CN106601667B - A kind of metal interconnecting layer structure and preparation method thereof with air-gap - Google Patents
A kind of metal interconnecting layer structure and preparation method thereof with air-gap Download PDFInfo
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Abstract
The metal interconnecting layer structure and preparation method thereof with air-gap that the present invention provides a kind of, comprising: by metal interconnecting wires line and be filled in the metal interconnecting layer therein filling metal and constituting positioned at substrate surface；There is barrier layer between the metal interconnecting wires line side wall and filling metal of metal interconnecting layer；There is air-gap between metal interconnecting wires line；And over the barrier layer, on metal interconnecting layer and exposure substrate surface be formed with spacer medium；The part that barrier layer is higher by filling metal top is inclined deformation barrier layer, and deformation barrier layer is tilted to air-gap center position, thus by opening diminution or closing above air-gap.The present invention effectively prevents to obtain air gap volume as big as possible in medium filling air-gap, thereby reduce effective k value of air-gap.In addition, method of the invention is compatible with the prior art, effective k value of air-gap is significantly reduced, and then meets ultra low k requirement of the WeiLai Technology generation to copper-connection medium.
Description
Technical field
The present invention relates to technical field of semiconductors, and in particular to a kind of metal interconnecting layer structure and its system with air-gap
Preparation Method.
Background technique
In recent years, the RC retardation ratio of copper interconnecting line have become entire IC chip RC retardation ratio important component it
One, and can not be ignored.Industry generallys use lower dielectric constant (Low-k) medium to reduce the RC retardation ratio of copper interconnecting line.?
For 90nm to 65nm technology generation, industry generally uses SiOCH medium of the dielectric constant 2.6~3.0, and it is heavy to generally use CVD technology
Product, it is integrated convenient for technique.Into 45nm technology generation, k value is generally further decreased using porous type SiOCH, dielectric constant can
Up to 2.4~2.7；Also have using C, H organic media, dielectric constant is 2.2~2.6.Into 28nm or less technology generation, industry is needed
It is considered as the ULK medium that dielectric constant is 2.0~2.2.Although the ultralow dielectric medium of the prior art is by k value
Be down near 2.0, be still unable to satisfy the technical requirements that metal line width further reduces, industry start to be considered as dielectric constant be
1 air is as connected medium, i.e. air-gap, and the technology may obtain volume production application in 10nm and following technology generation.
There are two types of mainstreams for copper/air-gap Integrated Solution: first is that being situated between using special material (condition decomposition) as interconnection layer
Matter completes entire process flow, then applies a specified conditions (such as 400 DEG C of high temperature) to special material and brings it about decomposition, becomes
It is released at gaseous material, ultimately forms air-gap.Second is that using conventional material (such as SiO2, Low-k) as interconnection layer it is sacrificial
Domestic animal medium anti-carves eating away sacrificial dielectric after completing current layer metallization, deposits the medium of one layer of filling capacity difference, is formed empty
Air gap.These technologies can meet the requirement that critical size further reduces, and there are skills during special material discharges for the former
Art risk；The latter is compatible with existing copper wiring technique, it is easier to realize volume production.
But for the second class copper/air-gap Integrated Solution using conventional sacrificial medium, form the covering of air-gap
Medium although possessing poor filling capacity, also can some dielectric deposition in the bottom and side wall of air-gap, wherein cover
Lid medium includes inter-metal medium (IMD) used in the copper wiring techniques such as the higher barrier layer SiCN of k value, Low-k medium.Cause
This, the medium for inserting air-gap can reduce the effective volume of air-gap, and more seriously, the high dielectric constant of filling can support
The contribution that the air-gap that disappears reduces effective k value, and then effective k value of air-gap is extremely difficult to lower than 2.0.
Summary of the invention
In order to overcome the above problems, the present invention is intended to provide a kind of metal interconnection between air-gap preparation method, to have
Effect limitation overwrite media enters air-gap.
