9d), it is mobile parallel to X-axis negative direction (Fig. 9 c), according to the method amendment described in step S33 to S35 The substrate location value of all measurement points, obtains location parameter of the measurement point under substrate coordinate system, Wherein described calculating matrix are d2 along the step-length moved parallel to X-direction;
S37:The substrate 20 is drawn using all location parameter of the measurement point under the substrate coordinate system Face type.
Using the basal surface type measuring method of the present invention, no matter hot spot matrix is along X to moving or Y during measurement To motion, in adjacent twice sweep measurement, always there is at least six sub-light spot to be repeatedly measured in substrate 20, Change due to the height of base station 10 and lateral attitude can be eliminated according to the front and rear information measured twice and caused Measured value change, and then obtain the accurate face type information of substrate 20, this mode measurement accuracy is higher, and Measuring speed is faster.
Embodiment two
Please emphasis refer to Figure 11, the present embodiment and the difference of embodiment one are:The present embodiment uses grating scale Component 50 controls the base station 10 to move, specifically, and another realization that the present embodiment is provided is as above The basal surface type measurement apparatus of described basal surface type measuring method, including base station 10, it is fixed on the base Substrate 20 on base frame 10, grating scale component 50, focusing and leveling for measuring the position of base station 10 System 40 and data processing unit, the focusing and leveling system 40 incide m × n hot spot matrix described In substrate 20, wherein n >=3, m >=3, the hot spot matrix carries out step-scan to the surface of the substrate 20, Measurement obtains the substrate location value of some substrates 20, wherein the step-length of Spot Moment battle array in the X direction With the hot spot matrix column away from equal, step-length in the Y direction is equal with the line-spacing of the hot spot matrix, Some substrate location values and the grating scale that the data processing unit is measured according to the hot spot matrix The base station positional value that component 50 is measured, is modified to the substrate location value, finally according to revised The substrate location value calculates the face type of the substrate 20.
In the present embodiment, due to the processing and manufacturing error of Dali Shitai County 60, its upper surface is not an ideal Plane, in this case measure basal surface type will necessarily introduce larger error.Using said structure And method, it can equally eliminate due to the test error of the surface irregularity introducing of Dali Shitai County 60, improve and survey Try precision.
In summary, the present invention is provided basal surface type measuring method and measurement apparatus, this method include:S1: Substrate 20 is uploaded to base station 10, the position of the base station 10 is measured by base station position-measurement device Put and obtain base station positional value, open focusing and leveling system 40, m × n hot spot matrix is incided into the base On bottom 20, the hot spot matrix column is away from for d1, and line-spacing is d2, wherein n >=3, m >=3;S2:Described Scanning pattern is planned in substrate 20, the mobile base station 10 makes the hot spot matrix along the scanning road Footpath is moved relative to the base station 10, and each sub-light spot is measured in the hot spot matrix when recording mobile every time Substrate location value, wherein the step-length that moves in the X direction of Spot Moment battle array is d1, move up in the Y direction Dynamic step-length is d2;S3:All substrate location values that sub-light spot is measured described in arrangement step S2, and according to The substrate location value and the base station positional value, are modified to the substrate location value, finally according to The revised substrate location value calculates the face type of the substrate 20.So, surveyed in adjacent twice sweep Always there is at least six sub-light spot to be repeatedly measured in amount, in substrate 20, according to the front and rear information measured twice i.e. The measured value caused by the change of the height of base station 10 and lateral attitude can be eliminated to change, and then obtain standard True basal surface type information, this mode measurement accuracy is higher, and measuring speed is faster.
Obviously, those skilled in the art can carry out various changes and modification without departing from the present invention to invention Spirit and scope.So, if the present invention these modifications and variations belong to the claims in the present invention and its Within the scope of equivalent technologies, then the present invention is also intended to including these changes and modification.

Claims (10)

