CN106654070A - OLED device and fabrication method thereof - Google Patents
OLED device and fabrication method thereof Download PDFInfo
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- CN106654070A CN106654070A CN201710081898.3A CN201710081898A CN106654070A CN 106654070 A CN106654070 A CN 106654070A CN 201710081898 A CN201710081898 A CN 201710081898A CN 106654070 A CN106654070 A CN 106654070A
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
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- H—ELECTRICITY
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- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K50/00—Organic light-emitting devices
- H10K50/10—OLEDs or polymer light-emitting diodes [PLED]
- H10K50/11—OLEDs or polymer light-emitting diodes [PLED] characterised by the electroluminescent [EL] layers
- H10K50/125—OLEDs or polymer light-emitting diodes [PLED] characterised by the electroluminescent [EL] layers specially adapted for multicolour light emission, e.g. for emitting white light
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K50/00—Organic light-emitting devices
- H10K50/10—OLEDs or polymer light-emitting diodes [PLED]
- H10K50/14—Carrier transporting layers
- H10K50/15—Hole transporting layers
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K50/00—Organic light-emitting devices
- H10K50/10—OLEDs or polymer light-emitting diodes [PLED]
- H10K50/17—Carrier injection layers
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Abstract
The invention provides an OLED device and a fabrication method thereof. The manufacturing method comprises the following steps of providing a substrate, and forming a first electrode layer on the substrate; forming a first organic layer on the first electrode layer, and performing graphic processing on the first organic layer so as to form a first organic island-like pattern, a second organic island-like pattern and a third organic island-like pattern, wherein an interval exists between the adjacent organic island-like patterns, and the first electrode layer is exposed at the interval; forming a red light emitting layer on the first organic island-like pattern, forming a blue light emitting layer on the second organic island-like pattern, and forming a green light emitting layer on the third organic island-like pattern; and forming a second organic layer and a second electrode layer in sequence on the light emitting layers. According to the OLED device and the fabrication method thereof, complete independent control of each sub-pixel can be realized; cross interference, from blue light sub-pixels to red and green light sub-pixels, of holes is blocked; color bias under a low current is improved; and the display effect of the OLED device is enhanced.
Description
Technical field
The present invention relates to display technology field, more particularly to a kind of OLED and preparation method thereof.
Background technology
With the development of OLED (Organic Light-Emitting Diode, organic light emitting display) technology, user couple
The display of OLED colors and gray scale requires more and more higher.
During the full-color AMOLED for being made by RGB side-by-side at present, first with Common Mask (CM)
HIL (hole injection) layers and HTL (hole transport) layer are formed, EML (luminous) layer is re-formed, ETL (electric transmission) is eventually formed
Layer, EIL (electron injection) layers and transparent cathode.For the device of HIL and htl layer being prepared with CM when high gray shows, each son
The driving current of pixel is higher, and resistance is less, and Resistance Maximum is harassed in hole between sub-pixel, therefore it is negligible not to harass electric current
Meter.
However, when low GTG shows, the driving current of each sub-pixel is extremely low, with electric current the equivalent of diode is reduced
Resistance is increased dramatically, i.e., when low GTG shows, RR、RGAnd RBNumerical value greatly, resistance is harassed about in same magnitude with hole.
Affected by material behavior in addition, blue photons pixel drive voltage is higher than red green sub-pixel, so RBMore than RRAnd RG.Due to EML layers
Shared HIL layers and htl layer, then RBRAnd RBGCan be to RBFormed hole under shunting action, i.e. blue light sub-pixel can channelling to red
Green sub-pixel, causes OLED to show and there is colour cast.
Therefore, prior art existing defects, need to improve.
The content of the invention
It is an object of the invention to provide a kind of improved OLED and preparation method thereof.
To solve the above problems, the technical scheme that the present invention is provided is as follows：
The present invention provides a kind of preparation method of OLED, comprises the following steps：
One substrate is provided, first electrode layer is formed on the substrate；
The first organic layer is formed in the first electrode layer, process is patterned to first organic layer, so as to
Form first organic island-shaped pattern, second organic island-shaped pattern and the 3rd organic island-shaped pattern, adjacent organic island-shaped pattern
There is interval each other, interval exposes first electrode layer；
Red light luminescent layer is formed in described first organic island-shaped pattern, forms blue in described second organic island-shaped pattern
Light luminescent layer, and form green light emitting layer in the 3rd organic island-shaped pattern；
The second organic layer and the second electrode lay are sequentially formed on luminescent layer.
