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CN106660333A - Protective-coating-forming sheet and method for manufacturing semiconductor chip provided with protective coating - Google Patents

Protective-coating-forming sheet and method for manufacturing semiconductor chip provided with protective coating Download PDF

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Publication number
CN106660333A
CN106660333A CN201580044562.9A CN201580044562A CN106660333A CN 106660333 A CN106660333 A CN 106660333A CN 201580044562 A CN201580044562 A CN 201580044562A CN 106660333 A CN106660333 A CN 106660333A
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CN
China
Prior art keywords
diaphragm
film
laminated body
chip
workpiece
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
CN201580044562.9A
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Chinese (zh)
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CN106660333B (en
Inventor
山本大辅
佐伯尚哉
米山裕之
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Lintec Corp
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Lintec Corp
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Publication date
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Publication of CN106660333A publication Critical patent/CN106660333A/en
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Publication of CN106660333B publication Critical patent/CN106660333B/en
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Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/6835Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
    • H01L21/6836Wafer tapes, e.g. grinding or dicing support tapes
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B23MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23KSOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K26/00Working by laser beam, e.g. welding, cutting or boring
    • B23K26/50Working by transmitting the laser beam through or within the workpiece
    • B23K26/53Working by transmitting the laser beam through or within the workpiece for modifying or reforming the material inside the workpiece, e.g. for producing break initiation cracks
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B32LAYERED PRODUCTS
    • B32BLAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
    • B32B27/00Layered products comprising a layer of synthetic resin
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B32LAYERED PRODUCTS
    • B32BLAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
    • B32B27/00Layered products comprising a layer of synthetic resin
    • B32B27/06Layered products comprising a layer of synthetic resin as the main or only constituent of a layer, which is next to another layer of the same or of a different material
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B32LAYERED PRODUCTS
    • B32BLAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
    • B32B7/00Layered products characterised by the relation between layers; Layered products characterised by the relative orientation of features between layers, or by the relative values of a measurable parameter between layers, i.e. products comprising layers having different physical, chemical or physicochemical properties; Layered products characterised by the interconnection of layers
    • B32B7/04Interconnection of layers
    • B32B7/12Interconnection of layers using interposed adhesives or interposed materials with bonding properties
    • CCHEMISTRY; METALLURGY
    • C09DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09JADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
    • C09J7/00Adhesives in the form of films or foils
    • C09J7/20Adhesives in the form of films or foils characterised by their carriers
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/50Assembly of semiconductor devices using processes or apparatus not provided for in a single one of the subgroups H01L21/06 - H01L21/326, e.g. sealing of a cap to a base of a container
    • H01L21/56Encapsulations, e.g. encapsulation layers, coatings
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/77Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
    • H01L21/78Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/83Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
    • H01L2224/8319Arrangement of the layer connectors prior to mounting
    • H01L2224/83192Arrangement of the layer connectors prior to mounting wherein the layer connectors are disposed only on another item or body to be connected to the semiconductor or solid-state body

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  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Optics & Photonics (AREA)
  • Chemical & Material Sciences (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Manufacturing & Machinery (AREA)
  • Power Engineering (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Organic Chemistry (AREA)
  • Oil, Petroleum & Natural Gas (AREA)
  • General Chemical & Material Sciences (AREA)
  • Plasma & Fusion (AREA)
  • Mechanical Engineering (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Dicing (AREA)
  • Application Of Or Painting With Fluid Materials (AREA)
  • Laser Beam Processing (AREA)
  • Laminated Bodies (AREA)
  • Adhesive Tapes (AREA)
  • Formation Of Insulating Films (AREA)
  • Paints Or Removers (AREA)
  • Adhesives Or Adhesive Processes (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)

Abstract

A protective-coating-forming sheet (3) provided with a first support sheet (4) and a protective-coating formation film (1) layered on a first surface side of the first support sheet (4), the protective-coating formation film (1) comprising a curable material, and the protective-coating formation film (1) having the following characteristics: when the protective-coating formation film (1) is cured and a protective coating is obtained, the breaking strain of the protective coating at 50 DEG C is 20% or less, and the breaking stress thereof at 50 DEG C is 2.0*107 Pa or less.

Description

The manufacture method of diaphragm formation piece and the semiconductor chip with diaphragm
Technical field
The present invention relates to machining object obtained from being processed in workpiece such as semiconductor wafers or to the workpiece is (for example Semiconductor chip) on form the diaphragm formation piece of diaphragm.
The application advocates that the Japanese Patent Application 2014-169266 that August in 2014 files an application in Japan on the 22nd and Japan are special It is willing to the priority of No. 2014-169267, here cites its content.
Background technology
In recent years, the system of semiconductor device has been carried out using the Method for Installation for being referred to as so-called upside-down mounting (face down) mode Make.In the method, when the semiconductor chip with the circuit face for defining the electrodes such as projection is installed, by semiconductor chip Circuit face side joint is together in chip carrying portions such as lead frames.Thus, become not forming what the semiconductor chip rear side of circuit was exposed Structure.
Patent document 1~3 individually discloses and the diaphragm that can form said protection film is defined on bonding sheet is formed The diaphragm of layer (that is, diaphragm forms film) forms/cuts one matrix (that is, diaphragm formation piece).For the diaphragm Formed/cut for one matrix, said protection film is formed film and solidified by heating, form said protection film.That is, adopt One matrix is formed/cut with said protection film, the cutting of semiconductor wafer can be carried out and semiconductor chip is formed to protect Both films, can obtain the semiconductor chip with diaphragm.
On the other hand, when by the workpiece such as semiconductor wafer machining object of the manufacture comprising plates such as semiconductor chips, with Toward generally on one side being blown liquid to clean etc. to workpiece, while carrying out obtaining plates with rotary cutter cut-out workpiece Cutting knife cutting processing.But, employing in recent years can be divided into the Stealth Dicing of plates (stealth is cut with dry type Cut) (registration mark, same as below) processing.
For example, Patent Document 3 discloses stealthy patterning method, the method includes:Lamination bonding sheet (by base material and will be glued 2 layers of the bonding sheet lamination that mixture layer is formed is formed) it is pasted on very thin semiconductor wafer, from lamination bonding sheet side across lamination Bonding sheet is internally formed modified portion to semiconductor wafer illumination laser in semiconductor wafer, then carries out spread sheet to bonding sheet (expand), thus, semiconductor wafer is split along line of cut and is produced semiconductor chip.
Prior art literature
Patent document
Patent document 1:Japanese Unexamined Patent Publication 2012-33637 publications
Patent document 2:Japanese Unexamined Patent Publication 2011-151362 publications
Patent document 3:No. 3762409 publications of Japanese Patent No.
The content of the invention
Problems to be solved by the invention
As described above, in stealthy cutting due to carrying out spread sheet and dividing semiconductor wafer to bonding sheet, therefore sometimes It is preferably placed at the component between bonding sheet and semiconductor wafer to be also divided in the same manner as semiconductor wafer.It is in such component In the case that diaphragm forms film, in order to realize suitable segmentation, also sometimes film is formed to diaphragm and cooled down.
It is an object of the invention to provide a kind of possess the diaphragm formation piece that diaphragm forms film, it is carrying out stealth During cutting, the component between positioned at the workpiece such as bonding sheet and semiconductor wafer is to form the diaphragm that film is formed by diaphragm In the case of, diaphragm during spread sheet is carried out to bonding sheet can be by appropriate Ground Split.In addition, as other side, the mesh of the present invention Be provide the machining objects such as the semiconductor chip with diaphragm are manufactured with piece using the diaphragm formation method.
The method of solve problem
The present invention for providing to achieve these goals includes in the following manner.
(1) a kind of diaphragm formation piece, its first face for possessing the first support chip and being stacked in above-mentioned first support chip The diaphragm of side forms film, wherein, the diaphragm forms film and is formed by curable material, the diaphragm form film solidification and Into fracture deformation of the diaphragm at 50 DEG C be less than 20% and the fracture strength at 50 DEG C is 2.0 × 107Below Pa.
(2) the diaphragm formation piece described in above-mentioned (1), wherein, storage modulus of the diaphragm at 25 DEG C is 3.0 ×109More than Pa.
(3) the diaphragm formation piece described in above-mentioned (1) or (2), wherein, loss angle of the diaphragm at 25 DEG C is just Value is cut for less than 0.4.
(4) the diaphragm formation piece any one of above-mentioned (1)~(3), wherein, the diaphragm is to wavelength The transmissivity of the light of 1064nm is more than 40%.
(5) the diaphragm formation piece any one of above-mentioned (1)~(4), wherein, the diaphragm formation has with piece Standby second support chip, second support chip is stacked in the diaphragm and forms the contrary with towards the face of first support chip of film Face side.
(6) a kind of manufacture method of the chip with diaphragm, the method includes:
Adhering processes, the said protection film for possessing the diaphragm formation piece any one of above-mentioned (1)~(5) Formed film with showing out towards the face opposition side of first support chip, the face exposed and the one side of workpiece are glued Patch, so as to the first laminated body for obtaining possessing the diaphragm formation piece and the workpiece;
First curing process, the diaphragm shape for possessing the diaphragm formation piece of first laminated body Film forming solidifies and obtains the diaphragm;
First segmentation process, in the diaphragm shape of first laminated body for making to have passed through first curing process Into the diaphragm possessed with piece temperature be maintained in the range of 40 DEG C to 70 DEG C in the state of, the diaphragm is formed First support chip possessed with piece is stretched, and the diaphragm is split together with the workpiece, obtains Two laminated bodies, second laminated body be the laminated body of the workpiece and the diaphragm be divided to form it is multiple with protection The chip of film is configured on a face of first support chip;And
First pickup process, the plurality of chip with diaphragm that second laminated body is possessed is respectively from institute State and separated on the first support chip, obtain as the chip with diaphragm described in machining object,
Wherein, before first segmentation process is started, following modified layer formation process are carried out:It is set in focusing on The mode of the focus of the inside workpiece irradiates the laser of region of ultra-red, and in the inside workpiece modified layer is formed.
(7) a kind of manufacture method of the chip with diaphragm, the method includes:
Lamination procedure, enters to exercise the above-mentioned guarantor that the diaphragm formation piece any one of above-mentioned (1)~(5) possesses Cuticula form film with showing out towards the face opposition side of first support chip, by the one side of the face exposed and workpiece Paste, and first support chip of the diaphragm formation piece is formed into stripping on film from the diaphragm, so as to To the third layer stack body for possessing the workpiece and diaphragm formation film;
Second curing process, makes the diaphragm that the third layer stack body possesses form film solidification and obtain the guarantor Cuticula;
Second adhering processes, will be provided with the 3rd base material and are stacked in the 3rd adhesive phase of a surface side of the 3rd base material Processing piece the 3rd adhesive phase side face and the third layer stack body after second curing process The face laminating of the diaphragm side, so as to the 4th laminated body for obtaining possessing the processing piece and the third layer stack body;
Second segmentation process, in the temperature of the diaphragm for possessing the 4th laminated body 40 DEG C to 70 are maintained at In the state of in the range of DEG C, the processing that the 4th laminated body possesses is stretched with piece, by the diaphragm with The workpiece is split together, obtains the 5th laminated body, and the 5th laminated body is the folded of the workpiece and the diaphragm Multiple chips with diaphragm that layer body is divided to form are configured on a face of the processing piece;And
Second pickup process, the plurality of chip with diaphragm that the 5th laminated body is possessed is respectively from institute State and separated on processing piece, obtain as the chip with diaphragm described in machining object,
Wherein, before second segmentation process is started, following modified layer formation process are carried out:It is set in focusing on The mode of the focus of the inside workpiece irradiates the laser of region of ultra-red, and in the inside workpiece modified layer is formed.
That is, the present application includes in the following manner.
[1] a kind of diaphragm formation piece, it possesses the first support chip and is stacked in the first face of first support chip The diaphragm of side forms film, wherein,
The diaphragm forms film and is formed by curable material,
The diaphragm forms film and has following characteristic:
When making the diaphragm formation film be solidified to form diaphragm, fracture deformation of the diaphragm at 50 DEG C is Less than 20%, and the fracture strength at 50 DEG C is 2.0 × 107Below Pa.
[2] the diaphragm formation piece described in above-mentioned [1], wherein, the diaphragm forms film and also has following characteristic:
Storage modulus of the diaphragm at 25 DEG C is 3.0 × 109More than Pa.
[3] the diaphragm formation piece described in above-mentioned [1] or [2], wherein, the diaphragm forms film and also has following spy Property:
Loss tangent of the diaphragm at 25 DEG C is less than 0.4.
