CN106744642A - The hybrid ultrasonic transducer face battle array probe of broadband and preparation method of receiving-transmitting balance - Google Patents
The hybrid ultrasonic transducer face battle array probe of broadband and preparation method of receiving-transmitting balance Download PDFInfo
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- CN106744642A CN106744642A CN201710009218.7A CN201710009218A CN106744642A CN 106744642 A CN106744642 A CN 106744642A CN 201710009218 A CN201710009218 A CN 201710009218A CN 106744642 A CN106744642 A CN 106744642A
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81B—MICROSTRUCTURAL DEVICES OR SYSTEMS, e.g. MICROMECHANICAL DEVICES
- B81B3/00—Devices comprising flexible or deformable elements, e.g. comprising elastic tongues or membranes
- B81B3/0018—Structures acting upon the moving or flexible element for transforming energy into mechanical movement or vice versa, i.e. actuators, sensors, generators
- B81B3/0021—Transducers for transforming electrical into mechanical energy or vice versa
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B06—GENERATING OR TRANSMITTING MECHANICAL VIBRATIONS IN GENERAL
- B06B—METHODS OR APPARATUS FOR GENERATING OR TRANSMITTING MECHANICAL VIBRATIONS OF INFRASONIC, SONIC, OR ULTRASONIC FREQUENCY, e.g. FOR PERFORMING MECHANICAL WORK IN GENERAL
- B06B1/00—Methods or apparatus for generating mechanical vibrations of infrasonic, sonic, or ultrasonic frequency
- B06B1/02—Methods or apparatus for generating mechanical vibrations of infrasonic, sonic, or ultrasonic frequency making use of electrical energy
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
- B81C1/00—Manufacture or treatment of devices or systems in or on a substrate
- B81C1/00015—Manufacture or treatment of devices or systems in or on a substrate for manufacturing microsystems
- B81C1/00134—Manufacture or treatment of devices or systems in or on a substrate for manufacturing microsystems comprising flexible or deformable structures
- B81C1/00158—Diaphragms, membranes
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01S—RADIO DIRECTION-FINDING; RADIO NAVIGATION; DETERMINING DISTANCE OR VELOCITY BY USE OF RADIO WAVES; LOCATING OR PRESENCE-DETECTING BY USE OF THE REFLECTION OR RERADIATION OF RADIO WAVES; ANALOGOUS ARRANGEMENTS USING OTHER WAVES
- G01S7/00—Details of systems according to groups G01S13/00, G01S15/00, G01S17/00
- G01S7/52—Details of systems according to groups G01S13/00, G01S15/00, G01S17/00 of systems according to group G01S15/00
- G01S7/521—Constructional features
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- Radar, Positioning & Navigation (AREA)
- Physics & Mathematics (AREA)
- Computer Networks & Wireless Communication (AREA)
- Mechanical Engineering (AREA)
- Chemical & Material Sciences (AREA)
- Analytical Chemistry (AREA)
- Computer Hardware Design (AREA)
- Ultra Sonic Daignosis Equipment (AREA)
- Transducers For Ultrasonic Waves (AREA)
Abstract
The invention discloses a kind of hybrid ultrasonic transducer face battle array probe of broadband of receiving-transmitting balance, including silicon substrate（1）, the silicon substrate（1）Upper surface be oxide layer（2）, the oxide layer（2）Upper surface offer some cavitys（3）, some cavitys（3）In a row, row arrangement, the oxide layer（2）Upper surface bonding vibration film（4）, the vibration film（4）Upper surface set separation layer（5）, around separation layer（5）Edge and its inside offer the isolation channel of sinking（6）, the isolation channel（6）Through separation layer（5）And vibration film（4）Afterwards, its bottom land is opened in oxide layer（2）On；The separation layer（5）Upper surface on just to each cavity（3）Center position be provided with Top electrode（7）.Structure of ultrasonic novelty of the present invention, small volume, bandwidth, sensitivity are high, and noise is low, good stability, receive and dispatch performance balance.