It is first organic island-shaped pattern, described second organic in the preparation method of OLED of the present invention
Island-shaped pattern and the 3rd organic island-shaped pattern are arranged at equal intervals each other, and spacing distance is 1 μm～15 μm.
In the preparation method of OLED of the present invention, process is patterned to first organic layer, so as to
The step of forming first organic island-shaped pattern, second organic island-shaped pattern and three organic island-shaped patterns includes：
Photoresistance is coated with first organic layer；
To be coated with photoresistance after the first organic layer be exposed, develop, etch, so as to formed first organic island-shaped pattern,
Second organic island-shaped pattern and the 3rd organic island-shaped pattern.
In the preparation method of OLED of the present invention, first organic layer includes hole injection layer and hole
Transport layer；The step of the first organic layer is formed in first electrode layer includes：
Hole injection layer is formed in the first electrode layer；
Hole transmission layer is formed on the hole injection layer.
In the preparation method of OLED of the present invention, second organic layer includes electron injecting layer and electronics
Transport layer；The step of sequentially forming the second organic layer and the second electrode lay in the first electrode layer and the luminescent layer is wrapped
Include：
Electric transmission is formed in the first electrode layer and the luminescent layer and enters layer；
Electron injecting layer is formed on the electron transport layer；
The second electrode lay is formed on the electron injecting layer.
In the preparation method of OLED of the present invention, in described first organic island-shaped pattern red light-emitting is formed
Layer, in described second organic island-shaped pattern blue light-emitting is formed, and green glow is formed in the 3rd organic island-shaped pattern and is sent out
The step of photosphere, includes：
Red light luminescent layer is formed in described first organic island-shaped pattern using high-precision metal mask plate, described second
Blue light-emitting is formed in organic island-shaped pattern, in the 3rd organic island-shaped pattern green light emitting layer is formed.
In the preparation method of OLED of the present invention, the step of form the first organic layer in first electrode layer
Including：
First organic layer is formed in first electrode layer using vacuum evaporation process.
In the preparation method of OLED of the present invention, on luminescent layer described in the substrate second is sequentially formed
The step of organic layer and the second electrode lay, includes:
Using vacuum evaporation process sequentially form in the first electrode layer and the luminescent layer the second organic layer and
The second electrode lay.
In the preparation method of OLED of the present invention, the first electrode layer is ITO or IZO.
The present invention provides a kind of OLED, including：
Substrate；
First electrode layer, it is arranged on the substrate；
Hole injection layer, it is arranged in the first electrode layer, including the first hole injection island-shaped pattern, the second hole
Injection island-shaped pattern and the 3rd hole injection island-shaped pattern；
Hole transmission layer, it includes the first hole transport island figure being arranged in the first hole injection island-shaped pattern
Case, the second hole transport island-shaped pattern being arranged in second hole injection island-shaped pattern and it is arranged on the described 3rd
The 3rd hole transport island-shaped pattern in hole injection island-shaped pattern；
Luminescent layer, it include the red light luminescent layer being arranged in the first hole transport island-shaped pattern, be arranged on it is described
Blue light-emitting in second hole transport island-shaped pattern and the green glow being arranged in the 3rd hole transport island-shaped pattern
Luminescent layer；
Electron transfer layer, it is arranged on luminescent layer；
Electron injecting layer, it is arranged on the electron transport layer；
The second electrode lay, it is arranged on electron injecting layer
Compared to existing OLED and preparation method thereof, the present invention provides a substrate, first is formed on substrate electric
Pole layer；The first organic layer is formed in first electrode layer, process is patterned to the first organic layer, it is organic so as to form first
, there is interval between adjacent organic island-shaped pattern in island-shaped pattern, second organic island-shaped pattern and the 3rd organic island-shaped pattern,
Interval exposes first electrode layer；Red light luminescent layer is formed in first organic island-shaped pattern, in second organic island-shaped pattern
Blue light-emitting is formed, and green light emitting layer is formed in the 3rd organic island-shaped pattern；Second is sequentially formed on luminescent layer
Organic layer and the second electrode lay.The present invention can realize each sub-pixel completely independent control, and blocking hole is by blue photons picture
Plain harassing to red green sub-pixel, improves the colour cast under low current, improves the display effect of OLED.
