CN106981562B - 量子点led封装结构 - Google Patents
量子点led封装结构 Download PDFInfo
- Publication number
- CN106981562B CN106981562B CN201710202967.1A CN201710202967A CN106981562B CN 106981562 B CN106981562 B CN 106981562B CN 201710202967 A CN201710202967 A CN 201710202967A CN 106981562 B CN106981562 B CN 106981562B
- Authority
- CN
- China
- Prior art keywords
- quantum dot
- layer
- support
- package structure
- led package
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
- 239000002096 quantum dot Substances 0.000 title claims abstract description 112
- 238000005538 encapsulation Methods 0.000 title abstract 2
- 230000004888 barrier function Effects 0.000 claims abstract description 38
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims abstract description 29
- 239000000741 silica gel Substances 0.000 claims abstract description 25
- 229910002027 silica gel Inorganic materials 0.000 claims abstract description 25
- 239000000463 material Substances 0.000 claims description 34
- 229910052751 metal Inorganic materials 0.000 claims description 18
- 239000002184 metal Substances 0.000 claims description 18
- 238000002955 isolation Methods 0.000 claims description 13
- 238000000034 method Methods 0.000 claims description 7
- 239000011521 glass Substances 0.000 claims description 6
- 229920001296 polysiloxane Polymers 0.000 claims description 5
- 239000000919 ceramic Substances 0.000 claims description 3
- 229920006336 epoxy molding compound Polymers 0.000 claims description 3
- 238000000623 plasma-assisted chemical vapour deposition Methods 0.000 claims description 3
- 238000004544 sputter deposition Methods 0.000 claims description 3
- 238000002207 thermal evaporation Methods 0.000 claims description 3
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 claims description 2
- 229910052681 coesite Inorganic materials 0.000 claims description 2
- 229910052593 corundum Inorganic materials 0.000 claims description 2
- 229910052906 cristobalite Inorganic materials 0.000 claims description 2
- 239000000377 silicon dioxide Substances 0.000 claims description 2
- 229910052682 stishovite Inorganic materials 0.000 claims description 2
- 229910052905 tridymite Inorganic materials 0.000 claims description 2
- 229910001845 yogo sapphire Inorganic materials 0.000 claims description 2
- 229910052760 oxygen Inorganic materials 0.000 abstract description 13
- 239000001301 oxygen Substances 0.000 abstract description 13
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 abstract description 12
