CN106887670A - The dipole antenna terahertz detector integrated with NMOS temperature sensors - Google Patents
The dipole antenna terahertz detector integrated with NMOS temperature sensors Download PDFInfo
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- CN106887670A CN106887670A CN201710106781.6A CN201710106781A CN106887670A CN 106887670 A CN106887670 A CN 106887670A CN 201710106781 A CN201710106781 A CN 201710106781A CN 106887670 A CN106887670 A CN 106887670A
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- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims abstract description 16
- 229910052710 silicon Inorganic materials 0.000 claims abstract description 16
- 239000010703 silicon Substances 0.000 claims abstract description 16
- 239000000758 substrate Substances 0.000 claims abstract description 15
- 238000005516 engineering process Methods 0.000 claims description 8
- 229910021420 polycrystalline silicon Inorganic materials 0.000 claims description 8
- 229920005591 polysilicon Polymers 0.000 claims description 8
- 238000000034 method Methods 0.000 abstract description 5
- 230000008569 process Effects 0.000 abstract description 3
- 230000008859 change Effects 0.000 description 7
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 5
- 238000010586 diagram Methods 0.000 description 4
- 230000008878 coupling Effects 0.000 description 3
- 238000010168 coupling process Methods 0.000 description 3
- 238000005859 coupling reaction Methods 0.000 description 3
- 230000010354 integration Effects 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- 238000010521 absorption reaction Methods 0.000 description 1
- 239000008186 active pharmaceutical agent Substances 0.000 description 1
- 230000008901 benefit Effects 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 230000000295 complement effect Effects 0.000 description 1
- 238000001514 detection method Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 230000005611 electricity Effects 0.000 description 1
- 230000005669 field effect Effects 0.000 description 1
- 230000006870 function Effects 0.000 description 1
- 230000036541 health Effects 0.000 description 1
- 238000003384 imaging method Methods 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 229910044991 metal oxide Inorganic materials 0.000 description 1
- 150000004706 metal oxides Chemical class 0.000 description 1
- 238000012544 monitoring process Methods 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 230000008447 perception Effects 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- 239000000523 sample Substances 0.000 description 1
- 230000035945 sensitivity Effects 0.000 description 1
- 239000000377 silicon dioxide Substances 0.000 description 1
- 238000004088 simulation Methods 0.000 description 1
- 230000009466 transformation Effects 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01Q—ANTENNAS, i.e. RADIO AERIALS
- H01Q1/00—Details of, or arrangements associated with, antennas
- H01Q1/12—Supports; Mounting means
- H01Q1/22—Supports; Mounting means by structural association with other equipment or articles
- H01Q1/2283—Supports; Mounting means by structural association with other equipment or articles mounted in or on the surface of a semiconductor substrate as a chip-type antenna or integrated with other components into an IC package
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01Q—ANTENNAS, i.e. RADIO AERIALS
- H01Q1/00—Details of, or arrangements associated with, antennas
- H01Q1/36—Structural form of radiating elements, e.g. cone, spiral, umbrella; Particular materials used therewith
- H01Q1/38—Structural form of radiating elements, e.g. cone, spiral, umbrella; Particular materials used therewith formed by a conductive layer on an insulating support
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- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Details Of Aerials (AREA)
- Variable-Direction Aerials And Aerial Arrays (AREA)
Abstract
The invention discloses a kind of dipole antenna terahertz detector integrated with NMOS temperature sensors, including silicon substrate and setting the first NMOS tube and the second NMOS tube on a silicon substrate；Two grids of NMOS tube are connected with respective drain electrode respectively；First NMOS tube drain electrode connection power supply；The source electrode of the first NMOS tube connects the drain electrode of the second NMOS tube, the source ground of the second NMOS tube；First NMOS tube is identical with the second NMOS tube, and both grid lengths are 1.28~128.25 μm, are used as dipole antenna.The terahertz detector, using the grid of NMOS tube as the dipole antenna configuration of detector, realizes antenna and temperature sensor is integrated under standard CMOS process, reduces chip area, cost-effective.
Description
Technical field
The present invention relates to semi-conductor electricity magnetic wave field of detecting, more particularly to a kind of dipole antenna and NMOS TEMPs
The terahertz detector of device integration.
Background technology
THz wave refers to a kind of electromagnetic wave between millimere-wave band and infrared band, and Terahertz frequency range is defined into
Between 0.3THz to 30THz (wavelength is 1mm~10 μm), belong to electronics and optical juncture area.THz wave is compared to x
Ray energy is lower, and, these characteristics cause terahertz imaging in safety monitoring, health care compared to visible light peneration more preferably
Aspect has huge development prospect.
