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CN106787733B - Boost conversion circuit - Google Patents

Boost conversion circuit Download PDF

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Publication number
CN106787733B
CN106787733B CN201710086314.1A CN201710086314A CN106787733B CN 106787733 B CN106787733 B CN 106787733B CN 201710086314 A CN201710086314 A CN 201710086314A CN 106787733 B CN106787733 B CN 106787733B
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circuit
boost
stage
voltage
source
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CN106787733A (en
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田学农
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Suzhou University of Science and Technology
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Suzhou University of Science and Technology
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    • H—ELECTRICITY
    • H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
    • H02M—APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
    • H02M3/00—Conversion of dc power input into dc power output
    • H02M3/02—Conversion of dc power input into dc power output without intermediate conversion into ac
    • H02M3/04—Conversion of dc power input into dc power output without intermediate conversion into ac by static converters
    • H02M3/10—Conversion of dc power input into dc power output without intermediate conversion into ac by static converters using discharge tubes with control electrode or semiconductor devices with control electrode
    • H02M3/145—Conversion of dc power input into dc power output without intermediate conversion into ac by static converters using discharge tubes with control electrode or semiconductor devices with control electrode using devices of a triode or transistor type requiring continuous application of a control signal
    • H02M3/155—Conversion of dc power input into dc power output without intermediate conversion into ac by static converters using discharge tubes with control electrode or semiconductor devices with control electrode using devices of a triode or transistor type requiring continuous application of a control signal using semiconductor devices only
    • H02M3/156—Conversion of dc power input into dc power output without intermediate conversion into ac by static converters using discharge tubes with control electrode or semiconductor devices with control electrode using devices of a triode or transistor type requiring continuous application of a control signal using semiconductor devices only with automatic control of output voltage or current, e.g. switching regulators
    • H02M3/158—Conversion of dc power input into dc power output without intermediate conversion into ac by static converters using discharge tubes with control electrode or semiconductor devices with control electrode using devices of a triode or transistor type requiring continuous application of a control signal using semiconductor devices only with automatic control of output voltage or current, e.g. switching regulators including plural semiconductor devices as final control devices for a single load
    • H—ELECTRICITY
    • H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
    • H02M—APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
    • H02M1/00—Details of apparatus for conversion
    • H02M1/0067—Converter structures employing plural converter units, other than for parallel operation of the units on a single load
    • H02M1/0074—Plural converter units whose inputs are connected in series
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02B—CLIMATE CHANGE MITIGATION TECHNOLOGIES RELATED TO BUILDINGS, e.g. HOUSING, HOUSE APPLIANCES OR RELATED END-USER APPLICATIONS
    • Y02B70/00—Technologies for an efficient end-user side electric power management and consumption
    • Y02B70/10—Technologies improving the efficiency by using switched-mode power supplies [SMPS], i.e. efficient power electronics conversion e.g. power factor correction or reduction of losses in power supplies or efficient standby modes

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  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Dc-Dc Converters (AREA)

Abstract

The method and the circuit for realizing the direct-current boost conversion with the high boost conversion ratio through the two-stage conversion are provided, a switch branch of a first-stage boost circuit is formed by cascading two MOS transistors, and an off signal is generated by comparing an output voltage with a preset bias voltage so as to control the on-off of the switch branch; when the circuit is started, the first-stage booster circuit works, the first-stage circuit is disconnected under the action of a turn-off signal after the output voltage is increased, and meanwhile, the second booster circuit starts to provide stable high output voltage.