1. a kind of basal surface type measuring method, it is characterised in that including:
S1:Substrate is uploaded to base station, the position of the base station is measured by base station position-measurement device Base station positional value is obtained, focusing and leveling system is opened, m × n hot spot matrix is incided in the substrate, The hot spot matrix column is away from for d1, and line-spacing is d2, wherein n >=3, m >=3;
S2:Scanning pattern is planned on the substrate, and the mobile base station makes the hot spot matrix along institute Each sub-light spot in hot spot matrix when stating scanning pattern to move relative to the base station, and recording mobile every time The substrate location value measured, wherein the step-length that Spot Moment battle array is moved in the X direction is d1, in the Y direction The step-length of upper movement is d2;
S3:All substrate location values that sub-light spot is measured described in step S2 are arranged, and according to substrate position Value and the base station positional value are put, the substrate location value is modified, finally according to revised described Substrate location value calculates the face type of the substrate.
2. basal surface type measuring method as claimed in claim 1, it is characterised in that the step S3 includes Following steps:
S31:By the hot spot matrix along the scanning pattern move when, the position of each sub- facula measurement Referred to as measurement point is put, substrate location value of the sub-light spot in the measurement point is arranged, then with the substrate The measurement point of center or neighbouring center position is reference point, will be put or neighbouring centered on the reference point M × n of the central point measurement point is fitted as calculating matrix, and by the substrate location value of the measurement point On the basis of face;
S32:The substrate location value of the measurement point covered according to the calculating matrix and the base station position Value, calculates the height of the relatively described reference plane of each measurement point in the reference plane and the calculating matrix, will count Calculate result to be transformed under substrate coordinate system, obtain location parameter of the measurement point under the substrate coordinate system;
S33:The calculating matrix are moved along Y-axis positive direction with step-length d1, by presently described calculating matrix The point repeated in the measurement point that the measurement point of covering is covered with previously described calculating matrix is referred to as known point, does not repeat Point be referred to as unknown point, utilize the height of known point reference plane corresponding in previously described calculating matrix To correct substrate location value of the known point in presently described calculating matrix;
S34:The substrate location value of the revised known point is fitted to new reference plane, calculate described in not Know the height of a little relatively new reference plane, result of calculation progress is converted into the unknown point sits in the substrate Location parameter under mark system;
S35:Return to step S33, the substrate location value of whole measurement points in Y-axis positive direction is modified, Obtain location parameter of all measurement points under the substrate coordinate system in Y-axis positive direction;
S36:The calculating matrix are born along Y-axis negative direction, parallel to X-axis positive direction, parallel to X-axis respectively Direction is moved, according to the substrate location value of all measurement points of method amendment described in step S33 to S35, Location parameter of the measurement point under substrate coordinate system is obtained, wherein the calculating matrix are along parallel to X-axis side It is d2 to mobile step-length;
S37:The substrate is drawn using all location parameter of the measurement point under the substrate coordinate system Face type.
3. basal surface type measuring method as claimed in claim 2, it is characterised in that step S32 include with Lower step:
S321:Substrate level value (the Spot of the measurement point covered according to the calculating matrixij_x、Spotij_ y), With substrate level value FLS_Zij, and base station height value Z_WS, calculate the height value Z_ref of the reference plane With tilting value (Rx_ref, Ry_ref), wherein i=0,1 ..., m, j=0,1 ..., n:
S322:Calculate the height Spot of the relatively described reference plane of each measurement point in the calculating matrixij_d0
S323:Result of calculation is transformed under the substrate coordinate system, all of the calculating matrix covering are obtained Floor parameter of the measurement point under the substrate coordinate system:
Wherein, (xS, yS) horizontal parameters of the S measurement point under the substrate coordinate system in the substrate are represented, zSRepresent height parameter of the S measurement point under the substrate coordinate system.
4. basal surface type measuring method as claimed in claim 2, it is characterised in that in the step S33, Correct described using the height of the known point reference plane corresponding in previously described calculating matrix Substrate location value of the known point in presently described calculating matrix be:
Wherein:
FLS_Zl,kThe substrate level value of the measurement point arranged for l rows kth in presently described calculating matrix;
FLS_Zl,kThe revised substrate level of the measurement point arranged for l rows kth in presently described calculating matrix Value;
Spotp,q_djumpIt is the calculating matrix along after the ump stepping of jth of Y-axis positive direction, the calculating matrix The height of the corresponding reference plane when measurement point of middle pth row q row is with respect to this stepping.
5. basal surface type measuring method as claimed in claim 4, it is characterised in that described in step S34 Result of calculation is carried out to be converted to location parameter of the unknown point under the substrate coordinate system, method is such as Under:
Wherein, (xS, yS) horizontal parameters of the S measurement point under substrate coordinate system in the substrate are represented, zSRepresent height parameter of the S measurement point under substrate coordinate system in the substrate;(X_WS, Y_WS) is The base station level value of the base station.
6. basal surface type measuring method as claimed in claim 1, it is characterised in that described in step S2 Scanning pattern is:Adjacent two arrange the serpentine path of sequentially end to end formation.
7. a kind of basal surface type measurement apparatus for realizing basal surface type measuring method as claimed in claim 1, its Be characterised by, including base station, be fixed in the base station substrate, for measuring the base station position Interferometer component, focusing and leveling system and data processing unit, the focusing and leveling system is by m × n's Hot spot matrix is incided in the substrate, wherein n >=3, m >=3, surface of the hot spot matrix to the substrate Step-scan is carried out, measurement obtains the substrate location value of some substrates, wherein Spot Moment battle array is in X side Upward step-length is with the hot spot matrix column away from equal, step-length in the Y direction and the row of the hot spot matrix Away from equal, some substrate location values that the data processing unit is measured according to the hot spot matrix and described The base station positional value that interferometer component is measured, is modified to the substrate location value, after amendment The substrate location value calculate the face type of the substrate.
8. basal surface type measurement apparatus as claimed in claim 7, it is characterised in that the interferometer component bag Include Z-direction interferometer, X side's mirror, Y side's mirror, 45 ° of mirrors and Z-direction strip mirror, X side's mirror and Y side's mirror It is attached to respectively on two adjacent side elevations of the base station, 45 ° of mirrors are located at the bottom of X side's mirror Portion, the Z-direction strip mirror is located at the top of the base station, and the reference light that the Z-direction interferometer is sent is vertical X side's mirror and Y side's mirror are incident to, the Z-direction interferometer is incident to after reflection;The Z-direction interference The measurement light that instrument is sent is incident to 45 ° of mirrors, is incident to the Z-direction strip mirror after 90 ° of deflection, finally Along backtracking to the Z-direction interferometer.
9. basal surface type measurement apparatus as claimed in claim 7 or 8, it is characterised in that the substrate passes through Sucker is fixed in the base station.
10. a kind of basal surface type measurement apparatus for realizing basal surface type measuring method as claimed in claim 1, It is characterised in that it includes base station, the substrate being fixed in the base station, for measuring base station position Grating scale component, focusing and leveling system and the data processing unit put, the focusing and leveling system is by m × n's Hot spot matrix is incided in the substrate, wherein n >=3, m >=3, surface of the hot spot matrix to the substrate Step-scan is carried out, measurement obtains the substrate location value of some substrates, wherein Spot Moment battle array is in X side Upward step-length is with the hot spot matrix column away from equal, step-length in the Y direction and the row of the hot spot matrix Away from equal, some substrate location values that the data processing unit is measured according to the hot spot matrix and described The base station positional value that grating scale component is measured, is modified to the substrate location value, after amendment The substrate location value calculate the face type of the substrate.
CN201610069182.7A 2016-01-29 2016-01-29 Method and device for measuring basal surface Active CN107024185B (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
CN201610069182.7A CN107024185B (en) 2016-01-29 2016-01-29 Method and device for measuring basal surface

