CN106876578A - Acoustic wave device and its wafer-level packaging method - Google Patents
Acoustic wave device and its wafer-level packaging method Download PDFInfo
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- CN106876578A CN106876578A CN201710132928.9A CN201710132928A CN106876578A CN 106876578 A CN106876578 A CN 106876578A CN 201710132928 A CN201710132928 A CN 201710132928A CN 106876578 A CN106876578 A CN 106876578A
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- 238000004806 packaging method and process Methods 0.000 title claims abstract description 20
- 239000000758 substrate Substances 0.000 claims abstract description 154
- 229910052751 metal Inorganic materials 0.000 claims description 41
- 239000002184 metal Substances 0.000 claims description 41
- 238000010897 surface acoustic wave method Methods 0.000 claims description 17
- 229910001218 Gallium arsenide Inorganic materials 0.000 claims description 14
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims description 11
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 claims description 11
- 239000010949 copper Substances 0.000 claims description 11
- 229910052802 copper Inorganic materials 0.000 claims description 11
- 239000011135 tin Substances 0.000 claims description 11
- 229910052718 tin Inorganic materials 0.000 claims description 11
- 238000005516 engineering process Methods 0.000 claims description 10
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- 238000007747 plating Methods 0.000 claims description 10
- XEEYBQQBJWHFJM-UHFFFAOYSA-N Iron Chemical compound [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 claims description 8
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 claims description 8
- KDLHZDBZIXYQEI-UHFFFAOYSA-N Palladium Chemical compound [Pd] KDLHZDBZIXYQEI-UHFFFAOYSA-N 0.000 claims description 8
- 239000004411 aluminium Substances 0.000 claims description 8
- 229910052782 aluminium Inorganic materials 0.000 claims description 8
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 8
- 238000009713 electroplating Methods 0.000 claims description 8
- 239000000853 adhesive Substances 0.000 claims description 6
- 230000001070 adhesive effect Effects 0.000 claims description 6
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 claims description 5
- 229910052737 gold Inorganic materials 0.000 claims description 5
- 239000010931 gold Substances 0.000 claims description 5
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 claims description 4
- 229910052742 iron Inorganic materials 0.000 claims description 4
- 238000004519 manufacturing process Methods 0.000 claims description 4
- 229910052759 nickel Inorganic materials 0.000 claims description 4
- 229910052763 palladium Inorganic materials 0.000 claims description 4
- 229910052709 silver Inorganic materials 0.000 claims description 4
- 239000004332 silver Substances 0.000 claims description 4
- 238000006243 chemical reaction Methods 0.000 claims description 3
- 230000005611 electricity Effects 0.000 claims 1
- 238000005538 encapsulation Methods 0.000 abstract description 7
- 239000004065 semiconductor Substances 0.000 abstract description 2
- 238000010586 diagram Methods 0.000 description 15
- 239000010408 film Substances 0.000 description 7
- 239000011358 absorbing material Substances 0.000 description 6
- 239000003292 glue Substances 0.000 description 5
- 239000000919 ceramic Substances 0.000 description 4
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- SWPMTVXRLXPNDP-UHFFFAOYSA-N 4-hydroxy-2,6,6-trimethylcyclohexene-1-carbaldehyde Chemical compound CC1=C(C=O)C(C)(C)CC(O)C1 SWPMTVXRLXPNDP-UHFFFAOYSA-N 0.000 description 3
- 238000004026 adhesive bonding Methods 0.000 description 3
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Classifications
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N30/00—Piezoelectric or electrostrictive devices
- H10N30/01—Manufacture or treatment
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N30/00—Piezoelectric or electrostrictive devices
- H10N30/01—Manufacture or treatment
- H10N30/02—Forming enclosures or casings
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N35/00—Magnetostrictive devices
- H10N35/01—Manufacture or treatment
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- Manufacturing & Machinery (AREA)
- Surface Acoustic Wave Elements And Circuit Networks Thereof (AREA)
Abstract
The present invention discloses a kind of acoustic wave device and its wafer-level packaging method, is related to semiconductor applications.Wherein acoustic wave device includes substrate and acoustic wave device, substrate is provided with cavity, and acoustic wave device is combined with the upper surface of substrate, so that cavity turns into airtight chamber, the lower surface of substrate is provided with the pin pad of acoustic wave device, and the pin pad of acoustic wave device is connected with the pin pad of acoustic wave device., by the direct encapsulation that acoustic wave device is carried out in substrate, achievable size is small, makes simple, cheap, and the sealed in unit being easily integrated for the present invention.
