CN106684075A - High-light efficiency light source assembly and preparation method thereof - Google Patents
High-light efficiency light source assembly and preparation method thereof Download PDFInfo
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- CN106684075A CN106684075A CN201710083080.5A CN201710083080A CN106684075A CN 106684075 A CN106684075 A CN 106684075A CN 201710083080 A CN201710083080 A CN 201710083080A CN 106684075 A CN106684075 A CN 106684075A
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- 238000002360 preparation method Methods 0.000 title claims abstract description 25
- 239000000758 substrate Substances 0.000 claims abstract description 42
- 239000000843 powder Substances 0.000 claims abstract description 26
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 claims abstract description 19
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims abstract description 17
- 239000000741 silica gel Substances 0.000 claims abstract description 17
- 229910002027 silica gel Inorganic materials 0.000 claims abstract description 17
- 239000004332 silver Substances 0.000 claims abstract description 14
- 229910052709 silver Inorganic materials 0.000 claims abstract description 14
- 230000001795 light effect Effects 0.000 claims description 24
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 claims description 17
- 239000000463 material Substances 0.000 claims description 17
- 239000007787 solid Substances 0.000 claims description 12
- 241000446313 Lamella Species 0.000 claims description 11
- 239000000919 ceramic Substances 0.000 claims description 5
- 229910010293 ceramic material Inorganic materials 0.000 claims description 3
- 239000011248 coating agent Substances 0.000 claims description 3
- 238000000576 coating method Methods 0.000 claims description 3
- 238000010438 heat treatment Methods 0.000 claims description 3
- 239000000126 substance Substances 0.000 claims 1
- 238000004519 manufacturing process Methods 0.000 abstract description 4
- 230000017525 heat dissipation Effects 0.000 abstract 2
- 238000005516 engineering process Methods 0.000 description 4
- 239000004593 Epoxy Substances 0.000 description 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical group [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 2
- 239000004411 aluminium Substances 0.000 description 2
- 229910052782 aluminium Inorganic materials 0.000 description 2
- 150000001875 compounds Chemical class 0.000 description 2
- 230000002950 deficient Effects 0.000 description 2
- 239000006185 dispersion Substances 0.000 description 2
- 239000005995 Aluminium silicate Substances 0.000 description 1
- 238000009825 accumulation Methods 0.000 description 1
- 235000012211 aluminium silicate Nutrition 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 229910002114 biscuit porcelain Inorganic materials 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000005286 illumination Methods 0.000 description 1
- NLYAJNPCOHFWQQ-UHFFFAOYSA-N kaolin Chemical compound O.O.O=[Al]O[Si](=O)O[Si](=O)O[Al]=O NLYAJNPCOHFWQQ-UHFFFAOYSA-N 0.000 description 1
- 238000000034 method Methods 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- -1 radiator Substances 0.000 description 1
- 238000009877 rendering Methods 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 238000005245 sintering Methods 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
- H01L25/03—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes
- H01L25/04—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers
- H01L25/075—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L33/00
- H01L25/0753—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L33/00 the devices being arranged next to each other
-
- F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
- F21—LIGHTING
- F21K—NON-ELECTRIC LIGHT SOURCES USING LUMINESCENCE; LIGHT SOURCES USING ELECTROCHEMILUMINESCENCE; LIGHT SOURCES USING CHARGES OF COMBUSTIBLE MATERIAL; LIGHT SOURCES USING SEMICONDUCTOR DEVICES AS LIGHT-GENERATING ELEMENTS; LIGHT SOURCES NOT OTHERWISE PROVIDED FOR
- F21K9/00—Light sources using semiconductor devices as light-generating elements, e.g. using light-emitting diodes [LED] or lasers
- F21K9/90—Methods of manufacture
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/50—Wavelength conversion elements
- H01L33/501—Wavelength conversion elements characterised by the materials, e.g. binder
- H01L33/502—Wavelength conversion materials
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/64—Heat extraction or cooling elements
- H01L33/642—Heat extraction or cooling elements characterized by the shape
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- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Physics & Mathematics (AREA)
- Optics & Photonics (AREA)
- General Engineering & Computer Science (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Luminescent Compositions (AREA)
Abstract
The invention discloses a high-light efficiency light source assembly, which sequentially comprises a silica gel layer, a fluorescent powder layer, an LED chip layer, a silver paste line layer and a substrate from top to bottom, wherein a plurality of diversion holes for heat dissipation are arranged in the substrate; and the fluorescent powder layer is prepared from high-light efficiency fluorescent powder. The plurality of diversion holes are arranged in the substrate and air circulation is facilitated, so that the heat dissipation performance is excellent. Meanwhile, due to selection of the high-light efficiency fluorescent powder, the light efficiency of a whole lamp is improved and can reach over 200lm/W. The invention further discloses a preparation method of the high-light efficiency light source assembly. The preparation process is simple, the reject ratio can be reduced and the production cost and the preparation cost are greatly reduced.
