CN106773431A - Liquid crystal display device structure and preparation method thereof - Google Patents
Liquid crystal display device structure and preparation method thereof Download PDFInfo
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- CN106773431A CN106773431A CN201710214701.9A CN201710214701A CN106773431A CN 106773431 A CN106773431 A CN 106773431A CN 201710214701 A CN201710214701 A CN 201710214701A CN 106773431 A CN106773431 A CN 106773431A
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- light shield
- liquid crystal
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- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
- G02F1/1362—Active matrix addressed cells
- G02F1/136209—Light shielding layers, e.g. black matrix, incorporated in the active matrix substrate, e.g. structurally associated with the switching element
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/1333—Constructional arrangements; Manufacturing methods
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- Physics & Mathematics (AREA)
- Nonlinear Science (AREA)
- Mathematical Physics (AREA)
- Chemical & Material Sciences (AREA)
- Crystallography & Structural Chemistry (AREA)
- General Physics & Mathematics (AREA)
- Optics & Photonics (AREA)
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Liquid Crystal (AREA)
Abstract
The present invention provides a kind of liquid crystal display device structure and preparation method thereof, and the liquid crystal display device structure includes：Substrate；Cushion, is set on the substrate；Light shield layer, including a Si of impurity are doped with, the light shield layer is arranged on the cushion；And active layer, it is arranged on the light shield layer.Liquid crystal display device structure that the present invention is provided and preparation method thereof, treatment is doped to a Si light shield layers, reduce the translucency of light shield layer, and can simultaneously etch light shield layer and active layer, without the characteristic of influence low-temperature polysilicon liquid crystal on silicon displays while mask number of times is reduced, manufacture craft has been saved, production cost has been reduced.
Description
Technical field
The present invention relates to display device technology field, more particularly to a kind of liquid crystal display device structure and preparation method thereof.
Background technology
Low-temperature polysilicon liquid crystal on silicon displays (LTPS LCD) typically uses 9 top-gated techniques of mask (MASK), wherein hiding
Photosphere (LS) is using molybdenum (Mo), and molybdenum is metal, and front metal is unable to theory of evolution vapour deposition due to the risk that there is electric discharge
(CVD) in chamber, can only etch to be formed enter in CVD chamber after pattern, thus using molybdenum as barrier layer cannot with into
Part etches together for the active layer of p-Si.And a-Si then avoids this problem as light shield layer, can be etched together with active layer,
So as to reduce by one mask.But a-Si light transmittances, as light shield layer, reduce the spy of low-temperature polysilicon liquid crystal on silicon displays than larger
Property.So far, not yet having effective method can not influence the spy of low-temperature polysilicon liquid crystal on silicon displays while mask number of times is reduced
Property.
The content of the invention
In view of above mentioned problem of the prior art, it is an object of the invention to provide a kind of liquid crystal display device structure and its system
Make method, the light shield layer light transmittance of a-Si can be significantly reduced, without influence low temperature polycrystalline silicon while mask number of times is reduced
The characteristic of liquid crystal display.
It is that, up to above-mentioned purpose, the present invention uses following technical scheme.
A kind of liquid crystal display device structure, including：Substrate；Cushion, is set on the substrate；Light shield layer, including doping
The a-Si of impurity, the light shield layer is arranged on the cushion；And active layer, it is arranged on the light shield layer.
The liquid crystal display device structure also includes：Doping cushion, be arranged on the light shield layer, the active layer it
Under.
Wherein, the thickness of the light shield layer is 90nm.
Wherein, the thickness of the doping cushion is between 50nm to 150nm；
Wherein, the doping cushion includes silica, silicon nitride or its combination.
Wherein, the impurity is boron or phosphorus.
The present invention also provides a kind of preparation method of liquid crystal display device structure, including：Substrate is provided；Shape on the substrate
Into cushion；Light shield layer is formed on the cushion, the light shield layer includes being doped with the a-Si of impurity；To the light shield layer
It is doped treatment；Active layer is formed on the light shield layer.
Wherein, it is described treatment is doped to the light shield layer to include：Doping cushion is formed on the light shield layer, it
Treatment is doped to the doping cushion and the light shield layer afterwards.
The preparation method of the liquid crystal display device structure, also includes：After the active layer is formed, using one mask
The step of technique one etches the light shield layer and the active layer.
Wherein, the thickness of the doping cushion is between 50nm to 150nm.
