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CN106783955B - Semiconductor device including an insertion layer of aluminum gallium nitride and indium gallium nitride and method of manufacturing the same - Google Patents

Semiconductor device including an insertion layer of aluminum gallium nitride and indium gallium nitride and method of manufacturing the same Download PDF

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CN106783955B
CN106783955B CN201611217388.6A CN201611217388A CN106783955B CN 106783955 B CN106783955 B CN 106783955B CN 201611217388 A CN201611217388 A CN 201611217388A CN 106783955 B CN106783955 B CN 106783955B
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layer
nitride
aluminum
gallium
iii
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CN106783955A (en
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金荣善
李东键
骆薇薇
孙在亨
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Innoscience Zhuhai Technology Co Ltd
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Innoscience Zhuhai Technology Co Ltd
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
    • H01L29/0684—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by the shape, relative sizes or dispositions of the semiconductor regions or junctions between the regions
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02436—Intermediate layers between substrates and deposited layers
    • H01L21/02439—Materials
    • H01L21/02455—Group 13/15 materials
    • H01L21/02458—Nitrides
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/02521—Materials
    • H01L21/02538—Group 13/15 materials
    • H01L21/0254—Nitrides
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/12—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
    • H01L29/20—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only AIIIBV compounds
    • H01L29/2003—Nitride compounds
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/005—Processes
    • H01L33/0062—Processes for devices with an active region comprising only III-V compounds
    • H01L33/0075—Processes for devices with an active region comprising only III-V compounds comprising nitride compounds
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
    • H01L33/26—Materials of the light emitting region
    • H01L33/30—Materials of the light emitting region containing only elements of Group III and Group V of the Periodic Table
    • H01L33/32—Materials of the light emitting region containing only elements of Group III and Group V of the Periodic Table containing nitrogen

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  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Computer Hardware Design (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Ceramic Engineering (AREA)
  • Recrystallisation Techniques (AREA)

Abstract

The present invention relates to a semiconductor device including an insertion layer of aluminum gallium nitride and indium gallium nitride and a method for manufacturing the same. The semiconductor device comprises a substrate, a seed layer arranged on the upper part of the substrate, a buffer layer arranged on the upper part of the seed layer, a III-nitride epitaxial layer arranged on the upper part of the buffer layer and an insertion layer arranged in the middle of the III-nitride epitaxial layer, wherein the insertion layer comprises a nitrogen gallium aluminum layer and/or a nitrogen gallium indium layer. According to the invention, the insertion layer is arranged to compensate a part of tensile stress in the III-nitride epitaxial layer, so that dislocation and tensile stress of the III-nitride epitaxial layer are effectively reduced, and a high-quality III-nitride epitaxial layer can be obtained.