Description of the drawings
Fig. 1 is the schematic flow sheet of the preferred embodiment of the OLED preparation method of the present invention.
Fig. 2 is OLED manufacture craft schematic diagram in the preferred embodiment of the present invention.
Fig. 3 is the structural representation of OLED in the preferred embodiment of the present invention.
Specific embodiment
The explanation of following embodiment is the particular implementation implemented to illustrate the present invention may be used to reference to additional schema
Example.The direction term that the present invention is previously mentioned, for example " on ", D score, "front", "rear", "left", "right", " interior ", " outward ", " side "
Deng being only the direction with reference to annexed drawings.Therefore, the direction term for using is to illustrate and understand the present invention, and is not used to
Limit the present invention.
In figure, the similar module of structure is represented with identical label.
Fig. 1 is refer to, Fig. 1 is the schematic flow sheet of the preparation method of the OLED of the present invention.The system of the OLED
Make method including below scheme：
S101 a, there is provided substrate, forms first electrode layer on substrate.
S102, forms the first organic layer in the first electrode layer, and to first organic layer process is patterned,
So as to form first organic island-shaped pattern, second organic island-shaped pattern and the 3rd organic island-shaped pattern, adjacent organic island
There is interval between pattern, interval exposes first electrode.
S103, in described first organic island-shaped pattern red light luminescent layer is formed, in described second organic island-shaped pattern
Blue light-emitting is formed, and green light emitting layer is formed in the 3rd organic island-shaped pattern.
S104, sequentially forms the second organic layer and the second electrode lay on luminescent layer.
The step of below with reference to Fig. 2 to the preparation method of above TFT substrate, is described in detail.
Fig. 2 is refer to, Fig. 2 illustrates for the first organic layer manufacture craft of the OLED of a preferred embodiment of the present invention
Figure.Understand step of the present invention with reference to Fig. 2 is shown from top to bottom.
In step S101, pretreatment is cleaned to substrate 100 first, substrate 100 can be transparent rigid substrate
Or flexible base board, such as, the substrate 100 can be glass, quartz etc..Then formed on the substrate 100 using sputtering method
First electrode layer 11.The first electrode layer 11 can be prepared by the material such as ITO (tin indium oxide) or IZO (indium zinc oxide), using as
The anode of OLED.In order to improve the electric conductivity of first electrode layer 11, in specific implementation process, can also be in the first electrode layer
Deposited metal Cr is improving the electric conductivity of first electrode layer on 11.
In step s 102, the first organic layer can formed in the first electrode layer 11 using vacuum evaporation process
12, it can be prepared by TPD, NPB, TTB, HTM2 etc..With reference to Fig. 2, first organic layer 12 may include the He of hole injection layer 121
Hole transmission layer 122.The step of the first organic layer 12 are then formed in the first electrode layer 11 includes：
Hole injection layer 121 is formed in the first electrode layer 11；
Hole transmission layer 122 is formed on the hole injection layer 121.
In the present embodiment, process is being patterned to first organic layer 12, so as to form first organic island figure
The step of case a, second organic island-shaped pattern b and three organic island-shaped patterns c, includes：
Photoresistance is coated with first organic layer 12；
First organic layer 12 for being coated with photoresistance is exposed, is developed, is etched, so as to form first organic island
Pattern a, second organic island-shaped pattern b and the 3rd organic island-shaped pattern c.
In certain embodiments, described first organic island-shaped pattern a, second organic island-shaped pattern b and described
Three organic island-shaped patterns c can be arranged at equal intervals each other.In order to ensure the light-emitting area of pixel, spacing distance can be set to 1 μm
～15 μm.
In the present embodiment, the first organic layer implanted layer 121 and hole transmission layer 122 are spaced to be formed three it is isolated little
Island, the hole injection layer and hole transmission layer of the device for thus preparing its pixel of RGB tri- are each independent, and low current drives
Under harassed to the hole of red green sub-pixel from blue light sub-pixel and be blocked, realize each son as completely independent control.
In step 103, it is to improve luminous efficiency, it is organic described first using high-precision metal mask plate (FMM)
Luminescent layer 13 is deposited with layer 12.As shown in Fig. 2 the luminescent layer 13 is red in described first organic island-shaped pattern a including being arranged on
Light luminescent layer x, the blue light-emitting y being arranged in described second organic island-shaped pattern b, and it is arranged on the 3rd organic island
Green light emitting layer z on shape pattern c.
