CN106715753B

CN106715753B - Atmospheric pressure epitaxial deposition chamber

Info

Publication number: CN106715753B
Application number: CN201580047552.0A
Authority: CN
Inventors: 刘树坤; 穆罕默德·图格鲁利·萨米尔; 尼欧·谬; 亚伦·米勒; 阿伦·缪尔·亨特; 埃罗尔·安东尼奥·C·桑切斯; 保罗·布里尔哈特; 约瑟夫·M·拉内什; 卡尔蒂克·萨哈; 丹尼斯·L·德玛斯; 萨瑟施·库珀奥
Original assignee: Applied Materials Inc
Current assignee: Applied Materials Inc
Priority date: 2014-09-05
Filing date: 2015-09-02
Publication date: 2020-03-17
Anticipated expiration: 2035-09-02
Also published as: WO2016036868A1; TW201617488A; TWI673396B; CN106715753A; SG10201901906YA; SG11201701463XA; KR20170048578A

Abstract

Embodiments described herein disclose epitaxial deposition chambers and components thereof. In one embodiment, a chamber may include a substrate support positioned in a processing region, a radiant energy assembly including a plurality of radiant energy sources, a liner assembly having an upper liner and a lower liner, and a dome assembly positioned between the substrate support and the radiant energy assembly. The epitaxial deposition chambers described herein allow for processing of larger substrates while maintaining throughput, reducing cost, and providing reliable and uniform deposition products.

Description

Atmospheric pressure epitaxial deposition chamber

Technical Field

Embodiments of the present disclosure generally relate to epitaxial deposition chambers used in semiconductor manufacturing processes.

Background

Modern processes for manufacturing semiconductor devices require precise adjustment of many process parameters to achieve high levels of device performance, product yield, and overall product quality. For processes that include the step of forming a semiconductor layer on a substrate with epitaxial ("EPI") film growth, a number of process parameters must be carefully controlled, including substrate temperature, precursor material flow rates and pressures, formation time, and power distribution among heating elements surrounding the substrate, among other process parameters.

There is a continuing need for increasing device throughput per substrate and device count. Using a larger surface area substrate for device formation increases the number of devices per substrate. However, increasing the surface area of the substrate creates a number of process parameter problems. For example, merely enlarging the chamber components to accommodate larger substrate sizes has been found to be insufficient to achieve the desired results.

Accordingly, there is a need for an improved EPI processing chamber that provides uniform deposition of semiconductor layers on substrates having a larger available surface area.

Disclosure of Invention

Embodiments described herein relate to epitaxial deposition chambers and components thereof. In one embodiment, the chamber may comprise: a substrate support positioned in the processing region; a radiant energy assembly comprising a plurality of radiant energy sources; a pad assembly having an upper pad and a lower pad; an arch assembly positioned between the substrate support and the radiant energy assembly, the arch assembly including an upper arch and a lower arch, the upper dome includes a convex central window portion and a peripheral flange, the central window portion having a width, a window curvature, the window curvature is defined by a ratio of a radius of curvature to the width, the ratio being at least 10:1, the peripheral flange having a planar upper surface, a planar lower surface, and an angled flange surface, the peripheral flange joins the central window portion at its periphery (circumference), the beveled flange surface having a first surface with a first angle, the first angle being less than 35 degrees as measured from the planar upper surface, the dome assembly and the liner assembly forming a boundary of the processing region; and an inject insert fluidly connected to the liner assembly.

In another embodiment, the chamber may comprise: a substrate support having an outer peripheral edge that defines a boundary of a pocket (pocket), wherein the pocket has a concave surface that is recessed from the outer peripheral edge, and an angled support surface disposed between the outer peripheral edge and the pocket, wherein the angled support surface is inclined relative to a horizontal surface of the outer peripheral edge; and an dome assembly positioned between the substrate support and the radiant energy assembly, the dome assembly comprising an upper dome and a lower dome, the upper dome comprising a convex central window portion and a peripheral flange, the central window portion having a width, a height, and a window curvature, the window curvature defined by a ratio of the width to the height, the ratio being at least 10:1, the peripheral flange having a planar upper surface, a planar lower surface, and an angled flange surface, the peripheral flange engaging the central window portion at a periphery of the central window portion, the angled flange surface having a first surface, the first surface forming a first angle with the planar upper surface, the first angle being less than 35 degrees.

In another embodiment, the chamber may include a liner assembly and an inject insert. The cushion assembly includes: a cylindrical body having an outer surface with an outer perimeter smaller than a perimeter of the semiconductor processing chamber and an inner surface forming a wall of a processing volume; and a plurality of gas passages formed by connecting the cylindrical bodies; an exhaust port positioned opposite the plurality of gas channels; a cross-flow port positioned non-parallel to the discharge port; and a thermal sensing port positioned separate from the cross-flow port. The inject insert fluidly connected to the liner assembly, the inject insert comprising: a one-piece body having an inner connecting surface for connection with the liner assembly and an outer surface for connection with a gas delivery device; a plurality of injection ports formed through the single piece body, each injection port forming an opening in the inner connecting surface and the outer surface, the plurality of injection ports creating at least a first section having a first number of the plurality of injection ports, a second section having a second number of the plurality of injection ports different from the first number of injection ports, and a third section having a third number of the plurality of injection ports different from the first number of injection ports and the second number of injection ports; and a plurality of injection inlets, each of the plurality of injection inlets being connected to at least one of the plurality of injection ports.

Drawings

A more particular description of the disclosure briefly summarized above may be had by reference to embodiments, some of which are illustrated in the appended drawings, so that the above-described features of the disclosure can be understood in detail. It is to be noted, however, that the appended drawings illustrate only typical embodiments of this disclosure and are therefore not to be considered limiting of its scope, for the disclosure may admit to other equally effective embodiments.

Fig. 1 shows a schematic cross-sectional view of an epitaxial deposition chamber in accordance with an embodiment of the present disclosure.

FIG. 2 illustrates a schematic cross-sectional view of a backside heat treatment chamber having a liner assembly, in accordance with another embodiment.

FIG. 3A illustrates a top view of a top pad, according to embodiments described herein.

FIG. 3B shows a side view of the upper liner according to the embodiment of FIG. 3A.

Fig. 4A and 4B illustrate top and side views of a lower liner, according to one embodiment.

FIG. 5 is a top view of a lower liner, according to another embodiment.

FIG. 6A shows a schematic view of an inject insert according to one embodiment.

Figure 6B is a side view of an inject insert according to one embodiment.

FIG. 7 is a cross-sectional top view of an injector insert and gas line combination according to one embodiment.

Fig. 8 is a side view of a multilayer inject insert according to one embodiment.

Figure 9 is a schematic isometric view of a substrate support according to one embodiment.

Figure 10 is a cross-sectional view of the substrate support of figure 9.

Fig. 11 is an enlarged cross-sectional view of the substrate support of fig. 10.

FIG. 12 is a schematic isometric view of a preheat ring in accordance with one embodiment of the present disclosure.

Fig. 13 is a cross-sectional view of the preheat ring of fig. 12.

Fig. 14 is an enlarged sectional view of the preheating ring of fig. 13.

FIG. 15A illustrates a schematic view of an upper dome according to one embodiment.

Fig. 15B is a side view of an upper dome according to one embodiment.

FIG. 15C depicts a close-up view of the connection between the peripheral flange and the central window portion, according to one embodiment.

To facilitate understanding, identical reference numerals have been used, where possible, to designate identical elements that are common to the figures. The figures are not drawn to scale and may be simplified for clarity. It is contemplated that elements and features of one embodiment may be beneficially incorporated in other embodiments without further recitation.

Detailed Description

In the following description, for purposes of explanation, numerous specific details are set forth in order to provide a thorough understanding of the present disclosure. In some instances, well-known structures and devices are shown in block diagram form, rather than in detail, in order to avoid obscuring the present disclosure. These embodiments are described in sufficient detail to enable those skilled in the art to practice the disclosure, and it is to be understood that other embodiments may be utilized and that logical, mechanical, electrical and other changes may be made without departing from the scope of the present disclosure.

Embodiments of the present disclosure generally describe atmospheric (atmospheric) epitaxial deposition chambers and components thereof. Exemplary components disclosed herein include, but are not limited to, a heat source including a lamp module and a reflector, a dome assembly including an upper dome and a lower dome, a liner, an inject insert, a substrate support, and a preheat ring.

