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CN106558500B - Semiconductor device including fin structure and method of manufacturing the same - Google Patents

Semiconductor device including fin structure and method of manufacturing the same Download PDF

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Publication number
CN106558500B
CN106558500B CN201510852268.2A CN201510852268A CN106558500B CN 106558500 B CN106558500 B CN 106558500B CN 201510852268 A CN201510852268 A CN 201510852268A CN 106558500 B CN106558500 B CN 106558500B
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level
channel region
layer
fin
insulating layer
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CN106558500A (en
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赵元舜
曹志彬
陈豪育
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Taiwan Semiconductor Manufacturing Co TSMC Ltd
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Taiwan Semiconductor Manufacturing Co TSMC Ltd
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
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    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate
    • H01L29/785—Field effect transistors with field effect produced by an insulated gate having a channel with a horizontal current flow in a vertical sidewall of a semiconductor body, e.g. FinFET, MuGFET
    • H01L29/7853—Field effect transistors with field effect produced by an insulated gate having a channel with a horizontal current flow in a vertical sidewall of a semiconductor body, e.g. FinFET, MuGFET the body having a non-rectangular crossection
    • H01L29/7854—Field effect transistors with field effect produced by an insulated gate having a channel with a horizontal current flow in a vertical sidewall of a semiconductor body, e.g. FinFET, MuGFET the body having a non-rectangular crossection with rounded corners
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
    • H01L27/08—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind
    • H01L27/085—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only
    • H01L27/088—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only the components being field-effect transistors with insulated gate
    • H01L27/0886—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only the components being field-effect transistors with insulated gate including transistors with a horizontal current flow in a vertical sidewall of a semiconductor body, e.g. FinFET, MuGFET
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    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
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    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
    • H01L29/0603—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions
    • H01L29/0642—Isolation within the component, i.e. internal isolation
    • H01L29/0649—Dielectric regions, e.g. SiO2 regions, air gaps
    • H01L29/0653—Dielectric regions, e.g. SiO2 regions, air gaps adjoining the input or output region of a field-effect device, e.g. the source or drain region
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    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
    • H01L29/10—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions with semiconductor regions connected to an electrode not carrying current to be rectified, amplified or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
    • H01L29/1025—Channel region of field-effect devices
    • H01L29/1029—Channel region of field-effect devices of field-effect transistors
    • H01L29/1033—Channel region of field-effect devices of field-effect transistors with insulated gate, e.g. characterised by the length, the width, the geometric contour or the doping structure
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    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
    • H01L29/10—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions with semiconductor regions connected to an electrode not carrying current to be rectified, amplified or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
    • H01L29/1025—Channel region of field-effect devices
    • H01L29/1029—Channel region of field-effect devices of field-effect transistors
    • H01L29/1033—Channel region of field-effect devices of field-effect transistors with insulated gate, e.g. characterised by the length, the width, the geometric contour or the doping structure
    • H01L29/1037—Channel region of field-effect devices of field-effect transistors with insulated gate, e.g. characterised by the length, the width, the geometric contour or the doping structure and non-planar channel
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    • H01L29/40—Electrodes ; Multistep manufacturing processes therefor
    • H01L29/43—Electrodes ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
    • H01L29/49—Metal-insulator-semiconductor electrodes, e.g. gates of MOSFET
    • H01L29/4966—Metal-insulator-semiconductor electrodes, e.g. gates of MOSFET the conductor material next to the insulator being a composite material, e.g. organic material, TiN, MoSi2
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    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/66007—Multistep manufacturing processes
    • H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
    • H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
    • H01L29/66409—Unipolar field-effect transistors
    • H01L29/66477—Unipolar field-effect transistors with an insulated gate, i.e. MISFET
    • H01L29/66787—Unipolar field-effect transistors with an insulated gate, i.e. MISFET with a gate at the side of the channel
    • H01L29/66795—Unipolar field-effect transistors with an insulated gate, i.e. MISFET with a gate at the side of the channel with a horizontal current flow in a vertical sidewall of a semiconductor body, e.g. FinFET, MuGFET
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
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    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate
    • H01L29/785—Field effect transistors with field effect produced by an insulated gate having a channel with a horizontal current flow in a vertical sidewall of a semiconductor body, e.g. FinFET, MuGFET
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    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate
    • H01L29/785—Field effect transistors with field effect produced by an insulated gate having a channel with a horizontal current flow in a vertical sidewall of a semiconductor body, e.g. FinFET, MuGFET
    • H01L29/7851—Field effect transistors with field effect produced by an insulated gate having a channel with a horizontal current flow in a vertical sidewall of a semiconductor body, e.g. FinFET, MuGFET with the body tied to the substrate

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  • Condensed Matter Physics & Semiconductors (AREA)
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  • Insulated Gate Type Field-Effect Transistor (AREA)
  • Thin Film Transistor (AREA)

Abstract

The invention relates to a semiconductor device comprising a fin structure and a manufacturing method thereof. A method for manufacturing a semiconductor device according to an embodiment includes forming a fin structure over a substrate. The fin structure has a top surface and a side surface, and the top surface is positioned at a height H0 measured from the substrate. An insulating layer is formed over the fin structure and the substrate. In the first recess, the insulating layer is recessed to a height T1 from the substrate such that an upper portion of the fin structure is exposed from the insulating layer. A semiconductor layer is formed over the exposed upper portion. After forming the semiconductor layer, in a second recess, the insulating layer is recessed to a height T2 from the substrate such that a middle portion of the fin structure is exposed from the insulating layer. Forming a gate structure over the upper portion of the fin structure having the semiconductor layer and the exposed middle portion.