Description
Technical field
It is specifically a kind of for finding range the present invention relates to the capacitive micromachined ultrasonic transducer in MEMS sensor field
With the capacitive micro-electromechanical ultrasonic transducer structures design of imaging and preparation method thereof, with transmitting-receiving ability it is balanced the characteristics of.
Background technology
With MEMS（MEMS, Micro-electromechanical Systems）It is fast with nanometer technique
Speed development, the manufacture of sensor enters a brand-new stage.At present, sonac type mainly has piezoelectric type, pressure drag
Formula and condenser type three major types.Wherein, capacitive micromachined ultrasonic transducer（capacitive micro-machined
ultrasonic transducer, CMUT）Design, processing are flexible, are influenced by temperature smaller, response broadband, make material
Material is matched with Medium impedence, it is easy to which array is processed.Can also be by integrated circuit processing at the back side of sensor, between reducing circuit
The introducing of effect of parasitic capacitance and interference signal.After technological process to be manufactured determines, the system of sonac can be greatly reduced
Cause this.
At present, micro Process electric capacity ultrasonic transducer can only cause that a wherein side has preferably in terms of reception and emissivities
Performance.When CMUT is used in transceiver system, emissivities are weaker at identical conditions.
The content of the invention
The invention aims to solve above-mentioned problems of the prior art, and propose a kind of the new of receiving-transmitting balance
Hybrid ultrasonic transducer structures of molded breadth frequency band and preparation method thereof.
The present invention adopts the following technical scheme that realization：
A kind of hybrid ultrasonic transducer face battle array probe of the broadband of receiving-transmitting balance, including silicon substrate, the upper table of the silicon substrate
Face is oxide layer, and the upper surface of the oxide layer offers some cylindrical cavities, the upper surface bonding vibration of the oxide layer
Film, the upper surface of the vibration film sets separation layer, and the edge and its inside around separation layer offer sinking
Isolation channel, after separation layer and vibration film, its bottom land is opened in oxide layer the isolation channel；The upper table of the separation layer
Center position on face just to each cylindrical cavity is provided with Top electrode.
Some cylindrical cavities in the oxide layer form an array element after being located in same area of isolation；One array element
Interior, cylindrical cavity is divided into two kinds of diameters of A, B.
The edge position that the upper surface of the separation layer is located in an array element is provided with a pad, every in an array element
Row two adjacent Top electrodes between and two adjacent Top electrodes of each column between by metal lead wire connect, the pad with
Connected by metal lead wire between one Top electrode of its nearest neighbours.
Or, the edge position that the upper surface of the separation layer is located in an array element is provided with two pads, a battle array
Top electrode corresponding to the cylindrical cavity of first interior diameter A is connected by metal lead wire with one of pad；In one array element
Top electrode corresponding to the cylindrical cavity of diameter B is connected by metal lead wire with other in which pad.
Phosphorus is injected at the silicon substrate back side, and row metal of going forward side by side sputters to form bottom electrode.
Multiple array elements are in a row, column alignment arrangement, form CMUT faces battle array, and face battle array is arranged as M*N, composition ultrasonic transducer face
Battle array probe.
During work, DC voltage is applied on the upper/lower electrode of probe, electrostatic force will be produced between two-plate, in electrostatic force
In the presence of vibration film produce and deformation and be pulled to substrate, also increase as thin film strain increases mechanical return force in film,
Finally with electrostatic dynamic balance.This measure is conducive to improving electromechanical conversion efficiency.If it is X now to apply frequency on upper/lower electrode（X takes
Value is in response range）Alternating voltage signal, the effect of alternating voltage signal broken film and set up at a dc voltage
Equilibrium relation, film can so constantly vibrated, send ultrasonic wave, realize the function of transmitting ultrasonic wave；If there is ultrasonic wave to make
With on film, can equally make film disequilibrium move up and down, bottom crown spacing is caused to change, so as to cause electric capacity
Change, the electric current that external circuit can cause capacitance variations is converted to measurable voltage signal, realizes the reception of ultrasonic wave.
