[go: up one dir, main page]
More Web Proxy on the site http://driver.im/

CN106660260A - Method for manufacturing member having irregular pattern - Google Patents

Method for manufacturing member having irregular pattern Download PDF

Info

Publication number
CN106660260A
CN106660260A CN201580042029.9A CN201580042029A CN106660260A CN 106660260 A CN106660260 A CN 106660260A CN 201580042029 A CN201580042029 A CN 201580042029A CN 106660260 A CN106660260 A CN 106660260A
Authority
CN
China
Prior art keywords
film
mentioned
relief pattern
mould
component
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
CN201580042029.9A
Other languages
Chinese (zh)
Inventor
高桥麻登香
鸟山重隆
关隆史
佐藤祐辅
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Eneos Corp
Original Assignee
JX Nippon Oil and Energy Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by JX Nippon Oil and Energy Corp filed Critical JX Nippon Oil and Energy Corp
Publication of CN106660260A publication Critical patent/CN106660260A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00—Organic light-emitting devices
    • H10K50/80—Constructional details
    • H10K50/85—Arrangements for extracting light from the devices
    • H10K50/858—Arrangements for extracting light from the devices comprising refractive means, e.g. lenses
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B29—WORKING OF PLASTICS; WORKING OF SUBSTANCES IN A PLASTIC STATE IN GENERAL
    • B29C—SHAPING OR JOINING OF PLASTICS; SHAPING OF MATERIAL IN A PLASTIC STATE, NOT OTHERWISE PROVIDED FOR; AFTER-TREATMENT OF THE SHAPED PRODUCTS, e.g. REPAIRING
    • B29C59/00—Surface shaping of articles, e.g. embossing; Apparatus therefor
    • B29C59/02—Surface shaping of articles, e.g. embossing; Apparatus therefor by mechanical means, e.g. pressing
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B32—LAYERED PRODUCTS
    • B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
    • B32B33/00—Layered products characterised by particular properties or particular surface features, e.g. particular surface coatings; Layered products designed for particular purposes not covered by another single class
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B29—WORKING OF PLASTICS; WORKING OF SUBSTANCES IN A PLASTIC STATE IN GENERAL
    • B29C—SHAPING OR JOINING OF PLASTICS; SHAPING OF MATERIAL IN A PLASTIC STATE, NOT OTHERWISE PROVIDED FOR; AFTER-TREATMENT OF THE SHAPED PRODUCTS, e.g. REPAIRING
    • B29C59/00—Surface shaping of articles, e.g. embossing; Apparatus therefor
    • B29C59/02—Surface shaping of articles, e.g. embossing; Apparatus therefor by mechanical means, e.g. pressing
    • B29C59/04—Surface shaping of articles, e.g. embossing; Apparatus therefor by mechanical means, e.g. pressing using rollers or endless belts
    • B29C59/046—Surface shaping of articles, e.g. embossing; Apparatus therefor by mechanical means, e.g. pressing using rollers or endless belts for layered or coated substantially flat surfaces
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B29—WORKING OF PLASTICS; WORKING OF SUBSTANCES IN A PLASTIC STATE IN GENERAL
    • B29C—SHAPING OR JOINING OF PLASTICS; SHAPING OF MATERIAL IN A PLASTIC STATE, NOT OTHERWISE PROVIDED FOR; AFTER-TREATMENT OF THE SHAPED PRODUCTS, e.g. REPAIRING
    • B29C65/00—Joining or sealing of preformed parts, e.g. welding of plastics materials; Apparatus therefor
    • B29C65/48—Joining or sealing of preformed parts, e.g. welding of plastics materials; Apparatus therefor using adhesives, i.e. using supplementary joining material; solvent bonding
    • B29C65/52—Joining or sealing of preformed parts, e.g. welding of plastics materials; Apparatus therefor using adhesives, i.e. using supplementary joining material; solvent bonding characterised by the way of applying the adhesive
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B32—LAYERED PRODUCTS
    • B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
    • B32B37/00—Methods or apparatus for laminating, e.g. by curing or by ultrasonic bonding
    • B32B37/02—Methods or apparatus for laminating, e.g. by curing or by ultrasonic bonding characterised by a sequence of laminating steps, e.g. by adding new layers at consecutive laminating stations
    • B32B37/025—Transfer laminating
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B32—LAYERED PRODUCTS
    • B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
    • B32B37/00—Methods or apparatus for laminating, e.g. by curing or by ultrasonic bonding
    • B32B37/12—Methods or apparatus for laminating, e.g. by curing or by ultrasonic bonding characterised by using adhesives
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B32—LAYERED PRODUCTS
    • B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
    • B32B38/00—Ancillary operations in connection with laminating processes
    • B32B38/10—Removing layers, or parts of layers, mechanically or chemically
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05B—ELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
    • H05B33/00—Electroluminescent light sources
    • H05B33/02—Details
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05B—ELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
    • H05B33/00—Electroluminescent light sources
    • H05B33/02—Details
    • H05B33/04—Sealing arrangements, e.g. against humidity
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00—Organic light-emitting devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00—Organic light-emitting devices
    • H10K50/80—Constructional details
    • H10K50/84—Passivation; Containers; Encapsulations
    • H10K50/844—Encapsulations
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K77/00—Constructional details of devices covered by this subclass and not covered by groups H10K10/80, H10K30/80, H10K50/80 or H10K59/80
    • H10K77/10—Substrates, e.g. flexible substrates
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B29—WORKING OF PLASTICS; WORKING OF SUBSTANCES IN A PLASTIC STATE IN GENERAL
    • B29C—SHAPING OR JOINING OF PLASTICS; SHAPING OF MATERIAL IN A PLASTIC STATE, NOT OTHERWISE PROVIDED FOR; AFTER-TREATMENT OF THE SHAPED PRODUCTS, e.g. REPAIRING
    • B29C35/00—Heating, cooling or curing, e.g. crosslinking or vulcanising; Apparatus therefor
    • B29C35/02—Heating or curing, e.g. crosslinking or vulcanizing during moulding, e.g. in a mould
    • B29C35/08—Heating or curing, e.g. crosslinking or vulcanizing during moulding, e.g. in a mould by wave energy or particle radiation
    • B29C35/0805—Heating or curing, e.g. crosslinking or vulcanizing during moulding, e.g. in a mould by wave energy or particle radiation using electromagnetic radiation
    • B29C2035/0827—Heating or curing, e.g. crosslinking or vulcanizing during moulding, e.g. in a mould by wave energy or particle radiation using electromagnetic radiation using UV radiation
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B29—WORKING OF PLASTICS; WORKING OF SUBSTANCES IN A PLASTIC STATE IN GENERAL
    • B29C—SHAPING OR JOINING OF PLASTICS; SHAPING OF MATERIAL IN A PLASTIC STATE, NOT OTHERWISE PROVIDED FOR; AFTER-TREATMENT OF THE SHAPED PRODUCTS, e.g. REPAIRING
    • B29C59/00—Surface shaping of articles, e.g. embossing; Apparatus therefor
    • B29C59/02—Surface shaping of articles, e.g. embossing; Apparatus therefor by mechanical means, e.g. pressing
    • B29C59/022—Surface shaping of articles, e.g. embossing; Apparatus therefor by mechanical means, e.g. pressing characterised by the disposition or the configuration, e.g. dimensions, of the embossments or the shaping tools therefor
    • B29C2059/023—Microembossing
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B29—WORKING OF PLASTICS; WORKING OF SUBSTANCES IN A PLASTIC STATE IN GENERAL
    • B29C—SHAPING OR JOINING OF PLASTICS; SHAPING OF MATERIAL IN A PLASTIC STATE, NOT OTHERWISE PROVIDED FOR; AFTER-TREATMENT OF THE SHAPED PRODUCTS, e.g. REPAIRING
    • B29C59/00—Surface shaping of articles, e.g. embossing; Apparatus therefor
    • B29C59/10—Surface shaping of articles, e.g. embossing; Apparatus therefor by electric discharge treatment
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B29—WORKING OF PLASTICS; WORKING OF SUBSTANCES IN A PLASTIC STATE IN GENERAL
    • B29C—SHAPING OR JOINING OF PLASTICS; SHAPING OF MATERIAL IN A PLASTIC STATE, NOT OTHERWISE PROVIDED FOR; AFTER-TREATMENT OF THE SHAPED PRODUCTS, e.g. REPAIRING
    • B29C59/00—Surface shaping of articles, e.g. embossing; Apparatus therefor
    • B29C59/14—Surface shaping of articles, e.g. embossing; Apparatus therefor by plasma treatment
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B29—WORKING OF PLASTICS; WORKING OF SUBSTANCES IN A PLASTIC STATE IN GENERAL
    • B29C—SHAPING OR JOINING OF PLASTICS; SHAPING OF MATERIAL IN A PLASTIC STATE, NOT OTHERWISE PROVIDED FOR; AFTER-TREATMENT OF THE SHAPED PRODUCTS, e.g. REPAIRING
    • B29C59/00—Surface shaping of articles, e.g. embossing; Apparatus therefor
    • B29C59/16—Surface shaping of articles, e.g. embossing; Apparatus therefor by wave energy or particle radiation, e.g. infrared heating
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B32—LAYERED PRODUCTS
    • B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
    • B32B38/00—Ancillary operations in connection with laminating processes
    • B32B2038/0052—Other operations not otherwise provided for
    • B32B2038/0076—Curing, vulcanising, cross-linking
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B32—LAYERED PRODUCTS
    • B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
    • B32B2307/00—Properties of the layers or laminate
    • B32B2307/70—Other properties
    • B32B2307/724—Permeability to gases, adsorption
    • B32B2307/7242—Non-permeable
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B32—LAYERED PRODUCTS
    • B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
    • B32B2457/00—Electrical equipment
    • B32B2457/20—Displays, e.g. liquid crystal displays, plasma displays
    • B32B2457/206—Organic displays, e.g. OLED
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B32—LAYERED PRODUCTS
    • B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
    • B32B37/00—Methods or apparatus for laminating, e.g. by curing or by ultrasonic bonding
    • B32B37/0046—Methods or apparatus for laminating, e.g. by curing or by ultrasonic bonding characterised by constructional aspects of the apparatus
    • B32B37/0053—Constructional details of laminating machines comprising rollers; Constructional features of the rollers
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B32—LAYERED PRODUCTS
    • B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
    • B32B37/00—Methods or apparatus for laminating, e.g. by curing or by ultrasonic bonding
    • B32B37/12—Methods or apparatus for laminating, e.g. by curing or by ultrasonic bonding characterised by using adhesives
    • B32B37/1284—Application of adhesive
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B32—LAYERED PRODUCTS
    • B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
    • B32B37/00—Methods or apparatus for laminating, e.g. by curing or by ultrasonic bonding
    • B32B37/14—Methods or apparatus for laminating, e.g. by curing or by ultrasonic bonding characterised by the properties of the layers
    • B32B37/16—Methods or apparatus for laminating, e.g. by curing or by ultrasonic bonding characterised by the properties of the layers with all layers existing as coherent layers before laminating
    • B32B37/20—Methods or apparatus for laminating, e.g. by curing or by ultrasonic bonding characterised by the properties of the layers with all layers existing as coherent layers before laminating involving the assembly of continuous webs only
    • B32B37/203—One or more of the layers being plastic
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K2102/00—Constructional details relating to the organic devices covered by this subclass
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00—Organic light-emitting devices
    • H10K50/80—Constructional details
    • H10K50/84—Passivation; Containers; Encapsulations
    • H10K50/841—Self-supporting sealing arrangements
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/80—Constructional details
    • H10K59/87—Passivation; Containers; Encapsulations
    • H10K59/871—Self-supporting sealing arrangements
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/549—Organic PV cells
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
    • Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
    • Y02P70/50—Manufacturing or production processes characterised by the final manufactured product

Landscapes

  • Engineering & Computer Science (AREA)
  • Mechanical Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Optics & Photonics (AREA)
  • Manufacturing & Machinery (AREA)
  • General Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Electroluminescent Light Sources (AREA)
  • Shaping Of Tube Ends By Bending Or Straightening (AREA)
  • Laminated Bodies (AREA)

Abstract

A method for manufacturing a member having an irregular pattern comprises the steps of: forming a first film (60) on an irregular pattern of a mold (140) having the irregular pattern formed on the surface thereof; forming a second film (70) on a base material (40); overlaying the mold (140) on the base material (40) to bond the first film (60) and the second film (70) to each other; and removing the mold (140) from the first film (60) that has been bonded to the second film (70). A method for manufacturing a functional member having an irregular pattern is provided.