Description
Technical field
The present invention relates to lighting technical field, a kind of high light effect source component and preparation method thereof is particularly related to.
Background technology
LED illumination technology has shown outstanding energy-saving effect, LED light source conduct by development and accumulation for many years
A kind of emerging semiconductor light-emitting elements, have the advantages that small volume, consume energy that low, caloric value is low and long lifespan, therefore LED quilt
Widely use.
Very widely used today LED, mainly including LED light source, substrate, radiator, base and bulb housing.Existing market
On commonly use is aluminium base (epoxy plate, ceramic wafer), and aluminium base (epoxy plate, ceramic wafer) is separated with LED producers
Produce, then paster LED light source consisting component, preparation process is complex, especially paster technique, it is easy to cause element to damage
It is bad.And the light efficiency of this traditional LED entirety is not high, typically all can only be in 80lm/W or so, it is difficult to meet in the market and get over
Carry out light efficiency demand higher.
Therefore, the present inventor needs a kind of new technology of design badly to improve its problem.
The content of the invention
The present invention is intended to provide a kind of high light effect source component and preparation method thereof, it can effectively improve light source assembly
Light efficiency, and simplify production technology.
In order to solve the above technical problems, the technical scheme is that：
A kind of high light effect source component, includes layer of silica gel, phosphor powder layer, LED core lamella, silver paste circuit successively from top to bottom
Layer and substrate, wherein being provided with multiple pod apertures for radiating inside the substrate, the phosphor powder layer uses specular removal fluorescence
Powder is prepared from.
Preferably, the specular removal fluorescent material contains formula (I) compound：
M1 yM2 5OzCx：M3 w……………………………………(I)
Wherein, 2.25≤x≤3.75,2.7≤y≤3,0.01 ＜ w≤0.3, and 4.5≤z≤7.5；
M1It is selected from the group：Sc3+、Y3+、La3+、Sm3+、Gd3+、Tb3+、Pm3+、Er3+、Lu3+, and combinations thereof；
M2It is selected from the group：Al3+、In3+、Ga3+, and combinations thereof；And
M3It is selected from the group：Tm3+、Bi3+、Tb3+、Ce3+、Eu3+、Mn3+、Er3+、Yb3+、Ho3+、Gd3+、Pr3+、Dy3+、Nd3+And
Its combination.