The preparation method of the hybrid ultrasonic transducer face battle array probe of broadband of above-mentioned receiving-transmitting balance, comprises the following steps：
（1）, selection silicon chip and SOI wafer, carry out standard RCA clean；
（2）, oxidation processes are carried out to silicon chip, its upper and lower surface is all formed oxide layer；
（3）, photoetching is carried out in the oxide layer of silicon chip upper surface, etch the cavity of diameter A；
（4）, silicon chip upper surface again after photoetching oxide layer on carry out photoetching, the cavity to section diameter A is further carved
Erosion, forms the cavity of diameter B；
（5）, carry out to silicon chip standard RCA clean and go forward side by side line activating, the oxide layer and SOI wafer that silicon chip upper surface is made after activation are entered
Row low-temperature bonding；
（6）, the substrate silicon of SOI wafer is corroded with TMAH solution after bonding, fall silicon chip with BOE solution corrosions again after cleaning
The oxide layer in oxide layer and SOI wafer on lower surface, silicon chip now is the remaining silicon layer of silicon substrate, SOI wafer i.e.
It is vibration film；
（7）, layer of silicon dioxide layer deposited on vibration film as separation layer using LPCVD techniques；
（8）, etch around the edge and inside of separation layer the part to form isolation channel, and corrode with TMAH solution
Isolation channel, after separation layer and vibration film, its bottom land is opened in oxide layer isolation channel；
（9）, in the upper surface of separation layer by electron beam evaporation methods splash-proofing sputtering metal, and with the method peeled off formed Top electrode with
Pad；
（10）, each Top electrode and pad connected by metal lead wire；
（11）, silicon chip the back side inject phosphorus, form good Ohmic contact with silicon chip；
（12）, silicon substrate carry out metal sputtering formed bottom electrode.
When being received when popping one's head in, the signal in a broadband reaches probe, makes its vibrations so as to be operated.When probe is sent out
Radius when penetrating due to chamber is different, so as to the frequency for sending is different.Innovation of the invention is set in same array element
The cavity of different-diameter is counted, frequency range is increased with this, make the frequency band of probe transmitting and reception broadening, balanced its transmitting-receiving property
Energy.
The present invention is reasonable in design, the new microelectromechanical ultrasound energy converter planar battle array probe of the receiving-transmitting balance, solves existing condenser type
Transmitting and receptivity imbalance problem in microelectromechanical ultrasound probe, realize the consistent of transducer transmitting-receiving performance, realize transducer
Broadband.
Structure of ultrasonic novelty of the present invention, small volume, bandwidth, sensitivity are high, and noise is low, good stability, transmitting-receiving property
Can balance.
Brief description of the drawings
Fig. 1-1 represents a structural representation for array element in energy converter planar battle array probe of the present invention, wherein, in an array element not
All linked together with the deeply corresponding Top electrode metal lead wire in chamber.
Fig. 1-2 represents a structural representation for array element in energy converter planar battle array probe of the present invention, wherein, in an array element not
It is respectively connected together with metal lead wire with the deeply corresponding Top electrode in chamber.
Fig. 2 represents a sectional view for array element.
Fig. 3 represents step 2 in transducer preparation method of the present invention）Schematic diagram.
Fig. 4 represents step 3 in transducer preparation method of the present invention）Schematic diagram.
Fig. 5 represents step 4 in transducer preparation method of the present invention）Schematic diagram.
Fig. 6 represents step 5 in transducer preparation method of the present invention）Schematic diagram.
Fig. 7 represents step 6 in transducer preparation method of the present invention）Schematic diagram.
Fig. 8 represents step 7 in transducer preparation method of the present invention）Schematic diagram.
Fig. 9 represents step 8 in transducer preparation method of the present invention）Schematic diagram.
Figure 10 represents step 9 in transducer preparation method of the present invention）Schematic diagram.