- 230000000694 effects Effects 0.000 abstract description 11
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 abstract description 10
- 238000004020 luminiscence type Methods 0.000 abstract description 6
- 230000017525 heat dissipation Effects 0.000 abstract description 5
- 238000004519 manufacturing process Methods 0.000 abstract description 3
- 239000004973 liquid crystal related substance Substances 0.000 description 11
- 238000004806 packaging method and process Methods 0.000 description 9
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 7
- 239000000758 substrate Substances 0.000 description 5
- 230000007547 defect Effects 0.000 description 3
- 238000000295 emission spectrum Methods 0.000 description 3
- 230000035699 permeability Effects 0.000 description 3
- 239000000843 powder Substances 0.000 description 3
- 238000010586 diagram Methods 0.000 description 2
- 239000010408 film Substances 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 229920000139 polyethylene terephthalate Polymers 0.000 description 2
- 239000005020 polyethylene terephthalate Substances 0.000 description 2
- 239000000565 sealant Substances 0.000 description 2
- 238000000926 separation method Methods 0.000 description 2
- 239000010409 thin film Substances 0.000 description 2
- PIGFYZPCRLYGLF-UHFFFAOYSA-N Aluminum nitride Chemical compound [Al]#N PIGFYZPCRLYGLF-UHFFFAOYSA-N 0.000 description 1
- 239000004593 Epoxy Substances 0.000 description 1
- 241000227425 Pieris rapae crucivora Species 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- CSDREXVUYHZDNP-UHFFFAOYSA-N alumanylidynesilicon Chemical compound [Al].[Si] CSDREXVUYHZDNP-UHFFFAOYSA-N 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 238000005336 cracking Methods 0.000 description 1
- 238000005137 deposition process Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 238000000695 excitation spectrum Methods 0.000 description 1
- 239000000499 gel Substances 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 239000002159 nanocrystal Substances 0.000 description 1
- 239000002105 nanoparticle Substances 0.000 description 1
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 description 1
- 239000002245 particle Substances 0.000 description 1
- 239000004033 plastic Substances 0.000 description 1
- 229920003023 plastic Polymers 0.000 description 1
- -1 polyethylene terephthalate Polymers 0.000 description 1