Preferably, the specular removal fluorescent material is Y2.98Al5O7.5C2.25：Tm0.02、Y2.95Al5O6C3：Bi0.05、
Y2.94Al5O6C3：Tb0.06、Y2.95Al5O7.5C2.25：Ce0.05、Y2.95Al5O6C3：Ce0.05、Y2.95Al5O4.5C3.75：Ce0.05、
Y2.95Al5O6C3：Mn0.05、Y2.75GaAl4O6C3：Mn0.25、Y2.94Al5O4.5C3.75：Bi0.06、Y2.94Al5O4.5C3.75：Tm0.06、
Y2.94Al5O4.5C3.75：Ce0.04Tb0.02、Y2.95Al5O4.5C3.75：Mn0.05、Y2.95Ga5O4.5C3.75：Mn0.05、Y2.94Al5O6C3：
Bi0.06、Y2.94Al5O6C3：Mn0.06、Y2.94Al5O6C3：Ce0.06、Lu1.72Gd1.2Al5O6C3：Ce0.05Pr0.03、
Lu1.72Er1Ga5O4.5C3.75：Mn0.25Dy0.03、Lu1.92Sc1Al5O6C3：Ce0.05Yb0.03、Sm1.92La1Al5O6C3：Ce0.05Ho0.03、
Y2.32Gd0.6In1Al4O6C3：Ce0.05Nd0.03Or Lu1.95Pm1Al5O6C3：Ce0.05。
Preferably, the substrate is ceramic substrate.
A kind of preparation method based on high light effect source component described above, comprises the following steps：
S1：High-heat-conductivity ceramic material is formed into substrate by extruder or mould, multiple is provided with inside the substrate
For the pod apertures for radiating；
S2：Microwave solid is carried out to substrate；
S3：The pre-heat treatment and baking treatment are carried out to the substrate after solid；
S4：Conductive silver paste is printed on substrate, silver paste line layer is formed；
S5：One or more LED chip is fixed on silver paste line layer using bonder, forms LED core lamella；
S6：Specular removal fluorescent material is printed on LED core lamella, phosphor powder layer is formed；
S7：Silica gel is fixed on phosphor powder layer, layer of silica gel is formed.
Preferably, the step S2 is specifically included：
Substrate is put into industrial microwave oven, solid is carried out with the frequency of 2455MHZ, taken out after 3 minutes.
Preferably, the step S3 is specifically included：
Substrate after solid is put into baking oven, is 200 DEG C by temperature setting, taken out after preheating 8h, be put into high temperature oven
In；
It is 1600 DEG C by high temperature oven temperature setting, is taken out after baking 5h.
Preferably, the step S4 is specifically included：
Conductive silver paste is printed on substrate by circuit board press, silver paste line layer is formed；
It is put into baking oven, by temperature setting between 130 DEG C -150 DEG C, is taken out after baking 20-30min.
Preferably, the step S6 is specifically included：
Specular removal fluorescent material is printed on LED core lamella using full-automatic fluorescent powder coating machine, phosphor powder layer is formed；
Put it into baking oven, by temperature setting between 145 DEG C -155 DEG C, taken out after baking 25-30min.
Preferably, the step S7 is specifically included：
Silica gel is fixed on phosphor powder layer using full-automatic glue-dropping machine, forms layer of silica gel；
It is placed in baking oven, is 50 DEG C by temperature setting, is taken out after 60min.
Using above-mentioned technical proposal, the present invention at least includes following beneficial effect：
1. high light effect source component of the present invention, due to being provided with multiple pod apertures inside substrate, is easy to air circulation,
Therefore heat dispersion is superior.Simultaneously because the selection of specular removal fluorescent material, also causes that the light efficiency of whole lamp is improved, 200lm/W is can reach
More than.
2. the preparation method of high light effect source component of the present invention, preparation process is simple, without paster operation, can be with
Fraction defective is reduced, production and preparation cost is greatly lowered, be conducive to enterprise's popularization and application.
Brief description of the drawings
Fig. 1 is the structural representation of high light effect source component of the present invention；
Fig. 2 is the flow chart of the preparation method of high light effect source component of the present invention.
Wherein：1- layer of silica gel, 2- phosphor powder layers, 3-LED chip layers, 4- silver paste line layers, 5- substrates, 6- pod apertures.
