CN106560933A - Light-emitting device with angle-guiding reflection structure and manufacturing method thereof - Google Patents

Abstract

The present invention proposes a light-emitting device with a chamfered reflective structure and a manufacturing method thereof. The light-emitting device includes an LED chip, a fluorescent structure and a reflective structure. The fluorescent structure is disposed on the LED chip, the side surface of the fluorescent structure is inclined, and the bottom surface of the fluorescent structure is located on the upper surface of the LED chip; the reflective structure covers the side surface of the LED chip and the side surface of the fluorescent structure and presents an inclined chamfered angle. The present invention also proposes a manufacturing method, which can manufacture the above-mentioned light-emitting device. Thereby, the light-emitting device with a chamfered reflective structure can increase the luminous efficiency, change the luminous angle, improve the spatial light uniformity, and achieve a small divergence angle with a small package size.

Description

Light emitting device with corner reflective structure and manufacturing method thereof

technical field

The present invention relates to a light emitting device and a manufacturing method thereof, in particular to a light emitting device with a corner reflective structure and a manufacturing method thereof.

Background technique

LED (Light Emitting Diode) chips are generally used to provide light sources for illumination or indication, and LED chips are usually placed in a package structure, or covered or covered by a fluorescent material to become a light emitting device.

Light-emitting devices can obtain good luminous efficiency and specific luminous angles through appropriate design schemes. For example, the traditional high-economic-benefit bracket type (PLCC) LED package can increase its luminous efficiency through the design of the reflective cup and achieve a specific The light emitting angle, but the bracket type LED package has its inherent limitations, for example: the light travel path in the fluorescent glue is greatly different, resulting in poor spatial light uniformity and yellow halo, the light output area is much larger than the LED chip area, resulting in a specific direction unit area The low light intensity and large light output area make it difficult to design secondary optical lenses, and the high thermal resistance makes heat dissipation difficult. Therefore, using LED flip chip (chip scale) packaging to produce small-sized light-emitting devices and approaching the ideal point light source can effectively solve the above problems, and because small-sized chip-scale packaging can further reduce production costs, Therefore, this trend has become the goal of the industry. However, as the size of the light emitting device shrinks, it becomes difficult to apply a solution that can be applied to a large size light emitting device originally.

In the current small-sized light-emitting device, due to the limitations of the existing technology, the reflective structure vertically covers the side of the fluorescent structure. This structure causes the light entering the reflective structure inside the fluorescent material to be larger due to the limitation of the critical angle. Part of it is reflected back into the fluorescent material or the LED chip, and is not easily guided to the top surface of the fluorescent structure to be extracted out of the light-emitting device, thus causing more light energy to be lost inside the light-emitting device, so its luminous efficiency can still be further improved. In addition, there is no effective solution for adjusting the light-emitting angle in the current small-sized light-emitting devices.

In view of this, providing a technical solution that can improve the luminous efficiency of the light-emitting device, enhance the uniformity of light in the space, reduce the divergence angle, approach the ideal point light source in the light-emitting area, reduce the thermal resistance or adjust the light-emitting angle is the industry's expectation. solved problem.

Contents of the invention

An object of the present invention is to provide a light-emitting device and its manufacturing method, which can improve the luminous efficiency and spatial light uniformity of the light-emitting device to avoid the generation of yellow halo, or adjust its light-emitting angle, while having a small light-emitting area and low thermal resistance .

Another object of the present invention is to provide a light-emitting device and a manufacturing method thereof, which can enable a small-sized light-emitting device to have good luminous efficiency and/or spatial light uniformity to avoid yellow halos, or to adjust its light-emitting angle.

To achieve the above purpose, a light emitting device disclosed in the present invention includes an LED chip, a fluorescent structure and a reflective structure. The LED chip has an upper surface, a lower surface opposite to the upper surface, a side surface and an electrode group, the side surface is formed between the upper surface and the lower surface, and the electrode group is arranged on the lower surface; The structure is arranged on the LED chip, which has a top surface, a bottom surface opposite to the top surface, and a side surface formed between the top surface and the bottom surface, wherein the top surface is larger than the bottom surface, so that the side surface is opposite to the bottom surface. The top surface and the bottom surface present an inclined shape, and the bottom surface is located on the upper surface of the LED chip; the reflective structure covers the side surfaces of the LED chip and the fluorescent structure.

To achieve the above purpose, a light emitting device disclosed in the present invention includes an LED chip, a transparent structure and a reflective structure. The LED chip has an upper surface, a lower surface opposite to the upper surface, a side surface and an electrode group, the side surface is formed between the upper surface and the lower surface, the electrode group is arranged on the lower surface; the transparent The structure is arranged on the LED chip, which has a top surface, a bottom surface opposite to the top surface, and a side surface formed between the top surface and the bottom surface, the size of the top surface is greater than or equal to the size of the bottom surface, the The bottom surface is located on the upper surface of the LED chip; the reflective structure covers the sides of the LED chip and the transparent structure, wherein a height of the reflective structure is not less than 0.1 times a length of the LED chip, and is not greater than 5 times the length of the LED chip.

To achieve the above object, the present invention discloses a method for manufacturing a light-emitting device, comprising: forming a fluorescent structure with an inverted tapered side; disposing the fluorescent structure on an LED chip to form a light-emitting structure; and The side surface of the light-emitting structure is covered to form a reflective structure with an inverted tapered inner surface.

Thereby, the light-emitting device and its manufacturing method of the present invention can at least provide the following beneficial effects: the reflective structure with chamfering can make the light of the LED chip more easily drawn out of the light-emitting device, which can increase the luminous efficiency and/or light uniformity ; In addition, the fluorescent structure can be slightly larger than the LED chip, so the light-emitting device formed can have a small-sized appearance. On the other hand, the fluorescent structure with inclined sides can be easily manufactured, and the angle of inclination of the inclined sides can also be adjusted, thereby controlling the light emitting angle.