Description

Semiconductor device including fin structure and method of manufacturing the same
Technical Field
The present invention relates to semiconductor integrated circuits, and more particularly, to a semiconductor device having a fin structure and a manufacturing process thereof.
Background
As the semiconductor industry has evolved into nanotechnology process nodes seeking higher device densities, higher performance, and lower costs, challenges from both manufacturing and design issues have led to the development of three-dimensional designs, such as fin field effect transistors (finfets). Finfet devices typically include semiconductor fins having high aspect ratios and having channel and source/drain regions of semiconductor transistors formed therein. Gates are formed over and along the sides of the fin devices (e.g., wrapped around), thereby taking advantage of the increased surface area of the channel and source/drain regions to produce faster, more reliable, and better controlled semiconductor transistor devices. In a fin FET device, an upper portion of the fin structure acts as a channel while a lower portion of the fin structure acts as a well.
Disclosure of Invention
The present invention provides a method for manufacturing a semiconductor device, comprising:
forming a fin structure over a substrate, the fin structure having a top surface and side surfaces, the top surface being positioned at a height H0 measured from the substrate;
forming an insulating layer over the fin structure and the substrate;
first recessing the insulating layer to a height T1 measured from the substrate such that an upper portion of the fin structure is exposed from the insulating layer;
forming a semiconductor layer over the exposed upper portion of the fin structure;
after forming the semiconductor layer, second recessing the insulating layer to a height T2 measured from the substrate such that a middle portion of the fin structure is exposed from the insulating layer; and
forming a gate structure over the upper portion of the fin structure having the semiconductor layer and the exposed middle portion.
Drawings
The invention is best understood from the following detailed description when read with the accompanying drawing figures. It is emphasized that, in accordance with the standard practice in the industry, various features are not drawn to scale and are used for illustrative purposes only. In fact, the dimensions of the various features may be arbitrarily increased or reduced for clarity of discussion.
Fig. 1-6 show exemplary cross-sectional views illustrating a sequential process for fabricating a fin FET device, according to one embodiment of the invention.
Fig. 7-9 show exemplary cross-sectional views illustrating a sequential process for fabricating a fin FET device, according to another embodiment of the invention.
Fig. 10-12 are exemplary cross-sectional views of fin-FET devices according to various embodiments of the invention.
Detailed Description
It is to be understood that the following disclosure provides many different embodiments, or examples, for implementing different features of the invention. Specific embodiments or examples of components and arrangements are described below to simplify the present disclosure. Of course, these are merely examples and are not intended to be limiting. For example, the dimensions of the elements are not limited to the disclosed ranges or values, but may depend on the process conditions and/or desired properties of the device. Furthermore, the formation of a first feature over or on a second feature in the description that follows may include embodiments in which the first and second features are formed in direct contact, and may also include embodiments in which additional features may be formed interposing the first and second features, such that the first and second features may not be in direct contact. Various features may be arbitrarily drawn in different scales for simplicity and clarity.
Furthermore, spatially relative terms (e.g., "under … …," "under … …," "below," "above … …," "upper," and the like) may be used herein to describe one element or feature's relationship to another element or feature as illustrated in the figures, for ease of description. The spatially relative terms are intended to encompass different orientations of the device in use or operation in addition to the orientation depicted in the figures. The device may be otherwise oriented (rotated 90 degrees or at other orientations) and the spatially relative descriptors used herein interpreted accordingly. Additionally, the term "made from … …" can mean "including" or "consisting of … …".
