CN106711179B - AMOLED transparent display and preparation method thereof - Google Patents
AMOLED transparent display and preparation method thereof Download PDFInfo
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- CN106711179B CN106711179B CN201611238025.0A CN201611238025A CN106711179B CN 106711179 B CN106711179 B CN 106711179B CN 201611238025 A CN201611238025 A CN 201611238025A CN 106711179 B CN106711179 B CN 106711179B
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- H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
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- H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
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- H10K59/12—Active-matrix OLED [AMOLED] displays
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Abstract
The present invention provides a kind of AMOLED transparent display and preparation method thereof.The production method of AMOLED transparent display of the invention, the 6th via hole on the first flatness layer is prepared by using a special light shield, so that the hole wall of the 6th via hole has a plurality of groove or is in ramped shaped, the residual quantity of the anode material on hole wall to reduce the 6th via hole, and then the residual quantity of the anode material in the fifth hole for constituting the clear subpixel of the AMOLED transparent display is reduced, promote the display performance of AMOLED transparent display.AMOLED transparent display of the invention, by setting the hole wall of the 6th via hole on the first flatness layer to there is a plurality of groove or in ramped shaped, the residual quantity of the anode material on hole wall to reduce the 6th via hole, and then the residual quantity of the anode material in the fifth hole for constituting the clear subpixel of the AMOLED transparent display is reduced, there is preferable display performance.
Description
Technical field
The present invention relates to field of display technology more particularly to a kind of AMOLED transparent display and preparation method thereof.
Background technique
Transparent display generally refers to that transparence display state can be formed so that the shadow shown in display can be seen in viewer
The display of the scene of picture and display back.Transparent display has many possible applications, such as building or automobile
The displaying window of window and shopping plaza.
Organic Light Emitting Diode (Organic Light-Emitting Diode, OLED) display, also referred to as Organic Electricity
Electroluminescent display is a kind of emerging panel display apparatus, since it is simple with preparation process, at low cost, low in energy consumption, hair
Brightness height, operating temperature wide adaptation range, volume be frivolous, fast response time, and is easily achieved colored display and large screen
It shows, be easily achieved and match with driver ic, be easily achieved the advantages that Flexible Displays, thus there is wide application
Prospect.
OLED according to driving method can be divided into passive matrix OLED (Passive Matrix OLED, PMOLED) and
Active array type OLED (Active Matrix OLED, AMOLED) two major classes, i.e. directly addressing and thin film transistor (TFT) (Thin
Film Transistor, TFT) two class of matrix addressing.Wherein, AMOLED has the pixel in array arrangement, belongs to actively aobvious
Show type, luminous efficacy is high, is typically used as large scale display device high-definition.
It the use of AMOLED technology production transparent display is a kind of good selection.The principle of luminosity of AMOLED is: using ITO
Transparent electrode and metal electrode respectively as device anode and cathode, under certain voltage driving, electrons and holes respectively from
Cathode and anode are injected into electron transfer layer and hole transmission layer, and electrons and holes pass through electron transfer layer respectively and hole passes
Defeated layer moves in luminescent layer, and meets in luminescent layer, forms exciton and excites light emitting molecule and shine.AMOLED
During the preparation process main difficulty is that how to guarantee what display screen light transmittance with higher and viewing area yield guaranteed
Problem.
Fig. 1 is the pixel design diagram of existing AMOLED transparent display, as shown in Figure 1, the AMOLED is transparent
Display includes multiple light emitting sub-pixels 111 and multiple clear subpixels 222；The multiple light emitting sub-pixel 111 includes multiple
Red sub-pixel 101, multiple green sub-pixels 102 and multiple blue subpixels 103.
Fig. 2 is the schematic cross-sectional view of existing AMOLED transparent display, as shown in Fig. 2, the AMOLED transparence display
Device includes underlay substrate 100, the grid 110 on the underlay substrate 100, is set to the grid 110 and underlay substrate 100
On gate insulating layer 200, the active layer 210 on the gate insulating layer 200, be set to the active layer 210 and grid
Etching barrier layer 300 on insulating layer 200 on the etching barrier layer 300 and corresponds respectively to 210 liang of the active layer
The first through hole 310 at end and the second through-hole 320 are set on the etching barrier layer 300 and respectively via the first through hole 310
The source electrode 410 that is in contact with the second through-hole 320 with the active layer 210 and drain electrode 420, be set to the source electrode 410, drain electrode 420,
And the passivation layer 500 on etching barrier layer 300, the first flatness layer 600 on the passivation layer 500, be set to described first
The second flatness layer 700 on flatness layer 600 is set to first flatness layer 600 and on passivation layer 500 and corresponds to the drain electrode
420 top third through-hole 630, be set to second flatness layer 700 on and fourth hole corresponding with third through-hole 630
740, in the fourth hole 740 and via the third through-hole 630 with it is described drain electrode 420 be in contact anode 910, set
In the OLED luminescent layer 920 on the anode 910, several supporters 790 on second flatness layer 700, it is set to institute
State the 5th on the second flatness layer 700, the first flatness layer 600, passivation layer 500, etching barrier layer 300 and gate insulating layer 200
Through-hole 755 and be set to several supporters 790, the second flatness layer 700, OLED luminescent layer 920 and underlay substrate 100 on
Cathode 930；
The fifth hole 755 is made of the multiple via holes for being correspondingly arranged and being mutually communicated up and down, the multiple via hole packet
Include be located at the gate insulating layer 200 on the first via hole 120, the second via hole 130 on the etching barrier layer 300,
Third via hole 530, the 4th via hole 640 on first flatness layer 600, Yi Jiwei on the passivation layer 500
The 5th via hole 750 on second flatness layer 700；
Due to being equipped with OLED luminescent layer 920 in the fourth hole 740, to constitute the AMOLED transparent display
Light emitting sub-pixel 111；Not set OLED luminescent layer 92 in the fifth hole 755, to constitute the AMOLED transparence display
The clear subpixel 222 of device.
