The content of the invention
In view of the foregoing, it is necessary to which a kind of slim ultrasonic sensing device and its manufacture method are provided.
A kind of ultrasonic sensing device, including be cascading a cover plate, an adhesive-layer, a signal receiving unit and
One signal transmitting unit, the signal receiving unit includes a first surface second surface relative with the first surface
And with least one side being connected between the first surface and the second surface, the adhesive-layer is formed at described
Fitted with the cover plate with by the signal receiving unit on one surface, the first surface and at least one side
Between be provided with joint face, the maximal roughness of the first surface is less than 5 μm, and the adhesive-layer thickness is less than 20 μm.
A kind of manufacture method of ultrasonic sensing device, comprises the following steps:
Ultrasonic wave sensing module is provided, the ultrasonic wave sensing module includes signal receiving unit, a substrate
With a signal transmitting unit, the signal receiving unit have a first surface and be connected with the first surface at least one
Individual side, the first surface and the multiple side are crossed to form at least one seamed edge, at least one seamed edge include by
Cut the cutting seamed edge for being formed;
The cutting seamed edge is polished so that the maximal roughness of the first surface is less than 5 μm, while described
At least one joint face is formed between first surface and the side as where cutting the seamed edge for being formed;
An adhesive-layer is formed on the first surface, and a cover plate is passed through into the adhesive-layer and the signal receiving unit
Laminating, the adhesive-layer thickness is less than 20 μm.
The cutting seamed edge of the signal receiving unit for passing through ultrasonic sensing device of polishing compared to prior art, the present invention,
Joint face is formed between the surface and side of ultrasonic sensing device, so that the roughness on signal receiving device surface is reduced,
And then reduce the thickness of adhesive-layer used by receiving unit surface.And adhesive-layer be ultrasonic transmission process must be through structure, this is just
The decay during ultrasonic transmission is effectively reduced, so as to improve the sensitivity of whole device.
Specific embodiment
Accompanying drawing is coordinated to be described in detail below by way of specific embodiment.
Fig. 1 is referred to, Fig. 1 is the generalized section of first embodiment of the invention ultrasonic sensing device 1.The ultrasonic wave
Sensing device further 1 includes the cover plate 11, an adhesive-layer 12, a signal receiving unit 13, a substrate 14, the letter that are cascading
Number flexible PCB 16 of transmitting element 15 and.The cover plate 11 is sensing face away from the surface of the signal receiving unit 13
110.The signal transmitting unit 15 is with the substrate 14 by the flexible PCB 16 and external circuit (not shown) electricity
Property be connected.In the present embodiment, the substrate 14 is thin-film transistor array base-plate.
Also referring to Fig. 2, Fig. 2 is the structural representation of the signal receiving unit 13.The signal receiving unit 13
Including a first surface 131 second surface 132 relative with the first surface 131 and it is connected to the first surface
First side 133, second side 134 between 131 and the second surface 132, the 3rd side 135, the 4th side 136.Institute
Adhesive-layer 12 is stated to be formed on the first surface 131.In the present embodiment, the first surface 131 is connected to described
The number of the side between two surfaces 132 is 4, and in other embodiments, the side number is alternatively other numerical value.Described
A joint face 137 is provided between one surface 131 and the first side 133.The joint face 137 is plane, and it is with described the
The scope of the angle β of one surface 131 is 10 °~85 °, throwing of the joint face 137 in the plane of the first surface 131
Shadow length range is 5 μm~300 μm, and the projected length scope in the plane of the first side 133 is 5 μm~50 μm.
The present invention also provides the ultrasonic sensing device of a comparative example, the ultrasonic wave sensing dress of the comparative example
Put roughly the same with the structure of the ultrasonic sensing device 1, differ only in the ultrasonic wave sensing dress of the comparative example
The first surface of the signal receiving unit put is joined directly together with first side, therebetween in the absence of joint face.The contrast is real
There is a seamed edge to be formed by cutting to apply the first surface of the signal receiving unit of the ultrasonic sensing device of example, because cutting can be led
Cause the first surface of signal receiving unit forming flash at cutting seamed edge, cause the signal of the comparative example to receive
The first surface maximal roughness of unit reaches 60 μm.The sound wave sensing apparatus 1 are connect by the signal to the comparative example
The cutting seamed edge for receiving unit carries out polishing formation, and joint face 137 is formed after polishing, and the maximal roughness of the first surface is by 60
μm it is reduced to less than 5 μm.
