CN106568384A - Size measurement method for large-chamfer quartz wafer - Google Patents
Size measurement method for large-chamfer quartz wafer Download PDFInfo
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- CN106568384A CN106568384A CN201710030297.XA CN201710030297A CN106568384A CN 106568384 A CN106568384 A CN 106568384A CN 201710030297 A CN201710030297 A CN 201710030297A CN 106568384 A CN106568384 A CN 106568384A
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- quartz wafer
- big chamfering
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01B—MEASURING LENGTH, THICKNESS OR SIMILAR LINEAR DIMENSIONS; MEASURING ANGLES; MEASURING AREAS; MEASURING IRREGULARITIES OF SURFACES OR CONTOURS
- G01B11/00—Measuring arrangements characterised by the use of optical techniques
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- General Physics & Mathematics (AREA)
- Image Processing (AREA)
- Testing Or Measuring Of Semiconductors Or The Like (AREA)
- Length Measuring Devices By Optical Means (AREA)
Abstract
The present invention discloses a size measurement method for a large-chamfer quartz wafer. According to the method, a processor processes a black-white image of the large-chamfer quartz wafer through an image processing algorithm; the edge contour of the large-chamfer quartz wafer is extracted from the black-white image; fitting is performed through using the edge contour, so that four straight line segments and four arcs can be obtained, and the arcs are removed, and the minimum circumscribed rectangle of the four straight line segments is obtained; the length and width of the minimum circumscribed rectangle are calculated; and the length and width of the large-chamfer quartz wafer are the length and width of the minimum circumscribed rectangle. According to the method of the invention, the contrast of the image is improved, so that the size measurement at an algorithm level can be benefitted; fitting is performed based on the combination of the information of a chamfer portion and effective information in the algorithm, so that the new straight lines can be obtained; the circumscribed rectangle is obtained through fitting by means of the four straight lines, and therefore, the precision of the algorithm can be improved; and the precision can be improved to 0.5 microns.
Description
Technical field
The present invention relates to a kind of big chamfering quartz wafer dimension measurement method.
Background technology
At present, more big chamfering quartz wafer dimensional measurement, but specialty of the method to survey crew are carried out using sciagraphy
Property have high demands, subjectivity is strong, and the quartz wafer quantity of information of big chamfering is less, causes measurement efficiency low and precision is low；In addition, application
Number for 201510470879.0 patent application " a kind of measuring method of quartz wafer size " adopt dark field measurement method lack
Falling into has two：One is that honed big chamfering chip polarization characteristic is different from original common wafer polarization characteristic, and effect differs completely
Sample, two is that effective information is very few in the case of the big chamfering of chip, and the straight line of the four edges for correspondence chip for finding no longer is four
The most long straight line of bar, and the most long straight line for extracting is not necessarily the straight line of needs, causes certainty of measurement low, measurement error is big.
The content of the invention
The purpose of the present invention is that big chamfering quartz wafer dimensional measurement precision is low, efficiency is low and error is big to solve at present
Technical problem.
In order to solve above-mentioned technical problem, the present invention provides a kind of big chamfering quartz wafer dimension measurement method, including such as
Lower measurement apparatus：
Light source：For illuminating the big chamfering quartz wafer；
Second camera：For shooting the image of the big chamfering quartz wafer；
Telecentric lens：For optical imagery；
The polarizer：For the incident illumination of the light source to be changed into into line polarized light；
Analyzer：For the line polarized light of the detection after the big chamfering quartz wafer, wherein, in the big chamfering stone
English chip occlusion area does not have the line polarized light to enter the second camera, the image that the region shoots in the second camera
It is middle to be presented completely black, fully enter second phase in line polarized light described in the region blocked without the big chamfering quartz wafer
Machine, the region is presented complete white in the image that the second camera shoots, so that the profile of the big chamfering quartz wafer exists
The high-contrast image of black and white is formed in the second camera；
Processor：It is described to obtain for processing the black white image of the described big chamfering quartz wafer that the second camera shoots
The size of the big chamfering quartz wafer；
Including following measuring process：
（1）The light source, the polarizer, big chamfering quartz wafer, analyzer, telecentric lens and second camera are placed in from the bottom up
In same optical axis；
（2）The angle of the big chamfering quartz wafer is adjusted by first camera, the long side side of the big chamfering quartz wafer is made
To the polarization direction with the polarizer into angle C；Angle C is 45 ° or 135 °；
（3）The angle of the polarizer is adjusted, the polarization direction of the polarizer is vibrated with the incident light vector of the light source
Direction is into included angle A；The angle of the analyzer is adjusted, the polarization direction of the analyzer and the incident light vector of the light source is made
Direction of vibration is into included angle B；Included angle A and B differ 0 ° or 180 °；
（4）Open the light source and second camera, shoot the black white image of the big chamfering quartz wafer, and by the artwork master
As sending to the processor；
（5）The processor is processed the black white image by image processing algorithm, is extracted from the black white image
Go out the edge contour of the big chamfering quartz wafer, four straightways and four circular arcs obtained by edge contour fitting,
The circular arc is rejected, the minimum enclosed rectangle of four straightways is asked for, the length and width of the minimum enclosed rectangle, institute is calculated
State the length of big chamfering quartz wafer and the wide length and width for being respectively the minimum enclosed rectangle.