Fig. 1-6 show exemplary cross-sectional views illustrating a sequential process for fabricating a fin FET device, according to one embodiment of the invention. It should be understood that for additional embodiments of the method, additional operations may be provided before, during, or after the processes shown in fig. 1-6, and some of the operations described below may be replaced or eliminated. The order of the operations/processes may be interchanged.
As shown in fig. 1, by, for example, a thermal oxidation process and/or chemical vapor phaseA deposition (CVD) process forms a masking layer 100 over the substrate 10. In one embodiment, substrate 10 is, for example, an approximately 5 x 10 impurity concentration14cm-3And about 5X 1015cm-3A p-type silicon substrate in the range of (1). In other embodiments, substrate 10 has an impurity concentration of about 5 × 1014cm-3And about 5X 1015cm-3An n-type silicon substrate in the range of (1). Alternatively, the substrate 10 may include: another base semiconductor, such as germanium; compound semiconductors including IV-IV compound semiconductors (e.g., SiC and SiGe), UI-V compound semiconductors (e.g., GaAs, GaP, GaN, InP, InAs, InSb, GaAsP, AlGaN, AlInAs, AlGaAs, GaInAs, GaInP, and/or GaInAsP); or a combination thereof. In one embodiment, the substrate 10 is a silicon layer of an SOI (silicon on insulator) substrate. When an SOI substrate is used, the fin structures may protrude from a silicon layer of the SOI substrate or may protrude from an insulator layer of the SOI substrate. In the latter case, the silicon layer of the SOI substrate is used to form the fin structure. An amorphous substrate (e.g., amorphous Si or amorphous SiC) or an insulating material (e.g., silicon oxide) may also be used as the substrate 10. The substrate 10 may include various regions that have been suitably doped with impurities (e.g., p-type or n-type conductivity).
In some embodiments, the masking layer 100 comprises, for example, a pad oxide (e.g., silicon oxide) layer 105 and a silicon nitride masking layer 110. The pad oxide layer 105 may be formed by using a thermal oxidation or CVD process. The silicon nitride masking layer 110 may be formed by Physical Vapor Deposition (PVD), such as sputtering, CVD, Plasma Enhanced Chemical Vapor Deposition (PECVD), Atmospheric Pressure Chemical Vapor Deposition (APCVD), low pressure CVD (lpcvd), high plasma CVD (hdpcvd), Atomic Layer Deposition (ALD), and/or other processes.
In some embodiments, the thickness of the pad oxide layer 105 is in the range of about 2nm to about 15nm, and the thickness of the silicon nitride masking layer 110 is in the range of about 2nm to about 50 nm. A mask pattern 120 is additionally formed over the mask layer 100. The mask pattern 120 is a photoresist pattern formed, for example, by photolithography.
A hard mask pattern of the pad oxide layer 105 and the silicon nitride mask layer 100 is formed by using the mask pattern 120 as an etching mask. In some embodiments, the width of the hard mask pattern is in the range of about 5nm to about 20 nm. In a particular embodiment, the width of the hard mask pattern is in a range of about 7nm to about 12 nm.
As shown in fig. 2, the substrate 10 is patterned into the fin structure 20 by trench etching using a dry etching method and/or a wet etching method by using the hard mask pattern as an etching mask. The height H0 of the fin structure 20 is in a range of about 100nm to about 300 nm. In particular embodiments, height H0 is in the range of about 50nm to about 100 nm. When the height of the fin structures is not uniform, the height from the substrate H0 may be measured from a plane corresponding to the average height of the fin structures.
In fig. 2, three fin structures 20 are disposed over the substrate 10 and extend in the X-direction and are arranged in the Y-direction. However, the number of fin structures is not limited to three. The number may be as small as one, or four or more. In addition, one or more dummy fin structures may be disposed adjacent to both sides of the fin structure 20 to improve pattern fidelity during patterning. In some embodiments, the pitch of the plurality of fin structures is constant.
In this embodiment, a bulk silicon wafer is used as a starting material and constitutes the substrate 10. However, in some embodiments, other types of substrates are used as the substrate 10. For example, a silicon-on-insulator (SOI) wafer may be used as a starting material, with the insulator layer of the SOI wafer constituting the substrate 10 and the silicon layer of the SOI wafer being used for the fin structure 20.