[4] the diaphragm formation piece any one of above-mentioned [1]~[3], wherein, the diaphragm forms film also to be had There is following characteristic:
The diaphragm is more than 40% to the transmissivity of the light of wavelength 1064nm.
[5] the diaphragm formation piece any one of above-mentioned [1]~[4], wherein, the diaphragm formation piece is also Possess the second support chip, second support chip be stacked in that the diaphragm forms film with the face phase towards first support chip Reverse side.
[6] a kind of manufacture method of the chip with diaphragm, the method includes:
Adhering processes, the diaphragm for possessing the diaphragm formation piece any one of above-mentioned [1]~[5] Formed film with showing out towards the face opposition side of first support chip, the face exposed and the one side of workpiece are glued Patch, so as to the first laminated body for obtaining possessing the diaphragm formation piece and the workpiece;
First curing process, by making first laminated body in the diaphragm formed film solidification and obtain the guarantor Cuticula;
First segmentation process, in the diaphragm of first laminated body that makes to have passed through first curing process In the state of temperature is maintained in the range of 40 DEG C to 70 DEG C, stretch first support chip, by the diaphragm and the work Part is split together, obtains the second laminated body, second laminated body be the workpiece and the diaphragm laminated body with Multiple chips with diaphragm that in a thickness direction mode of generation section is divided to form are configured in described first On one face of blade;And
First pickup process, the plurality of chip with diaphragm that second laminated body is possessed is respectively from institute State and separated on the first support chip, obtain the chip with diaphragm as machining object,
Wherein, before first segmentation process is started, comprising following modified layer formation process:It is set in focusing on The mode of the focus of the inside workpiece irradiates the laser of region of ultra-red, and in the inside workpiece modified layer is formed.
[7] a kind of manufacture method of the chip with diaphragm, the method includes:
Lamination procedure, the diaphragm for possessing the diaphragm formation piece any one of above-mentioned [1]~[5] Formed film with showing out towards the face opposition side of first support chip, the face exposed and the one side of workpiece are glued Patch, and first support chip is formed into stripping on film from the diaphragm, so as to obtain possessing the workpiece and the guarantor Cuticula forms the third layer stack body of film;
Second curing process, forms film solidification and obtains institute by the diaphragm for possessing the third layer stack body State diaphragm;
Second adhering processes, will be provided with the 3rd base material and are stacked in the 3rd adhesive phase of a surface side of the 3rd base material The lamination of processing piece have the face of the 3rd adhesive phase side with the described 3rd after second curing process The face laminating of the diaphragm side of laminated body, the 4th so as to obtain possessing the processing piece and the third layer stack body is folded Layer body;
Second segmentation process, in the temperature of the diaphragm for possessing the 4th laminated body 40 DEG C to 70 are maintained at In the state of in the range of DEG C, make the processing piece stretching that the 4th laminated body possesses, by the diaphragm with it is described Workpiece is split together, obtains the 5th laminated body, and the 5th laminated body is the laminated body of the workpiece and the diaphragm The multiple chips with diaphragm being divided to form in the way of producing section in a thickness direction are configured in the processing With on a face of piece;And
Second pickup process, the plurality of chip with diaphragm that the 5th laminated body is possessed is respectively from institute State and separated on processing piece, obtain as the chip with diaphragm described in machining object,
Wherein, before second segmentation process is started, comprising following modified layer formation process:It is set in focusing on The mode of the focus of the inside workpiece irradiates the laser of region of ultra-red, and in the inside workpiece modified layer is formed.
The effect of invention
Diaphragm formation piece of the invention, though by said protection film formed the diaphragm that film formed be located at it is viscous The component between the workpiece such as piece and semiconductor wafer is closed, also can be when spread sheet be carried out to bonding sheet in the case of stealthy cutting Diaphragm is suitably split.Therefore, it is possible to stably manufacture the semiconductor chip with diaphragm.
Description of the drawings
[Fig. 1] is the profile of the diaphragm formation piece for schematically showing an embodiment of the invention.
[Fig. 2] is that the stripping film that makes for schematically showing an embodiment of the invention is shelled from diaphragm formation piece From state profile.
[Fig. 3] is the manufacture method institute of the chip with diaphragm for schematically showing an embodiment of the invention The profile of the first laminated body obtained from the first adhering processes for possessing.
[Fig. 4] is the manufacture method institute of the chip with diaphragm for schematically showing an embodiment of the invention The profile of the second laminated body obtained from the first segmentation process for possessing.
[Fig. 5] is the manufacture method institute of the chip with diaphragm for schematically showing an embodiment of the invention What is possessed implements the profile of the state of the first pickup process.
[Fig. 6] is the profile of the diaphragm formation piece for schematically showing other embodiments of the present invention.
[Fig. 7] is the manufacture method institute of the chip with diaphragm for schematically showing other embodiments of the present invention The profile of third layer stack body obtained from lamination procedure for possessing.
[Fig. 8] is the manufacture method institute of the chip with diaphragm for schematically showing other embodiments of the present invention The profile of the 4th laminated body obtained from the second adhering processes for possessing.
[Fig. 9] is the manufacture method institute of the chip with diaphragm for schematically showing other embodiments of the present invention The profile of the 5th laminated body obtained from the second segmentation process for possessing.
[Figure 10] is the manufacture method of the chip with diaphragm for schematically showing other embodiments of the present invention What is possessed implements the profile of the state of the second pickup process.
[Figure 11] is the profile of the diaphragm formation piece for schematically showing one of other embodiments of the present invention.
Symbol description
1 ... diaphragm forms film
3rd, 3A, 3B ... diaphragm formation piece
4 ... support chips
41 ... base materials
42 ... adhesive phases
5 ... fixture adhesive phases
6 ... stripping films
7 ... semiconductor wafers
8 ... ring-type frames
9 ... the chips with diaphragm
10 ... first laminated bodies
11 ... second laminated bodies
12 ... third layer stack bodies
13 ... processing pieces
131 ... the 3rd adhesive phases
132 ... the 3rd base materials
14 ... the 4th laminated bodies
R ... annular components
P ... ejector pins
C ... vacuum suction collet chucks (collet)
Specific embodiment
Below, embodiments of the present invention are illustrated.
Fig. 1 is the profile of the diaphragm formation piece of an embodiment of the invention.As shown in figure 1, this embodiment party The composition of the diaphragm formation piece 3 of formula is:The one side for possess the first support chip 4, being stacked in the first support chip 4 is (described below " the first face ";Upper surface in Fig. 1) diaphragm of side forms film 1 and fixture adhesive phase 5, the fixture adhesive phase 5 are stacked in the edge part with the face towards the face opposition side of the first support chip 4 that diaphragm forms film 1.Fixture adhesive phase 5 It is for by the bonding layer of the fixtures such as diaphragm formation piece 3 and ring-type frame.In addition, the diaphragm formation piece of present embodiment 3 form (with the opposition side of the first support chip 4) on film 1 and fixture adhesive phase 5 in diaphragm possesses stripping film 6.The stripping film 6 The piece that removing is stripped when using diaphragm formation piece 3, diaphragm formation with piece 3 it is not necessary to composition will Element.
That is, as an embodiment of the invention diaphragm formation piece a mode, it is included:First supports Piece 4, the diaphragm of the surface side for being stacked in the first support chip 4 form film 1 and be stacked in diaphragm formed film 1 with towards the The fixture adhesive phase 5 of the edge part in the face of the face opposition side of one support chip 4 and as needed be stacked in diaphragm shape The stripping film 6 of film forming 1 and fixture on adhesive phase 5.
The diaphragm formation piece 3 of present embodiment is used to be pasted on above-mentioned workpiece and keep above-mentioned work when workpiece is processed Part, and form diaphragm on above-mentioned workpiece or in the machining object obtained from being processed to above-mentioned workpiece.The protection Film forms film 1 and constitutes by the diaphragm after solidifying.
Used as an example, the diaphragm formation of present embodiment is used in the semiconductor wafer as workpiece with piece 3 Keep forming diaphragm on semiconductor wafer, and the semiconductor chip obtained from by cutting during cutting processing, but not It is defined in this.
The diaphragm formation piece 3 of present embodiment is usually formed strip and is rolled into a roll, can be with roll-to-roll (roll To roll) mode uses.
1. support chip
As an embodiment of the invention diaphragm formation piece 3 involved by the first support chip 4 possess base material 41 and adhesive phase 42 and constitute, described adhesive layer 42 be layered on base material 41 a surface side (that is, lamination diaphragm formed film 1 side;It is in FIG upside).Wherein, the face that the lamination diaphragm of the first support chip 4 forms the side of film 1 is referred to as into " first Face ", by the face (lower surface in Fig. 1) of its opposition side be referred to as " the second face ".In the first support chip 4, adhesive phase 42 is folded In the first surface side of the first support chip 4, base material 41 is layered on the second surface side of the first support chip 4 to layer.
1-1. base materials
As the base material 41 of the diaphragm formation involved by piece 3 of an embodiment of the invention, as long as generally make For the base material that the base material of the used bonding sheet of stealthy cutting is used, it is not particularly limited.Base material 41 can have individual layer Structure, it is possible to have laminated construction.It is the film that diaphragm is formed by heating that diaphragm forms film 1, is being carried out for shape In the case of base material 41 is also heated when forming the heating of film 1 into the diaphragm of diaphragm, it is desirable to which base material 41 is after the heating Also the base material of (for example can enumerate can suitably carry out spread sheet etc.) can suitably be used.
Consider from above-mentioned viewpoint, the fusing point of base material 41 is preferably 90~180 DEG C, particularly preferably 100~160 DEG C, enters one Step is preferably 110~150 DEG C.
The method of the fusing point of adjustment base material 41 is not particularly limited, and in general, can mainly pass through the tree to be used The fusing point of fat material is being adjusted.In addition, by the different various kinds of resin material of mixed melting point, by various of monomer copolymerization, Base material 41 can be adjusted to any fusing point.
Storage modulus of the base material 41 at 130 DEG C is preferably 1~100MPa.It is upper by making the storage modulus at 130 DEG C State scope, it can be ensured that the heat resistance of base material 41, and can reduce carrying out the first support chip 4 producing unfavorable condition during spread sheet Possibility.From have both improve base material 41 heat resistance and easily the first support chip 4 is carried out from the viewpoint of both spread sheets, base Storage modulus of the material 41 at 130 DEG C is more preferably 2~80MPa, particularly preferably 5~50MPa.It should be noted that above-mentioned Shown in the assay method of storage modulus test example as hereinafter described.
The method of storage modulus of the adjustment base material 41 at 130 DEG C is not particularly limited, and in general, mainly can pass through The storage modulus of the resin material to be used is being adjusted.In addition, in general, even identical chemical constitution, Exist molecular weight it is big when the tendency that increases of storage modulus, exist due to crosslinking, narrow molecular weight distribution and storage modulus increases Tendency.According to such tendency, base material 41 can be adjusted to arbitrary storage modulus.
Used in stealthy cutting etc. in the case of the laser of wavelength 1064nm, base material 41 is after the heating to wavelength 1064nm The transmissivity of light be preferably more than 40% and less than 100%, more preferably more than 50% and less than 99.9%, particularly preferably For more than 60% and less than 99.5%.It is after the heating above-mentioned model to the transmissivity of the light of wavelength 1064nm by making base material 41 Enclose, the segmentation using the workpiece of stealthy cutting is excellent.
In addition, for for laser-marking relative to diaphragm etc., in the case of the laser using wavelength 532nm, Base material 41 is preferably after the heating more than 0% and less than 40% to the light transmittance of wavelength 532nm, more preferably 0.01% with It is upper and less than 35%, particularly preferably more than 0.05% and less than 30%.By making base material 41 after the heating to wavelength 532nm's Light transmittance is above range, and laser printing is excellent.
As the specific example of the resin film for constituting base material 41, can enumerate:Low density polyethylene (LDPE) (LDPE) film, straight chain are low Polyethylene film, polypropylene screen, the ethylene-propylene copolymers such as density polyethylene (LLDPE) film, high density polyethylene (HDPE) (HDPE) film Film, polybutene film, polybutadiene film, polymethylpentene film, ethylene-norbornene copolymer film, norbornene resin film etc. gather Olefines film;Vinyl-vinyl acetate copolymer film, ethene-(methyl) acrylic copolymer film, ethene-(methyl) acrylic acid The ethene copolymer film such as ester copolymer film;The polyvinyl chloride films such as polychloroethylene film, vinyl chloride copolymer film;Poly- terephthaldehyde The polyesters films such as sour glycol ester film, polybutylene terephthalate (PBT) film;Polyurethane film;Polyimide film;Polystyrene film; Polycarbonate membrane;Fluororesin film etc..Alternatively, it is also possible to using Modified Membrane as their cross linking membrane, ionomeric membrane.Can be with It is by stack membrane obtained from multiple above-mentioned film laminations.