Specific embodiment
Below in conjunction with the accompanying drawing in the embodiment of the present invention, the technical scheme in the embodiment of the present invention is carried out clear, complete
Site preparation is described, it is clear that described embodiment is only a part of embodiment of the invention, rather than whole embodiments.It is based on
Embodiment in the present invention, it is every other that those of ordinary skill in the art are obtained under the premise of creative work is not made
Embodiment, belongs to the scope of protection of the invention.
Embodiment 1
As shown in figure 1, to meet a kind of high light effect source component of the invention, include layer of silica gel 1, glimmering successively from top to bottom
Light bisque 2, LED core lamella 3, silver paste line layer 4 and substrate 5, wherein being provided with multiple water conservancy diversion for radiating inside the substrate 5
Hole 6, the phosphor powder layer 2 is prepared from using specular removal fluorescent material.
Preferably, the specular removal fluorescent material contains formula (I) compound：
M1 yM2 5OzCx：M3 w……………………………………(I)
Wherein, 2.25≤x≤3.75,2.7≤y≤3,0.01 ＜ w≤0.3, and 4.5≤z≤7.5；
M1It is selected from the group：Sc3+、Y3+、La3+、Sm3+、Gd3+、Tb3+、Pm3+、Er3+、Lu3+, and combinations thereof；
M2It is selected from the group：Al3+、In3+、Ga3+, and combinations thereof；And
M3It is selected from the group：Tm3+、Bi3+、Tb3+、Ce3+、Eu3+、Mn3+、Er3+、Yb3+、Ho3+、Gd3+、Pr3+、Dy3+、Nd3+And
Its combination.
Preferably, the specular removal fluorescent material is Y2.98Al5O7.5C2.25：Tm0.02、Y2.95Al5O6C3：Bi0.05、
Y2.94Al5O6C3：Tb0.06、Y2.95Al5O7.5C2.25：Ce0.05、Y2.95Al5O6C3：Ce0.05、Y2.95Al5O4.5C3.75：Ce0.05、
Y2.95Al5O6C3：Mn0.05、Y2.75GaAl4O6C3：Mn0.25、Y2.94Al5O4.5C3.75：Bi0.06、Y2.94Al5O4.5C3.75：Tm0.06、
Y2.94Al5O4.5C3.75：Ce0.04Tb0.02、Y2.95Al5O4.5C3.75：Mn0.05、Y2.95Ga5O4.5C3.75：Mn0.05、Y2.94Al5O6C3：
Bi0.06、Y2.94Al5O6C3：Mn0.06、Y2.94Al5O6C3：Ce0.06、Lu1.72Gd1.2Al5O6C3：Ce0.05Pr0.03、
Lu1.72Er1Ga5O4.5C3.75：Mn0.25Dy0.03、Lu1.92Sc1Al5O6C3：Ce0.05Yb0.03、Sm1.92La1Al5O6C3：Ce0.05Ho0.03、
Y2.32Gd0.6In1Al4O6C3：Ce0.05Nd0.03Or Lu1.95Pm1Al5O6C3：Ce0.05。
About at 1600 DEG C, tolerable temperature is improved the specular removal fluorescent material sintering temperature of the present embodiment, and good thermal stability.
It is applied to when on LED chip, luminous intensity and luminous efficacy are good, and tolerable temperature is high, and with good color rendering, the light of releasing
Color is not naturally dazzling.
Preferably, the substrate 5 is ceramic substrate.
High light effect source component described in the present embodiment, due to being provided with multiple pod apertures inside substrate, is easy to air circulation,
Therefore heat dispersion is superior.Simultaneously because the selection of specular removal fluorescent material, also causes that the light efficiency of whole lamp is improved, 200lm/W is can reach
More than.