In order to achieve the above object, the metal interconnecting layer structure with air-gap that the present invention provides a kind of, comprising:
One substrate；
By metal interconnecting wires and the metal interconnecting layer therein filling metal and collectively forming is filled in positioned at substrate surface；
There is barrier layer between the metal interconnecting wires side wall and filling metal of metal interconnecting layer；
There is air-gap between metal interconnecting wires；And
On the barrier layer, on the metal interconnecting layer and exposure the substrate surface be formed with spacer medium；
The part that the barrier layer is higher by filling metal top is inclined deformation barrier layer, deforms barrier layer to air-gap
Center position inclination, to reduce or close the opening above air-gap.
Preferably, also there is spacer medium between the metal interconnecting wires side wall and the air-gap.
Preferably, the spacer medium between the metal interconnecting wires side wall and the air-gap with a thickness of 1~2nm.
Preferably, the deformation barrier layer to the inclined angle of air-gap center position be 30~70 °.
Preferably, the height on the deformation barrier layer can be the 1/4-2/3 of the spacing of adjacent metal interconnecting wires.
In order to achieve the above object, the preparation side for the metal interconnecting layer structure with air-gap that the present invention also provides a kind of
Method, comprising:
Step 01: a substrate being provided, also, prepares by metal interconnecting wires in substrate surface and is filled in filling therein
The metal interconnecting layer that metal is constituted；Wherein, there is barrier layer between the metal interconnecting wires side wall of metal interconnecting layer and filling metal；
There is the first spacer medium between metal interconnecting wires；
Step 02: oxidation processes being carried out to substrate surface, make metal interconnecting layer Surface Creation oxide layer；
Step 03: using the oxide layer as exposure mask, etching first spacer medium, wherein retain and be located at the blocking
The first spacer medium and the first spacer medium positioned at no metal interconnecting wires region of layer side wall remove remaining first isolation and are situated between
Matter forms groove in metal interconnecting wires region；
Step 04: the oxide layer of removal metal interconnecting layer Surface Creation, so that at the top of the barrier layer of metal interconnecting wires side wall
The filling metal top being higher by the metal interconnecting wires；The metal is higher by the top of the barrier layer of the metal interconnecting wires side wall
The part of filling metal top in interconnection line is as deformation barrier layer；
Step 05: bombarding the deformation barrier layer, make the deformation barrier layer of the top of the recess sidewall to described
The center position of groove tilts；
Step 06: depositing the second spacer medium on the substrate for completing step 05, it is mutual that the spacer medium is covered in metal
Even layer surface, the dielectric surface of exposure and deformation barrier layer surface, to form air-gap in metal interconnecting layer.
Preferably, in the step 02, using O2Plasma carries out oxidation processes to substrate surface.
Preferably, in the step 02, the 1/ of the spacing with a thickness of the adjacent metal interconnecting wires of the oxide layer
4-2/3。
Preferably, in the step 03, the width of the first spacer medium of the barrier layer side wall of reservation is 1~2nm.
Preferably, in the step 04, the oxide layer is removed as etching agent using diluted non-oxidizing acid.
Preferably, in the step 05, physical bombardment is carried out to the deformation barrier layer using inert gas.
Preferably, the technological parameter of the physical bombardment includes: to use the flow of inert gas for 400~800sccm, is adopted
Alternating current source is 13~14MHz, the AC power used for 800~1200W, the process pressure that uses for 80~
150mTorr。
Preferably, in the step 05, controlling the deformation barrier layer to the inclined angle in groove center direction is
30~70 °.
The present invention limits the technology integrating method of the physically opening at the top of air-gap using metal barrier, can be effective
It prevents to obtain air gap volume as big as possible in the spacer medium being covered on air-gap filling air-gap, inhibit simultaneously
High dielectric constant enters air-gap, and then effectively reduces effective k value of air-gap.Air-gap process of the invention
Compatible with the prior art, the integrated difficulty of technique is little, effective k value of the second class air gap technique can be effectively reduced, and then meet
Ultra low k requirement of the WeiLai Technology generation to copper-connection medium.
