CN106684046B - A kind of structure, method and the semiconductor devices of the hydrogenization reducing polycrystalline high resistant - Google Patents
A kind of structure, method and the semiconductor devices of the hydrogenization reducing polycrystalline high resistant Download PDFInfo
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- CN106684046B CN106684046B CN201510767834.XA CN201510767834A CN106684046B CN 106684046 B CN106684046 B CN 106684046B CN 201510767834 A CN201510767834 A CN 201510767834A CN 106684046 B CN106684046 B CN 106684046B
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Abstract
The present invention relates to structure, method and the semiconductor devices of a kind of hydrogenization for reducing polycrystalline high resistant, and the structure includes: polycrystalline high resistant chip；Sealing ring, around the chip, to surround the chip completely；Hole slot structure is located in the sealing ring and is arranged around the chip, and the hole slot structure includes hole slot and the material that can adsorb hydrogen that is filled in the hole slot, to reduce hydrogenization.The present invention not only prevents the diffusion and movement of hydrogen from source, increases the window that disk circulates in production line, greatly reduces the influence of hydrogenization, improves the stability of polycrystalline high resistant, and the present invention does not need to occupy and increase die area.
Description
Technical field
The present invention relates to semiconductor fields, in particular it relates to a kind of knot for the hydrogenization for reducing polycrystalline high resistant
Structure, method and semiconductor devices relate more specifically to a kind of structure of the reduction hydrogenization to polycrystalline high resistant stability influence, side
Method and semiconductor devices.
Background technique
With the sustainable development of integrated circuit technique, more devices will be integrated on chip, chip also will be using speed faster
Degree.Under the propulsion of these requirements, the geometric dimension of device will constantly reduce, and green wood is constantly used in the manufacturing process of chip
Material, new technology and new manufacturing process.
Wherein, polycrystalline silicon material is used widely in semiconductor field, and the resistivity of polysilicon, which depends not only on, mixes
It is miscellaneous, it is also related with grain structure.The presence of grain boundary hampers the olderly flowage of carrier, to increase resistivity.?
The influence being lightly doped in polysilicon is bigger, the polysilicon resistance rate being lightly doped several numbers higher than the monocrystalline silicon of identical doping concentration
Magnitude.Hydrogen reduces polysilicon resistance, abbreviation hydrogenization by the suspension bonding energy with grain boundary.The uneven meeting of hydrogenation
Lead to the unstable of polycrystalline resistor.
Polycrystalline high resistant is unstable at present, and resistance value fluctuation range is very big, by taking the high resistant of 3000 Ω of target resistance value as an example, actually does
Resistance value out is fluctuated from 2400 Ω and is differed to 3000 Ω, and desired design resistance value deviation maximum up to 20%, can not only make
It is low good to will also result in CP at PCM supergage.Causing the unstable very important factor of polycrystalline high resistant is exactly hydrogenization
It influences.
Weaken the method for hydrogenization at present mainly above polycrystalline high resistant plus one block of Titanium+aluminium is as baffle, leads to
Absorption of the Titanium to hydrogen is crossed, it is high after adsorption saturation to weaken hydrogenization, but by the limited sorption capacity of metal baffle
Resistance resistance value is easy to be lower very much, and is further continued for increasing the size of metal baffle, the blocking to hydrogenization on the basis of existing
Ability can not be remarkably reinforced again, and will increase invalid die area.
Therefore, how to reduce hydrogenization influences so that the stability raising of the polycrystalline high resistant becomes polycrystalline high resistant
At present the problem of urgent need to resolve.
Summary of the invention
A series of concept of reduced forms is introduced in Summary, this will in the detailed description section into
One step is described in detail.Summary of the invention is not meant to attempt to limit technical solution claimed
Key feature and essential features do not mean that the protection scope for attempting to determine technical solution claimed more.
The present invention in order to overcome the problems, such as presently, there are, provide it is a kind of reduce polycrystalline high resistant hydrogenization structure, packet
It includes:
Polycrystalline high resistant chip；
Sealing ring, around the chip, to surround the chip completely；
Hole slot structure is located in the sealing ring and is arranged around the chip, and the hole slot structure includes hole slot and fills out
The material that can adsorb hydrogen in the hole slot is filled, to reduce hydrogenization.
Optionally, the hole slot structure includes mutually nested inside and outside at least two and the hole slot of isolation setting.
Optionally, the material that can adsorb hydrogen includes Titanium.
Optionally, wherein the hole slot is the continuous and closed hole slot around chip setting.