It should be noted that " (methyl) acrylic acid " in this specification refers to the meaning of both acrylic acid and methacrylic acid Think.Other similar terms are similarly.
In the middle of above-mentioned, preferred polyolefm class film;More preferably polyethylene film, polypropylene screen and ethylene-propylene copolymer film;It is special Other optimal ethylene-propylene copolymer film.Using these resin films, above-mentioned physical property is readily satisfied, it is particularly common in ethylene-propylene In the case of polymers film, by the copolymerization ratio for adjusting vinyl monomer and propylene monomer, above-mentioned physical property is readily satisfied.In addition, from From the viewpoint of workpiece stickup property, chip fissility, it is also preferred that these resin films.
For above-mentioned resin film, in order to improve and being stacked on the adaptation of the adhesive phase 42 on its surface, can be with root Implement to be processed using the surface treatment or primary coat of oxidizing process, further provided for contouring method etc. in its one or two sides according to hope.As above-mentioned oxygen Change method, can enumerate for example:Corona discharge Treatment, plasma discharge process, chromium oxidation processes (wet method), flame treatment, heat Wind process, ozone, ultraviolet treatment with irradiation etc..In addition, as further provided for contouring method, can enumerate for example:Sand-blast, spraying plating facture Deng.
It should be noted that base material 41 can with above-mentioned resin film containing colouring agent, fire retardant, plasticizer, anti-quiet The various additives such as electric agent, lubricant, filler.
As long as the thickness of base material 41 can suitably play a role in each operation using diaphragm formation piece 3, It is not particularly limited, preferably 20 μm~450 μm, more preferably 25 μm~400 μm, particularly preferably 50 μm~350 μm.
" thickness " is the thickness that any 5 positions are determined with electrolimit gauge, and the value represented with its mean value.
1-2. adhesive phases
As an embodiment of the invention diaphragm formation piece 3 involved by first support chip 4 possess Adhesive phase 42 can be made up of non-energy line curing adhesive, it is also possible to be made up of energy ray-curable adhesive.As Non-energy line curing adhesive, the adhesive preferably with desired bonding force and releasable, it is, for example possible to use third Alkene acrylic binder, rubber adhesive, polysiloxane-based adhesive, polyurethane binding, polyester adhesive, polyethylene Base ethers adhesive etc..Wherein, preferably high with the adaptation that diaphragm forms film 1 acrylic adhesives.
On the other hand, for energy ray-curable adhesive, due to irradiating in energy line under bonding force reduce, because This, if using energy ray-curable adhesive, when wanting to make workpiece or machining object separate with the first support chip 4, Ke Yitong Cross energy line irradiation and easily separated.
As energy line, ultraviolet, electron beam etc. is usually used.The exposure of energy line because of the species of energy line not Together, for example in the case of ultraviolet, 50~1000mJ/cm is preferably with quantometer2, more preferably 100~500mJ/cm2.Separately Outward, in the case of electron beam, preferably 10~1000krad or so.
In the case where adhesive phase 42 is formed by energy ray-curable adhesive, diaphragm is formed with the bonding in piece 3 Oxidant layer 42 is preferably cured.The usual elastic modelling quantity of material obtained from energy ray-curable adhesive is solidified is high and surface Flatness is high, therefore the diaphragm contacted in the cured portion for making with formed by the material forms film 1 and is solidified to form protection During film, the flatness (glossiness) on the surface of the said protection film contacted with the cured portion of above-mentioned adhesive phase 42 increases, and makees For the diaphragm of chip, excellent appearance.In addition, when the diaphragm high to surface smoothness implements laser printing, the printing Identification is improved.
The energy ray-curable adhesive for constituting adhesive phase 42 can be made with the polymer with energy ray-curable For the adhesive of principal component;Can also be with the not polymer with energy ray-curable and selected from many of energy ray-curable Adhesive of the mixture of at least one composition in functional monomer and oligomer as principal component.
Hereinafter, for energy ray-curable adhesive using the polymer with energy ray-curable as principal component in the case of Illustrate.
It should be noted that " principal component " mentioned here is referred to, relative to the gross mass of energy ray-curable adhesive Comprising the meanings more than 60 mass %.
Polymer with energy ray-curable has preferably imported the functional group with energy ray-curable (i.e., in side chain Energy ray-curable group) (methyl) acrylate (co) polymer (A) (hereinafter sometimes referred to " and energy-line solidifying type be polymerized Thing (A) ").The energy-line solidifying type polymer (A) preferably has (methyl) acrylic copolymer containing monomer's unit Obtained from thing (a1) reacts with the compound containing unsaturated group (a2) with the substituent in the functional group to be bonded Polymer.
Acrylic copolymer (a1) includes at least and comes from the construction unit containing monomer and come from (methyl) The construction unit of acrylate monomer or derivatives thereof.
As it is above-mentioned come from the construction unit containing monomer containing monomer, preferably have in intramolecular poly- The monomer of the functional groups such as the double bond and hydroxyl, amino, substituted-amino, epoxy radicals of conjunction property.
As the above-mentioned more specifically example containing monomer, can enumerate:(methyl) acrylic acid 2- hydroxy methacrylates, (methyl) acrylic acid 2- hydroxy propyl esters, (methyl) acrylic acid 3- hydroxy propyl esters, (methyl) acrylic acid 4- hydroxybutyls etc., these changes Compound can be used alone, it is also possible to combines two or more and uses.
As above-mentioned (methyl) acrylate monomer, it is possible to use the carbon number of alkyl is 1~20 (methyl) propylene Acid alkyl ester, the carbon number of alkyl are 3~11 (methyl) acrylate base ester, (methyl) benzyl acrylate etc..Wherein, The carbon number for preferably using alkyl is 1~18 (methyl) alkyl acrylate, such as (methyl) methyl acrylate, (methyl) Ethyl acrylate, (methyl) propyl acrylate, (methyl) n-butyl acrylate, (methyl) 2-EHA etc..
Acrylic copolymer (a1) is generally with the gross mass relative to acrylic copolymer (a1) as 3~100 matter Amount %, be preferably 5~40 mass % ratio contain it is above-mentioned come from the construction unit containing monomer, generally with relative to The gross mass of acrylic copolymer (a1) is 0~97 mass %, be preferably the ratio of 60~95 mass % contains and comes from (first Base) acrylate monomer or derivatives thereof construction unit.
That is, relative to the gross mass of acrylic copolymer (a1), acrylic copolymer (a1) is preferably with 3~100 matter The ratio of amount % contain it is above-mentioned come from the construction unit containing monomer, and generally contained with the ratio of 0~97 mass % Come from the construction unit of (methyl) acrylate monomer or derivatives thereof;More preferably contained with the ratio of 5~40 mass % State and come from the construction unit containing monomer, and generally contained with the ratio of 60~95 mass % and come from (methyl) propylene The construction unit of acid ester monomer or derivatives thereof.
It should be noted that above-mentioned come from the construction unit containing monomer and come from (methyl) acrylate list The gross mass of the construction unit of body or derivatives thereof is less than 100 mass %.
Acrylic copolymer (a1) can by with usual method by above-mentioned containing monomer and (methyl) propylene Acid ester monomer or derivatives thereof copolymerization and obtain, in addition to these monomers, can also be by DMAA, vinyl formate Ester, vinyl acetate, styrene etc. carry out copolymerization.
By making the above-mentioned propylene with unit containing monomer (that is, coming from the construction unit containing monomer) Acid copolymer (a1) reacts with the compound containing unsaturated group (a2) with the substituent in the functional group to be bonded, Energy-line solidifying type polymer (A) can be obtained.
The substituent that compound containing unsaturated group (a2) has can be had according to acrylic copolymer (a1) The functional group's species containing monomer's unit suitably select.For example, in the feelings that functional group is hydroxyl, amino or substituted-amino Under condition, preferred isocyanate base or epoxy radicals are used as substituent, in the case where functional group is epoxy radicals, preferred amino, carboxyl Or '-aziridino is used as substituent.
In addition, in compound containing unsaturated group (a2), it is double that every 1 molecule contains 1~5 energy line polymerism carbon-to-carbon Key, preferably every 1 molecule contains 1~2 energy line polymerism carbon-to-carbon double bond.As such compound containing unsaturated group (a2) specific example, can enumerate for example:2- methacryloxyethyl isocyanates, an isopropenyl-α, alpha, alpha-dimethyl Base benzyl isocyanate ester, methacryloyl isocyanate, allyl iso cyanurate, 1,1- (double acryloyloxymethyls) ethyl Isocyanates;By the reaction of diisocyanate cpd or polyisocyanate compound and (methyl) Hydroxyethyl Acrylate The acryloyl monoisocyanate compound for obtaining;By diisocyanate cpd or polyisocyanate compound, polyhydroxylated Acryloyl monoisocyanate compound obtained from the reaction of compound and (methyl) Hydroxyethyl Acrylate;(methyl) acrylic acid contracts Water glyceride;(methyl) acrylic acid, (methyl) acrylic acid 2- (1- '-aziridinos) ethyl ester;Or 2- vinyl -2-Oxazoline, 2- Isopropenyl -2-The thiazolinyls such as oxazolineIsoxazoline compound etc..
In above-mentioned central, preferred 2- methacryloxyethyls isocyanates.
Contain monomer relative to every 100 equivalent of aforesaid propylene acid copolymer (a1), generally work as with 10~100 Measure, preferably compound containing unsaturated group (a2) used with the ratio of 20~95 equivalents.
In the reaction of acrylic copolymer (a1) and compound containing unsaturated group (a2), can according to functional group and The combination of substituent is suitably selecting the temperature reacted, pressure, solvent, the time, whether there is catalyst, catalyst type.Thus, third Functional group present in olefin(e) acid analog copolymer (a1) reacts with the substituent in compound containing unsaturated group (a2), insatiable hunger The side chain in acrylic copolymer (a1) is directed to group, so as to obtain energy-line solidifying type polymer (A).
The weight average molecular weight of the energy-line solidifying type polymer (A) for so obtaining is preferably more than 10,000, more preferably 150,000 ~150 ten thousand, particularly preferably 200,000~1,000,000.It should be noted that the weight average molecular weight (Mw) in this specification is using solidifying The value for being scaled polystyrene that glue penetration chromatography (GPC method) is measured.
In energy ray-curable adhesive using the polymer with energy ray-curable as in the case of principal component, energy Line curing adhesive can also further containing in the monomer and oligomer of energy ray-curable it is at least one into Divide (B).
As at least one composition (B) in the monomer and oligomer of energy ray-curable, can enumerate for example: Ester that polyalcohol is formed with (methyl) acrylic acid etc..
At least one composition (B) in as above-mentioned monomer and oligomer selected from energy ray-curable, can enumerate For example:The monofunctional acrylate classes such as (methyl) cyclohexyl acrylate, (methyl) isobornyl acrylate;Trimethylolpropane tris (methyl) acrylate, pentaerythrite three (methyl) acrylate, pentaerythrite four (methyl) acrylate, dipentaerythritol six (methyl) acrylate, 1,4- butanediols two (methyl) acrylate, 1,6-HD two (methyl) acrylate, polyethylene glycol The polyfunctional acrylic ester classes such as two (methyl) acrylate, dihydroxymethyl tristane two (methyl) acrylate;Polyester oligomeric (methyl) acrylate, polyurethane oligomeric (methyl) acrylate etc..
Above-mentioned central, preferred polyfunctional acrylic ester class and polyurethane oligomeric (methyl) acrylate.
It is right in the case where at least one composition (B) in the monomer and oligomer of energy ray-curable is coordinated In the energy ray-curable adhesive for the content of composition (B), relative to the gross mass of above-mentioned energy ray-curable adhesive, Preferably 5~80 mass %, more preferably 20~60 mass %.
Here, using ultraviolet as make energy line curing resin composition solidify energy line situation Under, preferably further add Photoepolymerizationinitiater initiater (C), by using the Photoepolymerizationinitiater initiater (C), when can reduce polymerizing curable Between and light exposure.
As Photoepolymerizationinitiater initiater (C), specifically can enumerate:Benzophenone, acetophenone, benzoin, benzoin methyl ether, Benzoin ethyl ether, benzoin isopropyl ether, benzoin isobutyl ether, benzoylbenzoic acid, methyl benzoylbenzoate, rest in peace Fragrant double methyl ethers, 2,4- diethyl thiazolones, 1- hydroxycyclohexyl phenyl ketones, benzyldiphenyl thioether, a sulfuration tetramethyl autumn Lan Mu, azodiisobutyronitrile, benzil, bibenzyl, diacetyl, β-chloroanthraquinone, (2,4,6- trimethyl benzyl diphenyl) phosphine oxide, N, N- diethyldithiocar bamic acid 2-[4-morpholinodithio ester, oligomeric { 2- hydroxy-2-methyl -1- [4- (1- acrylic) phenyl] Acetone }, 2,2- dimethoxy -1,2- diphenylethane -1- ketone etc..