Detailed description of the invention
Fig. 1 is the schematic diagram of the metal interconnecting layer structure with air-gap of a preferred embodiment of the invention
Fig. 2 is the stream of the preparation method of the metal interconnecting layer structure with air-gap of a preferred embodiment of the invention
Journey schematic diagram
Fig. 3~8 are the preparation method of the metal interconnecting layer structure with air-gap of a preferred embodiment of the invention
Each step schematic diagram
Specific embodiment
To keep the contents of the present invention more clear and easy to understand, below in conjunction with Figure of description, the contents of the present invention are made into one
Walk explanation.Certainly the invention is not limited to the specific embodiment, general replacement known to those skilled in the art
It is included within the scope of protection of the present invention.
Below in conjunction with attached drawing 1~7 and specific embodiment, invention is further described in detail.It should be noted that attached drawing
It is all made of very simplified form, using non-accurate ratio, and only to facilitate, clearly reach aid illustration the present embodiment
Purpose.
Referring to Fig. 1, the metal interconnecting layer structure with air-gap in the present embodiment, comprising:
One substrate 101；Here substrate 101 can be silicon substrate.
By metal interconnecting wires and the metal interconnection therein filling metal 103 and constituting is filled in positioned at 101 surface of substrate
Layer；There is barrier layer 104 between the metal interconnecting wires side wall and filling metal 103 of metal interconnecting layer；Specifically, barrier layer 104
TaN/Ta metal barrier can be used；Here filling metal 103 can be copper；Here metal interconnecting layer has flat table
Face.
There is air-gap 109 between metal interconnecting wires；And
On barrier layer 104, on metal interconnecting layer and exposure 101 surface of substrate be formed with spacer medium；
In the present embodiment, the part that barrier layer 104 here is higher by 103 top of filling metal is inclined deformation barrier layer
107'.Inclined deformation barrier layer 107' is tilted to 109 center position of air-gap, so that the opening of 109 top of air-gap be contracted
Small or closing.Here, also there is medium 102 between metal interconnecting wires side wall and air-gap 109.Barrier layer 104 in order to prevent
It is directly exposed to outer and indirect bring integrity problem, certain thickness first isolation is retained on metal interconnecting wires side wall
Medium 102, preferably, 102 part of the first spacer medium with a thickness of 1~2nm.Here, spacer medium includes being located at substrate 101
First spacer medium 102 on fringe region surface, positioned at the first spacer medium 102 of metal interconnecting wires side wall and positioned at exposed
First spacer medium 102,104 surface of barrier layer exposed, the second spacer medium 108 for filling 103 top of metal.
In the present embodiment, deformation barrier layer to the inclined angle of air-gap center position be 30~70 °, preferably 50~
60 °, in addition, deformation barrier layer 107 height can for adjacent metal interconnecting wires spacing 1/4-2/3, preferably 1/4
~1/3, to effectively reduce the opening size above air-gap, additionally it is possible to keep certain physical support intensity.
Below referring to Fig. 2, being done in detail to a kind of preparation method of metal interconnecting layer with air-gap of the present embodiment
Description, the preparation method include:
Step 01: referring to Fig. 3, provide a substrate 101, also, prepare by metal interconnecting wires on 101 surface of substrate and
It is filled in the metal interconnecting layer that filling metal 103 therein is constituted；Wherein, the metal interconnecting wires side wall of metal interconnecting layer and filling
There is barrier layer 104 between metal 103；The first spacer medium 102 is filled between metal interconnecting wires；
Specifically, substrate 101 here can be silicon substrate.The material of first spacer medium 102 can be using routine
Sacrificial layer material.It is possible, firstly, to but be not limited to be situated between using chemical vapor deposition process in the first isolation of 101 surface of substrate deposition
Matter 102, first spacer medium 102 can be multilayer dielectricity layer, such as successively include: from the bottom up SiCN dielectric barrier,
Low-k dielectric layer and SiON medium protective layer etc..It is then possible to using lithography and etching technique in the first spacer medium 102
Etch metal interconnecting wires；It uses again but is not limited to physical gas-phase deposition and deposit barrier layer 104 in metal interconnecting wires, hinder
Barrier 104 can use TaN/Ta metal barrier, then use but be not limited to physical gas-phase deposition in metal interconnecting wires
Interior deposited metal seed layer, then filling metal 103 is formed, here come the deposited metal in metal interconnecting wires using electroplating technology
Filling metal 103 can be copper；Finally, can be, but not limited to use CMP process by the first spacer medium 102
The metal removal on surface obtains the metal interconnecting layer of flat surfaces.