The species of terahertz detector has a lot, and such as FET (Field Effect Transistor) of antenna coupling is certainly
The Terahertz hot-probing of mix probe, the schottky diode detector of antenna coupling, heterojunction detector and antenna coupling
Device etc..The characteristics of these detectors suffer from identical：Coupled by exploring antenna and perception device, and two portions
It is separate to divide.The temperature sensing portion that present Terahertz hot-probing is used uses PTAT mostly
(proportional to absolute temperature) circuit or triode equitemperature senser element, but PTAT
Circuit is very complicated, and required number of devices is more, occupies larger chip area, causes the increase on cost；Three poles
The devices such as pipe, diode relative NMOS under CMOS (Complementary Metal Oxide Semiconductor) technique
The area that pipe is occupied is bigger.On the other hand, sensor uses MEMS (Micro-Electro-Mechanical System) skill
Art, the technology difficulty and cost for being compared to CMOS technology needs are also to greatly increase.
The content of the invention
In order to solve the above-mentioned technical problem, a kind of dipole antenna of present invention offer is integrated with NMOS temperature sensors
Terahertz detector, it, using the grid of NMOS tube as the dipole antenna configuration of detector, is realized under standard CMOS process
Antenna and temperature sensor are integrated, reduce chip area, cost-effective.
Therefore, technical scheme is as follows：
A kind of dipole antenna terahertz detector integrated with NMOS temperature sensors, including silicon substrate and be arranged on
The first NMOS tube and the second NMOS tube on the silicon substrate；The grid of first NMOS tube drains with it and is connected；Described
The grid of two NMOS tubes drains with it and is connected；The first NMOS tube drain electrode connection power supply；The source electrode of first NMOS tube connects
Connect the drain electrode of the second NMOS tube, the source ground of second NMOS tube；First NMOS tube is identical with the second NMOS tube, and two
The grid length of person is 1.28~128.25 μm, is used as dipole antenna.
Further, the silicon substrate is made up of polysilicon resistance using CMOS standard technologies.
Further, the distance between grid of the grid of first NMOS tube and the second NMOS tube is 0.24~5 μm.
Further, a width of 0.24~10 μm of the grid of first, second NMOS tube.
The dipole antenna terahertz detector integrated with NMOS temperature sensors has the advantage that：
1) cost reduction.Other kinds of Terahertz temperature sensor is compared to, NMOS can use CMOS technology reality
Show, and other kinds of temperature sensor or use more complicated technique or more complicated circuit realiration, and
Chip area shared by integrative detection device is far smaller than other kinds of temperature sensor so that the cost of whole detector
Substantially reduce and be easily achieved.
2) antenna and nmos device is not influenceed to work independently.Antenna can be realized using the grid of NMOS tube as exploring antenna
With the integration of temperature sensor, temperature sensor can sense the change of temperature in very short distance, and will not shadow
Ring to NMOS effects in circuit.
3) polysilicon is used as antenna, the step of eliminate series resistance in circuit.Because polysilicon inherently has
Certain impedance, when being used as antenna, is equivalent to a preferable antenna and a resistant series, eliminates in design
Mono- trouble of resistance of Shi Zengjia, saves the area of chip.
4) dipole antenna employs two modes of NMOS tube series connection so that the ability of temperature sensing is relative to single
NMOS tube is greatly enhanced, and hygrosensor sensitivity is higher.
Brief description of the drawings
Fig. 1 is the schematic diagram of the dipole antenna terahertz detector integrated with NMOS temperature sensors；
Fig. 2 is NMOS Terahertz thermal detector circuit diagrams；
Fig. 3 is NMOS Terahertz thermal detector domain schematic diagrames；
Fig. 4 is NMOS Terahertz thermal detector output voltages --- temperature pattern；
Fig. 5 is 2.66THz dipole antenna S parameter images in embodiment 1；
Fig. 6 is 29.6THz dipole antenna S parameter images in embodiment 2.
Fig. 7 is 16.3THz dipole antenna S parameter images in embodiment 3.
Specific embodiment
Dipole antenna is made up of the vertical antenna of two quarter-wave length, and total length is half-wavelength, also referred to as
It is half-wave dipole.Because under CMOS standard technologies, the design is used the grid of NMOS tube as antenna, because grid
Material be polysilicon, polysilicon has certain impedance in itself, it is to avoid the problem of whole Antenna Impedance Matching.Whole terahertz
Hereby the operation principle of detector is as shown in Figure 1：1. what is 2. 3. represented is the THz wave of different frequency, and THz wave is in space
During the antenna being delivered on detector, due to every antenna length and can all match with a quarter of wavelength, antenna is just
As a good carrier absorption THz wave, and then heat can be produced on polysilicon dipole antenna, realize electromagnetism
The conversion of heat energy can be arrived.NMOS tube senses the temperature change of polysilicon dipole antenna, the change of output temperature sensor and produces
The magnitude of voltage of respective change.This process is completed by heat energy to electric transformation of energy, it is achieved thereby that the function of temperature sensing.