Can be directly to prepare material alone as luminescent layer 13 using Alq3 when being embodied as.Also has plenty of this
Body can not be separately as luminescent layer, and being entrained in another kind of host material to light, such as red dopant DCJTB, and green glow is mixed
Miscellaneous dose of DMQA, blue light dopant BH1, BD1 etc..
At step 104, the second organic layer 14 and can be sequentially formed on luminescent layer 13 using vacuum evaporation process
Two electrode layers 15.In the present embodiment, as shown in Fig. 2 second organic layer 14 may include electron transfer layer 141 and electronics note
Enter layer 142.The second organic layer 14 and second electrode are then sequentially formed in the first electrode layer 11 and the luminescent layer 13
The step of layer 15, can include：
Electric transmission is formed in the first electrode layer 11 and the luminescent layer 13 and enters layer 141；
Formed in 141 layers of the electric transmission；
The second electrode lay 15 is formed on the electron injecting layer 142.
Wherein, the necessary masking stability of the material of making electron transfer layer 141 is high, thermally-stabilised and electron-transporting is good, can
Using fluorescent dye compound, such as Alq, Znq, Gaq, Bebq, Balq, DPVBi, ZnSPB, PBD, OXD, BBOT.Electronics is noted
Entering layer 142 can be prepared from by materials such as Liq, PEIE.
In the present embodiment, the second electrode lay 15 is constituted with first electrode layer 11 and drives electricity as the negative electrode of OLED
Pole, is lighted for driving electronics and hole to collide in luminescent layer 13.Wherein, the second electrode lay 15 can be single-layer metal
Negative electrode, can be prepared from by materials such as Mg, Al, Ca, Ag, Li, In etc..Additionally, in order to improve luminance, can obtain stable again
Device can also be alloy cathode (such as Mg：) or layered cathode Al (such as LiF/Al).
In certain embodiments, can be to increase electronic barrier layer between hole transmission layer 122 and luminescent layer 13, can be by
It is prepared by the materials such as Perylene, Rubrene, DCIT.Similarly, can be with the increasing between electron transfer layer 141 and luminescent layer 13
Plus hole blocking layer, reacted with electronics with intercepting hole and being directly entered electron transfer layer.
The OLED preparation method of this preferred embodiment, by forming first electrode layer on the substrate for providing；
The first organic layer is formed on one electrode layer, process is patterned to the first organic layer, so as to formed first organic island-shaped pattern,
, there is interval, interval dew between adjacent organic island-shaped pattern in second organic island-shaped pattern and the 3rd organic island-shaped pattern
Go out first electrode；Red light luminescent layer is formed in first organic island-shaped pattern, blue light is formed in second organic island-shaped pattern and is sent out
Photosphere, and form green light emitting layer in the 3rd organic island-shaped pattern；Sequentially form on luminescent layer the second organic layer and
The second electrode lay.The present invention can realize each sub-pixel completely independent control, and blocking hole is from blue light sub-pixel to red green son
Harassing for pixel, improves the colour cast under low current, improves the display effect of OLED.
Fig. 3 is refer to, the OLED includes substrate 200, first electrode layer 21, hole injection layer 22, hole transmission layer
23rd, luminescent layer 24, electron transfer layer 25, electron injecting layer 26 and the second electrode lay 27.
Wherein, first electrode layer 21 is arranged on the substrate 200, and it can be as the anode of OLED, with OLED devices
The negative electrode of part forms driving electrodes, is lighted for driving hole and electronics to collide in luminescent layer 24.The first electrode
Layer can be ITO or IZO.Substrate 200 can be transparent rigid substrate or flexible base board, such as, the substrate 200 can be glass
Glass, quartz etc..
Hole injection layer 22 is arranged in the first electrode layer 21, can be prepared by materials such as CuPu or MDATA.Such as Fig. 3
Shown, the hole injection layer 22 includes the first hole injection pattern 221, the second hole injection pattern 222 and the 3rd hole note
Enter pattern 223, the first hole injection pattern 221, second hole injection pattern 222 and the 3rd hole injection
The interval setting of pattern 223, each interval exposes first electrode layer.