The atmospheric deposition chamber described herein may include one or more of the following embodiments. In one example, an atmospheric deposition chamber includes a heat source including a lamp module and a reflector described below and a dome assembly including an upper dome and a lower dome. In another example, an atmospheric deposition chamber includes a liner, an inject insert, a substrate support, and a preheat ring as described below. The benefits described with reference to fig. 1-15C may be incorporated into an atmospheric epitaxial deposition chamber by partially or fully incorporating one or more of the various described embodiments. Various implementations of the present disclosure are discussed in more detail below.

Fig. 1 shows a schematic cross-sectional view of an epitaxial deposition chamber 100 in accordance with an embodiment of the present disclosure. Although an epitaxial deposition chamber is illustrated, other chambers, such as chemical vapor deposition chambers or rapid thermal processing chambers, may also benefit from embodiments of the present disclosure. A substrate 103 (which may be a thin silicon wafer having a diameter of 200mm, 300mm, or 450mm, for example) is supported on a substrate support 105 mounted within a chamber within the chamber 100. The substrate support 105 may be fabricated, for example, from graphite, silicon carbide, or graphite coated with silicon carbide, and is in the form of a thin disk having a relatively low thermal mass. The substrate support 105 may have a diameter greater than a diameter of a substrate to be processed. Thus, for a 450mm substrate, the substrate support 105 may have a diameter greater than or equal to about 450 mm. Representative diameters may be between 460mm and 550 mm.

For purposes of further describing the radiation pattern generated within the chamber 100, the substrate support 105 is divided into three regions, namely: a central region 20, a peripheral region 40, and a mid-radius region 30. These regions are concentric and symmetric about the axis of symmetry 115. The central region 20 depicts a circular region of the centermost portion of the substrate support 105. The peripheral region 40 depicts an annular region along the outer edge of the substrate support 105. The medium radius region 30 describes an annular region approximately midway between the center and the edge of the substrate support 105, which is bounded by the outermost boundary of the central region 20 and the innermost boundary of the peripheral region 40. Although described in relation to the substrate support 105, the central region 20, the intermediate radius region 30, and the peripheral region 40 may be adapted for a substrate 103 disposed on the substrate support 105, for example, during processing operations within the chamber 100.

An upper window 107 made of a transparent material, such as quartz, for example, encloses the top surfaces of the substrate 103 and the substrate support 105, while a lower window 109 encloses the bottom surface thereof. A base plate 111, shown in simplified schematic form, is used to join the upper window 107 and the lower window 109 to form a hermetic joint.

In operation, process and cleaning/purge gases are supplied to the chamber 100 through ports formed in the base plate 111. The gas enters the chamber 100 through an inlet port on one side of the chamber 100, flows through the substrate support 105 and the substrate 103 in a substantially laminar flow, and then exits through an exhaust port opposite the inlet port.

A support shaft 117 extends upwardly along the shaft 115 within the neck 113 of the lower window 109, the support shaft 117 being attached to and supporting the substrate support 105. The shaft 117 and the substrate support 105 may be rotated by a motor (not shown) during processing operations.

The reactor heater system of the chamber 100 includes a lower heat source 119 and an upper heat source 121. Upper 121 and lower 119 heat sources are disposed near the upper window 107 and lower window 109 covers, respectively, for the purpose of heating the substrate 103 and substrate support 105 during processing operations performed within the chamber 100. The lower heat source 119 includes an inner array 160 of radiant lamps 127, an outer array 180 of radiant lamps 127, and a middle array 170 of radiant lamps 127 disposed between the inner array 160 and the outer array 180. The radiant lamps 127 may be, for example, 2kW tungsten filament infrared bulbs approximately four inches long and having a diameter of approximately 1.25 inches. Alternatively, the radiant lamps 127 may be any suitable heating element capable of heating the substrate 103 to a temperature in the range of about 200 degrees Celsius to about 1600 degrees Celsius. Electrical interfacing of the radiation lamp 127 is provided by the slot 129. For a representative 450mm substrate, the number of radiation lamps 127 used in the inner array 160 in the chamber 100 of fig. 1 may be about 8 to about 16 (e.g., 12), the number of radiation lamps 127 of the middle array 170 may be about 24 to about 40 (e.g., about 32), and the number of radiation lamps 127 of the outer array 180 may be about 32 to about 52 (e.g., about 44). The inner array 160, the middle array 170, and the outer array 180 present a concentric, annular arrangement, and each has equally spaced radiation lamps around the periphery of the chamber 100.

Lower heat source 119 also includes a plurality of reflectors (such as outer reflector 145) that provide mechanical attachment of radiant lamps 127 and reflective surface 147 to enhance the directionality of the radiation produced by radiant lamps 127 within outer array 180. The reflector may be adapted for the upper heat source 121. For the chamber 100 of FIG. 1, the outer reflector 145 may be about 4.5 inches to about 7.2 inches in height and formed of a rigid, heat resistant material such as aluminum, stainless steel, or brass. Furthermore, the reflective surface of the outer reflector 145 may be coated with a material having good reflective qualities for radiation, such as gold or copper.

The inner array 160 has a smaller diameter than the outer array 180. The inner array 160 surrounds a central portion of the substrate support 105 or substrate 103. The outer array 180 surrounds the periphery of the substrate support 105 and the substrate 103 and as such has a diameter that is about as large as or greater than the diameter of both the substrate 103 and the support 105. The middle array 170 surrounds the perimeter of the inner array 160 and has a smaller diameter than the outer array 180. The inner, middle, and outer arrays of radiant lamps 127 are disposed in a plane that is substantially parallel to the substrate 103 and substrate support 105, but disposed perpendicularly from the substrate 103 and substrate support 105, thereby creating a radiant energy assembly. In a chamber 100 designed to process substrates having a diameter of 450mm, for example, the inner array 160 may be disposed about 15-18 inches from the substrate support 105 and have a diameter between about 220mm and 280 mm. The middle array 170 may be disposed about 12-14 inches from the substrate support 105 and have a diameter between about 300mm and 360 mm. The outer array 180 may be disposed about 8-11 inches from the substrate support 105 and have a diameter between about 380mm and 480 mm. These diameters and distances between the lamp arrays and the substrate support are exemplary and may vary depending on the application.

Exemplary cushion Assembly

The embodiments discussed below describe a liner for use in a semiconductor processing system. The liner contains a cross-flow design comprising at least 6 sections to allow for greater flow zonability (zonality). Further, the temperature sensing device is connected to the pad but used separately from the pad, allowing for easier replacement of the pad, more flexible pads, and reduced cost. Also, positioning the cross-flow ports off-center from the centerline (e.g., a position other than a 0 degree position) allows for increased variability in the spacing between flow sections.

FIG. 2 illustrates a schematic cross-sectional view of a thermal processing chamber 1200 having a liner assembly 1250, according to another embodiment. In one example, this may be a backside heated processing chamber. One example of a process chamber that may be adapted to benefit from the embodiments described herein is an Epi process chamber, which is available from applied materials, inc. It is contemplated that other process chambers (including those from other manufacturers) may be suitable for practicing the present embodiments.

The processing chamber 1200 may be used to process one or more substrates, including depositing a material on an upper surface of the substrate 1208. The process chamber 1200 may include a process chamber heating device, such as an array of radiation lamps 1202 for heating (among other elements) the backside 1204 of a substrate support 1206 or the backside of a substrate 1208 disposed within the process chamber 1200. The substrate support 1206 may be a disk-shaped substrate support 1206 as shown, or may be a ring-shaped substrate support (which supports the substrate from the edge of the substrate), or may be a pin-type support (which supports the substrate from the bottom with minimal contact pins or pins).

In this example, the substrate support 1206 is depicted within the processing chamber 1200 between the upper dome 1214 and the lower dome 1212. The upper and lower arcuate structures 1214, 1212, along with the base ring 1218 disposed between the upper and lower arcuate structures 1214, 1212, can define an interior region of the process chamber 1200. The substrate 1208 may be advanced into the processing chamber 1200 through a load port, hidden from view in figure 2 by the substrate support 1206, and disposed on the substrate support 1206.

The base ring 1218 may generally include a loading port, a process gas inlet 1236, and a gas outlet 1242. The base ring 1218 may have a generally elliptical shape with the long side on the load port and the short sides on the process gas inlet 1236 and gas outlet 1242, respectively. The base ring 1218 may have any desired shape so long as the load port, the process gas inlet 1236, and the gas outlet 1242 are angled relative to one another to be removed at about 90 degrees. For example, the loading ports may be located at the side between the process gas inlet 1236 and the gas outlet 1242, with the process gas inlet 1236 and the gas outlet 1242 disposed opposite one another on the base ring 1218. In various embodiments, the load port, the process gas inlet 1236, and the gas outlet 1242 are aligned with one another and disposed at substantially the same level relative to a base plane of the chamber 1200. Words such as "above," "below," "top," "bottom," "up," "down," and the like do not refer to an absolute direction, but rather to a base plane of the chamber 1200.