Specifically, the processing procedure of the anode 910 is usually arranged in after the processing procedure of first flatness layer 600 and described the
Before the processing procedure of two flatness layers 700, in other words, before the material for depositing the anode 910, the gate insulating layer 200,
Etching barrier layer 300, passivation layer 500, the first flatness layer 600 and it is located at the gate insulating layer 200, etch stopper
Layer 300, passivation layer 500, the first via hole 120 on the first flatness layer 600, the second via hole 130, third via hole 530 and the 4th mistake
Hole 640 has completed, due to first via hole 120, the second via hole 130, third via hole 530 and the 4th via hole 640
Hole wall is all very precipitous, therefore when carrying out the lithographic process of anode 910, first via hole 120, the second via hole 130, third mistake
Photoresist residual easy to form on the hole wall of hole 530 and the 4th via hole 640, so that being deposited on first via hole 120, the second via hole
130, the anode material on the hole wall of third via hole 530 and the 4th via hole 640 cannot be now completely etched away, to remain on described
In first via hole 120, the second via hole 130, third via hole 530 and the 4th via hole 640, it is transparent aobvious to ultimately cause AMOLED obtained
Show and remain anode material in the fifth hole 755 of device, remaining anode material can be brought all windy in the fifth hole 755
Then it causes to be located at and shines sub- picture as induced the short circuit between route, the problems such as static discharge (ESD) and cathode impedance is uneven in danger
The driving of the OLED luminescent layer 92 in plain 111 regions is affected, and it is abnormal to eventually lead to display.
Due in the gate insulating layer 200, etching barrier layer 300, passivation layer 500 and the first flatness layer 600, described
The thickness of one flatness layer 600 is maximum, therefore, the surface area of the hole wall of the 4th via hole 640 on first flatness layer 600
Maximum, so that the residual quantity of the anode material on the hole wall of the 4th via hole 640 is also maximum, that is to say, that if reduced
The residual quantity of anode material on the hole wall of 4th via hole 640, then, anode material in the fifth hole 755
Residual quantity will be reduced greatly；Therefore, the display performance progress the present invention is based on the above thinking to AMOLED transparent display
Improve.
Summary of the invention
The purpose of the present invention is to provide a kind of production methods of AMOLED transparent display, can reduce described in composition
The residual quantity of anode material in the fifth hole of the clear subpixel of AMOLED transparent display, so that it is transparent to promote AMOLED
The display performance of display.
The object of the invention is also to provide a kind of AMOLED transparent displays, constitute the AMOLED transparent display
The residual quantity of anode material in the fifth hole of clear subpixel is low, has preferable display performance.
To achieve the above object, the present invention provides a kind of production method of AMOLED transparent display, includes the following steps:
Step 1, provide a underlay substrate, sequentially formed from top to bottom on the underlay substrate grid, gate insulating layer,
Active layer, etching barrier layer, source electrode and drain electrode, passivation layer and the first flatness layer；
In first flatness layer, passivation layer, etching barrier layer and gate insulating layer, the thickness of first flatness layer is most
Greatly；
The etching barrier layer, which is equipped with, corresponds respectively to the first through hole at the active layer both ends and the second through-hole, described
Source electrode and drain electrode is in contact via the first through hole and the second through-hole with the active layer respectively；
The passivation layer is equipped with the first via hole corresponded to above the drain electrode, and the gate insulating layer is equipped with second
Via hole, the etching barrier layer are equipped with third via hole, and the passivation layer is equipped with the 4th via hole, second via hole, third
Via hole, the 4th via hole are correspondingly arranged and are mutually communicated up and down；
Step 2 provides the first light shield, and first light shield is equipped with several first light-transparent patterns and several second light transmission figures
Case；First light-transparent pattern includes continuous continual first transparent area；Second light-transparent pattern includes continuous uninterrupted
The second transparent area and be arranged successively along the periphery of second transparent area and be respectively connected with second transparent area
Several miniature transparent areas；
First flatness layer is exposed using first light shield, is developed, is formed on first flatness layer
The 5th via hole corresponding to first light-transparent pattern and the 6th via hole corresponding to second light-transparent pattern；
5th via hole is correspondingly arranged and is mutually communicated up and down with first via hole, collectively forms third through-hole；
6th via hole is correspondingly arranged and is mutually communicated up and down with the 4th via hole, third via hole, the second via hole；
Spaced several grooves are formed on the hole wall of 6th via hole and between several grooves
Several lug bosses or the hole wall of the 6th via hole be from the position far from the 6th via hole to close to the 6th mistake
The slope being highly gradually reduced on the direction of the position in hole；
Step 3 is formed on first flatness layer via the third through-hole and the anode for draining and being in contact；
Step 4 forms the second flatness layer on first flatness layer, is formed on second flatness layer and corresponds to institute
The 7th via hole for stating the fourth hole above anode and being correspondingly arranged and be mutually communicated up and down with the 6th via hole；It is described from
Under to upper the second via hole successively to connect, third via hole, the 4th via hole, the 6th via hole and the 7th via hole collectively form the 5th
Through-hole；
Several supporters are formed on second flatness layer；
Step 5 forms OLED luminescent layer on the anode；
Cathode is formed on second flatness layer, several supporters, OLED luminescent layer and underlay substrate.