In order to make the above objectives, technical features and advantages more comprehensible, the following is a detailed description of preferred embodiments with the accompanying drawings.

Description of drawings

FIG. 1 is a schematic diagram of a light emitting device according to a first preferred embodiment of the present invention.

FIG. 2 is a schematic diagram of a light emitting device according to a second preferred embodiment of the present invention.

FIG. 3 is a schematic diagram of a light emitting device according to a third preferred embodiment of the present invention.

FIG. 4 is a schematic diagram of a light emitting device according to a fourth preferred embodiment of the present invention.

FIG. 5 is a schematic diagram of a light emitting device according to a fifth preferred embodiment of the present invention.

FIG. 6 is a schematic diagram of a light emitting device according to a sixth preferred embodiment of the present invention.

FIG. 7 is a schematic diagram of a light emitting device according to a seventh preferred embodiment of the present invention.

FIG. 8 is a schematic diagram of a light emitting device according to an eighth preferred embodiment of the present invention.

FIG. 9 is a schematic diagram of a light emitting device according to a ninth preferred embodiment of the present invention.

FIG. 10 is a schematic diagram of a light emitting device according to a tenth preferred embodiment of the present invention.

11A to 11D are schematic diagrams of the steps of forming a fluorescent film in the method of manufacturing a light emitting device according to a preferred embodiment of the present invention.

12A to 12C are schematic diagrams of the steps of forming another fluorescent film in the manufacturing method of the light emitting device according to the preferred embodiment of the present invention.

13A and 13B are schematic diagrams and comparison diagrams of light transmission in the light emitting device (the fluorescent layer of the fluorescent structure is not shown).

14 and 15 are schematic diagrams of the steps of forming another fluorescent film in the manufacturing method of the light emitting device according to the preferred embodiment of the present invention.

16A to 16F are schematic diagrams of the steps of die-cutting the fluorescent film in the manufacturing method of the light emitting device according to the preferred embodiment of the present invention.

FIG. 17 is a schematic diagram of the steps of cutting the fluorescent film in the manufacturing method of the light emitting device according to the preferred embodiment of the present invention.

FIG. 18A and FIG. 18B are schematic diagrams of steps of forming a light emitting structure in a method for manufacturing a light emitting device according to a preferred embodiment of the present invention.

FIG. 19 is a schematic diagram of steps of forming a reflective structure in a method of manufacturing a light emitting device according to a preferred embodiment of the present invention.

FIG. 20 is a schematic diagram of the steps of removing auxiliary materials in the manufacturing method of the light emitting device according to a preferred embodiment of the present invention.

FIG. 21 is a schematic diagram of the steps of cutting the reflective structure in the manufacturing method of the light emitting device according to the preferred embodiment of the present invention.

Fig. 22A, Fig. 22B, Fig. 22D and Fig. 22E are schematic diagrams of a light-emitting device according to an eleventh preferred embodiment of the present invention, wherein Fig. 22D and Fig. 22E further show a schematic diagram of light transmission in the light-emitting device, and Fig. 22C shows Schematic diagram of light transfer when a light-emitting device has uniformly distributed fluorescent materials.

Reference number

1A, 1B, 1C, 1D, 1E, 1F, 1G, 1H, 1I, 1J, 1K Lighting devices

10 LED chips

11 upper surface

12 lower surface

13 sides

14 electrode sets

20 fluorescent structures

20’ transparent structure

200 fluorescent film

201 fluorescent layer

201’ fluorescent layer

202 Light-transmitting layer

203 lens array layer

21 Top

22 Bottom

23 side, sloped side

23’ vertical sides

30 reflective structures

31 Medial side

32 Inside chamfer, inside bevel

33 Top

34 Bottom

35 outside

40 substrates

50, 50’, 50” auxiliary material

60 punching cutter

61 blade

70 saw wheel or double angle milling cutter

71 blade

L light

X tilt up

T Thickness

W length

H height

detailed description

Please refer to FIG. 1 , which is a schematic diagram of a light emitting device according to a first preferred embodiment of the present invention. The light emitting device 1A may include an LED chip 10 , a fluorescent structure 20 and a reflective structure 30 , and the technical content of the multiple components will be described in sequence as follows.

The LED chip 10 can be a flip-chip type chip, and can have an upper surface 11 , a lower surface 12 , a side surface 13 and an electrode group 14 in appearance. The upper surface 11 and the lower surface 12 are oppositely disposed, and the side surface 13 is formed between the upper surface 11 and the lower surface 12 and connects the upper surface 11 and the lower surface 12 . The electrode group 14 is disposed on the lower surface 12 and may have more than two electrodes. Electric energy (not shown in the figure) can be supplied into the LED chip 10 through the electrode group 14, and then the LED chip 10 is made to emit light. Most of the light emitted by the LED chip 10 exits from the upper surface 11 .

The fluorescent structure 20 can change the wavelength of light emitted by the LED chip 10, and can have a top surface 21, a bottom surface 22 and a side surface 23 in appearance; the top surface 21 and the bottom surface 22 are opposite and oppositely arranged, and the side surface 23 is formed on Between the top surface 21 and the bottom surface 22 and connected to the top surface 21 and the bottom surface 22 . The top surface 21 and the bottom surface 22 can be horizontal planes, so they can be parallel.

The top surface 21 is larger than the bottom surface 22 , that is, the area of the top surface 21 is larger than that of the bottom surface 22 , so the top surface 21 can cover the bottom surface 22 when viewed downward along the normal direction. When the top surface 21 is larger than the bottom surface 22 , the side surface 23 will present an inclined shape relative to the top surface 21 and the bottom surface 22 , so the side surface 23 can also be called the inclined side surface 23 . The inclined side surface 23 is formed along the contours of the top surface 21 and the bottom surface 22 , so the inclined side surface 23 is ring-shaped relative to the top surface 21 and the bottom surface 22 . Therefore, the fluorescent structure 20 appears as a frustum in appearance, and the side surface 23 is an inverted conical side.