Description

The manufacture method of the component with relief pattern
Technical field
The present invention is with regard to a kind of manufacture method of the component with relief pattern.
Background technology
Method as the fine relief pattern such as semiconductor integrated circuit is formed, in addition to lithography, it is known that There is nano-imprint method.Nano-imprint method is to clamp resin by using mould (mold) and substrate, can be by nano level pattern certainly Mould is transferred to the technology on substrate, and according to different using material, and hot nano impression method, light nano-imprint method etc. are carried out Research.Wherein, light nano-imprint method is from i) being coated with hardening resin layer, ii) to hardening resin layer press compression mould, iii) harden Property resin bed photo-hardening and iv) self-hardening resin bed peels off the four steps of mould and constituted, in can by it is this kind of simply Technique realizes that the aspect of the processing of nano-scale is more excellent.It is particularly due to using the photo-hardening hardened by light irradiation Resin, so the time spent by pattern transfer step is shorter, can expect high production capacity (throughput).Therefore, not only in half Conductor device, also treats practical in more multi-field mid-terms such as the optical component such as organic EL element or LED, MEMS, biochips.
For example in organic EL element (Organic Light Emitting Diode), the electric hole entered by electric hole implanted layer from anode with The electronics entered by electron injecting layer from negative electrode is transported to respectively luminescent layer, should be equal on the organic molecule in luminescent layer Carry out in conjunction with and excite organic molecule, thus launching light.Therefore, learn in patent document 1, in being made using organic EL element For display device or lighting device when, it is necessary to the light for carrying out light emitting layer is expeditiously extracted from element surface, for this purpose, will with into Substrate for the fine relief pattern of diffraction grating is arranged at the light extraction face of organic EL element.
And say, industry start to adopt light weight and replace for film base materials such as pliability and resins for being capable of achieving to maximize compared with Weight, base material of the glass substrate as organic EL element for being easily broken and being difficult to large area.However, with glass substrate phase Than the barrier properties for gases of the film base material such as resin is poor.Organic EL element makes brightness or luminous because of moisture or oxygen due to existing The situation of the reductions such as efficiency, so especially when using resin film base material as the situation of base material, in order to prevent by moisture or oxygen Deterioration caused by the gases such as gas, and gas-barrier layer must be formed on base material.For example in tangible described in patent document 2,3 Into following gas-barrier layer, it passes through sputtering method, vacuum vapour deposition, ion plating method, plasma-based CVD etc. and is formed by inoranic membrane.
Prior art document
Patent document
The Japanese Unexamined Patent Publication 2006-236748 publications of patent document 1
The Japanese Unexamined Patent Publication 2011-102042 publications of patent document 2
The Japanese Unexamined Patent Publication 2013-253319 publications of patent document 3
The content of the invention
The invention problem to be solved
Industry expected by arranging the substrate with relief pattern as mentioned above in organic EL element, and from organic EL Element expeditiously extracts light.Also, also expect by arranging the layer with excellent barrier properties for gases in organic EL element, and Make organic EL element long lifetime.For the viewpoint of production efficiency, advantageously in order to realize the efficient of organic EL element The light extraction of rate and long lifetime, and relief pattern is set in gas barrier layer surface.However, due to by dry type works such as sputters Skill and the inoranic membrane that formed is hard, so also existing in known nano-imprint method relief pattern cannot be formed in surface Problem.
It is an object of the invention to provide a kind of manufacture possesses surface and is formed with the functions such as the gas-barrier layer of relief pattern The method of the functional component of layer.Also, another object of the present invention is to provide one kind possess formed by dry process and Surface is formed with the manufacture method of the component of the film of relief pattern.
Solve the technological means of problem
According to the 1st pattern of the present invention, there is provided a kind of manufacture method of the component with relief pattern, it has following step Suddenly：
Have in surface relief pattern mould above-mentioned relief pattern on formed 1 film the step of；
The step of 2 film being formed on base material；
By making above-mentioned mould Chong Die with above-mentioned base material, the step of above-mentioned 1st film is engaged with above-mentioned 2nd film；And
Above-mentioned mould is peeled off from above-mentioned 1st film engaged with above-mentioned 2nd film the step of.
The manufacture method of the above-mentioned component with relief pattern also can further have following steps：Walk in above-mentioned engagement is implemented Before rapid, on above-mentioned 2nd film on above-mentioned 1st film or above-mentioned base material on above-mentioned mould solid is coated with.
The manufacture method of the above-mentioned component with relief pattern can further have before above-mentioned engagement step, in above-mentioned mould The step of other films being formed on above-mentioned 2nd film on above-mentioned 1st film and/or above-mentioned base material on tool.
According to the 2nd pattern of the present invention, there is provided a kind of manufacture method of the component with relief pattern, it has following step Suddenly：Have in surface on the above-mentioned relief pattern of mould of relief pattern, the step of form 1 film by dry process；
The step of the above-mentioned 1st film side engagement base material of above-mentioned mould；And
By above-mentioned mould from above-mentioned 1st film peel off the step of.
The manufacture method of the above-mentioned component with relief pattern also can further have following steps：Walk in above-mentioned engagement is implemented Before rapid, it is being engaged on the face of the above-mentioned base material of the above-mentioned 1st film side of above-mentioned mould or the 1st film side coating of above-mentioned mould connects Agent.
The manufacture method of the above-mentioned component with relief pattern also can further have following steps：In the above-mentioned of above-mentioned mould On above-mentioned 1st film formed on relief pattern, other films are formed by dry process and/or wet process.
In the above-mentioned 1st film forming step of the manufacture method of the above-mentioned component with relief pattern, also can be by using Silica, silicon oxynitride or silicon nitride film forming are formed above-mentioned 1st film by above-mentioned dry process.
The manufacture method of the above-mentioned component with relief pattern also can have before the above-mentioned engagement step of enforcement in above-mentioned base The step of 2 film being formed on material.
In the manufacture method of the above-mentioned component with relief pattern, the vapor of above-mentioned 1st film and/or above-mentioned 2nd film Penetrance can be 10- 2g·m- 2·day- 1Below.
In the manufacture method of the above-mentioned component with relief pattern, by above-mentioned 1st film and above-mentioned 1st film it is above-mentioned its The 1st gas-barrier layer and/or the vapor transmission rate of the 2nd gas-barrier layer being made up of above-mentioned 2nd film that his film is constituted Can be 10- 2g·m- 2·day- 1Below.
In the manufacture method of the above-mentioned component with relief pattern, the convex portion of the above-mentioned relief pattern of above-mentioned mould and recessed Portion
There is respectively bending and the elongated shape for extending when i) overlooking, and
Ii) bearing of trend, flexure direction and length can heterogeneities.
In the manufacture method of the above-mentioned component with relief pattern, the above-mentioned relief pattern of above-mentioned mould is irregular Relief pattern, concavo-convex average headway is the scope of 100～1500nm, the mean value of concavo-convex depth profile can for 20～ In the range of 200nm.
In the manufacture method of the above-mentioned component with relief pattern, the Fourier of the convex and concave analysis image of above-mentioned mould becomes Change as showing with the absolute value of wave number as 0 μm- 1Origin as the round shape of approximate centre or the grain pattern of annular shape, above-mentioned circle The grain pattern of shape or annular shape may be present in the absolute value of wave number becomes 10 μm- 1Area below.
According to the 3rd pattern of the present invention, there is provided a kind of component with relief pattern, it passes through the 1st pattern or the 2nd pattern The manufacture method with the component of relief pattern and manufacture.
The above-mentioned component with relief pattern has gas-barrier layer, and above-mentioned 1st film can be contained in above-mentioned gas barrier layer In.
In the above-mentioned component with relief pattern, the vapor transmission rate of above-mentioned gas barrier layer can be 10- 2g·m- 2·day- 1Below.
According to the 4th pattern of the present invention, there is provided a kind of organic EL element, it is in the structure with relief pattern of the 3rd pattern On part, sequentially the electrode of lamination the 1st, organic layer and metal electrode and formed.
The effect of invention
In the manufacture method of the component with relief pattern (sag and swell) of the 1st pattern of the present invention, in the recessed of mould The 1st film (the 1st functional layer) is formed on convex pattern, the 2nd film (the 2nd functional layer) is formed on base material, by making mould and base material weight Fold and engage the 1st film with the 2nd film, so to the 1st film and the material and film build method less-restrictive of the 2nd film, tool can be manufactured There is the functional component of excellent function.Also, in the manufacture method of the component with relief pattern of the 2nd pattern of the present invention, Relief pattern is directly formed in the surface of the 1st film formed by dry process, so production efficiency is higher.Grade manufacturer Method produces the photolithography of a large amount of waste liquids due to not using, and is formed and have bump maps by the relief pattern transfer by mould The component of case, so it is less to the load of environment.In the manufacture method of the present invention, by forming the film with barrier properties for gases As the 1st film and/or the 2nd film, the gas barrier component with relief pattern can be manufactured.Especially in the shape by dry process Into the 1st film situation when, the barrier properties for gases of the gas-barrier layer containing the 1st film is especially excellent.This kind of gas barrier component by In being formed with relief pattern, so light extraction efficiency is higher.Therefore, the light-emitting component for being manufactured using the component suppress by moisture or Deterioration caused by the gases such as oxygen and be the long-life, and with higher luminous efficiency.Therefore, it is of the invention with bump maps The manufacture method of the component of case becomes to the gas barrier component used in the various devices such as organic EL element or solar cell Manufacture it is effective.Also, this kind of gas barrier component also may be suitably used to the packaging of article, for preventing food or industrial goods And the rotten packaging applicationss of pharmaceuticals etc..
Description of the drawings
Fig. 1 (a) is the general of the component that obtained by the manufacture method with the component of relief pattern of the 1st embodiment Sectional view is omited, Fig. 1 (b) is the component obtained by the manufacture method with the component of relief pattern of the 1st deformation form General profile chart.
Fig. 2 (a) is the approximate vertical view of the relief pattern of the component obtained by the manufacture method of the 1st embodiment, Fig. 2 (b) represents the online Soil profile of the cut-out in the approximate vertical view of Fig. 2 (a).
Fig. 3 represents the example of the Fourier transform picture of the convex and concave analysis image on the 1st film surface.
Fig. 4 represents the flow chart of the manufacture method of the component with relief pattern of the 1st embodiment.
Fig. 5 (a)～(d) conceptually represents each of the manufacture method of the component with relief pattern of the 1st embodiment The figure of step.
The 1st film forming step, engagement step and strip step in the manufacture method of Fig. 6 (a) the 1st embodiments of expression The concept map of of situation, Fig. 6 (b) represents solid application step, the engagement step in the manufacture method of the 1st deformation form And the concept map of of the situation of strip step.
Fig. 7 conceptually represents membranaceous mould or can be used to fill the sputter of the 1st film or the 2nd film film forming on film-like substrate The figure put.
The outline of the component that Fig. 8 (a) is obtained by the manufacture method with the component of relief pattern of the 2nd embodiment Sectional view, the outline of the component that Fig. 8 (b) is obtained by the manufacture method with the component of relief pattern of the 4th deformation form Sectional view.
Fig. 9 represents the flow chart of the manufacture method of the component with relief pattern of the 2nd embodiment.
Figure 10 (a)～(d) conceptually represents each of the manufacture method of the component with relief pattern of the 2nd embodiment The figure of step.
Solid application step, engagement step and strip step in the manufacture method of Figure 11 (a) the 2nd embodiments of expression The concept map of of situation, Figure 11 (b) represents solid application step, engagement in the manufacture method of the 4th deformation form The concept map of of the situation of step and strip step.
Figure 12 (a) is conceptually represented using the gas barrier component manufactured by the manufacture method of the 1st embodiment The figure of the profile construction of the light-emitting component of formation, Figure 12 (b) is conceptually represented using by the manufacture method of the 1st deformation form And the figure of the profile construction of the light-emitting component that the gas barrier component for manufacturing is formed.
Figure 13 (a) is conceptually represented using the gas barrier component manufactured by the manufacture method of the 2nd embodiment The figure of the profile construction of the light-emitting component of formation, Figure 13 (b) is conceptually represented using by the manufacture method of the 4th deformation form And the figure of the profile construction of the light-emitting component that the gas barrier component for manufacturing is formed.
Reference numeral explanation：
30：Adhesion agent layer
40：Base material
60：1st film
70：2nd film
80：Relief pattern
92：1st electrode
94：Organic layer
98：2nd electrode
100、100a、300、300a：Gas barrier component
101：Containment member
103：Sealing adhesion agent layer
140：Mould
200、200a、400、400a：Light-emitting component
330：Adhesion agent layer
340：Base material
360：1st film
370：2nd film
380：Relief pattern
Specific embodiment
Hereinafter, simultaneously with reference to schema, one in the face of the component with sag and swell (relief pattern) of the present invention, with concavo-convex The embodiment of the manufacture method of the component of construction and the light-emitting component manufactured using the component with sag and swell is said It is bright.Hereinafter, to film of the formation with barrier properties for gases in the 1st embodiment of the manufacture method of the present invention as the 1st film (the 1 functional layer) and the 2nd film (the 2nd functional layer) and manufacture the situation of gas barrier component and the manufacture method of the present invention it is the 2nd real Film of the formation with barrier properties for gases applied in form manufactures the situation of gas barrier component as the 1st film (the 1st functional layer) Illustrate, but as described below, above-mentioned 1st film and/or the 2nd film are not limited to the film with barrier properties for gases, can be with The film of various functions, thus can manufacture the component with various functions.Also, manufactured component is not limited to light-emitting component, Can be applicable to various uses.
[the 1st gas barrier component]
Obtain with regard to the 1st embodiment of the manufacture method by following gas barrier components with relief pattern Shown in gas barrier component 100 with sag and swell (relief pattern) 80, such as Fig. 1 (a), the is sequentially formed on base material 40 The film (the 1st gas-barrier layer) 60 of 2 films (the 2nd gas-barrier layer) the 70 and the 1st.With regard to by following resistances of the gas with relief pattern Every the gas barrier component 100a that the 1st deformation form of the manufacture method of component is obtained, shown in such as Fig. 1 (b), on base material 40 The 2nd film 70 is formed, and the 1st film 60 is formed with via adhesion agent layer 30 on the 2nd film 70.
＜ base material ＞
Used as base material 40, there is no particular restriction, can suitably using the known transparency carrier that can be used in light-emitting component.Base Material 40 can be the substrate of hard, also can be with flexual membranaceous substrate, for example, can to use by transparent inorganic materials such as glass The substrate for being constituted or the substrate that is made up of resin etc..The substrate being made up of resin is, for example, polyester (poly terephthalic acid Second diester, polybutylene terephthalate, PEN, polyarylate etc.), acrylic resin (polymethyl Sour methyl esters etc.), Merlon, polyvinyl chloride, phenylethylene resin series (ABS resin etc.), cellulose-based resin (triacetyl cellulose Deng), polyimides system resins (polyimide resin, polyimide amide resin etc.), cyclic olefin polymer etc..In using gas Obstruction member 100 as the optical substrate of light-emitting component situation when, base material 40 is more satisfactory to possess heat resistance, to UV light etc. The base material of weatherability.Should etc. for aspect, the base material being more preferably made up of inorganic material such as glass or quartz base plates.Especially It is when the situation that the 1st film 60 is formed by inorganic material, if base material 40 is formed by inorganic material, in base material 40 and the 1st The difference of refractive index is less between film 60, when using gas barrier component 100 as the situation of the optical substrate of light-emitting component, can Unexpected refraction or the reflection in light-emitting component is prevented, so preferably.In order to improve adhesion, also can be carried out on base material 40 The operation such as surface-treated layer or easy following layer is set.Also, the projection in order to fill substrate surface, can also be configured smoothing layer Deng operation.The thickness of base material 40 is preferably in the range of 1 μm～20mm.
The film ＞ of ＜ the 1st
Gas barrier component 100 possesses the 1st film 60 as the 1st gas-barrier layer for penetrating for stopping oxygen and vapor. 1st film 60 can be made up of inorganic material or organic material (resin material).As inorganic material, preferably inorganic oxide, nothing Machine nitride, inorganic nitrogen oxides, inorganic sulphide, inorganic carbide etc., so preferably silica, aluminum oxide, magnesia, Zinc oxide, indium oxide, tin oxide, titanium oxide, cupric oxide, cerium oxide, tantalum oxide, zirconium oxide, tin indium oxide, barium titanate, metatitanic acid Strontium, silicon nitride, silicon oxynitride, aluminum oxynitride, zinc sulphide etc..As organic material, can enumerate：Can be used as the close of organic EL element The material of envelope material etc, XNR5516Z, ThreeBond company of such as Chang Lai industries limited company manufacture manufacture CELVENUS H001 of TB3124, Daicel company manufacture etc..
Further, the 1st film 60 also can be to make above-mentioned inorganic material or organic material contain ultraviolet absorption material to form, ultraviolet Line absorption material have by absorb ultraviolet and convert light energy into as heat harmless form, and suppress film deterioration work With.As ultra-violet absorber, for example can be absorbed using enumerate BTA system absorbent, triazine system using all the time known Agent, salicyclic acid derivatives system absorbent, benzophenone series absorbent etc..
Due to gas barrier component 100 have sufficient gas barrier property, so the vapor transmission rate of the 1st film 60 compared with Good is 10- 2g·m- 2·day- 1Below.
1st film 60 preferably light peneration.1st film 60 will be preferably for example in will determine penetrating when wavelength is set to 550nm Rate is more than 80%, and then preferably more than 90%.
The thickness of the 1st film 60 is preferably the scope of 5nm～20 μm.Furthermore, herein, the thickness of so-called 1st film 60 refers to the 1st The mean value of the bottom surface of film 60 to the distance on the surface for being formed with relief pattern 80.
1st film 60 is formed with fine relief pattern (sag and swell) 80 in surface.Fine relief pattern 80 can be set to Lens are constructed or with arbitrary graphic patterns such as the constructions of function such as light diffusion or diffraction.The bump maps of the 1st film 60 are represented in Fig. 2 (a) The Soil profile of the cutting line in the approximate vertical view of Fig. 2 (a) is represented in the example of the approximate vertical view of case 80, Fig. 2 (b).1st film 60 section shape is made up of as shown in Fig. 2 (b) relatively gentle inclined plane, and ripple can be upward presented from base material 40 Shape (is properly termed as " waveform construction ") in this case.That is, the convex portion of relief pattern 80 can have such as from the bottom court of the side of base material 40 The section shape narrowed to top.The relief pattern 80 of the 1st film 60 can have following feature：As represented in Fig. 2 (a) in vertical view There is multiple convex portions (white portion) and multiple recesses (black portions) to bend the thin of (sinuous) extension as the example of approximate vertical view Long shape, and its bearing of trend, the direction (flexure direction) of bending and development length are irregular.This kind of relief pattern 80 is substantially not Such as striped, waveform striped, the pattern for regularly carrying out orientation of sawtooth or the pattern of point-like are same as, can be with rule in this aspect The pattern of property or the circuit pattern containing a large amount of straight lines etc is distinguish between.With regard to the 1st film 60 with feature as above, It is easy to be cut off with any surface of the surface normal of base material 40, concave-convex profile also can repeat.Also, relief pattern 80 Multiple convex portions and recess when overlooking part or all can carry out branch in midway (with reference to Fig. 2 (a)).Furthermore, in Fig. 2 (a), The spacing of convex portion integrally looks more homogeneous.Also, the recess of relief pattern 80 can be divided by convex portion, and prolong along convex portion Stretch.
Relief pattern 80 in addition to irregular relief pattern as above, also can be set to a construction, prismatic construction, by Streaky structure that line and gap are constituted, cylindric, coniform, circular cone shape, triangle column, triangular pyramid, Rhizoma Sparganii frustum, The cylinders such as corner column, corner taper, quadrangular pyramid mesa-shaped, polygonal column, how pyramidal, polygonal frustum are constructed, hole constructs, micro- Number of lenses set constructor, with the arbitrary graphic pattern such as light diffusion or the construction of function such as diffraction.Also, also can be set to such as by sand-blast The irregular micro concavo-convex pattern for being formed.
Because the relief pattern 80 of the 1st film 60 plays a role as diffraction grating, so concavo-convex average headway is preferable It is in the range of 100～1500nm, if concavo-convex average headway does not reach above-mentioned lower limit, due to relative to the ripple of visible ray It is long and spacing becomes too small, so have the tendency of to produce by the diffraction of concavo-convex caused light, on the other hand, if exceeding upper Limit, then have diffraction angle to reduce, and loses the tendency of the function as diffraction grating.Concavo-convex average headway is more preferably 200～ The scope of 1200nm.The mean value of concavo-convex depth profile is preferably the scope of 20～200nm.If concavo-convex depth profile is flat Average does not reach above-mentioned lower limit, then due to the wavelength relative to visible ray, depth is too small, so have that required diffraction will not be produced Tendency, on the other hand, if exceeding the upper limit, diffraction luminous intensity produces uneven, and its result is, such as in using gas barrier structure Part 100 make organic EL element situation when, due to the Electric Field Distribution inside the organic layer of organic EL element become it is uneven and Electric field is set to concentrate on specific position, so have the tendency of easily to produce leakage current or lifetime.Concavo-convex depth profile Mean value is more preferably the scope of 30～150nm.The standard deviation of concavo-convex depth is preferably the scope of 10～100nm.If concavo-convex The standard deviation of depth do not reach above-mentioned lower limit, then due to the wavelength relative to visible ray, depth is too small, so have to produce The tendency of the diffraction needed for raw, on the other hand, if exceeding the upper limit, diffraction luminous intensity produces uneven, and its result is, such as in making When making the situation of organic EL element with gas barrier component 100, due to the Electric Field Distribution inside the organic layer of organic EL element Become uneven and make electric field concentrate on specific position, so have the tendency of easily to produce leakage current or lifetime.It is concavo-convex The standard deviation of depth be more preferably the scope of 15～75nm.
In this case, so-called concavo-convex average headway, in the concavo-convex spacing to forming irregular surface, (adjacent is convex Portion each other or the adjacent mutual interval of recess) be measured situation when, refer to the mean value of concavo-convex spacing.It is this kind of concavo-convex The mean value of spacing can be calculated by the following method：Using scanning type probe microscope (such as Hitachi High-Tech Product name " E-sweep " of Science limited companies manufacture etc.), with following conditions：
Mensuration mode：The cantilever discontinuity way of contact
The material of cantilever：Silicon
The arm width of cantilever：40μm
The diameter of the chip front end of cantilever：10nm,
Analysis surface concavo-convex and obtain convex and concave analysis image, determine arbitrarily adjacent in the convex and concave analysis image thereafter Each other or more than 100 points of the adjacent mutual interval of recess, and obtain its arithmetic mean of instantaneous value in convex portion.
Also, in this case, the concavo-convex mean value of depth profile and the standard deviation of concavo-convex depth can be calculated as follows Go out.Using scanning type probe microscope (such as product of Hitachi High-Tech Science limited companies manufacture Name " E-sweep " etc.), to any 3 μm of square (vertical 3 μm, horizontal 3 μm) or 10 μm of square (vertical 10 μm, horizontal 10 μ under above-mentioned condition The concaveconvex shape on the surface of mensuration region m) is measured, and obtains convex and concave analysis image.Now obtained respectively with nanoscale The data of the height of concave convex of the measuring point more than 16384 points (vertical 128 points × horizontal 128 points) in mensuration region.Furthermore, this kind of survey The quantity of fixed point is according to the species for determining device for being used or sets also different, such as in using above-mentioned Hitachi The product name " E-sweep " of High-Tech Science limited companies manufacture as measure device situation when, can be in The measure of (vertical) is carried out in the mensuration region of 3 μm of square at 65536 points at 256 points × horizontal 256 points (in the resolution of 256 × 256 pixels Under measure).Also, with regard to the height of concave convex (unit for determining in the above described manner：Nm), first, in obtaining whole measuring points Away from the height highest measuring point P of substrate surface.Then, using containing measuring point P and the face parallel with the surface of base material as Datum level (horizontal plane), the value for obtaining the depth away from the datum level (deducts each measure from the value of the height away from base material of measuring point P Residual quantity obtained by the height away from base material of point) as the data of concavo-convex depth.Furthermore, this kind of concavo-convex depth data can be by determining Device (such as product name " E-sweep " of Hitachi High-Tech Science limited companies manufacture), using survey Determine software in device etc. automatically to be calculated and obtained, and the value that can be obtained this kind of automatically calculating is as recessed The data of convex depth.After obtaining the data of concavo-convex depth of each measuring point in the above described manner, being respectively adopted can be by obtaining its calculation Art mean value and standard deviation and the value that calculates are used as the mean value of concavo-convex depth profile and the standard deviation of concavo-convex depth.In In this specification, with regard to the standard deviation of concavo-convex average headway, the mean value of concavo-convex depth profile and concavo-convex depth, no matter How form the material on irregular surface, can be obtained by assay method as above.