- 230000008569 process Effects 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- LIVNPJMFVYWSIS-UHFFFAOYSA-N silicon monoxide Chemical compound [Si-]#[O+] LIVNPJMFVYWSIS-UHFFFAOYSA-N 0.000 description 1
- 229910052814 silicon oxide Inorganic materials 0.000 description 1
- 229920002379 silicone rubber Polymers 0.000 description 1
- 239000004945 silicone rubber Substances 0.000 description 1
- 230000003595 spectral effect Effects 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/52—Encapsulations
- H01L33/56—Materials, e.g. epoxy or silicone resin
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/04—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a quantum effect structure or superlattice, e.g. tunnel junction
- H01L33/06—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a quantum effect structure or superlattice, e.g. tunnel junction within the light emitting region, e.g. quantum confinement structure or tunnel barrier
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/44—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the coatings, e.g. passivation layer or anti-reflective coating
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/483—Containers
- H01L33/486—Containers adapted for surface mounting
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/52—Encapsulations
- H01L33/54—Encapsulations having a particular shape
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/64—Heat extraction or cooling elements
- H01L33/641—Heat extraction or cooling elements characterized by the materials
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/50—Wavelength conversion elements
- H01L33/501—Wavelength conversion elements characterised by the materials, e.g. binder
- H01L33/502—Wavelength conversion materials
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/50—Wavelength conversion elements
- H01L33/501—Wavelength conversion elements characterised by the materials, e.g. binder
- H01L33/502—Wavelength conversion materials
- H01L33/504—Elements with two or more wavelength conversion materials
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Power Engineering (AREA)
- Led Device Packages (AREA)
Abstract
本发明提供一种量子点LED封装结构，包括底部支架、外部支架、含量子点层发光芯片、无机屏障层、及顶部硅胶层，其中，所述无机屏障层在所述底部支架上覆盖所述外部支架和含量子点层发光芯片，而对所述外部支架和含量子点层发光芯片进行封装；通过采用无机屏障层对外部支架和含量子点层发光芯片进行封装，并在无机屏障层上设置顶部硅胶层，对量子点LED能够满足现有封装结构单纯采用硅胶层所无法满足的水氧阻隔条件，并具有良好的散热效果，进而解决了目前量子点LED难以量产、成本高、光效低、不易实现窄边框应用等问题。
Description
技术领域
本发明涉及显示技术领域，尤其涉及一种量子点LED封装结构。
背景技术