These compounds may be used singly or in combination of two or more.
Energy-line solidifying type copolymer (A) (is being coordinated in the monomer and oligomer of energy ray-curable extremely In the case of a kind of few composition (B), by energy-line solidifying type copolymer (A) and monomer selected from energy ray-curable and oligomeric The total amount of at least one composition (B) in thing is set to 100 mass parts) when being set to 100 mass parts, preferably with 0.1~10 mass The amount of part scope uses Photoepolymerizationinitiater initiater (C), particularly preferably uses Photoepolymerizationinitiater initiater with the amount of 0.5~6 mass parts scope (C)。
In energy ray-curable adhesive, in addition to mentioned component, can also suitably coordinate other compositions.As it Its composition, can enumerate for example do not have component of polymer or oligomer composition (D), crosslinking agent (E) of energy ray-curable etc..
That is, as a mode of energy ray-curable adhesive, it includes energy-line solidifying type copolymer (A), and As needed comprising at least one composition in being selected from the group:In the monomer and oligomer of energy ray-curable at least one Composition (B), Photoepolymerizationinitiater initiater (C), the component of polymer with energy ray-curable or oligomer composition (D) and the friendship planted Connection agent (E).
As the component of polymer or oligomer composition (D) without energy ray-curable, can enumerate for example:Polypropylene Acid esters, polyester, polyurethane, Merlon, polyolefin etc., preferable weight-average molecular weight (Mw) be 3000~2,500,000 polymer or Oligomer.
As crosslinking agent (E), it is possible to use there is reaction with the functional group that energy-line solidifying type copolymer (A) etc. has The polyfunctional compound of property.As the example of such polyfunctional compound, can enumerate:Isocyanate compound, epoxidation Compound, amines, melamine compound, nitrogen heterocycle propane compound, hydrazine compound, aldehyde compound,Isoxazoline compound, Metallic alkoxide compound, meal chelate compounds, slaine, ammonium salt, reactive phenolic resin etc..
By coordinating above-mentioned other composition (D), (E) in energy ray-curable adhesive, can improve viscous before solidification Cementability, storage stability of intensity and other layers after conjunction property and fissility, solidification etc..The use level of these other compositions It is not particularly limited, relative to the mass parts of energy-line solidifying type copolymer (A) 100, can be appropriate in the scope of 0~40 mass parts It is determined that.
Next, for energy ray-curable adhesive is with the not component of polymer with energy ray-curable and is selected from At least one mixture in energy ray-curable polyfunctional monomer and oligomer is illustrated for the situation of principal component.
As the component of polymer without energy ray-curable, it is possible to use for example with aforesaid propylene acid copolymer (a1) identical composition.Relative to the gross mass of energy line curing resin composition, in energy line curing resin composition The not content of component of polymer with energy ray-curable be preferably 20~99.9 mass %, particularly preferably 30~80 matter Amount %.
As at least one composition in energy ray-curable polyfunctional monomer and oligomer, can select with it is upper State composition (B) identical composition.There is no the component of polymer of energy ray-curable and the multifunctional list of energy ray-curable is selected from The match ratio of at least one composition in body and oligomer is as follows:The component of polymer for not having energy ray-curable is set to During 100 mass parts, at least one composition in energy ray-curable polyfunctional monomer and oligomer is preferably 10~150 Mass parts, more preferably 25~100 mass parts.
In this case, it is also possible to appropriate as described above to coordinate Photoepolymerizationinitiater initiater (C), crosslinking agent (E).
That is, as a mode of energy ray-curable adhesive, it is included:There is no the polymer of energy ray-curable Composition, at least one composition in energy ray-curable polyfunctional monomer and oligomer and use as needed At least one composition in Photoepolymerizationinitiater initiater (C) and crosslinking agent (E).
For the thickness of adhesive phase 42, as long as can play in each operation using diaphragm formation piece 3 Appropriate function, is not particularly limited.Specifically, preferably 1 μm~50 μm, more preferably 2 μm~30 μm, particularly preferably For 3 μm~20 μm.
2. diaphragm forms film
It is for being formed on workpiece or in the machining object obtained from being processed to above-mentioned workpiece that diaphragm forms film 1 The film of diaphragm.The diaphragm forms film 1 and constitutes by the diaphragm after solidifying.As workpiece, such as semiconductor die can be enumerated Piece etc., as machining object obtained from being processed to above-mentioned workpiece, can enumerate such as semiconductor chip, but the present invention is not It is defined in this.It should be noted that in the case where workpiece is semiconductor wafer, diaphragm is formed at the back side of semiconductor wafer Side (does not form the side of the electrodes such as projection).
Diaphragm forms the film that film 1 can be individual layer, it is also possible to the film being made up of multilayer, from the appearance of control light transmittance From the aspect of easy property and manufacturing cost, preferably it is made up of individual layer.
Diaphragm forms film 1 and is preferably formed by curable material, as the specific example of such material, can enumerate not The curability bonding agent of solidification.In this case, film 1 is formed by making the workpiece such as semiconductor wafer be superimposed on diaphragm, then Make diaphragm form film 1 to solidify, the diaphragm that film 1 constitutes can will be formed by the diaphragm after solidifying and is adhered to work securely Part, such that it is able to form the diaphragm with durability to chip etc..
That is, as an embodiment of the invention diaphragm formation piece a mode, it is included by uncured Curable material formed diaphragm formed film.
Diaphragm forms film 1 and preferably has cohesive at normal temperatures, or plays cohesive by heating.Thus, such as When making the workpiece such as semiconductor wafer be superimposed on diaphragm formation film 1 described in upper, both can be made to fit.Therefore, it is possible to effectively Positioned making diaphragm be formed before film 1 solidifies.
The curability bonding agent for constituting the formation film 1 of the diaphragm with above-mentioned characteristic preferably comprises curability composition and bonding Agent component of polymer.
As curability composition, it is possible to use Thermocurable composition, energy ray-curable composition or their mixture, Particularly preferably use Thermocurable composition.That is, diaphragm forms film 1 and is preferably made up of Thermocurable bonding agent.
As Thermocurable composition, can enumerate for example:Epoxy resin, phenolic resin, melmac, urea tree Fat, polyester resin, polyurethane resin, acrylic resin, polyimide resin, benzoPiperazine resin etc. and their mixture. Wherein, epoxy resin, phenolic resin and their mixture are preferably used.
There is three-dimensional nettedization when epoxy resin has heated and form the property of firm envelope.As such Epoxy resin, it is possible to use known various epoxy resin, it is usually preferred to molecular weight (formula weight) 300~2000 or so Resin, the more preferably resin of molecular weight 300~500.Further, preferably by under normal temperature for liquid molecular weight 330~400 ring It is the molecular weight 400~2500 of solid under oxygen tree fat and normal temperature, is particularly the epoxy resin of molecular weight 500~2000 to be blended Form is used.In addition, the epoxide equivalent of epoxy resin is preferably 50~5000g/eq.
As such epoxy resin, specifically can enumerate:Bisphenol-A, Bisphenol F, resorcinol, phenolic varnish type, cresols The glycidol ether of the phenols such as phenolic varnish type;The glycidol ether of the alcohols such as butanediol, polyethylene glycol, polypropylene glycol;Adjacent benzene The glycidol ether of the carboxylic acids such as dioctyl phthalate, M-phthalic acid, tetrahydrophthalic acid;Aniline chlorinated isocyanurates etc. is bonded to nitrogen Active hydrogen on atom replaced by glycidyl obtained from glycidyl type or alkyl glycidyl type epoxy resin; Vinyl cyclohexane diepoxide, 3,4- epoxycyclohexylmethyl -3,4- bicyclohexane carboxylate methyl esters, 2- (3,4- epoxies Base) cyclohexyl -5,5- spiral shells (3,4- epoxy radicals) hexamethylene trimethylene-formal etc. is such by the way that intramolecular carbon-to-carbon is double Key is for example aoxidized and has been imported the so-called alicyclic ring type epoxides of epoxy radicals.Furthermore it is also possible to using with biphenyl backbone, The epoxy resin of bicyclohexane diene skeleton, naphthalene skeleton etc..
In the middle of above-mentioned, as epoxy resin, bisphenols glycidyl type epoxy resin, orthoresol phenolic aldehyde are preferably used clear Paint shaped epoxy resin and phenol novolak type epoxy resin.These epoxy resin can be used alone one kind, or by two or more It is applied in combination.
In the case of using epoxy resin, preferably using as the combination of the thermal activities type latent epoxy resin curing agent of auxiliary agent Use." thermal activities type latent epoxy resin curing agent " referred to and do not react with epoxy resin at room temperature, and pass through to be heated to More than uniform temperature there is the curing agent for activating the type so as to react with epoxy resin.Thermal activities type latency asphalt mixtures modified by epoxy resin The activation method of fat curing agent includes:The side of spike (anion, cation) is generated by the chemical reaction based on heating Method;Be dispersed stably in epoxy resin near room temperature, at high temperature with epoxy resin compatibility/dissolving and cause curing reaction Method;Its dissolution and method for causing curing reaction at high temperature is made using the case type curing agent of molecular sieve;Using micro- glue Method of capsule etc..
As the specific example of thermal activities type latent epoxy resin curing agent, can enumerate variousSalt or binary acid two High-melting-point active hydrogen compounds such as hydrazide compound, dicyandiamide, amine adduct curing agent, imidazolium compounds etc..These thermal activities Type latent epoxy resin curing agent can be used alone one kind or be applied in combination two or more.Thermal activities type as above Latent epoxy resin curing agent preferably with relative to the weight portion of epoxy resin 100 as 0.1~20 weight portion, particularly preferably 0.2~10 weight portion, the ratio of more preferably 0.3~5 weight portion are used.
As phenolic resin, the phenols such as alkylphenol, polyhydric phenols, naphthols and aldehydes can be without particular limitation used Condensation product etc..Specifically can using phenol resol resins, o-cresol novolak resin, paracresol novolac resin, T-butylphenol novolac resin, dicyclopentadiene cresol resin, poly- 4-Vinyl phenol resin, bisphenol A-type novolaks Resin or their modifier etc..
The phenolic hydroxyl group that these phenolic resins are included easily can be sent out with the epoxy radicals of above-mentioned epoxy resin by heating Raw addition reaction, forms the high solidfied material of resistance to impact.Accordingly it is also possible to epoxy resin is applied in combination with phenolic resin.
As energy ray-curable composition, can enumerate:The polymer with energy ray-curable in adhesive phase 42, And as the composition cited by least one composition (B) in the monomer and oligomer of energy ray-curable.
Binder polymer composition forms film 1 and gives appropriate viscosity to diaphragm, is formed such that it is able to improve diaphragm With the operability of piece 3.The weight average molecular weight of binder polymer is usually 50,000~2,000,000, preferably 100,000~1,500,000, especially Preferably 200,000~1,000,000 scope.If weight average molecular weight is too low, the film forming that diaphragm forms film 1 is insufficient, if mistake Height, then with the compatibility poor of other compositions, as a result can hinder homogeneous film formation.That is, if weight average molecular weight is above-mentioned lower limit More than, then the film forming of diaphragm formation film 1 is fully, below above-mentioned higher limit, then good with the compatibility of other compositions, As a result uniform film can be formed.As such binder polymer, it is possible to use for example:Acrylic polymer, polyester Resin, phenoxy resin, polyurethane resin, polyorganosiloxane resin, rubber polymer etc., particularly preferably using acrylic polymer Compound.
As acrylic polymer, can enumerate for example:(methyl) acrylate monomer with come from (methyl) propylene (methyl) acrylate copolymer that the construction unit of acid derivative is formed.Here, as (methyl) acrylate monomer, preferably The carbon number for enumerating alkyl is 1~18 (methyl) alkyl acrylate, specifically can be enumerated:(methyl) methyl acrylate, (methyl) ethyl acrylate, (methyl) propyl acrylate, (methyl) butyl acrylate etc..In addition, spreading out as (methyl) acrylic acid Biology, can enumerate such as (methyl) acrylic acid, (methyl) glycidyl acrylate, (methyl) Hydroxyethyl Acrylate etc..