In the step 2, several miniature transparent areas are spaced several rectangle transparent areas, and the rectangle is saturating
The side length in light area is 3 μm to 5 μm；
Be formed on the hole wall of 6th via hole several grooves for corresponding respectively to several rectangle transparent areas and
Several lug bosses between several grooves；The slot bottom of the groove is deep relative to the depression in the surface of the lug boss
Degree is 3 μm to 5 μm.
In the step 2, several miniature transparent areas are spaced several rectangle transparent areas, and the rectangle is saturating
The side length in light area is 1 μm to 3 μm；
The hole wall of 6th via hole is from the position far from the 6th via hole to the position close to the 6th via hole
Direction on the slope that is highly gradually reduced；The gradient on the slope is 45 °~70 °, i.e., the hole wall of described 6th via hole and institute
Stating the angle between passivation layer is 45 °~70 °；The width on the slope is 1 μm to 3 μm.
In the step 2, several miniature transparent areas are to be sequentially connected or spaced several triangle light transmissions
Area, and the side length of the triangle transparent area is 1 μm to 3 μm；
The hole wall of 6th via hole is from the position far from the 6th via hole to the position close to the 6th via hole
Direction on the slope that is highly gradually reduced；The gradient on the slope is 45 °~70 °, i.e., the hole wall of described 6th via hole and institute
Stating the angle between passivation layer is 45 °~70 °；The width on the slope is 1 μm to 3 μm.
The thickness of the passivation layer, etching barrier layer and gate insulating layer is respectivelyDescribed first
Flatness layer with a thickness of 2 μm to 3 μm.
The present invention also provides a kind of AMOLED transparent displays, including underlay substrate, the grid on the underlay substrate
Pole, the gate insulating layer on the grid and underlay substrate, the active layer on the gate insulating layer, be set to it is described
Etching barrier layer on active layer and gate insulating layer on the etching barrier layer and corresponds respectively to the active layer two
The first through hole at end and the second through-hole, be set on the etching barrier layer and respectively via the first through hole and the second through-hole with
Source electrode and drain electrode that the active layer is in contact, is set to institute at the passivation layer on the source electrode, drain electrode and etching barrier layer
It states the first flatness layer on passivation layer, on first flatness layer and passivation layer and correspond to third above the drain electrode
Through-hole, on first flatness layer and via the third through-hole and the anode being in contact that drains, be set to described the
The second flatness layer on one flatness layer, on second flatness layer and correspond to above the anode fourth hole, set
In the OLED luminescent layer on the anode, several supporters on second flatness layer, be set to second flatness layer,
Fifth hole on first flatness layer, passivation layer, etching barrier layer and gate insulating layer and be set to several supporters,
Cathode on second flatness layer, OLED luminescent layer and underlay substrate；
The fifth hole includes the multiple via holes for being correspondingly arranged and being mutually communicated up and down, and the multiple via hole includes being located at
The second via hole on the gate insulating layer, the third via hole on the etching barrier layer, on the passivation layer
4th via hole, the 6th via hole on first flatness layer and the 7th via hole on second flatness layer；
In first flatness layer, passivation layer, etching barrier layer and gate insulating layer, the thickness of first flatness layer is most
Greatly；
The hole wall of 6th via hole is equipped with spaced several grooves and between several groove
Several lug bosses；Alternatively, the hole wall of the 6th via hole is from the position far from the 6th via hole to close to the 6th mistake
The slope being highly gradually reduced on the direction of the position in hole.
The third through-hole includes the first via hole on the passivation layer and corresponded to above the drain electrode and sets
In the 5th via hole for being correspondingly arranged and being mutually communicated up and down with first via hole on first flatness layer；
The thickness of the passivation layer, etching barrier layer and gate insulating layer is respectivelyDescribed first
Flatness layer with a thickness of 2 μm to 3 μm.
The slot bottom of the groove is 3 μm to 5 μm relative to the depression in the surface depth of the lug boss.
The gradient on the slope is 45 °~70 °, i.e., the angle between the hole wall and the passivation layer of described 6th via hole is
45 °~70 °；The width on the slope is 1 μm to 3 μm.
The anode is reflecting electrode, and the cathode is semitransparent electrode；The anode includes two transparent conductive metal oxygen
Compound layer and the metal layer being located between two transparent conductive metal oxide skin(coating)s；The material of the cathode is metal.
Beneficial effects of the present invention: a kind of production method of AMOLED transparent display provided by the invention, by using
One special light shield prepares the 6th via hole on the first flatness layer, so that the hole wall of the 6th via hole has a plurality of groove or is in
Ramped shaped to reduce the residual quantity of the anode material on the hole wall of the 6th via hole, and then reduces and constitutes the AMOLED
The residual quantity of anode material in the fifth hole of the clear subpixel of transparent display promotes the aobvious of AMOLED transparent display
Show performance.A kind of AMOLED transparent display provided by the invention, by setting the hole wall of the 6th via hole on the first flatness layer
It is set to a plurality of groove or in ramped shaped, and then reduces the of the clear subpixel for constituting the AMOLED transparent display
The residual quantity of anode material in five through-holes has to reduce the residual quantity of the anode material on the hole wall of the 6th via hole
There is preferable display performance.
For further understanding of the features and technical contents of the present invention, it please refers to below in connection with of the invention detailed
Illustrate and attached drawing, however, the drawings only provide reference and explanation, is not intended to limit the present invention.
Detailed description of the invention
With reference to the accompanying drawing, by the way that detailed description of specific embodiments of the present invention, technical solution of the present invention will be made
And other beneficial effects are apparent.