Liquid crystal display device structure that the present invention is provided and preparation method thereof, treatment is doped to a-Si light shield layers, is reduced
The translucency of light shield layer, and can simultaneously etch light shield layer and active layer, without influence while mask number of times is reduced
The characteristic of low-temperature polysilicon liquid crystal on silicon displays, has saved manufacture craft, reduces production cost.
Brief description of the drawings
Fig. 1 is the schematic diagram for showing the liquid crystal display device structure according to embodiment one.
Fig. 2 be show to adulterate front and rear light shield layer light transmittance change curve map.
Fig. 3 is the schematic diagram for showing the liquid crystal display device structure according to embodiment two.
Fig. 4 is the process chart for showing the preparation method according to the liquid crystal display device structure for implementing three.
Fig. 5 is the process chart for showing the preparation method according to the liquid crystal display device structure for implementing four.
Specific embodiment
The present invention is described in further detail with reference to the accompanying drawings and examples.It is understood that this place is retouched
The specific embodiment stated is only used for explaining the present invention, rather than limitation of the invention.It also should be noted that, for the ease of
Description, illustrate only part rather than entire infrastructure related to the present invention in accompanying drawing.
Embodiment one
Fig. 1 shows the schematic diagram of the liquid crystal display device structure according to embodiment one.As shown in figure 1, according to the present embodiment
Liquid crystal display device structure includes substrate 101, is arranged on the cushion 102 of substrate 101, and cushion 102 includes in the present embodiment
The SiO of the SiNx of 50nm and the 100nm being arranged on SiNx2, but embodiment not limited to this.According to the liquid crystal of the present embodiment
Show that device structure also includes the light shield layer 103 that is arranged on cushion 102, the light shield layer 103 is made up of a-Si, the a-Si doped with
Boron impurities (B+) or phosphorus (P+), the thickness of the light shield layer 103 is 90nm, but embodiment not limited to this.On the light shield layer 103
Active layer 105 is set, and the thickness of the active layer 105 is 43nm, and the active layer includes p-Si.
In this embodiment, in a-Si light shield layers doped with boron impurities (B+) or phosphorus (P+), enable to the crystalline substance of a-Si
Lattice structure and band structure change, and reduce the light transmittance of a-Si.Fig. 2 is to show to adulterate the light transmittance change of front and rear light shield layer
Curve map.In fig. 2, wherein curve 3 and 4 is the light transmittance of the a-Si films for not carrying out boron (B+) doping, and light transmittance is most
It is high.Curve 1 and 2 be using ion implanting carry out B+ adulterate a-Si film light transmittance (by 450 DEG C of high-temperature process
1.5h, excludes the influence of subsequent handling), it is known that light transmittance after treatment declines 8% or so.Except carrying out boron (B+) doping
Outside the light transmittance of the film for reducing a-Si, impurity phosphorus can equally reduce the light transmittance of the film of a-Si.
According to the liquid crystal display device structure of the present embodiment, light shield layer selects a-Si films, and a-Si films are mixed
Live together reason so that the light transmittance of the film of a-Si is remarkably decreased, disclosure satisfy that requirement of the liquid crystal display to light transmittance, and energy
The a-Si light shield layers and active layer are etched using one mask simultaneously, process costs have been saved.
Embodiment two
Fig. 3 shows the schematic diagram of the liquid crystal display device structure according to embodiment one.As shown in figure 3, according to the present embodiment
Liquid crystal display device structure includes substrate 301, is arranged on the cushion 302 of substrate 301, and cushion 302 includes in the present embodiment
The SiO of the SiNx of 50nm and the 100nm being arranged on SiNx2, but embodiment not limited to this.According to the liquid crystal of the present embodiment
Show that device structure also includes the light shield layer 303 that is arranged on cushion 302, the light shield layer 303 is made up of a-Si, the a-Si doped with
Boron impurities (B+) or phosphorus (P+), the thickness of the light shield layer 303 is 90nm, but embodiment not limited to this.
From unlike embodiment one, in this embodiment, one layer of doping cushion is provided with the light shield layer 303
304, the composition of the doping cushion is silica, and thickness is 50nm to 150nm.It is provided with the doping cushion 304
Active layer 305, the thickness of the active layer 305 is 43nm, and the active layer includes p-Si.