The circuit structure of terahertz detector is as shown in Fig. 2 the grid and drain electrode short circuit of NMOS tube, form diode-type
Connected mode, under this kind of connected mode, VGS-VTH＜ VDS, NMOS tube always works at saturation state, now nmos device
Shown in drain saturation current size such as formula (1)：
According to formula (1), we can draw the output voltage in circuit diagram, that is, VGSSize be：
I in formulaDWhat is represented is the drain voltage of NMOS tube, and W and L represents the channel width and channel length of NMOS, μ respectivelyn
What is represented is the mobility of electronics, CoxIt is unit area gate oxide capacitance, VGSRefer to gate source voltage, VTWhat is represented is threshold value
Voltage.
The length of dipole antenna can be calculated by formula (3) in ideal conditions：
Wherein, c=3 × 108, expression is the light velocity；What ν was represented is Terahertz frequency；What h was represented is dipole antenna list
The length of root antenna, now h is the antenna length in vacuum；h1The antenna length in silica dioxide medium is represented, what ε was represented
It is the relative dielectric constant in silica, averages 3.8 herein.Antenna length in silica dioxide medium is to refer to
Be the application NMOS tube grid length.In whole Terahertz frequency range, dipole antenna single antenna (i.e. NMOS tube grid
Pole) length in the range of 1.28um~~128.25um.Because the application is based on CMOS technology, in the manufacturing process of antenna
In, antenna is based on silicon substrate and surrounding is filled with silica dioxide medium, is influenceed by different materials, causes the size of antenna
Each frequency can not be accurate in the range of Terahertz frequency range.
In this detector, using constant current source, that is to say, that drain current is a constant numerical value, can be learnt
Output voltage mainly has mathematical relationship and threshold voltage between, and threshold voltage is influenceed by temperature, and this shows
In theory corresponding relation is there is between the output voltage and temperature of NMOS.According to specific simulation result as shown in figure 5,
It is linear relationship between the output voltage and temperature of NMOS under given channel width-over-length ratio.The environment that abscissa is represented in Fig. 5
The change of temperature, ordinate is the change numerical value of output voltage i.e. gate source voltage VGS, is in channel length L in NMOS tube
=250nm, channel width W=250nm, the image that slotting index is obtained when being 1, voltage now is 0.8v, the size of current source
It is 2uA.According to Fig. 5 it is known that the change of every degree Celsius of the output voltage of dipole antenna NMOS detectors turns to a 1.36mv left sides
It is right.
Technical scheme is described in detail below in conjunction with drawings and Examples.
Embodiment 1
A kind of dipole antenna terahertz detector integrated with NMOS temperature sensors, including silicon substrate and be arranged on
The first NMOS tube 2 and the second NMOS tube 3 on silicon substrate 1；Under the frequency of 2.66THz, can according to formula (3) and formula (4)
The brachium (i.e. the grid length of first and second NMOS tube) that dipole antenna must be corresponded to is 14.5um.After through emulation, two antennas it
Between distance (the grid spacing of first and second NMOS tube) be 1um, the width of each antenna (grid of first and second NMOS tube) is
3um。
The S11 parametric images of dipole antenna are as shown in Figure 5 under 2.66THz.Due toWhat is represented is day
The absorptivity of line, the smaller absorptivity for showing antenna of the numerical value of whole expression formula is higher, it can be seen that S11Parameter is left in 2.66THz
Minimum value, that is, the antenna efficiency highest in 2.66THz are reached when right, frequency selectivity performance is fine.
Embodiment 2
A kind of dipole antenna terahertz detector integrated with NMOS temperature sensors, including silicon substrate and be arranged on
The first NMOS tube 2 and the second NMOS tube 3 on silicon substrate 1；Under the frequency of 29.6THz, can according to formula (3) and formula (4)
The brachium (i.e. the grid length of first and second NMOS tube) that dipole antenna must be corresponded to is 1.3um.After through emulation, two antennas it
Between distance (the grid spacing of first and second NMOS tube) be 0.34um, the width of each antenna (grid of first and second NMOS tube)
It is 0.34um.
The S11 parametric images of dipole antenna are as shown in Figure 6 under 29.6THz.It can be seen that, S11 parameters are whole in 29.6THz
The numerical value of individual image is minimum, shows that antenna performance now is best, has also indicated that the antenna length being now calculated can
Echoed well with Terahertz frequency.
Embodiment 3
A kind of dipole antenna terahertz detector integrated with NMOS temperature sensors, including silicon substrate and be arranged on
The first NMOS tube 2 and the second NMOS tube 3 on silicon substrate 1；Under the frequency of 16.3THz, can according to formula (3) and formula (4)
The brachium (i.e. the grid spacing of first and second NMOS tube) of dipole antenna must be corresponded to for 1um, each antenna (first and second NMOS tube
Grid) width be 0.24um.