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
CN201610069182.7A CN107024185B (en) 2016-01-29 2016-01-29 Method and device for measuring basal surface

Publications (2)

Publication Number Publication Date
CN107024185A true CN107024185A (en) 2017-08-08
CN107024185B CN107024185B (en) 2020-08-25

Family

ID=59524873

Family Applications (1)

Application Number Title Priority Date Filing Date
CN201610069182.7A Active CN107024185B (en) 2016-01-29 2016-01-29 Method and device for measuring basal surface

Country Status (1)

Country Link
CN (1) CN107024185B (en)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN108731601A (en) * 2018-08-17 2018-11-02 桂林电子科技大学 A kind of the grating scale caliberating device and scaling method of space optical path
CN108801158A (en) * 2018-08-17 2018-11-13 桂林电子科技大学 A kind of grating scale caliberating device and scaling method
CN108827188A (en) * 2018-09-07 2018-11-16 苏州瑞霏光电科技有限公司 A kind of three-D profile microscopic measuring method based on maskless photoetching machine

Citations (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH10270317A (en) * 1997-03-25 1998-10-09 Nikon Corp Method of scanning exposure
US6562528B2 (en) * 2001-06-20 2003-05-13 Nikon Corporation Method for determining and calibrating image plane tilt and substrate plane tilt in photolithography
US7333174B2 (en) * 2004-12-27 2008-02-19 Asml Netherlands, B.V. Lithographic apparatus and method for determining Z position errors/variations and substrate table flatness
CN101276160A (en) * 2008-05-09 2008-10-01 上海微电子装备有限公司 Focusing and leveling device for photo-etching machine as well as measuring method
CN101320218A (en) * 2008-07-08 2008-12-10 上海微电子装备有限公司 Three scanning type silicon slice focusing and leveling measurement apparatus, system and method
CN101482399A (en) * 2009-02-03 2009-07-15 上海微电子装备有限公司 Method and system for measuring substrate inclination and cornerstone inclination
CN102033438A (en) * 2009-09-29 2011-04-27 上海微电子装备有限公司 Focusing and levelling device with expandable measuring range and focusing and levelling method