Optionally, the hole slot is integrally square.
Optionally, the cross section of the hole slot is square.
The present invention also provides a kind of semiconductor devices including above-mentioned structure.
The present invention also provides a kind of methods of hydrogenization for reducing polycrystalline high resistant, and the method includes in polycrystalline high resistant
The surrounding of chip forms the step of sealing ring, and the hole slot structure around chip setting is formed in the sealing ring, described
Hole slot structure includes hole slot and the material that can adsorb hydrogen that is filled in the hole slot, to reduce hydrogenization.
Optionally, the hole slot structure includes mutually nested inside and outside at least two and the hole slot of isolation setting.
Optionally, the material that can adsorb hydrogen includes Titanium.
Optionally, wherein the hole slot is the continuous and closed hole slot around chip setting.
In order to overcome problems of the prior art, the present invention provides a kind of reduction hydrogenization is steady to polycrystalline high resistant
The structure and method of qualitative effect, in order to reduce the hydrogenization, in the peripheral providing holes slot structure of the polycrystalline high resistant, with
The polycrystalline high resistant is surrounded completely, there is the material that can adsorb hydrogen in the hole slot structure, such as Titanium, hydrogen can be strong by Ti
Strong absorption reduces the mobility of hydrogen, weakens hydrogenization from source.
The present invention not only prevents the diffusion and movement of hydrogen from source, increases the window that disk circulates in production line,
The influence for greatly reducing hydrogenization improves the stability of polycrystalline high resistant, and the present invention does not need to occupy and increase
Die area.
Detailed description of the invention
Following drawings of the invention is incorporated herein as part of the present invention for the purpose of understanding the present invention.Shown in the drawings of this hair
Bright embodiment and its description, device used to explain the present invention and principle.In attached drawing
Fig. 1 is the top view of the structure of the heretofore described hydrogenization for reducing polycrystalline high resistant；
Fig. 2 is the partial enlargement diagram of the structure of the heretofore described hydrogenization for reducing polycrystalline high resistant；
Fig. 3 is the partial enlargement diagram of the hole battle array structure in heretofore described seal ring structure；
Fig. 4 is the schematic diagram in seal ring structure different in the present invention to polycrystalline high resistant stability influence, and wherein A is hole
Battle array structure, B are hole slot structure；
Fig. 5 is hole battle array structure in the present invention in seal ring structure to the schematic diagram of polycrystalline high resistant stability influence, wherein C
It is different products with D；
Fig. 6 is hole slot structure in the present invention in seal ring structure to the schematic diagram of polycrystalline high resistant stability influence, wherein E
It is different products with F.
Specific embodiment
In the following description, a large amount of concrete details are given so as to provide a more thorough understanding of the present invention.So
And it is obvious to the skilled person that the present invention may not need one or more of these details and be able to
Implement.In other examples, in order to avoid confusion with the present invention, for some technical characteristics well known in the art not into
Row description.
It should be understood that the present invention can be implemented in different forms, and should not be construed as being limited to propose here
Embodiment.On the contrary, provide these embodiments will make it is open thoroughly and completely, and will fully convey the scope of the invention to
Those skilled in the art.In the accompanying drawings, for clarity, the size and relative size in the area Ceng He may not be inconsistent with actual size.
Same reference numerals indicate identical element from beginning to end.
It should be understood that when element or layer be referred to " ... on ", " with ... it is adjacent ", " being connected to " or " being coupled to " it is other
When element or layer, can directly on other elements or layer, it is adjacent thereto, be connected or coupled to other elements or layer, or
There may be elements or layer between two parties by person.On the contrary, when element is referred to as " on directly existing ... ", " with ... direct neighbor ", " directly
It is connected to " or " being directly coupled to " other elements or when layer, then there is no elements or layer between two parties.It should be understood that although can make
Various component, assembly units, area, floor and/or part are described with term first, second, third, etc., these component, assembly units, area, floor and/
Or part should not be limited by these terms.These terms be used merely to distinguish a component, assembly unit, area, floor or part with it is another
One component, assembly unit, area, floor or part.Therefore, do not depart from present invention teach that under, first element discussed below, portion
Part, area, floor or part are represented by second element, component, area, floor or part.