The term "relative" as used herein is defined in mathematical terms such that a and B are opposed with respect to a reference plane P extending between a and B. "relative" is intended to mean approximate, and thus, it is not necessary that A and B be exactly relative unless explicitly indicated.

The substrate support 1206 is illustrated in a raised processing position, but may be vertically displaced by an actuator (not shown) to a loading position below the processing position to allow the lift pins 1205 to contact the lower dome 1212, extend through holes in the substrate support 1206 and along the central axis 1216, and raise the substrate 1208 from the substrate support 1206. A robot (not shown) may then enter the processing chamber 1200 to engage the substrate 1208 and remove the substrate 1208 from the processing chamber 1200 through the load port. The substrate support 1206 may then be actuated upward to a processing position to place the substrate 1208 (with the device side 1217 of the substrate facing upward) on the front side 1210 of the substrate support 1206.

The substrate support 1206, when in a processing position, divides the interior volume of the processing chamber 1200 into a processing region 1220 above the substrate and a purge gas region 1222 below the substrate support 1206. The substrate support 1206 can be rotated through the central axis 1216 during processing to minimize spatial anomalies in the heat and process gas flows within the processing chamber 1200 and, thus, facilitate uniform processing of the substrate 1208. The substrate support 1206 is supported by a central shaft 1216 that moves the substrate 1208 in an up-and-down direction during loading and unloading (in some examples during processing of the substrate 1208). The substrate support 1206 may be formed of silicon carbide or graphite coated with silicon carbide to absorb radiant energy from the lamps 1202 and direct the radiant energy to the substrate 1208.

Generally, the central window portion of the upper dome 1214 and the bottom of the lower dome 1212 are formed from an optically transparent material, such as quartz. The thickness and curvature of the upper dome 1214 can be configured to manipulate the uniformity of the flow field in the processing chamber.

The lamps 1202 may be disposed about and below the lower dome 1212 in a prescribed manner about the central axis 1216 to independently control the temperature at each region of the substrate 1208 as the process gases pass therethrough, thereby facilitating deposition of material onto the upper surface of the substrate 1208. The lamps 1202 may be used to heat the substrate 1208 to a temperature in a range of about 200 degrees celsius to about 1600 degrees celsius. Although not discussed in detail herein, the deposited material may include silicon, doped silicon, germanium, doped germanium, silicon germanium, doped silicon germanium, gallium arsenide, gallium nitride, or aluminum gallium nitride.

Process gas supplied from a process gas supply 1234 is introduced into the processing region 1220 through a process gas inlet 1236 formed in the sidewall of the base ring 1218. The process gas inlet 1236 is connected to the process gas field by a plurality of gas passages 1254, which gas passages 1254 are formed through the liner assembly 1250. The process gas inlet 1236, the liner assembly 1250, or a combination thereof is configured to direct the process gas in a direction that can be generally radially inward. During the film formation process, the substrate support 1206 is in a processing position, which may be near the process gas inlet 1236 and at about the same elevation as the process gas inlet 1236, allowing process gas to flow upwardly and circumferentially along the flow path 1238 across the upper surface of the substrate 1208. The process gas exits the processing region 1220 through a gas outlet 1242 (along flow path 1240), the gas outlet 1242 being located on the opposite side of the process chamber 1200 from the process gas inlet 1236. Removal of the process gas through the gas outlet 1242 may be facilitated by a vacuum pump 1244 coupled to the gas outlet 1242.

Purge gas supplied from a purge gas source 1224 is introduced to the purge gas region 1222 through a purge gas inlet 1226 formed in the sidewall of the ground ring 1218. A purge gas inlet 1226 connects through the liner assembly 1250 to the process gas region. The purge gas inlet 1226 is disposed at an elevation below the process gas inlet 1236. If a circular shield 1252 is used, the circular shield 1252 may be disposed between the process gas inlet 1236 and the purge gas inlet 1226. In either case, the purge gas inlet 1226 is configured to direct the purge gas in a generally radially inward direction. If desired, the purge gas inlet 1226 may be configured to direct purge gas in an upward direction. During the film formation process, the substrate support 1206 is positioned at a location such that the purge gas flows down and around along a flow path 1228 across the backside 1204 of the substrate support 1206. Without being bound by any particular theory, it is believed that the flow of the purge gas prevents or substantially prevents the flow of the process gas from entering the purge gas region 1222 or reduces the diffusion of the process gas into the purge gas region 1222 (i.e., the region below the substrate support 1206). The purge gas exits the purge gas region 1222 (along flow path 1230) and is exhausted from the process chamber through a gas outlet 1242 located on the opposite side of the process chamber 1200 from the purge gas inlet 1226.

The liner assembly 1250 can be disposed within the inner periphery of the base ring 1218 or surrounded by the inner periphery of the base ring 1218. The liner assembly 1250 may be formed of a quartz material and substantially shields the walls of the processing chamber 1200 from the environment in the processing region 1220 and the purge gas region 1222. The walls, which may be metal, may react with the precursors and cause contamination in the processing volume. An opening may be provided through the liner assembly 1250 and aligned with the load port to allow passage of the substrate 1208. While the pad assembly 1250 is illustrated as a single piece, it is contemplated that the pad assembly 1250 may be formed from multiple pieces. The gasket assembly 1250 shown in fig. 2 is comprised of an upper gasket 200 and a lower gasket 1400, which are described in more detail in fig. 3 and 4.

Fig. 3A illustrates a top view of a top pad 1300, according to embodiments described herein. The topper cushion 1300 includes an upper body 1301, the upper body 1301 having an inner surface 1302 and an outer surface 1304 opposite the inner surface 1302. A plurality of upper inlets 1308 are formed through the outer surface 1304 of the body 1301. Discharge ports 1310 are formed opposite the plurality of upper inlets 1308. Upper cross flow ports 1312 are formed between the plurality of upper inlets 1308 and the discharge ports 1310.

The plurality of upper inlets 1308 may be described as grooves or slots formed in the upper body 1301. As shown here, the plurality of upper inlets 1308 are substantially rectangular and parallel to each other. The plurality of upper inlets 1308 may vary in number, size, and shape based on the needs of the user, fluid dynamics, or other parameters. As shown here, thirteen (13) upper inlets 1308 are formed in the upper body 1301. The plurality of upper inlets 1308 may be configured to create a plurality of flow sections in the processing region 1220.

Fig. 3B illustrates a side view of the top pad 1300 according to the embodiment of fig. 3A. A plurality of upper inlets 1308 deliver a gas stream from a process gas supply 1234 to the processing region 1220. Fig. 3B further illustrates a plurality of upper lobes, such as upper inlet lobes 1320 and exhaust lobes 1322. Upper inlet boss 1320 and exhaust boss 1322 may be accompanied by further bosses formed at any location of the upper liner. Further, upper inlet boss 1320, exhaust boss 1322, or both may be eliminated or replaced by an upper boss at a different location on upper body 1301. The upper inlet boss 1320 and exhaust boss 1322 facilitate connecting the lower gasket 1400 to properly position the upper gasket 1300 (described below).

Fig. 4A and 4B illustrate a bottom pad 1400 according to one embodiment. The lower liner 1400 includes a lower body 1401, the lower body 1401 having an inner surface 1402 and an outer surface 1404. The interior surface 1402, in conjunction with the interior surface 1302, forms a boundary of the process region 1220 and the purge gas region 1222. A plurality of lower inlets 1408 are formed through the outer surface 1404 of the body 1401. Gas supplied from a process gas supply 1234 is introduced into the processing region 1220 through a plurality of lower inlets 1408.

A plurality of lower inlets 1408 are positioned radially through the exterior of the lower body 1401. The lower inlets 1408 may deliver one or more individual (individual) gas streams. As shown here, thirteen (13) lower inlets 1408 are formed in the lower body 1401. However, more or fewer inlets may be used in one or more embodiments. The lower inlet may be positioned and oriented to create a plurality of flow sections. The flow sections are regions of different gas flows delivered through lower inlet 1408 and upper inlet 1308. By creating more sections, the gas delivery over the substrate is more tunable than fewer flow sections.