Further, step（5）Described in image processing algorithm include following process step：
S1 selects the big chamfering quartz wafer region from binaryzation in the black white image；
S2 chooses the edge of the black white image as region of interest ROI；
S3 extracts the edge contour of the black white image, and fitting obtains straightway and circular arc, and the circular arc is the big chamfering
The chamfering of quartz wafer；
If the length of the S4 straightways is less than self-defining predetermined threshold value, it is considered as distracter and is rejected；
The circular arc that S5 deletion fittings are obtained；
S6 is analyzed to the straightway, extracts nose section as Line 1 f1 (x)=k1x+c1；
S7 finds the parallel lines of Line 1 in remaining straightway, chooses most long No. 2 lines of conduct；
S8 finds the vertical line of Line 1 in remaining line segment, chooses most long No. 3 lines of conduct；
S9 finds the parallel lines of No. 3 lines in remaining line segment, chooses most long No. 4 lines of conduct；
S10 comes because Line 1 f1 (x)=k1x+c1 is fitted, and the partial information of chamfering has also assisted in the process of fitting
In, in order to filter the information of the part, to fit come straight line and original information do residual error f (x1, x2, x3...xn)=
F11 (x1, x2 ... xn)-f1 (x1, x2 ... xn), wherein f11 (x1, x2 ... xn) sit for the edge contour that step S3 is obtained
Mark, and f (x1, x2 ... xn) it is to fit the rectilinear coordinates come；One threshold value is set, if residual error is more than the threshold value, rejecting should
Content, on the contrary be then considered effective information, according to effective information using method of least square fit again Line 1 f111 (x)=
k111x+c111；
S11 repeat steps S10, fit again 2,3, No. 4 lines；
S12 asks for fitting the minimum enclosed rectangle of 4 straightways for coming, and the long side of the minimum enclosed rectangle is fallen greatly for described
The length of angle quartz wafer, the minor face of the minimum enclosed rectangle is the width of the big chamfering quartz wafer.
The present invention is relative to the beneficial effect of prior art：
First improves picture contrast, contributes to the dimensional measurement of algorithm aspect；Second in the algorithm by the information of chamfered part
Combined with effective information and fitted new straight line, four fitting a straight line boundary rectangles are recycled, so as to improve arithmetic accuracy；The
Three, existing sciagraphy dimensional measurement precision is 5 microns, and precision can be mentioned 0.5 micron by the present invention.
Description of the drawings
Fig. 1 is the flow chart of image processing algorithm of the present invention；
Fig. 2 is that binaryzation selects quartz wafer area schematic；
Fig. 3 is selection edge as area-of-interest schematic diagram；
Fig. 4 is to extract edge contour, and fitting obtains straightway and circular arc schematic diagram；
Fig. 5 obtains the line of shortest length section schematic diagram in straightway for deletion fitting；
The circular arc schematic diagram that Fig. 6 is obtained for deletion fitting.
Specific embodiment
Presently in connection with drawings and Examples, the present invention is further detailed explanation.These accompanying drawings are simplified signal
Figure, only illustrates in a schematic way the basic structure of the present invention, therefore it only shows the composition relevant with the present invention, and it should not be managed
Solve as limitation of the present invention.
