CN106744659B - Research method based on laser controlling nanostructure silicon substrate surface form - Google Patents
Research method based on laser controlling nanostructure silicon substrate surface form Download PDFInfo
- Publication number
- CN106744659B CN106744659B CN201611150104.6A CN201611150104A CN106744659B CN 106744659 B CN106744659 B CN 106744659B CN 201611150104 A CN201611150104 A CN 201611150104A CN 106744659 B CN106744659 B CN 106744659B
- Authority
- CN
- China
- Prior art keywords
- silicon substrate
- substrate surface
- surface form
- nanostructure
- laser
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
- 239000010703 silicon Substances 0.000 title claims abstract description 104
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 title claims abstract description 103
- 229910052710 silicon Inorganic materials 0.000 title claims abstract description 103
- 239000000758 substrate Substances 0.000 title claims abstract description 89
- 239000002086 nanomaterial Substances 0.000 title claims abstract description 35
- 238000000034 method Methods 0.000 title claims abstract description 15
- 238000011160 research Methods 0.000 title claims abstract description 14
- 239000000463 material Substances 0.000 claims abstract description 56
- 239000011810 insulating material Substances 0.000 claims description 15
- 239000004411 aluminium Substances 0.000 claims description 12
- 239000010425 asbestos Substances 0.000 claims description 12
- 229910052895 riebeckite Inorganic materials 0.000 claims description 12
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 11
- 229910052782 aluminium Inorganic materials 0.000 claims description 11
- 238000004140 cleaning Methods 0.000 abstract description 2
- 230000007613 environmental effect Effects 0.000 abstract description 2
- 238000002474 experimental method Methods 0.000 description 7
- 238000010586 diagram Methods 0.000 description 4
- 238000005530 etching Methods 0.000 description 2
- 238000001039 wet etching Methods 0.000 description 2
- 229920000742 Cotton Polymers 0.000 description 1
- 240000007594 Oryza sativa Species 0.000 description 1
- 235000007164 Oryza sativa Nutrition 0.000 description 1
- AZDRQVAHHNSJOQ-UHFFFAOYSA-N alumane Chemical compound [AlH3] AZDRQVAHHNSJOQ-UHFFFAOYSA-N 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 230000003628 erosive effect Effects 0.000 description 1
- 239000012774 insulation material Substances 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 230000004660 morphological change Effects 0.000 description 1
- 238000011017 operating method Methods 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 235000009566 rice Nutrition 0.000 description 1
- 239000002210 silicon-based material Substances 0.000 description 1
- 239000004575 stone Substances 0.000 description 1
Classifications
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
- B81C1/00—Manufacture or treatment of devices or systems in or on a substrate
- B81C1/00436—Shaping materials, i.e. techniques for structuring the substrate or the layers on the substrate
- B81C1/00444—Surface micromachining, i.e. structuring layers on the substrate
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y40/00—Manufacture or treatment of nanostructures
Landscapes
- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Chemical & Material Sciences (AREA)
- Nanotechnology (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Crystallography & Structural Chemistry (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
- Laser Beam Processing (AREA)
Abstract
The invention discloses a kind of research methods based on laser controlling nanostructure silicon substrate surface form：One, the silicon substrate of the material nanostructure of different thermal conductivity is used respectively；Two, the silicon substrate of laser irradiation of nano structure；Three, silicon substrate surface form is observed, and measures the draw ratio of silicon substrate surface protrusion.Four, the changing rule of silicon substrate surface form is summarized.The present invention has following features：First, changing nanostructure silicon substrate surface form by the thermal conductivity of contact material.Second, being irradiated to nanostructure silicon substrate with laser, cleaning, does not generate any pollution at environmental protection.Third, the time changed needed for nanostructure silicon substrate surface form is short, it is efficient.
Description
Technical field
The invention belongs to nanostructure studying technological domains, and in particular to one kind being based on laser controlling nanostructure silicon substrate table
The research method of face form.
Background technology
The silica-base material of nanostructure is the new material to be grown up based on silicon materials, in MEMS (micro-electro-mechanical systems
System) increasingly important role is played in field.With the continuous development of MEMS (MEMS) and perfect, these are miniature
What required silicon substrate surface form also became on device become increasingly complex and diversification.