The maximal roughness of the first surface determines the coating thickness of the adhesive-layer.The thickness of the adhesive-layer should
When the maximal roughness more than the first surface, viscose glue material effectively could uniformly spread out, so as to ensure the adhesive-layer both sides
The good fit of material.Therefore, the maximal roughness for reducing the first surface just can reduce the adhesive-layer thickness.In this hair
In bright, because the maximal roughness of the first surface 131 is reduced to less than 5 μm by 60 μm, the adhesive-layer thickness can be corresponding
Reduce.In the present embodiment, the adhesive-layer thickness is 6 μm.
When the ultrasonic sensing device 1 works, external circuit (not shown) passes through 16 pairs of institutes of the flexible PCB
The applied voltage of signal transmitting unit 15 is stated, the signal transmitting unit 15 sends a ultrasonic signal, the ultrasonic signal warp
Cross the substrate 14, the signal receiving unit 13, the adhesive-layer 12 and the cover plate 11 and reach the sensing face 110 and quilt
The sensing face 110 reflects to form reflected signal.By taking fingerprint recognition application as an example, when the ultrasonic sensing device 1 is used as referring to
When there is finger touch in line identifying device, and the sensing face 110, due to fingerprint ridge and absorption of the fingerprint valley to ultrasonic wave
Rate is different with reflectivity, and the signal that the ultrasonic wave is reflected by the sensing face 110 is just different, and the reflected signal passes through again
The cover plate 11, the adhesive-layer 12 are received by the signal receiving unit 13, and the signal receiving unit 13 receives reflection
The ultrasonic signal for returning, is translated into electric signal transmission to the substrate 14, then is transmitted to outer by the flexible PCB 16
Portion's circuit (not shown).The change of external circuit analysis reflected signal simultaneously forms corresponding touch command.
It can be seen that, the ultrasonic wave is in transmitting procedure twice by the adhesive-layer 12.Reduce the thickness of the adhesive-layer 12
Degree can substantially reduce decay of the ultrasonic signal in transmitting procedure.After tested, the ultrasonic sensing device 1 compared to
The ultrasonic sensing device of comparative example, signal to noise ratio, to 3.64, improves 50% by 2.43 raisings of comparative example.
The signal receiving unit 13 is conventional ultrasound signal receipt unit, by a piezoelectric material layer and an electrode layer
Composition, the signal transmitting unit 15 is conventional ultrasonic signal transmitting element, by two electrode layers being oppositely arranged and folder
If piezoelectric material layer composition therein.The material of the piezoelectric material layer can be vinylidene difluoride (Polyvinylidene
Fluoride, PVDF), barium titanate, lead titanates, lead zirconate titanate (PZT), tantalum scandium acid plumbum (PST), quartz and vinylidene fluoride and three
The copolymer of PVF.The material of the piezoelectric material layer can for vinylidene difluoride (Polyvinylidene Fluoride,
PVDF), barium titanate, lead titanates, lead zirconate titanate (PZT), tantalum scandium acid plumbum (PST), quartz and vinylidene fluoride and trifluoro-ethylene
Copolymer.The electrode layer can be made up of the preferable metal material of conductance, for example, the high conductivity material such as aluminium, copper, nickel, gold
Material, can also be led by such as transparent oxide conductive material (such as tin indium oxide, indium zinc oxide), silver, CNT or Graphene
Electric material is made, but is not limited to above material.The thickness range of the signal receiving unit 13 and the signal transmitting unit 15
It is 20 μm~80 μm.
The thickness range of the cover plate 11 is 0.1mm~1mm, and its material can be glass, sapphire, monocrystalline silicon, plastics etc..