Relief pattern 80 can be following Fictitious cycle pattern：The convex and concave analysis obtained to analyzing the concaveconvex shape on surface Image implements 2 and ties up high speed Fourier transform processings and the Fourier transform pictures that obtain show round shape as shown in Figure 3 or circle Although the distribution of the directive property of the direction of the grain pattern of ring-type, i.e. no concave-convex but the irregular spacing of tool.With this kind of Fictitious cycle As long as the distribution of the gas barrier component of pattern its concavo-convex spacing makes visible x-ray diffraction, then it is adapted to the face such as organic EL element and lights Diffraction substrate used in element.
Furthermore, Fourier transform as can as shown in Figure 3 as show with the absolute value of wave number as 0 μm- 1Origin as big The grain pattern of the round shape at cause center or the grain pattern of annular shape, above-mentioned round shape or annular shape may be present in the absolute value of wave number becomes 10 μ m- 1(more preferably 0.667～10 μm below- 1And then preferably 0.833～5 μm- 1In the range of) region in.Fourier transform The grain pattern that the grain pattern of the round shape of picture is observed in Fourier transform picture because bright spot enters row set.Herein indication is so-called " round Shape ", refers to that bright spot enters the shape that the grain pattern of row set appears as circular, is also that the part for including profile is looked Convex or concave concept is presented.Also there is bright spot and enter the grain pattern of row set and look substantially circular situation, and The situation is expressed as " annular shape ".Furthermore, " annular shape " is following concept：Both including ring outside circle or the circle of inner side Shape appears as the shape of circular, and also includes that a part for the profile of the circle of the circle or inner side in the outside of the ring is taken a fancy to Go that convex or concavity is presented.Also, so-called, " grain pattern of round shape or annular shape is present in the absolute value of wave number becomes 10 μm- 1Below (more preferably 0.667～10 μm- 1In the range of, and then preferably 0.833～5 μm- 1In the range of) region in ", refer to composition Fu In the bright spot of vertical leaf transformation picture more than 30% (more preferably more than 50% and then more preferably more than 80%, it is further preferred that for 90% with On) bright spot be present in the absolute value of wave number and become 10 μm- 1(more preferably 0.667～10 μm below- 1In the range of, and then preferably For 0.833～5 μm- 1In the range of) region in.Furthermore, with regard to the relation of relief pattern and Fourier transform picture, learn as Lower situation.When the situation of distribution of the relief pattern without spacing itself or directive property, Fourier transform picture is also with random figure Case (without grain pattern) manifests, in relief pattern in XY directions generally isotropism but when spacing aspect has the situation of distribution, Manifest the Fourier transform picture of circle or annular shape.Also, when relief pattern has the situation of single spacing, having in Fourier transform The annulus manifested as in becomes precipitous tendency.
2 dimension high speed Fourier transform processings of above-mentioned convex and concave analysis image can be become by using possessing 2 dimension high speed Fouriers The electronic image for changing the computer for processing software is processed and easily carried out.
Furthermore, composition that the 1st gas-barrier layer is only made up of the 1st film 60, i.e., the 1st gas barrier are represented in Fig. 1 (a) The composition that is made up of the individual layer of the 1st film 60 of layer, but the 1st gas-barrier layer also can be made up of following multilayer film, and it is by the 1st film 60 be formed at the 1st film 60 lower section (the 1st film 60 with base material 40 it is relative to side, i.e., between the 1st film 60 and the 2nd film 70) More than 1 layer different from the 1st film other films constituted.Be formed at the 1st film 60 lower section other films also can by with conduct Constitute above-mentioned 1st film material and illustrate material identical inorganic material, organic material or make this etc. contain ultraviolet radiation absorption Agent and winner is constituted.Also, also stress relaxation layer can be arranged between each layer.As stress relaxation layer, can using epoxy, third Olefin(e) acid system, metha crylic, vinethene system, oxetanes system, amine ester system, melamine series, urea system, Polyester, polyene The various resins such as monomer, oligomer, the polymer such as hydrocarbon system, phenol system, cross-linking type liquid crystal system, fluorine system, poly- silica system, polyamide-based Deng.
In the 1st gas-barrier layer for multilayer film situation when, in using gas barrier component as light-emitting component light When learning the situation of substrate, the 1st gas-barrier layer is preferably light peneration.1st gas-barrier layer is preferably for example in will determine ripple Penetrance when length is set to 550nm is more than 80%, and then preferably more than 90%.
When situation of the 1st gas-barrier layer for multilayer film, the thickness of the 1st gas-barrier layer is preferably 5nm～20 μm Scope.Furthermore, herein, the thickness of so-called 1st gas-barrier layer refers to the bottom surface of the 1st gas-barrier layer to being formed with relief pattern The mean value of the distance on 80 surface.
When situation of the 1st gas-barrier layer for multilayer film, because gas barrier component 100 has sufficient gas barrier Performance, so the vapor transmission rate of the 1st gas-barrier layer is preferably 10- 2g·m- 2·day- 1Below.When the situation, the 1st The vapor transmission rate of film also can be more than 10- 2g·m- 2·day- 1。
The film ＞ of ＜ the 2nd
In gas barrier component 100, the 2nd film 70 is formed with as the 2nd gas barrier between the film 60 of base material 40 and the 1st Layer.As the material for constituting the 2nd film 70, material identical inorganic material, the organic material that can be used with the 1st film 60 can be used (resin material) or this etc. is set to form containing ultra-violet absorber.
When using gas barrier component 100 as the situation of the optical substrate of light-emitting component, the 2nd film 70 preferably light Penetrability.Penetrance of 2nd film 70 preferably for example when measure wavelength is set into 550nm is more than 80%, and then preferably More than 90%.
The thickness of the 2nd film 70 is preferably the scope of 5nm～20 μm.
Furthermore, the composition that the 2nd gas-barrier layer is made up of the individual layer of the 2nd film 70 is represented in Fig. 1 (a), but the 2nd gas hinders Interlayer also can be made up of following multilayer film, and it is made up of the 2nd film 70 with other films of more than 1 layer different from the 2nd film 70. Other films also can be by being constituted with the material identical material illustrated as the material for constituting the 2nd film.Also, also can in each layer it Between stress relaxation layer is set.
In the 2nd gas-barrier layer for multilayer film situation when, in using gas barrier component as light-emitting component light When learning the situation of substrate, the 2nd gas-barrier layer is preferably light peneration.2nd gas-barrier layer is preferably for example in will determine ripple Penetrance when length is set to 550nm is more than 80%, and then preferably more than 90%.
When situation of the 2nd gas-barrier layer for multilayer film, the thickness of the 2nd gas-barrier layer is preferably 5nm～20 μm Scope.
When situation of the 2nd gas-barrier layer for multilayer film, because gas barrier component has sufficient barrier properties for gases Can, so the vapor transmission rate of the 2nd gas-barrier layer is preferably 10- 2g·m- 2·day- 1Below.When the situation, the 2nd film Vapor transmission rate also can be more than 10- 2g·m- 2·day- 1。
＜ adhesion agent layers ＞
As the gas barrier component 100a that gas barrier component also can be as shown in Fig. 1 (b), in the 1st film 60 and the 2nd film 70 it Between possess adhesion agent layer 30.That is, the 1st film 60 also can be engaged with the 2nd film 70 via adhesion agent layer 30.Adhesion agent layer 30 Thickness is preferably the scope of 500nm～20 μm.
As the material of adhesion agent layer 30, can and unrestrictedly use to glass, also, appointing of being usually used such as plastic base Meaning solid, for example, can enumerate：Polyvinyl acetate system solid, acrylic oligomers, metha crylic oligomer etc. The acrylic acid series solid of the photo-hardening with reaction-ity ethylene base and thermmohardening type, epoxy resin solid, 2- cyanoacrylates The solids such as the moisture-curable type such as acid esters, ethylene copolymer system solid, Polyester solid, polyimides system solid, by Amine resin system solid that carbamide resin or melmac etc. are constituted, phenol resin system solid, Polyurethane system solid, Response type (methyl) acrylic acid series solid, rubber series solid, vinethene system solid, poly- silica system solid etc., as Preferred solid, can enumerate：Acrylic acid series solid, epoxy solid etc..It is further preferred that for hardening when the less ring of contraction Oxygen system solid.When the situation of gas barrier component 100a used in the optical elements such as organic EL element, adhesion agent layer 30 Also can be made up of the material of the sealing material that can be used as organic EL element.
As epoxy solid, epoxy resin component can be listed below, its by the compound containing epoxy radicals with contain There is the mixed merga pass sclerous reaction of curing agent of amine or acid anhydrides and carry out then, and be made up of epoxy resin and curing agent. As the epoxy solid that can be used in this embodiment, specifically, for example, have：Cemedine limited companies manufacture Cemedine EP-001,3950 series of ThreeBond limited companies manufacture, 3950,3951,3952,2080 be Row, 2083,2086,2087, also, 2230 series, 2230,2230B, 3124C, Konishi limited companies manufacture Bond MOS series, MOS07, MOS10, Dong Bang chemical conversion industries limited company Ultite1500 series, Ultite1540 etc., also, Nagase chemtex limited companies manufacture XNR5576/5576LV, XNR5516/5516HV/5516Z, XNR5570, T470/UR7116, T470/UR7134, T470/UR7132, T470/UR7124E-LV, the NOA81 of Norland companies manufacture, The KR-508 of Adeka Corp.'s manufacture, the CELVENUS-HBF series of Daicel limited companies manufacture, CELVENUS-HRF series etc..
As acrylic acid series solid, for example can enumerate by acrylic adhesive composition, energy line hardening composition and The thermmohardening type solid that then composition is constituted.As the concrete example of the grade, can enumerate：ThreeBond limited companies Manufacture 3003,3027B, 3033B, 3042B etc., also, the Cemedine Y600 of Cemedine limited companies manufacture, WORLD ROCK No.0555 of Y600H, Xie Li Chemical Industries limited company manufacture etc..
In addition, as rubber series solid, for example, can be listed below：In selected from cis- 1,4- polyisoprene Natural rubber as principal component, using SBR styrene butadiene rubberses (SBR), polyisobutene, butyl rubber etc. as principal component Synthetic rubber or with s-B-S combined polymerization rubber (SBS), styrene-isoprene-phenylethene During combined polymerization rubber (SIS) etc. is as at least one adherence elastomer in the block rubber etc. of principal component, conduct is allocated For liquid or solid and molecular weight it is that hundreds of to about 10,000 amorphous oligomer, (middle-molecular-weihydroxyethyls more than 2 polymers is gathered under normal temperature Compound) the rosin system resin of thermoplastic resin, terpenic series resin, Petropols, benzo dihydro piperazine mutter-indene resin etc. then Softening agent such as imparting agent and mineral oil, liquid polybutene, liquid polyisobutene, liquid polyacrylate etc. is formed.
As vinethene system solid, for example, can use by methoxy ethylene, vinyl ethyl ether, VINYL ISOBUTYL ETHER etc. Polymers or the solid constituted with the copolymer (adherence elastomer) of acrylate etc., also visual situation allocate in the grade Above-mentioned then imparting agent, softening agent etc..
Also, as poly- silica system solid, such as can be recited in the dimethyl silicone polymer of HMW or poly- two Methyldiphenyl radical siloxane is polymer (or the adherence that the end of the polymer chain of representative has residual silanol groups (SiOH) Elastomer) in the above-mentioned then imparting agent of allotment, softening agent etc. form.
As the material of the sealing material that can be used as organic EL element, such as You Changlai industries limited company manufacture CELVENUS H001 of TB3124, Daicel company manufacture of XNR5516Z, ThreeBond company manufacture etc..
[the 1st embodiment of the manufacture method of gas barrier component]
1st embodiment of the manufacture method of gas barrier component is illustrated.The manufacture method of gas barrier component As shown in figure 4, mainly having following steps：The step of 1 film is formed on the relief pattern of the mould with relief pattern S1； The step of 2 film is formed on base material S2；The step of 1st film is engaged with the 2nd film S3；And the step for peeling off mould from the 1st film Rapid S4.Hereinafter, the mould with relief pattern and its manufacture method are illustrated first, simultaneously with reference to Fig. 5 (a)～(d) Face sequentially illustrates to above steps S1～S4.
＜ has the mould ＞ of relief pattern
Mould used in the manufacture method of the gas barrier component of the 1st embodiment has and the as above 1st Corresponding (relief pattern of the 1st film is inverted into the it) relief pattern of the relief pattern of film.For example, the relief pattern of mould can be Following Fictitious cycle pattern：The convex and concave analysis image obtained to analyzing the concaveconvex shape on surface implements 2 and ties up high speed Fourier Although conversion process and the Fourier transform picture that obtains show grain pattern such as round shape or annular shape, the i.e. direction of no concave-convex The distribution of directive property but the irregular spacing of tool.Also, Fourier transform picture is shown with the absolute value of wave number as 0 μm- 1Origin The grain pattern of round shape or annular shape as approximate centre, and the grain pattern of above-mentioned round shape or annular shape may be present in the absolute value of wave number Become 10 μm- 1(more preferably 0.667～10 μm below- 1And then preferably 0.833～5 μm- 1In the range of) region in.Make It is the mould with this kind of relief pattern, such as containing the metal die or membranaceous resin die manufactured by following method Deng.The also rubber containing natural rubber or synthetic rubber etc in the resin for constituting resin die.
The example of the manufacture method of mould is illustrated.First, the master mold figure for forming the relief pattern of mould is carried out The making of case.For example, have in manufacture concavo-convex by what is constituted along the curvilinear convex portion of uneven direction extension and recess It is conveniently described in No. WO2012/096368 using applicant in this case Dengs during the situation of the gas barrier component of pattern Utilization block copolymer the self-organizing (microphase-separated) caused because of heating method (below, properly termed as " BCP (Block Copolymer) thermal annealing method ") or utilization block copolymer described in No. WO2013/161454 solvent The method (below, properly termed as " BCP solvent anneal methods ") of the self-organizing under atmosphere is taken off in WO2011/007878A1 That what is shown forms the concavo-convex side caused by the gauffer because of polymer surfaces by heating the evaporation film on polymer film, cooling down Method (below, properly termed as " BKL (Buckling) method ") and formed master mold.In by BCP thermal annealing methods and BCP solvent anneal methods When forming the situation of pattern, forming the material of pattern can use any materials, but preferably by selected from such as the benzene of polystyrene It is the polyalkyl methacrylate of ethylene-based polymer, such as polymethyl methacrylate, PEO, polybutadiene, poly- different 2 kinds in the group that pentadiene, polyvinylpyridine and PLA are constituted combine constituted block copolymer.By this etc. The self-organizing of material and the pattern that formed are preferably such as Horizontal Cylinder construction (cylinder described in No. WO2013/161454 Body phase flatly carries out the construction of orientation for base material) or as described vertical in Macromolecules 2014,47,2 Bedded structure (lamina vertically carries out the construction of orientation relative to base material).When deeper concavo-convex situation is formed, more preferably For vertical layer construction.Also, also can be to the relief pattern of the acquisition by solvent anneal process, by irradiating with Excimer uv light It is etched Deng energy line of the ultraviolet for representative, or the dry type erosion etched by such as RIE (reactive ion etching), ICP Lithography and be etched.Also, also can implement to heat to the relief pattern for carrying out above-mentioned etching.Further, can be by such as Adv.Mater.2012,24,5688-5694, Science322, described method in 429 (2008) etc., based on by BCP Thermal annealing method or BCP solvent anneals method and the relief pattern that formed, form the bigger relief pattern of concavo-convex depth.That is, Yu You SiO2, be coated with block copolymer on the bottom that constituted such as Si, form embedding by BCP thermal annealing methods or BCP solvent anneals method The self-organizing construction of section copolymer.Then, optionally a fragment of block copolymer is etched and is removed.Will be remaining Another fragment is etched as mask to bottom, and forms required depth groove (recess) in bottom.
Also BCP thermal annealing methods as above, BKL methods and BCP solvent anneal methods can be replaced, forms recessed by photolithography Convex pattern.In addition, for example also can be visited by machining method, electron beam direct drawing method, particle beams processing method and scanning Any means such as the micro-machining process such as pin processing method, the micro-machining process using atomic self-organizing, sand-blast, make master mold Relief pattern.In using Making mold have by the linear or curvilinear convex portion and recess institute extended along uniform direction During the situation of the component (gas barrier component) of the relief pattern of composition, also can be formed and had by along uniform using the method such as this The linear or curvilinear convex portion that extends of direction and the master mold of relief pattern that constituted of recess.
After the master mold by BCP thermal annealing methods or the formation relief pattern such as BKL methods or BCP solvent anneal methods, Ke Yiru Under type is formed by electrocasting etc. and then transfers figuratum mould.First, can be equal to by electroless plating, sputter or evaporation Has the inculating crystal layer that the conductive layer processed for electroforming is formed on figuratum master mold.With regard to inculating crystal layer, in order that follow-up Current density in electroforming step becomes uniform, and making the thickness of the metal level by follow-up electroforming step depositing becomes certain, compared with It is good for more than 10nm.As the material of inculating crystal layer, for example, can use nickel, copper, gold, silver, platinum, titanium, cobalt, tin, lead, chromium, gold-cobalt Alloy, gold-nickel alloy, boron-nickel alloy, scolding tin, copper-nickel-chromium alloy, tin-nickel alloy, nickel-palladium alloy, nickel-cobalt-phosphorus Alloy or this etc. alloy etc..Secondly, metal level depositing is made on inculating crystal layer by electroforming (electric field plating).With regard to metal level Thickness, 10～3000 μm of thickness for example can be set to including entirety including the thickness of inculating crystal layer.As the depositing by electroforming Metal level material, can use can be used as inculating crystal layer above-mentioned metal kind any one.With regard to follow-up for forming mould The compressing of resin bed, peel off and clean etc. for the easiness of process, it is with the hard of appropriateness that the metal level for being formed is more satisfactory Degree and thickness.
Metal level containing the inculating crystal layer for obtaining in the above described manner is peeled off from the master mold with sag and swell and gold is obtained Category substrate.Metal substrate can be peeled off with physical method from master mold, also can be made by the material of the relief pattern to forming master mold Removed with the organic solvent of the grade dissolving, such as toluene, tetrahydrofuran (THF), chloroform etc. are dissolved, so as to by metal Substrate is peeled off from master mold.When metal substrate is peeled off from master mold, the material composition for being remained can be removed by cleaning.Make For method of cleaning, using the washing drying using interfacial agent etc. or using ultraviolet or the thermal drying of plasma-based.Also, example As can be also carried out operating the material composition for being remained attachment removal etc. using adhesive agent or solid.So obtain from master mold The metal substrate (metal die) of transfer pattern can be used as the mould of the relief pattern transfer of this embodiment.
Further, by using the metal substrate for being obtained, the sag and swell (pattern) of metal substrate is needed on membranaceous Substrate is supported, can make have such as membranaceous mould flexual mould.For example, in hardening resin is coated into support substrate Afterwards, the sag and swell of metal substrate is simultaneously pressed against resin is laminated to harden resin bed.As substrate is supported, for example, can arrange Lift：The base material being made up of inorganic material such as glass, quartz, silicon；By polysilicone, PET (PET), PEN (PEN), Merlon (PC), cyclic olefin polymer (COP), polymethyl methacrylate (PMMA), The base material that the organic materials such as polystyrene (PS), polyimides (PI), polyarylate are constituted；By the metal materials such as nickel, copper, aluminium institute The base material of composition.Also, supporting the thickness of substrate can be set to 1～500 μm of scope.
As hardening resin, for example, can enumerate：Epoxy, acrylic acid series, metha crylic, vinethene system, oxa- Cyclobutane system, amine ester system, melamine series, urea system, Polyester, polyolefin, phenol system, cross-linking type liquid crystal system, fluorine system, poly- silica The various resins such as monomer, oligomer, the polymer such as system, polyamide-based.The thickness of hardening resin is preferably 0.5～500 μm In the range of.If thickness does not reach above-mentioned lower limit, being formed at the concavo-convex height on the surface of hard resin-layer easily becomes not enough, if More than the above-mentioned upper limit, it is likely that the impact of the Volume Changes of the resin produced when hardening increases and cannot well form recessed Convex form.
As the method for coating hardening resin, for example, can adopt method of spin coating, spraying process, Dipcoat method, dropwise addition Method, woodburytype, screen painting method, toppan printing, mould mouth rubbing method, curtain method, ink-jet method, sputtering method etc. are each Plant coating process.It is further, different according to the species of the resin for being used as the condition for hardening hardening resin, It is that in the range of room temperature～250 DEG C, firm time is in the range of 0.5 minute～3 hours to be for example preferably hardening temperature.Also, Also can be for by irradiating the method for making its hardening such as the energy line of ultraviolet or electron beam, when the situation, exposure be preferable For 20mJ/cm2～5J/cm2In the range of.
Then, the hard resin-layer after self-hardening is by metal substrate removal.As by the removal method of metal substrate, not The stripping method of machinery is defined in, known method can be adopted.Have on support substrate obtained by so and form irregular The membranaceous resin die of hard resin-layer can be used as the mould of the relief pattern transfer of this embodiment.
Also, being coated with the resinous wood of rubber series on the sag and swell (pattern) of the metal substrate obtained by said method Material, hardens be coated with resin material, and peels off from metal substrate, thus can make and transfer the relief pattern of metal substrate Rubber mold.The rubber mold for being obtained can be used as the mould of the relief pattern transfer of this embodiment.Rubber series Resin material it is further preferred that for the mixture or copolymer of poly- silicone rubber or poly- silicone rubber and other materials.As poly- silicon Oxygen rubber, for example can using polysiloxane, cross-linking type polysiloxane, polysiloxane/Copolycarbonate, Polysiloxane/polyphenylene copolymerized, polysiloxane/polystyrene copolymer, poly- trimethyl silicon substrate propylene, poly- 4- first Base amylene etc..Poly- silicone rubber is due to relatively cheap compared with other resin materials, and excellent heat resistance, and thermal conductivity is higher, there is bullet Property, also it is unlikely to deform under hot conditions, therefore be adapted to carry out the situation of relief pattern transfer printing process under the high temperature conditions.Enter And, the material of poly- silicone rubber system is higher due to gas or water vapor permeability, so steam can the solvent that be transferred material or water Gas is readily penetrated through.Therefore, it is as described below, in order on the film of the precursor solution of inorganic material transfer relief pattern and make During with the situation of rubber mold, the material of preferably poly- silicone rubber system.Also, the surface free energy of rubber-based material is preferably Below 25mN/m.Thus, the release property during film relief pattern of rubber mold being needed on base material becomes good, can prevent Transfer is bad.Rubber mold can for example be set to 50～1000mm of length, 50～3000mm of width, 1～50mm of thickness.Also, also may be used Optionally implement the demoulding to the relief pattern face of rubber mold to process.
Film forming step ＞ of ＜ the 1st
In the manufacture method of the gas barrier component of the 1st embodiment, first, such as shown in Fig. 5 (a), in above-mentioned with recessed The 1st film 60 is formed on the relief pattern of the mould 140 of convex pattern as the 1st gas-barrier layer (the step of Fig. 4 S1).
1st film 60 can be formed by wet process.So-called in this case " wet process ", for example, include：By inorganic material The predecessor of material is coated on mould and is made the method for its hardening, micro-dispersed liquid coated on mould and makes what it was dried Method, by resin material coat on mould and make its harden method, liquid phase depositing method (LPD, Liquid Phase DepoSition) etc..Further, the film formed by the grade wet process can be also made to contain ultraviolet absorption material.
For example, in by the way that the predecessor of inorganic material is coated on mould and making the method for its hardening forming the 1st film During 60 situation, alkoxide of silicon, titanium etc. etc. can be also used as the predecessor (sol-gal process) of inorganic material.Also, also Polysilazane can be used as the predecessor of inorganic material.By heating or irradiating quasi-molecule Isoenergetical line, polysilazane is carried out Aoxidize and carry out ceramic (silica modification), so as to form silica, SiN or SiON.Furthermore, so-called " poly- silicon nitrogen Alkane ", is the polymer with silicon-nitrogen key, the SiO being made up of Si-N, Si-H, N-H etc.2、Si3N4And both centres Solid solution SiOXNYDeng ceramic forerunner inorganic polymer.More preferably in Japanese Unexamined Patent Publication 8-112879 publication it is described as Carrying out ceramic under relative low temperature and modifying as the compound of silica etc. represented by following formulas (1).
Formula (1)：
- Si (R1) (R2)-N (R3)-
In formula, R1, R2, R3 represent respectively hydrogen atom, alkyl, thiazolinyl, cycloalkyl, aryl, alkyl silyl, alkyl amine group or Alkoxyl.
Among compound represented by above-mentioned formula (1), it is further preferred that the Perhydropolysilazane for being hydrogen atom for R1, R2 and R3 (also known as PHPS) or the organopolysilazane with the replacement such as a part of Jing alkyl of hydrogen partial of Si bonds.
As other examples for the polysilazane that ceramic is carried out under low temperature, polysilazane and silane oxidation can be also made Silane oxide addition polysilazane (such as Japanese Unexamined Patent Publication 5-238827 publication) that thing is reacted and obtained, make contracting Glycidol addition polysilazane (such as Japanese Unexamined Patent Publication 6-122852 publication) that water glycerine is reacted and obtained, make Alcohol addition polysilazane (such as Japanese Unexamined Patent Publication 6-240208 publication) that alcohol is reacted and obtained, make metal carboxylate The metal carboxylate addition polysilazane (such as Japanese Unexamined Patent Publication 6-299118 publication) that reacted and obtained, make to include Acetylacetone,2,4-pentanedione misfit thing addition polysilazane (such as Japanese Unexamined Patent Publication that the acetylacetone,2,4-pentanedione misfit thing of metal is reacted and obtained 6-306329 publications), (for example Japan is special for addition metal microparticle and the polysilazane for being added with metal microparticle that obtains Open flat 7-196986 publications) etc..
As the solvent of polysilazane solution, can be using hydrocarbon solvent, halogenations such as aliphatic hydrocarbon, ester ring type hydrocarbon, aromatic hydrocarbons The ethers such as hydrocarbon solvent, fatty ether, ester ring type ether.In order to promote the modification to silicon oxide compounds, can also add amine or metal Catalyst.