In fig. 2, a height H1 corresponds to a height of the channel region of the fin FET as measured from a top of the fin structure. As described below, the height H1 is the distance between the top of the fin structure to the surface of the isolation insulating layer, along the vertical (Z) direction. H1 may also be defined by H0-T2, where T2 is the height (level) of the surface of the isolation insulator layer. Height H2 is about 50% of height H1 from the top of the fin structure, and height H3 is about 25% of height H1 from the top of the fin structure. When the surface of the insulating isolation layer is not flat, the height H1 is defined by the average height of the surface of the insulating isolation layer 30. In other embodiments, H2 may be about 40% to 60% of H1, and H3 may be about 20% to 30% of H1.
After forming the fin structures, the width W1 of the fin structures at the height H1 is in the range of about 10nm to 20nm in some embodiments, or in the range of about 12nm to about 18nm in other embodiments. The width W2 of the fin structure at the height H2 is in the range of about 9nm to 18nm in some embodiments, or about 10nm to about 16nm in other embodiments. The width W3 of the fin structure at the height H3 is in the range of about 8nm to 16nm in some embodiments, or about 9nm to about 15nm in other embodiments. The width W4 of the fin structure near the top of the fin structure is in the range of about 6nm to 15nm in some embodiments, or about 8nm to about 14nm in other embodiments.
As shown in fig. 3, an isolation insulation layer 30 (or so-called "Shallow Trench Isolation (STI)" layer) is formed over the substrate 10 and the fin structures 20. A blanket layer of insulating (or dielectric) material is formed over the substrate 10 such that the fin structures 20 are fully embedded in the blanket insulating layer, and then a planarization operation (e.g., a Chemical Mechanical Polishing (CMP) process or an etch back process) is performed so as to expose the top surfaces of the fin structures. During the planarization operation, the hard mask pattern is removed.
The isolation insulating layer 30 is made of silicon dioxide formed by, for example, LPCVD (low pressure chemical vapor deposition), plasma CVD, or flowable CVD. In flowable CVD, a flowable dielectric material is deposited instead of silicon oxide. Flowable dielectric materials, as their name implies, are capable of "flowing" during deposition to fill gaps or spaces with high aspect ratios. Typically, various chemicals are added to the silicon-containing precursor to allow the deposited film to flow. In some embodiments, nitrogen hydrogen bonds are added. Examples of flowable dielectric precursors, particularly flowable silicon oxide precursors, include silicates, siloxanes, Methyl Silsesquioxane (MSQ), Hydrogen Silsesquioxane (HSQ), MSQ/HSQ, perhydrosilazane (TCPS), Perhydropolysilazane (PSZ), Tetraethylorthosilicate (TEOS), or silylamines such as Trisilylamine (TSA). These flowable silicon oxide materials are formed in multiple operations. After the flowable film is deposited, the film is cured and then annealed to remove undesired elements to form silicon oxide. When the undesired elements are removed, the flowable film becomes dense and shrinks. In some embodiments, multiple annealing processes are performed. The isolation insulating layer 30 may be formed by using SOG. In some embodiments, SiO, SiON, SiOCN, or fluorine doped silicate glass (FSG) may be used as the isolation insulating layer 30. After the isolation insulation layer 30 is formed, a thermal process such as an annealing process may be performed to improve the quality of the isolation insulation layer 30.
Next, as shown in fig. 4, the thickness of the isolation insulating layer 30 is reduced to a height H2 or a height T1 measured from the substrate by, for example, an etch-back process. The etch-back process may be performed by using NF3And NH3A remote plasma etch of the gas is performed. By adjusting the etching time, a desired thickness of the isolation insulation layer 130 can be obtained. By reducing the thickness of the isolation insulation layer 30, an upper portion (about 50% of the channel region) of the fin structure is exposed.
During the formation of the isolation insulation layer 30 and recessing the isolation insulation layer 30, the fin structure 20 slightly loses its width. For example, after isolation insulating layer 30 recess, the width W1 of the fin structure at height H1 is in the range of about 8nm to 18nm in some embodiments, or about 10nm to about 16nm in other embodiments. The width W2 of the fin structure at the height H2 is in the range of about 7nm to 16nm in some embodiments, or about 8nm to about 14nm in other embodiments. The width W3 of the fin structure at height H3 is in the range of about 5nm to 13nm in some embodiments, or about 6nm to about 12nm in other embodiments. The width W4 of the fin structure near the top of the fin structure is in the range of about 4nm to 12nm in some embodiments, or about 5nm to about 10nm in other embodiments.