Have been able to mold silicon substrate surface form on the silica-base material of nanostructure at present, but the technology also less at
It is ripe, it is mainly manifested in and how to go control silicon substrate surface form.For changing the silicon substrate surface form on nanostructure silica-base material,
More common at present is the wet etching technique in the U.S..The technology is by wet etching repeatedly, to realize that control is received
The structure silicon-based configuration of surface of rice.The defect of the technology is that the silicon substrate surface form for etching to come for the first time can influence second of quarter
The configuration of surface of erosion makes the silicon substrate surface form of second of etching be distorted, and such silicon substrate surface form is apparently not very
It is ideal.
Invention content
Based on the problems of the above-mentioned prior art, the present invention will propose a kind of based on laser controlling nanostructure silicon substrate table
The research method of face form.
The present invention adopts the following technical scheme that：
First technical solution：
The research method of laser controlling nanostructure silicon substrate surface form, specifically can be as follows：
Step 1: using the silicon substrate of the material nanostructure of different thermal conductivity respectively；
Step 2: the silicon substrate of laser irradiation of nano structure；
Step 3: silicon substrate surface form can be observed at AFM (atomic force microscope), and it is corresponding to measure silicon substrate surface
The draw ratio of protrusion.
Step 4: summarizing the changing rule of silicon substrate surface form.
Preferably, the material selection of different thermal conductivity：Heat-insulating material, same material, Heat Conduction Material.
Preferably, heat-insulating material selects asbestos, same material to select silicon, Heat Conduction Material aluminium.
Second technical solution：The research method of laser controlling nanostructure silicon substrate surface form, as follows：
Step 1, with the silicon substrate surrounding of the material nanostructure of different thermal conductivity；
Step 2, laser are irradiated the silicon substrate of nanostructure；
Step 3 closes laser, observes the silicon substrate after laser irradiation；For example, the silicon substrate after laser irradiation is placed on
It is observed under AFM (atomic force microscope).
Step 4 measures the configuration of surface of silicon substrate.For example, measuring the silicon after changing by AFM (atomic force microscope)
Primary surface form.
Preferably, the material selection of different thermal conductivity：Heat-insulating material, same material, Heat Conduction Material.
Preferably, heat-insulating material is asbestos, and same material is silicon, and Heat Conduction Material is aluminium.
Preferably, step 1 contacts the left and right face of silicon substrate with heat-insulating material, Heat Conduction Material and heat-insulating material, with thermal insulation
Material, same material, heat-insulating material remove contact silicon substrate front-back.
Preferably, step 2, power P=75mW of laser, laser irradiation time t=10s.
Preferably, pyramid is presented in step 3, silicon substrate surface form.For example, observed at AFM (atomic force microscope),
Pyramid is presented in silicon substrate surface form.
Preferably, step 4, silicon substrate surface maximum dimension D and the ratio of most short diameter W are 0.74, maximum height H=
950nm。
The present invention is based on the research methods of laser controlling nanostructure silicon substrate surface form, compared with prior art, this hair
It is bright that there are following features：
First, changing nanostructure silicon substrate surface form by the thermal conductivity of contact material.
Second, being irradiated to nanostructure silicon substrate with laser, cleaning, does not generate any pollution at environmental protection.
Third, the time changed needed for nanostructure silicon substrate surface form is short, it is efficient.
Description of the drawings
Figure 1A -1C are the simple scale diagrams of silicon substrate surface form under different thermal conductivity material.
Fig. 2 is the relation schematic diagram of the thermal conductivity and silicon substrate surface form draw ratio of contact material.
Fig. 3 is the distribution schematic diagram of silicon substrate surrounding contact different thermal conductivity material.
Fig. 4 is the pyramid silicon substrate surface form schematic diagram after changing.