In the middle of above-mentioned, imported in acrylic polymer using GMA etc. as construction unit During glycidyl, it is improved with the compatibility of the above-mentioned epoxy resin as Thermocurable composition, diaphragm forms film 1 and consolidates Glass transition temperature (Tg) after change is uprised, and heat resistance is improved.In addition, in the middle of above-mentioned, being made using Hydroxyethyl Acrylate etc. When importing hydroxyl in acrylic polymer for construction unit, the adaptation to workpiece, bonding physical property can be controlled.
In the case where acrylic polymer has been used as binder polymer, the weight average molecular weight of above-mentioned polymer Preferably more than 100,000, particularly preferably 150,000~1,000,000.The glass transition temperature of acrylic polymer is usually 20 DEG C Hereinafter, preferably -70~0 DEG C or so, and there is cohesive under normal temperature (23 DEG C).
Thermocurable composition is as follows with the compounding ratio of binder polymer composition:By binder polymer into being divided into During 100 weight portion, the use level of Thermocurable composition is preferably 50~1500 weight portions, more preferably 70~1000 weight portions, Particularly preferably 80~800 weight portions.When Thermocurable composition and binder polymer composition is coordinated with such ratio, Appropriate viscosity is shown before solidification, paste operation can be stably carried out, and envelope excellent strength can be obtained after hardening Diaphragm.
Diaphragm forms film 1 preferably further containing at least one composition in colouring agent and filler.
As colouring agent, it is possible to use for example:The known coloring such as inorganic pigment, organic pigment, organic dyestuff Agent, from from the viewpoint of the controlling for improving light transmittance, preferred colouring agent contains organic based colorant.From raising colouring agent Chemical stability (specifically, can with example go out dissolution complexity, produce color transfer complexity, rheological parameters' change with time Size) from the viewpoint of, the colouring agent that colouring agent is preferably made up of pigment.
As filler, can enumerate:The silica such as crystalline silica, fused silica, synthetic silica, oxygen Change the inorganic fillers such as aluminium, glass marble.Wherein, preferred silica, more preferably synthetic silica, particularly, remove as much as possible The synthetic silica of the type of the Alpha-ray radiation source for becoming the main cause for causing semiconductor device to produce misoperation is removed It is optimal.As the shape of filler, can enumerate:Spherical, needle-like, amorphous etc., it is preferably spherical, particularly preferably just It is spherical.When filler is spherical or just spherical, the diffusing reflection of light is not susceptible to, is easily controlled the light that diaphragm forms film 1 The spectral profile of transmissivity.
As the content of at least one composition in colouring agent and filler, relative to diaphragm total matter of film is formed Amount, preferably 5~75 mass %.
The average grain diameter of filler is preferably 0.005~20 μm.
In addition, diaphragm forms film 1 can contain coupling agent.By containing coupling agent, film 1 can be formed in diaphragm and consolidated It is improved the cementability and adaptation of said protection film and workpiece after change and does not damage the heat resistance of diaphragm, and also can To improve resistance to water (humidity resistance).It is preferably silane coupled from from the aspect of its versatility and cost advantage etc. as coupling agent Agent.
As silane coupler, can enumerate for example:γ-glycidoxypropyltrime,hoxysilane, the oxygen of γ-epoxy third Base hydroxypropyl methyl diethoxy silane, β-(3,4- epoxycyclohexyls) ethyl trimethoxy silane, γ-(methacryloxy Propyl group) trimethoxy silane, gamma-amino propyl trimethoxy silicane, N-6- (amino-ethyl)-gamma-amino propyl trimethoxy Silane, N-6- (amino-ethyl)-gamma-amino hydroxypropyl methyl diethoxy silane, N- phenyl-gamma-amino propyl trimethoxy silicon It is alkane, γ-urea propyl-triethoxysilicane, γ-mercaptopropyl trimethoxysilane, γ-mercapto hydroxypropyl methyl dimethoxysilane, double (3- triethoxysilylpropyltetrasulfides) tetrasulfide, MTMS, MTES, vinyl front three TMOS, vinyltriacetoxy silane, imidizole silane etc..In the middle of these, preferred γ-glycidoxypropyl group trimethoxy Base silane.Silane coupler can be used alone one kind, or two or more is used in mixed way.
In the case that diaphragm forms film 1 containing binder polymer composition and curability composition, containing as coupling agent Amount, when gross mass part of binder polymer composition and curability composition is set into 100 mass parts, preferably 0.1~5 mass Part.
Cohesiveness before in order to adjust solidification, diaphragm forms film 1 can also be contained organic polyisocyanate compound, have The crosslinking agents such as many group with imine moiety of machine, organic metal chelate complex compound.In addition, for the reliability for suppressing electrostatic, improving chip Property, diaphragm forms film 1 can also contain antistatic agent.Additionally, in order to improve diaphragm fire resistance, improve encapsulation can By property, diaphragm forms film 1 can also be containing fire retardants such as phosphate cpd, bromine compounds, phosphorus series compounds.
That is, a mode of film 1 is formed as diaphragm, it includes curability composition and binder polymer composition, root According to needing also containing at least one composition in being selected from the group:At least one composition, coupling agent in colouring agent and filler, Crosslinking agent, antistatic agent and fire retardant.
In order to effectively play the function as diaphragm, diaphragm forms the thickness of film 1 and is preferably 3 μm~300 μm, more Preferably 5 μm~200 μm, particularly preferably 7 μm~100 μm.
3. diaphragm
The diaphragm that film 1 formed is formed by the diaphragm of an embodiment of the invention there is following characteristic.
Fracture deformation of the diaphragm at 50 DEG C is more than 0.1% and less than 20%.It is 20% by making the fracture deformation Hereinafter, when the first support chip 4 being stretched into (spread sheet) under conditions of being described below, the first support chip 4 can be possessed Diaphragm suitably split.If the fracture deformation at 50 DEG C is more than 20%, the segmentation of diaphragm easily becomes It is improper, specifically, easily produce and form the material of diaphragm and partly become thread in partitioning portion and do not occur point The phenomenon (being also referred to as in this manual " dragging a phenomenon ") cut.From the viewpoint of the suitable segmentation for more stably realizing diaphragm Consider, fracture deformation of the diaphragm at 50 DEG C is preferably more than 0.2% and less than 15%, more preferably more than 0.3% and Less than 13%, particularly preferably more than 0.5% and less than 10%.
Fracture strength of the diaphragm at 50 DEG C is 1.0 × 103More than Pa and 2.0 × 107Below Pa.By making the fracture Stress is 2.0 × 107Below Pa, when the first support chip 4 being stretched into (spread sheet) under conditions of being described below, can be by The diaphragm that one support chip 4 possesses suitably is split.From the viewpoint of the suitable segmentation for more stably realizing diaphragm Consider, fracture strength of the diaphragm at 50 DEG C is preferably 5.0 × 103Above and 1.9 × 107Below Pa, more preferably 8.0 × 103Above and 1.8 × 107Below Pa, particularly preferably 1.0 × 104Above and 1.7 × 107Below Pa.
It should be noted that " fracture deformations at 50 DEG C " and " fracture strengths at 50 DEG C " of diaphragm can lead to Cross the method described in the test example being described below to determine.
Storage modulus of the diaphragm at 25 DEG C is preferably 3.0 × 109More than Pa and 5.0 × 1011Below Pa, more preferably 5.0×109More than Pa and 1.0 × 1011Below Pa.It is 3.0 × 10 by making storage modulus of the diaphragm at 25 DEG C9Pa with On, when making the semiconductor chip with diaphragm separate from the first support chip 4, diaphragm is not likely to produce the bad feelings of damage Condition.
Loss tangent of the diaphragm at 25 DEG C is preferably more than 0.01 and less than 0.4.By making diaphragm 25 Loss tangent at DEG C is less than 0.4, when making the semiconductor chip with diaphragm separate from the first support chip 4, Diaphragm is not likely to produce the unfavorable condition of damage.Loss tangent of the diaphragm at 25 DEG C be more preferably more than 0.03 and Less than 0.3, particularly preferably more than 0.05 and less than 0.2.
It should be noted that " storage modulus at 25 DEG C " and " loss tangents at 25 DEG C " of diaphragm can To be determined by the method described in test example described below.
Diaphragm is preferably more than 40% and less than 100% to the transmissivity of the light of wavelength 1064nm.By making protection Film is more than 40% to the transmissivity of the light of wavelength 1064nm, effectively can realize being used in the workpiece such as semiconductor wafer The laser of stealth cutting.From more stably realizing that laser effectively reached from the viewpoint of semiconductor wafer, diaphragm is to wavelength The transmissivity of the light of 1064nm is preferably more than 50% and less than 99.9%, more preferably more than 60% and less than 99.5%.
The peak temperature T1 of the loss tangent of diaphragm is in the range of 25 DEG C to 60 DEG C.By making loss angle tangent In above-mentioned scope, the condition being described below is (specifically first will be made in the first segmentation process for the peak temperature T1 of value Support chip 4 stretch when protection film temperature be maintained at the condition in the range of 40 DEG C to 70 DEG C) under stretched the first support chip 4 When (spread sheet), the diaphragm that the first support chip 4 possesses can suitably be split.In the case that temperature T1 is too low, protect Cuticula softens, and fracture deformation of the diaphragm at 50 DEG C is well over 20%.In the case that temperature T1 is too high, diaphragm is hardened, It is difficult to suitably carry out the segmentation of diaphragm when spread sheet is carried out to the first support chip 4.From more stably realizing the suitable of diaphragm When segmentation from the viewpoint of, the temperature of diaphragm when stretching the first support chip 4 in the first segmentation process is preferably lost More than the peak temperature T1 of angle tangent value.
It should be noted that " peak temperature of loss tangent " of diaphragm can be by test example described below Described in method determining.
That is, as a mode of diaphragm formation piece of the invention, there is said protection film to form film for it, and above-mentioned It is the diaphragm formation piece with following characteristic that diaphragm forms film:
Fracture deformation at 50 DEG C be more than 0.2% and less than 20%, and the fracture strength at 50 DEG C be 5.0 × 103More than Pa and 2.0 × 107Below Pa.
Said protection film forms film can further have at least one following characteristic:
Storage modulus at 25 DEG C is 3.0 × 109More than Pa and 5.0 × 1011Below Pa;
Loss tangent at 25 DEG C is more than 0.01 and less than 0.4;
It is more than 40% and less than 100% to the transmissivity of the light of wavelength 1064nm;
The peak temperature T1 of loss tangent is in the range of 25 DEG C to 60 DEG C.
It should be noted that " characteristic " mentioned here refers to that diaphragm forms the chemical characteristic or physical chemistry spy of film Property.
4. fixture adhesive phase
As the fixture adhesive of adhesive phase 5 is constituted, preferably with desired bonding force and releasable, can be with Using for example:Acrylic adhesives, rubber adhesive, polysiloxane-based adhesive, polyurethane binding, polyesters are glued Mixture, polyvinyl ether adhesive etc..It is preferably high with the adaptation of the fixture such as ring-type frame and in cutting action in the middle of these Acrylic adhesives of the diaphragm formation piece 3 from strippings such as ring-type frames can effectively be suppressed in.It should be noted that can Base material as core is accompanied using the inside of the thickness direction in fixture adhesive phase 5.
On the other hand, from from the viewpoint of the cementability to fixtures such as ring-type frames, fixture is preferred with the thickness of adhesive phase 5 For 5 μm~200 μm, particularly preferably 10 μm~100 μm.
It should be noted that " thickness of fixture adhesive phase " is in office in the section of thickness direction arbitrary cut-off Meaning 5 Site Determination thickness and with the value represented by their mean value.
5. stripping film
As an embodiment of the invention diaphragm formation with the stripping film 6 of piece 3 until using diaphragm shape During into before with piece 3, film 1 is formed to diaphragm and fixture is protected with adhesive phase 5.
The structure of stripping film 6 is arbitrary, can to go out carry out lift-off processing to plastic foil by remover etc. and obtain with example The piece for arriving.As the specific example of plastic foil, can enumerate:Polyethylene terephthalate, polybutylene terephthalate The polyester films such as ester, PEN;And the polyolefin film such as polypropylene, polyethylene.As remover, it is possible to use Polysiloxane-based remover, fluorinated remover, chain alkyl class remover etc. are preferably cheap and can obtain surely in the middle of these The polysiloxane-based remover of qualitative energy.For the thickness of stripping film 6 is not particularly limited, usually 20 μm~250 μm or so.
6. the manufacture method of diaphragm formation piece
Diaphragm formation piece 3 is preferably as follows making:Make respectively and form the laminated body of film 1 (in this theory comprising diaphragm In bright book, also referred to as " laminated body I ") and (in this manual, the also referred to as " laminated body of the laminated body comprising the first support chip 4 II ") after, using laminated body I and laminated body II, the diaphragm formation support chip 4 of film 1 and first is carried out into lamination, but do not limit In said method.