Next, as shown in fig. 5, an epitaxial layer 40 is formed over the exposed upper portion of the fin structure 20. In one embodiment, a Si epitaxial layer 40 is formed over the exposed upper portion, the Si epitaxial layer having a thickness in a range from about 0.5nm to about 2 nm. In other embodiments, the thickness of the Si epitaxial layer is in a range from about 0.8nm to about 1.2 nm.
SiH may be used for the Si epitaxial layer 404、Si2H6And/or SiH2Cl2As source gases, by CVD, ALD or MBE (molecular beam epitaxy). The epitaxial layer 40 is doped with a suitable dopant such As C, B, P or As, or in other embodiments is intrinsic. In some embodiments, the upper portion of the fin structure 20 is made of Ge or SiGe. In other embodiments, epitaxial layer 40 comprises Ge or SiGe.
As shown in fig. 6, the thickness of the insulating layer 30 is further reduced to a height H1. As shown in fig. 6, the upper portion of the fin structure is generally oval in cross-section, and the overall cross-sectional shape of the fin structure resembles a "bowling pin". The fin structure above the upper surface of the isolation insulating layer will become the channel region 50 of the fin FET, and the width of the fin structure along the Y direction varies as described below. At a level near the upper surface of the isolation insulating layer (substantially at height H1), the fin structure has a width W1. The width of the fin structure decreases as the distance from the upper surface of the isolation insulating layer increases (upward direction), and has a minimum width W5 at a level (or height) H4 measured from the top of the fin structure 20 having the epitaxial layer 40. Then, as the distance from the upper surface of the isolation insulating layer further increases toward the top of the fin structure, the width becomes a maximum value W6 at a level H5 measured from the top of the fin structure 20 having the epitaxial layer 40. In one embodiment, W5< W1 ≦ W6, and in other embodiments, W5< W6 ≦ W1, and in this case, W6 is a local maximum above H4. In some embodiments, W6/W5 is in the range of about 1.1 to about 1.5 and in other embodiments in the range of about 1.15 to 1.3.
In some embodiments, the height T1 measured from the substrate to the surface of the insulating layer after the first recess is in the range: a height T2 measured from the substrate to the surface of the insulating layer after the second recess plus 40% to 60% of a difference between a height H0 of the top surface of the fin structure and a height T2 of the insulating layer after the second recess. In other words, T1 is in the range of 40% to 60% of T2 plus (H0-T2). In particular embodiments, T1 is in the range of 70% to 80% of T2 plus (H0-T2).
Level H4 is positioned at about 20% to about 60% of the total channel height Hc from the top of the channel region in some embodiments, and about 25% to 50% of Hc from the top in other embodiments. Level H5 is positioned at about 5% to about 50% of the total channel height Hc from the top of the channel region in some embodiments, and about 10% to 40% of Hc from the top in other embodiments. Hc may also be defined by Ht-T2, where T2 is the height (level) of the surface of the remaining isolation insulating layer and Ht is the total height of the fin structure from the substrate.
The width W1 of the fin structure at the height H1 after the isolation insulating layer is recessed a second time is in the range of about 8nm to 18nm in some embodiments, or about 10nm to about 16nm in other embodiments. The minimum width W5 of the fin structure at level H4 is in the range of about 6nm to 14nm in some embodiments, or about 8nm to about 12nm in other embodiments. The width W6 of the fin structure is in the range of about 7nm to 18nm in some embodiments, or about 8nm to about 14nm in other embodiments.
Fig. 7-9 show exemplary cross-sectional views illustrating a sequential process for fabricating a fin FET device, according to another embodiment of the invention. The structures, materials, configurations, operations, and processes identical or similar to those of fig. 1 to 6 may be applied to this embodiment, and detailed explanation may be omitted.
Although in fig. 4, the isolation insulating layer 30 is recessed to a height H2, in fig. 7, the isolation insulating layer 30 is recessed to a height H3 so as to expose an upper portion of the fin structure 20.
After recessing the isolation insulating layer 30, the width W1 of the fin structure at the height H1 is in the range of about 8nm to 18nm in some embodiments, or about 10nm to about 16nm in other embodiments. The width W2 of the fin structure at the height H2 is in the range of about 6nm to 17nm in some embodiments, or about 9nm to about 15nm in other embodiments. The width W3 of the fin structure at height H3 is in the range of about 5nm to 13nm in some embodiments, or about 6nm to about 12nm in other embodiments. The width W4 of the fin structure near the top of the fin structure is in the range of about 4nm to 12nm in some embodiments, or about 5nm to about 10nm in other embodiments.