Specific implementation mode
To enable objects, features and advantages of the present invention more to become apparent, below in conjunction with attached drawing to the present invention's
Specific embodiment elaborates.It should be noted that attached drawing is all made of very simplified form and uses non-precision ratio,
Only to the purpose of convenient, the explicitly stated embodiment of the present invention.It elaborates below to the preferred embodiment of the present invention：
When experiment starts, the right plane of contact silicon substrate is gone with the material of different thermal conductivity first, then uses laser irradiation
Nanostructure silicon substrate 10 seconds, by comparing the contact material of different thermal conductivity, to summarize the variation of silicon substrate surface form
Rule.The experimental program being specifically related to is as follows：
Embodiment 1
The right plane of the structure silicon-based plate of contact nanometer, the thermal conductivity k of asbestos are removed with asbestos (heat-insulating material)1=0W/m-K.
Then the power of laser is transferred to P=75mW, the surface of silica-base material is irradiated 10 seconds.After laser irradiation, by silicon substrate
It is placed under optical amplifier instrument and is observed.Observation the result is that there is one piece of raised silicon substrate surface form in the center of silicon substrate,
Corresponding height H=900nm and maximum dimension D=5.15um is measured, corresponding draw ratio is 0.175, as shown in Figure 1A.
Embodiment 2
The right plane of the structure silicon-based plate of contact nanometer, the thermal conductivity k of silicon are removed with silicon (same material)2=150W/m-K.Weight
Multiple aforesaid operations measure corresponding height H=900nm and maximum dimension D=6.00um, and corresponding draw ratio is 0.150, such as
Shown in Figure 1B.
Embodiment 3
The right plane of the structure silicon-based plate of contact nanometer, the thermal conductivity k of aluminium are removed with aluminium (Heat Conduction Material)3=200W/m-K.Weight
Multiple aforesaid operations measure corresponding height H=900nm and maximum dimension D=6.85um, and corresponding draw ratio is 0.131, such as
Shown in Fig. 1 C.
As can be seen from the above-described embodiment, when the thermal conductivity of contact material is gradually increasing, (thermal conductivity of asbestos is minimum, silicon
Thermal conductivity it is medium, the thermal conductivity highest of aluminium), any variation, maximum dimension D will not occur for the maximum height of silicon substrate surface form
It is increasing.It can be obtained for maximum height H/ maximum dimension Ds according to draw ratio, the draw ratio of silicon substrate surface form is increasingly
It is small.
It is contact silicon substrate by aluminium, silicon, asbestos above, to study the draw ratio of silicon substrate surface form.Pass through
It can be found that the thermal conductivity of contact material is bigger, the maximum dimension D of silicon substrate surface form is bigger for above experiment, corresponding long
Diameter is than smaller.
Experiment can also study the draw ratio of silicon substrate surface form with the material of more different thermal conductivities, not do herein in detail
Thin narration, the relational graph of the contact material thermal conductivity finally drawn and silicon substrate surface form draw ratio are as shown in Figure 2.
The change of silicon substrate surface form may be implemented using above-mentioned experiment law.Specific experimental implementation is as follows：
This experiment still removes the silicon substrate under contact laser irradiation with the material of three kinds of asbestos, silicon, aluminium different thermal conductivities
Expect surrounding.In order to facilitate the narration of experiment, it is necessary first to silica-base material are abstracted into a cuboid, six faces are respectively labeled as
Front, back, the left side, the right side, above, below.The way of contact of material is as shown in figure 3, left and right two face asbestos, aluminium, stones
Cotton is equidistantly contacted, and front and back two faces asbestos, aluminium, asbestos are equidistantly contacted.Laboratory operating procedures are specific as follows：
Step 1：By the way of contact of Fig. 3, the surrounding of contact silicon substrate is gone with the material of different thermal conductivity.
Step 2；The power of laser is transferred to P=75mW, silicon substrate is irradiated 10 seconds with laser.
Step 3；Laser is closed, then the silica-base material after laser irradiation is placed under AFM (atomic force microscope) and is carried out
Observation, obtains silicon substrate surface form as shown in Figure 4.
Step 4；By AFM (atomic force microscope) measure change after silicon substrate surface form, maximum dimension D with most
The ratio of short diameter W is 0.74, maximum height H=950nm.