The plurality of lower inlets 1408 may be configured to provide separate gas flows having different parameters, such as velocity, density, or composition. The plurality of lower inlets 1408 are configured to direct the process gases in a generally radially inward direction, wherein the gases are delivered to a central region of the processing region. Each of the plurality of lower inlets 1408 may be used to adjust one or more parameters of the gas from the process gas supply 1234, such as velocity, density, direction, and location. A plurality of lower inlets 1408 are positioned opposite discharge ports 1410 and at least 25 degrees from cross-flow ports 1412. In one embodiment, the cross-flow port is positioned at a 0 degree position as measured from the bisector 1340. The plurality of lower inlets 1408 may be positioned at 90 degrees measured between the midline 1350 and the bisecting line 1340. The exhaust port 1410 may be positioned at 270 degrees measured between the centerline 1350 and the bisecting line 1340.

Illustrated in fig. 4B is the lower attachment surface 1420 of the lower gasket 1400. Lower attachment surface 1420 provides a receiving surface for upper attachment surface 1324. As such, lower attachment surface 1420 may have grooves, flat areas, or other areas such that lower attachment surface 1420 may properly mate with upper attachment surface 1324. As shown here, inlet slots 1424 are formed through lower connecting surface 1420 at a plurality of lower inlets 1408. Further illustrated is a lower surface 1422 that contacts the chamber and supports the lower liner 1400.

The lower gasket 1400 and the upper gasket 1300 are combined to create the gasket assembly 1250. In one embodiment, upper attachment surface 1324 is positioned in conjunction with lower attachment surface 1420. Upper attachment surface 1324 forms a seal with at least a portion of lower attachment surface 1420. When the upper connecting surface 1324 is placed in connection with the lower connecting surface 1420, the plurality of lower inlets 1408 extend upward to deliver a flow of gas through the plurality of upper inlets 1308 of the upper liner 1300. Thus, the gas flow is redirected to the processing region 1220. Although illustrated as having an equal number of lower inlets 1408 and upper inlets 1308, the number and positioning of the lower inlets 1408 may be different than shown or relatively different from the upper inlets 1308.

Upper cross flow port 1312 combines with lower cross flow port 1412 to create a cross flow port. The cross-flow port can deliver a gas flow that is substantially perpendicular to the gas flow from the plurality of gas passages 1254. The cross-flow ports may be positioned coplanar with the plurality of upper inlets 1308, upper cross-flow ports 1312, lower cross-flow ports 1412, upper exhaust ports 1310, lower cross-flow ports 1412, or a combination thereof. The orientation of the cross-flow port may be substantially perpendicular to the flow from the plurality of gas channels 1254 and intersect the flow from the plurality of gas channels 1254 (e.g., perpendicular in the x and y planes and intersecting in the z plane). In another embodiment, the cross-flow ports are oriented to deliver gas out of the plane of the gas flow from the plurality of gas passages 1254 (e.g., perpendicular in the x and y planes and not intersecting in the z plane).

Heat sensing port 1414 may be positioned in lower body 1401. The heat sensing port 1414 may receive a heat sensing device, such as a thermocouple, for the processing chamber 1200. The thermal sensing port 1414 allows temperature measurements to be taken during processing so that the temperature of the substrate and the deposition from the process gas can be finely tuned. Heat sensing port 1414 may be positioned near lower crossflow port 1412. In one embodiment, heat sensing port 1414 is positioned at a 5 degree position at the outer periphery as measured from bisection line 1440 (shown in FIG. 4B). It is believed that the combination of heat sensing ports 1414 and cross-flow ports 1412 can produce abnormal wear. By separating cross-flow ports 1412 from heat sensing ports 1414, abnormal wear with respect to the combination can be avoided.

During processing, the substrate support 1204 may be disposed in a processing position adjacent to and at about the same height as the plurality of gas channels, allowing gas to flow radially and circumferentially along the flow path across the upper surface of the substrate support. The cross-flow port 1412 delivers a second gas flow that traverses the flow of the plurality of gas channels such that the second gas flow intersects at least one of the flow regions created by the plurality of gas channels. The process gases exit the process region through an exhaust port 1410, the exhaust port 1410 being formed through the body 1401. Removal of the process gas through the exhaust port 1410 may be facilitated by a vacuum pump (not shown) coupled to the exhaust port 1410. Since the plurality of gas channels and exhaust ports 1410 are aligned with each other and disposed at approximately the same height, it is believed that such a parallel arrangement will allow for a substantially planar, uniform gas flow across the substrate. Further, radial uniformity may be provided by rotating the substrate through the substrate support.

FIG. 5 shows a bottom pad 1500 according to another embodiment. The lower gasket 1500 includes a lower body 1501, the lower body 1501 having an inner surface 1502 and an outer surface 1504. As described above, interior surface 1502, in combination with interior surface 1302, forms the boundary of process region 1220 and purge gas region 1222. A plurality of lower inlets 1508 are formed through the outer surface 1504 of the lower body 1501. The lower pad 1500 further includes a discharge port 1510, a lower cross-flow port 1512, and a thermal sensing port 1514. A thermal sensing port 1514 may be positioned adjacent the lower cross flow port 1512.

In this embodiment, the plurality of lower inlets 1508 have two spaced rows. The two separate gas streams (as delivered through the plurality of lower inlets 1508) allow the two separate gas streams to be combined prior to delivery to the processing region 1220. In this embodiment, the first row and the second row feed into the same channel created in conjunction with the upper liner. By combining the two gas flows through the gas passages 1254 of the liner assembly 1250, the gas temperature can be regulated prior to delivery to the process chamber, complex chemical reactions can be initiated and delivered without adversely affecting the substrate, and changes in fluid dynamics in the process chamber can be avoided.

The liner assembly described herein allows for finer control of deposition uniformity for both current substrate sizes (e.g., 300mm diameter) and larger substrate sizes (e.g., 450mm diameter). The flow section allows for finer control of deposition in specific areas of the substrate.

Exemplary inject insert

The embodiments disclosed below describe an inject plug for use in a semiconductor processing system. The inject insert is connected to and joins at least 6 segments. The newly created segments may be single or multi-layered. The segments created by the inject inserts allow for better flow control within the process chamber. By adding flow control, more uniform epitaxial growth can be achieved while reducing process gas waste and reducing production time.

Figures 6A and 6B illustrate a liner assembly 1600 having a inject insert 1620 according to embodiments described herein. Figure 6A illustrates a top view of the inject insert 1620 coupled to the pad assembly 1600. Figure 6B shows a side view of the inject insert 1620. The pad assembly 1600 includes a pad body 1602, the pad body 1602 having an inner surface 1604 and an outer surface 1606. The inner surface 1604 forms a boundary of a treatment area, such as the treatment area 1220 described with reference to fig. 2. A plurality of liner inlets 1608 (depicted as dashed circles) are formed through the inner surface 1604 and the outer surface 1606 of the liner body 1602. The inject insert 1620 (illustrated here as having two inject inserts 1620) is fluidly connected to the plurality of liner inlets 1608. Gases supplied from a gas supply are introduced into the processing region through the inject insert 1620 and then through the plurality of liner inlets 1608, whereby the plurality of liner inlets 1608 are capable of delivering one or more respective gas flows. The inject insert 1620, the plurality of liner inlets 1608, or both may be configured to provide separate gas flows having different parameters, such as velocity, density, or composition. The plurality of liner inlets 1608 are configured to direct the process gases in a generally radially inward direction, wherein the gases are delivered to a central region of the processing region. The inject insert 1620 and each of the plurality of liner inlets 1608 may be used individually or in combination to adjust one or more parameters, such as the velocity, density, direction, and location of gas from a gas supply.

The inject insert 1620 may be formed from a single piece of metal, ceramic, or other inert composition such as aluminum or quartz. The inject insert 1620 may have a substantially planar upper surface 1622 and a substantially planar lower surface 1624. The injection insert 1620 may have a number of injection ports 1626 formed therein. The end of the inject insert 1620 is illustrated here, with the middle portion omitted for simplicity. In this embodiment, the inject insert 1620 is depicted as having seven (7) inject ports 1626. Injection port 1626 may be any shape or size such that flow rate, flow velocity, and other flow parameters may be controlled. In addition, a plurality of injection ports 1626 may be coupled to any number of the plurality of liner inlets 1608. In one embodiment, a single port of the plurality of liner inlets 1608 is supplied by more than one injection port 1626 (serve). In another embodiment, the multiple ports of the multiple liner inlets 1608 are supplied by a single port of the injection port 1626. The inject insert 1620 has a connection surface 1628. The connecting surface 1628 may have a surface curvature such that the injection port 1626 penetrating the injection insert 1620 is fluidly sealed to the plurality of liner inlets 1608. The injection insert 1620 may have an outer surface 1630. The exterior surface 1630 may be configured to connect to one or more gas lines 1701 or other gas delivery devices.