The fluorescent structure 20 may structurally include a fluorescent layer 201 and at least one transparent layer 202 , and at least one transparent layer 202 is formed on the fluorescent layer 201 , or in other words, the transparent layer 202 is stacked on the fluorescent layer 201 . Both the light-transmitting layer 202 and the fluorescent layer 201 can allow light to pass through, so their manufacturing materials can include a light-transmitting material such as a light-transmitting resin, while the manufacturing material of the fluorescent layer 201 further includes phosphor powder, which is mixed with the light-transmitting material middle. When the light from the LED chip 10 passes through the fluorescent layer 201 , the wavelength of part of the light will change, and then continue to pass through the transparent layer 202 .

Although the light-transmitting layer 202 does not change the wavelength of light, it can protect the fluorescent layer 201 so that substances in the environment are not easy to contact the fluorescent layer 201 . In addition, the light-transmitting layer 202 can also increase the overall structural strength of the fluorescent structure 20 so that the fluorescent structure 20 is not easy to bend and provide sufficient operability in production.

The fluorescent structure 20 is positioned on the LED chip 10 , and the bottom surface 22 of the fluorescent structure 20 is located on the upper surface 11 of the LED chip 10 , so the top surface 21 and the inclined side surface 23 are also located on the upper surface 11 of the LED chip 10 . In other words, the entire fluorescent structure 20 is located on the upper surface 11 of the LED chip 10 .

Preferably, the bottom surface 22 of the fluorescent structure 20 can be pasted to the upper surface 11 of the LED chip 10 through an adhesive (such as silica gel) or adhesive tape (not shown), so that the fluorescent structure 20 and the LED chip 10 The fixation between them is better. In addition, the bottom surface 22 of the fluorescent structure 20 may not be smaller than (ie, greater than or equal to) the upper surface 11 of the LED chip 10 , so the fluorescent structure 20 may shield the LED chip 10 when viewed downward along the normal direction.

The reflective structure 30 covers the side surface 13 of the LED chip 10 and the inclined side surface 23 of the fluorescent structure 20 , but does not cover the top surface 21 of the fluorescent structure 20 ; in this embodiment, the inclined side surface 23 of the fluorescent structure 20 is completely covered. The reflective structure 30 can block the light from the LED chip 10 , so the light is reflected at the side 13 and the inclined side 23 , and finally guided to the top surface 21 .

Preferably, when the reflective structure 30 covers the side surface 13 and the inclined side surface 23 , it will adhere to the side surface 13 and the inclined side surface 23 so that there is no gap between the reflective structure 30 and the side surface 13 and the inclined side surface 23 . Therefore, the reflective structure 30 has an inner side 31 attached to the side 13, and an inner chamfer (or called an inner slope) 32 attached to the inclined side 23; since the inclined side 23 is an inverted tapered side, the The fitted inner chamfer 32 is an inner surface of an inverted cone, so that the reflective structure 30 presents an inner chamfer reflective surface. In addition, a top surface 33 of the reflective structure 30 can be flush with the top surface 21 of the fluorescent structure 20; the reflective structure 30 also has an outer surface 35, which is separated from the inner surface 31 and the inner slope 32, and the outer surface 35 can be vertical plane.

In terms of manufacturing materials, the reflective structure 30 can be made of a material containing a reflective resin, such as polyphthalamide (polyphthalamide, namely PPA), polycyclohexanedimethanol terephthalate Ester (Polycyclolexylene-di-methylene Terephthalate, PCT) or thermosetting epoxy resin (Epoxymolding compound, EMC).

The reflective structure 30 can also be made of another material including a light-transmitting resin, and the light-transmitting resin includes reflective particles. The light-transmitting resin can be, for example, silica gel or low reflectance silica gel (the refractive index can be about 1.35 to 1.45), and the reflective particles can be titanium dioxide (TiO ₂ ), boron nitride (BN), silicon dioxide (SiO ₂ ) or aluminum oxide (Al ₂ O ₃ ); the reflective particles can be sized to about 0.5 times the wavelength of visible light. In addition to the above-mentioned manufacturing materials, the reflective structure 30 may also be made of other materials.

The above is the technical content of each component of the light emitting device 1A, and the light emitting device 1A has at least the following technical features.

As shown in FIG. 13A, the fluorescent structure 20 has an inclined side 23, so that the light L of the LED chip 10, or the light converted and emitted by the fluorescent layer 201 (as shown in FIG. 1 ), can be more efficiently emitted along the inclined side 23. Exit the fluorescent structure 20; in other words, the inclined side 23 is conducive to guide the light L to exit the top surface 21 of the fluorescent structure 20, and it is not easy to cause the light L to be reflected back into the fluorescent structure 20 or the LED chip 10, thereby reducing the loss of light energy . Therefore, the light L emitted by the LED chip 10 can be well extracted out of the fluorescent structure 20 , so that the light emitting device 1A as a whole has good luminous efficiency. Compared with the fluorescent structure 20 without inclined sides (as shown in FIG. 13B , light L is likely to be mostly reflected back into the fluorescent structure 20 or LED chip 10 on the top surface 21 due to the limitation of the critical angle), with inclined sides 23 fluorescent structure 20 will be easier to understand for the improvement of luminous efficiency.

In addition, the inclined side surface 23 of the fluorescent structure 20 can not only improve the light extraction efficiency, but also enable the light emitting device 1A to have good spatial light uniformity and avoid yellow halos. Furthermore, when the inclined side surfaces 23 have different inclination angles, the light emitting device 1A will have different light emitting angles, so the purpose of adjusting the light emitting angles can be achieved by designing the inclination angles.