The material of the substrate 14 can for glass, sapphire, monocrystalline silicon, plastics (such as PMMA, PES, PET, PEN, PC,
PU)。
Ground is changed, the first surface 131 also can be only with a side having joint face between upper side.
The ultrasonic sensing device (not shown) of second embodiment of the invention is big with the structure of the ultrasonic sensing device 1
Cause is identical, differs only in the structure of its signal receiving unit.For convenience of description, hereinafter with above-described embodiment structure identical
Element continues to use the component symbol of above-mentioned implementation method.
As shown in figure 3, structures of the Fig. 3 for the signal receiving unit 23 of the ultrasonic sensing device of second embodiment of the invention
Schematic diagram.The signal receiving unit 23 includes a first surface 131 second surface relative with the first surface 131
132 and the first side 133, second side 134, that are connected between the first surface 131 and the second surface 132
Three sides 135, the 4th side 136.The adhesive-layer 12 is formed on the first surface 131.The first surface 131 and institute
State first side 133.The joint face 237 is cambered surface, and the radius of the cambered surface is 0.005cm~0.3cm.
The joint face 237 is formed by the seamed edge that the first surface 131 of polishing intersects with the second side 134,
The surface maximal roughness of the first surface 131 is less than 5 μm.The thickness of the adhesive-layer is less than 20 μm.
Ground is changed, the first surface 131 also can have joint face between more than one side.
Fig. 4 is referred to, Fig. 4 is the flow chart of the manufacture method of the above-mentioned ultrasonic sensing device 1 of manufacture of the invention, described
The manufacture method of ultrasonic sensing device 1 comprises the following steps:
Step S401 a, there is provided ultrasonic wave senses module, and it is single that the ultrasonic wave sensing module includes that a signal is received
First 13, substrate 14 and a signal transmitting unit 15, the signal receiving unit 13 include a first surface 131 and institute
State the relative second surface 132 of first surface 131 and be connected between the first surface 131 and the second surface 132
First side 133, second side 134, the 3rd side 135, the 4th side 136, the first surface 131 and first side
Face 133 is crossed to form seamed edge 141, and the seamed edge 141 is formed by cutting, and the seamed edge 141 is cutting seamed edge;
The signal receiving unit 13 includes an electrode layer and a piezoelectric material layer, and the signal transmitting unit 15 includes two
Individual electrode layer and the piezoelectric material layer being located between described two electrode layers, the substrate 14 are thin film transistor (TFT) array base
Slab element;
In the present embodiment, side number and the first surface 131 and the institute of the first surface 131 are directly connected in
It is 4 to state the seamed edge number that side is crossed to form, and in other embodiments, the side number and the seamed edge number are alternatively it
Its numerical value.
Step S403, polishes the seamed edge 141, the maximal roughness of the first surface 131 is reduced to 5 μm
Hereinafter, while forming joint face 137, the joint face 137 is plane, and it is with the angle scope of the first surface 131
10 °~85 °, its projected length scope in the plane of the first surface 131 is 5 μm~300 μm, and it is in first side
Projected length scope in the plane in face 133 is 5 μm~50 μm;
In other embodiments, also formed by cutting if any other seamed edges, then the cutting seamed edge of equally polishing forms one
Above joint face.
Step S405 a, there is provided flexible PCB 16, by itself and the signal transmitting unit 15 and the thin film transistor (TFT)
Array base palte 14 is electrically connected with respectively.
Step S407, forms an adhesive-layer 12 on the first surface 131, and a cover plate 11 is passed through into the adhesive-layer 12
Fitted with the signal receiving unit 13, the thickness of the adhesive-layer 12 is less than 20 μm.
So just form the sound wave sensing apparatus 1.
Ground is changed, above-mentioned steps S403 is replaced with into following steps:
Cutting seamed edge 141 to the signal receiving unit 13 is polished, and makes the maximum roughness of the first surface 131
Degree is reduced to less than 5 μm, while forming joint face 237, the joint face 237 is cambered surface, and the radius of the cambered surface is
0.005cm~0.3cm.
So just form the ultrasonic sensing device of above-mentioned second embodiment.