For example, the situation below to being formed the 1st film 60 being made up of inorganic material using sol-gal process is illustrated. First, metal alkoxide is prepared as predecessor.For example, when the situation of the 1st film 60 being made up of silica is formed, As the predecessor of silica, can use with tetramethoxy-silicane (TMOS), tetraethoxysilane (TEOS), four-isopropyl oxygen Base silane, four-positive propoxy silane, four-isobutoxy silane, four-n-butoxy silane, four-the second butoxy silanes, The tetraalkoxysilanes such as four-the three butoxy silanes are the four alkane oxide monomer of representative, or with MTMS, Ethyl trimethoxy silane, propyl trimethoxy silicane, isopropyltri-methoxysilane, phenyltrimethoxysila,e, methyl three Ethoxysilane (MTES), ethyl triethoxysilane, propyl-triethoxysilicane, isopro-pyltriethoxysilane, phenyl three Ethoxysilane, methyl tripropoxy silane, ethyl tripropoxy silane, propyl group tripropoxy silane, isopropyl tripropoxy Silane, phenyl tripropoxy silane, the isopropoxy silane of methyl three, the isopropoxy silane of ethyl three, the isopropoxy silicon of propyl group three The trialkoxy silanes such as alkane, the isopropoxy silane of isopropyl three, the isopropoxy silane of phenyl three, tolyl triethoxysilane are The tri-alkoxy monomer of representative, with dimethyldimethoxysil,ne, dimethyldiethoxysilane, dimethyl dipropoxy silicon Alkane, dimethyl diisopropoxy silane, two-n-butoxy silane of dimethyl, dimethyl two-isobutoxy silane, dimethyl Two-the second butoxy silanes, the butoxy silane of dimethyl two-the three, diethyldimethoxysilane, diethyl diethoxy Silane, diethyl dipropoxy silane, diethyl diisopropoxy silane, two-n-butoxy silane of diethyl, diethyl Two-isobutoxy silane, the butoxy silane of diethyl two-the second, the butoxy silane of diethyl two-the three, dipropyl diformazan TMOS, dipropyl diethoxy silane, dipropyl dipropoxy silane, dipropyl diisopropoxy silane, dipropyl Two-n-butoxy silane, diisopropyl two-isobutoxy silane, the butoxy silane of dipropyl two-the second, dipropyl two- 3rd butoxy silane, diisopropyl dimethoxy silane, diisopropyldiethoxysilane, diisopropyl dipropoxy silicon Alkane, diisopropyl diisopropoxy silane, two-n-butoxy silane of diisopropyl, diisopropyl two-isobutoxy silane, The butoxy silane of diisopropyl two-the second, the butoxy silane of diisopropyl two-the three, dimethoxydiphenylsilane, hexichol Base oxethyl silane, diphenyl dipropoxy silane, diphenyl diisopropoxy silane, two-n-butoxy silane of diphenyl, Diphenyl two-isobutoxy silane, the butoxy silane of diphenyl two-the second, butoxy silane of diphenyl two-the three etc. two Alkoxy silane is the dialkanyl oxide monomer of representative.Also can further using the alcoxyl of alkyl three that the carbon number of alkyl is C4～C18 Base silane or dialkyl dialkoxy silicane.Also can be using the tool such as vinyltrimethoxy silane, VTES There are monomer, 2- (3,4- epoxycyclohexyls) ethyl trimethoxy silane, the 3- glycidoxypropyls two of vinyl Methoxy silane, 3- glycidoxypropyltrimewasxysilanes, 3- glycidoxypropyl diethoxy silicon The monomers with epoxy radicals such as alkane, 3- glycidoxypropyl triethoxysilanes, to styryl trimethoxy silane etc. Monomer with styryl, 3- methacryloyloxypropyl methyl dimethoxysilanes, 3- methacryloxies third Base trimethoxy silane, 3- methacryloyloxypropyl methyl diethoxy silanes, 3- methacryloxypropyls three The monomer with methylacryloyl such as Ethoxysilane, 3- acryloxypropyl trimethoxy silanes etc. have acryloyl The monomer of base, N-2- (amido ethyl) -3- aminocarbonyl propyl methyl dimethoxysilanes, N-2- (amido ethyl) -3- Aminocarbonyl propyl trimethoxy silane, 3- aminocarbonyl propyl trimethoxy silanes, 3- aminocarbonyl propyl triethoxysilanes, the second of 3- tri- Epoxide silicon substrate-N- (1,3- dimethyl-butylidene) propyl group amine, N- phenyl -3- aminocarbonyl propyl trimethoxy silanes etc. have There are the monomers with urea groups such as monomer, the 3- ureidopropyltriethoxysilanes of amido, 3- mercaptopropyi methyl dimethoxy epoxides The monomer with sulfydryl such as silane, 3-mercaptopropyi trimethoxy silane, double (triethoxy silicon substrate propyl group) tetrasulfides etc. have There are the monomers with NCO such as monomer, the 3- isocyanates propyl-triethoxysilicanes of sulfenyl, make the monomer such as this small amount of The polymer that is polymerized, importing the gold such as the composite that functional group or polymer are characterized in a part for above-mentioned material Category alkoxide.Also, a part for the alkyl or phenyl of the grade compound or whole also can be fluorine-substituted.Further, can enumerate： Acetyl acetone salt, carboxylate metal ester, oxychlorination things, chloride or this etc. mixture etc., but be not limited to this etc.. As metal kind, other than si, can enumerate：Ti, Sn, Al, Zn, Zr, In etc. or this etc. mixture etc., but be not limited to this Deng.Also the predecessor for suitably mixing above-mentioned oxidized metal can be used to form.Further, as the predecessor of silica, can use The silane idol of the organic functional base in molecule containing there is compatibility, the hydrolyzable group of reactivity with silica and with water-repellancy Mixture.For example can enumerate：The silane list such as n-octytriethoxysilane, MTES, MTMS Body, VTES, vinyltrimethoxy silane, vinyl three (2- methoxy ethoxies) silane, vinyl The vinyl silanes such as methyl dimethoxysilane, 3- methacryloxypropyls, 3- methacryls The methacryl base silane such as epoxide propyl trimethoxy silicane, 2- (3,4- epoxycyclohexyls) ethyl trimethoxy silane, The epoxy radicals silicone hydrides such as 3- glycidoxypropyltrimewasxysilanes, 3- glycidoxypropyl triethoxysilanes, The hydrosulphonyl silanes such as 3-mercaptopropyi trimethoxy silane, 3- Mercaptopropyltriethoxysilanes, 3- Octanoylthio -1- The sulfuric silanes such as propyl-triethoxysilicane, 3- aminocarbonyl propyl triethoxysilanes, 3- aminocarbonyl propyl trimethoxy silanes, N- (2- amido ethyls) -3- aminocarbonyl propyl trimethoxy silanes, N- (2- amido ethyls) -3- aminocarbonyl propyls methyl two The amino containing silanes such as methoxy silane, 3- (N- phenyl) aminocarbonyl propyl trimethoxy silane, the monomer such as this is set to be polymerized Polymer etc..
When using the mixture of TEOS and MTES as the situation of the predecessor of inorganic material, the mixed proportion of the grade is such as 1 can be set in terms of mole ratio：1.The predecessor by be hydrolyzed and polycondensation reaction and generate amorphous silica.As Synthesis condition, in order to adjust the pH of solution, and adds the alkali such as the acid such as hydrochloric acid or ammonium.PH is preferably less than 4 or more than 10.Also, In order to be hydrolyzed, can also add water.The amount of the water for being added can be set to 1.5 relative to metal alkoxide kind in terms of mole ratio More than times.
As the solvent of the precursor solution used in sol-gal process, for example, can enumerate：Methyl alcohol, ethanol, isopropanol (IPA) aliphatic hydrocarbons such as the, alcohols such as butanol, hexane, butane, octane, decane, hexamethylene, benzene,toluene,xylene, equal front three Benzene etc. is aromatic hydrocarbon, the ethers such as diethyl ether, tetrahydrofuran, dioxanes, acetone, methyl ethyl ketone, isophorone, cyclohexanone etc. The ether alcohol classes such as ketone, butoxyethyl ether, hexyloxyethanol, methoxy-2-propanol, BOE, ethylene glycol, propane diols etc. The glycol ethers such as glycols, glycol dimethyl ether, diethylene glycol dimethyl ether, propylene glycol methyl ether acetate, ethyl acetate, lactic acid The phenols such as the esters such as ethyl ester, gamma-butyrolacton, phenol, chlorophenol, DMF, DMA, N- The halogen-based solvents such as the amide-types such as methylpyrrole pyridine ketone, chloroform, dichloromethane, tetrachloroethanes, monochlorobenzene, dichloro-benzenes, curing Carbon etc. contain miscellaneous element compound, water, and this etc. mixed solvent.It is further preferred that be ethanol and isopropanol, also, being also preferably in the grade It is mixed with water.
As the additive of the precursor solution used in sol-gal process, the poly- second two for adjusting viscosity can be used Alkanolamine, the levulinics such as alcohol, PEO, hydroxypropyl cellulose, polyvinyl alcohol or the triethanolamine as solution stabilizer The beta-diketons such as ketone, 'beta '-ketoester, formamide, dimethylformamide, dioxanes etc..Also, as the additive of precursor solution, can The material of acid or alkali is produced using by irradiating the light such as the energy line with ultraviolets such as Excimer uv light as representative.By addition This kind of material, can be made precursor solution carry out gelation (hardening) by irradiation light and form inorganic material.
As shown in Fig. 5 (a), will as mentioned above as the precursor solution of inorganic material for preparing coat the recessed of mould 140 On convex pattern, and form the 1st film (precursor film) 60.As mould 140, can using above-mentioned relief pattern transfer mould, compared with Preferably using with flexibility or flexual membranaceous mould.For example, as shown in Fig. 6 (a), arrange for setting up membranaceous mould 140 back roller 29a with clamp membranaceous mould 140 and with back roller 29a it is relative to mould mouth coating machine 20, in mould mouth coating machine 20 Front end near send into membranaceous mould 140, and spray precursor solution from mould mouth coating machine 20, thus can be in membranaceous mould 140 The 1st film 60 of upper formation.For the viewpoint of production, preferably one side continuously transports membranaceous mould 140, simultaneously using setting Precursor solution is continuously coated with membranaceous mould 140 in the mould mouth coating machine 20 of ad-hoc location.As coating process, can make With the arbitrarily coating process such as bar type rubbing method, spraying process, mould mouth rubbing method, ink-jet method, but can be in the mould of relatively large width Precursor solution and can be fast before the precursor solution being coated with is hardened (be converted into inorganic material) is equably coated with tool For terminating the aspect being coated with fastly, preferably mould mouth rubbing method.
Membranaceous mould 140 with regard to being formed with the 1st film 60, such as shown in Fig. 6 (a), in order to carry out following engagement steps, also may be used Directly transport between pressing roller 22a, 22b.Or, also can be in carrying out making the inorganic material of the film 60 of composition the 1st before engagement step Predecessor be converted into inorganic material, and harden the 1st film 60.(the generation deaerated in hardening is especially included in the 1st film 60 Gas) situation of material when, because it is following the reason for, preferably in carrying out hardening the 1st film 60 before engagement step.In engagement step Before rapid, because the opposition side in the face contacted with mould 140 of the 1st film 60 is showed out into air (or environment of surrounding), therefore And produced gas in the hardening of the 1st film 60 is to around discharging, without producing by caused by bubble in the 1st film 60 Pattern defect.However, in engagement step, because the 1st film 60 clamps (with reference to Fig. 5 (c)) by the 2nd film 70 and mould 140, so There is the gas (bubble) produced by the 1st film 60 can stay between the 2nd film 70 and mould 140, and in being formed on the 1st film 60 Relief pattern in produce the situation of defect by caused by bubble.Furthermore, when the 1st film 60 is hardened, preferably in air In the 1st film 60 is heated at a temperature of room temperature～300 DEG C.Also, in addition because to precursor solution irradiation ultraviolet radiation etc. Light and when producing the situation of the material of acid or alkali, for example can be by irradiating with ultraviolets such as Excimer uv light the 1st film 60 as generation The energy line of table, by predecessor inorganic material is converted into, and hardens the 1st film 60.In making the 1st film 60 so before engagement step During the situation of hardening, in order to carry out engagement step, the membranaceous mould 140 for being formed with the 1st film 60 can be between pressing roller 22a, 22b Directly transport, also batch using roller.It is conveniently in following engagements when the situation of membranaceous mould 140 is batched using roller In step, directly membranaceous mould 140 is rolled out from roller.
Also, the adhesion in order to improve the 1st film 60 and the 2nd film (or following adhesion agent layers), the 1st film that also can be after hardening Surfaction layer is set on 60.As the material of surfaction layer, for example, can enumerate：N-octytriethoxysilane, methyl three The silane monomers such as Ethoxysilane, MTMS, VTES, vinyltrimethoxy silane, The vinyl silanes such as vinyl three (2- methoxy ethoxies) silane, vinyl methyl dimethoxysilane, 3- metering systems The methacryl base silanes such as acryloxypropylethoxysilane triethoxysilane, 3- methacryloxypropyl trimethoxy silanes, 2- (3,4- epoxycyclohexyls) ethyl trimethoxy silane, 3- glycidoxypropyltrimewasxysilanes, 3- shrink The epoxy radicals silicone hydrides such as glycerine epoxide propyl-triethoxysilicane, 3-mercaptopropyi trimethoxy silane, the second of 3- mercaptopropyis three The sulfuric silanes such as the hydrosulphonyl silanes such as TMOS, 3- Octanoylthio -1- propyl-triethoxysilicanes, 3- aminocarbonyl propyls three Ethoxysilane, 3- aminocarbonyl propyl trimethoxy silanes, N- (2- amido ethyls) -3- aminocarbonyl propyl trimethoxy silanes, N- (2- amido ethyls) -3- aminocarbonyl propyl methyl dimethoxysilanes, 3- (N- phenyl) aminocarbonyl propyl trimethoxy silicon The amino containing silanes such as alkane, make polymer that the grade monomer is polymerized etc..In addition to the grade silane system coupling agent, also can use Titanium system coupling agent.Also, also plasma-based can be carried out by surface to the 1st film (otherwise with the face of the face phase side contacted with mould 140) Process, sided corona treatment, quasi-molecule treatment with irradiation, UV/O3Process etc. using energy line process, and arrange surfaction layer.
1st film 60 also can be formed in addition to wet process as above by dry process.For example can be by using steaming Dry process known to physical vapor depositing (PVD) method such as plating, sputter, chemical gaseous phase depositing (CVD) method etc., by inorganic oxide The inorganic material such as thing, inorganic nitride, inorganic nitrogen oxides, inorganic sulphide, inorganic carbide are in the relief pattern of mould 140 Upper film forming, and form the 1st film 60.
For example, in by sputter on the relief pattern of membranaceous mould using metal oxide film forming as the 1st film During situation, the sputtering unit 10 as conceptually represented in Fig. 7 can be used.Sputtering unit 10 possesses vacuum chamber 11.Vacuum chamber No matter the shape of room 11, usually rectangular-shape or cylinder shape etc., as long as the shape that decompression is kept in vacuum chamber 11 can be made State.Rolling out roller 12 and batching membranaceous mould 140 for membranaceous mould 140 is rolled out in being internally provided with for vacuum chamber 11 Takers-in 14, and roll out certainly and be provided between the carrying channel of membranaceous mould 140 that roller 12 rolls out before batching in Jing takers-ins 14 Into deflector roll 16.Further, may also be arranged to transport the deflector roll (not shown) of membranaceous mould 140 in vacuum chamber 11.With with volume Around to the membranaceous mould 140 into deflector roll 16 it is relative to mode be configured with sputter target 18.Sputter target 18 can be metal, also can be gold Category oxide.The width (depth direction of Fig. 7) of sputter target 18 if size be wider than the width of membranaceous mould 140 i.e. Can.
When using sputtering unit as above 10 by the situation of the 1st film film forming, first, will decompression in vacuum chamber 11 For high vacuum.Then one rare gas and the oxygen such as Ar are imported towards in vacuum chamber 11, simultaneously by DC plasma-baseds or high-frequency electrical Slurry hits the metallic atom (and oxygen atom) of sputter target.On the other hand, certainly membranaceous mould 140 is rolled out into roller 12 to roll out, and direction Transport into deflector roll 16.In membranaceous mould 140 along during contacting with its surface into deflector roll 16, on the surface of film die 140 The metallic atom hit from sputter target 18 reacts with oxygen and makes metal oxide depositing.Then, batched using takers-in 14 Depositing has the membranaceous mould 140 of metal oxide.Furthermore, the midway of membranaceous mould 140 also can suitably via deflector roll etc..
Also, in by electron beam heating evaporation on the relief pattern of membranaceous mould using metal oxide film forming as During the situation of the 1st film, for example can in it is identical with above-mentioned sputtering unit 10 possess roll out rolling out roller and batching film for membranaceous mould The takers-in of shape mould, and roll out certainly and be provided between the carrying channel of membranaceous mould that roller rolls out before batching in Jing takers-ins In the vacuum chamber of deflector roll, using following electron beam thermal evaporation device is added：It is with relative with the membranaceous mould for being wound into deflector roll To mode arrange, and possess and add the crucible for having metal or metal oxide and for making to irradiating electron beam in crucible Metal or the electron gun of metal oxide evaporation.When the situation, as long as being made by electron beam when membranaceous mould is transported Metal or metal oxide heating evaporation in crucible, and metal oxide depositing is made in along on the film die transported into deflector roll .When the situation, according to the oxidizability of the 1st film of the oxidizability and target of the material being put into crucible, negotiable oxygen Gas also can not circulate oxygen.
Also, in by atmospheric pressure plasma-based CVD on the relief pattern of membranaceous mould using metal oxide film forming as the 1st During the situation of film, for example can be using described in Japanese Unexamined Patent Publication 2004-52028, Japanese Unexamined Patent Publication 2004-198902 etc. Method.Organo-metallic compound can be used as starting compound, starting compound also can be gas, liquid under normal temperature and pressure Any one state of body, solid.When the situation of gas, can be introduced directly into discharge space, when liquid, the situation of solid, By once heating, bubbling, reduce pressure, ultrasonic irradiation etc. means be vaporized after use.Because of above-mentioned situation, as organic metal Compound, preferably such as boiling point are less than 200 DEG C of metal alkoxide.
As this kind of metal alkoxide, for example, can enumerate：Silane, tetramethoxy-silicane, tetraethoxysilane (TEOS), The silicon compounds such as four-positive propoxy silane；The titanium compounds such as methyl alcohol titanium, titanium ethanolate, isopropyl titanate, titanium tetraisopropylate；Normal propyl alcohol The zirconium compounds such as zirconium；The aluminium compounds such as aluminium ethylate, aluminum isopropylate, aluminium isopropoxide；Ethanol antimony；Three ethanol arsenic；Zinc acetylacetonate； Diethyl zinc etc..
Also, inorganic compound is obtained in order to the grade is decomposed, by decomposition gas and containing the grade organo-metallic compound Unstrpped gas together and use and constitute reactant gas.As the decomposition gas, can enumerate：Hydrogen, methane gas, acetylene gas Body, CO gas, carbon dioxide, nitrogen, ammonia, nitrous oxide gas, nitrogen oxide gas, nitrogen dioxide gas, Oxygen, vapor, fluorine gas, hydrogen fluoride, Trifluridol, benzotrifluoride, hydrogen sulfide, sulfur dioxide, carbon disulfide, chlorine etc..For example Metal oxide can be formed by using oxygen, metal nitride can be formed by using ammonia, can be by using ammonia And nitrous oxide gas and form metal oxynitride.
In plasma-based CVD, to the isoreactivity gas, the main discharge gas that plasma-based state is easily presented of mixing.Make For discharge gas, can be using nitrogen, the 18th race's atom of periodic table, specifically, the rare gas such as helium, neon, argon.Especially For the viewpoint of manufacturing cost, preferably nitrogen.
By above-mentioned discharge gas and reactant gases, be formed as mixed gas and supply to plasma-based electric discharge generation device (plasma generation apparatus), thus carry out film and are formed.The ratio of discharge gas and reactant gas according to the property of the film of target and It is different, relative to whole mixed gas, the ratio of discharge gas is set into more than 50% and supply response gas.
For example, using the silane oxide (tetraalkoxysilane as the metal alkoxide that boiling point is less than 200 DEG C (TEOS)) as starting compound, decomposition gas uses oxygen, and using the non-active gas such as rare gas or nitrogen as Discharge gas, is allowed to plasma-based electric discharge, thus can form silicon oxide film as the 1st film.
This kind of film obtained by CVD is by being selected as the metallic compound of raw material, decomposition gas, decomposing temperature The conditions such as degree, input power, can also be formed separately metal carbides, metal nitride, metal oxide, metal sulfide, gold Category halide, also, the mixture (metal oxynitride, metal oxide halide, nitride metal carbide etc.) of this etc., so compared with It is good.
In order to improve the 1st film and following 2nd films (or adhesion agent layer) that method described above is formed by dry process Adhesion, also can arrange surfaction layer on the 1st film.Surfaction layer can by with formed by wet process The situation identical material and method of surfaction layer is set on 1 film and is formed.
Film forming step ＞ of ＜ the 2nd
Then, as the 2nd film 70 shown in Fig. 5 (b), is formed on base material 40 as the 2nd gas-barrier layer (the step of Fig. 4 S2).Membranaceous base material can be used as base material 40.2nd film 70 can be illustrated by the forming method as the 1st film 60 Any one formation of wet process and dry process.As shown in Fig. 6 (a), in the 1st film 60 being formed by wet process and in not When transporting between pressing roller 22a, 22b in the state of hardening and carrying out the situation of engagement step, the 2nd film 70 passes through wet process And formed and in carrying out being made before engagement step its hardening or formed by dry process.In forming the 1st by wet process Film 60 and when carrying out being made before following engagement steps the situation of its hardening, or in forming the feelings of the 1st film 60 by dry process During shape, the 2nd film 70 forms and carries out in the state of unhardened engagement step by wet process.
The 2nd is formed when the 2nd film 70 is formed by wet process and the situation of its hardening is made and by dry process During the situation of film 70, in order to improve the adhesion with the 1st film 60 (or following adhesion agent layers), also table can be set on the 2nd film 70 Face modifies layer.The material and forming method of surfaction layer can be set to and the situation that surfaction layer can be arranged on the 1st film 60 When the material that uses and method it is identical.Also, when the 2nd film 70 is formed by wet process and the situation of its hardening is made and passing through Dry process and when forming the situation of the 2nd film 70, in order to carry out following engagement steps, be formed with the film-like substrate 40 of the 2nd film 70 Can directly transport between pressing roller 22a, 22b, also batch using roller.When the situation of film-like substrate 40 is batched using roller, It is conveniently in following engagement steps, directly to roll out film-like substrate from roller.
Furthermore, the 1st film forming step can first carry out any one with the 2nd film forming step, also can carry out simultaneously.
＜ engagement steps ＞
Then, as shown in Fig. 5 (c), make base material 40 overlap with mould 140 with the mode that the 2nd film 70 is engaged the 1st film 60 (the step of Fig. 4 S3).For example, as shown in Fig. 6 (a), between a pair of pressing roller 22a, 22b, feeding is formed with the film of the 1st film 60 Shape mould 140 and the film-like substrate 40 for being formed with the 2nd film 70, base material 40 thus can be made overlap with mould 140 and make the 1st film 60 with 2nd film 70 touches.Further, harden the 1st film 60 or the 2nd film 70.For example, as shown in Fig. 6 (a), using the grade of UV lamp 25 to the 1st film 60 or the irradiation ultraviolet radiation Isoenergetical line of the 2nd film 70, or the 1st film 60 or the 2nd film 70 are heated, thus can make the 1st film 60 or 2nd film 70 is hardened.Thus, the 1st film 60 and the 2nd film 70 are fixed in film-like substrate 40 with membranaceous mould in the state of engagement Between 140.
In the rolling process of this kind of use pressing roller 22a, 22b, due to the 1st film 60 and membranaceous base on membranaceous mould 140 The 2nd film 70 on material 40 carries out linear contact lay, so have the advantages that as follows：Activating pressure and stripping can be reduced compared with pressing type Power, easily tackles large area, due to can equably press membranaceous mould 140 throughout the entire surface of film-like substrate 40, so 1st film 60 equably touches with the 2nd film 70, and contiguity can be suppressed bad.
Pressing roller 22a, 22b is preferably surface and has the Ethylene-Propylene-Diene rubber (EPDM) or poly- that there is heat resistance The roller of the envelope of the resin materials such as silicone rubber, nitrile rubber, fluorubber, acrylic rubber, chloroprene rubber.
(strip step)
After the 1st film 60 is engaged with the 2nd film 70, such as shown in Fig. 5 (d), mould 140 is peeled off into (Fig. 4's from the 1st film 60 Step S4).As the stripping means of mould, known stripping means can be adopted.In using there is convex portion and recess to be elongated shape During the situation of shape and the mould with the relief pattern for inclining shallower waveform construction, release property when having mould to peel off is good Advantage.Also, being hardened by making the 1st film 60 or the 2nd film 70 in engagement step, the 1st film 60 is securely engaged with the 2nd film 70, So there is no the part of the 1st film 60 in the situation peeled off from base material 40 is attached in the state of mould 140.In using roll-in During the situation of technique, peeling force is smaller than pressing type, the 1st film 60 will not residue in mould 140 and can easily by mould 140 from 1st film 60 is peeled off.Further, in order to improve the fissility of mould, stripper roll can also be used.As shown in Fig. 6 (a), by stripper roll 23a, 23b are arranged at the downstream of pressing roller 22a, 22b, and by stripper roll 23a, one applies in the face of the film 70 of film-like substrate 40 and the 2nd The membranaceous film 60 of mould 140 and the 1st is supported in power one side rotation, and by stripper roll 23b, one faces the film of membranaceous mould 140 and the 1st The film 70 of film-like substrate 40 and the 2nd is supported in 60 force one side rotations, thus, can be between pressing roller 22a, 22b and stripper roll 23a, 23b Distance in maintain the 1st film 60 to be attached to the state (certain hour) of the 2nd film 70.Then, with the downstream of stripper roll 23a general Membranaceous mould 140 lifts to the mode of the top of stripper roll 23a the route for changing membranaceous mould 140, and with stripper roll 23b The mode of downstream lower section that film-like substrate 40 is reduced to stripper roll 23b change the route of film-like substrate 40, thus, can be by Membranaceous mould 140 is peeled off from the 1st film 60.It is formed with the 1st film 60 peeled off after mould 140 according to being formed at mould 140 The relief pattern 80 of the relief pattern on surface.
Peel off in order to mould 140 will not be made to be attached in the state of mould 140 in a part for the 1st film 60, the 1st film 60 with The contiguity power of mould 140 is preferably below 200N/m, more preferably below 100N/m.The contiguity power of the 1st film 60 and mould 140 can be with Following manner is measured.The material of the 1st film 60 is coated with support substrate and forms film, so that film is concavo-convex with mould The mode of pattern plane contiguity makes support substrate Chong Die with mould.Then, harden film.Thus, support substrate/1st can be obtained The sample of the composition of film/mould.The sample is cut into the short strip shape of 30mm width, using extensiometer (Toyo Seiki system Make, STROGRAPHE-H), the end of mould is lifted with certain speed along the normal direction for supporting substrate, thus by mould from the 1 film is peeled off.The tensile strength of mould now represents the contiguity power of the 1st film and mould.
Can manufacture in the above described manner and the 2nd film 70 and have been sequentially formed on base material 40 as shown in Fig. 1 (a) and Fig. 5 (d) The gas barrier component 100 of 1 film 60.
Also, also coating can be formed in the surface of the 1st film 60 of gas barrier component 100.Coating preferably has shape Thickness in the range of the 25～150% of the standard deviation of the concavo-convex depth of the relief pattern 80 on the films 60 of Cheng Yu 1.Thus, Due to there is foreign matter or defect on relief pattern situation when this etc. can be coated to, so in using the gas barrier component shape Into the light-emitting components such as organic EL element situation when, can effectively suppress the leakage current of light-emitting component.Also, using possessing this kind of tool The gas barrier component that has the coating of the thickness in above range and the light-emitting component that formed has good light extraction efficiency.
Coating can use the material of the material that can be used as the 1st film, be formed by above-mentioned wet process.It is particularly desirable to be Coating is formed using the material identical material with the material as the 1st film.Form coating by using identical material Layer and the 1st film, can suppress the reflection of the light of coating and the 1st intermembranous interface.
Also, also can carry out at hydrophobization to the surface (being the surface of coating when the situation of coating is formed) of the 1st film Reason.As long as the method for silicic acid anhydride is using known method, for example, if silica surface, then using diformazan Base dichlorosilane, trimethylalkyoxys iotalane etc. carry out silicic acid anhydride, can be using using trimethyls such as HMDSs The method that silicon substrate agent carries out silicic acid anhydride with silicone, also can use using the metal oxide of supercritical carbon dioxide The surface treatment method of powder.If the surface of the 1st film is hydrophobicity, in using by manufacturer's legal system of the 1st embodiment The gas barrier component made and when manufacturing the situation of the light-emitting components such as organic EL element, can easily by water in its manufacturing step Divide from gas barrier component and remove, so can prevent from producing the deterioration of defect or device such as dim spot etc in light-emitting component.