In attached drawing,
Fig. 1 is the pixel design diagram of existing AMOLED transparent display；
Fig. 2 is the schematic cross-sectional view of existing AMOLED transparent display；
Fig. 3 is the flow chart of the production method of AMOLED transparent display of the invention；
Fig. 4 is the schematic diagram of the step 1 of the production method of AMOLED transparent display of the invention；
Fig. 5 A and Fig. 5 B is respectively the first light that the step 2 of the production method of AMOLED transparent display of the invention provides
The structural schematic diagram of two embodiments of cover；
Fig. 5 C and Fig. 5 E is respectively after using the first light shield of Fig. 5 A and Fig. 5 B to be exposed development to the first flatness layer
Schematic diagram；
Fig. 5 D is the schematic top plan view of the 6th via hole on the first flatness layer in Fig. 5 C；
Fig. 6 A and Fig. 6 B is showing for the first embodiment of the step 3 of the production method of AMOLED transparent display of the invention
It is intended to；
Fig. 6 C and Fig. 6 D is showing for the second embodiment of the step 3 of the production method of AMOLED transparent display of the invention
It is intended to；
Fig. 7 A and Fig. 7 B is respectively two embodiments of the step 4 of the production method of AMOLED transparent display of the invention
Schematic diagram；
Fig. 8 A and Fig. 8 B is respectively two embodiments of the step 5 of the production method of AMOLED transparent display of the invention
Schematic diagram and AMOLED transparent display of the invention two embodiments structural schematic diagram.
Specific embodiment
Further to illustrate technological means and its effect adopted by the present invention, below in conjunction with preferred implementation of the invention
Example and its attached drawing are described in detail.
Referring to Fig. 3, including the following steps: present invention firstly provides a kind of production method of AMOLED transparent display
Step 1, as shown in figure 4, provide a underlay substrate 10, sequentially form grid from top to bottom on the underlay substrate 10
Pole 11, gate insulating layer 20, active layer 21, etching barrier layer 30, source electrode 41 and drain electrode 42, passivation layer 50 and first are flat
Layer 60；
In first flatness layer 60, passivation layer 50, etching barrier layer 30 and gate insulating layer 20, first flatness layer
60 thickness is maximum；
The etching barrier layer 30 is equipped with the first through hole 31 for corresponding respectively to 21 both ends of active layer and second and leads to
Hole 32, the source electrode 41 and drain electrode 42 connect via the first through hole 31 and the second through-hole 32 with the active layer 21 respectively
Touching；
The passivation layer 50 is equipped with the first via hole 51 for corresponding to 42 top of drain electrode, on the gate insulating layer 20
Equipped with the second via hole 22, the etching barrier layer 30 is equipped with third via hole 33, and the passivation layer 50 is equipped with the 4th via hole 54,
Second via hole 22, third via hole 33, the 4th about 54 via hole are correspondingly arranged and are mutually communicated.
Specifically, the thickness of the passivation layer 50, etching barrier layer 30 and gate insulating layer 20 is respectively
Specifically, first flatness layer 60 with a thickness of 2 μm to 3 μm, preferably 2.5 μm.
Step 2, as shown in Fig. 5 A or 5B, provide the first light shield 70, first light shield 70 is equipped with several first thoroughly
Light pattern 71 and several second light-transparent patterns 72；First light-transparent pattern 71 includes continuous continual first transparent area 711；
Second light-transparent pattern 72 is including continuous continual second transparent area 721 and along the periphery of second transparent area 721
The several miniature transparent areas 722 for being arranged successively and being connected respectively with second transparent area 721；
As shown in Fig. 5 C or 5E, first flatness layer 60 is exposed using first light shield 70, is developed,
The 5th via hole 65 for corresponding to first light-transparent pattern 71 is formed on first flatness layer 60 and corresponding to described second
6th via hole 66 of light-transparent pattern 72；
5th via hole 65 is correspondingly arranged and is mutually communicated with about 51 first via hole, collectively forms third through-hole
63；
6th via hole 66 with the 4th via hole 54, third via hole 33, the second about 22 via hole is correspondingly arranged and phase
Mutually perforation；
The hole wall of 6th via hole 66 is equipped with spaced several grooves 661 and is located at several grooves
The hole wall of several lug bosses 662 or the 6th via hole 66 between 661 be from far from the 6th via hole 66 position to
The slope being highly gradually reduced on the direction of the position of the 6th via hole 66.
Specifically, Fig. 5 A is the structural schematic diagram of the first embodiment of first light shield 70, as shown in Figure 5A, the number
A miniature transparent area 722 is to be arranged successively along the periphery of second transparent area 721 and spaced several rectangle transparent areas
723。
Specifically, Fig. 5 B is the structural schematic diagram of the second embodiment of first light shield 70, as shown in Figure 5 B, the number
A miniature transparent area 722 is the several triangle transparent areas 725 being arranged successively along the periphery of second transparent area 721, described
Several triangle transparent areas 725 are sequentially connected or are spaced setting.
In the step 2, since second light-transparent pattern 72 has special graphic structure, described in use
After first light shield 70 is exposed, develops to first flatness layer 60, what is formed on first flatness layer 60 corresponds to
The hole wall of 6th via hole 66 of second light-transparent pattern 72 can have the special shape or construction distinguished with common through-hole:
Specifically, as shown in Figure 5A, several miniature transparent areas 722 are spaced several rectangle transparent areas 723,
And the side length of the rectangle transparent area 723 is when being 3 μm to 5 μm, as shown in Fig. 5 C and Fig. 5 D, on the hole wall of the 6th via hole 66
It is formed with the several grooves 661 for corresponding respectively to several rectangle transparent areas 723 and between several grooves 661
Several lug bosses 662.