Spatial relation term for example " ... under ", " ... below ", " below ", " ... under ", " ... it
On ", " above " etc., herein can for convenience description and being used describe an elements or features shown in figure with
The relationship of other elements or features.It should be understood that spatial relation term intention further includes making other than orientation shown in figure
With the different orientation with the device in operation.For example, then, being described as " under other elements if the device in attached drawing is overturn
Face " or " under it " or " under it " elements or features will be oriented in other elements or features "upper".Therefore, exemplary art
Language " ... below " and " ... under " it may include upper and lower two orientations.Device can additionally be orientated (be rotated by 90 ° or its
It is orientated) and spatial description language as used herein correspondingly explained.
The purpose of term as used herein is only that description specific embodiment and not as limitation of the invention.Make herein
Used time, " one " of singular, "one" and " described/should " be also intended to include plural form, unless the context clearly indicates separately
Outer mode.It is also to be understood that term " composition " and/or " comprising ", when being used in this specification, determines the feature, whole
The presence of number, step, operations, elements, and/or components, but be not excluded for one or more other features, integer, step, operation,
The presence or addition of component, assembly unit and/or group.Herein in use, term "and/or" includes any of related listed item and institute
There is combination.
In order to thoroughly understand the present invention, detailed step and detailed structure will be proposed in following description, so as to
Illustrate technical solution of the present invention.Presently preferred embodiments of the present invention is described in detail as follows, however other than these detailed descriptions, this
Invention can also have other embodiments.
Embodiment one
The present invention provides a kind of structures of hydrogenization for reducing polycrystalline high resistant, as shown in Figure 1, the structure includes:
Polycrystalline high resistant chip 101；
Sealing ring 102, around the chip, to surround the chip completely；
Hole slot structure 103, be located at the sealing ring in and around the chip be arranged, the hole slot structure include hole slot and
The material that can adsorb hydrogen being filled in the hole slot, to reduce hydrogenization.
Wherein, various active devices and/or various integrated circuits can also be formed on the polycrystalline high resistant chip 101.
The inventor of the present application discovered that at present in device fabrication process in order to protect the polycrystalline high resistant chip 101 usually
Polycrystalline high resistant chip 101 periphery setting sealing ring 102, with prevent the polycrystalline high resistant chip 101 by moisture or its
He reduces device performance at pollutant effects, but the seal ring structure can not play the effect for reducing hydrogenization at present
Fruit.
The current seal ring structure is mostly as shown in Fig. 3, and hole battle array structure, the hole are formed in the sealing ring
Battle array structure includes several Kong Zhen being spaced apart from each other, and fills metal material in the Kong Zhen, even if filling can adsorb hydrogen
Metal material can not reduce hydrogenization well.Fig. 5 is the sealing ring reduction hydrogenization for including hole battle array structure
Effect, as seen in Figure 5, the resistance value of hole battle array deisgn product with the currency increase, reduction it is very fast, it is crucial
As soon as the every increase day of the currency of step, resistance value reduces 19-29 Ω, therefore the blocking effect of hole battle array structure is unsatisfactory.
Find that gust structure hole battle array structure is very poor to the barrier effect of hydrogen by analysis, the reason is that because hole battle array mesoporous and hole
Between SiO2There is no barrier effect to hydrogen, hydrogen be free to mobile and spread, therefore the blocking effect of hole battle array structure is not
It is ideal.
In this regard, being improved the seal ring structure, setting continuous for the hole slot in the sealing ring and being sealed
The hole slot around chip setting closed, i.e., the described hole slot is an annular groove and will not interrupt, and is continuously integrally disposed upon institute
It states around polycrystalline high resistant chip, to surround the polycrystalline high resistant chip completely, and filling can adsorb hydrogen in the hole slot
Material, such as Titanium, since Titanium has very strong adsorption capacity to hydrogen.Therefore, hydrogen can be stopped by sealing ring
Diffusion and movement, and then achieve the effect that reduce hydrogenization.
It should be noted that being the hydrogen for referring to cause hydrogenization, hydrogen ion or comprising hydrogen in hydrogen of the present invention
Mixed gas, or the general designation of the existing hydrogen that can cause hydrogenization otherwise, therefore described can adsorb hydrogen
Material refers to the material that can adsorb the above-mentioned various hydrogen that can cause hydrogenization, will not enumerate herein.
Wherein, the hole slot structure includes the hole slot of mutually nested setting inside and outside at least two.
Wherein, the material that can adsorb hydrogen includes Titanium.
Wherein, the hole slot entirety square in shape.