In this embodiment, equally to impurity boron (B in a-Si light shield layers 303+) or phosphorus (P+), enable to a-
The lattice structure and band structure of Si change, and reduce the light transmittance of a-Si.
But doping cushion 304 is set on light shield layer 303 in the present embodiment, and the cushion plays protection shading
The effect of layer 303 so that when being doped to light shield layer 303, it is to avoid the damage to light shield layer 303, and cause what is mixed
Boron impurities (B+) or phosphorus (P+) after by the doping cushion 304 with the state stablized rest on light shield layer 303 it
In, it is to avoid the injury to following cushion and substrate, improve the performance of liquid crystal display.
According to the liquid crystal display device structure of the present embodiment, light shield layer selects a-Si films, and a-Si films are mixed
Live together reason so that the light transmittance of the film of a-Si is remarkably decreased, disclosure satisfy that requirement of the liquid crystal display to light transmittance, and should
A-Si light shield layers can mask be etched simultaneously together with active layer, has saved process costs, in addition in the present embodiment, is being hidden
One layer of doping cushion is set between photosphere and active layer, it is to avoid the ion implanting during doping is to light shield layer and under
The injury of layer cushion and substrate, improves the performance of liquid crystal display.
Embodiment three
The present embodiment shows the method for making the liquid crystal display device structure in embodiment one.Fig. 4 is to show according to implementation three
Liquid crystal display device structure preparation method process chart.
As shown in figure 4, the preparation method of the liquid crystal display device structure according to the present embodiment comprises the following steps.
In step S4-1, there is provided substrate 101；In step 4-2, the cushion 102 for setting on the substrate 101 is formed,
The SiO of the SiNx that cushion 102 the includes 50nm and 100nm being arranged on SiNx2, but embodiment not limited to this.
Then in step S4-3, plasma reinforced chemical vapour deposition (PECVD) side is formed by cushion 102
Method light shield layer 103, the light shield layer 103 is made up of a-Si, and the thickness of the light shield layer 303 is 90nm, but embodiment not limited to this.
Then in step S4-4, using ion implanted impurity boron (B+) or phosphorus (P+) method light shield layer 103 is carried out
Doping treatment, between 5E14 to 9E14ions/cm2, voltage is 30KV to the impurity dose of ion implanting.
Afterwards, in step S4-5, the a-Si of 43nm is deposited using PECVD methods, it is carried out making annealing treatment afterwards
To p-Si active layers 105.
Finally, light shield layer 103 and active layer 105 are etched using one mask process.
In this embodiment, treatment is doped to a-Si light shield layers, doped with boron impurities (B+) or phosphorus (P+), can
So that the lattice structure of a-Si and band structure change, the light transmittance of a-Si is reduced
The preparation method of the liquid crystal display device structure according to the present embodiment, light shield layer selects a-Si films, is depositing a-
Treatment is doped to a-Si films after Si films so that the light transmittance of the film of a-Si is remarkably decreased, and disclosure satisfy that liquid crystal
Requirement of the display to light transmittance, and the a-Si light shield layers and active layer can be etched using one mask simultaneously, save work
Skill cost.
Example IV
The present embodiment shows the method for making the liquid crystal display device structure in embodiment two.Fig. 5 is to show according to implementation four
Liquid crystal display device structure preparation method process chart.
As shown in figure 5, the preparation method of the liquid crystal display device structure according to the present embodiment comprises the following steps.
In step S5-1, there is provided substrate 301；In step 5-2, formation is arranged on the cushion 302 on substrate 301,
The SiO of the SiNx that cushion 302 the includes 50nm and 100nm being arranged on SiNx2, but embodiment not limited to this.
Then in step S5-3, plasma reinforced chemical vapour deposition (PECVD) side is formed by cushion 302
Method light shield layer 303, the light shield layer 303 is made up of a-Si, and the thickness of the light shield layer 303 is 90nm, but embodiment not limited to this.
Then in step S5-4, doping cushion 304, the composition of the doping cushion are formed on light shield layer 303
It is silica, thickness is 50nm to 150nm.
Then in step S5-5, using ion implanted impurity boron (B+) or phosphorus (P+) method to doping cushion 304
Treatment is doped with light shield layer 303, is cushion actually with the cushion 304 that adulterates, the ion of injection is through the doping
Cushion, is doped to light shield layer 303, and between 5E14 to 9E14ions/cm2, voltage is the impurity dose of ion implanting
30KV.Adopt in this way so that when being doped to light shield layer 303, it is to avoid energy during ion implanting is to light shield layer 303
Damage, and cause the boron impurities (B+) that mix or phosphorus (P+) after by the doping cushion 304 to stablize
State is rested among light shield layer 303, it is to avoid the injury to following cushion and substrate, improves the property of liquid crystal display
Energy.