The ratio 0.74 of maximum dimension D and most short diameter W are substantially equal to the thermal conductivity k of silicon2With the thermal conductivity k of aluminium3Ratio
0.75, illustrate that the thermal conductivity of adjacent material affects the silicon substrate surface form of silicon substrate.
This experiment realizes silicon substrate surface morphologic change substantially, and the silicon substrate surface form after change is in size and shape
It is generally proximate to pyramid.It can change silicon substrate surface form by the material for different thermal conductivity of arranging in pairs or groups, can not only make silicon substrate
Configuration of surface present pyramidal morphology, other shapes can also, the present invention is not set forth in detail herein.
Above example and with reference to attached drawing, be provided to elaborate the present invention and the rough schematic view that does.This
The technical staff in field by above-mentioned example carry out various forms on modification or change, but without departing substantially from the present invention real situation
Under, it both falls within protection scope of the present invention.
Claims (6)
1. based on the research method of laser controlling nanostructure silicon substrate surface form, it is characterized in that as follows：
One, the silicon substrate of the material nanostructure of different thermal conductivity is used respectively；The material selection of the different thermal conductivity is exhausted
Hot material, same material, Heat Conduction Material；The heat-insulating material selects asbestos, same material to select silicon, Heat Conduction Material aluminium；
Two, the silicon substrate of laser irradiation of nano structure；
Three, silicon substrate surface form is observed, and measures the draw ratio of silicon substrate surface protrusion；
Four, the changing rule of silicon substrate surface form is summarized.
2. based on the research method of laser controlling nanostructure silicon substrate surface form, it is characterized in that as follows：
Step 1, with the silicon substrate surrounding of the material nanostructure of different thermal conductivity；The material of the different thermal conductivity selects
With heat-insulating material, same material, Heat Conduction Material；The heat-insulating material selects asbestos, same material that silicon, Heat Conduction Material is selected to select
Aluminium；
Step 2, laser are irradiated the silicon substrate of nanostructure；
Step 3 closes laser, observes the silicon substrate after laser irradiation；
Step 4 measures the configuration of surface of silicon substrate.
3. the research method as claimed in claim 2 based on laser controlling nanostructure silicon substrate surface form, it is characterized in that：Step
One, the left and right face of silicon substrate is contacted with heat-insulating material, Heat Conduction Material and heat-insulating material, with heat-insulating material, same material, heat insulating material
Material removes contact silicon substrate front-back.
4. the research method as claimed in claim 2 based on laser controlling nanostructure silicon substrate surface form, it is characterized in that：Step
Two, power P=75mW of laser, laser irradiation time t=10s.
5. the research method as claimed in claim 2 based on laser controlling nanostructure silicon substrate surface form, it is characterized in that：Step
Three, pyramid is presented in silicon substrate surface form.
6. the research method as claimed in claim 2 based on laser controlling nanostructure silicon substrate surface form, it is characterized in that：Step
Four, silicon substrate surface maximum dimension D and the ratio of most short diameter W are 0.74, maximum height H=950nm.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201611150104.6A CN106744659B (en) | 2016-12-13 | 2016-12-13 | Research method based on laser controlling nanostructure silicon substrate surface form |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201611150104.6A CN106744659B (en) | 2016-12-13 | 2016-12-13 | Research method based on laser controlling nanostructure silicon substrate surface form |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN106744659A CN106744659A (en) | 2017-05-31 |