Description
Technical field
The present invention relates to semiconductor applications, more particularly to a kind of acoustic wave device and its wafer-level packaging method.
Background technology
The pattern supported with mobile radio system and frequency range are continuously increased, Current wireless communication mobile terminal
RF front end structure also become to become increasingly complex.
Fig. 1 is the communication mobile terminal of multiple frequency ranges in support 2G, 3G, 4G multi-mode and each pattern
RF front end structure.108 is the RF transceiver chip of mobile terminal, and the radiofrequency signal for being responsible for producing baseband chip sends
Radiofrequency signal to corresponding power amplifier chip and to receiving is processed.107th, 105,106 is respectively 2G power
Amplifier chip, 3G/4G single-frequency power amplifier chip, 3G/4G multimode multi-frequency power amplifier chips, these chips all to from
The radiofrequency signal come transmitted by RF transceiver 108 carries out power amplification.104 is a series of duplexer chips, each FDD
The separation that the frequency range of pattern is required for a corresponding duplexer chip to be launched and received signal.103 is one integrated
Throwing radio-frequency antenna switch chip the hilted broadsword of low pass filter more, for by the output signal of multiple radio-frequency power amplifiers and
The radiofrequency signal that multichannel is received from antenna carries out branch separation so that multiple radio-frequency transmissions paths and multiple radio frequency reception lead to
Road can share same primary antenna 101.Usual all integrated two LPFs in radio-frequency antenna switch chip 103 are thrown hilted broadsword more
Device, is respectively used to filter the harmonic wave and 2G low-frequency ranges (820- of 2G high bands (1710-1910MHz) radio-frequency power amplifier
920MHz) the harmonic wave of radio-frequency power amplifier.102 are one is connected to primary antenna 101 and multimode multi-frequency radio frequency duplexer core
Antenna match tuning chip between piece 103, for carrying out real-time regulation to Antenna Impedance Matching to ensure that good antenna hinders
Anti- matching.111 is a diversity radio-frequency antenna switch chip, for entering to the radiofrequency signal received from diversity antenna 112
Row branch is separated.110 is a series of filter chips, for each road radio frequency exported to diversity radio-frequency antenna switch chip 111
Signal is filtered, and its output signal is sent to the phase of RF transceiver chip 108 further through receiving path switch chip 109
Answer receiving port.
As seen from Figure 1, with the growth of multimode multi-frequency radio frequency front-end module demand, duplexer and wave filter will turn into
Main device.Filter segment is mainly realized using discrete inductance, capacitor element, or is realized using IPD techniques；Duplex
Device is then mainly realized using acoustic wave devices such as surface acoustic wave (SAW), bulk acoustic wave (BAW), film bulk acoustics (BAW).Surface acoustic wave
It is that sound wave is propagated in body surface finite depth, is propagated along solid and Air Interface, meanwhile, surface acoustic wave is a kind of energy
Amount concentrates on the elastic wave of dielectric surface propagation；What bulk acoustic wave and film bulk acoustic were utilized is that bulk acoustic wave signal is passed in different medium
Sowing time, reflected with the boundary place of air in two electrodes, bulk acoustic wave and film bulk acoustic form a sky with substrate surface
Air cavity, sound wave is limited in piezoelectric vibration chamber.As can be seen here, for surface acoustic wave, bulk acoustic wave and film bulk acoustic are all needed
A closed cavity, the propagation path for limiting sound wave are formed at the interface with substrate.What acoustic wave device made
Wave filter and duplexer, insertion loss are small, the advantages of Out-of-band rejection is good, are widely used in wireless communication field.The side of encapsulation
Formula is broadly divided into:Metal Packaging, Plastic Package, surface mount packages.Their a minimum of two parts compositions, that is, the substrate for encapsulating and upper
Lid.A small amount of binder is coated in substrate, then chip is attached to above.By curing process, chip is firmly attached to
In substrate.
Metal Packaging：It is made up of the metallic substrates comprising insulation and grounding pin and metal cap.It is put into pulse point
Sealing machine carries out sealing cap, obtains the good finished product of sealing.It is good that the common technique of Metal Packaging can just produce sealing
Good high frequency filter, simultaneously because mechanical properties strength is high, can be with the big chip of encapsulation volume.