Injection port 1626 and liner inlet 1608 create at least a first section, a second section, and a third section. The first section has a first number of channels. The second section has a second number of channels that is different from the first number of channels. The third section has a third number of channels that is different from the first number of channels and the second number of channels. Larger substrates require tighter control of process parameters due to their increased surface area. Thus, by increasing the number of zones, the area controlled by a single zone is reduced, allowing for finer adjustment of the processing parameters.

FIG. 7 illustrates a cross-sectional top view of an inject insert 1700 according to one embodiment. The inject insert 1700 may have the same or similar construction as the inject insert 1620 described with reference to fig. 6A and 6B. The inject insert 1700 has a plurality of inject ports 1726, such as seven inject ports 1726, formed therein. As shown with respect to the inject insert 1620, the end of the inject insert 1700 is illustrated herein with the middle portion omitted for simplicity. The inject insert 1700 may have one or more multi-connecting gas lines, illustrated here as a first multi-connecting gas line 1702, a second multi-connecting gas line 1704, and a third multi-connecting gas line 1706. The

multi-connection gas lines

1702, 1704, and 1706 connect with more than one multiple injection port 1726 (also referred to as connected ports).

The multiple connecting

gas lines

1702, 1704, 1706 can deliver different gases or deliver gases under different conditions. In one embodiment, a first multi-connecting gas line 1702 delivers a first gas to the connected port, a second multi-connecting gas line 1704 delivers a second gas to the connected port, and a third multi-connecting gas line 1702 delivers a third gas to the connected port. The first gas, the second gas, and the third gas may be different gases from each other. In another embodiment, a first multi-connecting gas line 1702 delivers gas to the connected port at a first pressure and/or a first temperature, a second multi-connecting gas line 1704 delivers gas to the connected port at a second pressure and/or a second temperature, and a third multi-connecting gas line 1702 delivers gas to the connected port at a third pressure and/or a third temperature. The first pressure, the second pressure, and the third pressure may be different pressures from each other. Also, the first temperature, the second temperature, and the third temperature may be different temperatures from each other. Further, any number of injection ports 1726 may be connected to any number of multi-connection gas lines. In further embodiments, one or more gas lines 1701 and/or

multi-connection gas lines

1702, 1704, and 1706 may be connected with the same injection port 1726.

Although one or more of the injection ports 1726 are illustrated as being connected by one or more gas lines 1701 and the

multi-connection gas lines

1702, 1704, and 1706, the injection ports 1726 may be interconnected within the injection insert 1700 such that one or more of the

multi-connection gas lines

1702, 1704, and 1706 is not necessary. In this case, the group of injection ports 1726 can branch inside the injection insert 1700 (shown by branch 1730) such that the group of injection ports 1726 receive gas from the single gas line 1701.

The inject insert 1700 may further include a plurality of inject inlets, illustrated here as inject inlets 1708a-1708 g. Infusion inlets 1708a-1708g may be approximately equally spaced and positioned in infusion insert 1700. The infusion inlets 1708a-1708g may have different widths such that the infusion inlets 1708a-1708g deliver different gas volumes with proportionally varying velocities. When gas is delivered through both injection ports 1726 at standard pressure, an increased width is expected to deliver gas to the processing region at a reduced rate but a higher volume than a standard width. Under the same conditions as described above, it is expected that the reduced width delivers gas to the processing region at an increased rate but a lower volume than the standard width.

As shown here, the injection inlet 1708a has a width 1712a, the width 1712a being increased compared to the width 1712c of the injection port 1726. In addition, the injection inlet 1708a has a gradual increase, creating a tapered appearance. As shown here, the increase in the width 1712a of the injection inlet 1708a results from a gradual increase of 5 degrees from the centerline 1710, as indicated by the dashed line extending outward from the associated injection port 1726. The incremental increase may be more or less than 5 degrees. Further, a gradual increase is not necessary to form the increased width 1712 a. In one embodiment, the width 1712a increases only at a point before the injection inlet 1708a, forming a slightly larger cylinder in the injection port 1726.

While the centerline 1710 is described with reference only to the injection port 1726, it should be understood that all of the bilaterally symmetric articles or formations described herein have a centerline. Further, while the centerline 1710 is illustrated only with respect to the injection inlet 1708a, it should be appreciated that each of the injection inlets 1708a-1708g has an associated centerline 1710, the centerline 1710 bisecting each of the respective injection ports 1726.

In another example, the injection inlet 1708b has a width 1712b, the width 1712b being reduced compared to the width 1712c of the injection port 1726. As described above, the injection inlet 1708b has a gradual decrease, creating an inverted cone-shaped appearance. As shown here, the reduced width 1712b of the injection inlet 1708b is formed by a 5 degree gradual reduction from the centerline 1710, as indicated by the dashed line extending inwardly from the associated injection port 1726. The taper may be more or less than 5 degrees.

Although increased width 1712a, decreased width 1712b, and the associated gradual increases and decreases are illustrated as symmetrical to centerline 1710, this is not intended to be a limitation of the embodiments described herein. The change in size and shape can be produced with complete freedom of positioning and rotation so that the gas can be delivered in any direction and at any angle as desired by the end user. In addition, the liner portal 1608 of FIGS. 6A and 6B may have a design that accommodates (complements) or replicates the design described with reference to the inject portals 1708a-1708 g.

Figure 8 depicts a side view of a multi-layer inject insert 1800 in accordance with one embodiment. The multi-layer inject insert 1800 (illustrated here as having two rows of inject ports 1826) may have more than one row of inject ports 1826 so that the gas is delivered to the processing region more uniformly. As shown with respect to the inject insert 1620, the ends of the inject insert 1800 are illustrated herein with the middle portion omitted for simplicity. The multi-layer inject insert 1800 may have a substantially planar upper surface 1822 and a substantially planar lower surface 1824. The multi-layer inject insert 1800 may have a number of inject ports 1826 per row formed therein. In this embodiment, the multi-layer inject insert 1800 is depicted as having fourteen (14) inject ports 1826. In this embodiment, the number or shape of each of the injection ports 1826 used in each respective row may be different shapes, sizes, and locations.

Further, the plurality of injection ports 1826 may be connected with any number of the plurality of injection inlets. The infusion inlet described with reference to fig. 8 is substantially similar to the infusion inlet 1708 described with reference to fig. 7. The multi-layer inject insert 1800 has a connecting surface 1828. The connecting surface 1828 may have a surface curvature such that the injection ports 1826 penetrating the multi-layer injection insert 1800 are fluidly sealed to the upper liner and the lower liner (described below). The multi-layer injection insert 1800 has an outer surface 1830, and the outer surface 1830 can be configured to be connected to a gas line as described in fig. 7.

Both the chemical reactions and the gas flows need to be tightly controlled for current and next generation semiconductor devices. Using the embodiments described above, control of both the delivery of gas to the injection port and the flow of gas from the injection port through the injection inlet can be increased, resulting in increased control of the process parameters for a large portion of the substrate. Increased control of process parameters, including control of the rate of gas supplied to the chamber and subsequent segment formation, will result in improved epitaxial deposition and reduced product waste, among other benefits.

Exemplary substrate support and preheat Ring

Figure 9 is a schematic isometric view of a substrate support 1900 according to embodiments described herein. The substrate support 1900 includes an outer peripheral edge 1905 that defines the confines of a recessed pocket 1910 at which a substrate may be supported. The substrate support 1900 may be positioned in a semiconductor processing chamber, such as a chemical vapor deposition chamber or an epitaxial deposition chamber. One exemplary processing chamber that may be used to practice embodiments of the present disclosure is illustrated in fig. 1. Recessed pocket 1910 is sized to receive a majority of a substrate. The recessed pocket 1910 can include a surface 2000, the surface 2000 being recessed from the outer peripheral edge 1905. The pocket 1910 thus prevents the substrate from slipping out during processing. The substrate support 1900 may be an annular plate fabricated from a ceramic material or a graphite material, such as graphite that may be coated with silicon carbide. Lift pin holes 1903 are illustrated in the pockets 1910.