Figure 11 represents step 12 in transducer preparation method of the present invention）Schematic diagram.
In figure：1- silicon substrates, 2- oxide layers, 3- cylindrical cavities, 4- vibration films, 5- separation layers, 6- Top electrodes, 7- welderings
Disk, 8- isolation channels, 9- metal lead wires, 10- bottom electrodes.
Specific embodiment
Specific embodiment of the invention is described in detail below in conjunction with the accompanying drawings.
A kind of hybrid ultrasonic transducer face battle array probe of the broadband of receiving-transmitting balance, by multiple array elements in a row, column alignment cloth
Put, form CMUT faces battle array probe, face battle array can be arranged as M*N, wherein M can value 16 ~ 512, N can value 16 ~ 512.
As shown in Fig. 2 representing an array element（element）Sectional view, including silicon substrate 1, the upper surface of the silicon substrate 1
It is oxide layer 2, the upper surface of the oxide layer 2 offers some cylindrical cavities 3, and cylindrical cavity 3 is in a row, row arrangement or right
Angle arranges that the upper surface of the oxide layer 2 bonding vibration film 4, the upper surface of the vibration film 4 sets separation layer 5, around every
The edge and its inside of absciss layer 5 offer the isolation channel 6 of sinking（Isolation channel is used to separate each array element）, the isolation channel
6 after separation layer 5 and vibration film 4, and its bottom land is opened in oxide layer 2；Just to each on the upper surface of the separation layer 5
The center position of cavity 3 is provided with Top electrode 7（Form graphical Top electrode）；Some cavitys 3 in the oxide layer 2 are located at same
An array element is formed after in one area of isolation；In one array element, 3 points of cavity is two kinds of different-diameters of A, B.
The connected mode of Top electrode has two kinds in one array element：（a）The unit Top electrode of different-diameter cavity is drawn with metal
Line all links together；（b）The unit Top electrode of different-diameter cavity is respectively connected together using metal lead wire.Specifically such as
Under：
As Figure 1-1, the edge position that the upper surface of the separation layer 5 is located in an array element is provided with a pad 8, one
Connected by metal lead wire 9 between the two adjacent Top electrodes 7 often arranged in individual array element and between two adjacent Top electrodes 7 of each column
Connect, connected by metal lead wire 9 between the pad 8 and a Top electrode 7 of its nearest neighbours.
As shown in Figure 1-2, the edge position that the upper surface of the separation layer 5 is located in an array element is provided with two pads
The cylindrical cavity of 8, diameter A and diameter B is in interval row arrangement, the Top electrode 7 corresponding to a cavity 3 of array element interior diameter A
It is connected with one of pad 8 by metal lead wire 9；Top electrode 7 corresponding to one cavity 3 of array element interior diameter B is by gold
Category lead 9 is connected with other in which pad 8.
Phosphorus is injected at the back side of the silicon substrate 1, and row metal of going forward side by side sputters to form integrated bottom electrode 10.
In the present invention, microvibration unit（cell）Structure design, by its structure design for cylinder, arrangement more step up
Close, repeat unit increases under limited area, improves transducer sensitivity, and by designing the housing width of different radii
The problem narrow to improve transducer frequency band.
The preparation method of the hybrid ultrasonic transducer face battle array probe of broadband of above-mentioned receiving-transmitting balance, comprises the following steps：
（1）, selection silicon chip and SOI wafer, standard RCA clean is carried out, to remove various organic matters, golden dust and natural oxidizing layer
Deng；
（2）, oxidation processes are carried out to silicon chip, its upper and lower surface is all formed oxide layer, be that etching cylindrical cavity is valid below
It is standby；
（3）, photoetching is carried out in the oxide layer of silicon chip upper surface, etch the cavity of diameter A, photoetching includes surface treatment, rotation
Turn gluing, front baking, alignment and exposure, the conventional steps such as dry, develop, etch and remove photoresist afterwards；
（4）, silicon chip upper surface again after photoetching oxide layer on carry out photoetching, the cavity to section diameter A is further carved
Erosion, forms the cavity of diameter B；
（5）, carry out to silicon chip standard RCA clean and go forward side by side line activating, the oxide layer and SOI wafer that silicon chip upper surface is made after activation are entered
Row low-temperature bonding；
（6）, the substrate silicon of SOI wafer is corroded with TMAH solution after bonding, fall silicon chip with BOE solution corrosions again after cleaning
The oxide layer in oxide layer and SOI wafer on lower surface, silicon chip now is the remaining silicon layer of silicon substrate, SOI wafer i.e.