Embodiment 2
As shown in Fig. 2 being a kind of preparation method of the high light effect source component based on described in embodiment 1, it includes as follows
Step：
S1：High-heat-conductivity ceramic material (preferably kaolin) is formed into substrate, the base by extruder or mould
Intralamellar part is provided with multiple pod apertures for radiating；
S2：Microwave solid is carried out to substrate；
S3：The pre-heat treatment and baking treatment are carried out to the substrate after solid；
S4：Conductive silver paste is printed on substrate, silver paste line layer is formed；
S5：One or more LED chip is fixed on silver paste line layer using bonder, forms LED core lamella；
S6：Specular removal fluorescent material is printed on LED core lamella, phosphor powder layer is formed；
S7：Silica gel is fixed on phosphor powder layer, layer of silica gel is formed.
Preferably, the step S2 is specifically included：
Substrate is put into industrial microwave oven, solid is carried out with 2455MHZ, taken out after 3 minutes.
Preferably, the step S3 is specifically included：
Substrate after solid is put into baking oven, is 200 DEG C by temperature setting, taken out after preheating 8h, be put into high temperature oven
In；
It is 1600 DEG C by high temperature oven temperature setting, is taken out after baking 5h.
Preferably, the step S4 is specifically included：
Conductive silver paste is printed on substrate by circuit board press, silver paste line layer is formed；
It is put into baking oven, by temperature setting between 130 DEG C -150 DEG C, is taken out after baking 20-30min.Preferably, by temperature
Degree is set to 140 DEG C, is taken out after baking 25min.
Preferably, the step S6 is specifically included：
Specular removal fluorescent material is printed on LED core lamella using full-automatic fluorescent powder coating machine, phosphor powder layer is formed；
Put it into baking oven, by temperature setting between 145 DEG C -155 DEG C, taken out after baking 25-30min.Preferably,
It is 150 DEG C by temperature setting, is taken out after baking 28min.
Preferably, the step S7 is specifically included：
Silica gel is fixed on phosphor powder layer using full-automatic glue-dropping machine, forms layer of silica gel；
It is placed in baking oven, is 50 DEG C by temperature setting, is taken out after 60min.
The preparation method of the high light effect source component described in the present embodiment, preparation process is simple, without paster operation, is used
The light source assembly that the operation is prepared its whole light effect can reach more than 200lm/W.And the preparation method can reduce product
Product fraction defective, is greatly lowered production and preparation cost, is conducive to enterprise's popularization and application.
The foregoing description of the disclosed embodiments, enables professional and technical personnel in the field to realize or uses the present invention.
Various modifications to these embodiments will be apparent for those skilled in the art, as defined herein
General Principle can be realized in other embodiments without departing from the spirit or scope of the present invention.Therefore, the present invention
The embodiments shown herein is not intended to be limited to, and is to fit to and principles disclosed herein and features of novelty phase one
The scope most wide for causing.
Claims (10)
1. a kind of high light effect source component, it is characterised in that：Include layer of silica gel, phosphor powder layer, LED chip successively from top to bottom
Layer, silver paste line layer and substrate, wherein being provided with multiple pod apertures for radiating inside the substrate, the phosphor powder layer is used
Specular removal fluorescent material is prepared from.
2. high light effect source component as claimed in claim 1, it is characterised in that：The specular removal fluorescent material contains formula (I) chemical combination
Thing：
M1 yM2 5OzCx：M3 w……………………………………(I)
Wherein, 2.25≤x≤3.75,2.7≤y≤3,0.01 ＜ w≤0.3, and 4.5≤z≤7.5；
M1It is selected from the group：Sc3+、Y3+、La3+、Sm3+、Gd3+、Tb3+、Pm3+、Er3+、Lu3+, and combinations thereof；
M2It is selected from the group：Al3+、In3+、Ga3+, and combinations thereof；And
M3It is selected from the group：Tm3+、Bi3+、Tb3+、Ce3+、Eu3+、Mn3+、Er3+、Yb3+、Ho3+、Gd3+、Pr3+、Dy3+、Nd3+And its group
Close.