When laminated body I is manufactured, form diaphragm in the release surface of the first stripping film and form film 1.Specifically, prepare and protect Cuticula forms film smears, using roll coater, knife type coater, roller knife coating machine, Kohler coater, die coating machine, bar coater, Above-mentioned coating agent in the release surface of the first stripping film, and is dried it by the coating machines such as gravure coater, curtain stream coating machine And diaphragm is formed in the release surface of the first stripping film and forms film 1, the diaphragm forms film smears and contains composition guarantor Cuticula forms the curability bonding agent of film 1, and also contains solvent as needed.Next, the release surface of the 2nd 2 stripping film is folded The exposed surface of film 1 is formed together in diaphragm and carry out pressure viscosity, obtain the lamination that 2 stripping film clamping diaphragms form film 1 Body (laminated body I).
For laminated body I, can as needed implement hemisection, make diaphragm form film 1 (and second stripping film) Become desired shape, such as circle etc..In this case, the diaphragm that can suitably remove by produced by hemisection forms film 1 With the redundance of the second stripping film.
On the other hand, when laminated body II is manufactured, in the release surface coating adhesive layer smears of the 3rd stripping film, and Make its drying and adhesive phase 42 is formed in the release surface of the 3rd stripping film, it is viscous that described adhesive layer smears contains composition The adhesive of mixture layer 42, and also contain solvent as needed.Then, by the pressure viscosity of base material 41 in the exposed surface of adhesive phase 42, The laminated body (laminated body II) formed by the stripping film of support chip 4 and the 3rd is obtained, the support chip 4 is by base material 41 and adhesive phase 42 are constituted.
Here, in the case where adhesive phase 42 is formed by energy ray-curable adhesive, can be in the stage to bonding The irradiation energy line of oxidant layer 42 and solidify adhesive phase 42, it is also possible to diaphragm formed the lamination of film 1 after irradiation energy line And solidify adhesive phase 42.In addition, in the case of solidifying adhesive phase 42 after with the diaphragm formation lamination of film 1, can Before cutting action solidified adhesive phase 42, it is also possible to after cutting action solidify adhesive phase 42.
As energy line, ultraviolet, electron beam etc. is usually used.The exposure of energy line is according to the species of energy line and not Together, for example in the case of ultraviolet, 50~1000mJ/cm is preferably with quantometer2, more preferably 100~500mJ/cm2.Separately Outward, in the case of electron beam, preferably 10~1000krad or so.
After obtaining laminated body I and laminated body II as mentioned above, the second stripping film of laminated body I is peeled off, and by lamination 3rd stripping film of body II is peeled off, and the diaphragm exposed in laminated body I is formed the first support exposed in film 1 and laminated body II The overlapping of adhesive phase 42 of piece 4 and pressure viscosity.As needed hemisection can be carried out to the first support chip 4 so as to become desired Shape, for example there is circle etc. that the larger diameter of film 1 is formed than diaphragm.In this case, can suitably remove and be produced by hemisection The redundance of raw first support chip 4.
Thus, it is possible to obtain forming the diaphragm that the stripping film of film 1 and first formed by the first support chip 4, diaphragm be formed With piece 3, first support chip 4 is formed in the superimposed layer adhesive phase 42 of base material 41, and the diaphragm forms the lamination of film 1 In the side of adhesive phase 42 of the first support chip 4, first stripping film be stacked on diaphragm formed film 1 with towards first support On the face of the face opposition side of piece 4.Finally, by the first stripping film peel off, then diaphragm formed film 1 with towards first support The edge part in the face of the face opposition side of piece 4 forms fixture adhesive phase 5.Fixture adhesive phase 5 can be by viscous with above-mentioned The identical method of mixture layer 42 is coated and is formed.
7. the using method of diaphragm formation piece
As one example of piece 3 of the diaphragm formation using an embodiment of the invention, below to by conduct The method of the semiconductor wafer chip of the manufacture with diaphragm of workpiece is illustrated.
(1) first adhering processes
First, the diaphragm that the diaphragm formation piece 3 of an embodiment of the invention described above possesses is made to form film 1 With showing out towards the face opposition side of the first support chip 4.For diaphragm formation piece 3 as shown in Figure 1, as long as schemed Stripping film 6 is peeled off as shown in 2.
Then, using the one side of the above-mentioned face exposed and the semiconductor wafer 7 as workpiece, be specially and circuit forms face phase The face (back side) tossed about is pasted, and obtains the first laminated body 10 (Fig. 3) with diaphragm formation piece 3 and workpiece 1.Shown in Fig. 3 The first laminated body 10 also have fixture adhesive phase 5 and ring-type frame 8.As above described, fixture bond layer 5 is to protect Cuticula is formed with a key element of piece 3, in the first adhering processes, by diaphragm formation with the diaphragm of piece 3 formed film 1 with When semiconductor wafer 7 is pasted, as long as the fixture bond layer 5 of diaphragm formation piece 3 and ring-type frame 8 are pasted.
That is, as a mode of the first adhering processes, it includes:Make the diaphragm shape of an embodiment of the invention Into the diaphragm formation film possessed with piece and showing out towards the face opposition side of the first support chip;And expose above-mentioned The one side of face and workpiece paste, obtain the first laminated body with said protection film formation piece and above-mentioned workpiece.
(2) first curing process
The diaphragm for making the first laminated body 10 obtained by the first adhering processes forms the diaphragm possessed with piece 3 and is formed Film 1 solidifies and obtains diaphragm.Condition of cure for obtaining diaphragm can be based on the material for constituting diaphragm formation film 1 Suitable setting.In the case that diaphragm formation film 1 is Thermocurable bonding agent, as long as forming film to diaphragm at a given temperature 1 heating reasonable time.In addition, in the case that diaphragm formation film 1 is not Thermocurable bonding agent, heating is implemented in addition Process.
That is, as a mode of the first curing process, it includes:Diaphragm shape in by making above-mentioned first laminated body Film forming solidifies and obtains diaphragm.
Heat time and heating-up temperature are different because constituting the material of film, preferably for example heat 0.5~5 at 90~170 DEG C Hour.
(3) first segmentation process
In the protection for possessing the diaphragm formation piece 3 of the first laminated body 10 after above-mentioned first curing process In the state of the temperature of film is maintained in the range of 40 DEG C to 70 DEG C, draw the first support chip 4 that diaphragm formation piece 3 possesses (spread sheet) is stretched, diaphragm is split together with semiconductor wafer 7.As a result, as shown in figure 4, obtain the second laminated body 20, Second laminated body 20 is that the laminated body of semiconductor wafer 7 and diaphragm is divided in the way of producing section in a thickness direction Chip 9 of multiple (such as 2~20,000) for cutting with diaphragm is configured in the one side of the first support chip 4 and forms 's.
That is, as a mode of the first segmentation process, it includes:Will be above-mentioned after above-mentioned first curing process In the state of the temperature of the said protection film in the first laminated body is maintained in the range of 40 DEG C to 70 DEG C, above-mentioned first support chip is made Stretching, is split by the laminated body to above-mentioned workpiece and said protection film, is obtained multiple chips with diaphragm and is matched somebody with somebody Put the second laminated body in the one side of above-mentioned first support chip.
The method that first support chip 4 is stretched is not limited.As shown in figure 4, can from the first support chip 4 and face The component R of ring-type is contacted to the face opposing face side of ring-type frame 8, the phase of ring-type frame 8 and the vertical of the component R of ring-type is made Position is changed, thus extends the first support chip 4.That is, wrap in the stress produced to support chip 4 by above-mentioned elongation Vector containing horizontal direction or the direction parallel with the back side of semiconductor wafer 7.
Generally, the component when the spread sheet of the first support chip 4 is carried out, between the first support chip 4 and semiconductor wafer 7 Film 1 is formed for diaphragm.Generally, diaphragm forms film 1 and is made up of curable material, and the curable material is can By the material for being solidified to form diaphragm, its representational example is uncured curability bonding agent.Such material exists Until disrumpent feelings deflection (fracture deformation) is big in the case of giving tensile force, even if stretching to the first support chip 4 sometimes (spread sheet) also cannot be split.Therefore, in the spread sheet of the first support chip 4, enter to be about to diaphragm and form film 1 from 0 DEG C of cooling To -20 DEG C or so (specifically, typically by cooled down to realize to the first laminated body 10), so that diaphragm Forming the fracture deformation of film 1 reduces.But, in general, compared with heating, carrying out cooling down needs cooling costly to set Standby, the energy required for being cooled down is more with the energy more required than heating.Therefore, to diaphragm formed film 1 cooled down, one As for be to the first laminated body 10 carry out cool down can cause with diaphragm chip manufacture method in initial investment and The increase that equipment operation takes.
On the other hand, in the manufacture method of the chip with diaphragm of an embodiment of the invention, carrying out During the spread sheet of the first support chip 4, the component between the first support chip 4 and semiconductor wafer 7 is diaphragm.Due to diaphragm It is that diaphragm is formed obtained from the solidification of film 1, therefore the fracture deformation that its fracture deformation also forms film 1 than diaphragm is reduced.Cause This, is not likely to produce the segmentation caused because of fracture deformation bad.But, because diaphragm is the material after solidification, fracture sometimes should Power is improved, and because fracture strength is high, may produce segmentation bad.Therefore, in an embodiment of the invention with guarantor In the manufacture method of the chip of cuticula, in the spread sheet of the first support chip 4, it is set as the temperature of diaphragm being maintained at 40 DEG C extremely State in the range of 70 DEG C.
That is, with conventional cooling spread sheet conversely, by carrying out heating spread sheet, can make generation diaphragm segmentation it is bad can Can property reduction.If diaphragm is heated to 40 DEG C or so, compared with room temperature (23 DEG C) state, the decline of fracture strength becomes bright It is aobvious, can stably enjoy the effect (reducing segmentation bad) brought by heating spread sheet.On the other hand, if making the first support The temperature of diaphragm is more than 70 DEG C during the spread sheet of piece 4, then due to the increase of fracture deformation of diaphragm, the first support chip 4 The malfunction of the change (reduction, softening of Young's modulus etc.) of mechanical property (as specific example, can enumerate spread sheet amount Reduce, the first support chip 4 it is fusible etc. to operating desk) as the possibility that becomes apparent of unfavorable condition improve.Therefore, by making The temperature of diaphragm is less than 70 DEG C during the spread sheet of the first support chip 4, can stably be reduced in the chip with diaphragm The possibility of unfavorable condition is produced during manufacture.Examine from the viewpoint for more stably reducing the possibility that such unfavorable condition is produced Consider, the temperature of diaphragm is preferably set to more than 42 DEG C and less than 65 DEG C sometimes during the spread sheet of the first support chip 4, sometimes more preferably It is set as more than 43 DEG C and less than 60 DEG C, more than 45 DEG C and less than 55 DEG C is particularly preferably set as sometimes.
(4) first pickup process
It is many by what is possessed by the second laminated body 20 obtained from the first segmentation process of enforcement in the first pickup process The individual chip 9 with diaphragm separates respectively from the first support chip 4, obtains as the single with diaphragm of machining object Chip 9.The separation method is not limited, and can as shown in Figure 5 use ejector pin P and vacuum suction collet chuck C.So, The chip 9 with diaphragm can be obtained.
That is, as a mode of the first pickup process, it includes:By above-mentioned second laminated body possess it is above-mentioned multiple Chip with diaphragm is separated respectively from above-mentioned first support chip, so as to obtain as the above-mentioned with diaphragm of machining object Chip.
(5) modified layer formation process
Before until starting the first segmentation process, following modified layer formation process is carried out:Half is set in focus on The mode of the internal focus of conductor chip 7 (workpiece) irradiates the laser of region of ultra-red (such as 1064nm), in semiconductor wafer 7 Portion forms modified layer.In the first segmentation process, by making to be pasted onto semiconductor wafer 7 after modified layer formation process On the first support chip stretched, carry out segmentation preset lines on semiconductor wafer 7 segmentation.
That is, as a mode of modified layer formation process, it includes:Until start above-mentioned first segmentation process it Before, the laser of region of ultra-red is irradiated in the way of focusing on the focus of above-mentioned inside workpiece, form modified in above-mentioned inside workpiece Layer.