Hole transmission layer 23, can be prepared by TPD, NPB, TTB, HTM2 etc..As shown in figure 3, hole transmission layer 23 includes setting
Put the first hole transport pattern 231 on first hole injection pattern 221, be arranged on the second hole injection pattern
The second hole transport pattern 232 on 222 and the 3rd hole transport being arranged on the 3rd hole injection pattern 223
Pattern 233.
Luminescent layer 24, with reference to Fig. 3, it includes being arranged on the first hole transport pattern 231 red light luminescent layer
241st, the blue light-emitting 242 that is arranged on the second hole transport pattern 232 and it is arranged on the 3rd hole transport
Green light emitting layer 243 on pattern 233.Alq3 is directly alone as the material of luminescent layer.Also having plenty of itself can not
Separately as luminescent layer, being entrained in another kind of host material to light, such as red dopant DCJTB, green glow dopant
DMQA, blue light dopant BH1, BD1 etc..
Electron transfer layer 25, it is arranged in the first electrode layer 21 and the luminescent layer 24.Make electron transfer layer
25 material must masking stability it is high, thermally-stabilised and electron-transporting is good, can adopt fluorescent dye compound, such as Alq, Znq,
Gaq, Bebq, Balq, DPVBi, ZnSPB, PBD, OXD, BBOT etc..
Electron injecting layer 26, it is arranged on the electron transfer layer 25, can be prepared from by materials such as Liq, PEIE.
The second electrode lay 27, it is arranged on the electron injecting layer 26, can be as the negative electrode of OLED, with OLED devices
The anode of part forms driving electrodes, is lighted for driving electronics and hole to collide in luminescent layer 24.Wherein, second is electric
Pole layer 27 can be single-layer metal negative electrode, can be prepared from by materials such as Mg, Al, Ca, Ag, Li, In etc..Additionally, sending out to improve
Light rate, can obtain stable device again, can also for alloy cathode (such as Mg：) or layered cathode Al (such as LiF/Al).
Hole and electronics are first injected into respectively hole transmission layer 23 and electron transfer layer 25, are then re-introduced into luminescent layer
24, electronics and hole are met and are combined in luminescent layer 24, and due to the transition of energy band visible ray is sent.
Its luminescence mechanism is：Hole reaches the light-emitting zone of the colors of RGB tri- by hole injection layer 22, hole transmission layer 23
(i.e. luminescent layer 24), in the light-emitting zone and electronics of the colors of RGB tri- recombination luminescence is carried out；Electronics passes through electron injecting layer 26, electronics
Transport layer 25 reach the colors of RGB tri- light-emitting zone, the colors of RGB tri- light-emitting zone and hole carry out recombination luminescence.
The present invention can realize each sub-pixel completely independent control, and blocking hole is from blue light sub-pixel to red green sub-pixel
Harass, improve the colour cast under low current, improve the display effect of OLED.
In sum, although the present invention it is disclosed above with preferred embodiment, but above preferred embodiment and be not used to limit
The system present invention, one of ordinary skill in the art without departing from the spirit and scope of the present invention, can make various changes and profit
Adorn, therefore protection scope of the present invention is defined by the scope that claim is defined.
Claims (10)
1. a kind of preparation method of OLED, it is characterised in that comprise the following steps：
One substrate is provided, first electrode layer is formed on the substrate；
The first organic layer is formed in the first electrode layer, process is patterned to first organic layer, so as to be formed
First organic island-shaped pattern, second organic island-shaped pattern and the 3rd organic island-shaped pattern, between adjacent organic island-shaped pattern
There is interval, interval exposes the first electrode layer；
Red light luminescent layer is formed in described first organic island-shaped pattern, blue light is formed in described second organic island-shaped pattern and is sent out
Photosphere, in the 3rd island-shaped pattern green light emitting layer is formed；
The second organic layer and the second electrode lay are sequentially formed on luminescent layer.
2. the preparation method of OLED as claimed in claim 1, it is characterised in that first organic island-shaped pattern, institute
State second organic island-shaped pattern and the 3rd organic island-shaped pattern arranged at equal intervals each other, spacing distance be 1 μm～
15μm。
3. the preparation method of OLED as claimed in claim 1, it is characterised in that figure is carried out to first organic layer
Change is processed, and is wrapped the step of so as to form first organic island-shaped pattern, second organic island-shaped pattern and three organic island-shaped patterns
Include：
Photoresistance is coated with first organic layer；
To be coated with photoresistance after the first organic layer be exposed, develop, etch, so as to formed first organic island-shaped pattern, second
Organic island-shaped pattern and the 3rd organic island-shaped pattern.