| CN106744659B true CN106744659B (en) | 2018-09-07 |
Family
ID=58881085
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201611150104.6A Active CN106744659B (en) | 2016-12-13 | 2016-12-13 | Research method based on laser controlling nanostructure silicon substrate surface form |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN106744659B (en) |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN108318485A (en) * | 2017-12-14 | 2018-07-24 | 杭州电子科技大学 | Based on laser irradiation different materials to the research method of surface micro-structure shaping influence |
Family Cites Families (13)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP0365630B1 (en) * | 1988-03-25 | 1994-03-02 | Thomson-Csf | Process for manufacturing sources of field-emission type electrons, and application for producing emitter networks |
| CN100373563C (en) * | 1998-06-30 | 2008-03-05 | 东芝松下显示技术有限公司 | Thin-film transistor and method of manufacture thereof |
| JP2001284251A (en) * | 2000-03-30 | 2001-10-12 | Sanyo Electric Co Ltd | Semiconductor device and method of fabrication |
| JP2003017408A (en) * | 2001-06-29 | 2003-01-17 | Sanyo Electric Co Ltd | Semiconductor film, method for forming the same and method of manufacturing semiconductor device |
| ATE385038T1 (en) * | 2001-08-11 | 2008-02-15 | Univ Dundee | REAR FIELD EMISSION PLATE |
| CN1259693C (en) * | 2003-04-23 | 2006-06-14 | 友达光电股份有限公司 | Method for preparing low temperature polysilicon thin film and transistor of low temperature polysilicon thin film |
| CN1295751C (en) * | 2003-06-16 | 2007-01-17 | 友达光电股份有限公司 | Method for making polysilicon film |
| CN1635610A (en) * | 2003-12-29 | 2005-07-06 | 统宝光电股份有限公司 | Method for manufacturing cryogenic polysilicon film |
| US7674149B2 (en) * | 2005-04-21 | 2010-03-09 | Industrial Technology Research Institute | Method for fabricating field emitters by using laser-induced re-crystallization |
| CN102655089B (en) * | 2011-11-18 | 2015-08-12 | 京东方科技集团股份有限公司 | A kind of manufacture method of low-temperature polysilicon film |
| CN102651311B (en) * | 2011-12-20 | 2014-12-17 | 京东方科技集团股份有限公司 | Preparation method of low-temperature polycrystalline silicon film and low-temperature polycrystalline silicon film |
| CN104362084B (en) * | 2014-10-08 | 2018-04-13 | 昆山工研院新型平板显示技术中心有限公司 | Low-temperature polysilicon film and preparation method thereof, low-temperature polysilicon film transistor |
| CN105261671B (en) * | 2015-09-08 | 2017-12-19 | 苏州华维纳纳米科技有限公司 | A kind of method that film drop antistructure is prepared using laser direct-writing |
-
2016
- 2016-12-13 CN CN201611150104.6A patent/CN106744659B/en active Active
Also Published As
| Publication number | Publication date |
|---|---|
| CN106744659A (en) | 2017-05-31 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| Choi et al. | Spontaneous occurrence of liquid-solid contact electrification in nature: Toward a robust triboelectric nanogenerator inspired by the natural lotus leaf | |
| Duan et al. | Pool boiling heat transfer on silicon chips with non-uniform micro-pillars | |
| Mi et al. | Non-contact polishing of single crystal diamond by ion beam etching | |
| Yang et al. | Air cushion convection inhibiting icing of self-cleaning surfaces | |
| Hernandez-Rueda et al. | Nanofabrication of tailored surface structures in dielectrics using temporally shaped femtosecond-laser pulses | |
| CN106744659B (en) | Research method based on laser controlling nanostructure silicon substrate surface form | |
| CN103196719B (en) | Used in transmission electron microscope micro-nano particle sample carries net storage facility and sample preparation methods | |
| Ahn et al. | Pool boiling experiments in reduced graphene oxide colloids part II–Behavior after the CHF, and boiling hysteresis | |
| Wang et al. | Both antireflection and superhydrophobicity structures achieved by direct laser interference nanomanufacturing | |
| Chi et al. | Antireflective coatings with adjustable transmittance and high laser-induced damage threshold prepared by deposition of magnesium fluoride nanoparticles | |
| Tarigan et al. | Low reflectance of nano-patterned Pt-Cu-Ni-P bulk metallic glass | |