Also, also protective layer can be formed in the surface (being the surface of coating when the situation of coating is formed) of the 1st film.Make To form the resin of protective layer, any one of solvent borne and aqueous resin can be used, specifically, be may be used alone or in combination Using two or more polyester based resin, amine ester system resin system, acrylic resin, polyvinyl alcohol resin, ethene-unsaturation carboxylic It is sour copolymer resin, ethylene-ethenol system resin, ethene modification resin, nitrocellulose prime system resin, poly- silica system resin, different Cyanate ester based resin, epoxy system resin, the resin containing oxazoline group, modified styrene series resin, modification poly- silica system resin, titanium Acid alkyl ester etc..Also, in order to improve barrier, abrasivity, sliding, used as protective layer, preferably use will be selected from titanium dioxide The inorganic particulate of more than a kind in Ludox, alumina sol, particle shape inorganic filler and lamellar inorganic filler mixes to above-mentioned Layer in more than a kind of resin or by the polymerizable raw material that above-mentioned resin is made in the presence of the inorganic particulate containing for being formed The layer that the resin of inorganic particulate is constituted.
In addition to above-mentioned coating and protective layer, also various functions layers can be set in the surface of the 1st film.As the functional layer Example, can enumerate：The optical functional layers such as anti-reflecting layer, polarizing layer, colored filter, UV-absorbing layer, or hard conating, stress The electric breathing exercise ergospheres such as the mechanics functional layer such as relaxation layer, antistatic backing, conductive layer, anti-fog layer, stain-proofing layer is printed layer etc..
Furthermore, the method to being manufactured gas barrier component using membranaceous mould in above-mentioned embodiment is said It is bright, but even with the mould of the hard such as metal die, quartz molds, also can identically with above-mentioned manufacture method manufacture gas resistance Every component.When situation using die hard, preferably there is flexual base material as base material using film-like substrate etc..In In above-mentioned embodiment, pressing roller is pressed against the back side of membranaceous mould and the back side of film-like substrate in engagement step, but in Using die hard and film-like substrate situation when, as long as pressing roller to be pressed against the back side of film-like substrate in engagement step (being formed with the face of the opposition side in the face of the 2nd film).Thus, hard can equably be pressed throughout the entire surface of film-like substrate Mould.Also, in above-mentioned embodiment, preferably in strip step, the back side from membranaceous mould and film-like substrate is mutually right Make stripper roll exert a force to ground, and the route of membranaceous mould and film-like substrate is changed in the downstream of stripper roll, thus by membranaceous mould Tool is peeled off from the 1st film, film-like substrate and the 2nd film, when situation using die hard and film-like substrate, from the back of the body of film-like substrate Make stripper roll exert a force facing to die hard, and the route of film-like substrate is changed in the downstream of stripper roll, thus by membranaceous base Material, the 2nd film and the 1st film are peeled off from die hard.Thus, it is possible to less peeling force makes the 1st film not residue in mould and hold Change places and peel off mould 140 from the 1st film 60.
Also, the method to being manufactured gas barrier component using membranaceous base material in above-mentioned embodiment is said It is bright, but even with the base material of the hard such as glass substrate, also can identically with above-mentioned manufacture method manufacture gas barrier component.In Using hard substrate situation when, preferably using membranaceous mould etc. have flexual mould as mould.In above-mentioned enforcement In form, pressing roller is pressed against the back side of membranaceous mould and the back side of film-like substrate in engagement step, but in using hard During the situation of base material and membranaceous mould, as long as the back side that pressing roller is pressed against membranaceous mould (is formed with recessed in engagement step The face of the opposition side in the face of convex pattern).Thus, membranaceous mould can equably be pressed throughout the entire surface of hard substrate. Also, in above-mentioned embodiment, preferably in strip step, from the back side of membranaceous mould and film-like substrate mutually to making to ground Stripper roll exerts a force, and changes the route of membranaceous mould and film-like substrate in the downstream of stripper roll, thus by membranaceous mould from the 1st Film, film-like substrate and the 2nd film are peeled off, when situation using hard substrate and membranaceous mould, from the back side direction of membranaceous mould Hard substrate makes stripper roll exert a force, and changes the route of membranaceous mould in the downstream of stripper roll, thus by membranaceous mould from firmly Matter base material, the 2nd film and the 1st film are peeled off.Thus, it is possible to less peeling force makes the 1st film not residue in mould and easily will Mould 140 is peeled off from the 1st film 60.
On base material with multilayer film component generally by base material sequentially lamination multilayer film and manufacture.In the situation When, the film of first lamination is necessary for that the film of damage will not be produced because of the lamination of follow-up film, also, the film of its back-set bed must pass through Will not such as the method damaged be caused to carry out lamination the film of first lamination.Accordingly, there exist material or lamination method (the film forming side of film Method) it is limited, and required material cannot be used to form the situation of the film with required function.On the other hand, this embodiment The 1st film and the 2nd film are formed respectively on the relief pattern and base material of mould as the manufacture method of gas barrier component is as described above Afterwards, make the 1st film Chong Die with the 2nd film and engaged.Therefore, do not exist makes the 2nd film produce damage because of the lamination of the 1st film, or The 1st film is set to produce the situation damaged because of the lamination of the 2nd film.Therefore, the constituent material or film build method of the 1st film and the 2nd film be simultaneously Unrestrictedly, have the advantages that the 1st film and the 2nd film can be formed using required material or method.
Also, in common nano-imprint method, in mould of the use with relief pattern the structure with relief pattern is manufactured During the situation of part, can make with the following method：The relative transfer materials with mobility are coated on base material by wet process, The relief pattern face pressure of mould is butted on into it and transfer materials are hardened.When the situation, transfer materials are restricted to be coated with And will not deaerate in hardening, so exist that the situation of the film with required function cannot be formed using required material.Phase For this, in the manufacture method of the gas barrier component of this embodiment, as mentioned above as make to be formed at the relief pattern of mould On the 1st film be engaged on base material after, mould is peeled off from the 1st film, be consequently formed the 1st of the relief pattern transferred with mould the Film.That is, by making transfer materials depositing on relief pattern, and the transfer materials of institute's depositing are fitted in into substrate side, and is manufactured Component with relief pattern.Therefore, by dry process etc. coating beyond method and depositing material or in hardening take off The material of gas also can be used as transfer materials.
Thus, the manufacture method of this embodiment is due to the 1st film and the constituent material and the selection model of film build method of the 2nd film Enclose wider, so the feature structure with excellent function such as gas barrier component with excellent barrier properties for gases can be manufactured Part.The gas barrier component manufactured by the manufacture method of this embodiment is adapted to the organic of the higher barrier properties for gases of needs The purposes such as EL element, liquid crystal display cells, solar cell.Also, the gas barrier manufactured by the manufacture method of this embodiment Component also may be suitably used to the packaging of article, for preventing the rotten of food or industrial goods and pharmaceuticals etc. to be packed for On the way.When the gas barrier component for manufacturing the manufacture method by this embodiment situation for packaging applications, can lead to Cross higher gas barrier property and protect packaged product, additionally, also have possessing as shown in Fig. 2 (a), (b) by surface Irregular micro concavo-convex pattern, the advantage of apparent mist degree (haze) or dazzle can be suppressed.Further, in by this enforcement The manufacture method of form and the component that manufactures for membrane-like member situation when, by forming relief pattern in surface, anti-terminating in makes Component overlap each other or be rolled into situation that roll preserved when component occur to attach (being adhered) each other.Therefore, by this enforcement The manufacture method of form and the component that obtains also has the advantages that to be easy to keeping.
Also, in the manufacture method of this embodiment, being formed due to the photolithography for producing a large amount of waste liquids can not be used Relief pattern, so it is less to the load of environment.Further, in the manufacture method of this embodiment, by using rolling process, Also having can at a high speed and continuously produce gas barrier component, the higher advantage of production efficiency.Also, making the 1st film before engagement step Or the 2nd film hardening situation when, be formed with hardening after the 1st film membranaceous mould or be formed with hardening after the 2nd film base material Can batch and be taken care of for roll.Therefore, production adjustment can be easily carried out, and can be efficiently produced with relief pattern Component.
[the 1st deformation form of the manufacture method of gas barrier component]
1st deformation form of the manufacture method of gas barrier component is illustrated.The manufacture method of gas barrier component The 1st deformation form mainly have following steps：The step of the 1st film is formed on the relief pattern of the mould with relief pattern Suddenly；The step of 2 film being formed on base material；Formed on the 1st film being formed on mould or on the 2nd film that is formed on base material The step of adhesion agent layer；The 1st film is engaged with the 2nd film via adhesion agent layer the step of；And the step for peeling off mould from the 1st film Suddenly.In the 1st embodiment, by unhardened 1st film or the hardening of the 2nd film are made in engagement step and by the 1st film and the 2nd film It is fixed in the state of engagement, but in this deformation form, the 1st film is engaged with the 2nd film via adhesion agent layer and is fixed.
(the 1st film forming step)
By with above-mentioned 1st embodiment identical method, on the relief pattern of the mould with relief pattern formed 1st film is used as the 1st gas-barrier layer.In this deformation form, the 1st film can identically with above-mentioned 1st embodiment pass through wet type Technique or dry process and formed, but when the situation of the 1st film is formed by wet process, formed in following adhesion agent layers and walked Harden the 1st film before rapid.
(the 2nd film forming step)
By with above-mentioned 1st embodiment identical method, on base material formed the 2nd film as the 2nd gas-barrier layer.In In this deformation form, the 2nd film can be formed by wet process or dry process identically with above-mentioned 1st embodiment, but in When the situation of the 2nd film is formed by wet process, before following adhesion agent layer forming step harden the 2nd film.
＜ adhesion agent layer forming step ＞
Then, solid is coated with the 1st film being formed on mould or on the 2nd film that is formed on base material, and is formed Adhesion agent layer.For example, as shown in Fig. 6 (b), the base material 40 for being formed with the 2nd film 70 is sent near the front end of mould mouth coating machine 21, And solid is sprayed from mould mouth coating machine 21, adhesion agent layer 30 thus can be formed on the 2nd film 70.With regard to production viewpoint and Speech, preferably one side continuously transport base material 40, are simultaneously connected solid using the mould mouth coating machine 21 for being arranged at ad-hoc location Coat continuously on the 2nd film 70.As the coating process of solid, can using bar type rubbing method, method of spin coating, spraying process, The arbitrarily coating process such as Dipcoat method, mould mouth rubbing method, ink-jet method, so that it may which solid is equably coated relative large area Base material, can in solid hardening before promptly terminate coating aspect for, preferably bar type rubbing method, mould mouth rubbing method and Method of spin coating.
Furthermore, when the situation of solid is coated with the 2nd film, also can carry out after adhesion agent layer forming step above-mentioned 1st film forming step.Also, when the situation of solid is coated with the 1st film, also can carry out after adhesion agent layer forming step Above-mentioned 2nd film forming step.
＜ engagement steps ＞
Then, make base material Chong Die with mould in the way of the 1st film is engaged with the 2nd film via adhesion agent layer.For example, such as Fig. 6 B shown in (), between a pair of pressing roller 22a, 22b, feeding is formed with the membranaceous mould 140 of the 1st film 60 and is formed with the 2nd film 70 and the base material 40 of adhesion agent layer 30, base material 40 thus can be made overlap with mould 140 and the 1st film 60 and the 2nd film 70 is made via connecing Oxidant layer 30 to touch.Further, as mentioned above as make after the 1st film 60 and the contiguity of the 2nd film 70, to harden adhesion agent layer 30.Solid Layer 30 can make its hard irradiation ultraviolet radiation Isoenergetical line of adhesion agent layer 30 etc. as shown in Fig. 6 (b) by using the grade of UV lamp 25 Change.Thus, the 1st film 60 is fixed in base material 40 with membranaceous mould with the 2nd film 70 in the state of engaging via adhesion agent layer 30 Between tool 140.
＜ strip steps ＞
After via adhesion agent layer the 1st film is engaged with the 2nd film, mould is peeled off from the 1st film.Mould can by with it is above-mentioned 1st embodiment identical method is peeled off.
The gas barrier component 100a as shown in Fig. 1 (b) can be manufactured in the above described manner, and it sequentially forms on base material 40 2 films 70 and the 1st film 60, and with being formed with the relief pattern 80 of adhesion agent layer 30 between the 1st film 60 and the 2nd film 70.
[the 2nd deformation form of the manufacture method of gas barrier component]
Also can be after the 1st film forming step of above-mentioned 1st embodiment of enforcement or the 1st deformation form, the 1st on mould Other films different from the 1st film are further formed on film.Other films can form 1 layer, can also form multilayer.In the feelings for forming other films During shape, the 1st film constitutes the 1st gas-barrier layer with other films being formed thereon.Other films can identically with the 1st film pass through dry type Technique and formed, also can be formed by wet process such as rubbing methods.Also stress relaxation layer can be set between each layer.
Also can be after the 2nd film forming step of above-mentioned 1st embodiment of enforcement or the 1st deformation form, the 2nd on base material Other films different from the 2nd film are further formed on film.Other films can form 1 layer, can also form multilayer.In the feelings for forming other films During shape, the 2nd film constitutes the 2nd gas-barrier layer with other films being formed thereon.Other films can identically with the 2nd film pass through dry type Technique and formed, also can be formed by wet process such as rubbing methods.Also stress relaxation layer can be set between each layer.
In the 2nd deformation form, the 1st film is engaged with the 2nd film via above-mentioned other films in engagement step.Yu Ben In case invention, so-called " above-mentioned 1st film is engaged with above-mentioned 2nd film ", not only including the 1st film and the 2nd film directly or via then Oxidant layer and the situation that engaged, also include the situation engaged via other films.
[the 2nd gas barrier component]
Fig. 8 (a) is as indicated, the 2nd enforcement shape of the manufacture method for passing through following gas barrier components with relief pattern State and the gas barrier component 300 with sag and swell (relief pattern) 380 that obtains are on base material 340 via adhesion agent layer 330 and be formed with the 1st film 360 as the 1st gas-barrier layer.As shown in Fig. 8 (b), by following gases with relief pattern 4th deformation form of the manufacture method of obstruction member and the gas barrier component 300a that obtains is on base material 340 and then is formed with 2nd film 370 is used as the 2nd gas-barrier layer.
＜ base material ＞
As base material 340, the substrate identical with the base material 40 that can be used as the 1st gas barrier component 100 can be suitably utilized Substrate.
The film ＞ of ＜ the 1st
Gas barrier component 300 possesses the 1st film 360 as the 1st gas-barrier layer for penetrating for stopping oxygen and vapor. As the material for constituting the 1st film 360, preferably metal oxide, metal nitride, metal oxynitride, metal sulfide, gold The inorganic material such as category carbide, and then preferably silica, aluminum oxide, silicon nitride, silicon oxynitride, aluminum oxynitride, magnesia, oxygen Change inorganic oxide, inorganic nitride or the inorganic nitrogens such as zinc, indium oxide, tin oxide, titanium oxide, cupric oxide, cerium oxide, tantalum oxide Oxide.
Because gas barrier component 300 has sufficient gas barrier property, so the vapor transmission rate of the 1st film 360 Preferably 10- 2g·m- 2·day- 1Below.It is dry using vapour deposition method, sputtering method, CVD etc. as this kind of 1st film 360 is as described below Formula technique and formed.
1st film 360 preferably light peneration.1st film 360 will be preferably for example in will determine wearing when wavelength is set to 550nm Thoroughly rate is more than 80%, and then preferably more than 90%.
The thickness of the 1st film 360 is preferably the scope of 5nm～2 μm.If thickness does not reach 5nm, film defect is more, it is impossible to obtain Obtain sufficiently damp proof effect (gas barrier effect).When situation of the thickness more than 2 μm, due to film formation time it is elongated, so raw Produce deterioration of efficiency.Furthermore, herein, the thickness of so-called 1st film 360 refers to the bottom surface of the 1st film 360 to being formed with following relief patterns The mean value of the distance on 380 surface.
1st film 360 is formed with fine relief pattern (sag and swell) 380 in surface.Fine relief pattern 380 can set It is the identical arbitrary graphic pattern of relief pattern 80 with above-mentioned 1st gas barrier component 100.
Furthermore, the composition that the 1st gas-barrier layer is made up of the individual layer of the 1st film 360, but the 1st gas are represented in Fig. 8 (a) Barrier layer also can be made up of following multilayer film, its by the 1st film 360 be formed at the 1st film 360 lower section (the 1st film 360 with Base material 340 it is relative to side, i.e. between the 1st film 360 and adhesion agent layer 330) more than 1 layer other films constituted.It is formed at Other films of more than 1 layer of the lower section of the 1st film 360 respectively can by with the material illustrated as the material for constituting above-mentioned 1st film 360 Material identical inorganic material is constituted, and also can be made up of the film formed by wet process such as rubbing methods.It is so-called by wet Formula technique and the film that formed, for example, by by polysilazane, Perhydropolysilazane (PHPS), organopolysilazane, silane oxygen Compound addition polysilazane, glycidol addition polysilazane, alcohol addition polysilazane, metal carboxylate addition polysilazane, Acetylacetone,2,4-pentanedione misfit thing addition polysilazane, the polysilazane for being added with metal microparticle are coated as predecessor, and profit Silica, silicon nitride, the silicon oxynitride for being carried out ceramic and being formed with oxidation；By entering metal alkoxide as predecessor Row coating and the SiO for making its hardening and being formed2、TiO2、ZnO、ZnS、ZrO、Al2O3、BaTiO3、SrTiO2, ITO etc.；Coating is micro- Particle dispersion and the SiO for making its drying and being formed2、TiO2、ZnO、ZnS、ZrO、Al2O3、BaTiO3、SrTiO2Deng.Also, with regard to gas For the viewpoint of body barrier, as more than 1 layer of the lower section for being formed at above-mentioned 1st film 360 other films, also can be using available Make the sealing material of organic EL element etc material, such as Chang Lai industries limited company manufacture XNR5516Z, CELVENUSH001 of TB3124, Daicel company manufacture of ThreeBond companies manufacture etc..Further, also can make above-mentioned Material contains ultraviolet absorption material and forms.Ultraviolet absorption material has by absorbing ultraviolet and converting light energy into such as heat Harmless form, and suppress film deterioration effect.As ultra-violet absorber, known person all the time can be used, for example Can be using enumerate BTA system absorbent, triazine system absorbent, salicyclic acid derivatives system absorbent, benzophenone series absorbent etc.. Also, also stress relaxation layer can be arranged between each layer.As stress relaxation layer, can use and above-mentioned 1st gas barrier component Stress relaxation layer identical material.
In the 1st gas-barrier layer for multilayer film situation when, in using gas barrier component as light-emitting component light When learning the situation of substrate, the 1st gas-barrier layer is preferably light peneration.1st gas-barrier layer is preferably for example in will determine ripple Penetrance when length is set to 550nm is more than 80%, and then preferably more than 90%.
When situation of the 1st gas-barrier layer for multilayer film, the thickness of the 1st gas-barrier layer is preferably 5nm～20 μm Scope.If thickness does not reach 5nm, film defect is more, it is impossible to obtain sufficiently damp proof effect (gas barrier effect).It is super in thickness When crossing 20 μm of situation, although in theory damp proof effect is higher, but internal stress is larger and becomes to be easily broken, it is impossible to obtain institute The damp proof effect for needing.Also, when base material 340 is the situation with flexual material, bending or stretching after having because of film forming etc. External factor, and the anxiety of cracking equivalent damage is produced in the 1st gas-barrier layer.Furthermore, herein, so-called 1st gas-barrier layer Thickness, refers to the mean value of the distance of the bottom surface to the surface for being formed with relief pattern 380 of the 1st gas-barrier layer.
When situation of the 1st gas-barrier layer for multilayer film, because gas barrier component 300 has sufficient gas barrier Performance, so the vapor transmission rate of the 1st gas-barrier layer is preferably 10- 2g·m- 2·day- 1Below.When the situation, the 1st The vapor transmission rate of film 360 also can be more than 102g·m- 2·day- 1。
＜ adhesion agent layers ＞
Gas barrier component 300 possesses adhesion agent layer 330 between the film 360 of base material 340 and the 1st.In the 1st gas-barrier layer During the situation being only made up of the 1st film 360, what the film formed only by dry process in the 1st gas-barrier layer was constituted During situation, or in orlop (relative with base material 340 to the layer) film that formed by dry process of the 1st gas-barrier layer During situation, the 1st film 360 is engaged with base material 340 by adhesion agent layer 330.The thickness of adhesion agent layer 330 be preferably 500nm～ 20 μm of scope.Furthermore, it is (relative to it with base material 340 with the lower section of the 1st film 360 from the 1st film 360 in the 1st gas-barrier layer Side) more than 1 layer other films constituted, and the orlop (relative with base material 340 to layer) of the 1st gas-barrier layer is by wet Formula technique and during the situation of the film that formed, as long as can be formed by wet process via the 1st the undermost of gas-barrier layer Film the 1st film 360 is engaged with base material 340, then can also not form adhesion agent layer 330.That is, adhesion agent layer 330 is in by this The manufacture method of the 2nd bright pattern and inscape nonessential in the component that manufactures.
Used as the material of adhesion agent layer 330, can use can with the adhesion agent layer 30 as above-mentioned gas obstruction member 100a The material for using and the material that illustrates is identical.
The film ＞ of ＜ the 2nd
Obtain with regard to the 4th deformation form of the manufacture method by following gas barrier components with relief pattern Shown in gas barrier component 300a, such as Fig. 8 (b), the 2nd film 370 is formed between base material 340 and adhesion agent layer 330 as the 2nd Gas-barrier layer.As the material for constituting the 2nd film 370, the material identical inorganic material that can be used with the 1st film 360 can be used Or organic material (resin material).As described below, the 2nd film 370 can be formed using dry process, also can be by wet process Formed.
When using gas barrier component 300a as the situation of the optical substrate of light-emitting component, the 2nd film 370 is preferably Light peneration.Penetrance of 2nd film 370 preferably for example when measure wavelength is set into 550nm is more than 80%, and then preferably For more than 90%.
The thickness of the 2nd film 370 is preferably the scope of 5nm～20 μm.If thickness does not reach 5nm, film defect is more, it is impossible to obtain Obtain sufficiently damp proof effect (gas barrier effect).When situation of the thickness more than 20 μm, although in theory damp proof effect is higher, But internal stress is larger and become to be easily broken, it is impossible to obtain needed for damp proof effect.Also, in base material 340 be with pliability Material situation when, the external factor such as bending or stretching after having because of film forming, in the 2nd gas-barrier layer 370 produce cracking The anxiety of equivalent damage etc..
Furthermore, the composition that the 2nd gas-barrier layer is made up of the individual layer of the 2nd film 370, but the 2nd gas are represented in Fig. 8 (b) Barrier layer also can be made up of following multilayer film：It is made up of other films of the 2nd film 370 with more than 1 layer.Other of more than 1 layer Film also can be by being constituted with the material identical material illustrated as the material for constituting the 2nd film 370.Also, also can in each layer it Between stress relaxation layer is set.
In the 2nd gas-barrier layer for multilayer film situation when, in using gas barrier component as light-emitting component light When learning the situation of substrate, the 2nd gas-barrier layer is preferably light peneration.2nd gas-barrier layer is preferably for example in will determine ripple Penetrance when length is set to 550nm is more than 80%, and then preferably more than 90%.
When situation of the 2nd gas-barrier layer for multilayer film, the thickness of the 2nd gas-barrier layer is preferably 5nm～20 μm Scope.If thickness does not reach 5nm, film defect is more, it is impossible to obtain sufficiently damp proof effect (gas barrier effect).It is super in thickness When crossing 20 μm of situation, although in theory damp proof effect is higher, but internal stress is larger and becomes to be easily broken, it is impossible to obtain institute The damp proof effect for needing, also, when base material 340 is the situation with flexual material, bending or stretching after having because of film forming etc. External factor, produces the anxiety of cracking equivalent damage in the 2nd gas-barrier layer.
When situation of the 2nd gas-barrier layer for multilayer film, because gas barrier component has sufficient barrier properties for gases Can, so the vapor transmission rate of the 2nd gas-barrier layer is preferably 10- 2g·m- 2·day- 1Below.When the situation, the 2nd film Vapor transmission rate also can be more than 10- 2g·m- 2·day- 1。
[the 2nd embodiment of the manufacture method of gas barrier component]
2nd embodiment of the manufacture method of gas barrier component is illustrated.The manufacture method of gas barrier component Fig. 9 is as indicated, mainly have following steps：On the relief pattern of the mould with relief pattern, the shape by dry process Into T1 the step of 1 film；T3 the step of the 1st film side engagement base material of mould；And by mould from the 1st film peel off the step of T4. Also can have before engagement step T3, be coated with the 1st film being formed on mould or on the face engaged with the 1st film of base material The step of solid T2.Hereinafter, the mould with relief pattern and its manufacture method are illustrated first, to above steps T1～T4, sequentially illustrates while with reference to Figure 10 (a)～(d).
＜ has the mould ＞ of relief pattern
The mould used in manufacture method as the gas barrier component of the 2nd embodiment, can use and the above-mentioned 1st Mould identical mould used in the manufacture method of the gas barrier component of embodiment.
Film forming step ＞ of ＜ the 1st
In the manufacture method of the gas barrier component of the 2nd embodiment, first, such as shown in Figure 10 (a), have in above-mentioned The relief pattern face of the mould 140 of relief pattern forms the 1st film 360 as the 1st gas-barrier layer (the step of Fig. 9 T1).Pass through Using dry process known to physical vapor depositing (PVD) method such as evaporation, sputter, chemical gaseous phase depositing (CVD) method etc., by metal The inorganic material such as oxide, metal nitride, metal oxynitride, metal sulfide, metal carbides are concavo-convex in mould 140 Pattern plane film forming, thus can form the 1st film 360.The vapor transmission rate of this kind of the 1st film 360 formed by dry process It is relatively low, with higher gas barrier property.
Sputter, electronics such as illustrated in the 1st embodiment of the manufacture method of gas barrier component can for example be passed through Beam heating evaporation, atmospheric pressure plasma-based CVD etc. and formed the 1st film 360.
The adhesion of the 1st film 360 formed to improve method described above and following adhesion agent layers 330, also can be in the 1st Surfaction layer is set on film 360.Surfaction layer can be by the 1st enforcement shape with the manufacture method of above-mentioned gas obstruction member The situation identical material and method of surfaction layer is set on the 1st film 60 in state and is formed.