Similar to fig. 5, an epitaxial layer 40 is formed over the exposed upper portion of the fin structure 20, as shown in fig. 8.
Next, similarly to fig. 6, the thickness of the isolation insulating layer 30 is further reduced to a height H1, as shown in fig. 9. The upper portion of the flipper structure is generally oval in cross-section, and the overall cross-sectional shape of the flipper structure resembles a "bowling pin". Similar to fig. 6, the fin structure above the upper surface of the isolation insulator will become the channel region 50 of the fin FET, with a variation in width along the Y direction, having a width W1 at height H1, a minimum width W5 'at level (or height) H4', and a maximum value W6 'at level H5', as shown in fig. 9. In one embodiment, W5'< W1< W6', and in other embodiments, W5'< W6' < W1, and in this case, W6 'is a local maximum above H4'. In some embodiments, W6'/W5' is in the range of about 1.1 to about 1.5 and in other embodiments in the range of about 1.15 to 1.3.
Level H4' is positioned at about 10% to about 40% of the total channel height Hc ' from the top of the channel region in some embodiments, and at about 15% to 30% of Hc ' from the top in other embodiments. Level H5' is positioned at about 5% to about 30% of the total channel height Hc ' from the top of the channel region in some embodiments, and about 10% to 20% of Hc ' from the top in other embodiments.
After the isolation insulating layer is recessed a second time, the width W1 of the fin structure at the height H1 is in the range of about 8nm to 18nm in some embodiments, or about 10nm to about 16nm in other embodiments. The minimum width W5 'of the fin structure at level H4' is in the range of about 5nm to 13nm in some embodiments, or about 7nm to about 11nm in other embodiments. The width W6' of the fin structure is in the range of about 7nm to 17nm in some embodiments, or about 8nm to about 13nm in other embodiments.
After exposing channel region 50 in fig. 6 or 9, a gate structure is formed over fin structure 20. Fig. 10-12 are exemplary cross-sectional views of a fin-FET device according to various embodiments of the invention after forming the gate structure 200.
The gate structure 200 may be formed by a "gate-first" process or a "gate-last" (or replacement gate) process. Fig. 10-12 show the case of a "gate last" process.
In a gate last process, a dummy gate structure including a dummy gate dielectric layer and a dummy gate electrode layer is formed over a channel region, and then a gate structure not covered by the dummy gate structure is recessed below an isolation insulating layer. Source and drain structures (not shown) are then formed in the recessed portions to extend over the isolation insulating layer. A dielectric layer, which is an interlayer dielectric (ILD) layer (not shown), is formed over the dummy gate structure and the source drain structure. After the planarization operation of the ILD layer, the dummy gate structure is removed to form a gate space in which a channel region of the fin structure is exposed. Next, an interfacial layer 210 is formed on the exposed channel region, and a gate dielectric layer 220 is formed over the interfacial layer 210 (and the isolation insulating layer 30). Further, a work function adjusting layer 230 is formed over the gate dielectric layer 220, and then a gate electrode layer 240 is formed over the work function adjusting layer 230 (see fig. 10).
The interfacial layer 210 comprises a thin insulating layer made of, for example, silicon oxide, having a thickness of about 1 to 3 nm. The interface layer may be omitted.
The gate dielectric layer 220 may include one or more layers of: silicon oxide, silicon nitride, silicon oxynitride, or high-k dielectric materials. The high-k dielectric material comprises a metal oxide. Examples of metal oxides for high-k dielectrics include oxides of: li, Be, Mg, Ca, Sr, Sc, Y, Zr, Hf, Al, La, Ce, Pr, Nd, Sm, Eu, Gd, Tb, Dy, Ho, Er, Tm, Yb, Lu and/or mixtures thereof. In some casesIn an embodiment, one or more layers of the following are used as the high-k dielectric material: HfO2HfSiO, HfSiON, HfTaO, HfTiO, HfZrO, zirconia, alumina, titania, hafnia-alumina (HfO)2-Al2O3) And (3) alloying. The thickness of the gate dielectric layer 220 is in the range of about 1nm to 7 nm.