Specifically, the slot bottom of the groove 661 is 3 μm to 5 μ relative to the depression in the surface depth of the lug boss 662
m。
Specifically, as shown in Figure 5A, several miniature transparent areas 722 are spaced several rectangle transparent areas 723,
And the side length of the rectangle transparent area 723 is located at institute on first light shield 70 when being 1 μm to 3 μm (preferably 2 μm to 3 μm)
The region for stating several miniature transparent areas 722 forms diffraction grating, can disperse to the ultraviolet light of exposure, and since the region exposes
The ultraviolet light quantity that light time passes through itself is less, therefore the overall exposing amount of the partial region is lower, right using the first light shield 70
After first flatness layer 60 is exposed, develops, correspond to as shown in fig. 5e, on first flatness layer 60 described several micro-
The region of type transparent area 722 is formed from the position far from the 6th via hole 66 to the side of the position close to the 6th via hole 66
The slope being highly gradually reduced upwards, which is the hole wall of the 6th via hole 66.
Specifically, the gradient on the slope is 45 °~70 °, i.e., the hole wall and the passivation layer 50 of described 6th via hole 66
Between angle be 45 °~70 °；The width on the slope is 1 μm to 3 μm, preferably 2 μm to 3 μm.
Specifically, as shown in Figure 5 B, several miniature transparent areas 722 are to be sequentially connected or spaced several three
Angular transparent area 725, and when the side length of the triangle transparent area 725 is 1 μm to 3 μm (preferably 2 μm to 3 μm), described the
Diffraction grating is formed positioned at the region of several miniature transparent areas 722 on one light shield 70, the ultraviolet light of exposure can be divided
It dissipates, and since the ultraviolet light quantity itself passed through when the regional exposure is less, the overall exposing amount of the partial region is lower,
After first flatness layer 60 is exposed, is developed using the first light shield 70, as shown in fig. 5e, on first flatness layer 60
Region corresponding to several miniature transparent areas 722 is formed from the position far from the 6th via hole 66 to close to the described 6th
The slope being highly gradually reduced on the direction of the position of via hole 66, the slope are the hole wall of the 6th via hole 66.
Specifically, the gradient on the slope is 45 °~70 °, i.e., the hole wall and the passivation layer 50 of described 6th via hole 66
Between angle be 45 °~70 °；The width on the slope is 1 μm to 3 μm, preferably 2 μm to 3 μm.
Step 3, as shown in Fig. 6 B or 6D, in first flatness layer 60 via the third through-hole 63 and the drain electrode 42
The anode 91 being in contact.
Specifically, as shown in figure 6 a and 6b, or as shown in Fig. 6 C and 6D, the step 3 includes: flat described second
Anode material layer 80 is formed on layer 70, photoresist layer 81 is coated in the anode material layer 80, using the second light shield 82 to the light
Resistance layer 81 is exposed, develops, and is etched to the anode material layer 80, after removing remaining photoresist, obtains being located at described
The anode 91 being in contact in fourth hole 74 and via the third through-hole 63 with the drain electrode 42.
Specifically, forming the anode material layer 80 using sputtering method.
Specifically, the anode 91 is reflecting electrode, the anode 91 includes two transparent conductive metal oxide skin(coating)s and folder
Metal layer between two transparent conductive metal oxide skin(coating)s, it is preferred that the material of the transparent conductive metal oxide skin(coating)
For tin indium oxide (ITO), the material of the reflective metal layer is silver.
Specifically, as shown in Figure 6A, when the 6th via hole 66 hole wall be equipped with spaced several grooves 661 with
It is described in deposition anode material in the step 3 and when several lug bosses 662 between several grooves 661
It is not easy sputtering in several grooves 661 and enters anode material, to causes anode material cannot be in the hole of the 6th via hole 66
Successive sedimentation on wall thereby reduces the gross area of the anode material deposited on the hole wall of the 6th via hole 66, to drop
Residual quantity of the anode material on the hole wall of the 6th via hole 66 after low etch process.
Specifically, as shown in Figure 6 C, when the hole wall of the 6th via hole 66 is from the position far from the 6th via hole 66
When the slope being highly gradually reduced on the direction close to the position of the 6th via hole 66, in the step 3, in deposition anode
Material and after carrying out lithographic process, since the gradient of the hole wall of the 6th via hole 66 is larger, is coated on the 6th mistake
Photoresist layer 81 on anode material on the hole wall in hole 66 can be exposed completely, so that being deposited on the 6th via hole
Anode material on 66 hole wall is now completely etched away, and it is residual on the hole wall of the 6th via hole 66 to avoid anode material
It stays.
Step 4, as shown in Fig. 7 A or 7B, the second flatness layer 70 is formed on first flatness layer 60, described second
The fourth hole 74 for corresponding to 91 top of the anode is formed on flatness layer 70 and corresponding with the 6th about 66 via hole is set
The 7th via hole 77 set and be mutually communicated；
Second via hole 22 successively to connect from top to bottom, third via hole 33, the 4th via hole 54, the 6th via hole 66,
And the 7th via hole 77 collectively form fifth hole 75；
Several supporters 79 are formed on second flatness layer 70.
Specifically, the fourth hole 74 is used to form the light emitting sub-pixel of AMOLED transparent display, the described 5th is logical
Hole 75 is used to form the clear subpixel of AMOLED transparent display.
Specifically, several supporters 79 are organic photoresist, the purposes of several supporters 79 is rear
Support vapor deposition mask plate in the vapor deposition processing procedure of continuous OLED luminescent layer 92 and cathode 93.
Specifically, second flatness layer 70 with a thickness of 2 μm to 3 μm, preferably 2.5 μm.
Specifically, above support 79 with a thickness of 2 μm to 3 μm, preferably 2.5 μm.
Step 5, as shown in Fig. 8 A or Fig. 8 B, on the anode 91 formed OLED luminescent layer 92；
Cathode is formed on second flatness layer 70, several supporters 79, OLED luminescent layer 92 and underlay substrate 10
93。
Specifically, the cathode 93 is semitransparent electrode, the material of the cathode 93 is metal, preferably magnesium silver alloy.