As shown in figure 1, the big chamfering quartz wafer dimension measurement method of the present invention, including following measurement apparatus：
Light source：For illuminating the big chamfering quartz wafer；
Second camera：For shooting the image of the big chamfering quartz wafer；
Telecentric lens：For optical imagery；
The polarizer：For the incident illumination of the light source to be changed into into line polarized light；
Analyzer：For the line polarized light of the detection after the big chamfering quartz wafer, wherein, in the big chamfering stone
English chip occlusion area does not have the line polarized light to enter the second camera, the image that the region shoots in the second camera
It is middle to be presented completely black, fully enter second phase in line polarized light described in the region blocked without the big chamfering quartz wafer
Machine, the region is presented complete white in the image that the second camera shoots, so that the profile of the big chamfering quartz wafer exists
The high-contrast image of black and white is formed in the second camera；
Processor：It is described to obtain for processing the black white image of the described big chamfering quartz wafer that the second camera shoots
The size of the big chamfering quartz wafer；
Including following measuring process：
（1）The light source, the polarizer, big chamfering quartz wafer, analyzer, telecentric lens and second camera are placed in from the bottom up
In same optical axis；
（2）The angle of the big chamfering quartz wafer is adjusted by first camera, the long side side of the big chamfering quartz wafer is made
To the polarization direction with the polarizer into angle C；Angle C is 45 ° or 135 °；
（3）The angle of the polarizer is adjusted, the polarization direction of the polarizer is vibrated with the incident light vector of the light source
Direction is into included angle A；The angle of the analyzer is adjusted, the polarization direction of the analyzer and the incident light vector of the light source is made
Direction of vibration is into included angle B；Included angle A and B differ 0 ° or 180 °；
（4）Open the light source and second camera, shoot the black white image of the big chamfering quartz wafer, and by the artwork master
As sending to the processor；
（5）The processor is processed the black white image by image processing algorithm, is extracted from the black white image
Go out the edge contour of the big chamfering quartz wafer, four straightways and four circular arcs obtained by edge contour fitting,
The circular arc is rejected, the minimum enclosed rectangle of four straightways is asked for, the length and width of the minimum enclosed rectangle, institute is calculated
State the length of big chamfering quartz wafer and the wide length and width for being respectively the minimum enclosed rectangle.
Preferably, as shown in figure 1, step（5）Described in image processing algorithm include following process step：
S1 selects the big chamfering quartz wafer region from binaryzation in the black white image, as shown in Figure 2；
S2 chooses the edge of the black white image as region of interest ROI, as shown in Figure 3；
S3 extracts the edge contour of the black white image, and fitting obtains straightway and circular arc, and the circular arc is the big chamfering
The chamfering of quartz wafer, as shown in Figure 4；
If the length of S4 straightways is less than self-defining predetermined threshold value, it is considered as distracter and is rejected, as shown in Figure 5；
The circular arc that S5 deletion fittings are obtained, as shown in Figure 6；
S6 is analyzed to the straightway, extracts nose section as Line 1 f1 (x)=k1x+c1；
S7 finds the parallel lines of Line 1 in remaining straightway, chooses most long No. 2 lines of conduct；
S8 finds the vertical line of Line 1 in remaining line segment, chooses most long No. 3 lines of conduct；
S9 finds the parallel lines of No. 3 lines in remaining line segment, chooses most long No. 4 lines of conduct；
S10 comes because Line 1 f1 (x)=k1x+c1 is fitted, and the partial information of chamfering has also assisted in the process of fitting
In, in order to filter the information of the part, to fit come straight line and original information do residual error f (x1, x2, x3...xn)=
F11 (x1, x2 ... xn)-f1 (x1, x2 ... xn), wherein f11 (x1, x2 ... xn) sit for the edge contour that step S3 is obtained
Mark, and f (x1, x2 ... xn) it is to fit the rectilinear coordinates come；One threshold value is set, if residual error is more than the threshold value, rejecting should
Content, on the contrary be then considered effective information, according to effective information using method of least square fit again Line 1 f111 (x)=
k111x+c111；
S11 repeat steps S10, fit again 2,3, No. 4 lines；
S12 asks for fitting the minimum enclosed rectangle of 4 straightways for coming, and the long side of the minimum enclosed rectangle is fallen greatly for described
The length of angle quartz wafer, the minor face of the minimum enclosed rectangle is the width of the big chamfering quartz wafer.