Wherein, the high resistant of the design of statistics hole slot and hole battle array deisgn product, discovery hole battle array deisgn product resistance value and stability are all
It is significantly worse than hole slot design, as shown in figure 4, wherein A is hole battle array structure, B is hole slot structure.This is because hole battle array structure is to hydrogen
Barrier effect it is poorer than hole slot result, hole battle array mesoporous and hole between SiO2There is no barrier effect to hydrogen, hydrogen be free to
Mobile and diffusion.Therefore, the blocking effect of hole battle array structure is unsatisfactory.But the hole slot structure described in the hole slot structure is in
Ring structure includes the polycrystalline high resistant chip completely, forms the barrier for protecting the polycrystalline high resistant chip, prevents hydrogenization
Generation.
In addition, hole battle array structure can reduce influence of the hydrogenization to high resistant to the greatest extent, disk circulates in production line
When, Titanium can absorb hydrogen from ambient enviroment.Therefore, in prior art solutions, when the disk currency is longer, titanium
It is easy for being saturated, hydrogenization cannot be effectively reduced again, to cause velocity of liquid assets on production line slower, resistance value is got over
Low phenomenon.
And after using hole slot design, this phenomenon can become very unobvious, and high value becomes more to increase and stablize.
Increase of the resistance value of hole slot deisgn product with the currency, very slow, the currency of committed step of reduction
Every to increase by one day, resistance value only reduces 5-8 Ω.As shown in fig. 6, designing the sealing ring of hole slot structure around tube core, can reduce
The influence of hydrogenization greatly improves the stability of polycrystalline high resistant, and then improves the performance of product.
As alternative embodiment, the area of protection Titanium can also be increased in the present invention, can slightly be increased
Add the blocking effect to hydrogenization, but effect is unobvious, and will increase the invalid of tube core, it can be according to specific need
It is selected.
In addition, increasing disk in the velocity of liquid assets of production line, the influence of hydrogenization can be reduced, but is limited by producing line
Practical capacity.
In order to overcome problems of the prior art, the present invention provides a kind of reduction hydrogenization is steady to polycrystalline high resistant
The structure and method of qualitative effect, in order to reduce the hydrogenization, in the peripheral providing holes slot structure of the polycrystalline high resistant, with
The polycrystalline high resistant is surrounded completely, there is the material that can adsorb hydrogen in the hole slot structure, such as Titanium, hydrogen can be strong by Ti
Strong absorption reduces the mobility of hydrogen, weakens hydrogenization from source.
The present invention not only prevents the diffusion and movement of hydrogen from source, increases the window that disk circulates in production line,
The influence for greatly reducing hydrogenization improves the stability of polycrystalline high resistant, and the present invention does not need to occupy and increase
Die area.
Embodiment two
The present invention also provides a kind of semiconductor devices, including structure described in embodiment one.The present invention also provides one
Kind electronic device, including above-mentioned semiconductor devices.
The electronic device of the present embodiment can be mobile phone, tablet computer, laptop, net book, game machine, TV
Any electronic product such as machine, VCD, DVD, navigator, camera, video camera, recording pen, MP3, MP4, PSP or equipment can also be
Any intermediate products including the semiconductor devices.The electronic device of the embodiment of the present invention above-mentioned is partly led due to having used
Body device, thus there is better performance.
Embodiment three
The present invention also provides a kind of reduction hydrogenizations to the method for polycrystalline high resistant stability influence, the method includes
The hole slot around chip setting is formed in the step of surrounding of polycrystalline high resistant chip forms sealing ring, the sealing ring
Structure, the hole slot structure includes hole slot and the material that can adsorb hydrogen that is filled in the hole slot, to reduce hydrogenization.
Wherein, various active devices and/or various integrated circuits can also be formed on the polycrystalline high resistant chip.
Wherein, the hole slot structure includes the hole slot of mutually nested setting inside and outside at least two.
Wherein, the material that can adsorb hydrogen includes Titanium.
Wherein, the hole slot entirety square in shape.
Wherein, hole slot structure can reduce influence of the hydrogenization to high resistant to the greatest extent, and disk circulates in production line
When, Titanium can absorb hydrogen from ambient enviroment, therefore in prior art solutions, when the disk currency is longer, titanium
It is easy for being saturated, hydrogenization cannot be effectively reduced again, to cause velocity of liquid assets on production line slower, resistance value is got over
Low phenomenon, and after using hole slot design, this phenomenon can become very unobvious, and what high value became more increases and stablize.
Increase of the resistance value of hole slot deisgn product with the currency, very slow, the currency of committed step of reduction
Every to increase by one day, resistance value only reduces 5-8 Ω, as shown in Figure 6.