8. the other embodiment of diaphragm formation piece
(1) first support chip does not have a case that fixture adhesive phase
Fig. 6 is the profile of the diaphragm formation piece of one of other embodiments of the present invention.As shown in fig. 6, this reality The diaphragm formation piece 3A for applying mode possesses the first support chip 4, diaphragm formation film 1 and stripping film 6 and constitutes, described first Support chip 4 is formed in the face stack adhesive layer 42 of base material 41 1, and the diaphragm forms film 1 and is layered on the first support chip 4 lamination has a side of adhesive phase 42, the stripping film 6 be layered on diaphragm formed film 1 with towards the first support chip 4 Face opposition side face on.Diaphragm in the embodiment formed film 1 be formed as in the surface direction it is essentially identical with workpiece or Person is more slightly larger than workpiece, and is formed as less than the first support chip 4 in the surface direction.Non- lamination diaphragm forms the part of film 1 Adhesive phase 42 can be pasted onto on the fixtures such as ring-type frame.
The material and thickness of each component of the diaphragm formation piece 3A of present embodiment is equal to the diaphragm for above describing Form identical with the material and thickness of each component of piece 3.Wherein, the feelings that adhesive phase 42 is formed by energy ray-curable adhesive Under condition, forming the amount of the being partially enabled line curing adhesive that contact of film 1 with diaphragm and solidify in preferred adhesive phase 42, its with Outer part solidifies energy line curing adhesive.Protect thus, it is possible to improve diaphragm and formed obtained from film 1 solidifies The flatness (glossiness) of film, while the higher bonding force relative to fixtures such as ring-type frames can be kept.
It should be noted that can in the adhesive phase 42 of first support chip 4 of diaphragm formation piece 3A with base material The edge part of 41 opposition sides separately arranges the fixture same folder of adhesive phase 5 with the diaphragm formation piece 3 for above describing Tool adhesive phase.
(2) first support chips do not have a case that adhesive phase
As shown in figure 11, the first support that the diaphragm formation piece 3B of one of other embodiments of the present invention possesses Piece (only) can also be made up of not with adhesive phase base material.In this case, the diaphragm in base material forms the face of film side Equivalent to the first face of the first support chip.
In the case that first support chip is made up of base material, preferably in diaphragm formation film with towards base material, (first supports Piece) the edge part in face of face opposition side arrange and the same fixture adhesive phase of fixture adhesive phase 5 shown in Fig. 1.
(3) first support chips are the situation of stripping film
The first support chip that the diaphragm formation piece of one of other embodiments of the present invention possesses can be had The stripping film of release surface.In this case, first face of the release surface equivalent to the first support chip.Stripping film be specifically constructed without limit It is fixed.
(4) possesses the situation of the second support chip
The diaphragm formation piece of one of other embodiments of the present invention can also have the second support chip, described second Support chip be layered on diaphragm formed film with towards the contrary face side in the face of the first support chip.Second support chip can be Stripping film, its release surface is set to relative with diaphragm formation film.
(5) first support chips form situation about peeling off on film from diaphragm
As shown in Figures 2 to 5, for the invention described above an embodiment the chip 7 with diaphragm manufacture For method, film 1 is formed by diaphragm in the first curing process and is formed after diaphragm, in the first pickup process, make guarantor Cuticula, specifically, makes the dividing body of diaphragm of a part as the chip 7 with diaphragm from the first support chip 4 Separate.
For the manufacture method of the chip with diaphragm of one of other embodiments of the present invention, diaphragm shape Film forming is cured and becomes diaphragm after peeling off from the first support chip.The one of such manufacture method is for example described below.
That is, as present embodiment manufacture method a mode, as shown in Fig. 7~10, it includes:
Lamination procedure, makes the diaphragm that the diaphragm formation piece of an embodiment of the invention possesses form film 1 With showing out towards the face opposition side of the first support chip, by the one side of the workpiece 7 such as the above-mentioned face exposed and semiconductor wafer Paste, and the first support chip of said protection film formation piece is formed into stripping on film from diaphragm, thus obtain with upper State workpiece 7 and said protection film forms the third layer stack body 11 of film 1;
Second curing process, forms film solidification and obtains by the said protection film for possessing above-mentioned third layer stack body 11 Diaphragm;
Second adhering processes, will be provided with the 3rd base material 132 and are stacked in the 3rd adhesive phase of a surface side of the 3rd base material 131 processing is with the face of the above-mentioned 3rd adhesive phase side 131 in piece 13 and above-mentioned the after above-mentioned second curing process The face laminating of the said protection film side in three laminated bodies 11, thus obtains possessing above-mentioned processing piece 13 and above-mentioned third layer stack body 11 the 4th laminated body 12;
Second segmentation process, 40 DEG C are maintained at extremely in the temperature of the said protection film for possessing above-mentioned 4th laminated body 12 In the state of in the range of 70 DEG C, stretch the above-mentioned processing piece 13 that above-mentioned 4th laminated body 12 possesses, by diaphragm with it is upper State workpiece 7 to be split together, thus obtain the 5th laminated body 14, the 5th laminated body 14 is above-mentioned workpiece 7 and above-mentioned guarantor Multiple (such as 2~20,000) bands that the laminated body of cuticula is divided to form in the way of producing section in a thickness direction The chip 9 for having diaphragm is configured in the one side of above-mentioned processing piece 13;And
Second pickup process, multiple chips 9 with diaphragm that above-mentioned 5th laminated body 14 is possessed are respectively from upper State and separated on processing piece 13, so as to obtain the chip 9 with diaphragm as machining object,
Additionally, before until starting above-mentioned second segmentation process, also including following modified layer formation process:To focus on The mode of the focus being set in inside above-mentioned workpiece 7 irradiates the laser of region of ultra-red, and in above-mentioned workpiece 7 modified layer is internally formed.
Here, the base material 41 that the 3rd base material 132 that processing piece 13 possesses can possess with support chip 4 has same Feature.In addition, the adhesive phase that the 3rd adhesive phase 131 that processing piece 13 possesses can also possess with support chip 4 42 have same feature.
In addition, the temperature of said protection film that above-mentioned 4th laminated body 12 in the second segmentation process possesses is preferably It is more than temperature T1 stated.
Embodiments described above is recorded for the ease of the understanding of the present invention, and it is not intended to limit this It is bright and record.Therefore, the purport of each key element disclosed in above-mentioned embodiment is, also including the technology model for belonging to the present invention The all design alterations enclosed and the key element of equivalent.
For example, other layers can be accompanied between the base material 41 in the first support chip 4 and adhesive phase 42.In addition, also may be used With in first face superimposed layer other layers for the first support chip 4 being made up of base material 41.As other layers, can enumerate for example:Bottom Coating etc. is for adjusting the layer of the cementability between base material 41 and adhesive phase 42, formed for adjusting support chip 4 and diaphragm The layer of the cementability between film 1.
For the manufacture method of the chip with diaphragm for above describing, it is also possible to using the embodiment party of the present invention The diaphragm that formula is related to forms the diaphragm beyond film and forms film.
That is, as an embodiment of the invention the chip with diaphragm manufacture method another way, its Including:
Adhering processes, the diaphragm for making the first surface side for possessing the first support chip and being stacked in above-mentioned first support chip is formed On in the diaphragm formation piece of film (diaphragm that embodiments of the present invention are related to forms the diaphragm beyond film and forms film) State that diaphragm forms film with showing out towards the face opposition side of the first support chip, by the one side of the above-mentioned face exposed and workpiece Paste, so as to the first laminated body for obtaining possessing said protection film formation piece and above-mentioned workpiece;
First curing process, makes the said protection film in above-mentioned first laminated body form film solidification and obtain diaphragm;
First segmentation process, by the said protection film in above-mentioned first laminated body after above-mentioned first curing process Temperature be maintained in the range of 40 DEG C to 70 DEG C in the state of, stretch above-mentioned first support chip, by said protection film with it is above-mentioned Workpiece is split together, thus obtains the second laminated body, and second laminated body is the folded of above-mentioned workpiece and said protection film Multiple chips with diaphragm that layer body is divided to form in the way of producing section in a thickness direction are configured in above-mentioned In the one side of the first support chip;And
First pickup process, multiple chips with diaphragm that above-mentioned second laminated body is possessed are respectively from above-mentioned Separate on one support chip, obtain the above-mentioned chip with diaphragm as machining object,
Additionally, before until starting above-mentioned first segmentation process, also including following modified layer formation process:To focus on The mode for being set in the focus of above-mentioned inside workpiece irradiates the laser of region of ultra-red, and in above-mentioned inside workpiece modified layer is formed.
In addition, the temperature of said protection film that above-mentioned first laminated body in above-mentioned first segmentation process possesses is preferably It is more than above-mentioned temperature T1.
In addition, another side of the manufacture method as the chip with diaphragm of an embodiment of the invention Formula, it includes:
Lamination procedure, the diaphragm for making the first surface side for possessing the first support chip and being stacked in the first support chip forms film It is above-mentioned in the diaphragm formation piece of (diaphragm that embodiments of the present invention are related to forms the diaphragm beyond film and forms film) Diaphragm formed film with showing out towards the face opposition side of the first support chip, the above-mentioned face exposed and the one side of workpiece are glued Patch, and above-mentioned first support chip is formed into stripping on film from said protection film, so as to obtain possessing above-mentioned workpiece and above-mentioned guarantor Cuticula forms the third layer stack body of film;
Second curing process, makes the said protection film that above-mentioned third layer stack body possesses form film solidification and be protected Film;
Second adhering processes, will be provided with the 3rd base material and are stacked in adding for the 3rd adhesive phase of a surface side of the 3rd base material Lamination in work piece have the face of above-mentioned 3rd adhesive phase side with have passed through after above-mentioned second curing process the above-mentioned 3rd The face laminating of the diaphragm side of laminated body, obtains the 4th laminated body for possessing above-mentioned processing piece and above-mentioned third layer stack body;
Second segmentation process, is maintained in the temperature of the diaphragm for possessing above-mentioned 4th laminated body
In the state of in the range of 40 DEG C to 70 DEG C, stretch the processing that above-mentioned 4th laminated body possesses piece, will be above-mentioned Diaphragm is split together with above-mentioned workpiece, and so as to obtain the 5th laminated body, the 5th laminated body is above-mentioned workpiece and upper State multiple cores with diaphragm that the laminated body of diaphragm is divided to form in the way of producing section in a thickness direction Piece is configured in the one side of above-mentioned processing piece and forms
's;And
Second pickup process, multiple chips with diaphragm that above-mentioned 5th laminated body is possessed are used respectively from processing Separate on piece, obtain the chip with diaphragm as machining object,
Additionally, before until starting above-mentioned second segmentation process, also including following modified layer formation process:To focus on The mode for being set in the focus of above-mentioned inside workpiece irradiates the laser of region of ultra-red, and in above-mentioned inside workpiece modified layer is formed.
In addition, the temperature of said protection film that above-mentioned 4th laminated body in the second segmentation process possesses is preferably above-mentioned Temperature T1 more than.
Embodiment
Hereinafter, by embodiment etc., more specifically the present invention will be described, but the scope of the present invention is not limited to these Embodiment etc..
[embodiment 1]
Following each composition is mixed according to the match ratio (being converted into solid constituent) shown in table 1, is carried out with MEK dilute Release so that solid component concentration reaches 50 mass % relative to the gross mass that diaphragm forms film smears, be prepared for protection Film forms film smears.