3. high light effect source component as claimed in claim 1 or 2, it is characterised in that：The specular removal fluorescent material is
Y2.98Al5O7.5C2.25：Tm0.02、Y2.95Al5O6C3：Bi0.05、Y2.94Al5O6C3：Tb0.06、Y2.95Al5O7.5C2.25：Ce0.05、
Y2.95Al5O6C3：Ce0.05、Y2.95Al5O4.5C3.75：Ce0.05、Y2.95Al5O6C3：Mn0.05、Y2.75GaAl4O6C3：Mn0.25、
Y2.94Al5O4.5C3.75：Bi0.06、Y2.94Al5O4.5C3.75：Tm0.06、Y2.94Al5O4.5C3.75：Ce0.04Tb0.02、
Y2.95Al5O4.5C3.75：Mn0.05、Y2.95Ga5O4.5C3.75：Mn0.05、Y2.94Al5O6C3：Bi0.06、Y2.94Al5O6C3：Mn0.06、
Y2.94Al5O6C3：Ce0.06、Lu1.72Gd1.2Al5O6C3：Ce0.05Pr0.03、Lu1.72Er1Ga5O4.5C3.75：Mn0.25Dy0.03、
Lu1.92Sc1Al5O6C3：Ce0.05Yb0.03、Sm1.92La1Al5O6C3：Ce0.05Ho0.03、Y2.32Gd0.6In1Al4O6C3：Ce0.05Nd0.03、
Or Lu1.95Pm1Al5O6C3：Ce0.05。
4. the high light effect source component as described in claim 1-3 is any, it is characterised in that：The substrate is ceramic substrate.
5. a kind of preparation method based on any described high light effect source components of claim 1-4, it is characterised in that including such as
Lower step：
S1：High-heat-conductivity ceramic material is formed into substrate by extruder or mould, being provided with multiple inside the substrate is used for
The pod apertures of radiating；
S2：Microwave solid is carried out to substrate；
S3：The pre-heat treatment and baking treatment are carried out to the substrate after solid；
S4：Conductive silver paste is printed on substrate, silver paste line layer is formed；
S5：One or more LED chip is fixed on silver paste line layer using bonder, forms LED core lamella；
S6：Specular removal fluorescent material is printed on LED core lamella, phosphor powder layer is formed；
S7：Silica gel is fixed on phosphor powder layer, layer of silica gel is formed.
6. the preparation method of high light effect source component as claimed in claim 5, it is characterised in that the step S2 is specifically wrapped
Include：
Substrate is put into industrial microwave oven, solid is carried out with the frequency of 2455MHZ, taken out after 3 minutes.
7. the preparation method of the high light effect source component as described in claim 5 or 6, it is characterised in that the step S3 is specific
Including：
Substrate after solid is put into baking oven, is 200 DEG C by temperature setting, taken out after preheating 8h, be put into high temperature oven；
It is 1600 DEG C by high temperature oven temperature setting, is taken out after baking 5h.
8. the preparation method of the high light effect source component as described in claim 5-7 is any, it is characterised in that the step S4 tools
Body includes：
Conductive silver paste is printed on substrate by circuit board press, silver paste line layer is formed；
It is put into baking oven, by temperature setting between 130 DEG C -150 DEG C, is taken out after baking 20-30min.
9. the preparation method of the high light effect source component as described in claim 5-8 is any, it is characterised in that the step S6 tools
Body includes：
Specular removal fluorescent material is printed on LED core lamella using full-automatic fluorescent powder coating machine, phosphor powder layer is formed；
Put it into baking oven, by temperature setting between 145 DEG C -155 DEG C, taken out after baking 25-30min.
10. the preparation method of the high light effect source component as described in claim 5-9 is any, it is characterised in that the step S7
Specifically include：
Silica gel is fixed on phosphor powder layer using full-automatic glue-dropping machine, forms layer of silica gel；
It is placed in baking oven, is 50 DEG C by temperature setting, is taken out after 60min.
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