Step 02: referring to Fig. 4, carrying out oxidation processes to 101 surface of substrate, making metal interconnecting layer Surface Creation oxide layer
105；
Specifically, being can be, but not limited to here using O2Plasma carries out oxidation processes to 101 surface of substrate, to make
The filling metal 103 on 103 surface of filling metal in metal interconnecting wires is converted into oxide layer 105, here, raw on filling copper surface
At fine and close copper oxide (CuO2)；Here, oxidation processes are carried out to 101 surface of substrate, it can be using CCR capacitance coupling mode
Dry etching technology, while it being passed through purity oxygen, technological parameter includes: that oxygen flow is 100-300sccm, process pressure 20-
60mTorr first uses 60MHz high frequency ionization source by O2Ionization, ionization power is 300-600W, then uses 1~2MHz low frequency
Bias source controls O2Plasma flies to surface of silicon, bias power 30-80W.Since sacrificial dielectric 102 is exposed to O simultaneously2
In plasma atmosphere, reduction bias power acts on as far as possible to weaken physical bombardment suffered by 102 surface of sacrificial dielectric.This
Outside, the thickness of the oxide layer 105 on filling 103 surface of metal can also be accurately controlled by adjusting bias power and process time
Degree.
This layer of oxide layer 105 can be used as passivation layer first and be used in subsequent etching sacrificial dielectric 102 to filling metal
103 are protected, secondly, being also used to define the height on deformation after unloading barrier layer, thus envelope of the control to the groove being subsequently formed
Lid degree.Here, since the height on deformation barrier layer is determined by the thickness of oxide layer, and deform that barrier layer is too high to be unfavorable for it
Physical support intensity, therefore, it is necessary to select optimal oxidated layer thickness, oxygen according to design rule and actual physics support experiment
Change the 1/4~2/3 of the spacing with a thickness of adjacent metal interconnecting wires of layer, preferable oxidated layer thickness is 1/4-1/3.
Step 03: referring to Fig. 5, being exposure mask with oxide layer 105, etching the first spacer medium 102, wherein reservation is located at
First spacer medium 102 of 104 side wall of barrier layer and the first spacer medium 102 positioned at no metal interconnecting wires region, removal
Remaining first spacer medium 102 forms groove 106 in the region of the first spacer medium 102 removal；
Specifically, using Low-k medium dry etch process conventional in copper wiring technique by 102 quarter of the first spacer medium
Eating away, and removed etch residue using conventional wet clean process, which is not described herein again.It should be noted that in order to
Prevent barrier layer 104 to be directly exposed to outer and bring integrity problem indirectly, cannot by first between metal interconnecting wires every
It is all etched away from medium 102, and to retain certain thickness first spacer medium 102 on metal interconnecting wires side wall, preferably
, the first spacer medium 102 positioned at barrier layer side wall of reservation with a thickness of 1~2nm.
Step 04: referring to Fig. 6, the oxide layer 105 of removal metal interconnecting layer Surface Creation, so that metal interconnecting wires side wall
Barrier layer 104 at the top of be higher by the top of filling metal 103 in metal interconnecting wires；
Specifically, can be, but not limited to remove oxide layer 105 using wet-etching technology.Here it is possible to using dilution
Non-oxidizing acid make a return journey removing oxide layer 105 as etching agent, diluted non-oxidizing acid is H2The ratio of O and HCl be 150~
The dilute hydrochloric acid of 200:1, or be H2The ratio of O and HF is the dilute hydrofluoric acid of 1900~2000:1；These are diluted non-oxide
Property acid only chemically reacted with oxide layer, without corrosion metal interconnecting wires in filling metal 103 and barrier layer 104.
Here, after oxide layer 105 is removed, the barrier layer 104 of metal interconnecting wires side wall can protrude filling metal 103 and push up
Portion is higher by the part conduct at 103 top of filling metal in metal interconnecting wires at the top of the barrier layer 104 of interconnection channel side wall
" deformation barrier layer " 107；The height on deformation barrier layer 107 is determined by the thickness of oxide layer 105, therefore, deforms barrier layer 107
Height is the 1/4~2/3 of the spacing of adjacent metal interconnecting wires, preferably, being 1/4~1/3, it is strong to obtain higher physics in this way
Degree.