Description

Boost conversion circuit
Technical Field
The present invention relates to a dc-dc voltage conversion circuit.
Background
As shown in FIG. 1, the switch T is turned on or off periodically, assuming the switch period is T S In which the switch is on-time t on For DT S Switch off time t off Is (1-D) T S Here 0<D<1. The output voltage of the switch is then,
Figure GDA0004102854980000011
the desired output voltage can be obtained by adjusting the duty cycle D.
When the switching signal or the input voltage is relatively low, a low-threshold MOS transistor is required to be used as a switching device, but the low-threshold MOS transistor has low withstand voltage due to the fact that the thickness of a gate oxide layer is relatively small compared with the doping concentration of a substrate, so that high output voltage and high boost transformation ratio cannot be obtained. In order to obtain high output voltage, a switching MOS tube with high withstand voltage is needed, but the thickness of a gate oxide layer and the doping concentration of a substrate of the device are large, the threshold voltage is increased, and the starting of a circuit at low input voltage is difficult.
The invention provides a novel two-stage direct current boost conversion circuit which can obtain high output voltage and voltage transformation ratio under the condition of low input voltage.
Disclosure of Invention
The boost circuit is a common direct-current voltage conversion circuit, but when the output voltage or the boost voltage is higher, a switching tube is required to have larger tolerance voltage, and the device structure and doping concentration required by the larger tolerance voltage can cause high threshold voltage, so that the starting of the circuit is difficult.
The invention provides a direct current boost conversion method with high boost transformation ratio.A switch branch of a first stage boost circuit is composed of a low threshold MOS transistor, meanwhile, the work of a switch branch is controlled by a turn-off signal, when the output voltage is low, the turn-off signal enables the first stage switch branch to work normally, and when the output voltage is high, the turn-off signal enables the first stage switch branch to turn off; when the output voltage is changed, the current distribution relation of the current in the tail current source of the differential pair in the two differential pairs is changed, so that the load voltage drop of the transistor is changed, the voltage of an off signal output by the drain electrode of the transistor is changed, and the on-off state of a first-stage switch branch is changed; the switch branch of the second-stage boost circuit is composed of a high threshold voltage MOS transistor with high withstand voltage, a control signal of the switch branch of the second-stage boost circuit is generated by a level shift circuit, a switch control pulse is connected to the input end of the level shift circuit, the output end of the level shift circuit is connected to the control grid electrode of the second-stage switch tube, and when the output voltage is increased under the action of the first-stage boost circuit, the output voltage of the level shift circuit is increased, so that the on-off state of the high threshold voltage switch MOS tube of the second-stage switch branch can be controlled.
The invention provides a high boost ratio direct current boost conversion circuit, which comprises a first stage boost circuit 110, a second stage boost circuit 130, a level shift circuit 120 and a turn-off signal generating circuit 140.
First-stage boost circuit in the high-boost-ratio direct-current boost conversion circuit, and inductor L 1 One side is connected with the input voltage, and the other side is connected with the switch branch and the diode D 1 Is connected with the positive electrode of the battery; switch branch routes two transistors M 8 And M is as follows 9 Cascode arrangement, wherein a transistor M 9 The gate of (1) is connected with a switch control pulse signal, and a transistor M 9 Drain of (d) and transistor M 8 Source connection of transistor M 8 Gate of (a) and turn-off signal V output by turn-off circuit 140 sw1 Connected to transistor M 8 Drain electrode of (d) and inductance L 1 And diode D 1 Is connected with the public end of the box body; diode D 1 Negative electrode of (C) and output capacitance C 1 And resistance R L Is connected with one common terminal of the output capacitor C 1 And resistance R L In parallel, the other common ground.
The turn-off circuit in the high boost ratio DC boost converter circuit comprises a transistor M 4 And M is as follows 5 Difference in compositionSplit into pairs, M 4 And M is as follows 5 Source of (d) and transistor M 6 Drain electrode connection of M 6 Is a tail current source; transistor M 2 And M is as follows 3 Is short-circuited with the gate and the drain of M 2 And M is as follows 3 The drain electrode of (2) is connected with the input voltage V in ，M 4 The gate electrode of (2) is connected with the output voltage V out ，M 7 Is grounded at the source of M 7 Drain and load resistance R of (2) 2 Connection, M 2 Source electrode of (C) and M 7 Load resistance R of (2) 2 The voltage of the connected common terminal is the turn-off signal V SW1 ，M 5 The gate voltages of M6 and M7 are respectively connected with the bias voltage V B1 、V B3 、V B2 。