Description

Semiconductor device including an insertion layer of aluminum gallium nitride and indium gallium nitride and method of manufacturing the same
Technical Field
The invention relates to the field of semiconductor devices, in particular to a semiconductor device containing an insertion layer of aluminum gallium nitride and indium gallium nitride and a manufacturing method thereof.
Background
Group iii nitride semiconductor materials are known as third generation semiconductor materials, including gallium nitride (GaN), aluminum nitride (AlN), indium nitride (InN), and tri-and quaternary alloys formed therebetween, such as aluminum gallium nitride (AlGaN), indium aluminum nitride (InAlN), and indium gallium nitride (InGaN). Gallium nitride (GaN) -based group iii nitride semiconductor materials having a wide direct substitution gap (eg=3.36 eV), a high melting point, a high thermal conductivity, a high saturated electron velocity, a high critical breakdown field strength, and a high electron room temperature mobility are widely used in high temperature, high voltage, and high frequency switching devices such as metal semiconductor field effect transistors (MESFETs), high Electron Mobility Transistors (HEMTs), heterojunction Field Effect Transistors (HFETs), light Emitting Diodes (LEDs), and the like.
Since it is currently difficult to obtain a large-sized group iii nitride single crystal material, in order to obtain a high-quality group iii nitride epitaxial layer, heteroepitaxial growth is generally performed on a substrate material such as silicon, sapphire, or silicon carbide. However, as the thickness of the group iii nitride epitaxial layer increases, more dislocation defects and larger internal stress are generated on the group iii nitride thin film, which results in cracking of the group iii nitride epitaxial layer, and seriously affects the performance of the semiconductor device.
Disclosure of Invention
In view of this, it is necessary to provide a semiconductor device including an insertion layer of aluminum gallium nitride and indium gallium nitride and a method for manufacturing the same, in which many dislocation defects and large internal stress are generated in a group iii nitride thin film as the thickness of the group iii nitride epitaxial layer increases.
A semiconductor device comprising an insertion layer of aluminum gallium nitride and indium gallium nitride, comprising:
A substrate;
A seed layer disposed on an upper portion of the substrate;
a buffer layer disposed on an upper portion of the seed layer;
A group III nitride epitaxial layer disposed on an upper portion of the buffer layer;
and an insertion layer disposed in the middle of the group III nitride epitaxial layer, the insertion layer including a gallium aluminum nitride layer and an indium gallium nitride layer.
In one embodiment, the insertion layer includes a single layer of aluminum gallium nitride and a single layer of indium gallium nitride.
In one embodiment, the gallium aluminum nitride layer and/or the gallium indium nitride layer are multi-layered, and the gallium indium nitride layer and the gallium aluminum nitride layer are alternately laminated.
In one embodiment, when the gallium aluminum nitride layers have multiple layers, the doping concentration of aluminum in each of the gallium aluminum nitride layers is different, and the doping concentration of aluminum in the gallium aluminum nitride layers is less than or equal to 1.
In one embodiment, the group iii nitride epitaxial layer is provided with a plurality of the intervening layers.
In one embodiment, the substrate is a sapphire substrate, a silicon substrate, or a silicon carbide substrate.
In one embodiment, the seed layer is an aluminum nitride layer and/or an aluminum gallium nitride layer.
In one embodiment, the buffer layer is an aluminum nitride layer and/or an aluminum gallium nitride layer.
In one embodiment, the group iii nitride epitaxial layer includes at least one of a gallium nitride epitaxial layer and an aluminum gallium nitride epitaxial layer, and the group iii nitride epitaxial layer has a heterostructure formed by the gallium nitride epitaxial layer and the aluminum gallium nitride epitaxial layer.
According to the semiconductor device, the insert layer formed by inserting the gallium aluminum nitride layer and the gallium indium nitride layer is inserted in the middle of the III-group nitride epitaxial layer, and the lattice mismatch and the thermal mismatch between the III-group nitride epitaxial layer and the substrate are effectively relieved by changing the aluminum doping concentration to adjust the structure of the gallium aluminum nitride layer in the insert layer; and the compressive stress in the insertion layer can compensate a part of tensile stress in the III-nitride epitaxial layer, so that dislocation and tensile stress of the III-nitride epitaxial layer are effectively reduced. Therefore, a high quality group iii nitride epitaxial layer can be obtained by providing an insertion layer containing aluminum gallium nitride and indium gallium nitride.
Further, there is a need for a method of fabricating a semiconductor device that includes an insertion layer of aluminum gallium nitride and indium gallium nitride.
A method for manufacturing a semiconductor device including an insertion layer of gallium aluminum nitride and gallium indium nitride, the method comprising the steps of:
1) Forming a seed layer on a substrate;
2) Forming a buffer layer on the seed crystal layer;
3) Forming a group iii nitride epitaxial layer on the buffer layer;
4) Forming an insertion layer on the surface of the group iii nitride layer grown in advance, and then continuing to grow the group iii nitride on the insertion layer to form the group iii nitride epitaxial layer with the group iii nitride layer grown in advance, wherein the insertion layer comprises an aluminum gallium nitride layer and an indium gallium nitride layer.
The semiconductor device with the insert layer containing the gallium aluminum nitride and the gallium indium nitride manufactured by the method has higher high critical breakdown electric field strength and high electron room temperature mobility, and the working performance of the semiconductor device is better.