The S11 parametric images of dipole antenna are as shown in Figure 7 under 16.3THz.It can be seen that, S11 parameters are whole in 16.3THz
The numerical value of individual image is minimum, shows that antenna performance now is best, has also indicated that the antenna length being now calculated can
Echoed well with Terahertz frequency.
Claims (5)
1. a kind of dipole antenna terahertz detector integrated with NMOS temperature sensors, it is characterised in that：Including silicon lining
Bottom (1) and the first NMOS tube (2) and the second NMOS tube (3) that are arranged on the silicon substrate (1)；First NMOS tube (2)
Grid (201) drained with it (202) be connected；The grid (301) of second NMOS tube (3) drained with it (302) be connected；Institute
State the first NMOS tube (2) drain electrode (202) and connect power supply (204)；Source electrode (203) connection second of first NMOS tube (2)
The drain electrode of NMOS tube (3), source electrode (303) ground connection of second NMOS tube (3)；First NMOS tube (2) and the 2nd NMOS
Pipe (3) is identical, and its grid is used as dipole antenna, and grid (201,301) length of first, second NMOS tube is
1.28~128.25 μm.
2. the dipole antenna as claimed in claim 1 terahertz detector integrated with NMOS temperature sensors, its feature exists
In：The silicon substrate is made up of polysilicon resistance using CMOS standard technologies.
3. the dipole antenna as claimed in claim 1 terahertz detector integrated with NMOS temperature sensors, its feature exists
In：The distance between the grid of first NMOS tube and the grid of the second NMOS tube are 0.24~5 μm.
4. the dipole antenna as claimed in claim 1 terahertz detector integrated with NMOS temperature sensors, its feature exists
In：A width of 0.24~10 μm of the grid (201,301) of first, second NMOS tube.
5. the dipole antenna as claimed in claim 1 terahertz detector integrated with NMOS temperature sensors, its feature exists
In：After second NMOS tube (3) rotates 180 ° for the first NMOS tube (2), the first NMOS tube is arranged on silicon substrate (1)
(2) downside.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201710106781.6A CN106887670A (en) | 2017-02-27 | 2017-02-27 | The dipole antenna terahertz detector integrated with NMOS temperature sensors |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201710106781.6A CN106887670A (en) | 2017-02-27 | 2017-02-27 | The dipole antenna terahertz detector integrated with NMOS temperature sensors |
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| CN106887670A true CN106887670A (en) | 2017-06-23 |
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| CN201710106781.6A Pending CN106887670A (en) | 2017-02-27 | 2017-02-27 | The dipole antenna terahertz detector integrated with NMOS temperature sensors |
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Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN106921020A (en) * | 2017-02-27 | 2017-07-04 | 天津大学 | The THz wave thermal detector of the polysilicon antenna coupling based on CMOS technology |
| US10833668B2 (en) | 2019-03-07 | 2020-11-10 | Analog Devices International Unlimited Company | Integrated and distributed over temperature protection for power management switches |
| CN112140092A (en) * | 2020-09-29 | 2020-12-29 | 西安交通大学 | Terahertz wave induction-based micro robot |
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| US20140117237A1 (en) * | 2012-10-30 | 2014-05-01 | International Business Machines Corporation | High responsivity device for thermal sensing in a terahertz radiation detector |
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| CN104900999A (en) * | 2015-05-13 | 2015-09-09 | 南京大学 | Terahertz double-frequency antenna based on integrated circuit technology |
| CN105449030A (en) * | 2015-12-29 | 2016-03-30 | 南京大学 | Terahertz detector for optical antennas based on active area material |
| CN105679778A (en) * | 2016-03-04 | 2016-06-15 | 天津大学 | Terahertz detector chip |
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2017
- 2017-02-27 CN CN201710106781.6A patent/CN106887670A/en active Pending
Patent Citations (9)
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|---|---|---|---|---|
| US20060279470A1 (en) * | 2002-05-20 | 2006-12-14 | Raytheon Company | Series fed amplified antenna reflect array |
| CN101666833A (en) * | 2009-09-28 | 2010-03-10 | 王树甫 | CMOS difference radio-frequency signal amplitude detection circuit |
| CN102575961A (en) * | 2009-10-23 | 2012-07-11 | 国际商业机器公司 | Terahertz detector comprising a capacitively coupled antenna |
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Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN106921020A (en) * | 2017-02-27 | 2017-07-04 | 天津大学 | The THz wave thermal detector of the polysilicon antenna coupling based on CMOS technology |
| US10833668B2 (en) | 2019-03-07 | 2020-11-10 | Analog Devices International Unlimited Company | Integrated and distributed over temperature protection for power management switches |
| CN112140092A (en) * | 2020-09-29 | 2020-12-29 | 西安交通大学 | Terahertz wave induction-based micro robot |
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