薄膜晶体管液晶显示器(Thin Film Transistor-LCD，TFT-LCD)近年来得到了飞速的发展和广泛的应用。现有市场上的液晶显示装置大部分为背光型液晶显示装置，其包括液晶显示面板及背光模组(backlight module)。通常液晶显示面板由彩膜(ColorFilter，CF)基板、薄膜晶体管(Thin Film Transistor，TFT)基板、夹于彩膜基板与薄膜晶体管基板之间的液晶(Liquid Crystal，LC)及密封框胶(Sealant)组成；其工作原理是通过在两片玻璃基板上施加驱动电压来控制液晶层的液晶分子的旋转，将背光模组的光线折射出来产生画面。
目前液晶显示器件中，普遍采用白光发光二极管(Light Emitting Diode，LED)作背光源。而最普遍的白光LED为蓝光发光芯片(B chip)加黄色荧光粉(Y phosphor)的LED，而采用黄光荧光粉的LED作为背光源搭配液晶显示面板后，显示器的色彩饱和度通常都比较低(NTSC色域值一般为72％)，显示的颜色不够鲜艳，为了提高色彩饱和度，实现更鲜艳的色彩表现，目前主要通过将黄色荧光粉更改为红色绿色(RG)荧光粉，而使白光LED采用蓝色发光芯片加红色绿色荧光粉的方式，但这种方式相对于加黄色荧光粉的方式只能够提高25％左右的色域值(NTSC色域值一般为90％)，仍无法满足新的BT.2020色域标准(相当于NTSC色域值为134％)，目前可实现80％BT.2020色域标准以上的技术，只有采用具有窄发光光谱的量子点(Quantum Dot，QD)材料的技术最容易实现，且最节能。
量子点，又可称为纳米晶，粒径一般介于1-10nm之间的纳米颗粒，由于电子和空穴被量子限域，连续的能带结构变成具有分子特性的分立能级结构，受激后可以发射荧光。量子点的发射光谱可通过改变量子点的尺寸大小来控制。通过改变量子点的尺寸和其化学组成可以使其发射光谱覆盖整个可见光区，具有宽的激发谱和窄的发射谱，因而光谱覆盖率较高。而且相比较于有机荧光粉的荧光寿命，量子点的荧光寿命是其3-5倍，具有很好的光稳定性。总而言之，量子点是一种理想的荧光材料。
将量子点混合材料作为荧光发光材料与硅胶封装在LED支架内部，被称为量子点发光二极管(QLED)。但量子点对水氧比较敏感，暴露在水氧环境下，荧光效率会存在不可逆的迅速下降，所以对量子点的封装需要具有很好的水氧隔绝能力。另外，量子点材料随温度的升高，发光效率会逐渐下降，发光波长也会红移，故对量子点的封装需要能够隔绝高温或有较好的散热环境。目前在量子点LED的背光应用中，主要采用的封装方式为将量子点封装在玻璃管中或封装在隔水隔氧的聚对苯二甲酸乙二酯(PET)薄膜中，但前者应用玻璃，存在易碎、光利用率较低、不易实现窄边框的缺点，而后者则存在容易产生背光边缘蓝色色偏和高成本的缺点。
发明内容
本发明的目的在于提供一种量子点LED封装结构，具有良好的散热效果和水氧阻隔效果，旨在解决目前的量子点LED难以量产、成本高、光效低、不易实现窄边框应用等问题。
为实现上述目的，本发明提供一种量子点LED封装结构，包括底部支架、外部支架、含量子点层发光芯片、无机屏障层、及顶部硅胶层；
所述含量子点层发光芯片设于所述底部支架上；
所述外部支架设于所述底部支架上且环绕所述含量子点层发光芯片；
所述无机屏障层在所述底部支架上覆盖所述外部支架和含量子点层发光芯片，而对所述外部支架和含量子点层发光芯片进行封装；
所述顶部硅胶层设于所述无机屏障层上。
所述无机屏障层的材料为SiO2、AlN、SiAlN、或Al2O3。
所述无机屏障层采用低温溅射法、等离子体增强化学气相沉积法、或热蒸发法沉积形成。
所述含量子点层发光芯片包括由下至上依次设于所述底部支架上的蓝光发光芯片、第一隔离层、量子点层、及第二隔离层。
所述量子点层包含两种量子点材料，分别为红色量子点材料和绿色量子点材料。
所述量子点层包含一种量子点材料，为绿色量子点材料；
所述顶部硅胶层为包含KSF磷光发光材料的硅胶层。
所述第一隔离层和第二隔离层的材料为硅胶或玻璃。
所述底部支架包括相互间隔的第一金属支架和第二金属支架、以及位于所述第一金属支架和第二金属支架之间的绝缘支架；
所述第一金属支架和第二金属支架分别与所述蓝光发光芯片的正极与负极相连接。
所述外部支架及绝缘支架的材料为环氧塑封料、或陶瓷。
所述蓝光发光芯片为倒装芯片。
本发明的有益效果：本发明提供一种量子点LED封装结构，包括底部支架、外部支架、含量子点层发光芯片、无机屏障层、及顶部硅胶层，其中，所述无机屏障层在所述底部支架上覆盖所述外部支架和含量子点层发光芯片，而对所述外部支架和含量子点层发光芯片进行封装；通过采用无机屏障层对外部支架和含量子点层发光芯片进行封装，并在无机屏障层上设置顶部硅胶层，对量子点LED能够满足现有封装结构单纯采用硅胶层所无法满足的水氧阻隔条件，并具有良好的散热效果，进而解决了目前量子点LED难以量产、成本高、光效低、不易实现窄边框应用等问题。
为了能更进一步了解本发明的特征以及技术内容，请参阅以下有关本发明的详细说明与附图，然而附图仅提供参考与说明用，并非用来对本发明加以限制。
附图说明
下面结合附图，通过对本发明的具体实施方式详细描述，将使本发明的技术方案及其它有益效果显而易见。
附图中，
图1为本发明的量子点LED封装结构的示意图；
图2为本发明的量子点LED封装结构中含量子点层发光芯片的结构示意图。
具体实施方式
为更进一步阐述本发明所采取的技术手段及其效果，以下结合本发明的优选实施例及其附图进行详细描述。
请参阅图1，本发明提供一种量子点LED封装结构，包括底部支架110、外部支架130、含量子点层发光芯片150、无机屏障层170、及顶部硅胶层190；
所述含量子点层发光芯片150设于所述底部支架110上；
所述外部支架130设于所述底部支架110上且环绕所述含量子点层发光芯片150；
所述无机屏障层170在所述底部支架110上覆盖所述外部支架130和含量子点层发光芯片150，而对所述外部支架130和含量子点层发光芯片150进行封装；