Plastic Package：It is made up of groove and cap two parts, chip is connected on lead frame by bonding line, the lead of metal
Frame is stretched into groove from one side, and finally two parts are bonded together.The main advantage of this encapsulation technology is low cost.
Surface mount packages：Ceramic SMD (Surface Mounted Device:Surface mount device), using substrate and hat shape
Upper lid.Two kinds of technologies are employed according to different purposes：For high-frequency element and high frequency accuracy device high, encapsulated using metal level；
For low frequency device, encapsulated using plasticity sound-absorbing material.
Fig. 2 is to encapsulate schematic diagram using metal level.Wherein 210 is substrate, and material is based on ceramic LTCC or HTCC techniques.
203 is acoustic wave filter or duplexer, by the way of back-off, by copper projection or tin ball 204,205 and substrate 210
Pad 206,207 is connected；And by the pad 211 of the interior metal cabling of substrate 210 and via 208,209 and the bottom of substrate 210,
212 connections, draw the pin of acoustic wave device.201 is metal cap, is connected with substrate 210 by welding or gluing mode；Metal
Polymeric material 202 is inserted in space between cap 201 and acoustic wave device, for supporting metal cap, prevents metal cap from collapsing.213 are
The airtight cavity formed between acoustic wave device and substrate.
Fig. 3 is to encapsulate schematic diagram using plasticity sound-absorbing material.Wherein 310 is substrate, material be based on ceramic LTCC or
HTCC techniques.303 is acoustic wave filter or duplexer, by the way of back-off, by copper projection or tin ball 304,305 with
Pad 306,307 on 310 is connected；And welded with the bottom of substrate 310 by the interior metal cabling of substrate 310 and via 308,309
Disk 311,312 is connected, and draws the pin of acoustic wave device.301 is plasticity sound-absorbing material, by gluing mode and the phase of substrate 310
Even；Polymeric material 302 is inserted in space between plasticity sound-absorbing material and acoustic wave device, for supporting plasticity sound-absorbing material, is prevented
Plasticity sound-absorbing material is collapsed.313 is the airtight cavity formed between acoustic wave device and substrate.
Fig. 4 is the schematic diagram for being based on wafer-level packaging in the prior art, wherein 401 is acoustic wave device, in acoustic wave device
Upper surface makes wave filter or duplexer.402 is substrate, is made of Si techniques.403 is shading ring, by welding or glue
Viscous mode, acoustic wave device 401 is linked together with substrate 402, is played a part of to shield and is supported；Acoustic wave device 401,
Airtight cavity 404 is formd between substrate 402 and shading ring 403, there must be between acoustic wave device and substrate is realized
Individual cavity.Meanwhile, the input and output pin 405,406 of acoustic wave device is drawn in the upper surface growth of acoustic wave device 401, along screen
The outer surface of ring and substrate is covered, the upper surface of substrate is guided to, by copper projection or tin ball 407,408 by the pin of acoustic wave device
Draw.
Metal Packaging and plastic package have the shortcomings that common, there is long pin, cause the volume of device too big, very
Hardly possible is integrated with RF front-end module.Surface mount packages based on ceramics, although be widely used, but complex manufacturing technology, pottery
Ceramic material HTCC and LTCC price, and be difficult to be integrated with other techniques, meanwhile, it is existing based on wafer-level packaging
Acoustic wave device, there is also that technique is relatively difficult to achieve, the defect of high cost.Accordingly, it would be desirable to find a kind of method, size is small, system
Make simple, it is cheap, and it is easy to the method for packing integrated with other devices.
The content of the invention
The embodiment of the present invention provides a kind of acoustic wave device and its wafer-level packaging method, by directly carrying out sound in substrate
The encapsulation of wave device, achievable size is small, makes simple, cheap, and the sealed in unit being easily integrated.
According to an aspect of the present invention, there is provided a kind of acoustic wave device, including substrate and acoustic wave device, wherein：
Substrate is provided with cavity, and acoustic wave device is combined with the upper surface of substrate, so that cavity turns into airtight chamber；
The lower surface of substrate is provided with the pin pad of acoustic wave device, the pin pad of acoustic wave device and the pin of acoustic wave device
Pad is connected.