The fluorescent structure 20 can increase the luminous efficiency by adjusting the refractive index of the transparent layer 202 to be smaller than that of the fluorescent layer 201 in addition to increasing the luminous efficiency by inclined side surfaces 23 . That is, the refractive index of the light-transmitting layer 202 can be between the fluorescent layer 201 and the air, so that when the light from the LED chip 10 enters the air through the light-transmitting layer 202, the reflection on the interface due to the difference in refractive index can be reduced. .

If there are more than two light-transmitting layers 202 (not shown in the figure), the refractive index of the plurality of light-transmitting layers 202 can be different (that is, the manufacturing materials of the two light-transmitting layers 202 are different), and the refractive index of the upper one The index of refraction is smaller than that of the one below. In this way, the luminous efficiency can be further improved.

On the other hand, the fluorescent structure 20 can be only slightly larger than the LED chip 10, so when the LED chip 10 is small in size, the fluorescent structure 20 can also be set in a small size; and the reflective structure 30 for coating can also be set in a small size, The size of the final light-emitting device 1A is made small. In other words, if the size of the light-emitting device 1A needs to be designed to be small or chip-scale, it is also feasible to use the fluorescent structure 20 , and the luminous efficiency can be increased. In one example, the width and length of the light emitting device 1A correspond to the length and width of the reflective structure 30 , and the width is not greater than 2.0 mm, and the length is not greater than 3.0 mm.

The above is the description of the technical content of the light emitting device 1A, and then the technical content of the light emitting device according to other embodiments of the present invention will be described, and the technical content of the light emitting device of each embodiment can be referred to each other, so the same parts will be omitted or simplified .

Please refer to FIG. 2 , which is a schematic diagram of a light emitting device according to a second preferred embodiment of the present invention. The light-emitting device 1B is different from other light-emitting devices at least in that, in the fluorescent structure 20 of the light-emitting device 1B, the light-transmitting layer 202 is formed under the fluorescent layer 201 . That is, the transparent layer 202 is located between the fluorescent layer 201 and the upper surface 11 of the LED chip 10 , so the fluorescent layer 201 will not contact the LED chip 10 . Therefore, the heat energy generated during the operation of the LED chip 10 will not affect the fluorescent layer 201, that is, the temperature of the fluorescent layer 201 will not rise due to the heat energy, so the efficiency of the fluorescent layer 201 in converting light wavelengths is not easy to decay. . In addition, the refractive index of the fluorescent layer 201 may be smaller than that of the transparent layer 202 to increase the luminous efficiency.

Please refer to FIG. 3 , which is a schematic diagram of a light emitting device according to a third preferred embodiment of the present invention. The light emitting device 1C differs from other light emitting devices at least in that the fluorescent structure 20 of the light emitting device 1C further includes a lens array layer 203 formed on the fluorescent layer 201 . The lens array layer 203 can be integrally formed with the light-transmitting layer 202, so the light-transmitting layer 202 can be regarded as a part of the lens array layer 203; the lens array layer 203 can be higher than the top surface 33 of the reflective structure 30, so that the top surface of the fluorescent structure 20 21 is higher than the top surface 33 of the reflective structure 30 . The lens array layer 203 can further increase the luminous efficiency of the light emitting device 1C.

Please refer to FIG. 4 , which is a schematic diagram of a light emitting device according to a fourth preferred embodiment of the present invention. The light emitting device 1D differs from other light emitting devices at least in that the fluorescent structure 20 of the light emitting device 1D includes a plurality of transparent layers 202 , and the fluorescent layer 201 is formed between the plurality of transparent layers 202 . Under such a configuration, the transparent layer 202 can protect the fluorescent layer 201 and can reduce the influence of the heat energy of the LED chip 10 on the fluorescent layer 201 . In addition, the refractive index of the fluorescent layer 201 may be smaller than that of the lower transparent layer 202 but larger than that of the upper transparent layer 202 to increase luminous efficiency.

Please refer to FIG. 5 , which is a schematic diagram of a light emitting device according to a fifth preferred embodiment of the present invention. The light emitting device 1E differs from other light emitting devices at least in that the fluorescent structure 20 of the light emitting device 1E is a single-layer fluorescent structure, that is, only includes a fluorescent layer 201 without a transparent layer. Therefore, the thickness of the fluorescent layer 201 can be relatively large, which can convert a large proportion of light into wavelengths, and is suitable for LED light emitting devices that need to convert a large amount of light wavelengths, such as white LEDs with low color temperature.

Please refer to FIG. 6 , which is a schematic diagram of a light emitting device according to a sixth preferred embodiment of the present invention. The light emitting device 1F differs from other light emitting devices at least in that the light emitting device 1F further includes a substrate 40 on which the LED chip 10 and the reflective structure 30 are disposed, and the electrode group 14 of the LED chip 10 is further electrically connected to the substrate 40 . The substrate 40 is an element capable of transmitting electric energy (such as a circuit board, a bracket, etc.), so the electric energy can be supplied to the light emitting device 1F through the substrate 40 . The reflective structure 30 can further extend between the lower surface 12 of the LED chip 10 and the substrate 40 .

Please refer to FIG. 7 , which is a schematic diagram of a light emitting device according to a seventh preferred embodiment of the present invention. The light emitting device 1G differs from other light emitting devices at least in that the top surface 21 of the fluorescent structure 20 of the light emitting device 1G is higher than the top surface 33 of the reflective structure 30 , and the inclined side surface 23 of the fluorescent structure 20 is partially exposed from the reflective structure 30 . In other words, the reflective structure 30 only partially covers the inclined side surface 23 of the fluorescent structure 20 . Since the top surface 33 of the reflective structure 30 is lower than the top surface 21 of the fluorescent structure 20, the reflective structure 30 will not spread to the top surface 21 of the fluorescent structure 20 when it is formed, thus increasing the tolerance of the process error and effectively improving the yield. Therefore, the production cost can be further reduced without using a mold (for details, please refer to the manufacturing method in the embodiments described later).