Afterwards, in step S5-6, the a-Si of 43nm is deposited using PECVD methods, it is carried out making annealing treatment afterwards
To p-Si active layers 305.
Finally, in step 5-7, light shield layer 303 and active layer 305 are etched using one mask process.
In this embodiment, treatment is doped to a-Si light shield layers, doped with boron impurities (B+) or phosphorus (P+), can
So that the lattice structure of a-Si and band structure change, the light transmittance of a-Si is reduced, and using the slow of the cushion that adulterates
Punching is acted on, and improves the performance of liquid crystal display.
The preparation method of the liquid crystal display device structure according to the present embodiment, light shield layer selects a-Si films, is depositing a-
Treatment is doped to a-Si films after Si films so that the light transmittance of the film of a-Si is remarkably decreased, and disclosure satisfy that liquid crystal
Requirement of the display to light transmittance, and the a-Si light shield layers and active layer can be etched using one mask simultaneously, save work
Skill cost, in addition in the present embodiment, sets one layer of doping cushion, it is to avoid doping process between light shield layer and active layer
In ion implanting to light shield layer and the injury to lower floor's cushion and substrate, improve the performance of liquid crystal display.
Note, above are only the principle of presently preferred embodiments of the present invention and institute's application technology.Those skilled in the art should
Understand, the invention is not restricted to specific embodiment described here, can carry out for a person skilled in the art various obvious
Change, readjust and substitute without departing from protection scope of the present invention.Therefore, although by above example to the present invention
It is described in further detail, but the present invention is not limited only to above example, is not departing from the situation of present inventive concept
Under, more other Equivalent embodiments can also be included, and the scope of the present invention is determined by appended claim.
Claims (10)
1. a kind of liquid crystal display device structure, including：
Substrate；
Cushion, is set on the substrate；
Light shield layer, including the a-Si of impurity is doped with, the light shield layer is arranged on the cushion；And
Active layer, is arranged on the light shield layer.
2. liquid crystal display device structure as claimed in claim 1, also includes：Doping cushion, is arranged on the light shield layer,
Under the active layer.
3. liquid crystal display device structure as claimed in claim 1, wherein, the thickness of the light shield layer is 90nm.
4. liquid crystal display device structure as claimed in claim 2, wherein, the thickness of the doping cushion is in 50nm to 150nm
Between.
5. liquid crystal display device structure as claimed in claim 2, wherein, the doping cushion include silica, silicon nitride or
Its combination.
6. the liquid crystal display device structure as described in any in claim 1-5, wherein, the impurity is boron or phosphorus.
7. a kind of preparation method of liquid crystal display device structure, including：
Substrate is provided；
Cushion is formed on the substrate；
Light shield layer is formed on the cushion, the light shield layer includes being doped with the a-Si of impurity；
Treatment is doped to the light shield layer；
Active layer is formed on the light shield layer.
8. the preparation method of liquid crystal display device structure as claimed in claim 7, wherein, it is described that the light shield layer is doped
Treatment includes：Doping cushion is formed on the light shield layer, the doping cushion and the light shield layer are mixed afterwards
Live together reason.
9. the preparation method of liquid crystal display device structure as claimed in claim 7 or 8, also includes：
After the active layer is formed, the light shield layer and the active layer are etched using one step of mask process one.
10. the preparation method of liquid crystal display device structure as claimed in claim 7, wherein, the thickness of the doping cushion exists
Between 50nm to 150nm.
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| CN201710214701.9A CN106773431A (en) | 2017-04-01 | 2017-04-01 | Liquid crystal display device structure and preparation method thereof |
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Cited By (2)
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| CN107910378A (en) * | 2017-11-14 | 2018-04-13 | 京东方科技集团股份有限公司 | LTPS thin film transistor (TFT)s, array base palte and preparation method thereof, display device |
| CN109786324A (en) * | 2019-03-15 | 2019-05-21 | 京东方科技集团股份有限公司 | A kind of low temperature polysilicon base plate and preparation method thereof, array substrate |
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Application publication date: 20170531 |