所述顶部硅胶层190设于所述无机屏障层170上，从而所述顶部硅胶层190中的硅胶可填充所述无机屏障层170在沉积过程中表面所形成部分缺陷，进而防止量子点LED封装结构在使用过程中由于环境温度湿度的急剧变化而导致的薄膜龟裂。
本发明的量子点LED封装结构，通过采用无机屏障层170对外部支架130和含量子点层发光芯片150进行封装，并在无机屏障层170上设置顶部硅胶层190，对量子点LED能够满足现有封装结构单纯采用硅胶层所无法满足的水氧阻隔条件(通常低透水透氧硅胶的透氧率为120-350cc/m2.day，而实际量子点LED所需要的水氧阻隔条件为透氧率<10-1cc/m2.day)，并具有良好的散热效果，进而解决了目前量子点LED难以量产、成本高、光效低、不易实现窄边框应用等问题。
具体地，所述无机屏障层170为低透水透氧率的无机阻隔(barrier)材料，既能够改善量子点LED封装结构的散热效果，也能够大大改善量子点LED封装结构对水氧的阻隔效果，进一步地，所述无机屏障层170的材料可为氧化硅(SiO2)、氮化铝(AlN)、氮化硅铝(SiAlN)、或氧化铝(Al2O3)等。
具体地，所述无机屏障层170采用低温溅射法、等离子体增强化学气相沉积法、或热蒸发法等方法沉积形成。
具体地，如图2所示，所述含量子点层发光芯片150包括由下至上依次设于所述底部支架110上的蓝光发光芯片151、第一隔离层152、量子点层153、及第二隔离层154。
可选地，所述量子点层153包含两种量子点材料，分别为红色量子点材料和绿色量子点材料；所述顶部硅胶层190为透明的硅胶材料。或者，
所述量子点层153仅包含绿色量子点材料这一种量子点材料；则所述顶部硅胶层190为包含KSF磷光发光材料的硅胶层，该体系的量子点LED封装结构由于KSF磷光发光材料不吸收绿光波段，故发光效率更高。
具体地，所述第一隔离层152和第二隔离层154的材料为硅胶或玻璃。
具体地，所述底部支架110包括相互间隔的第一金属支架111和第二金属支架112、以及位于所述第一金属支架111和第二金属支架112之间的绝缘支架113；所述第一金属支架111和第二金属支架112分别与所述蓝光发光芯片151的正极与负极相连接。
具体地，所述外部支架130及绝缘支架113的材料为环氧塑封料(Epoxy MoldingCompound，EMC)、或陶瓷。
具体地，所述蓝光发光芯片151为倒装芯片。
具体地，所述无机屏障层170在含量子点层发光芯片150上方形成凹陷，所述顶部硅胶层190形成于该凹陷内而对应位于所述含量子点层发光芯片150上方。
综上所述，本发明提供的一种量子点LED封装结构，包括底部支架、外部支架、含量子点层发光芯片、无机屏障层、及顶部硅胶层，其中，所述无机屏障层在所述底部支架上覆盖所述外部支架和含量子点层发光芯片，而对所述外部支架和含量子点层发光芯片进行封装；通过采用无机屏障层对外部支架和含量子点层发光芯片进行封装，并在无机屏障层上设置顶部硅胶层，对量子点LED能够满足现有封装结构单纯采用硅胶层所无法满足的水氧阻隔条件，并具有良好的散热效果，进而解决了目前量子点LED难以量产、成本高、光效低、不易实现窄边框应用等问题。
以上所述，对于本领域的普通技术人员来说，可以根据本发明的技术方案和技术构思作出其他各种相应的改变和变形，而所有这些改变和变形都应属于本发明权利要求的保护范围。
Claims (10)
1.一种量子点LED封装结构，其特征在于，包括底部支架(110)、外部支架(130)、含量子点层发光芯片(150)、无机屏障层(170)、及顶部硅胶层(190)；
所述含量子点层发光芯片(150)设于所述底部支架(110)上；
所述外部支架(130)设于所述底部支架(110)上且环绕所述含量子点层发光芯片(150)；
所述无机屏障层(170)在所述底部支架(110)上覆盖所述外部支架(130)和含量子点层发光芯片(150)，而对所述外部支架(130)和含量子点层发光芯片(150)进行封装；
所述顶部硅胶层(190)设于所述无机屏障层(170)上。
2.如权利要求1所述的量子点LED封装结构，其特征在于，所述无机屏障层(170)的材料为SiO2、AlN、SiAlN、或Al2O3。
3.如权利要求1所述的量子点LED封装结构，其特征在于，所述无机屏障层(170)采用低温溅射法、等离子体增强化学气相沉积法、或热蒸发法沉积形成。
4.如权利要求1所述的量子点LED封装结构，其特征在于，所述含量子点层发光芯片(150)包括由下至上依次设于所述底部支架(110)上的蓝光发光芯片(151)、第一隔离层(152)、量子点层(153)、及第二隔离层(154)。
5.如权利要求4所述的量子点LED封装结构，其特征在于，所述量子点层(153)包含两种量子点材料，分别为红色量子点材料和绿色量子点材料。
6.如权利要求4所述的量子点LED封装结构，其特征在于，所述量子点层(153)包含一种量子点材料，为绿色量子点材料；
所述顶部硅胶层(190)为包含KSF磷光发光材料的硅胶层。
7.如权利要求4所述的量子点LED封装结构，其特征在于，所述第一隔离层(152)和第二隔离层(154)的材料为硅胶或玻璃。
8.如权利要求4所述的量子点LED封装结构，其特征在于，所述底部支架(110)包括相互间隔的第一金属支架(111)和第二金属支架(112)、以及位于所述第一金属支架(111)和第二金属支架(112)之间的绝缘支架(113)；
所述第一金属支架(111)和第二金属支架(112)分别与所述蓝光发光芯片(151)的正极与负极相连接。
9.如权利要求8所述的量子点LED封装结构，其特征在于，所述外部支架(130)及绝缘支架(113)的材料为环氧塑封料、或陶瓷。
10.如权利要求4所述的量子点LED封装结构，其特征在于，所述蓝光发光芯片(151)为倒装芯片。