Step 05: please referring to Fig. 7 and combine Fig. 6, bombardment deformation barrier layer 107 makes the deformation of the top of 106 side wall of groove
Barrier layer 107 is tilted to the center position of groove 106；
Specifically, deformation barrier layer 107 can be bombarded using physical bombardment method.Physical bombardment is specifically included using lazy
Property gas, such as argon gas forms plasma to realize the bombardment to deformation barrier layer.The technological parameter of physical bombardment includes:
Use the flow of inert gas for 400~800sccm, the alternating current source used is 13~14MHz, and the AC power that uses is 800
~1200W, the process pressure used is 80~150mTorr.Here, the high power short time is used under higher gas pressure intensity
Process conditions, inert gas plasma can obtain high-energy, simultaneously because mean free path shortens, collision probability becomes
Greatly, the up rightness of inert gas ion running body is deteriorated, and is conducive to the lateral physical bombardment for deforming barrier layer 107, and make to deform
The inclination of certain angle occurs for barrier layer 107, to form inclined deformation barrier layer 107'.In addition, by process pressure and
AC power can control the inclined degree of deformation barrier layer 107', can control deformation barrier layer 107' here to groove 106
The inclined angle of center position is 30~70 °, preferably 50~60 °, to effectively reduce the open-mouth ruler of the top of groove 106
It is very little, additionally it is possible to keep certain physical support intensity, be conducive to subsequent inter-level dielectric be covered on deformation barrier layer 107' on and
Groove 106 is set to form air-gap.
Step 06: referring to Fig. 8, the second spacer medium 108 is deposited on the substrate 101 for completing step 05, the second isolation
Medium 108 is covered in metal interconnecting layer surface, 102 surface of the first spacer medium of exposure and deformation 104 surface of barrier layer, thus
Air-gap 109 is formed in metal interconnecting layer.
Specifically, the second spacer medium 108 and the first spacer medium 102 collectively form spacer medium.Second spacer medium
108 can be conventional inter-level dielectric.Here it can be, but not limited to using the chemical vapor deposition in conventional copper wiring technique
Method deposits the second spacer medium 108, to form air-gap 109.Second spacer medium 108 can use SiCN dielectric impedance
Layer, Low-k dielectric layer and SiON medium protective layer it is one or more.Incorporated by reference to Fig. 8 and Fig. 6, due to deforming barrier layer 107'
Reduce the opening of the top of groove 106, in the groove 106 more difficult to get access of the second spacer medium 108, or it is only a small amount of insignificant
Second spacer medium, 108 material can deposit to 106 bottom of groove, so that it is guaranteed that entire groove 106 is made to be used as air-gap 109, phase
Than in traditional handicraft, the volume of air-gap 109 prepared by the present embodiment increases, and the ruler of control groove 106 can be passed through
The very little size to control air-gap 109 realizes the controllable of 109 size of air-gap.
It should be noted that deformation barrier layer 107 is the 1/4-1/ of the spacing of adjacent metal interconnecting wires in the present embodiment
3, so that deformation barrier layer 107 can only cover a part of 106 top of groove after tilting, and it cannot all cover the top of groove 106
Portion；Certainly, in the present embodiment, the height on deformation barrier layer 107 may be arranged as the 1/ of the spacing of adjacent metal interconnecting wires
, so that 106 upper opening of groove can be covered completely after deformation barrier layer 107' is tilted to 106 center position of groove
It covers.
In conclusion the present invention limits the integrated side of technique of the physically opening at the top of air-gap using metal barrier
Method can effectively prevent to obtain air gap volume as big as possible, while inhibiting high dielectric in overwrite media filling air-gap
Constant medium enters air-gap, and then effectively reduces effective k value of air-gap.Air-gap process of the invention with it is existing
Technical compatibility, the integrated difficulty of technique is little, and effective k value of the second class air gap technique can be effectively reduced, and then meets the following skill
Ultra low k requirement of the art generation to copper-connection medium.