With the above-mentioned desirable embodiment according to the present invention as enlightenment, by above-mentioned description, relevant staff is complete
Entirely various change and modification can be carried out in the range of without departing from this invention technological thought.The technology of this invention
Property scope is not limited to the content in description, it is necessary to its technical scope is determined according to right.
Claims (2)
1. big chamfering quartz wafer dimension measurement method, it is characterised in that including following measurement apparatus：
Light source：For illuminating the big chamfering quartz wafer；
Second camera：For shooting the image of the big chamfering quartz wafer；
Telecentric lens：For optical imagery；
The polarizer：For the incident illumination of the light source to be changed into into line polarized light；
Analyzer：For the line polarized light of the detection after the big chamfering quartz wafer, wherein, in the big chamfering stone
English chip occlusion area does not have the line polarized light to enter the second camera, the image that the region shoots in the second camera
It is middle to be presented completely black, fully enter second phase in line polarized light described in the region blocked without the big chamfering quartz wafer
Machine, the region is presented complete white in the image that the second camera shoots, so that the profile of the big chamfering quartz wafer exists
The high-contrast image of black and white is formed in the second camera；
Processor：It is described to obtain for processing the black white image of the described big chamfering quartz wafer that the second camera shoots
The size of the big chamfering quartz wafer；
Including following measuring process：
（1）The light source, the polarizer, big chamfering quartz wafer, analyzer, telecentric lens and second camera are placed in from the bottom up
In same optical axis；
（2）The angle of the big chamfering quartz wafer is adjusted by first camera, the long side side of the big chamfering quartz wafer is made
To the polarization direction with the polarizer into angle C；Angle C is 45 ° or 135 °；
（3）The angle of the polarizer is adjusted, the polarization direction of the polarizer is vibrated with the incident light vector of the light source
Direction is into included angle A；The angle of the analyzer is adjusted, the polarization direction of the analyzer and the incident light vector of the light source is made
Direction of vibration is into included angle B；Included angle A and B differ 0 ° or 180 °；
（4）Open the light source and second camera, shoot the black white image of the big chamfering quartz wafer, and by the artwork master
As sending to the processor；
（5）The processor is processed the black white image by image processing algorithm, is extracted from the black white image
Go out the edge contour of the big chamfering quartz wafer, four straightways and four circular arcs obtained by edge contour fitting,
The circular arc is rejected, the minimum enclosed rectangle of four straightways is asked for, the length and width of the minimum enclosed rectangle, institute is calculated
State the length of big chamfering quartz wafer and the wide length and width for being respectively the minimum enclosed rectangle.
2. big chamfering quartz wafer dimension measurement method according to claim 1, it is characterised in that step（5）Described in
Image processing algorithm includes following process step：
S1 selects the big chamfering quartz wafer region from binaryzation in the black white image；
S2 chooses the edge of the black white image as region of interest ROI；
S3 extracts the edge contour of the black white image, and fitting obtains straightway and circular arc, and the circular arc is the big chamfering
The chamfering of quartz wafer；
If the length of the S4 straightways is less than self-defining predetermined threshold value, it is considered as distracter and is rejected；
The circular arc that S5 deletion fittings are obtained；
S6 is analyzed to the straightway, extracts nose section as Line 1 f1 (x)=k1x+c1；
S7 finds the parallel lines of Line 1 in remaining straightway, chooses most long No. 2 lines of conduct；
S8 finds the vertical line of Line 1 in remaining line segment, chooses most long No. 3 lines of conduct；
S9 finds the parallel lines of No. 3 lines in remaining line segment, chooses most long No. 4 lines of conduct；
S10 comes because Line 1 f1 (x)=k1x+c1 is fitted, and the partial information of chamfering has also assisted in the process of fitting
In, in order to filter the information of the part, to fit come straight line and original information do residual error f (x1, x2, x3...xn)=
F11 (x1, x2 ... xn)-f1 (x1, x2 ... xn), wherein f11 (x1, x2 ... xn) sit for the edge contour that step S3 is obtained
Mark, and f (x1, x2 ... xn) it is to fit the rectilinear coordinates come；One threshold value is set, if residual error is more than the threshold value, rejecting should
Content, on the contrary be then considered effective information, according to effective information using method of least square fit again Line 1 f111 (x)=
k111x+c111；
S11 repeat steps S10, fit again 2,3, No. 4 lines；
S12 asks for fitting the minimum enclosed rectangle of 4 straightways for coming, and the long side of the minimum enclosed rectangle is fallen greatly for described
The length of angle quartz wafer, the minor face of the minimum enclosed rectangle is the width of the big chamfering quartz wafer.