4. the preparation method of OLED as claimed in claim 1, it is characterised in that first organic layer includes hole note
Enter layer and hole transmission layer；The step of forming the first organic layer in the first electrode layer includes：
Hole injection layer is formed in the first electrode layer；
Hole transmission layer is formed on the hole injection layer.
5. the preparation method of OLED as claimed in claim 1, it is characterised in that second organic layer includes electronics note
Enter layer and electron transfer layer；The step of the second organic layer and the second electrode lay are sequentially formed on luminescent layer includes：
Electric transmission is formed on luminescent layer and enters layer；
Electron injecting layer is formed on the electron transport layer；
The second electrode lay is formed on the electron injecting layer.
6. the preparation method of OLED as claimed in claim 1, it is characterised in that in described first organic island-shaped pattern
Red light luminescent layer is formed, blue light-emitting is formed in described second organic island-shaped pattern, in the 3rd organic island-shaped pattern
The step of upper formation green light emitting layer, includes：
Red light luminescent layer is formed in described first organic island-shaped pattern using high-precision metal mask plate, it is organic described second
Blue light-emitting is formed in island-shaped pattern, and green light emitting layer is formed in the 3rd organic island-shaped pattern.
7. the preparation method of OLED as claimed in claim 1, it is characterised in that is formed in the first electrode layer
The step of one organic layer, includes：
First organic layer is formed in the first electrode layer using vacuum evaporation process.
8. the preparation method of OLED as claimed in claim 1, it is characterised in that second is sequentially formed on luminescent layer has
The step of machine layer and the second electrode lay, includes:
Using sequentially forming the second organic layer and the second electrode lay on vacuum evaporation process luminescent layer.
9. the preparation method of OLED as claimed in claim 1, it is characterised in that the first electrode layer be ITO or
IZO。
10. a kind of OLED, it is characterised in that include：
Substrate；
First electrode layer, it is arranged on the substrate；
Hole injection layer, it includes the first hole injection island-shaped pattern, the second hole note being arranged in the first electrode layer
Enter island-shaped pattern and the 3rd hole injection island-shaped pattern, there is interval between adjacent organic island-shaped pattern, interval is exposed
First electrode layer；
Hole transmission layer, it include being arranged on the first hole transport island-shaped pattern in the first hole injection island-shaped pattern,
The second hole transport island-shaped pattern for being arranged in second hole injection island-shaped pattern and it is arranged on the 3rd hole
The 3rd hole transport island-shaped pattern in injection island-shaped pattern；
Luminescent layer, it includes the red light-emitting sublayer being arranged in the first hole transport island-shaped pattern, is arranged on described
Blue light emitting sublayer in two hole transport island-shaped patterns and the green glow being arranged in the 3rd hole transport island-shaped pattern
Luminous sublayer；
Electron transfer layer, it is arranged on luminescent layer；
Electron injecting layer, it is arranged on the electron transport layer；
The second electrode lay, it is arranged on electron injecting layer.
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| CN201710081898.3A CN106654070A (en) | 2017-02-15 | 2017-02-15 | OLED device and fabrication method thereof |
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|---|---|---|---|
| CN201710081898.3A CN106654070A (en) | 2017-02-15 | 2017-02-15 | OLED device and fabrication method thereof |
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ID=58844893
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN109979976A (en) * | 2019-03-21 | 2019-07-05 | 昆山国显光电有限公司 | Display panel, display screen and display equipment |
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| US20120205633A1 (en) * | 2011-02-11 | 2012-08-16 | Semiconductor Energy Laboratory Co., Ltd. | Light-Emitting Device and Manufacturing Method Thereof |
| CN102723351A (en) * | 2011-03-29 | 2012-10-10 | 京东方科技集团股份有限公司 | OLED substrate, manufacturing method and display apparatus thereof |
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| Publication number | Priority date | Publication date | Assignee | Title |
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| CN109979976A (en) * | 2019-03-21 | 2019-07-05 | 昆山国显光电有限公司 | Display panel, display screen and display equipment |
| CN109979976B (en) * | 2019-03-21 | 2021-03-30 | 昆山国显光电有限公司 | Display panel, display screen and display device |
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Application publication date: 20170510 |