＜ solid application steps ＞
Then, as shown in Figure 10 (b), solid is coated on base material 340 and adhesion agent layer 330 (the step of Fig. 9 is formed T2).For example, as shown in Figure 11 (a), base material 340 is sent near the front end of mould mouth coating machine 320, and from mould mouth coating machine 320 Solid is sprayed, adhesion agent layer 330 thus can be formed on base material 340.For the viewpoint of production, preferably one side is continuous Ground conveyance base material 340, simultaneously continuously coats base material using the mould mouth coating machine 320 for being arranged at ad-hoc location by solid On 340.As the coating process of solid, during the 1st deformation form with the manufacture method of above-mentioned gas obstruction member can be used Solid coating process identical coating process.
When the situation of solid is coated with base material 340, also solid can be carried out before above-mentioned 1st film forming step Application step.In being coated with before solid on base material 340, in order to improve the adhesion of base material 340 and adhesion agent layer 330, also may be used Surfaction layer is set on base material 340.Surfaction layer can be identically with the situation being formed on the 1st film 360 by base The surface of material 340 carries out the coating of coupling agent or plasma-based process, sided corona treatment, quasi-molecule treatment with irradiation, UV/O3The profits such as process Process with energy line etc. and formed.Also, with regard to adhesion agent layer 330, can also be formed on the 1st film 360 and replace being formed at base material On 340.
＜ engagement steps ＞
Then, overlap and be pressed against the base material for being formed with adhesion agent layer 330 by making the mould 140 for being formed with the 1st film 360 340, such as shown in Figure 10 (c), the 1st film 360 is engaged (the step of Fig. 9 T3) with base material 340 via adhesion agent layer 330.For example, such as Shown in Figure 11 (a), have between the base material 340 of adhesion agent layer 330 by the formation transported in pressing roller 22 and immediately below it, send Enter the membranaceous mould 140 for being formed with the 1st film 360, the 1st film 360 contiguity Chong Die with base material 340 can be made.That is, in by pressing roller 22 When the 1st film 360 on membranaceous mould 140 is pressed against into base material 340, simultaneously while transporting membranaceous mould 140 and base material 340, one Face makes the 1st film 360 coating (overlap) on membranaceous mould 140 in base material 340 and the surface of adhesion agent layer 330.Now, by inciting somebody to action Pressing roller 22 is pressed against the back side (otherwise with the face of the face phase side for being formed with relief pattern) of membranaceous mould 140, simultaneously makes membranaceous The 1st film 360 on mould 140 is advanced with the adhesion agent layer 330 on base material 340, is simultaneously touched.Furthermore, press in direction It is conveniently certainly in above-mentioned 1st film forming step to batch membranaceous mould 140 when pressure roller 22 sends into membranaceous mould 140 Takers-in 14 (with reference to Fig. 7) directly roll out membranaceous mould 140 and use.Further, as mentioned above as make the 1st film 360 with then After oxidant layer 330 is touched, harden adhesion agent layer 330.Adhesion agent layer 330 can pass through as shown in Figure 11 (a) using UV lamp 25 etc. Hardened to the irradiation ultraviolet radiation Isoenergetical line of adhesion agent layer 330.Thus, the 1st film 360 is engaged via adhesion agent layer 330 It is fixed on base material 340.
In the rolling process of this kind of use pressing roller 22, due to the adhesion agent layer 330 on base material 340 and membranaceous mould The 1st film 360 on 140 carries out linear contact lay, so have the advantages that as follows：Activating pressure and peeling force can be reduced, easily reply Large area, due to can equably press membranaceous mould 140 throughout the entire surface of base material 340, so the 1st film 360 can be via Adhesion agent layer 330 and be equably close contact in base material 340, so as to suppress contiguity it is bad.
As pressing roller 22, the pressing in the 1st embodiment with the manufacture method of above-mentioned gas obstruction member can be used Roller 22a, 22b identical roller.Also, in order to resist the pressure applied using pressing roller 22, can be with relative with pressing roller 22 to simultaneously The mode of clamping substrate 340 arranges support roller, or can also arrange the support table for supporting substrate 340.
＜ strip steps ＞
In by the 1st film 360 with engage on base material 340 after, shown in such as Figure 10 (d), mould 140 is peeled off from the 1st film 360 (the step of Fig. 9 T4).As the stripping means of mould, known stripping means can be adopted.It is with convex portion and recess in using During the situation of elongated shape and the mould with the relief pattern for inclining shallower waveform construction, demoulding when having mould to peel off The good advantage of property.Also, because the adhesion agent layer 330 after hardening is securely engaged base material 340 with the 1st film 360, so do not deposit In the situation that a part for the 1st film 360 is peeled off in the state of mould 140 is attached to from base material 340.In using rolling process During situation, peeling force is smaller than pressing type, and the 1st film 360 will not residue in mould 140 and can be easily by mould 140 from the 1st film 360 peel off.Further, in order to improve the fissility of mould, stripper roll can also be used.As shown in Figure 11 (a), stripper roll 23 is arranged In the downstream of pressing roller 22, by stripper roll 23, one exerts a force in the face of base material 340 and adhesion agent layer 330, and film is supported in simultaneously rotation The film 360 of shape mould 140 and the 1st, maintains the 1st film 360 to be attached to and connects in distance that thus can be between pressing roller 22 and stripper roll 23 The state (certain hour) of oxidant layer 330.Then, by membranaceous mould 140 being lifted to stripping in the downstream of stripper roll 23 Mode from the top of roller 23 changes the route of membranaceous mould 140, and membranaceous mould 140 is peeled off from the 1st film 360.In stripping The relief pattern 380 according to the relief pattern on the surface for being formed at mould 140 is formed with the 1st film 360 after mould 140.
Can manufacture in the above described manner and the 1st film 360 is formed on base material 340 as shown in Fig. 8 (a), and in base material 340 and the The gas barrier component 300 of adhesion agent layer 330 is formed between 1 film 360.
Also, can be identically with the 1st embodiment of the manufacture method of above-mentioned gas obstruction member in gas barrier component 300 The surface of the 1st film 360 form coating, also can (be coating when the situation of coating is formed to the surface of the 1st film 360 Surface) carry out silicic acid anhydride, or form protective layer, or various functions layers are set.Also metal die, quartz molds can be used Mould Deng hard replaces membranaceous mould.
In the manufacture method of the gas barrier component of this embodiment, by making to be formed at the concavo-convex of mould as mentioned above After 1st film of pattern plane is engaged on base material, mould is peeled off from the 1st film, can be formed and be formed and had by dry process According to the 1st film of the relief pattern of the relief pattern of mould.Generally, in forming concavo-convex on the film formed by dry process Photolithography is used during the situation of pattern, but in the manufacture method of this embodiment, due to using a large amount of waste liquids is produced Photolithography and form relief pattern, so less to the load of environment.Further, in the manufacture method of this embodiment, By using rolling process, the component with relief pattern can at a high speed and be continuously produced, also there is that production efficiency is higher. Also, when there is the situation of component of relief pattern using the Making mold with relief pattern, generally can make with the following method： The relative transfer materials with mobility are coated on base material by wet process, and the relief pattern face pressure of mould is butted on Method thereon；Or the relative transfer materials with mobility are coated with the relief pattern of mould and make to turn in relief pattern After print infiltration, the method for other components is needed on.When the situation, the work(of the film with relief pattern for being formed Due to being limited by the grade transfer printing process, therefore can there is the situation that cannot obtain the film with required function.In contrast, In the manufacture method of this embodiment, inorganic material depositing is made on relief pattern, and be needed on using dry process Other components, thus can manufacture the component with required function.
The gas barrier component manufactured by the manufacture method of this embodiment is formed due to possessing by dry process The 1st film as the 1st gas-barrier layer, so with excellent gas barrier property.Therefore, by the manufacture of this embodiment Method and the gas barrier component that manufactures are identically with the gas barrier component manufactured by the manufacture method of the 1st embodiment Organic EL element, liquid crystal display cells, solar cell, packaging applicationss etc. are may be suitably used to, and then, also have and be easy to the excellent of keeping Point.
[the 3rd deformation form of the manufacture method of gas barrier component]
Also can be after the 1st film forming step of the manufacture method of above-mentioned 2nd embodiment of enforcement, the 1st film on mould Other films that are upper and then forming more than 1 layer.More than 1 layer other films respectively can by with the 1st film identical dry process and shape Into also being formed by wet process such as rubbing methods.In this deformation form, the 1st film and more than 1 layer for being formed thereon Other films constitute the 1st gas-barrier layer.Further, the film that the grade is formed by wet process can be also made to contain ultraviolet radiation absorption material Material.
Also alkoxides such as silicon, titanium etc. can be used as the predecessor (sol-gal process) of above-mentioned inorganic material.Also, also may be used Using polysilazane as inorganic material predecessor.
In engagement step (T3) in the 3rd deformation form, the 1st film is with base material via above-mentioned more than 1 layer other films Engaged.It is to expect not only to include the reason for be expressed as " in the 1st film side engagement base material of mould " in this case invention The situation that 1st film directly or via adhesion agent layer is engaged with base material, also includes being carried out via other more than 1 layer other films The situation of engagement.
[the 4th deformation form of the manufacture method of gas barrier component]
The manufacture method of the gas barrier component of this deformation form is each except the manufacture method with above-mentioned 2nd embodiment Beyond step, also with the step of the 2nd film of formation is as 2 gas-barrier layer on base material.2nd film forming step is in solid The front enforcement of application step.Furthermore, adhesion agent layer is formed on the 1st film being formed on mould in solid application step During situation, as long as the 2nd film forming step is before engagement step, also can be after solid application step.2nd film can lead to Cross above-mentioned dry process or wet process and formed.
When the situation of the 2nd film is formed, follow-up solid application step, engagement step, strip step also can with it is above-mentioned The manufacture method of the 2nd embodiment is carried out in the same manner.For example, as shown in Figure 11 (b), using mould mouth coating machine 320 by solid Coat on the 2nd film 370 being formed on base material 340 and form adhesion agent layer 330 (solid application step), then, in pressing Pressure roller 22 and it is formed with immediately below it between the 2nd film 370 and the base material 340 of adhesion agent layer 330 of conveyance, feeding is formed with The membranaceous mould 140 of the 1st film 360, thus makes the 1st film 360 touch with the 2nd film 370 via adhesion agent layer 330, and by docking Irradiation ultraviolet radiation of oxidant layer 330 etc. makes its hardening and engages the 1st film 360, is fixed on the 2nd film 370 (engagement step), after And, by lifting on mould 140 to the top of stripper roll 23, the 1st film 360 is peeled off (strip step) from mould 140.Thus, As shown in Fig. 8 (b), following gas barrier component 300a can be manufactured, it sequentially forms the 2nd film 370 and the 1st film on base material 340 360, and with being formed with the relief pattern 380 of adhesion agent layer 330 between the 1st film 360 and the 2nd film 370.
In order to improve the adhesion between the 2nd film 370 and adhesion agent layer 330, also surfaction can be set on the 2nd film 370 Layer.Surfaction layer can be used and formed with the situation identical material and method that are formed on the 1st film 370.
Furthermore, more than 1 layer other films also can be further formed on the 2nd film.More than 1 layer be formed on the 2nd film its He can be formed respectively film by dry process, also can be formed by wet process.When the situation, the 2nd film be formed at Other films of more than 1 layer thereon constitute the 2nd gas-barrier layer.
[light-emitting component]
Secondly, to using being obtained by the manufacture method of above-mentioned embodiment and deformation form with relief pattern The embodiment of the light-emitting component of gas barrier component manufacture is illustrated.As shown in Figure 12 (a), (b) and Figure 13 (a), (b), Light-emitting component 200,200a, 400,400a sequentially possess the 1st electrode layer on gas barrier component 100,100a, 300,300a 92nd, the electrode layer 98 of organic layer 94 and the 2nd.Furthermore, gas barrier component 100 is made up of base material 40, the 2nd film 70 and the 1st film 60, Gas barrier component 100a is made up of base material 40, the 2nd film 70, the film 60 of adhesion agent layer 30 and the 1st, gas barrier component 300 by Base material 340, the film 360 of adhesion agent layer 330 and the 1st are constituted, and gas barrier component 300a is by base material 340, the 2nd film 370, solid The 330 and the 1st film 360 of layer is constituted.Light-emitting component 200,200a, 400,400a also can further possess containment member 101 with sealing Adhesion agent layer 103.
The electrode ＞ of ＜ the 1st
1st electrode 92 can be set to have in order that the light from the organic layer 94 being formed thereon is penetrated to the side of base material 40 The transparency electrode of penetrability.Also, it is so that the relief pattern for being formed at the surface of the 1st film 60 is maintained at that the 1st electrode 92 is more satisfactory The mode lamination on the surface of the 1st electrode 92.
As the material of the 1st electrode, for example, can use indium oxide, zinc oxide, tin oxide and the complex as this etc. Indium tin oxide (ITO), gold, platinum, silver, copper.Among the grade, for viewpoint of the transparency with electric conductivity, preferably ITO.1st The thickness of electrode 92 is preferably the scope of 20～500nm.
＜ organic layer ＞
Organic layer 94 is formed on the 1st electrode 92.As long as organic layer 94 is to can be used as the organic layer of organic EL element, then simultaneously It is not particularly limited, can suitably utilizes known organic layer.
The surface (interface of the electrode 98 of organic layer 94 and the 2nd) of organic layer 94 also can as Figure 12 (a), (b) and Figure 13 (a), B shown in (), maintenance is formed at the relief pattern on the surface of the 1st film 60,360.Or, the surface of organic layer 94 can not also maintain shape The relief pattern on the surface of the films 60,360 of Cheng Yu 1, its surface is flatter.Maintain to be formed at the 1st film in the surface of organic layer 94 60th, during the situation of the relief pattern on 360 surface, plasma-based by caused by the 2nd electrode 98 absorbs and reduces, the extraction efficiency of light Improve.Herein, as the material of electric hole transport layer, can enumerate：Peacock blue derivative, naphthols cyanines derivative, derivatives of porphyrin, N, Double (3- aminomethyl phenyls)-(1,1'- the biphenyl) -4,4'- diamines (TPD) of N'- or double [N- (the naphthyl)-N- benzene of 4,4'- Base-amido] aromatic diamine compound, oxazole, oxadiazoles, triazole, imidazoles, imidazolone, the Stilbene such as biphenyl (α-NPD) derive Thing, pyrazoline derivative, imidazolidine, polyaryl alkane, butadiene, 4,4', 4 "-three (N- (3- aminomethyl phenyls)-N- Phenyl amido) triphenylamine (m-MTDATA), but it is not limited to this etc..Also, luminescent layer from the 1st electrode 92 in order that inject Electric hole with from the injected electrons of the 2nd electrode 98 carry out in conjunction with and light and arrange.As the material that luminescent layer can be used, can Use：Anthracene, naphthalene, pyrene, thick four benzene, Kou, perylene, Tai perylene, Nai perylenes, diphenyl diethylene, tetraphenylbutadiene, cumarin, oxadiazoles, Organic metal misfit thing, the three (distiches such as double benzoxazoles quinolines, talan, cyclopentadiene, hydroxyquinoline aluminum misfit thing (Alq3) Triphen -4- bases) amine, 1- aryl -2,5- two (2- thienyls) azole derivatives, pyrans, quinacridone, lycid alkene, two Styryl benzene derivative, diphenylethyllene arene derivatives, talan yl amine derivatives and various fluorchromes etc..Also, Also preferably the suitably mixing of the luminescent material in the grade compound is used.Also, also can suitably using show from The luminous material of spin multiplicity, for example produce the luminous phosphorescent light-emitting materials of phosphorescence and an intramolecular part have by The compound at the position that the grade is constituted.Furthermore, above-mentioned phosphorescent light-emitting materials are preferably comprising heavy metals such as iridium.Also can will be above-mentioned Luminescent material is doped in the higher material of main part of carrier mobility as guest materials, and utilizes dipole-dipole interaction (Forster mechanisms), electron exchange interact (Dexter mechanisms) and are allowed to luminous.Also, as the material of electron transfer layer, Can enumerate：Nitro replaces heterocycle tetracarboxylic anhydride, the carbon such as Fluorene derivatives, diphenylquinone derivatives, thiopyrandioxide derivatives, Nai perylenes Imidodicarbonic diamide, Asia Fluorene methylmethane derivatives, anthraquinone bismethane and anthracyclinone derivatives, oxadiazole derivatives, hydroxyquinoline aluminum misfit Organic metal misfit thing such as thing (Alq3) etc..Further, in above-mentioned oxadiazole derivatives, the oxygen atom of oxadiazoles ring is substituted by The thiadiazoles derivative of sulphur atom, the quinoxaline derivative with quinoxaline ring known as electron withdrawing group are also Can be used as electron transport material.Further, can also use and the grade material is directed into macromolecular chain or using the material such as this as height The macromolecular material of the main chain of molecule.Furthermore, electric hole transport layer or electron transfer layer can also have the effect of luminescent layer concurrently.
Further, for making the electron injection from the 2nd electrode 98 become easy viewpoint, also can be in organic layer 94 and the 2nd Arrange between electrode 98 by lithium fluoride (LiF), Li2O3It is higher Deng metal fluoride or metal oxide, Ca, Ba, Cs isoreactivity The layer that alkaline-earth metal, organic insulation etc. are constituted is used as electron injecting layer.Also, just making to be noted from the electric hole of the 1st electrode 92 Enter to become for easy viewpoint, also can arrange between the electrode 92 of organic layer 94 and the 1st and be derived by triazole derivative, oxadiazoles Thing, imdazole derivatives, polyaryl alkane derivatives, pyrazoline derivative and e derivatives, phenylenediamine derivative, arylamine Derivative, amido chalcones derivative, oxazole derivatives, styrylanthracene derivatives, Fluorene ketone derivatives, hydazone derivative, The institute such as stilbene derivative, silazane derivatives, aniline based copolymer or electroconductive polymer oligomer, especially thiophene oligomers The layer of composition is used as electric hole implanted layer.
Also, in the situation that organic layer 94 is the laminate being made up of electric hole transport layer, luminescent layer and electron transfer layer When, the thickness of preferably electric hole transport layer, luminescent layer and electron transfer layer is respectively the scope of 1～200nm, 5～100nm The scope of scope and 5～200nm.
The electrode ＞ of ＜ the 2nd
2nd electrode 98 is formed on organic layer 94.As the 2nd electrode 98, the less material of work function can be suitably used, and It is not particularly limited, for example, can be set to the metal electrodes such as aluminium, MgAg, MgIn, AlLi.Also, the thickness of the 2nd electrode 98 be preferably 50～ The scope of 500nm.Also, the 2nd electrode 98 also can be accumulated in the way of maintaining to be formed at the relief pattern on the surface of the 1st film 60 Layer.Also, as the mirror-reflection countermeasure of the 2nd electrode 98 formed using metal, also Polarizer can be arranged on the 2nd electrode 98.
＜ containment member ＞
Containment member 101 and base material 40,340 pairs to and arranges, and space (sealing sky is formed between base material 40,340 Between) 105.1st electrode 92, the electrode 98 of organic layer 94 and the 2nd are located in the sealing space 105.Containment member 101 can use close Seal adhesion agent layer 103 and be fixed on base material 40,340.Sealing adhesion agent layer 103 is in Figure 12 (a), (b) and Figure 13 (a), (b) Z-direction (normal direction of base material 40,340), between base material 40,340 and containment member 101, and in XY directions (base material 40th, direction in 340 face) to surround organic layer 94 in the way of holding position.By containment member 101 and sealing adhesion agent layer 103, prevent moisture or oxygen from penetrating into sealing space 105.Thus, suppress the deterioration of the grade of organic layer 94, improve light-emitting component 200th, 200a, 400, the life-span of 400a.Also, in order to efficiently extract the light from the transmitting of organic layer 94, preferably sealing solid Layer 103 is not contacted with organic layer 94, and sealing adhesion agent layer 103 separates specific interval and formed away from organic layer 94.Above-mentioned spy Such as preferably more than 1 μm of fixed interval.
As long as the material of containment member 101 is the higher material of barrier properties for gases, for example can be using packaging material etc. Used in known gas barrier film, for example by silica or the oxidation plastic foil of aluminium-vapour deposition, ceramic layer and punching Hit the laminate for relaxing polymeric layer, metal forming, glass system or metal hermetically sealed can, etching that polymer film is laminated Glass etc..
As the material of sealing adhesion agent layer 103, can and unrestrictedly use to glass, also, plastic base etc. generally makes Any solid, can be using any materials of the above-mentioned material that can be used as adhesion agent layer 30.
Sealing space 105 also can be full of by non-active gas etc..As non-active gas, except N2In addition, can it is preferable that With rare gas such as He, Ar, the rare gas of He and Ar, the shared ratio in gas of non-active gas are also preferably mixed with Preferably 90～100 volumes %.Also, sealing space 105 can the non-live such as filled solid shape or liquid resin, glass, fluorine system Property the oil or filler such as gel rubber material.The grade filler is more satisfactory for transparent or gonorrhoea.Further, can match somebody with somebody in sealing space 105 Absorptive material is put, for example, can use barium monoxide etc. as absorptive material.Specifically, for example can be by using having The fluororesin system of adhesive agent partly penetrates film (MICROTEX S-NTF8031Q, day east electrician manufacture) etc. by Aldrich system The high-purity mangesium oxide barium dust made is attached at containment member 101, and is configured in sealing space 105.In addition, also can be preferable The absorptive substance that ground is sold using Japan GORE-TEX limited companies, double leaf electronics limited company etc..
Further, in light-emitting component 200,200a, 400,400a, also can in the formation of base material 40,340 have the 1st film 60, Otherwise (becoming the face in the extraction face of the light of light-emitting component) arranges optical functional layer in the face of the face phase side of the side of 360 grades.As light Functional layer is learned, as long as to may be used to extract the light of light-emitting component, there is no particular restriction, can use the folding with controllable light Penetrate or optically focused, diffusion (scattering), diffraction, reflection etc. and by any optical component of the construction in the outside of light extraction to element.Make For this kind of optical functional layer, for example also can use the convex lens of packaged lens etc, concavees lens, Fresnel lens, prismatic lens, Cylinder lenses, lenticular lens, by can be by the manufacture method phase with the above-mentioned gas barrier component with sag and swell layer With method and the various lens components such as lenticule that the buckle layer that formed is constituted, mediate on the transparent body expansion that has diffusion materials Discrete piece, diffusion layer, surface have the diffusion sheet of sag and swell (relief pattern), diffuser plate, diffraction grating, with anti-reflection function Component etc..Among the grade, so that it may which higher efficiency ground is extracted for the aspect of light, preferably lens component.Also, as this kind of Mirror component, can use multiple lens components, when the situation, can also arrange fine lens component and form so-called lenticule (array).Optical functional layer can also use commercially available product.By arranging this kind of optical functional layer, can suppress by base material 40,340 Light be totally reflected with the interface of air in base material 40,340 (include optical functional layer) and improved light extraction efficiency.
The light-emitting component 200,200a of this embodiment, 400,400a due to using with excellent barrier properties for gases gas Body obstruction member 100,100a, 300,300a, so prevent the deterioration by caused by moisture or oxygen and be the long-life.Also, by The relief pattern played a role as diffraction grating is formed with the 1st film 60,360, so light-emitting component 200,200a, 400, 400a has the excellent characteristics of luminescence.
More than, described the present invention by embodiment and deformation form, but by the manufacturer of the present invention Method and the component with sag and swell that manufactures is not limited to above-mentioned embodiment and deformation form, can be in claim Suitably it is changed in the range of interior described technological thought.For example, the having for manufacturing by the manufacture method of the present invention The component of sag and swell is not limited to the gas barrier component used in optical element.That is, by the manufacturer of the present invention Method, can be manufactured on base material and be formed with the 1st functional layer (the 1st film) with specific function and the 2nd functional layer (the 2nd film) is various Functional component is formed with the various functions of the layer (the 1st film) with specific function on base material by dry process Component.As functional layer, can illustrate：It is reflection layer, light scattering layer, insulating barrier, electrode pattern layer, conductive layer, anti-fog layer, heat-insulated Layer, stain-proofing layer, light waveguide-layer, dielectric layer, areflexia layer, low reflection layer, polarizing function layer, x-ray diffraction layer, hydrophilic layer, drying layer Deng.
[industrial applicability]
The manufacture method of the component with relief pattern of the 1st pattern of the present invention is due to the material to the 1st film and the 2nd film And film build method less-restrictive, so the functional component with excellent function can be manufactured.Also, the 2nd pattern of the present invention The manufacture method of the component with relief pattern can easily manufacture formed by dry process and possess surface be formed with it is recessed The component of the film of convex pattern.The manufacture method of the present invention such as this produces the photolithography of a large amount of waste liquids due to not using, and passes through The relief pattern transfer of mould is formed into the component with relief pattern, so less to the load of environment, production efficiency is also It is higher.Especially in the manufacture method of the component with relief pattern of the 1st pattern, the higher film of gas barrier property is formed As the 1st film and the 2nd film, or in the manufacture method of the component with relief pattern of the 2nd pattern, the shape by dry process Into the higher film of gas barrier property, gas barrier component thus can be manufactured.Organic EL using this kind of gas barrier component is first Part suppresses the deterioration by caused by the gas such as moisture or oxygen and is the long-life, and with higher luminous efficiency.By this Bright manufacture method and the gas barrier component that obtains may be suitably used to liquid in addition to it may be suitably used to organic EL element, also The light such as optical substrate or lenticule array, nanoprism array, the fiber waveguide of the various devices such as crystal display element, solar cell Learn optical element, LED, solar cell, anti-reflective film, semiconductor chip, the patterned media (patterned such as element, lens Media), the manufacture of data storage, Electronic Paper, LSI etc., the packaging of article, for preventing food or industrial goods and medicine Purposes in biological fields such as the rotten packaging element of product etc., Immunoassay Chip and cell culture piece etc..Also, of the invention The manufacture method of the component with relief pattern also can be used for the component with various functions beyond gas barrier component Manufacture.