Priority Applications (7)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201710202967.1A CN106981562B (zh) | 2017-03-30 | 2017-03-30 | 量子点led封装结构 |
| US15/529,507 US10134962B2 (en) | 2017-03-30 | 2017-04-19 | Quantum dot LED package structure |
| KR1020197031577A KR20190127932A (ko) | 2017-03-30 | 2017-04-19 | 양자점 led 패키지 구조 |
| EP17903598.5A EP3605621B1 (en) | 2017-03-30 | 2017-04-19 | Quantum dot led packaging structure |
| PL17903598.5T PL3605621T3 (pl) | 2017-03-30 | 2017-04-19 | Konstrukcja obudowy diod led z kropkami kwantowymi |
| PCT/CN2017/081034 WO2018176525A1 (zh) | 2017-03-30 | 2017-04-19 | 量子点led封装结构 |
| JP2019553554A JP6852250B2 (ja) | 2017-03-30 | 2017-04-19 | 量子ドットｌｅｄパッケージ構造、及び量子ドットｌｅｄパッケージの作製方法 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201710202967.1A CN106981562B (zh) | 2017-03-30 | 2017-03-30 | 量子点led封装结构 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN106981562A CN106981562A (zh) | 2017-07-25 |
| CN106981562B true CN106981562B (zh) | 2019-04-02 |
Family
ID=59339285
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201710202967.1A Active CN106981562B (zh) | 2017-03-30 | 2017-03-30 | 量子点led封装结构 |
Country Status (7)
| Country | Link |
|---|---|
| US (1) | US10134962B2 (zh) |
| EP (1) | EP3605621B1 (zh) |
| JP (1) | JP6852250B2 (zh) |
| KR (1) | KR20190127932A (zh) |
| CN (1) | CN106981562B (zh) |
| PL (1) | PL3605621T3 (zh) |
| WO (1) | WO2018176525A1 (zh) |
Families Citing this family (13)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN206741157U (zh) * | 2017-04-19 | 2017-12-12 | 深圳Tcl新技术有限公司 | Led灯源、灯条及显示装置 |
| CN107565003B (zh) * | 2017-07-31 | 2019-04-30 | 深圳市华星光电技术有限公司 | 量子点led封装结构 |
| CN107833963A (zh) * | 2017-09-21 | 2018-03-23 | 华南师范大学 | 量子点On‑chip白光LED的二次气密性封装方法 |
| CN108011020B (zh) * | 2018-01-12 | 2020-02-07 | 惠州市华星光电技术有限公司 | 一种量子点膜片及背光源模组 |
| CN108281530A (zh) * | 2018-01-31 | 2018-07-13 | 惠州市华星光电技术有限公司 | 一种量子点led、背光模块及显示装置 |
| CN108493319A (zh) * | 2018-03-21 | 2018-09-04 | 惠州市华星光电技术有限公司 | 一种量子点发光二极管光源及发光二极管 |
| CN108400223A (zh) * | 2018-05-07 | 2018-08-14 | 深圳技术大学（筹） | 发光二极管封装结构、量子点密封单元及其制备方法 |
| CN108735879A (zh) * | 2018-07-26 | 2018-11-02 | 易美芯光（北京）科技有限公司 | 一种含有量子点的smd封装结构 |
| KR20200049929A (ko) * | 2018-10-29 | 2020-05-11 | 삼성디스플레이 주식회사 | 광학 부재 및 이를 포함하는 표시 장치 |
| CN110212074B (zh) * | 2019-06-03 | 2020-04-28 | 李红云 | 一种含有光学改善层量子点发光二极管封装结构 |
| US11099424B2 (en) | 2019-07-02 | 2021-08-24 | Dell Products L.P. | High color gamut LED bar with side illumination LED package |