It is vibration film；
（7）, layer of silicon dioxide layer deposited on vibration film as separation layer using LPCVD techniques, prevent evaporation metal shape
Into during Top electrode to the chanza of vibration film；
（8）, etch around the edge and inside of separation layer the part to form isolation channel, and corrode with TMAH solution
Isolation channel, after separation layer and vibration film, its bottom land is opened in oxide layer isolation channel；
（9）, in the upper surface of separation layer by electron beam evaporation methods splash-proofing sputtering metal, and with the method peeled off formed Top electrode with
Pad；
（10）, each Top electrode and pad connected by metal lead wire；
（11）, silicon chip the back side inject phosphorus, form good Ohmic contact with silicon chip；
（12）, carry out metal sputtering in silicon substrate and form integrated bottom electrode.
It should be noted last that, the above embodiments are merely illustrative of the technical solutions of the present invention and it is unrestricted, although ginseng
It has been described in detail according to the embodiment of the present invention, it will be understood by those within the art that, to technical scheme
Modify or equivalent, without departure from the spirit and scope of technical scheme, it all should cover claim
In protection domain.
Claims (3)
1. a kind of hybrid ultrasonic transducer face battle array of broadband of receiving-transmitting balance is popped one's head in, it is characterised in that：Including silicon substrate（1）,
The silicon substrate（1）Upper surface be oxide layer（2）, the oxide layer（2）Upper surface offer some cylindrical cavities
（3）, the oxide layer（2）Upper surface bonding vibration film（4）, the vibration film（4）Upper surface set separation layer（5）,
Around separation layer（5）Edge and its inside offer the isolation channel of sinking（6）, the isolation channel（6）Through isolation
Layer（5）And vibration film（4）Afterwards, its bottom land is opened in oxide layer（2）On；The separation layer（5）Upper surface on just to each
Cylindrical cavity（3）Center position be provided with Top electrode（7）；
The oxide layer（2）On some cylindrical cavities（3）An array element is formed after in same area of isolation；One battle array
In first, cylindrical cavity（3）It is divided into two kinds of diameters of A, B；
The separation layer（5）Upper surface be located at an array element in edge position be provided with a pad（8）, in an array element
The two adjacent Top electrodes often arranged（7）Between and each column two adjacent Top electrodes（7）Between pass through metal lead wire（9）Even
Connect, the pad（8）With a Top electrode of its nearest neighbours（7）Between pass through metal lead wire（9）Connection；
Or, the separation layer（5）Upper surface be located at an array element in edge position be provided with two pads（8）, one
The cylindrical cavity of array element interior diameter A（3）Corresponding Top electrode（7）By metal lead wire（9）With one of pad（8）Even
Connect；One cylindrical cavity of array element interior diameter B（3）Corresponding Top electrode（7）By metal lead wire（9）With other in which
Pad（8）Connection；
The silicon substrate（1）Phosphorus is injected at the back side, and row metal of going forward side by side sputters to form bottom electrode（10）；
Multiple array elements are in a row, column alignment arrangement, form CMUT faces battle array, and face battle array is arranged as M*N, and composition ultrasonic transducer face battle array is visited
Head.
2. the hybrid ultrasonic transducer face battle array of the broadband of receiving-transmitting balance according to claim 1 is popped one's head in, it is characterised in that：
The M values 16 ~ 512, the N values 16 ~ 512.