Drawings
Fig. 1 is a schematic structural diagram of a semiconductor device including an interposer of aluminum gallium nitride and indium gallium nitride according to an embodiment;
fig. 2 is a schematic structural diagram of an interposer of a semiconductor device including an interposer of aluminum gallium nitride and indium gallium nitride according to an embodiment.
Detailed Description
In order to facilitate an understanding of the present invention, a semiconductor device including a silicon-doped aluminum nitride layer and a method of manufacturing the same of the present invention will be more fully described with reference to the accompanying drawings. Preferred embodiments of the present invention are shown in the drawings. This invention may, however, be embodied in many different forms and should not be construed as limited to the embodiments set forth herein. Rather, these embodiments are provided so that this disclosure will be thorough and complete.
Unless defined otherwise, all technical and scientific terms used herein have the same meaning as commonly understood by one of ordinary skill in the art to which this invention belongs. The terminology used herein in the description of the invention is for the purpose of describing particular embodiments only and is not intended to be limiting of the invention. The term "and/or" as used herein includes any and all combinations of one or more of the associated listed items.
As shown in fig. 1, the semiconductor device of an embodiment includes a substrate 101, a seed layer 102, a buffer layer 103, a first group iii nitride epitaxial layer 104, an interposer 105, and a second group iii nitride epitaxial layer 106.
In this embodiment, the material of the substrate 101 is selected in consideration of not only the lattice mismatch degree and the thermal expansion coefficient of the material, but also the size and price of the material. In this embodiment, silicon is used as a material of the substrate 101. It will be appreciated that in other embodiments, the material of the substrate 101 may also be sapphire or silicon carbide, etc.
The seed layer 102 is located on the upper surface of the substrate 101, and mainly serves to form nucleation sites on the surface of the substrate, which is beneficial to nucleation and growth of group iii nitride on the substrate. In this embodiment, the material of the seed layer 102 is aluminum nitride. The seed layer 102 is constructed from one or more aluminum nitride layers. Preferably, the thickness of the seed layer 102 is 500nm or less. It will be appreciated that in other embodiments, the material of the seed layer 102 is aluminum gallium nitride, silicon nitride, other group iii nitrides, or combinations thereof. The seed layer 102 has one or more layers including an aluminum nitride layer, a gallium nitride layer, a silicon nitride layer, and other group iii nitride layers.
The buffer layer 103 is located on the upper portion of the seed layer 102, and has the main effects of effectively relieving lattice mismatch and thermal mismatch between the group iii nitride epitaxial layer and the substrate, reducing strain of the group iii nitride epitaxial layer caused by stress, and reducing occurrence of dislocation and defect. In this embodiment, the material of the buffer layer 103 is aluminum gallium nitride. Buffer layer 103 is constructed from one or more aluminum gallium nitride layers. Preferably, the thickness of the buffer layer 103 is 5um or less. It is understood that in other embodiments, the material of the buffer layer 103 is aluminum nitride, gallium nitride, silicon nitride, or other group iii nitrides, or combinations thereof. The buffer layer 103 has one or more layers including other group iii nitride layers such as an aluminum nitride layer, a gallium nitride layer, and a silicon nitride layer.
The group iii nitride epitaxial layer is composed of a first group iii nitride epitaxial layer 104 and a second group iii nitride epitaxial layer 106. A first group iii nitride epitaxial layer 104 is located on top of the buffer layer 103, and a second group iii nitride epitaxial layer 106 is located on top of the first group iii nitride epitaxial layer 104. In the present embodiment, the material of the first group iii nitride epitaxial layer 104 is gallium nitride, and the material of the second group iii nitride epitaxial layer 106 is aluminum gallium nitride.
A gallium nitride aluminum/gallium nitride heterostructure is formed between the gallium nitride epitaxial layer and the gallium nitride aluminum epitaxial layer, and is a core component of the semiconductor device. Triangle potential wells are formed at the interface of the nitrogen gallium aluminum/gallium nitride heterostructure, the Debroil wavelength of electrons is larger than the width of the potential wells, energy in the direction vertical to the surface is quantized to form sub-energy bands, the freedom degree of the electrons in the direction vertical to the surface is lost, only the freedom degrees in the two directions along the surface exist, and electrons with very high migration speed in the potential wells are two-dimensional electron gas (2 DEG).
It will be appreciated that in other embodiments, the material of the first group iii nitride epitaxial layer 104 is another group iii nitride such as aluminum nitride or indium gallium nitride, and the material of the second group iii nitride epitaxial layer 106 is another group iii nitride such as gallium nitride or indium nitride. The group iii nitride epitaxial layer is a multilayer structure including the first group iii nitride epitaxial layer 104 and the second group iii nitride epitaxial layer 106, such as a two-layer structure including the first group iii nitride epitaxial layer 104 and the second group iii nitride epitaxial layer 106, a three-layer structure including the two first group iii nitride epitaxial layers 104 and the one second group iii nitride epitaxial layer 106, a three-layer structure including the first group iii nitride epitaxial layer 104 and the two second group iii nitride epitaxial layers 106, a four-layer structure including the two first group iii nitride epitaxial layers 104 and the two second group iii nitride epitaxial layers 106, and the group iii nitride epitaxial layer has at least one hetero-structure.