Figure 10 is a side cross-sectional view of the substrate support 1900 of figure 9. The substrate support 1900 includes a first dimension D1 measured from an outer diameter of the substrate support 1900. The substrate support 1900 has an outer diameter that is smaller than an inner perimeter of a semiconductor processing chamber (such as the processing chamber of figure 1). The first dimension D1 is greater than the second dimension D2 of the pocket 1910, the second dimension D2 being measured from the inner diameter of the outer peripheral edge 1905. The substrate support 1900 may include a ledge 2100 (see fig. 11) disposed between an outer diameter of the surface 2000 and an inner diameter of the outer peripheral edge 1905. The pocket 1910 also includes a third dimension D3 measured from the inner diameter of the boss 2100. The third dimension D3 is less than the second dimension D2. Each of the dimensions D1, D2, and D3 may be a diameter of the substrate support 1900. In one embodiment, the third dimension D3 is about 90% to about 97% of the second dimension D2. The second dimension D2 is about 75% to about 90% of the first dimension D1. For a 450mm substrate, the first dimension D1 may be about 500mm to about 560mm, such as about 520mm to about 540mm, for example about 535 mm. In one embodiment, pocket 1910 (i.e., dimension D2 and/or dimension D3) may be sized to receive a 450mm substrate.

The depth D4 of the surface 2000 may be about 1mm to about 2mm from the top surface 1907 of the outer peripheral edge 1905. In some embodiments, the surface 2000 is slightly concave to prevent a bottom surface portion of a sagging (sagging) substrate from contacting the substrate support during processing. The surface 2000 may include a pocket surface radius (spherical radius) of about 34,000mm to about 35,000mm, such as about 34,200mm to about 34,300 mm. The pocket surface radius may be used to prevent contact between the substrate surface and at least a portion of the surface 2000 during processing, even when the substrate bows (bow). The height of the recessed pocket 1910 and/or the pocket surface radius may vary based on the thickness of a substrate supported by the substrate support 1900.

FIG. 11 is an enlarged cross-sectional view illustrating a portion of the substrate support of FIG. 10. The outer peripheral edge 1905 protrudes from the upper surface of the substrate support. In some embodiments, a beveled support surface 2102 (which acts as part of a support surface for the substrate) is disposed between the pocket 1910 and the outer peripheral edge 1905. In particular, the angled support surface 2102 is between an inner diameter of the outer peripheral edge 1905 (i.e., dimension D2) and an inner diameter of the boss 2100 (i.e., dimension D3). The angled support surface 2102 can reduce the contact surface area between the substrate and the substrate support 1900 when the edge of the substrate is supported by the angled support surface 2102. In one embodiment, the top surface 1907 of the outer peripheral edge 1905 is taller than the angled support surface 2102 by a dimension D5, and the dimension D5 may be less than about 3mm, such as about 0.6mm to about 1.2mm, for example about 0.8 mm.

In one embodiment, a fillet radius "R1" is formed at the interface where outer peripheral edge 1905 engages angled support surface 2102. Fillet radius R1 may be a continuously curved recess. In various embodiments, the fillet radius "R1" ranges between about 0.1 inches and about 0.5 inches, such as between about 0.15 inches and about 0.2 inches.

The angled support surface 2102 may be inclined relative to a horizontal surface (e.g., the top surface 1907 of the outer peripheral edge 1905). The angled support surface 2102 may be angled at an angle between about 1 degree and about 10 degrees, such as between about 2 degrees and about 6 degrees. Varying the slope or dimension of angled support surface 2102 can control the gap size between the bottom of the substrate and surface 2000 of pocket 1910 or the height of the bottom of the substrate relative to pocket 1910. In the embodiment illustrated in fig. 11, the cross-sectional view illustrates that the angled support surface 2102 extends radially inward from the fillet radius R1 toward the surface 2000 at a height illustrated as dimension D6 (which may be less than about 1 mm). The angled support surface 2102 terminates at the outer diameter of the surface 2000. The surface 2000 may be illustrated as a height of dimension D7 being recessed from the bottom of the boss 2100. Dimension D7 may be larger than dimension D6. In one embodiment, dimension D6 is about 65% to about 85% of dimension D7, such as about 77% of dimension D7. In other embodiments, the increase in dimension D7 from dimension D6 is about 30%. In one example, dimension D6 is about 0.05mm to about 0.15mm, such as about 0.1 mm. In some embodiments, top surface 1907 can be roughened to about 5Ra to about 7 Ra.

Substrate support 1900 having features described herein, such as angled support surfaces and cavity surface radii, has been tested and the results show good thermal conduction between the substrate and surface 2000 without contact between the substrate and surface 2000. The utilization of the ledge 2100 provides thermal conduction through minimal contact between the substrate and the angled support surface 2102.

Fig. 12 is a schematic isometric view of a preheat ring 2200 in accordance with embodiments described herein. The preheat ring 2200 may be positioned in a semiconductor processing chamber, such as, for example, a chemical vapor deposition chamber or an epitaxial deposition chamber. In particular, the preheat ring 2200 is configured to be disposed about a periphery of a substrate support (e.g., the substrate support 1900 of fig. 9-11) when the substrate support is in a processing position. One exemplary processing chamber that may be used to practice embodiments of the present disclosure is illustrated in fig. 1. The preheat ring 2200 includes an outer peripheral edge 2205 that defines the confines of an opening 2210 at which a substrate support (such as the substrate support 1900 of fig. 9-11) may be positioned. The preheat ring 2200 comprises a circular body fabricated from a ceramic material or a carbon material, such as graphite, which may be coated with silicon carbide.

Fig. 13 is a side cross-sectional view of preheat ring 2200 of fig. 12. Preheat ring 2200 includes a first dimension D1 measured from the outer diameter of outer peripheral edge 2205 and a second dimension D2 measured from the inner diameter of outer peripheral edge 2205. The outer peripheral edge has an outer diameter having a circumference that is smaller than a circumference of a semiconductor processing chamber, such as the processing chamber of fig. 1. The second dimension D2 may be substantially equal to the diameter of the opening 2210. The first dimension D1 is smaller than an inner perimeter of a semiconductor processing chamber, such as the processing chamber of fig. 1. Preheat ring 2200 also includes a recess 2215 formed in a bottom surface (e.g., bottom surface 2209) of outer peripheral edge 2205. Notch 2215 includes a third dimension D3 measured from the outer diameter of notch 1945. The third dimension D3 is less than the first dimension D1 but greater than the second dimension D2. Each of dimensions D1, D2, and D3 may be the diameter of preheat ring 2200. The recess 2215 may be used to contact a substrate support in use (such as the substrate support 1900 described with reference to fig. 9), and the third dimension D3 may be substantially equal to or slightly larger than an outer diameter of the substrate support (e.g., dimension D1 of fig. 10).

In one embodiment, dimension D3 is about 90% to about 98% of first dimension D1, such as about 94% to about 96% of first dimension D1, and second dimension D2 is about 80% to about 90% of first dimension D1, such as about 84% to about 87% of first dimension D1. For a 450mm substrate, the first dimension D1 may be about 605mm to about 630mm, such as about 615mm to about 625mm, for example 620 mm. In one embodiment, the preheat ring 2200 may be sized for use in processing 450mm substrates.

Fig. 14 is an enlarged cross-sectional view of the preheat ring 2200 of fig. 13. The preheat ring 2200, which is a circular body, can include a first thickness (i.e., an outer thickness) illustrated as dimension D4 and a second thickness (i.e., an inner thickness) illustrated as dimension D5. Dimension D4 is greater than dimension D5. In one embodiment, dimension D5 is about 75% to about 86% of dimension D4, such as about 81% of dimension D4. The outer peripheral edge 2205 of preheat ring 2200 includes a top surface 2207 and a bottom surface 2209 that are substantially parallel (i.e., parallel less than about 1.0 mm). Top surface 2207 extends inwardly from the edge of preheat ring 2200 to opening 2210 by a first radial width, while bottom surface 2209 extends inwardly from the edge of preheat ring 2200 to recess 2215 by a second radial width. The first radial width is greater than the second radial width. In one embodiment, the first radial width is from about 5mm to about 20mm, such as from about 8mm to about 16mm, for example about 10 mm. In some embodiments, at least bottom surface 2209 comprises a flatness of less than about 1.0 mm. A fillet radius "R" is formed at the corner of the recess 2215. Chamfers "R'" may also be formed on corners of preheat ring 2200 (e.g., at the interface where the outer edge of opening 2210 joins the inner edge of outer peripheral edge 2205). In one embodiment, one or both of R and R' may be about less than 0.5 mm. In one embodiment, dimension D5 is about 6.00 mm.