| CN111403578B (zh) * | 2020-03-17 | 2021-04-06 | 深圳深旨科技有限公司 | 一种用磁控溅射封装深紫外led芯片的方法 |
| CN111725422A (zh) * | 2020-06-09 | 2020-09-29 | 武汉华星光电半导体显示技术有限公司 | 显示面板及其制备方法、显示装置 |
Family Cites Families (20)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP4727297B2 (ja) * | 2005-05-19 | 2011-07-20 | 三菱電機株式会社 | 半導体発光装置 |
| JP2007123390A (ja) * | 2005-10-26 | 2007-05-17 | Kyocera Corp | 発光装置 |
| WO2009099211A1 (ja) * | 2008-02-07 | 2009-08-13 | Mitsubishi Chemical Corporation | 半導体発光装置、バックライト、カラー画像表示装置、及びそれらに用いる蛍光体 |
| GB0916700D0 (en) * | 2009-09-23 | 2009-11-04 | Nanoco Technologies Ltd | Semiconductor nanoparticle-based materials |
| JP2011204986A (ja) * | 2010-03-26 | 2011-10-13 | Showa Denko Kk | ランプおよびランプの製造方法 |
| WO2012132236A1 (ja) * | 2011-03-31 | 2012-10-04 | パナソニック株式会社 | 半導体発光素子および発光装置 |
| US9443998B2 (en) * | 2013-03-14 | 2016-09-13 | Nanoco Technologies Ltd. | Multi-layer-coated quantum dot beads |
| WO2014178288A1 (ja) * | 2013-04-30 | 2014-11-06 | 創光科学株式会社 | 紫外線発光装置 |
| JP6232792B2 (ja) * | 2013-07-17 | 2017-11-22 | 日亜化学工業株式会社 | 発光装置 |
| CN103681990B (zh) * | 2013-12-11 | 2017-09-01 | 深圳市华星光电技术有限公司 | Led封装件及其制作方法 |
| CN203850332U (zh) | 2013-12-19 | 2014-09-24 | 易美芯光（北京）科技有限公司 | 一种新型的led封装结构 |
| KR20150092801A (ko) * | 2014-02-05 | 2015-08-17 | 삼성디스플레이 주식회사 | 발광 다이오드 패키지 및 그 제조 방법 |
| KR102098245B1 (ko) * | 2014-02-11 | 2020-04-07 | 삼성전자 주식회사 | 광원 패키지 및 그를 포함하는 표시 장치 |
| CN104167426B (zh) * | 2014-06-03 | 2017-08-01 | 上海天马有机发光显示技术有限公司 | 一种有机发光二极管显示面板及其制作方法和显示装置 |
| US9620686B2 (en) * | 2015-01-28 | 2017-04-11 | Apple Inc. | Display light sources with quantum dots |
| CN106299076B (zh) * | 2015-05-19 | 2019-02-01 | 青岛海信电器股份有限公司 | 一种量子点发光元件、背光模组和显示装置 |
| CN105185890A (zh) * | 2015-08-10 | 2015-12-23 | 深圳市华星光电技术有限公司 | Led光源结构及其封装方法 |
| CN205452347U (zh) | 2015-09-29 | 2016-08-10 | 易美芯光（北京）科技有限公司 | 一种支架型量子点led封装结构 |
| CN105867026A (zh) * | 2016-06-03 | 2016-08-17 | 青岛海信电器股份有限公司 | 量子点光源器件、背光模组及液晶显示装置 |
| US10203547B2 (en) * | 2016-06-16 | 2019-02-12 | Hisense Electric Co., Ltd. | Quantum dot light emitting device, backlight module, and liquid crystal display device |
-
2017
- 2017-03-30 CN CN201710202967.1A patent/CN106981562B/zh active Active
- 2017-04-19 WO PCT/CN2017/081034 patent/WO2018176525A1/zh active Application Filing
- 2017-04-19 US US15/529,507 patent/US10134962B2/en active Active
- 2017-04-19 JP JP2019553554A patent/JP6852250B2/ja active Active
- 2017-04-19 PL PL17903598.5T patent/PL3605621T3/pl unknown