In one embodiment, the pin pad of acoustic wave device is by electroplating the pin pad of metal routing and acoustic wave device
Connection.
In one embodiment, the material of plating metal routing is gold, silver, copper, iron, aluminium, nickel, palladium or tin.
In one embodiment, plating metal routing prolongs along the substrate side neighbouring with the pin pad of acoustic wave device
Stretch.
In one embodiment, substrate side and the angle of the lower surface of substrate are obtuse angle.
In one embodiment, the lower surface of substrate is identical with the angle of two neighboring substrate side.
In one embodiment, the pin pad of acoustic wave device is aluminium projection, copper projection or tin ball.
In one embodiment, acoustic wave device is combined by adhesive means with the upper surface of substrate.
In one embodiment, the pin pad and substrate of acoustic wave device are located on the same surface of acoustic wave device.
In one embodiment, depth of the height of substrate more than cavity.
In one embodiment, acoustic wave device includes surface acoustic wave SAW filter, bulk acoustic wave BAW wave filters or thin-film body
Sound wave FBAR wave filters, or including surface acoustic wave SAW duplexers, bulk acoustic wave BAW duplexers or film bulk acoustic FBAR duplex
Device, or including the device using the manufacture of SAW, BAW or FBAR technology.
In one embodiment, above-mentioned acoustic wave device also includes substrate, wherein：
Substrate is arranged on substrate.
In one embodiment, acoustic wave device also includes the electronic device heterogeneous with acoustic wave device being arranged on substrate,
Wherein：
The pin pad pin pad connection corresponding with acoustic wave device of electronic device.
In one embodiment, the pin pad of electronic device is corresponding with acoustic wave device especially by substrate metal cabling
Pin pad connection.
In one embodiment, electronic device is included based on GaAs HBT techniques, GaAs pHEMT techniques or GaN techniques
Radio-frequency power amplifier, based on the low-noise amplifier of GaAs pHEMT techniques, based on the switch of GaAs pHEMT techniques, is based on
At least one of wave filter of IPD techniques.
In one embodiment, the driving stage circuit of electronic device including radio-frequency power amplifier, on-off circuit, power supply with
At least one of track and envelope-tracking circuit, DC-to-dc change-over circuit, analog to digital conversion circuit, D/A converting circuit.
According to another aspect of the present invention, there is provided a kind of wafer-level packaging method of acoustic wave device, including：
Cavity is set in substrate；
Acoustic wave device is combined with the upper surface of substrate, so that cavity turns into airtight chamber；
The pin pad of acoustic wave device is connected with the pin pad of acoustic wave device, the pin pad of wherein acoustic wave device sets
Put the lower surface in substrate.
In one embodiment, the pin of the pin pad of acoustic wave device and acoustic wave device is welded by electroplating metal routing
Disk is connected.
In one embodiment, plating metal routing prolongs along the substrate side neighbouring with the pin pad of acoustic wave device
Stretch.
In one embodiment, substrate side and the angle of the lower surface of substrate are obtuse angle.
In one embodiment, the lower surface of substrate is identical with the angle of two neighboring substrate side.
In one embodiment, acoustic wave device is combined with the upper surface of substrate by adhesive means.
In one embodiment, the pin pad and substrate of acoustic wave device are arranged on the same surface of acoustic wave device.
In one embodiment, depth of the height of substrate more than cavity.
In one embodiment, substrate is arranged on substrate.
In one embodiment, the electronic device heterogeneous with acoustic wave device is arranged on substrate, wherein electronic device
The pin pad connection corresponding with acoustic wave device of pin pad.
In one embodiment, it is by substrate metal cabling, the pin pad of electronic device is corresponding with acoustic wave device
Pin pad is connected.
By referring to the drawings to the detailed description of exemplary embodiment of the invention, further feature of the invention and its
Advantage will be made apparent from.
Brief description of the drawings
In order to illustrate more clearly about the embodiment of the present invention or technical scheme of the prior art, below will be to embodiment or existing
The accompanying drawing to be used needed for having technology description is briefly described, it should be apparent that, drawings in the following description are only this
Some embodiments of invention, for those of ordinary skill in the art, without having to pay creative labor, may be used also
Other accompanying drawings are obtained with according to these accompanying drawings.
Fig. 1 is wireless communication system RF front end structure schematic diagram in the prior art.
Fig. 2 is that acoustic wave device encapsulates a kind of schematic diagram of scheme in the prior art.