Please refer to FIG. 8 , which is a schematic diagram of a light emitting device according to an eighth preferred embodiment of the present invention. The light-emitting device 1H is different from other light-emitting devices at least in that, although the reflective structure 30 of the light-emitting device 1H completely covers the inclined side surface 23 of the fluorescent structure 20, the top surface 33 of the reflective structure 30 is not a plane, but is drawn from an inner angle. 32 gradually slopes downward; in other words, the top surface 33 of the reflective structure 30 is recessed downward from the top surface 21 of the fluorescent structure 20 . When the reflective structure 30 of this form is formed, the tolerance of process error can also be increased.

Please refer to FIG. 9 , which is a schematic diagram of a light emitting device according to a ninth preferred embodiment of the present invention. The light-emitting device 1I is different from other light-emitting devices at least in that the top surface 21 of the fluorescent structure 20 of the light-emitting device 1I can cover the reflective structure 30 in the normal direction; Fluorescent structures 20 were observed, while reflective structures 30 were not observed. In this way, the width and length of the reflective structure 30 will be further reduced, so that the light emitting device 1I can have a smaller size.

Please refer to FIG. 10 , which is a schematic diagram of a light emitting device according to a tenth preferred embodiment of the present invention. The light emitting device 1J differs from other light emitting devices at least in that the fluorescent structure 20 of the light emitting device 1J can make the bottom surface 34 of the reflective structure 30 slope upward. Specifically, when the reflective structure 30 is formed, it is formed by solidifying a liquid manufacturing material at a relatively high temperature, and the solidification process will cause the volume of the reflective structure 30 to shrink, and the cooling process will also cause the reflective structure 30 and fluorescent light. The volume of structure 20 is reduced. Since the fluorescent structure 20 is attached to the reflective structure 30 , when the volume of the two shrinks, the bottom surface 34 of the reflective structure 30 will be inclined upward due to deformation.

The upward slope X of the bottom surface 34 is related to factors such as material properties and size differences between the fluorescent structure 20 and the reflective structure 30 , so the required upward slope X can be obtained by adjusting these factors. Preferably, the upward slope X is at least 3 microns.

The upward slope of the bottom surface 34 can provide the following beneficial effects: When the light emitting device 1J is bonded to a substrate (not shown), thermal energy is often applied to the light emitting device 1J and the substrate (for example, in the case of reflow process or eutectic bonding heat energy must be applied), and the heat energy will cause the reflective structure 30 and the fluorescent structure 20 to expand; if there is no upward inclination, the bottom surface 34 of the expanded reflective structure 30 may push the substrate, and then cause the light emitting device 1J to be lifted, thereby causing Bonding failed; however, the bottom surface 34 of the reflective structure 30 of the light emitting device 1J of the present embodiment does not push the substrate because the bottom surface 34 is inclined upward.

In the light-emitting device 1A-1J in the above-mentioned embodiments, the technical contents thereof should be applicable to each other, and are not limited to the embodiments themselves. For example, the lens array layer 203 of the light emitting device 1C, the substrate 40 of the light emitting device 1F, and the upwardly inclined bottom surface 34 of the light emitting device 1J can all be applied to light emitting devices of other embodiments (not shown). In addition, in the light-emitting device 1A-light-emitting device 1J, the fluorescent structure 20 can increase the fluorescent layer 201 and the light-transmitting layer 202 into multiples according to the design requirements, and adjust the stacking sequence appropriately, or add them to the fluorescent structure 20. Titanium dioxide (TiO ₂ ) and other filling materials, so that the overall best results can be obtained.

Furthermore, the technical content of the light emitting device 1A-the light emitting device 1J can also be applied to manufacture a light emitting device (monochromatic LED) 1K that emits monochromatic light. As shown in FIG. Instead, the transparent structure 20' is made of a transparent material, that is, the transparent structure 20' does not contain a fluorescent layer or a fluorescent material, so that the wavelength of the light emitted by the LED chip 10 will not be converted when passing through the transparent structure 20'. In this way, it can be used to make small-sized light-emitting devices of monochromatic light such as red light, green light, blue light, infrared light or ultraviolet light, which also have a small divergence angle, a small light output area to facilitate secondary lens design, small thermal resistance and Adjustable lighting angle and other benefits.

And because some applications require highly directional light sources, it is necessary to further reduce the divergence angle. As shown in FIG. 22B, when the side slope angle of the transparent structure 20' is zero (that is, becomes the vertical side 23'), a smaller divergence angle can be obtained. The divergence angle can be further reduced by increasing the height H of the reflective structure 30 . Preferably, the height H of the reflective structure 30 is not less than 0.1 times the length W of the LED chip 10 and not more than 5 times the length W of the LED chip 10 (ie, the aspect ratio is 0.1≦H/W≦5). Although the transparent structure 20' on the vertical side 23' will sacrifice the overall light output efficiency, the narrowed divergence angle can make the light energy more concentrated, resulting in an increase in the luminous flux per unit area (ie, illuminance) in a specific direction, thus complying with high-directional light sources Applications. Preferably, the transparent structure 20' is made of a transparent material with a low refractive index. The closer the refractive index is to 1, the better the effect on increasing the illuminance.