The second stage boost circuit of the high boost-to-transformation-ratio direct-current boost conversion circuit comprises an inductor L 2 Switching MOS transistor M 10 Diode D 2 Capacitance C 2 Inductance L 3 The method comprises the steps of carrying out a first treatment on the surface of the Inductance L 2 One side is connected with the input voltage, and the other side is connected with the switch MOS transistor M 10 Drain electrode connection of transistor M 10 M in gate and 120 circuit 1 Drain electrode connection of M 10 The source electrode of the transistor is grounded; diode D 2 Positive electrode of (c) and M 10 Drain electrode connection, diode D 2 Negative electrode of (C) and capacitor C 2 Connection, inductance L 3 One side and a capacitor C 2 Connected with the other side connected with a load resistor R L 。
The high boost ratio DC boost converter circuit comprises a MOS transistor M 1 And resistance R 1 Wherein M is 1 The grid of the resistor R is connected with a switch pulse signal 1 One side is connected with M 1 Drain electrode connection of resistor R 1 The other side of the voltage boosting circuit is connected with the output end of the voltage boosting circuit.
Drawings
FIG. 1 is a schematic diagram of a boost circuit
FIG. 2 is a circuit diagram of a two-stage boost converter
Detailed Description
Fig. 2 is a diagram of a boost circuit with a high boost ratio according to the present invention. Wherein the method comprises the steps of
(1) 110 circuit isFirst stage boost conversion circuit including M 8 ,M 9 ,L 1 ,D 1 ,C 1 ,R L Wherein M is 8 ,M 9 Is a low threshold MOS device.
(2) 120 circuits are level shifting circuits, including M 1 ,R 1 ，M 1 Is a low threshold MOS device.
(3) 140 circuits are off circuits, including M 2 、M 3 、M 4 、M 5 、M 6 、M 7 ，R 2 。
(4) 130 is a second stage boost converter circuit comprising L 2 ,D 2 ,L 3 ,C 2 ,M 10 ,R L ，M 10 Is a high threshold voltage device.
140M in circuit 4 、M 5 Is a differential pair circuit, M 6 M is the tail current source of the differential pair 2 And M is as follows 3 MOS tube short-circuited by grid drain is used as active load, M 7 And R is R 2 Is an output circuit. M is M 2 And M is as follows 3 The drain electrode of (2) is connected with the input voltage V in ，M 4 The grid electrode of the (C) is connected with the output voltage V of the boost conversion circuit out ，M 5 、M 6 、M 7 The gate voltages of (2) are respectively connected with the bias voltage V B1 、V B3 、V B2 ，M 2 The source of (a) is the output turn-off signal V SW1 . When the circuit is started, M 4 The grid electrode is connected with the output V of the first stage booster circuit out At this time, tail current source M 6 The supplied current is M 4 And M 5 Dispensing, the ratio of dispensing being defined by V out And V B1 When M is determined by the size of 4 The side current is smaller, M 2 The drain-source voltage drop of (2) is also smaller, and the output turn-off signal V SW1 Can ensure the first-stage switch cascade tube M 8 Is conducted by the electric motor; when outputting voltage V out Elevation, M 4 Side current increases, M 2 The drain-source voltage drop of (2) increases with it, turning off the signal V SW1 The reduction is performed until the first stage switching cascade is turned off. This achieves the turning off of the first stage booster circuit when the output voltage increases.
When most at the maximumInitial output voltage V out When not high, M 1 The drain voltage is relatively low, M 10 The step-up circuit of the 2 nd stage cannot work because the step-up circuit cannot be started; v (V) out Low such that M 4 The drain current is relatively small, such that M 2 The source-drain voltage drop is smaller, M 8 The first-stage boost conversion circuit is connected with the first-stage boost conversion circuit, and the first-stage boost conversion circuit can work normally to realize the boost function; the output voltage being varied by varying the duty cycle of the switching pulses, when the output voltage V out Rise, pass through level shift circuit M 1 The drain potential increases so that the level of the second stage switching pulse output by the M1 drain increases to make M 10 Can be started, the second stage booster circuit starts to work, and V out Elevation causes M 4 Side current increases, M 2 The voltage drop of the drain source is increased, M 8 Reduced gate potential, M 8 Is turned off, so that the first stage switching branch is turned off, and power loss is reduced.
The circuit can make the circuit work by using the first stage circuit when the boosting transformation ratio is not large or the circuit is started, and start the second stage boosting circuit to work to obtain high output voltage after the output voltage is increased, and make the switching signal be increased by using the level shift circuit, so that M of high threshold voltage is ensured 10 Can work normally and stably.