Fig. 3 is the schematic diagram that acoustic wave device encapsulates another program in the prior art.
Fig. 4 is the schematic diagram that acoustic wave device encapsulates another aspect in the prior art.
Fig. 5 is the schematic diagram of acoustic wave device one embodiment of the present invention.
Fig. 6 is the schematic diagram of another embodiment of acoustic wave device of the present invention.
Fig. 7 is the schematic diagram of the another embodiment of acoustic wave device of the present invention.
Fig. 8 is the schematic diagram of wafer-level packaging method one embodiment of acoustic wave device of the present invention.
Fig. 9 to Figure 20 is the schematic diagram of wafer-level packaging method one embodiment of acoustic wave device of the present invention.
Specific embodiment
Below in conjunction with the accompanying drawing in the embodiment of the present invention, the technical scheme in the embodiment of the present invention is carried out clear, complete
Site preparation is described, it is clear that described embodiment is only a part of embodiment of the invention, rather than whole embodiments.Below
Description only actually at least one exemplary embodiment is illustrative, and never conduct is to the present invention and its application or makes
Any limitation.Based on the embodiment in the present invention, those of ordinary skill in the art are not making creative work premise
Lower obtained every other embodiment, belongs to the scope of protection of the invention.
Unless specifically stated otherwise, the part and positioned opposite, the digital table of step for otherwise illustrating in these embodiments
Do not limited the scope of the invention up to formula and numerical value.
Simultaneously, it should be appreciated that for the ease of description, the size of the various pieces shown in accompanying drawing is not according to reality
Proportionate relationship draw.
May be not discussed in detail for technology, method and apparatus known to person of ordinary skill in the relevant, but suitable
In the case of, the technology, method and apparatus should be considered as authorizing a part for specification.
In all examples shown here and discussion, any occurrence should be construed as merely exemplary, without
It is as limitation.Therefore, the other examples of exemplary embodiment can have different values.
It should be noted that：Similar label and letter represents similar terms in following accompanying drawing, therefore, once a certain Xiang Yi
It is defined in individual accompanying drawing, then it need not be further discussed in subsequent accompanying drawing.
Fig. 5 is the schematic diagram of acoustic wave device one embodiment of the present invention.As shown in figure 5, the acoustic wave device includes substrate 51
With acoustic wave device 52.Wherein：
Substrate 51 is provided with cavity 511, and acoustic wave device 52 is combined with the upper surface of substrate 51, so that cavity 511 turns into close
Closed chamber room.
Alternatively, acoustic wave device 52 is combined by adhesive means with the upper surface of substrate 51.For example, acoustic wave device 52 passes through
Glue 512 is combined with the upper surface of substrate 51.
The lower surface of substrate 51 is provided with the pin pad 531,532 of acoustic wave device, the pin pad 531,532 of acoustic wave device
It is connected with the pin pad 521,522 of acoustic wave device 52 respectively.
Alternatively, the pin pad 521,522 and substrate 51 of acoustic wave device 52 are located on the same surface of acoustic wave device.
Wherein, substrate 51 is the substrate based on Si process materials.The height of substrate 51 is more than the depth of cavity 511, cavity
511 depth is more than or equal to 1 μm.The active area in acoustic wave device 52 must be protected using passivation simultaneously.
Alternatively, the pin pad of acoustic wave device is connected by electroplating metal routing with the pin pad of acoustic wave device.Example
Such as, the pin pad 531 of acoustic wave device is connected by electroplating metal routing 541 with the pin pad 521 of acoustic wave device 52, sound wave
The pin pad 532 of equipment is connected by electroplating metal routing 542 with the pin pad 522 of acoustic wave device 52.Wherein, gold is electroplated
The material for belonging to cabling can be gold, silver, copper, iron, aluminium, nickel, palladium or tin etc..
Additionally, plating metal routing extends along the substrate side neighbouring with the pin pad of acoustic wave device, sound wave is set
Standby pin pad is attached with the pin pad of acoustic wave device, to draw the pin of acoustic wave device.As shown in figure 5, base
Bottom side is obtuse angle with angle a, b of the lower surface of substrate, i.e., 180 degree is less than more than 90 degree.Wherein, angle a, b can with identical,
Also can be different.
Alternatively, the pin pad 531,532 of acoustic wave device can be aluminium projection, copper projection or tin ball.