In addition, if a fluorescent layer 201' (as shown in FIG. 22D ) is disposed on the bottom of the transparent structure 20', it can further meet the application of high directivity white light source. For example, as shown in FIG. 22C, when the fluorescent material of the light-emitting device is evenly distributed in the transparent structure 20', light L will produce scattering (scattering) when encountering the fluorescent material, and the reflective structure 30 cannot be used to improve the directivity of light; therefore, Disposing the fluorescent layer 201 ′ on the bottom of the transparent structure 20 ′ (and can be stacked on the LED chip 10 ) can prevent light L from being scattered in the transparent structure 20 ′. For example, as shown in FIG. 22D , under the condition that there is no scattering in the transparent structure 20 ′, the light L with a large incident angle (large angle with the vertical direction) will be reflected by the reflective structure 30 many times, causing its light intensity to decay rapidly. And not easy to break away from the transparent structure 20' (because the light L is easy to reflect on the top surface of the transparent structure 20' and return to the transparent structure 20'); The light L is rarely reflected by the reflective structure 30 and easily escapes from the transparent structure 20'. In this way, the light emitting device 1K can screen out most of the light L with a large incident angle, so that the overall emitted light L has a smaller divergence angle and higher directivity.

The above-mentioned light emitting device 1K can also be a chip scale package light emitting device, that is, the transparent structure 20' is equal to or slightly larger than the LED chip 10 in length and width, and the reflective structure 30 is slightly larger than the LED chip 10. In this way, the light emitting device 1K can improve the disadvantage that the currently known light emitting devices cannot meet the chip scale package with a small divergence angle.

Next, a method for manufacturing a light-emitting device according to a preferred embodiment of the present invention will be described. This manufacturing method can manufacture the same or similar light-emitting device 1A-light-emitting device 1J of the above-mentioned embodiments, so the technical content of the manufacturing method is the same as that of the light-emitting device 1A. - The technical content of the light emitting device 1J may refer to each other. The manufacturing method may include three major stages: forming a fluorescent structure with an inverted tapered side; disposing the fluorescent structure on an LED chip to form a light-emitting structure; and coating the side of the light-emitting structure to form a light-emitting structure with Reflective structure with inverted tapered inner chamfer. The technical content of each stage is explained in sequence as follows.

The formation of the fluorescent structure 20 can be divided into indirect formation or direct formation. The indirect formation refers to: first forming a fluorescent film, and then dividing the fluorescent film into multiple fluorescent structures. Please refer to FIG. 11A to FIG. 11D , which are schematic diagrams of the steps of "forming a fluorescent film". As shown in FIG. 11A , an auxiliary material (such as a release film) 50 is provided first, and the auxiliary material 50 can also be placed on a support structure (such as a silicon substrate or a glass substrate, not shown).

As shown in FIG. 11B , the fluorescent layer 201 is then formed on the auxiliary material 50, which can be achieved by processes such as spray coating, printing or molding, that is, the manufacturing material of the fluorescent layer 201 After these processes are disposed on the auxiliary material 50 , the fluorescent layer 201 can be formed after the manufacturing material is cured. The method for forming the fluorescent layer disclosed in US patent applications with publication numbers US2010/0119839 and US2010/0123386 can also be applied to this embodiment, which can well control the thickness and uniformity of the fluorescent layer; the two US patent applications The technical content of this article is incorporated by reference in its entirety.

As shown in FIG. 11C , the transparent layer 202 is then formed on the fluorescent layer 201 by spraying, printing, molding or dispensing. If more than two light-transmitting layers 202 need to be formed, the spraying process is more suitable. As shown in FIG. 11D , after the transparent layer 202 is formed, the auxiliary material 50 can be removed to obtain a fluorescent film 200 composed of the transparent layer 202 and the fluorescent layer 201 . The fluorescent film 200 can correspond to the fluorescent structure 20 of the light-emitting device 1A (as shown in FIG. 1 ), and can also correspond to the fluorescent structure 20 of the light-emitting device 1G, the light-emitting device 1H, and the light-emitting device 1J (as shown in FIGS. 7 , 8 and 10 ). ), by turning the finished fluorescent film 200 upside down during cutting, it can correspond to the fluorescent structure 20 of the light emitting device 1B (as shown in FIG. 2 ).

By changing the formation order of the light-transmitting layer 202 and the fluorescent layer 201, different fluorescent films 200 can be obtained. For example, as shown in FIG. 12A to FIG. A fluorescent film 200 corresponding to the fluorescent structure 20 (as shown in FIG. 4 ) of the light emitting device 1D is formed on the auxiliary material 50 . As shown in Figure 14, only the fluorescent layer 201 is formed on the auxiliary material 50, so a fluorescent structure 20 corresponding to the light emitting device 1E, the light emitting device 1F and the light emitting device 1I can be formed (as shown in Figure 5, Figure 6 and Figure 9 ) of the fluorescent film 200.

As shown in FIG. 15 , after the fluorescent layer 201 is formed, a lens array layer 203 can be formed on the fluorescent layer 201 . The lens array layer 203 can be formed by molding, that is, the fluorescent layer 201 and the auxiliary material 50 are placed in a mold (not shown), and then the manufacturing material of the lens array layer 203 is injected into the mold, and the manufacturing material can be cured. A lens array layer 203 is formed. The fluorescent film 200 formed by the fluorescent layer 201 and the lens array layer 203 can correspond to the fluorescent structure 20 of the light emitting device 1C (as shown in FIG. 3 ).

After the various fluorescent films 200 are formed, the fluorescent film 200 can be divided into a plurality of parts with an inclined side by punching, and one of the parts is the fluorescent structure 20 .

Specifically, as shown in FIG. 16A and FIG. 16B, the fluorescent film 200 is first turned over and placed on another auxiliary material 50' with the bottom facing up, and then a punching cutter 60 punches the fluorescent film 200 from above. . Please refer to FIG. 16C , the punching tool 60 has a plurality of cutting edges 61 , and the plurality of cutting edges 61 are connected and arranged according to the shape of the fluorescent structure 20 , for example, arranged in a rectangle. Therefore, when the punching cutter 60 punches the fluorescent film 200 , as shown in FIG. 16D and FIG. 16E , the fluorescent film 200 will be divided into a plurality of fluorescent structures 20 ; that is, multiple fluorescent structures 20 can be formed by one punching. The bottom surfaces 22 of the plurality of fluorescent structures 20 are facing the cutting edge 61 of the punching tool 60 . In addition, as shown in FIG. 16F, if the die-cut fluorescent film 200 includes the lens array layer 203, the lens array layer 203 is placed on the auxiliary material 50'.