- 2017-04-19 KR KR1020197031577A patent/KR20190127932A/ko not_active Application Discontinuation
- 2017-04-19 EP EP17903598.5A patent/EP3605621B1/en active Active
Also Published As
| Publication number | Publication date |
|---|---|
| US20180309032A1 (en) | 2018-10-25 |
| JP2020512704A (ja) | 2020-04-23 |
| US10134962B2 (en) | 2018-11-20 |
| WO2018176525A1 (zh) | 2018-10-04 |
| EP3605621A1 (en) | 2020-02-05 |
| KR20190127932A (ko) | 2019-11-13 |
| EP3605621B1 (en) | 2022-03-23 |
| EP3605621A4 (en) | 2020-12-16 |
| JP6852250B2 (ja) | 2021-03-31 |
| CN106981562A (zh) | 2017-07-25 |
| PL3605621T3 (pl) | 2022-08-01 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN106981562B (zh) | 量子点led封装结构 | |
| CN107565003B (zh) | 量子点led封装结构 | |
| TWI457418B (zh) | 白光發光二極體裝置、發光裝置及液晶顯示器 | |
| CN206878027U (zh) | 一种新型的高色域发光器件 | |
| WO2016138693A1 (zh) | 白光led、背光模块及液晶显示装置 | |
| CN106816520A (zh) | 波长转换材料及其应用 | |
| KR20120009686A (ko) | 양자점 시트를 이용한 발광 다이오드 패키지, 양자점 시트를 이용한 백라이트 유닛 및 이들의 제조방법 | |
| KR20120118692A (ko) | 발광 소자 패키지 및 이를 이용한 발광 장치 | |
| CN107180908B (zh) | 一种led、背光模组及液晶显示装置 | |
| CN208284498U (zh) | 一种led器件、背光灯条和背光模组 | |
| WO2019140707A1 (zh) | 一种白光led及其制备方法和应用 | |
| CN103207476A (zh) | 一种led背光液晶显示装置及其发光材料的涂覆方法 | |
| TWI547208B (zh) | 有機電致發光裝置 | |
| CN102709480A (zh) | 有机电致发光器件及显示器 | |
| CN102282687B (zh) | 均匀颜色发光的led封装 | |
| US20130168714A1 (en) | Light emitting diode package structure | |
| CN205958891U (zh) | 背光模组和显示装置 | |
| KR20160038094A (ko) | 발광 다이오드의 색변환용 기판 및 그 제조방법 | |
| KR101752426B1 (ko) | 발광소자 및 이를 포함하는 발광다이오드 패키지 | |
| KR101641266B1 (ko) | 발광소자 패키지를 구비하는 디스플레이 장치 | |
| CN108461610B (zh) | 一种量子点led和制备方法 | |
| JP2006005336A (ja) | 発光ダイオードおよびその製造方法 | |
| TWI533479B (zh) | 封裝結構及其製作方法 | |
| TWI619269B (zh) | 發光二極體封裝結構 | |
| TWM341939U (en) | White light emitting diode module |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PB01 | Publication | ||
| PB01 | Publication | ||
| SE01 | Entry into force of request for substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| GR01 | Patent grant | ||
| GR01 | Patent grant | ||
| CP01 | Change in the name or title of a patent holder | ||
| CP01 | Change in the name or title of a patent holder |
Address after: 9-2 Tangming Avenue, Guangming New District, Shenzhen City, Guangdong Province Patentee after: TCL China Star Optoelectronics Technology Co.,Ltd. Address before: 9-2 Tangming Avenue, Guangming New District, Shenzhen City, Guangdong Province Patentee before: Shenzhen China Star Optoelectronics Technology Co.,Ltd. |