Alternatively, acoustic wave device 52 may include surface acoustic wave SAW filter, bulk acoustic wave BAW wave filters or film bulk acoustic
FBAR wave filters, or including surface acoustic wave SAW duplexers, bulk acoustic wave BAW duplexers or film bulk acoustic FBAR duplexers, or
Person includes the device using the manufacture of SAW, BAW or FBAR technology.
Based on the acoustic wave device that the above embodiment of the present invention is provided, by the envelope that acoustic wave device is directly carried out in substrate
Dress, achievable size is small, makes simple, cheap, and the sealed in unit being easily integrated.
Fig. 6 is the schematic diagram of another embodiment of acoustic wave device of the present invention.As shown in fig. 6, substrate 51 can be placed into substrate
On 55.
Multiple substrates being combined with acoustic wave device as shown in Figure 5 can be set on substrate 55, can also be on substrate 55
Set and the heterogeneous electronic device of acoustic wave device.As shown in fig. 6, being set and the heterogeneous electronics device of acoustic wave device 52 on substrate 55
Part 56.Wherein, the pin pad 561 of electronic device 56 pin pad 531 corresponding with acoustic wave device is connected.
Alternatively, the pin pad 561 of electronic device 56 is corresponding with acoustic wave device especially by substrate metal cabling L1
Pin pad 531 is connected.
Alternatively, electronic device 56 may include the radio frequency based on GaAs HBT techniques, GaAs pHEMT techniques or GaN techniques
Power amplifier, based on the low-noise amplifier of GaAs pHEMT techniques, based on the switch of GaAs pHEMT techniques, based on IPD
At least one of wave filter of technique.
Additionally, electronic device 56 may also include the driving stage circuit of radio-frequency power amplifier, on-off circuit, power supply trace and
At least one of envelope-tracking circuit, DC-to-dc change-over circuit, analog to digital conversion circuit, D/A converting circuit.
Alternatively, multiple different types of electronic devices can be set on substrate 55.As shown in fig. 7, being set on substrate 55
Put outside acoustic wave device 52 and the heterogeneous electronic device 56 of acoustic wave device 52, also can be set another heterogeneous with acoustic wave device 52
Electronic device 57.Wherein the pin pad 571 of electronic device 57 can be welded by metal routing L2 pins corresponding with acoustic wave device
Disk 532 is connected.
That is, can integrated multiple acoustic wave devices and relevant electronic device on same substrate 55.
Fig. 8 is the schematic diagram of wafer-level packaging method one embodiment of acoustic wave device of the present invention.Wherein：
Step 801, sets cavity in substrate.
Wherein, depth of the height of substrate more than cavity.
Step 802, acoustic wave device is combined with the upper surface of substrate, so that cavity turns into airtight chamber.
For example, acoustic wave device can be combined with the upper surface of substrate by adhesive means.
Step 803, the pin pad of acoustic wave device is connected with the pin pad of acoustic wave device, wherein the pipe of acoustic wave device
Pin pad is arranged on the lower surface of substrate.
Wherein, the pin pad of acoustic wave device can be connected with the pin pad of acoustic wave device by electroplating metal routing.
Plating metal routing extends along the substrate side neighbouring with the pin pad of acoustic wave device, the lower surface of substrate side and substrate
Angle be obtuse angle.The angle of the lower surface of substrate and two neighboring substrate side can be with identical, also can be different.
Alternatively, the pin pad and substrate of acoustic wave device are arranged on the same surface of acoustic wave device.
Based on the acoustic wave device wafer-level packaging method that the above embodiment of the present invention is provided, by directly being carried out in substrate
The encapsulation of acoustic wave device, achievable size is small, makes simple, cheap, and the sealed in unit being easily integrated.
Alternatively, above-mentioned substrate can be arranged on substrate.The electronic device heterogeneous with acoustic wave device can be also arranged on
On substrate, the pin pad pin pad connection corresponding with acoustic wave device of wherein electronic device.
Wherein, the pin pad of electronic device pin pad corresponding with acoustic wave device can be connected by substrate metal cabling
Connect.
Wafer-level packaging method of the invention is illustrated below by a specific example.
As shown in Figure 9 and Figure 10, the etch chamber in high resistant Si substrates 91 (the usually wafer of 8 inches or 12 inches of diameter)
Body 92.Wherein Fig. 9 is top view, and Figure 10 is side view.