It can be seen that the die-cutting method can rapidly divide the fluorescent film 200 into a plurality of fluorescent structures 20 . In addition, the inclination angle of the inclined side 23 of the fluorescent structure 20 can also be controlled by several factors, such as adjusting the angle (or cross section) of the blade 61, the geometric dimensions of the fluorescent structure 20 and/or the material properties of the fluorescent film 200 and other factors. Therefore, when these factors are set in advance, the required inclined side 23 can be obtained.

In addition to punching, sawing, precision machining or micro machining can also be used to form the fluorescent film 200 into a plurality of fluorescent structures 20 . 17, a saw wheel or double angle milling cutter (dual angle milling cutter) cuts the fluorescent film 200 more than 70 times, so that the fluorescent film 200 is divided into a plurality of fluorescent structures 20; 22 is the cutting edge 71 towards the saw wheel or double angle milling cutter 70 . The inclination angle of the inclined side 23 of the fluorescent structure 20 can be controlled by the angle (or section) of the blade 71 . In microfabrication, steps such as barrier layer deposition, shape definition and etching can be used to form the fluorescent structure 20 .

The above method is to indirectly form the fluorescent structure 20 from the fluorescent film 200 , and the fluorescent structure 20 can be directly formed by molding or micro machining. Specifically, in the molding method, a mold (not shown) will be provided, and the shape of the mold cavity corresponds to the appearance of the fluorescent structure 20, and then the manufacturing material of the fluorescent structure 20 will be injected into the mold cavity, and after the manufacturing material is cured A fluorescent structure 20 may be formed. In the microfabrication method, the fluorescent structure 20 is formed by steps such as coating, exposure, development and/or etching. The methods of molding and micro-processing can also produce multiple fluorescent structures 20 simultaneously in batch production.

In addition to soft light-transmitting materials such as light-transmitting resin, brittle light-transmitting materials such as glass and ceramics can also be used to form the fluorescent structure 20 according to application requirements. Wherein, in the indirect method, methods such as sintering can be used to form a thin fluorescent plate first, and then a plurality of fluorescent structures 20 can be formed by methods such as sawing; cavity, and then sintered to directly form a plurality of fluorescent structures 20; and the manufacturing method of the fluorescent structure 20 can also be applied to the manufacturing of the transparent structure 20'. In addition, a plurality of transparent structures 20' can also be formed by sawing a transparent glass substrate or a transparent ceramic substrate directly.

Next, "formation of a light emitting structure" will be described. Please refer to FIG. 18A. First, a plurality of LED chips 10 are placed on another auxiliary material 50 "at intervals. The auxiliary material 50" can be UV release tape (UV release tape) or thermal release tape (thermal release tape). )Wait. In addition, the LED chip 10 can be pressed so that its electrode group 14 is embedded in the auxiliary material 50" without being exposed. If there is a substrate 40 under the LED chip 10 (as shown in FIG. 6 ), no auxiliary material is required. 50".

Please refer to FIG. 18B, and then place the fluorescent structure 20 on the upper surface 11 of the LED chip 10, and the inclined side 23 of the fluorescent structure 20 is exposed outside the upper surface 11; the fluorescent structure 20 can be attached to the LED chip by glue or adhesive tape 10 of the upper surface 11 . In this way, the fluorescent structure 20 and the LED chip 10 can form a light emitting structure.

Next, "formation of the reflective structure" will be described. The reflective structure 30 is formed by coating the side surface 13 of the LED chip 10 and the inclined side surface 23 of the fluorescent structure 20 together (that is, at the same time), and there are at least two specific methods: molding and dispensing. Please refer to FIG. 19, when molding, the fluorescent structure 20, the LED chip 10 and the auxiliary material 50" will be placed in a mold (not shown), and then the manufacturing material of the reflective structure 30 will be injected into the mold, and The side surface 13 of the LED chip 10 and the inclined side surface 23 of the fluorescent structure 20 are covered; when the manufacturing material is solidified, the reflective structure 30 can be formed. The reflective structure 30 in this way can cover all the inclined side surfaces 23 .

When dispensing, the above-mentioned mold is not needed. The manufacturing material of the reflective structure 30 will be directly poured onto the auxiliary material 50", and then the manufacturing material will gradually thicken on the auxiliary material 50", so as to cover the side 13 of the LED chip 10 and the inclined side 23 of the fluorescent structure 20, so The poured fabrication material does not exceed the top surface 21 of the fluorescent structure 20 . When the casting material is slightly reduced, the reflective structure 30 formed by curing will be as shown in FIGS. 7 and 8 .

After the reflective structure 30 is formed, as shown in FIG. Therefore, another cutting step (as shown in FIG. 21 ) can be taken to cut and separate the connected reflective structures 30 , so as to obtain mutually separated light-emitting devices 1A.

To sum up the above, the manufacturing method of the light-emitting device in this embodiment can manufacture various light-emitting devices with fluorescent structures with inclined sides, and the light-emitting devices can be small in size. In addition, the manufacturing method also has the characteristics that a large number of fluorescent structures can be produced in batches, and the reflective structure can be formed without a mold, so as to reduce costs and the like.

The above-mentioned embodiments are only used to illustrate the implementation of the present invention and explain the technical features of the present invention, and are not intended to limit the scope of protection of the present invention. Any changes or equivalence arrangements that can be easily accomplished by those skilled in the art fall within the scope of the present invention, and the protection scope of the present invention should be determined by the claims.