The radial width of outer peripheral edge 2205 is used to absorb heat from an energy source, such as radiation lamp 127 shown in fig. 1. The precursor gases are generally configured to flow across the outer peripheral edge 2205 substantially parallel to the top surface 2207 and the gases are preheated before reaching a substrate positioned on a substrate support (such as substrate support 1900 of fig. 9-11) in the processing chamber. The preheat ring 2200 has been tested and the results show that the flow of precursor gases may establish a laminar boundary layer on and across the top surface 2207 of the preheat ring 2200. In particular, the boundary layer (which improves heat transfer from the preheat ring 2200 to the precursor gas) is completely formed before the precursor gas reaches the substrate. As a result, the precursor gases gain sufficient heat prior to entering the processing chamber, which in turn increases substrate throughput and deposition uniformity.

Advantages of the present disclosure include an improved preheat ring having an outer peripheral edge that defines the limits of an opening. The outer peripheral edge has a radial width that allows the flow of precursor gas to fully develop a laminar boundary layer on the top surface of the preheat ring before the precursor gas reaches the substrate. The boundary layer improves heat transfer from the preheat ring to the precursor gas. As a result, the precursor gases gain sufficient heat prior to entering the processing chamber, which in turn increases substrate throughput and deposition uniformity. The opening of the preheat ring also allows the improved substrate support to be positioned therein. The substrate support has a recessed pocket surrounded by a beveled support surface that reduces the contact surface area between the substrate and the substrate support. The recessed pocket has a slightly concave surface to prevent contact between the substrate and the recessed pocket even when the substrate bows.

Exemplary Arch Structure Assembly

Described below are exemplary embodiments of an arch assembly. The dome assembly includes a curved upper dome for use in a semiconductor processing system. The upper dome has a central window and a peripheral flange joining the central window and connected to an outer periphery of the central window, wherein the central window is convex relative to the substrate support and the peripheral flange is angled about 10 ° to about 30 ° relative to a plane defined by an upper surface of the peripheral flange. The central window is curved towards the substrate, both to reduce the process volume and to allow rapid heating and cooling of the substrate during thermal processing. The peripheral flange has multiple curvatures that allow the central window to thermally expand without cracking or breaking.

Fig. 15A and 15B are schematic illustrations of an upper dome 2500, which upper dome 2500 may be used in a thermal processing chamber according to embodiments described herein. In one embodiment, a thermal processing chamber that may be suitable for use with embodiments of the upper dome is the processing chamber 100 of fig. 2. Fig. 15A illustrates a top perspective view of the upper dome 2500. Fig. 15B illustrates a cross-sectional view of the upper dome 2500. The upper dome 2500 has a substantially circular shape (fig. 15A) with a slightly concave outer surface 2502 and a slightly convex inner surface 2504 (fig. 15B). As will be discussed in more detail below, the concave outer surface 2502 is sufficiently curved to resist the compressive force of external atmospheric pressure against the reduced internal pressure in the processing chamber during substrate processing while being sufficiently flat to promote an orderly flow of process gases and uniform deposition of reactant materials.

The upper dome 2500 generally includes a central window portion 2506 that is substantially transparent to infrared radiation and a peripheral flange 2508 for supporting the central window portion 2506. The central window portion 2506 is illustrated as having a generally circular perimeter. The peripheral flange 2508 engages the central window portion 2506 along the support interface 2510 at the periphery of the central window portion 2506 and around the periphery of the central window portion 2506. The central window portion 2506 may have a convex curvature relative to the horizontal plane 2514 of the peripheral flange.

The central window portion 2506 of the upper dome 2500 can be formed of a material, such as transparent quartz, that is substantially optically transparent to direct radiation from the lamp without significantly absorbing the desired wavelength of radiation. Alternatively, the central window portion 2506 may be formed of a material having narrow-band filtering properties. Some of the heat radiation re-radiated from the heated substrate and substrate support may pass into the central window portion 2506 to be significantly absorbed by the central window portion 2506. These re-radiations generate heat within the central window portion 2506, thereby generating thermal expansion forces.

The central window portion 2506 is illustrated here as being circular in length and width, with a periphery forming a boundary between the central window portion 2506 and the peripheral flange 2508. However, the central window portion 2506 may have other shapes as desired by the user.

The peripheral flange 2508 may be fabricated from opaque quartz or other opaque material. The peripheral flange 2508 (which may be made opaque) remains relatively cool compared to the central window portion 2506, thereby causing the central window portion 2506 to bow outwardly beyond the bow of the original room temperature. As a result, thermal expansion within central window portion 2506 manifests as thermally compensated bowing. As the temperature of the process chamber increases, the thermally compensated bow of the central window portion 2506 increases. The central window portion 2506 is made thin and has sufficient elasticity to accommodate bowing, while the peripheral flange 2508 is thick and has sufficient rigidity to constrain the central window portion 2506.

In one embodiment, the upper arch 2500 is constructed in a manner that: the central window portion 2506 is an arc having a ratio of the radius of curvature of the central window portion 2506 to the width "W" of at least 5: 1. In one example, the ratio of the radius of curvature to the width "W" is greater than 10:1, such as between about 10:1 and about 50: 1. In another embodiment, the ratio of the radius of curvature to the width "W" is greater than 50:1, such as between about 50:1 and about 100: 1. The width "W" is the width of the central window portion 2506 between the boundaries set by the peripheral flange 2508 measured through the center of the central window portion 2506. Greater or less in the case of the above ratio refers to increasing or decreasing the value of the antecedent (i.e., radius of curvature) proportionally to the consequent (i.e., width "W").

In another embodiment shown in fig. 15B, the upper arch 2500 is constructed in a manner that: the central window portion 2506 is an arc having a ratio of the width "W" to the height "H" of the central window portion 2506 of at least 5: 1. In one example, the ratio of the width "W" to the height "H" is greater than 10:1, such as between about 10:1 and about 50: 1. In another embodiment, the ratio of the width "W" to the height "H" is greater than 50:1, such as between about 50:1 and about 100: 1. The height "H" is the height of the central window portion 2506 between the boundaries set by the first boundary line 2540 and the second boundary line 2542. The first boundary line 2540 is tangent to the sharp peak point of the curved portion in the central window portion 2506 facing the treatment region 1220. The second boundary 2542 intersects the point of the support interface 2510 furthest from the treatment area 1220.

The upper dome 2500 may have an overall outer diameter of about 200mm to about 500mm, such as about 240mm to about 330mm, for example about 295 mm. The central window portion 2506 can have a constant thickness of about 2mm to about 10mm, for example about 2mm to about 4mm, about 4mm to about 6mm, about 6mm to about 8mm, about 8mm to about 10 mm. In some examples, the central window portion 2506 is about 3.5mm to about 6.0mm thick. In one example, the thickness of the central window portion 2506 is about 4 mm.

The thickness of the central window portion 2506 provides a small thermal mass, allowing the upper dome 2500 to be able to heat and cool quickly. The central window portion 2506 may have an outer diameter of about 130mm to about 250mm, for example about 160mm to about 210 mm. In one example, the diameter of the central window portion 2506 is about 190 mm.

The peripheral flange 2508 may have a thickness of about 25mm to about 125mm, for example about 45mm to about 90 mm. The thickness of the peripheral flange 2508 is generally defined as the thickness between the planar upper surface 2516 and the planar bottom surface 2520. In one example, the thickness of the peripheral flange 2508 is about 70 mm. The peripheral flange 2508 can have a width of about 5mm to about 90mm, for example about 12mm to about 60mm, which can vary with radius. In one example, the width of the peripheral flange 2508 is about 30 mm. If a liner assembly is not used in the process chamber, the width of the peripheral flange 2508 may be increased by about 50mm to about 60mm and the width of the central window portion 2506 decreased by the same amount.

The central window portion 2506 has a thickness between 5mm and 8mm, such as 6mm thick. The thickness of the central window portion 2506 of the upper arch 2500 is selected to be in the ranges discussed above to ensure that shear stress (address) developed at the interface between the peripheral flange 2508 and the central window portion 2506 is addressed. In one embodiment, a thinner quartz wall (i.e., central window portion 2506) is a more efficient heat transfer medium so that less energy is absorbed by the quartz. The upper dome is thus maintained relatively cool. Thinner walled domes will also stabilize faster in temperature and react faster to convective cooling because less energy is stored and the conduction path to the outer surface is shorter. Thus, the temperature of the upper dome 2500 can be more closely maintained at a desired set point to provide better thermal uniformity across the central window portion 2506. In addition, the thinner dome walls result in improved temperature uniformity over the substrate as the central window portion 2506 is conducted radially to the peripheral flange 2508. It is also beneficial not to excessively cool the central window portion 2506 in the radial direction, as this can cause unwanted temperature gradients that will react onto the substrate surface being processed and cause film non-uniformity to be experienced.