| Pan et al. | Ultrafast laser hybrid fabrication of hierarchical 3D structures of nanorods on microcones for superhydrophobic surfaces with excellent Cassie state stability and mechanical durability | |
| Liu et al. | Hot embossing of moth eye-like nanostructure array on transparent glass with enhanced antireflection for solar cells | |
| Yamauchi et al. | Blends of a 3-miktoarm star terpolymer (3μ-ISD) of isoprene (I), styrene (S), and dimethylsiloxane (D) with PS and PDMS. Effect on microdomain morphology and grain size | |
| Chen et al. | Transient thermal shock behavior simulation of porous silicon nitride ceramics | |
| Lin et al. | Comparative study of pool boiling heat transfer on different subtractive surfaces | |
| CN109292732A (en) | A kind of broken line type nano gap and preparation method thereof with plasma focus performance | |
| CN202275039U (en) | Temperature control platform apparatus directly used for contact angle instrument | |
| CN106918723A (en) | A kind of multiprobe detection method under controlled atmosphere based on AFM | |
| Su-Yuan et al. | Thermal conductivity measurement of submicron-thick aluminium oxide thin films by a transient thermo-reflectance technique | |
| Zhao et al. | Modeling and prediction of structural/thermophysical properties of sintered NiO/YSZ anode for SOFC by molecular dynamics method | |
| Li et al. | Biomimetic random arrays of nanopillars and nanocones with robust antiwetting characteristics | |
| CN103268933B (en) | Al-Sn film negative electrode and preparation method thereof | |
| Cai et al. | Induction-heated nanoimprint on soda-lime glass using sapphire molds | |
| CN205246575U (en) | Transmission scanning electron microscope power, loaded normal position in thermal coupling field experiment platform |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PB01 | Publication | ||
| PB01 | Publication | ||
| SE01 | Entry into force of request for substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| GR01 | Patent grant | ||
| GR01 | Patent grant | ||
| TR01 | Transfer of patent right | ||
| TR01 | Transfer of patent right |
Effective date of registration: 20201111 Address after: 310012 room 2603, building 8, No. 2, xiyuanba Road, Sandun Town, Xihu District, Hangzhou City, Zhejiang Province Patentee after: HANGZHOU ZHUILIE TECHNOLOGY Co.,Ltd. Address before: 310018, No. 1, No. 2, Poplar Street, Hangzhou economic and Technological Development Zone, Hangzhou, Zhejiang Patentee before: HANGZHOU DIANZI University |
|
| TR01 | Transfer of patent right |
Effective date of registration: 20201204 Address after: 241100 8 / F, building 5, Wuhu TONGHANG Innovation Park, Wanbi Town, Wuhu City, Anhui Province Patentee after: Wuhu Digital Information Industrial Park Co.,Ltd. Address before: 310012 room 2603, building 8, No. 2, xiyuanba Road, Sandun Town, Xihu District, Hangzhou City, Zhejiang Province Patentee before: HANGZHOU ZHUILIE TECHNOLOGY Co.,Ltd. |
|
| TR01 | Transfer of patent right | ||
| EE01 | Entry into force of recordation of patent licensing contract | ||
| EE01 | Entry into force of recordation of patent licensing contract |
Application publication date: 20170531 Assignee: ZHEJIANG QIPINTONG NETWORK TECHNOLOGY CO.,LTD. Assignor: Wuhu Digital Information Industrial Park Co.,Ltd. Contract record no.: X2021330000733 Denomination of invention: Research method of surface morphology of nanostructured silicon based on laser control Granted publication date: 20180907 License type: Common License Record date: 20211109 |
|
| EC01 | Cancellation of recordation of patent licensing contract | ||
| EC01 | Cancellation of recordation of patent licensing contract |
Assignee: ZHEJIANG QIPINTONG NETWORK TECHNOLOGY CO.,LTD. Assignor: Wuhu Digital Information Industrial Park Co.,Ltd. Contract record no.: X2021330000733 Date of cancellation: 20240204 |
|
| TR01 | Transfer of patent right |
Effective date of registration: 20241011 Address after: Room 408-8, 4 / F, building 2, Haichuang technology center, Cangqian street, Yuhang District, Hangzhou City, Zhejiang Province, 311100 Patentee after: HANGZHOU ZHUILIE TECHNOLOGY Co.,Ltd. Country or region after: China Address before: 241100 8 / F, building 5, Wuhu TONGHANG Innovation Park, Wanbi Town, Wuhu City, Anhui Province Patentee before: Wuhu Digital Information Industrial Park Co.,Ltd. Country or region before: China |