Claims (26)

1. A lighting device, characterized in that it comprises: An LED chip has an upper surface, a lower surface opposite to the upper surface, a side surface and an electrode group, the side surface is formed between the upper surface and the lower surface, and the electrode group is arranged on the lower surface; A fluorescent structure, arranged on the LED chip, has a top surface, a bottom surface opposite to the top surface, and a side surface formed between the top surface and the bottom surface, wherein the top surface is larger than the bottom surface, so that the side surface Presenting an inclined shape relative to the top surface and the bottom surface, the bottom surface is located on the upper surface of the LED chip; and A reflection structure covers the side of the LED chip and the side of the fluorescent structure. 2. The light emitting device according to claim 1, wherein the bottom surface of the fluorescent structure is pasted on the upper surface of the LED chip, and the bottom surface of the fluorescent structure is not smaller than the upper surface of the LED chip. 3. The light-emitting device according to claim 1, wherein the reflective structure is made of a material including a reflective resin or another material including a light-transmissible resin, the reflective structure The light transmissive resin contains reflective particles. 4. The light-emitting device according to claim 3, wherein the reflective resin is polyphthalamide, polycyclohexanedimethylene terephthalate or epoxy resin; the translucent resin is Silica gel; the reflective particles are titanium dioxide, boron nitride, silicon dioxide or aluminum oxide. 5 . The light-emitting device according to claim 3 , wherein the light-transmitting resin is a low-reflectance silica gel and contains reflective particles. 6. The light-emitting device according to claim 1, wherein the reflective structure has an inner side surface attached to the side surface of the LED chip and an inner inclined surface attached to the inclined side surface of the fluorescent structure . 7. The light emitting device according to any one of claims 1-6, wherein the fluorescent structure is a single-layer fluorescent structure. 8. The light-emitting device according to any one of claims 1-6, wherein the fluorescent structure comprises a fluorescent layer and at least one transparent layer, and the at least one transparent layer is formed on the fluorescent layer . 9. The light emitting device as claimed in claim 8, wherein the refractive index of the at least one transparent layer is smaller than the refractive index of the fluorescent layer. 10. The light emitting device according to any one of claims 1-6, wherein the fluorescent structure comprises a fluorescent layer and a lens array layer, and the lens array layer is formed on the fluorescent layer. 11. The light emitting device according to any one of claims 1-6, wherein the fluorescent structure comprises a fluorescent layer and a transparent layer, and the transparent layer is formed under the fluorescent layer. 12. The light emitting device according to any one of claims 1-6, wherein a bottom surface of the reflective structure is inclined upward. 13. The light emitting device according to any one of claims 1-6, wherein along a normal direction of the top surface of the fluorescent structure, the top surface of the fluorescent structure shields the reflective structure. 14. The light-emitting device according to any one of claims 1-6, wherein a top surface of the fluorescent structure is higher than a top surface of the reflective structure, and a side surface of the fluorescent structure is partially exposed on the reflective structure. 15. The light emitting device according to any one of claims 1-6, wherein a top surface of the reflective structure is inclined downward from a top surface of the fluorescent structure. 16. The light-emitting device according to any one of claims 1-6, further comprising a substrate, the LED chip and the reflective structure are disposed on the substrate, and the LED chip is electrically connected to the substrate . 17. The light-emitting device according to any one of claims 1-6, wherein the reflective structure has a width and a length, the width is not greater than 2.0 mm, and the length is not greater than 3.0 mm. 18. A method for manufacturing a light-emitting device, comprising: forming a fluorescent structure with an inverted tapered side; disposing the fluorescent structure on an LED chip to form a light emitting structure; and The side surface of the light-emitting structure is covered to form a reflective structure with an inverted tapered inner surface. 19. The manufacturing method of a light emitting device according to claim 18, characterized in that: The step of forming the fluorescent structure is to form a fluorescent structure having a top surface, a bottom surface and an inclined side surface, wherein the top surface is larger than the bottom surface, and the inclined side surface is formed between the top surface and the bottom surface; The step of forming the light emitting structure is to place the fluorescent structure on an upper surface of the LED chip, so that the inclined side surface of the fluorescent structure is exposed outside the upper surface; and The step of forming the reflective structure is to cover one side of the LED chip and the inclined side of the fluorescent structure together. 20. The manufacturing method of a light-emitting device as claimed in claim 19, wherein the step of forming the fluorescent structure is to form the inclined side by punching, molding, sawing, precision cutting or micromachining. 21. The manufacturing method of a light-emitting device according to claim 19, wherein the step of forming the fluorescent structure further comprises: punching a fluorescent film so that the fluorescent film is divided into a plurality of parts with an inclined side, and One of the moieties is the fluorescent structure. 22. The manufacturing method of a light-emitting device according to claim 21, wherein the fluorescent film is a single-layer fluorescent film or comprises a fluorescent layer and a light-transmitting layer, and the fluorescent layer is formed on the light-transmitting layer or under the light-transmitting layer. 23. The method of manufacturing a light-emitting device according to any one of claims 18-22, wherein the fluorescent structure is pasted to the LED chip. 24. A light emitting device, characterized in that it comprises: An LED chip has an upper surface, a lower surface opposite to the upper surface, a side surface and an electrode group, the side surface is formed between the upper surface and the lower surface, and the electrode group is arranged on the lower surface; A transparent structure disposed on the LED chip, which has a top surface, a bottom surface opposite to the top surface, and a side surface formed between the top surface and the bottom surface, and the size of the top surface is greater than or equal to that of the bottom surface size, the bottom surface is located on the upper surface of the LED chip; and a reflective structure covering the side of the LED chip and the side of the transparent structure, Wherein, a height of the reflective structure is not less than 0.1 times of a length of the LED chip and not more than 5 times of the length of the LED chip. 25. The light emitting device as claimed in claim 24, wherein the transparent structure further comprises a filling material. 26. The light emitting device as claimed in claim 24, wherein a bottom of the transparent structure further comprises a fluorescent layer.