(A-1) binder polymer:The mass parts of n-butyl acrylate 10, the mass parts of methyl acrylate 70, methacrylic acid The mass parts of ethylene oxidic ester 5 and (methyl) acrylate copolymer of the mass parts copolymerization of acrylic acid 2- hydroxy methacrylates 15 (weight Average molecular weight:400000, glass transition temperature:- 1 DEG C) 100 mass parts
(A-2) binder polymer:The mass parts of methyl acrylate 85 and the mass parts copolymerization of acrylic acid 2- hydroxy methacrylates 15 and Into (methyl) acrylate copolymer (weight average molecular weight:400000, glass transition temperature:-6℃)
(A-3) binder polymer:The mass parts of n-butyl acrylate 55, the mass parts of methyl acrylate 10, methacrylic acid The mass parts of ethylene oxidic ester 20 and (methyl) acrylate copolymer of the mass parts copolymerization of acrylic acid 2- hydroxy methacrylates 15 (weight Average molecular weight:800000, glass transition temperature:-28℃)
(B-1) bisphenol A type epoxy resin (Mitsubishi chemical Co., Ltd's manufacture, jER828,184~194g/ of epoxide equivalent eq)
(B-2) bisphenol A type epoxy resin (Mitsubishi chemical Co., Ltd's manufacture, jER1055,800~900g/ of epoxide equivalent eq)
(B-3) dicyclopentadiene type epoxy resin (manufacture of DIC companies, EPICLON HP-7200HH, epoxide equivalent 255~ 260g/eq)
(B-4) (Nippon Kayaku K. K manufactures cresol novolak type epoxy resin, EOCN-104, epoxide equivalent 220g/eq)
(C) thermal activities latent epoxy resin curing agent:(ADEKA companies manufacture dicyandiamide:Adeka Hardener EH3636AS, active hydrogen amount 21g/eq)
(D) curing accelerator:2- phenyl -4,5- bishydroxymethyl imidazoles (Shikoku Chem manufactures, CUREZOL 2PHZ)
(E-1) (Admatechs companies manufacture epoxy-modified spherical silicon dioxide filler, SC2050MA, average grain diameter 0.5μm)
(E-2) vinyl modified spherical silicon dioxide filler (Admatechs companies manufacture,
YA050C-MJA, 0.05 μm of average grain diameter)
(E-3) amorphous silica filler (Long Sen Co., Ltd. manufactures, SV-10,8 μm of average grain diameter)
(F) silane coupler:γ-glycidoxypropyltrime,hoxysilane (Shin-Etsu Chemial Co., Ltd's manufacture, KBM403, methoxyl group equivalent:12.7mmol/g, molecular weight:236.3)
[table 1]
Described before coating on stripping film (Lindeke Co., Ltd manufactures, SP-PET381031) using knife type coater Diaphragm form film smears, and it is 25 μm that the diaphragm for causing to finally give forms the thickness of film, is then drying it In 120 DEG C of dryings 2 minutes in case, define diaphragm and form film, the stripping film is in polyethylene terephthalate (PET) one side of film forms polysiloxane-based peeling agent layer.Then, polysiloxanes will be formed in the one side of PET film The release surface of the stripping film (Lindeke Co., Ltd manufactures, SP-PET251130) of the peeling agent layer of class is formed with diaphragm Film is overlapped and makes both fit, and has obtained diaphragm formation piece.
[embodiment 2]
By constitute diaphragm formed film each composition species and use level according to shown in the row of embodiment 2 one of table 1 adjusting It is whole its composition, and be diluted using MEK cause solid component concentration be 50%, be prepared for diaphragm formed film be coated with Agent, operates in addition, similarly to Example 1, has manufactured diaphragm formation piece.
[comparative example 1]
By constitute diaphragm formed film each composition species and use level according to shown in the row of comparative example 1 one of table 1 adjusting It is whole its composition, and be diluted using MEK cause solid component concentration be 50%, be prepared for diaphragm formed film be coated with Agent, operates in addition, similarly to Example 1, has manufactured diaphragm formation piece.
[comparative example 2]
By constitute diaphragm formed film each composition species and use level according to shown in the row of comparative example 2 one of table 1 adjusting It is whole its composition, and be diluted using MEK cause solid component concentration be 50%, be prepared for diaphragm formed film be coated with Agent, operates in addition, similarly to Example 1, has manufactured diaphragm formation piece.It should be noted that (E-3) amorphous two Cilicon oxide filler (SV-10) is advance have been carried out being used after dispersion in 24 hours in MEK with ball mill.
[test example 1] viscoelastic measure > of <
(1) making of solidfied material sample
2 stripping films of the diaphragm formation piece made in embodiment and comparative example are peeled off, by the diaphragm for obtaining Forming film carries out lamination, and makes its thickness be 200 μm.By the diaphragm forming layer for obtaining in 130 DEG C of baking oven (atmospheric atmosphere In) heat 2 hours, obtain the diaphragm of 200 μm of the thickness as solidfied material sample.
(2) measure of fracture deformation and fracture strength after solidifying at 50 DEG C
Solidfied material sample to obtaining cuts, and has prepared the test film of wide 5mm × 200 μm of long 20mm × thickness.Use Dynamic mechanical analysis device (TA INSTRUMENTS companies manufacture, DMA Q800) has carried out the tension test (chuck of test film Between distance:5mm).After 1 minute is maintained in the environment of temperature 50 C, while increasing load with 1N/ point of constant increment rate Plus while carried out tension test.Fracture strength and fracture deformation are extracted by its result.The results are shown in table 2.
(3) measure of storage modulus and loss tangent of the solidfied material sample at 25 DEG C
Solidfied material sample is cut, has prepared the test film of wide 4.5mm × 200 μm of long 20mm × thickness.Using dynamic Mechanical analysis device (TA INSTRUMENTS companies manufacture, DMA Q800) has carried out under the following conditions storage modulus and loss The measure of elastic modelling quantity.
Mode determination:Stretch mode
Determine started temperature:0℃
Determine end temp:300℃
Programming rate:3 DEG C/minute
Frequency:11Hz
Determine atmosphere:Air
Loss tangent (tan δ) is calculated by resulting storage modulus and loss elastic modulus, has been obtained at 25 DEG C Under storage modulus and the loss tangent at 25 DEG C.Show the result in table 2.
(4) measure of the peak temperature of the loss tangent of solidfied material sample
Loss tangent (tan δ) is calculated by the storage modulus and loss elastic modulus that obtain under these conditions, will Peak temperature of temperature when its value reaches maximum as loss tangent.As a result, loss tangent in embodiment 1 Peak temperature is 52 DEG C, in embodiment 2 peak temperature of loss tangent be 27 DEG C, loss tangent in comparative example 1 Peak temperature is 39 DEG C, the peak temperature of loss tangent is 88 DEG C in comparative example 2.
The evaluation > of [test example 2] < segmentations property
Using sticker (Lindeke Co., Ltd manufacture, RAD-3600F/12) at 70 DEG C by 100 μm of thickness, outer Cutting off processing is pasted on the workpiece that the silicon wafer that 8 inches of footpath is formed and forms film into the diaphragm with silicon wafer same shape, then Heat 2 hours (in atmospheric atmosphere) in 130 DEG C of baking oven so as to solidify, made the chip with diaphragm.
Using sticker (Lindeke Co., Ltd manufacture, RAD-2700F/12) by stealthy cutting dicing tape (beautiful jade Get Ke Co., Ltd. manufactures, Adwill D-821HS) it is pasted onto on the protection face of the chip with diaphragm.Now, also enter Stickup of the dicing tape to ring-type frame is gone.
Using laser irradiation device, across dicing tape and diaphragm the laser (wavelength in inner wafer optically focused is irradiated: 1064nm).Now, along the cut-out preset lines of the chip body for being set as that 5mm × 5mm can be formed, be scanned while Irradiation.
Then, using spread sheet device (DISCO companies manufacture, DDS2300), in the environment of temperature 50 C, with speed 100mm/ seconds, the condition of spread sheet amount 10mm have carried out the spread sheet of the dicing tape being pasted onto on the chip paid with diaphragm.
As a result, with it is all along the cut-out divided chip of preset lines in the same manner as diaphragm also divided situation, its guarantor Cuticula segmentation sex determination is good (being in table 2 " A "), confirms in the diaphragm after segmentation and drags the situation of a phenomenon (to be in table 2 " B ") or diaphragm exist not divided position situation (being in table 2 " C ") be judged to it is bad.The results are shown in table 2.
[test example 3] < protects the evaluation > of film strength
After segmentation evaluation has been carried out in test example 2, using above-mentioned spread sheet device, and use is set as thermal source 550 DEG C of IR stoves, to the chip and diaphragm (that is, multiple chips with diaphragm) after segmentation and possess dicing tape Laminated body (the 4th laminated body) is heated 5 minutes, has thus corrected dicing tape produced when spread sheet is carried out to dicing tape It is lax.Then, using chip welding (canon machinery companies manufacture, Bestem-D02), in the spread sheet for carrying out 3mm In the state of, from being withstood with ejector pin with the face opposing face side of the divided chip towards dicing tape and diaphragm, with very The attached collet chuck of suction lifts the chip with diaphragm extruded, and has picked up the chip with diaphragm.
The chip with diaphragm to being picked up is observed, by the situation of the vestige to ejector pin unconfirmed on diaphragm It is judged to " good " (in table 2 be " A "), will confirm that the situation of vestige of pin of the degree of having no problem is judged to "available" (in table 2 For " B "), will confirm that the situation of vestige of pin is judged to " bad " (in table 2 be " C ").Show the result in table 2.Need explanation , in this evaluation, the diaphragm of comparative example 2 due in test example 2 not by appropriate Ground Split, therefore only to possessing enforcement 4th laminated body of the diaphragm of example 1~2 and comparative example 1 (evaluation object is a cut-off part) carry out this evaluation.
[table 2]
As shown in Table 2, for the fracture deformation possessed at 50 DEG C is less than 20% and the fracture strength at 50 DEG C is 2.0×107For the diaphragm formation piece of the embodiment of the diaphragm of below Pa, its segmentation property is excellent, while diaphragm Intensity is also excellent.
Industrial applicibility
The diaphragm formation of present invention piece is applied to includes that one side carries out heating to diaphragm while the work split The situation of sequence, is industrially exceedingly useful.

Claims (6)

1. a kind of diaphragm formation piece, it possesses the first support chip and is stacked in the guarantor of the first surface side of first support chip Cuticula forms film, wherein,
The diaphragm forms film and is formed by curable material,
The diaphragm forms film and has following characteristic:
When the diaphragm is formed film and is solidified to form diaphragm, fracture deformation of the diaphragm at 50 DEG C be 20% with Under, and the fracture strength at 50 DEG C is 2.0 × 107Below Pa.
2. diaphragm formation piece according to claim 1, wherein, the diaphragm forms film and also has following characteristic:
Storage modulus of the diaphragm at 25 DEG C is 3.0 × 109More than Pa.
3. diaphragm formation piece according to claim 1 and 2, wherein, the diaphragm forms film and also has following spy Property:
Loss tangent of the diaphragm at 25 DEG C is less than 0.4.
4. the diaphragm formation piece according to any one of claims 1 to 3, wherein, the diaphragm forms film also to be had There is following characteristic:
The diaphragm is more than 40% to the transmissivity of the light of wavelength 1064nm.
5. a kind of manufacture method of the chip with diaphragm, the method includes:
Adhering processes, form the diaphragm that the diaphragm formation piece any one of Claims 1 to 4 possesses Film with showing out towards the face opposition side of first support chip, the one side of the face exposed and workpiece is pasted, from And obtain the first laminated body for possessing the diaphragm formation piece and the workpiece;
First curing process, by making first laminated body in the diaphragm formed film solidification and obtain the protection Film;
First segmentation process, in the diaphragm for possessing first laminated body that have passed through first curing process Temperature be maintained in the range of 40 DEG C to 70 DEG C in the state of, stretch first support chip, by the diaphragm with it is described Workpiece is split together, obtains the second laminated body, and second laminated body is the laminated body of the workpiece and the diaphragm The multiple chips with diaphragm being divided to form in the way of producing section in a thickness direction are configured in described first On one face of support chip;And
First pickup process, the plurality of chip with diaphragm that second laminated body is possessed is respectively from described Separate on one support chip, obtain as the chip with diaphragm described in machining object,
Wherein, before first segmentation process is started, comprising following modified layer formation process:With focus on be set in it is described The mode of the focus of inside workpiece irradiates the laser of region of ultra-red, and in the inside workpiece modified layer is formed.
6. a kind of manufacture method of the chip with diaphragm, the method includes:
Lamination procedure, forms the diaphragm that the diaphragm formation piece any one of Claims 1 to 4 possesses Film with showing out towards the face opposition side of first support chip, the one side of the face exposed and workpiece is pasted, and And first support chip is formed into stripping on film from the diaphragm, so as to obtain possessing the workpiece and the diaphragm shape The third layer stack body of film forming;
Second curing process, forms film solidification and obtains the guarantor by the diaphragm for possessing the third layer stack body Cuticula;
Second adhering processes, will be provided with the 3rd base material and are stacked in adding for the 3rd adhesive phase of a surface side of the 3rd base material The lamination of work piece has the face of the 3rd adhesive phase side and the third layer stack after second curing process The face laminating of the diaphragm side of body, so as to the 4th lamination for obtaining possessing the processing piece and the third layer stack body Body;
Second segmentation process, in the temperature of the diaphragm for possessing the 4th laminated body 40 DEG C to 70 DEG C models are maintained at In the state of in enclosing, the processing piece stretching that the 4th laminated body possesses is made, by the diaphragm and the workpiece Split together, so as to obtain the 5th laminated body, the 5th laminated body is the laminated body of the workpiece and the diaphragm The multiple chips with diaphragm being divided to form in the way of producing section in a thickness direction are configured in the processing With on a face of piece;And
Second pickup process, the plurality of chip with diaphragm that the 5th laminated body is possessed adds respectively from described Separate on work piece, obtain as the chip with diaphragm described in machining object,
Wherein, before second segmentation process is started, comprising following modified layer formation process:With focus on be set in it is described The mode of the focus of inside workpiece irradiates the laser of region of ultra-red, and in the inside workpiece modified layer is formed.
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