Specifically, the OLED luminescent layer 92 is all made of vapor deposition processing procedure preparation with cathode 93 in the step 5.
Specifically, the cathode 93 coats the fifth hole 75.
The production method of above-mentioned AMOLED transparent display is prepared by using a special light shield on the first flatness layer 60
The 6th via hole 66 so that the hole wall of the 6th via hole 66 has a plurality of groove 661 or is in ramped shaped, to reduce described the
The residual quantity of anode material on the hole wall of six via holes 66, and then reduce the transparent sub- picture for constituting the AMOLED transparent display
The residual quantity of anode material in the fifth hole 75 of element promotes the display performance of AMOLED transparent display.
Fig. 8 A and Fig. 8 B are please referred to, while refering to Fig. 5 D, based on the production method of above-mentioned AMOLED transparent display, this hair
It is bright that a kind of AMOLED transparent display is also provided, including underlay substrate 10, the grid 11 on the underlay substrate 10, it is set to
The grid 11 and the gate insulating layer 20 on underlay substrate 10, are set to the active layer 21 on the gate insulating layer 20
The active layer 21 on gate insulating layer 20 etching barrier layer 30, on the etching barrier layer 30 and correspond respectively to
The first through hole 31 at 21 both ends of active layer and the second through-hole 32 are set on the etching barrier layer 30 and respectively via described
Source electrode 41 that first through hole 31 and the second through-hole 32 are in contact with the active layer 21 and drain electrode 42 are set to the source electrode 41, leakage
Passivation layer 50 on pole 42 and etching barrier layer 30, is set to described first at the first flatness layer 60 on the passivation layer 50
On flatness layer 60 and passivation layer 50 and corresponds to the third through-hole 63 of 42 top of drain electrode, is set on first flatness layer 60
And the anode 91, second on first flatness layer 60 flat being in contact with the drain electrode 42 via the third through-hole 63
Smooth layer 70 on second flatness layer 70 and corresponds to fourth hole 74 above the anode 91, set on the anode
OLED luminescent layer 92 on 91, several supporters 79 on second flatness layer 70, be set to second flatness layer 70,
Fifth hole 75 on first flatness layer 60, passivation layer 50, etching barrier layer 30 and gate insulating layer 20 and it is set to the number
Cathode 93 on a supporter 79, the second flatness layer 70, OLED luminescent layer 92 and underlay substrate 10；
The fifth hole 75 includes the multiple via holes for being correspondingly arranged and being mutually communicated up and down, and the multiple via hole includes position
In the second via hole 22 on the gate insulating layer 20, the third via hole 33 on the etching barrier layer 30, positioned at described
The 4th via hole 54 on passivation layer 50, the 6th via hole 66 on first flatness layer 60 and it is located at described second flat
The 7th via hole 77 on smooth layer 70；
In first flatness layer 60, passivation layer 50, etching barrier layer 30 and gate insulating layer 20, first flatness layer
60 thickness is maximum；
As shown in Fig. 8 A and Fig. 5 D, the hole wall of the 6th via hole 66 be equipped with spaced several grooves 661 and
Several lug bosses 662 between several grooves 661；Alternatively, as shown in Figure 8 B, the hole wall of the 6th via hole 66 is
It is highly gradually reduced from the position far from the 6th via hole 66 on the direction close to the position of the 6th via hole 66 oblique
Slope.
Specifically, the third through-hole 63 includes on the passivation layer 50 and corresponding to the of 42 top of drain electrode
One via hole 51 and be correspondingly arranged and be mutually communicated with about 51 first via hole on first flatness layer 60
Five via holes 65.
Specifically, due to being equipped with OLED luminescent layer 92 in the fourth hole 74, so that it is transparent aobvious to constitute the AMOLED
Show the light emitting sub-pixel of device；Not set OLED luminescent layer 92 in the fifth hole 75, so that it is transparent aobvious to constitute the AMOLED
Show the clear subpixel of device.
Specifically, the thickness of the passivation layer 50, etching barrier layer 30 and gate insulating layer 20 is respectively
Specifically, first flatness layer 60 with a thickness of 2 μm to 3 μm, preferably 2.5 μm.
Specifically, second flatness layer 70 with a thickness of 2 μm to 3 μm, preferably 2.5 μm.
Specifically, above support 79 with a thickness of 2 μm to 3 μm, preferably 2.5 μm.
Specifically, when the hole wall of the 6th via hole 66 is equipped with spaced several grooves 661 and is located at described
When several lug bosses 662 between several grooves 661, the surface of the slot bottom of the groove 661 relative to the lug boss 662
Cup depth is 3 μm to 5 μm.
Specifically, when the hole wall of the 6th via hole 66 is from the position far from the 6th via hole 66 to close to described the
When the slope being highly gradually reduced on the direction of the position of six via holes 66, the gradient on the slope is 45 °~70 °, i.e., described the
Angle between the hole wall and the passivation layer 50 of six via holes 66 is 45 °~70 °；The width on the slope is 1 μm to 3 μm, excellent
It is selected as 2 μm to 3 μm.By setting slope for the hole wall of the 6th via hole 66, the present invention can also improve the AMOLED
The aperture opening ratio of the clear subpixel of transparent display.
Specifically, the anode 91 is reflecting electrode, the cathode 93 is semitransparent electrode, so that the AMOLED
Transparent display forms a top-illuminating OLED display.
Specifically, the anode 91 includes that two transparent conductive metal oxide skin(coating)s are aoxidized with two transparent conductive metals are located in
Metal layer between nitride layer, it is preferred that the material of the transparent conductive metal oxide skin(coating) is tin indium oxide (ITO), the gold
The material for belonging to layer is silver.