The size and depth of cavity can be set according to actual needs, and the depth of cavity is typically greater than or equal to 1 μm.
As is illustrated by figs. 11 and 12, in one layer of glue 93 of surface brush of substrate 91, the thickness of glue is less than 10 μm, typically takes 3 μm.
Wherein Figure 11 is top view, and Figure 12 is side view.
As shown in Figure 13 and Figure 14, acoustic wave device 94 is attached in substrate 91 using upside-down mounting mode, and by acoustic wave device 94
The embedment glue of pad 941,942 in so that each acoustic wave device is closely connected with substrate 91, so that cavity 92 is as closed chamber
Body.Wherein Figure 13 is top view, and Figure 14 is side view.
As shown in Figure 15 and Figure 16, temporary support wafer 95 is connected by the upper surface of gluing mode and acoustic wave device 94
Connect, to provide support carrier for follow-up thinning operation.Wherein Figure 15 is top view, and Figure 16 is side view.
As shown in figure 17, reduction processing is carried out to substrate 91, and substrate 91 is cut to remove the periphery of substrate 91
Region, to expose the pad of acoustic wave device 94.Wherein during carrying out cutting thin and cutting to substrate 91, make substrate 91
Side forms acclive inclined-plane.Wherein, substrate side and the angle of substrate lower surface are obtuse angle, substrate lower surface and two sides
The angle in face can be with identical, also can be different.
As shown in figure 18, draw plating metal routing 961,962 respectively from acoustic wave device pin 941,942, electroplate metal
Cabling 961,962 extends to the lower surface of substrate 91 respectively along the adjacent side of substrate 91, electroplates the material of metal routing
Matter is gold, silver, copper, iron, aluminium, nickel, palladium, tin etc..
As shown in figure 19, in the lower surface of substrate 91, aluminium is grown on the surface of plating metal routing 961,962 respectively convex
Post, copper projection or tin ball, to form the pin pad 971,972 of acoustic wave device.
As shown in figure 20, solution bonding removes support wafer 95, and now the wafer-level packaging sound wave based on high resistant Si substrates sets
It is standby to be formed.
It should be noted that in above-mentioned method for packing flow, substrate is usually the high resistant Si of 8 inches or 12 inches of diameter
Wafer, its resistance is higher than 1000ohmcm, and acoustic wave device is mounted onto substrate via Pick-and-Place flows back-off.Face
When support wafer temporary support effect, the usually wafer consistent with substrate wafer size are only played in technological process.
The present invention realizes chi by using substrate is used as based on Si process materials, carrying out the wafer-level packaging of acoustic wave device
It is very little small, make simple, it is cheap, and be easily integrated.Meanwhile, it is real by acoustic wave device and substrate connection by way of back-off
Existing acoustic wave device, CMOS tube core and/or SOI tube cores, and radio-frequency power amplifier tube core based on GaAs techniques is heterogeneous is integrated in
In the middle of same encapsulation, CMOS or SOI tube cores low cost, high integration characteristic based on Si, and GaAs techniques are made full use of
High-breakdown-voltage and high electron mobility characteristic, are widely used in radio-frequency power amplifier.
Description of the invention is given for the sake of example and description, and is not exhaustively or by the present invention
It is limited to disclosed form.Many modifications and variations are for the ordinary skill in the art obvious.Select and retouch
State embodiment and be to more preferably illustrate principle of the invention and practical application, and one of ordinary skill in the art is managed
The solution present invention is suitable to the various embodiments with various modifications of special-purpose so as to design.
Claims (27)
1. a kind of acoustic wave device, it is characterised in that including substrate and acoustic wave device, wherein：
The substrate is provided with cavity, and the acoustic wave device is combined with the upper surface of the substrate, so that the cavity turns into close
Closed chamber room；
The lower surface of the substrate is provided with the pin pad of acoustic wave device, pin pad and the acoustic wave device of the acoustic wave device
The pin pad connection of part.
2. acoustic wave device according to claim 1, it is characterised in that
The pin pad of the acoustic wave device is connected by electroplating metal routing with the pin pad of the acoustic wave device.
3. acoustic wave device according to claim 2, it is characterised in that
The material of the plating metal routing is gold, silver, copper, iron, aluminium, nickel, palladium or tin.