Claims (17)

1. a kind of manufacture method of the component with relief pattern, it has following steps：There is the mould of relief pattern in surface The step of 1 film being formed on the above-mentioned relief pattern of tool；
The step of 2 film being formed on base material；
By making above-mentioned mould Chong Die with above-mentioned base material, the step of above-mentioned 1st film is engaged with above-mentioned 2nd film；And
Above-mentioned mould is peeled off from above-mentioned 1st film engaged with above-mentioned 2nd film the step of.
2. there is as claimed in claim 1 the manufacture method of the component of relief pattern, it has following steps：In the above-mentioned engagement of enforcement Before step, on above-mentioned 2nd film on above-mentioned 1st film or above-mentioned base material on above-mentioned mould solid is coated with.
3. as claim 1 or 2 the component with relief pattern manufacture method, itself so have in above-mentioned engagement step it Before, the step of form other films on above-mentioned 2nd film on above-mentioned 1st film and/or above-mentioned base material on above-mentioned mould.
4. a kind of manufacture method of the component with relief pattern, it has following steps：
Have in surface on the above-mentioned relief pattern of mould of relief pattern, the step of form 1 film by dry process；
The step of the above-mentioned 1st film side engagement base material of above-mentioned mould；And
By above-mentioned mould from above-mentioned 1st film peel off the step of.
5. there is as claimed in claim 4 the manufacture method of the component of relief pattern, it has following steps：In the above-mentioned engagement of enforcement Before step, be engaged on the face of the above-mentioned base material of the above-mentioned 1st film side of above-mentioned mould or above-mentioned mould the 1st film side coating connect Agent.
6. as claim 4 or 5 the component with relief pattern manufacture method, itself so have following steps：In above-mentioned On above-mentioned 1st film formed on the above-mentioned relief pattern of mould, other are formed by dry process and/or wet process Film.
7. as any one of claim 4 to 6 the component with relief pattern manufacture method, wherein, in above-mentioned 1st film shape Into in step, by using above-mentioned dry process by silica, silicon oxynitride or silicon nitride film forming, and above-mentioned 1st film is formed.
8. as any one of claim 4 to 7 the component with relief pattern manufacture method, it has following step：In Before implementing above-mentioned engagement step, the 2nd film is formed on above-mentioned base material.
9. such as claims 1 to 3, the manufacture method of any one of 8 component with relief pattern, wherein, above-mentioned 1st film And/or the vapor transmission rate of above-mentioned 2nd film is 10- 2g·m- 2·day- 1Below.
10. there is as claimed in claim 3 the manufacture method of the component of relief pattern, wherein, by above-mentioned 1st film and above-mentioned 1st film On the 1st gas-barrier layer that constituted of above-mentioned other films and/or the 2nd gas-barrier layer being made up of above-mentioned 2nd film water Steam penetrance is 10- 2g·m- 2·day- 1Below.
The manufacture method of 11. such as components with relief pattern of any one of claim 1 to 10, wherein, above-mentioned mould The convex portion of above-mentioned relief pattern and recess
There is respectively bending and the elongated shape for extending when i) overlooking, and
Ii) bearing of trend, flexure direction and length heterogeneity.
The manufacture method of 12. such as components with relief pattern of any one of claim 1 to 11, wherein, above-mentioned mould Above-mentioned relief pattern is irregular relief pattern, and concavo-convex average headway is the scope of 100～1500nm, concavo-convex depth point The mean value of cloth is the scope of 20～200nm.
The manufacture method of 13. such as components with relief pattern of any one of claim 1 to 12, wherein, above-mentioned mould The Fourier transform picture of convex and concave analysis image is shown with the absolute value of wave number as 0 μm- 1Origin as approximate centre round shape Or the grain pattern of annular shape, and the grain pattern of above-mentioned round shape or annular shape is present in the absolute value of wave number and becomes 10 μm- 1Following area Domain.
A kind of 14. components with relief pattern, it passes through the component with relief pattern of any one of claim 1 to 13 Manufacture method and manufacture.
15. as claim 14 the component with relief pattern, it has gas-barrier layer,
Above-mentioned 1st film is contained in above-mentioned gas barrier layer.
16. as claim 15 the component with relief pattern, wherein, the vapor transmission rate of above-mentioned gas barrier layer is 10- 2g·m- 2·day- 1Below.
A kind of 17. organic EL elements, it is in the system of the component with relief pattern by any one of claim 1 to 13 On the component with relief pattern made method and manufacture, sequentially the electrode of lamination the 1st, organic layer and metal electrode and formed.
CN201580042029.9A 2014-08-04 2015-08-03 Method for manufacturing member having irregular pattern Pending CN106660260A (en)