Specifically, the material of the cathode 93 is metal, preferably magnesium silver alloy.
Specifically, the cathode 93 coats the fifth hole 75.
Above-mentioned AMOLED transparent display, by the way that the hole wall of the 6th via hole 66 on the first flatness layer 60 to be set as having
A plurality of groove 661 is in ramped shaped, to reduce the residual quantity of the anode material on the hole wall of the 6th via hole 66, in turn
The residual quantity for reducing the anode material in the fifth hole 75 for constituting the clear subpixel of the AMOLED transparent display, has
Preferable display performance.
In conclusion the present invention provides a kind of AMOLED transparent display and preparation method thereof.AMOLED of the invention is saturating
The production method of bright display prepares the 6th mistake of the clear subpixel on the first flatness layer by using a special light shield
Hole, so that the hole wall of the 6th via hole has a plurality of groove or is in ramped shaped, to reduce on the hole wall of the 6th via hole
Anode material residual quantity, and then reduce in the fifth hole for constituting the clear subpixel of the AMOLED transparent display
The residual quantity of anode material promotes the display performance of AMOLED transparent display.AMOLED transparent display of the invention, passes through
Set having a plurality of groove for the hole wall of the 6th via hole on the first flatness layer or in ramped shaped, to reduce the described 6th
The residual quantity of anode material on the hole wall of via hole, and then reduce the clear subpixel for constituting the AMOLED transparent display
The residual quantity of anode material in fifth hole has preferable display performance.
The above for those of ordinary skill in the art can according to the technique and scheme of the present invention and technology
Other various corresponding changes and modifications are made in design, and all these change and modification all should belong to the claims in the present invention
Protection scope.
Claims (10)
1. a kind of production method of AMOLED transparent display, which comprises the steps of:
Step 1 provides a underlay substrate (10), sequentially forms grid (11), grid from top to bottom on the underlay substrate (10)
Pole insulating layer (20), active layer (21), etching barrier layer (30), source electrode (41) and drain electrode (42), passivation layer (50) and first
Flatness layer (60)；
In first flatness layer (60), passivation layer (50), etching barrier layer (30) and gate insulating layer (20), described first is flat
The thickness of smooth layer (60) is maximum；
The etching barrier layer (30) is equipped with the first through hole (31) and second for corresponding respectively to the active layer (21) both ends
Through-hole (32), the source electrode (41) and drain electrode (42) have via the first through hole (31) and the second through-hole (32) with described respectively
Active layer (21) is in contact；
The passivation layer (50) is equipped with the first via hole (51) corresponded to above the drain electrode (42), the gate insulating layer
(20) the second via hole (22) are equipped with, the etching barrier layer (30) is equipped with third via hole (33), on the passivation layer (50)
Equipped with the 4th via hole (54), second via hole (22), third via hole (33), the 4th via hole (54) are correspondingly arranged and mutually up and down
Perforation；
Step 2 provides the first light shield (70), and first light shield (70) is equipped with several first light-transparent patterns (71) and several the
Two light-transparent patterns (72)；First light-transparent pattern (71) includes continuous continual first transparent area (711)；Described second thoroughly
Light pattern (72) include continuous continual second transparent area (721) and along the periphery of second transparent area (721) successively
Arrangement and the several miniature transparent areas (722) being connected respectively with second transparent area (721)；
First flatness layer (60) is exposed using first light shield (70), is developed, in first flatness layer
(60) the 5th via hole (65) for corresponding to first light-transparent pattern (71) is formed on and corresponds to second light-transparent pattern
(72) the 6th via hole (66)；
5th via hole (65) is correspondingly arranged and is mutually communicated up and down with first via hole (51), collectively forms third through-hole
(63)；
6th via hole (66) is correspondingly arranged up and down with the 4th via hole (54), third via hole (33), the second via hole (22)
And it is mutually communicated；
It is formed with spaced several grooves (661) on the hole wall of 6th via hole (66) and is located at several grooves
(661) hole wall of several lug bosses (662) or the 6th via hole (66) between is from far from the 6th via hole (66)
Position on the direction close to the position of the 6th via hole (66) slope that is highly gradually reduced；
Step 3 is formed on first flatness layer (60) and is in contact via the third through-hole (63) with the drain electrode (42)
Anode (91)；
Step 4 forms the second flatness layer (70) on first flatness layer (60), is formed on second flatness layer (70)
It is correspondingly arranged and mutually up and down corresponding to the fourth hole (74) above the anode (91) and with the 6th via hole (66)
7th via hole (77) of perforation；Second via hole (22) successively to connect from top to bottom, third via hole (33), the 4th via hole
(54), the 6th via hole (66) and the 7th via hole (77) collectively form fifth hole (75)；
Several supporters (79) are formed on second flatness layer (70)；
Step 5 forms OLED luminescent layer (92) on the anode (91)；
Yin is formed on second flatness layer (70), several supporters (79), OLED luminescent layer (92) and underlay substrate (10)
Pole (93).
2. the production method of AMOLED transparent display as described in claim 1, which is characterized in that described in the step 2
Several miniature transparent areas (722) are spaced several rectangle transparent areas (723), and the side of the rectangle transparent area (723)
A length of 3 μm to 5 μm；
The several grooves for corresponding respectively to several rectangle transparent areas (723) are formed on the hole wall of 6th via hole (66)
(661) and several lug bosses (662) between several grooves (661)；The slot bottom of the groove (661) relative to
The depression in the surface depth of the lug boss (662) is 3 μm to 5 μm.