The work function adjusting layer 230 includes one or more layers of: TiN, TaN, TaAlC, TiC, TaC, Co, Al, TiAl, HfTi, TiSi, TaSi or TiAl C. For n-channel fin FETs, one or more layers of TaN, TaAlC, TiN, TiC, Co, TiAl, HfTi, TiSi, and TaSi may be used as work function adjusting layers, and for p-channel fin FETs, one or more layers of TiAlC, Al, TiAl, TaN, TaAlC, TiN, TiC, and Co are used as work function adjusting layers. The work function adjusting layer may be formed by ALD, PVD, CVD, e-beam evaporation, electroplating, or other suitable process. Further, the work function adjustment layer may be formed separately for an n-channel fin FET and a p-channel fin FET, which may use different metal layers. The work function adjusting layer may be omitted.
The gate electrode layer 240 includes one or more layers of conductive material such as: polysilicon, aluminum, copper, titanium, tantalum, tungsten, cobalt, molybdenum, tantalum nitride, nickel silicide, cobalt silicide, TiN, WN, TiAl, TiAIN, TaCN, TaC, TaSiN, metal alloys, other suitable materials, and/or combinations thereof. The gate electrode layer 240 may be formed by ALD, PVD, CVD, e-beam evaporation, electroplating, or other suitable process.
The thickness of the work function adjusting layer 230 may vary. Fig. 10 shows an embodiment in which the thickness of the work function adjusting layer 230 is relatively small. In some embodiments, the thickness of the work function adjusting layer 230 is in the range of about 5nm to about 10 nm. In fig. 10, the pitch PI of adjacent fin structures 20 is relatively large, for example in the range of about 3 xw 6 (or W6') to about 6 xw 6 (or W6'). In this case, the work function adjusting layer 230 can be conformally formed over the channel region 50, and the gate electrode layer 240 can fill the space between adjacent channel regions. In fig. 10, the bottom gate electrode layer 240 is positioned below the level H4 (or H4') because the work function adjusting layer 230 can be conformally formed over the channel region 50.
Fig. 11 and 12 show the case where the thickness of the work function adjusting layer 230 becomes thicker and/or the pitch PI becomes smaller.
In fig. 11 and 12, the thickness of the work function adjusting layer 230 is in a range of about 4nm to about 25nm, and the pitch PI of adjacent fin structures 20 is in a range of about 2 xw 6 (or W6') to about 4 xw 6 (or W6'). In this case, the work function adjusting layer 230 forms an overhang (overhang) and may form a gap 250 between adjacent channel regions, as shown in fig. 11. In a particular embodiment, the pitch PI varies from about 20nm to about 50 nm. In other embodiments, the work function adjusting layer 230 completely fills the space between adjacent channel regions, and the sides of the work function adjusting layer 230 merge together, as shown in fig. 12. In fig. 11 and 12, the bottom gate electrode layer 240 is positioned above the level H4 (or H4') because the space between adjacent channel regions is filled by the work function adjusting layer 230.
The various embodiments or examples described herein provide several advantages over the prior art. For example, in the present invention, since the upper portion of the channel region in the fin structure has an oval or bowling pin shape, the effective channel area can be reduced, and the FET performance can be improved. In addition, the rounded shape of the channel region can also prevent electric field concentration that may occur at acute corners.
It will be appreciated that not all advantages have necessarily been discussed herein, that no particular advantage is required of all embodiments or examples, and that other embodiments or examples may provide different advantages.
According to one aspect of the present invention, a method for fabricating a semiconductor device includes forming a fin structure over a substrate. The fin structure has a top surface and a side surface, and the top surface is positioned at a height H0 measured from the substrate. An insulating layer is formed over the fin structure and the substrate. In the first recess, the insulating layer is recessed to a height T1 measured from the substrate such that an upper portion of the fin structure is exposed from the insulating layer. Forming a semiconductor layer over the exposed upper portion of the fin structure. After forming the semiconductor layer, in a second recess, the insulating layer is recessed to a height T2 measured from the substrate such that a middle portion of the fin structure is exposed from the insulating layer. Forming a gate structure over the upper portion of the fin structure having the semiconductor layer and the exposed middle portion.
According to another aspect of the present invention, a semiconductor device includes a fin field effect transistor (finfet). The fin FET includes a fin structure disposed over a substrate, an isolation insulating layer, and a gate structure. The fin structure includes a channel region of the fin FET. The isolation insulating layer is disposed over the substrate and covers a lower portion of the fin structure. The channel region of the fin FET protrudes from the isolation insulating layer. The gate structure is disposed over the channel region. The channel region has a first width W1 at a surface level of the insulating spacer layer, a minimum width W5 at a first level above the surface level, and a maximum width W6 of the channel region above the first level at a second level above the first level.