Patent Citations (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH10270317A (en) * 1997-03-25 1998-10-09 Nikon Corp Method of scanning exposure
US6562528B2 (en) * 2001-06-20 2003-05-13 Nikon Corporation Method for determining and calibrating image plane tilt and substrate plane tilt in photolithography
US7333174B2 (en) * 2004-12-27 2008-02-19 Asml Netherlands, B.V. Lithographic apparatus and method for determining Z position errors/variations and substrate table flatness
CN101276160A (en) * 2008-05-09 2008-10-01 上海微电子装备有限公司 Focusing and leveling device for photo-etching machine as well as measuring method
CN101320218A (en) * 2008-07-08 2008-12-10 上海微电子装备有限公司 Three scanning type silicon slice focusing and leveling measurement apparatus, system and method
CN101482399A (en) * 2009-02-03 2009-07-15 上海微电子装备有限公司 Method and system for measuring substrate inclination and cornerstone inclination
CN102033438A (en) * 2009-09-29 2011-04-27 上海微电子装备有限公司 Focusing and levelling device with expandable measuring range and focusing and levelling method

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN108731601A (en) * 2018-08-17 2018-11-02 桂林电子科技大学 A kind of the grating scale caliberating device and scaling method of space optical path
CN108801158A (en) * 2018-08-17 2018-11-13 桂林电子科技大学 A kind of grating scale caliberating device and scaling method
CN108731601B (en) * 2018-08-17 2019-12-31 桂林电子科技大学 Grating scale calibration device and calibration method for spatial light path
CN108801158B (en) * 2018-08-17 2019-12-31 桂林电子科技大学 Grating scale calibration device and calibration method
CN108827188A (en) * 2018-09-07 2018-11-16 苏州瑞霏光电科技有限公司 A kind of three-D profile microscopic measuring method based on maskless photoetching machine

Also Published As

Publication number Publication date
CN107024185B (en) 2020-08-25

Similar Documents

Publication Publication Date Title
CN107883884B (en) A kind of optical measuring device and method
KR100377887B1 (en) Sort method
TW201803706A (en) Robot correction system and method thereof
US10921719B2 (en) Optical measurement device and method
CN107024185A (en) A kind of basal surface type measuring method and measurement apparatus
CN106814557B (en) A kind of pair of Barebone and alignment methods
CN108037647A (en) Real-time leveling system and method for proximity lithography machine
CN105066897A (en) Thin substrate deformation measuring method eliminating influence of gravity
CN107883866B (en) A kind of optical measuring device and method
CN102540783B (en) Automatic calibration device and method for abbe cosine error of interferometer
CN106154759B (en) A kind of lithographic equipment and method of the fluctuating of recoverable material
CN110268512B (en) Method for correcting pattern placement
CN102129176B (en) Method for eliminating oblique error caused by surface shape of elongated lens
CN102169294B (en) Method for measuring scanning inclination of mask table in scanning mask aligner
CN104460235B (en) The measuring method of focusing levelling light spot horizontal position
CN113741148B (en) Method for correcting workpiece table inclination error and photoetching device
US9424636B2 (en) Method for measuring positions of structures on a mask and thereby determining mask manufacturing errors
CN106933042B (en) The method for measuring double-laser interferometer intersection angle non-orthogonality
CN114063400B (en) Measuring method and device for measuring component of photoetching machine equipment and photoetching machine
CN105652598B (en) A kind of device and method for measuring mask aligner mask platform gradient and vertical degree
CN113625532B (en) Substrate mark position detection method and device
JPH10125586A (en) Alignment method and device for aligner
CN107976869A (en) A kind of nonopiate bearing calibration of work stage and means for correcting

Legal Events

Date Code Title Description
PB01 Publication
PB01 Publication
SE01 Entry into force of request for substantive examination
SE01 Entry into force of request for substantive examination
CB02 Change of applicant information
CB02 Change of applicant information

Address after: 201203 Pudong New Area East Road, No. 1525, Shanghai

Applicant after: Shanghai microelectronics equipment (Group) Limited by Share Ltd

Address before: 201203 Pudong New Area East Road, No. 1525, Shanghai

Applicant before: Shanghai Micro Electronics Equipment Co., Ltd.

GR01 Patent grant
GR01 Patent grant