4. acoustic wave device according to claim 2, it is characterised in that
The plating metal routing extends along the substrate side neighbouring with the pin pad of the acoustic wave device.
5. acoustic wave device according to claim 4, it is characterised in that
The substrate side and the angle of the lower surface of the substrate are obtuse angle.
6. acoustic wave device according to claim 5, it is characterised in that
The lower surface of the substrate is identical with the angle of two neighboring substrate side.
7. acoustic wave device according to claim 1, it is characterised in that
The pin pad of the acoustic wave device is aluminium projection, copper projection or tin ball.
8. acoustic wave device according to claim 1, it is characterised in that
The acoustic wave device is combined by adhesive means with the upper surface of the substrate.
9. acoustic wave device according to claim 1, it is characterised in that
The pin pad and the substrate of the acoustic wave device are located on the same surface of the acoustic wave device.
10. acoustic wave device according to claim 1, it is characterised in that
Depth of the height of the substrate more than the cavity.
11. acoustic wave devices according to claim 1, it is characterised in that
The acoustic wave device includes surface acoustic wave SAW filter, bulk acoustic wave BAW wave filters or film bulk acoustic FBAR wave filters,
Or including surface acoustic wave SAW duplexers, bulk acoustic wave BAW duplexers or film bulk acoustic FBAR duplexers, or including using
The device of SAW, BAW or FBAR technology manufacture.
12. acoustic wave device according to any one of claim 1-11, it is characterised in that also including substrate, wherein：
The substrate is set on the substrate.
13. acoustic wave devices according to claim 12, it is characterised in that also including set on the substrate with it is described
The heterogeneous electronic device of acoustic wave device, wherein：
The pin pad pin pad connection corresponding with the acoustic wave device of electronic device.
14. acoustic wave devices according to claim 13, it is characterised in that
The pin pad of electronic device is especially by substrate metal cabling, pin pad connection corresponding with the acoustic wave device.
15. acoustic wave devices according to claim 13, it is characterised in that
The electronic device includes the radio-frequency power amplifier based on GaAs HBT techniques, GaAs pHEMT techniques or GaN techniques,
Based on the low-noise amplifier of GaAs pHEMT techniques, based on the switch of GaAs pHEMT techniques, the wave filter based on IPD techniques
At least one of.
16. acoustic wave devices according to claim 13, it is characterised in that
The electronic device includes driving stage circuit, on-off circuit, power supply trace and the envelope-tracking electricity of radio-frequency power amplifier
At least one of road, DC-to-dc change-over circuit, analog to digital conversion circuit, D/A converting circuit.
A kind of 17. wafer-level packaging methods of acoustic wave device, it is characterised in that including：
Cavity is set in substrate；
Acoustic wave device is combined with the upper surface of the substrate, so that the cavity turns into airtight chamber；
The pin pad of the acoustic wave device is connected with the pin pad of the acoustic wave device, wherein the pipe of the acoustic wave device
Pin pad is arranged on the lower surface of the substrate.
18. methods according to claim 17, it is characterised in that
The pin pad of the acoustic wave device is connected with the pin pad of the acoustic wave device by electroplating metal routing.
19. methods according to claim 18, it is characterised in that
The plating metal routing extends along the substrate side neighbouring with the pin pad of the acoustic wave device.
20. methods according to claim 19, it is characterised in that
The substrate side and the angle of the lower surface of the substrate are obtuse angle.
21. methods according to claim 20, it is characterised in that
The lower surface of the substrate is identical with the angle of two neighboring substrate side.
22. methods according to claim 17, it is characterised in that
The acoustic wave device is combined with the upper surface of the substrate by adhesive means.
23. methods according to claim 17, it is characterised in that
The pin pad and the substrate of the acoustic wave device are arranged on the same surface of the acoustic wave device.
24. methods according to claim 17, it is characterised in that
Depth of the height of the substrate more than the cavity.
25. method according to any one of claim 17-24, it is characterised in that also include：
The substrate is arranged on substrate.
26. methods according to claim 25, it is characterised in that also include：
The electronic device heterogeneous with the acoustic wave device is set on the substrate, wherein the pin pad of electronic device and institute
State the corresponding pin pad connection of acoustic wave device.
27. methods according to claim 26, it is characterised in that
By substrate metal cabling, by the pin pad connection corresponding with the acoustic wave device of the pin pad of electronic device.
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