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Cited By (9)
| Publication number | Priority date | Publication date | Assignee | Title |
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| CN107490342A (en) * | 2017-06-30 | 2017-12-19 | 广东工业大学 | A kind of cell phone appearance detection method based on single binocular vision |
| CN108050934A (en) * | 2017-12-25 | 2018-05-18 | 武汉比天科技有限责任公司 | A kind of vision perpendicular positioning method with chamfering workpiece |
| CN108195319A (en) * | 2017-12-25 | 2018-06-22 | 武汉比天科技有限责任公司 | A kind of vision sloped position method with chamfering workpiece |
| CN112017232A (en) * | 2020-08-31 | 2020-12-01 | 浙江水晶光电科技股份有限公司 | Method, device and equipment for positioning circular pattern in image |
| CN112129244A (en) * | 2020-09-21 | 2020-12-25 | 北京石晶光电科技股份有限公司 | Wafer chamfering detection method |
| CN112595233A (en) * | 2020-12-15 | 2021-04-02 | 杭州大和热磁电子有限公司 | Quartz product automatic checkout device |
| CN113432543A (en) * | 2021-06-18 | 2021-09-24 | 浙江大学台州研究院 | Method for measuring diameter size of edge part |
| CN114594664A (en) * | 2022-05-09 | 2022-06-07 | 武汉精立电子技术有限公司 | Method, system and equipment for optimizing wafer scanning path and wafer detection method |
| CN112683323B (en) * | 2020-12-27 | 2024-01-12 | 富联裕展科技(深圳)有限公司 | Detection device, control system and control method |
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| CN107490342A (en) * | 2017-06-30 | 2017-12-19 | 广东工业大学 | A kind of cell phone appearance detection method based on single binocular vision |
| CN108050934A (en) * | 2017-12-25 | 2018-05-18 | 武汉比天科技有限责任公司 | A kind of vision perpendicular positioning method with chamfering workpiece |
| CN108195319A (en) * | 2017-12-25 | 2018-06-22 | 武汉比天科技有限责任公司 | A kind of vision sloped position method with chamfering workpiece |
| CN108050934B (en) * | 2017-12-25 | 2020-07-14 | 武汉比天科技有限责任公司 | Visual vertical positioning method for workpiece with chamfer |
| CN108195319B (en) * | 2017-12-25 | 2020-07-14 | 武汉比天科技有限责任公司 | Visual oblique positioning method for workpiece with chamfer |
| CN112017232B (en) * | 2020-08-31 | 2024-03-15 | 浙江水晶光电科技股份有限公司 | Positioning method, device and equipment for circular patterns in image |
| CN112017232A (en) * | 2020-08-31 | 2020-12-01 | 浙江水晶光电科技股份有限公司 | Method, device and equipment for positioning circular pattern in image |
| CN112129244A (en) * | 2020-09-21 | 2020-12-25 | 北京石晶光电科技股份有限公司 | Wafer chamfering detection method |
| CN112595233A (en) * | 2020-12-15 | 2021-04-02 | 杭州大和热磁电子有限公司 | Quartz product automatic checkout device |
| CN112683323B (en) * | 2020-12-27 | 2024-01-12 | 富联裕展科技(深圳)有限公司 | Detection device, control system and control method |
| CN113432543A (en) * | 2021-06-18 | 2021-09-24 | 浙江大学台州研究院 | Method for measuring diameter size of edge part |
| CN114594664A (en) * | 2022-05-09 | 2022-06-07 | 武汉精立电子技术有限公司 | Method, system and equipment for optimizing wafer scanning path and wafer detection method |
| CN114594664B (en) * | 2022-05-09 | 2022-08-16 | 武汉精立电子技术有限公司 | Method, system and equipment for optimizing wafer scanning path and wafer detection method |
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Application publication date: 20170419 |