Fig. 15C depicts a close-up view of the connection between the peripheral flange 2508 and the central window portion 2506, according to one embodiment. The peripheral flange 2508 has a beveled flange surface 2512 having at least a first surface 2517 (indicated by surface lines 2518). The first surface 2517 forms a first angle 2532 of about 20 ° to about 30 ° with the planar upper surface 2516. The angle of the first surface 2517 may be defined using a planar upper surface 2516 or a horizontal plane 2514. The planar upper surface 2516 is horizontal. Horizontal plane 2514 is parallel to planar upper surface 2516 of peripheral flange 2508.

The first angle 2532 may be more specifically defined as the angle between the planar upper surface 2516 (or horizontal plane 2514) of the peripheral flange 2508 and a surface line 2518 on the convex inner surface 2504 of the central window portion 2506, which surface line 2518 passes through the intersection of the central window portion 2506 and the peripheral flange 2508. In various embodiments, the first angle 2532 between the horizontal plane 2514 and the surface line 2518 is generally less than 35 °. Thus, the first surface 2517 forms an angle with the planar upper surface 2516 that is typically less than 35 °. In one embodiment, the first angle 2532 is about 6 ° to about 20 °, such as between about 6 ° and about 8 °, about 8 ° and about 10 °, about 10 ° and about 12 °, about 12 ° and about 14 °, about 14 ° and about 16 °, about 16 ° and about 18 °, about 18 ° and about 20 °. In one example, the first angle 2532 is about 10 °. In another example, the first angle 2532 is about 30 °. The beveled flange surface 2512 having a first angle 2532 of about 20 ° provides structural support to the central window portion 2506 supported by the peripheral flange 2508.

In another embodiment, angled flange surface 2512 may have one or more additional angles, depicted here as second angle 2530 formed from second surface 2519 (depicted by surface line 2521). The second angle 2530 of the angled flange surface 2512 is the angle between the support angle 2534 and the first angle 2532 of the peripheral flange 2508. Support angle 2534 is the angle between tangential surface 2522 (tangential surface 2522 is formed by convex inner surface 2504 at support interface 2510) and horizontal plane 2514. For example, if support angle 2534 is 3 ° and first angle 2532 is 30 °, then second angle 2530 is between 3 ° and 30 °. The second angle 2530 provides additional stress reduction by redirecting the force with two sequential redirections rather than a single redirection, which further disperses the force generated by expansion and pressure.

The support angle 2534, the first angle 2532, and the second angle 2530 may have angles that create a fluid transition (fluidtransition) between end surfaces between the first surface 2517, the second surface 2519, and the tangent surface 2522. In one example, the tangent surface 2522 has an end surface that is in fluid transition with an end surface of the second surface 2519. In another example, second surface 2519 has an end surface that has a fluid transition with an end surface of first surface 2517. As used herein, an end surface is formed at an imaginary separation between any of the first surface 2517, the second surface 2519, or the tangent surface 2522. The fluid transition between the end surfaces is the transition between the surfaces that are joined without forming a visible edge.

It is believed that the angle of the beveled flange surface 2512 allows the upper dome 2500 to thermally expand while reducing the process volume in the processing region 1220. Without wishing to be bound by theory, scaling up (scale) the existing upper dome for thermal processing increases process volume, thus wasting reactant gases, reducing throughput, reducing deposition uniformity, and increasing cost. The beveled flange surface 2512 allows expansion stresses to be absorbed without changing the ratio described above. By increasing the beveled flange surface 2512, the first term of the ratio of radius of curvature to width of the central window portion 2506 can be increased. By increasing the first term of the ratio, the curvature of the central window portion 2506 becomes flatter, allowing for a smaller chamber volume.

The advantages of the upper dome structure provide a number of advantages in both stress compensation and minimizing intrusion into the processing region of the processing chamber. The upper dome includes at least a curved central window and a peripheral flange having a plurality of angles. The curved central window reduces space in the processing region and the substrate can be heated and cooled more efficiently during thermal processing. The peripheral flange has a plurality of angles formed in conjunction with the central window and away from the processing region. The plurality of angles provide stress relief to the central window during the heating and cooling steps. Further, the angle of the peripheral flange allows for a thinner flange and a thinner central window to further reduce the process volume. By reducing the process volume and component size, production and processing costs can be reduced without compromising the quality of the final product or the life cycle of the dome assembly.

Embodiments described herein disclose an atmospheric epitaxial chamber. The atmospheric epitaxial chamber may incorporate one or more of a dome assembly, a liner assembly, a preheat ring, a substrate support, an inject insert, a lamp assembly including a reflector, or a combination thereof. Thus, through the benefits of the components described and incorporated above, the epitaxial deposition chambers described herein allow for processing of larger substrates while maintaining throughput, reducing cost, and providing reliable uniform deposition products.

While the foregoing is directed to embodiments of the disclosed apparatus, method, and system, other and further embodiments of the disclosed apparatus, method, and system may be devised without departing from the basic scope thereof, and the scope thereof is determined by the claims that follow.

Claims

1. A chamber, comprising:

a substrate support positioned in a processing region;

a radiant energy assembly comprising a plurality of radiant energy sources;

a liner assembly;

an dome assembly, at least a portion of the dome assembly positioned between the substrate support and the radiant energy assembly, the dome assembly comprising an upper dome and a lower dome, the upper dome comprising:

a curved central window portion having:

a width; and

a height defined by a first boundary line tangent to a peak of the curved central window portion facing the process region and a second boundary line intersecting a point at a periphery of the curved central window portion furthest from the process region;

wherein the curved central window portion has a window curvature defined by a ratio of the width to the height, the ratio being at least 10: 1; and

a peripheral flange having:

a planar upper surface;

a planar lower surface; and

a beveled flange surface, wherein the peripheral flange engages the curved central window portion at the peripheral edge of the curved central window portion, and the beveled flange surface has a first surface having a first surface line forming a first angle with a horizontal plane parallel to the planar upper surface, the first angle being less than 35 degrees, wherein the beveled flange surface further comprises a second surface between the peripheral edge of the curved central window portion and the first surface, wherein a second surface line of the second surface forms a second angle with the horizontal plane parallel to the planar upper surface, the second angle being less than 15 degrees, and wherein the curved central window portion has a tangential surface having a support angle of less than 10 degrees; and

an inject insert coupled to the liner assembly.

2. The chamber of claim 1, wherein the curved central window portion has a constant thickness.

3. The chamber of claim 1, wherein the peripheral flange has a thickness of less than 50 mm.

4. The chamber of claim 1, wherein a ratio of the width to the height is greater than 50: 1.

5. The chamber of claim 1 or 2, wherein a ratio of a magnitude of the first angle to a magnitude of the second angle is 3: 1.

6. A chamber, comprising:

a substrate support positioned in a processing region, the substrate support having:

an outer peripheral edge defining the confines of a pocket, wherein the pocket has a concave surface recessed from the outer peripheral edge; and

a beveled support surface disposed between the outer peripheral edge and the pocket, wherein the beveled support surface is inclined relative to a horizontal surface of the outer peripheral edge; and

an arch assembly positioned between the substrate support and the radiant energy assembly, the arch assembly including an upper arch and a lower arch, the upper arch including:

a convex central window portion having:

a width; and

a height defined by a first boundary line tangent to a peak of the convex central window portion facing the treatment region and a second boundary line intersecting a point at a periphery of the convex central window portion furthest from the treatment region;

wherein the convex central window portion has a window curvature defined by a ratio of the width to the height, the ratio being at least 10: 1; and

a peripheral flange having:

a planar upper surface;

a planar lower surface; and

a beveled flange surface joining the convex central window portion at the periphery of the convex central window portion, the beveled flange surface having a first surface with a first surface line forming a first angle with a horizontal plane parallel to the planar upper surface, the first angle being less than 35 degrees, wherein the beveled flange surface further comprises a second surface between the periphery of the convex central window portion and the first surface, wherein a second surface line of the second surface forms a second angle with the horizontal plane parallel to the planar upper surface, the second angle being less than 15 degrees, and wherein the convex central window portion has a tangent surface with a support angle of less than 10 degrees.

7. The chamber of claim 6, further comprising:

a ledge disposed between an outer diameter of the recessed surface and an inner diameter of the outer peripheral edge.

8. The chamber of claim 7, wherein the inner diameter of the lug is 90% to 97% of the inner diameter of the outer peripheral edge, wherein the inner diameter of the outer peripheral edge is 75% to 90% of the outer diameter of the outer peripheral edge, and wherein the convex central window portion has a constant thickness.

9. The chamber of claim 6, further comprising a fillet radius formed at an interface between the outer peripheral edge and the angled support surface.