Applications Claiming Priority (5)

Application Number Priority Date Filing Date Title
JP2014-158406 2014-08-04
JP2014158406 2014-08-04
JP2014184202 2014-09-10
JP2014-184202 2014-09-10
PCT/JP2015/071923 WO2016021533A1 (en) 2014-08-04 2015-08-03 Method for manufacturing member having irregular pattern

Publications (1)

Publication Number Publication Date
CN106660260A true CN106660260A (en) 2017-05-10

Family

ID=55263799

Family Applications (1)

Application Number Title Priority Date Filing Date
CN201580042029.9A Pending CN106660260A (en) 2014-08-04 2015-08-03 Method for manufacturing member having irregular pattern

Country Status (9)

Country Link
US (1) US20170133638A1 (en)
EP (1) EP3178632A1 (en)
JP (1) JPWO2016021533A1 (en)
KR (1) KR20170038824A (en)
CN (1) CN106660260A (en)
AU (1) AU2015300184A1 (en)
CA (1) CA2956592A1 (en)
TW (1) TW201622205A (en)
WO (1) WO2016021533A1 (en)

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN109494306A (en) * 2017-09-11 2019-03-19 上海和辉光电有限公司 A kind of device packaging method and flexible device
CN110651201A (en) * 2017-05-31 2020-01-03 Jxtg能源株式会社 Antifogging member
CN110923754A (en) * 2019-12-04 2020-03-27 瑞声通讯科技(常州)有限公司 Manufacturing method of Fresnel mold easy to demold
CN112917789A (en) * 2021-01-27 2021-06-08 业成科技（成都）有限公司 Hot press molding process and hot press device thereof

Families Citing this family (22)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR101732789B1 (en) * 2014-04-04 2017-05-08 주식회사 엘지화학 Liquid Crystal Element
KR101805552B1 (en) 2015-08-31 2017-12-08 엘지디스플레이 주식회사 Organic Light Emitting Diode Display Device
DE102016106846A1 (en) * 2016-04-13 2017-10-19 Osram Oled Gmbh Multilayer encapsulation, encapsulation process and optoelectronic device
JP6872864B2 (en) * 2016-07-14 2021-05-19 日鉄ケミカル＆マテリアル株式会社 Metal substrate for organic EL element
KR102451095B1 (en) 2016-07-22 2022-10-06 쓰리엠 이노베이티브 프로퍼티즈 캄파니 Structured Films and Articles Thereof
JP6700473B2 (en) * 2016-07-27 2020-05-27 コーニンクレッカ フィリップス エヌ ヴェＫｏｎｉｎｋｌｉｊｋｅ Ｐｈｉｌｉｐｓ Ｎ．Ｖ． Method for producing a polyorganosiloxane stamp
KR102547143B1 (en) 2016-09-27 2023-06-23 일루미나, 인코포레이티드 imprinted substrate
JP6880681B2 (en) * 2016-12-01 2021-06-02 凸版印刷株式会社 An organic EL element, and a lighting device, a planar light source, and a display device including the organic EL element.
CN108802878B (en) * 2017-04-27 2021-02-26 清华大学 Pine tree shaped metal nano grating
FI127799B (en) * 2017-06-02 2019-02-28 Dispelix Oy Method of manufacturing a diffractive grating
KR101974558B1 (en) * 2017-09-26 2019-09-05 울산과학기술원 Thin Film for Package and manufacturing method thereof
US10921499B1 (en) 2018-06-12 2021-02-16 Facebook Technologies, Llc Display devices and methods for processing light
US11145631B1 (en) 2018-06-12 2021-10-12 Facebook Technologies, Llc Display devices and methods of making the same
US20190386246A1 (en) * 2018-06-14 2019-12-19 Int Tech (Hk) Co., Limited Display device and method for manufacturing the same
US11262584B2 (en) 2018-10-25 2022-03-01 Facebook Technologies, Llc Color foveated display devices and methods of making the same
KR101940282B1 (en) * 2018-10-30 2019-01-18 방승용 Manufacturing Method of Core Pipe for Rolling Film
JP2022008024A (en) * 2020-03-31 2022-01-13 大日本印刷株式会社 Matte article and method for manufacturing same
WO2021201105A1 (en) * 2020-03-31 2021-10-07 大日本印刷株式会社 Matte article and method for producing matte article
CN111864083A (en) * 2020-07-24 2020-10-30 武汉理工大学 Packaging method of perovskite solar cell
KR102453880B1 (en) * 2020-11-18 2022-10-14 고려대학교 산학협력단 Stretchable barrier film
TWI751867B (en) * 2020-12-29 2022-01-01 李學能 Semiconductor device
JP7578036B2 (en) 2021-03-25 2024-11-06 大日本印刷株式会社 Transfer sheet and method for producing decorative material using same

Citations (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5375263A (en) * 1976-12-15 1978-07-04 Matsushita Electric Works Ltd Polyvinyl chloride decorative laminated sheet production process
JPH03108140A (en) * 1989-09-21 1991-05-08 Canon Inc Method and apparatus for continuous production of substrate for optical recording medium
JPH0985824A (en) * 1995-09-22 1997-03-31 Toppan Printing Co Ltd Embossed sheet, laminate using the same and production thereof
CN1196947C (en) * 2001-12-17 2005-04-13 精工爱普生株式会社 Colour filter, liquid crystal apparatus and mfg. method thereof, and electronic apparatus
CN1956829A (en) * 2004-03-25 2007-05-02 三洋电机株式会社 Production method of curved-surface mold and production method of optical element using this metal mold
CN101461043A (en) * 2006-06-23 2009-06-17 东京毅力科创株式会社 Semiconductor device and method for manufacturing the same
WO2009099235A1 (en) * 2008-02-08 2009-08-13 Tokyo University Of Science Educational Foundation Administrative Organization Process for producing structure with metal film, mother die for use in the process, and structure produced by the process
CN101632192A (en) * 2007-03-14 2010-01-20 松下电器产业株式会社 The manufacture method of membrane-membrane reinforcing member assembly, film-catalyst layer assembly, membrane-electrode assembly, polymer electrolyte fuel cells and membrane-electrode assembly
CN102782868A (en) * 2010-03-05 2012-11-14 吉坤日矿日石能源株式会社 Transparent conductive substrate for solar cell, method for manufacturing the substrate, and solar cell using the substrate
WO2013161454A1 (en) * 2012-04-26 2013-10-31 Ｊｘ日鉱日石エネルギー株式会社 Method for producing mold for transferring fine pattern, method for producing substrate having uneven structure using same, and method for producing organic el element having said substrate having uneven structure
WO2014054678A1 (en) * 2012-10-05 2014-04-10 Ｊｘ日鉱日石エネルギー株式会社 Manufacturing method for optical substrate using film shaped mold, manufacturing device, and optical substrate obtained thereby

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2006236748A (en) 2005-02-24 2006-09-07 Konica Minolta Holdings Inc Organic electroluminescent device
JP5542072B2 (en) 2011-01-31 2014-07-09 富士フイルム株式会社 Gas barrier film and organic device using the same
JP2013253319A (en) 2012-05-09 2013-12-19 Mitsubishi Plastics Inc Gas barrier film and method for producing the same
KR101451547B1 (en) * 2012-06-13 2014-10-15 아사히 가세이 이-매터리얼즈 가부시키가이샤 Functional transfer body, method for transferring functional layer, packaged article and functional transfer film roll

Patent Citations (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5375263A (en) * 1976-12-15 1978-07-04 Matsushita Electric Works Ltd Polyvinyl chloride decorative laminated sheet production process
JPH03108140A (en) * 1989-09-21 1991-05-08 Canon Inc Method and apparatus for continuous production of substrate for optical recording medium
JPH0985824A (en) * 1995-09-22 1997-03-31 Toppan Printing Co Ltd Embossed sheet, laminate using the same and production thereof
CN1196947C (en) * 2001-12-17 2005-04-13 精工爱普生株式会社 Colour filter, liquid crystal apparatus and mfg. method thereof, and electronic apparatus
CN1956829A (en) * 2004-03-25 2007-05-02 三洋电机株式会社 Production method of curved-surface mold and production method of optical element using this metal mold
CN101461043A (en) * 2006-06-23 2009-06-17 东京毅力科创株式会社 Semiconductor device and method for manufacturing the same
CN101632192A (en) * 2007-03-14 2010-01-20 松下电器产业株式会社 The manufacture method of membrane-membrane reinforcing member assembly, film-catalyst layer assembly, membrane-electrode assembly, polymer electrolyte fuel cells and membrane-electrode assembly
WO2009099235A1 (en) * 2008-02-08 2009-08-13 Tokyo University Of Science Educational Foundation Administrative Organization Process for producing structure with metal film, mother die for use in the process, and structure produced by the process
CN102782868A (en) * 2010-03-05 2012-11-14 吉坤日矿日石能源株式会社 Transparent conductive substrate for solar cell, method for manufacturing the substrate, and solar cell using the substrate
WO2013161454A1 (en) * 2012-04-26 2013-10-31 Ｊｘ日鉱日石エネルギー株式会社 Method for producing mold for transferring fine pattern, method for producing substrate having uneven structure using same, and method for producing organic el element having said substrate having uneven structure
WO2014054678A1 (en) * 2012-10-05 2014-04-10 Ｊｘ日鉱日石エネルギー株式会社 Manufacturing method for optical substrate using film shaped mold, manufacturing device, and optical substrate obtained thereby
CA2886852A1 (en) * 2012-10-05 2014-04-10 Jx Nippon Oil & Energy Corporation Manufacturing method for optical substrate using film shaped mold, manufacturing device, and optical substrate obtained thereby

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN110651201A (en) * 2017-05-31 2020-01-03 Jxtg能源株式会社 Antifogging member
CN110651201B (en) * 2017-05-31 2021-11-26 Jxtg能源株式会社 Antifogging member
CN109494306A (en) * 2017-09-11 2019-03-19 上海和辉光电有限公司 A kind of device packaging method and flexible device
CN110923754A (en) * 2019-12-04 2020-03-27 瑞声通讯科技(常州)有限公司 Manufacturing method of Fresnel mold easy to demold
CN112917789A (en) * 2021-01-27 2021-06-08 业成科技（成都）有限公司 Hot press molding process and hot press device thereof

Also Published As

Publication number Publication date
CA2956592A1 (en) 2016-02-11
WO2016021533A1 (en) 2016-02-11
JPWO2016021533A1 (en) 2017-05-18
EP3178632A1 (en) 2017-06-14
TW201622205A (en) 2016-06-16
KR20170038824A (en) 2017-04-07
US20170133638A1 (en) 2017-05-11
AU2015300184A1 (en) 2017-03-02

Similar Documents

Publication Publication Date Title
CN106660260A (en) Method for manufacturing member having irregular pattern
TWI701854B (en) Film member with uneven structure, manufacturing method thereof, and organic EL element
JP6342895B2 (en) Manufacturing method of substrate having concavo-convex structure
CN104380843B (en) Organic electroluminescent device and manufacture method thereof
CN104703779B (en) Manufacturing method for optical substrate using film shaped mold, manufacturing device, and optical substrate obtained thereby
JP6101784B2 (en) Manufacturing method of member having concavo-convex structure and member having concavo-convex structure manufactured thereby
CN104685970A (en) Device for inspecting substrate having irregular rough surface and inspection method using same
WO2014175069A1 (en) Substrate having rugged structure obtained from hydrophobic sol/gel material
KR101894342B1 (en) Light-emitting element
WO2016190056A1 (en) Light-emitting element
EP3139705A1 (en) Light emitter
JP2016065981A (en) Method of manufacturing member with concavo-convex pattern

Legal Events

Date Code Title Description
PB01 Publication
PB01 Publication
SE01 Entry into force of request for substantive examination
SE01 Entry into force of request for substantive examination
WD01 Invention patent application deemed withdrawn after publication

Application publication date: 20170510

WD01 Invention patent application deemed withdrawn after publication