3. the preparation method that a kind of hybrid ultrasonic transducer face battle array of broadband of receiving-transmitting balance is popped one's head in, it is characterised in that：Including
Following steps：
（1）, selection silicon chip and SOI wafer, carry out standard RCA clean；
（2）, oxidation processes are carried out to silicon chip, its upper and lower surface is all formed oxide layer；
（3）, photoetching is carried out in the oxide layer of silicon chip upper surface, etch the cavity of diameter A；
（4）, silicon chip upper surface again after photoetching oxide layer on carry out photoetching, the cavity to section diameter A is further carved
Erosion, forms the cavity of diameter B；
（5）, carry out to silicon chip standard RCA clean and go forward side by side line activating, the oxide layer and SOI wafer that silicon chip upper surface is made after activation are entered
Row low-temperature bonding；
（6）, the substrate silicon of SOI wafer is corroded with TMAH solution after bonding, fall silicon chip with BOE solution corrosions again after cleaning
The oxide layer in oxide layer and SOI wafer on lower surface, silicon chip now is the remaining silicon layer of silicon substrate, SOI wafer i.e.
It is vibration film；
（7）, layer of silicon dioxide layer deposited on vibration film as separation layer using LPCVD techniques；
（8）, etch around the edge and inside of separation layer the part to form isolation channel, and corrode with TMAH solution
Isolation channel, after separation layer and vibration film, its bottom land is opened in oxide layer isolation channel；
（9）, in the upper surface of separation layer by electron beam evaporation methods splash-proofing sputtering metal, and with the method peeled off formed Top electrode with
Pad；
（10）, each Top electrode and pad connected by metal lead wire；
（11）, silicon chip the back side inject phosphorus, form good Ohmic contact with silicon chip；
（12）, silicon substrate carry out metal sputtering formed bottom electrode.
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Cited By (7)
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| CN108190828A (en) * | 2018-02-07 | 2018-06-22 | 北京先通康桥医药科技有限公司 | MEMS sensor linear array, palaption probe and its manufacturing method |
| CN109244232A (en) * | 2018-09-13 | 2019-01-18 | 徐景辉 | MEMS PZT (piezoelectric transducer) and production method |
| CN110570836A (en) * | 2019-09-24 | 2019-12-13 | 中北大学 | Ultrasonic transducer and preparation method thereof |
| CN112517361A (en) * | 2020-11-30 | 2021-03-19 | 国网山西省电力公司朔州供电公司 | High-sensitivity multi-band combined type air-coupled ultrasonic transducer and preparation method thereof |
| CN113120854A (en) * | 2021-03-03 | 2021-07-16 | 复旦大学 | Back lining type high-frequency broadband PMUT unit and PMUT array |
| CN113751297A (en) * | 2021-09-10 | 2021-12-07 | 中北大学 | Capacitive micro-machined ultrasonic transducer based on silicon waveguide tube eutectic bonding technology and preparation method thereof |
| CN114408853A (en) * | 2021-11-30 | 2022-04-29 | 西安交通大学 | Rigid-flexible fusion capacitive flexible MEMS ultrasonic transducer and preparation method thereof |
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| Publication number | Priority date | Publication date | Assignee | Title |
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| CN113120854A (en) * | 2021-03-03 | 2021-07-16 | 复旦大学 | Back lining type high-frequency broadband PMUT unit and PMUT array |
| CN113120854B (en) * | 2021-03-03 | 2024-01-23 | 复旦大学 | Backing type high-frequency broadband PMUT unit and PMUT array |
| CN113751297A (en) * | 2021-09-10 | 2021-12-07 | 中北大学 | Capacitive micro-machined ultrasonic transducer based on silicon waveguide tube eutectic bonding technology and preparation method thereof |
| CN114408853A (en) * | 2021-11-30 | 2022-04-29 | 西安交通大学 | Rigid-flexible fusion capacitive flexible MEMS ultrasonic transducer and preparation method thereof |
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