The insert layer 105 is located in the middle of the group iii nitride epitaxial layer, and has the main function of enabling the epitaxial layer to be in a compressive strain state, reducing stress and dislocation in the epitaxial layer, and further eliminating cracks in the epitaxial layer, so that a high-quality crack-free group iii nitride epitaxial layer is obtained. In this embodiment, the insertion layer 105 is located in the middle of the first group iii nitride epitaxial layer 104, and the material of the insertion layer 105 is gallium indium nitride and gallium aluminum nitride, where the aluminum nitride material may change the aluminum doping concentration (mass fraction of aluminum relative to the aluminum nitride layer) according to the epitaxial layer growth requirement. Preferably, the thickness of the insertion layer 105 is 100nm or less.
As shown in fig. 2, the interposer 105 has a superlattice layer structure formed by alternately stacking gallium aluminum nitride layers 111 and gallium indium nitride layers 112 in this order. Wherein the doping concentration of aluminum in the second layer of aluminum gallium nitride layer 111 in the interposer layer 105 is increased by 15% relative to the doping concentration of aluminum in the first layer of aluminum gallium nitride layer 111, the doping concentration of aluminum in the third layer of aluminum gallium nitride layer 111 is increased by 35% relative to the doping concentration of aluminum in the first layer of aluminum gallium nitride layer 111, and the doping concentration of aluminum in the third layer of aluminum gallium nitride layer 111 is increased by 60% relative to the doping concentration of aluminum in the first layer of aluminum gallium nitride layer 111. The doping concentration of aluminum in each of the gallium aluminum nitride layers 111 in the interposer 105 may be non-constant, and the doping concentration of aluminum in each of the gallium aluminum nitride layers 111 may be adjusted according to the growth requirements of the group iii nitride epitaxial layers, and may be irregularly changed. Preferably, the doping concentration of aluminum in the gallium aluminum nitride layer 111 is 1 or less.
It will be appreciated that in other embodiments, the interposer 105 may be a superlattice layer structure formed by alternately stacking the gallium nitride aluminum layers 111 and the gallium nitride indium layers 112, such as a two-layer structure formed by a single gallium nitride aluminum layer 111 and a single gallium nitride indium layer 112, a three-layer structure formed by a single gallium nitride aluminum layer 111 and a single gallium nitride indium layer 112, a four-layer structure formed by a single gallium nitride aluminum layer 111 and a single gallium nitride indium layer 112, a five-layer structure formed by a three-layer gallium nitride aluminum layer 111 and a single gallium nitride indium layer 112, or the like. The doping concentration of aluminum in each of the gallium aluminum nitride layers 111 in the interposer 105 may or may not be fixed. The doping concentration of aluminum in each gallium nitride aluminum layer 111 can be adjusted according to the growth requirement of the group iii nitride epitaxial layer, and can be changed regularly or irregularly. Preferably, the doping concentration of aluminum in the gallium aluminum nitride layer 111 is 1 or less.
Preferably, a plurality of insertion layers 105 including a gallium aluminum nitride layer 111 and an indium gallium nitride layer 112 are present in the first group iii nitride epitaxial layer 104 and the first group iii nitride epitaxial layer 106.
In addition, the embodiment also provides a manufacturing method of the semiconductor device containing the silicon-doped aluminum nitride layer, which specifically comprises the following steps:
Step one: a seed layer 102 comprising silicon doped aluminum nitride is deposited on the provided substrate 101.
In this embodiment, the seed layer 102 is formed by vapor phase epitaxy (MOCDV) by injecting trimethylaluminum in an NH3 atmosphere at 1000 degrees or higher.
The step of removing the native oxide layer of the substrate 101 with wet or dry etching is also included before forming the seed layer 102.
Step two: a buffer layer 103 is formed on the seed layer 102.
Step three: nucleation sites are formed on buffer layer 103 to promote island growth and island union of the group iii nitride, and first group iii nitride epitaxial layer 104 is formed gradually.
Step four: an insertion layer 105 is formed on the surface of the previously grown group iii nitride layer, and then group iii nitride continues to be grown on the insertion layer 105 to form a first group iii nitride epitaxial layer 104 with the previously grown group iii nitride layer. Forming the insertion layer 105 in the first group iii nitride epitaxial layer 104 can reduce internal stress and dislocation generated as the layer thickness of the group iii nitride layer increases.
Step five: a second group iii nitride epitaxial layer 106 is formed on the first group iii nitride epitaxial layer 104, completing the growth of the group iii nitride epitaxial layer.
The technical features of the above-described embodiments may be arbitrarily combined, and all possible combinations of the technical features in the above-described embodiments are not described for brevity of description, however, as long as there is no contradiction between the combinations of the technical features, they should be considered as the scope of the description.
The above examples illustrate only a few embodiments of the invention, which are described in detail and are not to be construed as limiting the scope of the invention. It should be noted that it will be apparent to those skilled in the art that several variations and modifications can be made without departing from the spirit of the invention, which are all within the scope of the invention. Accordingly, the scope of protection of the present invention is to be determined by the appended claims.