Claims (2)

1. A direct current boost conversion circuit with high boost conversion ratio is characterized in that: the circuit comprises a first-stage booster circuit, a second-stage booster circuit, a turn-off signal generating circuit and a level shifting circuit;
first-stage boost circuit routing inductance L 1 Switch tube M 8 、M 9 Diode D 1 Capacitance C 1 Resistance R L Composition; the second stage boost circuit consists of an inductor L 3 、L 2 Capacitance C 2 Diode D 2 Switch tube M 10 Composition; turn-off signal generating circuit routing transistor M 2 、M 3 、M 4 、M 5 、M 6 、M 7 And resistance R 2 Composition; level shift circuit routing switch tube M 1 And resistance R 1 Composition;
inductance L 1 One end is connected with the input voltage V in Positive terminal, inductance L 2 One end of transistor M 2 、M 3 Is connected with the grid electrode and the drain electrode of the transistor, and the other end is connected with M 8 Drain of (D) and diode D 1 Is connected with the anode of the power supply, and inputs voltage V in The negative end is grounded, M 8 Source electrode of (C) and M 9 Drain electrode connection of M 9 Is grounded at the source of M 9 Gate and M of (2) 1 The gate of (2) receives a switch control pulse input, M 8 Gate connection M of (2) 2 Source, M of (2) 4 Drain of (d) and resistance R 2 Diode D 1 The cathode of (a) is the output end V of the boost conversion circuit out ，D 1 Cathode connection capacitor C of (2) 1 Resistance R L 、R 1 And inductance L 3 Capacitance C 1 Resistance R L The other end of the first electrode is grounded; inductance L 3 The other end is connected with a capacitor C 2 One end and diode D 2 Cathode D 2 Anode connection inductance L 2 Another end and M 10 Drain electrode M 10 Source and capacitor C 2 The other end is grounded, M 10 Grid connection resistor R 1 Another end and M 1 Drain electrode M 1 The source electrode is grounded; m is M 4 、M 5 Source connection M of (2) 6 Drain electrode of M 6 Is grounded at the source of M 3 Source connection M of (2) 5 Drain electrode of M 4 Gate-connected diode D 1 Cathode of resistance R 2 The other end is connected with M 7 Drain electrode of M 7 Source electrode is grounded, M 5 、M 6 、M 7 The grid electrodes of (a) are respectively connected with the bias voltage V B1 、V B3 、V B2 。
2. A direct current boost conversion method with high boost conversion ratio is characterized in that: a high boost ratio dc boost conversion circuit applied to the high boost ratio dc boost conversion circuit as claimed in claim 1, wherein the switching transistor M of the first stage boost circuit 8 、M 9 Is a low threshold voltage MOS transistor, a switch tube M 8 Is controlled by a turn-off signal output from a turn-off signal generating circuitThe turn-off signal enables the first stage boost circuit to work normally when the output voltage of the boost conversion circuit is low, and enables M when the output voltage is high 8 Turning off; switching tube M of second-stage booster circuit 10 In order to withstand the high threshold voltage MOS transistor with high voltage, the control signal of the switch branch of the second stage booster circuit is generated by a level shift circuit, the switch control pulse is connected to the input end of the level shift circuit, and the output end of the level shift circuit is connected to the high threshold voltage MOS transistor M 10 When the output voltage of the boost converter circuit is increased by the first stage boost circuit, the output voltage of the level shift circuit is increased to control the high threshold voltage MOS transistor M 10 Is provided.
CN201710086314.1A 2017-02-17 2017-02-17 Boost conversion circuit Active CN106787733B (en)

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Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN203660880U (en) * 2013-12-30 2014-06-18 东莞市金河田实业有限公司 Two-stage boost topological circuit
CN104838574A (en) * 2012-10-31 2015-08-12 克里公司 Power converter with bias voltage regulation circuit

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* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US9230512B2 (en) * 2013-12-30 2016-01-05 Shenzhen China Star Optoelectronics Technoogy Co., Ltd LED backlight driving circuit and liquid crystal device

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN104838574A (en) * 2012-10-31 2015-08-12 克里公司 Power converter with bias voltage regulation circuit
CN203660880U (en) * 2013-12-30 2014-06-18 东莞市金河田实业有限公司 Two-stage boost topological circuit

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