Although the present invention is disclosed as above with preferred embodiment, right embodiment is illustrated only for the purposes of explanation, and
It is non-to limit the present invention, those skilled in the art can make without departing from the spirit and scope of the present invention it is several more
Dynamic and retouching, the protection scope that the present invention is advocated should be subject to claims.
Claims (10)
1. a kind of metal interconnecting layer structure with air-gap, comprising:
One substrate；
Positioned at the metal interconnecting layer of substrate surface being made of the metal interconnecting wires filled with filling metal；
There is metal barrier between the metal interconnecting wires side wall and filling metal of metal interconnecting layer；
There is air-gap between metal interconnecting wires；And
On the metal barrier, on the metal interconnecting layer and exposure the substrate surface be formed with spacer medium；Its
It is characterized in that,
The part that the metal barrier is higher by filling metal top is inclined deformable metal barrier layer, deformable metal barrier layer
It is tilted to air-gap center position, so that the opening above air-gap be reduced, the deformable metal barrier layer is by bombardment
The metal barrier of deformation.
2. the metal interconnecting layer structure according to claim 1 with air-gap, which is characterized in that the metal interconnecting wires
Also there is spacer medium between side wall and the air-gap.
3. the metal interconnecting layer structure according to claim 2 with air-gap, which is characterized in that the metal interconnecting wires
Spacer medium between side wall and the air-gap with a thickness of 1~2nm.
4. the metal interconnecting layer structure according to claim 1 with air-gap, which is characterized in that the deformable metal resistance
Barrier to the inclined angle of air-gap center position be 30~70 °.
5. the metal interconnecting layer structure according to claim 1 with air-gap, which is characterized in that the deformable metal resistance
The height of barrier is the 1/4-2/3 of the spacing of adjacent metal interconnecting wires.
6. a kind of preparation method of the metal interconnecting layer structure with air-gap characterized by comprising
Step 01: a substrate being provided, also, prepares in substrate surface and is made of the metal interconnecting wires filled with filling metal
Metal interconnecting layer；Wherein, there is metal barrier between the metal interconnecting wires side wall of metal interconnecting layer and filling metal；Metal is mutual
There is the first spacer medium between line；
Step 02: oxidation processes being carried out to substrate surface, make to fill oxidation on metal surface；
Step 03: etching first spacer medium, wherein retain the first spacer medium for being located at the metal barrier side wall
And the first spacer medium positioned at no metal interconnecting wires region, remaining first spacer medium is removed, in metal interconnecting wires region
Form groove；
Step 04: the part of removal filling oxidation on metal surface, so that being higher by the top of the metal barrier of metal interconnecting wires side wall
Filling metal top in the metal interconnecting wires；The metal is higher by the top of the metal barrier of the metal interconnecting wires side wall
The part of filling metal top in interconnection line is as deformable metal barrier layer；
Step 05: bombard the deformable metal barrier layer, make the deformable metal barrier layer of the top of the recess sidewall to
The center position of the groove tilts；
Step 06: depositing the second spacer medium on the substrate for completing step 05, the spacer medium is covered in metal interconnecting layer
Surface, the dielectric surface of exposure and deformable metal barrier layer surface, to form air-gap in metal interconnecting layer.
7. preparation method according to claim 6, which is characterized in that in the step 02, using O2Plasma is to substrate
Surface carries out oxidation processes；Also, it is described filling oxidation on metal surface part with a thickness of the adjacent metal interconnecting wires
Spacing 1/4-2/3.
8. preparation method according to claim 6, which is characterized in that in the step 03, the metal barrier of reservation
The width of first spacer medium of layer side wall is 1~2nm.
9. preparation method according to claim 6, which is characterized in that in the step 04, using diluted non-oxidizable
Acid removes the part of filling oxidation on metal surface as etching agent.
10. preparation method according to claim 6, which is characterized in that in the step 05, using inert gas to described
Deformable metal barrier layer carries out physical bombardment；The technological parameter of the physical bombardment includes: to use the flow of inert gas for 400
~800sccm, the alternating current source used for 13~14MHz, the AC power used for 800~1200W, the process pressure that uses for
80~150mTorr；And in step 05, the deformable metal barrier layer is controlled to the inclined angle in groove center direction
It is 30~70 °.
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