Claims (9)

1. A semiconductor device comprising an insertion layer of aluminum gallium nitride and indium gallium nitride, comprising:
A substrate;
A seed layer disposed on an upper portion of the substrate;
a buffer layer disposed on an upper portion of the seed layer;
a group III nitride epitaxial layer disposed on an upper portion of the buffer layer; and
The inserting layer is arranged in the middle of the III-nitride epitaxial layer and comprises a gallium aluminum nitride layer and a gallium indium nitride layer; the gallium aluminum nitride layer is four layers, the gallium indium nitride layer is three layers, and the gallium indium nitride layer and the gallium aluminum nitride layer are mutually adjacent and alternately laminated and grown in sequence to form a superlattice layer structure; the doping concentration of aluminum in each of the gallium aluminum nitride layers is different, wherein the doping concentration of aluminum in the second gallium aluminum nitride layer is increased by 15% relative to the doping concentration of aluminum in the first gallium aluminum nitride layer, the doping concentration of aluminum in the third gallium aluminum nitride layer is increased by 35% relative to the doping concentration of aluminum in the first gallium aluminum nitride layer, and the doping concentration of aluminum in the gallium aluminum nitride layer is less than or equal to 1;
The III-nitride epitaxial layer is composed of a first III-nitride epitaxial layer and a second III-nitride epitaxial layer, the first III-nitride epitaxial layer is made of gallium nitride, the second III-nitride epitaxial layer is made of aluminum gallium nitride, and the insertion layer is located in the middle of the first III-nitride epitaxial layer.
2. The semiconductor device according to claim 1, wherein the group iii nitride epitaxial layer is provided with a plurality of the insertion layers.
3. The semiconductor device according to claim 1, wherein the substrate is a sapphire substrate, a silicon substrate, or a silicon carbide substrate.
4. The semiconductor device according to claim 1, wherein the seed layer is an aluminum nitride layer and/or an aluminum gallium nitride layer.
5. The semiconductor device according to claim 1, wherein the buffer layer is an aluminum nitride layer and/or an aluminum gallium nitride layer.
6. The semiconductor device according to claim 1, wherein a thickness of the seed layer is 500nm or less.
7. The semiconductor device according to claim 1, wherein a thickness of the buffer layer is 5 μm or less.
8. The semiconductor device according to claim 1, wherein a thickness of the insertion layer is 100nm or less.
9. A method for manufacturing a semiconductor device including an insertion layer of gallium aluminum nitride and gallium indium nitride, the method comprising the steps of:
1) Depositing a seed layer containing silicon-doped aluminum nitride on a substrate;
2) Forming a buffer layer on the seed crystal layer;
3) Forming a nuclear point on the buffer layer, promoting island growth and island union of III-group nitride, and gradually forming a first III-group nitride epitaxial layer;
4) Forming an insertion layer on the surface of the pre-grown III-nitride layer, and then continuing to grow the III-nitride on the insertion layer to form the first III-nitride epitaxial layer with the pre-grown III-nitride layer, wherein the insertion layer comprises an aluminum gallium nitride layer and an indium gallium nitride layer; the gallium aluminum nitride layer is four layers, the gallium indium nitride layer is three layers, and the gallium indium nitride layer and the gallium aluminum nitride layer are mutually adjacent and alternately laminated and grown in sequence to form a superlattice layer structure; the doping concentration of aluminum in each of the gallium aluminum nitride layers is different, wherein the doping concentration of aluminum in the second gallium aluminum nitride layer is increased by 15% relative to the doping concentration of aluminum in the first gallium aluminum nitride layer, the doping concentration of aluminum in the third gallium aluminum nitride layer is increased by 35% relative to the doping concentration of aluminum in the first gallium aluminum nitride layer, and the doping concentration of aluminum in the gallium aluminum nitride layer is less than or equal to 1;
5) A second group iii nitride epitaxial side is formed on the first group iii nitride epitaxial layer.
CN201611217388.6A 2016-12-26 2016-12-26 Semiconductor device including an insertion layer of aluminum gallium nitride and indium gallium nitride and method of manufacturing the same Active CN106783955B (en)

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CN103531612A (en) * 2012-07-02 2014-01-22 三星电子株式会社 Semiconductor device
CN104009077A (en) * 2014-06-04 2014-08-27 苏州能讯高能半导体有限公司 Heterojunction structure, preparing method thereof, heterojunction field-effect tube and preparing method thereof
CN206516633U (en) * 2016-12-26 2017-09-22 英诺赛科（珠海）科技有限公司 The semiconductor devices of insert layer containing nitrogen gallium aluminium and nitrogen gallium indium

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