Wherein the forming method of the hole slot may include the dielectric material patterned in the sealing ring, described in being formed
The hole slot of annular, then in the hole slot filling absorption hydrogen material, such as Titanium, wherein the patterning method and
Fill method can select method commonly used in the art, it is not limited to which a certain, details are not described herein.
In order to overcome problems of the prior art, the present invention provides a kind of reduction hydrogenization is steady to polycrystalline high resistant
The structure and method of qualitative effect, in order to reduce the hydrogenization, in the peripheral providing holes slot structure of the polycrystalline high resistant, with
The polycrystalline high resistant is surrounded completely, there is the material that can adsorb hydrogen in the hole slot structure, such as Titanium, hydrogen can be strong by Ti
Strong absorption reduces the mobility of hydrogen, weakens hydrogenization from source.
The present invention not only prevents the diffusion and movement of hydrogen from source, increases the window that disk circulates in production line,
The influence for greatly reducing hydrogenization improves the stability of polycrystalline high resistant, and the present invention does not need to occupy and increase
Die area.
It after the above step, can also include other correlation steps, details are not described herein again.Also, in addition to above-mentioned steps
Except, the preparation method of the present embodiment can also include other steps among above-mentioned each step or between different steps,
These steps can realize that details are not described herein again by various techniques in the prior art.
The present invention has been explained by the above embodiments, but it is to be understood that, above-described embodiment is only intended to
The purpose of citing and explanation, is not intended to limit the invention to the scope of the described embodiments.Furthermore those skilled in the art
It is understood that the present invention is not limited to the above embodiments, introduction according to the present invention can also be made more kinds of member
Variants and modifications, all fall within the scope of the claimed invention for these variants and modifications.Protection scope of the present invention by
The appended claims and its equivalent scope are defined.
Claims (9)
1. a kind of structure for the hydrogenization for reducing polycrystalline high resistant, comprising:
Polycrystalline high resistant chip；
Sealing ring, around the chip, to surround the chip completely；
Hole slot structure is located in the sealing ring, is continuous and closed around chip setting, and the hole slot structure includes
Hole slot and the material that can adsorb hydrogen being filled in the hole slot, to reduce hydrogenization.
2. structure according to claim 1, which is characterized in that the hole slot structure includes mutually nested inside and outside at least two
And the hole slot of isolation setting.
3. structure according to claim 1, which is characterized in that the material that can adsorb hydrogen includes Titanium.
4. structure according to claim 1, which is characterized in that the hole slot is integrally square.
5. structure according to claim 1 or 4, which is characterized in that the cross section of the hole slot is square.
6. a kind of semiconductor devices including structure described in one of claim 1 to 5.
7. a kind of method for the hydrogenization for reducing polycrystalline high resistant, close the method includes being formed in the surrounding of polycrystalline high resistant chip
The step of seal ring, is formed with the continuous and closed hole slot structure around chip setting, the hole in the sealing ring
Slot structure includes hole slot and the material that can adsorb hydrogen that is filled in the hole slot, to reduce hydrogenization.
8. the method according to the description of claim 7 is characterized in that the hole slot structure includes mutually nested inside and outside at least two
And the hole slot of isolation setting.
9. the method according to the description of claim 7 is characterized in that the material that can adsorb hydrogen includes Titanium.
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Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1326591A (en) * | 1998-11-13 | 2001-12-12 | 艾利森电话股份有限公司 | Polysilicon resistor and method of producing it |
| CN103050424A (en) * | 2012-08-17 | 2013-04-17 | 上海华虹Nec电子有限公司 | Protecting ring for semiconductor device |
| EP2863430A2 (en) * | 2002-07-31 | 2015-04-22 | Fujitsu Semiconductor Limited | Semiconductor device |
Family Cites Families (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP5090696B2 (en) * | 2006-09-12 | 2012-12-05 | ルネサスエレクトロニクス株式会社 | Semiconductor device |
| JP5630027B2 (en) * | 2010-01-29 | 2014-11-26 | ソニー株式会社 | Solid-state imaging device, manufacturing method thereof, electronic apparatus, and semiconductor device |
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Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1326591A (en) * | 1998-11-13 | 2001-12-12 | 艾利森电话股份有限公司 | Polysilicon resistor and method of producing it |
| EP2863430A2 (en) * | 2002-07-31 | 2015-04-22 | Fujitsu Semiconductor Limited | Semiconductor device |
| CN103050424A (en) * | 2012-08-17 | 2013-04-17 | 上海华虹Nec电子有限公司 | Protecting ring for semiconductor device |
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