3. the production method of AMOLED transparent display as described in claim 1, which is characterized in that described in the step 2
Several miniature transparent areas (722) are spaced several rectangle transparent areas (723), and the side of the rectangle transparent area (723)
A length of 1 μm to 3 μm；
The hole wall of 6th via hole (66) is from the position far from the 6th via hole (66) to close to the 6th via hole
(66) slope being highly gradually reduced on the direction of position；The gradient on the slope is 45 °~70 °, i.e., described 6th via hole
(66) the angle between hole wall and the passivation layer (50) is 45 °~70 °；The width on the slope is 1 μm to 3 μm.
4. the production method of AMOLED transparent display as described in claim 1, which is characterized in that described in the step 2
Several miniature transparent areas (722) are to be sequentially connected or spaced several triangle transparent areas (725), and the triangle
The side length of transparent area (725) is 1 μm to 3 μm；
The hole wall of 6th via hole (66) is from the position far from the 6th via hole (66) to close to the 6th via hole
(66) slope being highly gradually reduced on the direction of position；The gradient on the slope is 45 °~70 °, i.e., described 6th via hole
(66) the angle between hole wall and the passivation layer (50) is 45 °~70 °；The width on the slope is 1 μm to 3 μm.
5. the production method of AMOLED transparent display as described in claim 1, which is characterized in that the passivation layer (50),
The thickness of etching barrier layer (30) and gate insulating layer (20) is respectivelyFirst flatness layer (60)
With a thickness of 2 μm to 3 μm.
6. a kind of AMOLED transparent display, which is characterized in that including underlay substrate (10), be set on the underlay substrate (10)
Grid (11), be set on the grid (11) and underlay substrate (10) gate insulating layer (20), be set to the gate insulator
Layer (20) on active layer (21), be set to the active layer (21) on gate insulating layer (20) etching barrier layer (30), set
In on the etching barrier layer (30) and correspond respectively to the active layer (21) both ends first through hole (31) and the second through-hole
(32), it is set on the etching barrier layer (30) and has respectively via the first through hole (31) and the second through-hole (32) with described
The source electrode (41) and drain (42), be set to the source electrode (41), drain electrode (42) and etching barrier layer (30) that active layer (21) is in contact
On passivation layer (50), be set to the passivation layer (50) on the first flatness layer (60), be set to first flatness layer (60) with
On passivation layer (50) and correspond to it is described drain electrode (42) above third through-hole (63), be set to first flatness layer (60) on and
Via the third through-hole (63) with it is described drain electrode (42) be in contact anode (91), be set to first flatness layer (60) on
Second flatness layer (70) is set on second flatness layer (70) and corresponds to the fourth hole above the anode (91)
(74), the several supporters for being set to the OLED luminescent layer (92) on the anode (91), being set on second flatness layer (70)
(79), it is exhausted that second flatness layer (70), the first flatness layer (60), passivation layer (50), etching barrier layer (30) and grid are set to
Fifth hole (75) in edge layer (20) and it is set to several supporters (79), the second flatness layer (70), OLED luminescent layer
(92) cathode (93) and on underlay substrate (10)；
The fifth hole (75) includes the multiple via holes for being correspondingly arranged and being mutually communicated up and down, and the multiple via hole includes being located at
The second via hole (22) on the gate insulating layer (20), the third via hole (33) on the etching barrier layer (30), position
In on the passivation layer (50) the 4th via hole (54), be located at first flatness layer (60) on the 6th via hole (66) and
The 7th via hole (77) on second flatness layer (70)；
In first flatness layer (60), passivation layer (50), etching barrier layer (30) and gate insulating layer (20), described first is flat
The thickness of smooth layer (60) is maximum；
The hole wall of 6th via hole (66) is equipped with spaced several grooves (661) and is located at several grooves
(661) several lug bosses (662) between；Alternatively, the hole wall of the 6th via hole (66) is from far from the 6th via hole
(66) slope that position is highly gradually reduced on the direction close to the position of the 6th via hole (66).
7. AMOLED transparent display as claimed in claim 6, which is characterized in that the third through-hole (63) includes being set to institute
State on passivation layer (50) and correspond to the first via hole (51) above the drain electrode (42) and set on first flatness layer
(60) the 5th via hole (65) for being correspondingly arranged and being mutually communicated up and down with first via hole (51) on；
The thickness of the passivation layer (50), etching barrier layer (30) and gate insulating layer (20) is respectivelyInstitute
State the first flatness layer (60) with a thickness of 2 μm to 3 μm.
8. AMOLED transparent display as claimed in claim 6, which is characterized in that the slot bottom of the groove (661) relative to
The depression in the surface depth of the lug boss (662) is 3 μm to 5 μm.
9. AMOLED transparent display as claimed in claim 6, which is characterized in that the gradient on the slope is 45 °~70 °,
Angle between the hole wall and the passivation layer (50) of i.e. described 6th via hole (66) is 45 °~70 °；The width on the slope is
1 μm to 3 μm.
10. AMOLED transparent display as claimed in claim 6, which is characterized in that the anode (91) is reflecting electrode, institute
Stating cathode (93) is semitransparent electrode；The anode (91) includes two transparent conductive metal oxide skin(coating)s and be located in two and transparent lead
Metal layer between metal oxide layer；The material of the cathode (93) is metal.
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| CN110767681B (en) * | 2018-10-31 | 2022-12-13 | 昆山国显光电有限公司 | Display screen and display terminal |
| CN110473897B (en) * | 2019-06-28 | 2024-02-27 | 福建华佳彩有限公司 | Embedded OLED display panel and manufacturing method thereof |
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| CN111900128B (en) * | 2020-09-30 | 2020-12-25 | 晶芯成(北京)科技有限公司 | Forming method of metal interconnection structure |
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