According to another aspect of the present invention, a semiconductor device includes a fin field effect transistor (finfet). The fin FET includes at least two fin structures, an isolation insulating layer, and a gate structure. The fin structures are disposed over a substrate, and the fin structures respectively include channel regions of the fin FETs. An isolation insulating layer is disposed over the substrate and covers a lower portion of the fin structure. The channel region of the fin FET protrudes from an isolation insulating layer. The gate structure is disposed over the channel region. The distance from the upper surface of the isolation insulating layer increases in an upward direction, and the width of the channel region decreases, reaches a minimum width at a first level, and then increases and reaches a maximum width (which is a maximum width above the first level). The gate structure includes a gate dielectric layer disposed over the channel region, a work function adjusting layer disposed over the gate dielectric layer, and a gate electrode layer disposed over the work function adjusting layer. A lower portion of the gate electrode layer between the channel regions is positioned above the first level.
The foregoing outlines features of several embodiments or examples so that those skilled in the art may better understand the aspects of the present disclosure. Those skilled in the art should appreciate that they may readily use the present disclosure as a basis for designing or modifying other processes and structures for carrying out the same purposes and/or achieving the same advantages of the embodiments or examples introduced herein. Those skilled in the art should also realize that such equivalent constructions do not depart from the spirit and scope of the present disclosure, and that they may make various changes, substitutions, and alterations herein without departing from the spirit and scope of the present disclosure. A common new proposal should retain a user while keeping the upper small spool in the absence of the background, but must inform the user of the present.

Claims (17)

1. A method for fabricating a semiconductor device, comprising:
forming a plurality of fin structures above a substrate, the plurality of fin structures having top surfaces and side surfaces, the top surfaces being positioned at a height H0 measured from the substrate;
forming an insulating layer over the plurality of fin structures and the substrate;
first recessing the insulating layer to a height T1 measured from the substrate such that an upper portion of the plurality of fin structures is exposed from the insulating layer;
forming a semiconductor layer over the exposed upper portions of the plurality of fin structures;
after forming the semiconductor layer, second recessing the insulating layer to a height T2 measured from the substrate such that a middle portion of the plurality of fin structures is exposed from the insulating layer;
forming a gate dielectric layer over the upper portion of the plurality of fin structures having the semiconductor layer and the exposed middle portion; and
a work function adjustment layer is conformally formed over the gate dielectric layer such that sides of the work function adjustment layer merge together in spaces between adjacent fin structures.
2. The method of claim 1, wherein T1 is in the range of 40% to 60% of T2 plus (H0-T2).
3. The method of claim 1, wherein T1 is in the range of 70% to 80% of T2 plus (H0-T2).
4. The method of claim 2, wherein the thickness of the semiconductor layer is in the range of 0.5nm to 2 nm.
5. The method of claim 3, wherein the thickness of the semiconductor layer is in the range of 0.5nm to 2 nm.
6. The method of claim 2, wherein:
the upper portion of the plurality of fin structures having the semiconductor layer and the exposed middle portion constitute a channel region,
the channel region has a minimum width at a first level above a surface level of the insulating layer behind the second recess and a maximum width above the first level at a second level above the first level.
7. The method of claim 6, wherein the first level is positioned 20% to 60% below a top of the channel region by a height of the channel region measured from the surface level.
8. The method of claim 3, wherein:
the upper portion of the plurality of fin structures having the semiconductor layer and the exposed middle portion constitute a channel region,
the channel region has a minimum width at a first level above a surface level of the insulating layer behind the second recess and a maximum width above the first level at a second level above the first level.
9. The method of claim 8, wherein the first level is positioned 10-40% below a top of the channel region by a height of the channel region measured from the surface level.
10. A semiconductor device comprising a fin field effect transistor, fin FET, comprising:
a plurality of fin structures disposed above a substrate, the plurality of fin structures including a channel region of the fin FET;
an isolation insulating layer disposed over the substrate and covering a lower portion of the fin structure, the channel region of the fin FET protruding from the isolation insulating layer;
a gate structure disposed over the channel region, the gate structure comprising a work function adjusting layer, wherein:
the channel region has a first width W1 at a surface level of the insulating spacer layer, a minimum width W5 at a first level above the surface level, and a maximum width W6 of the channel region above the first level at a second level above the first level;
in a space between adjacent fin structures, side surfaces of the work function adjustment layers are merged together.
11. The semiconductor device of claim 10, wherein a cross-section of an upper portion of the channel region above the first level has an oval shape.
12. The semiconductor device according to claim 10, wherein a cross section of the channel region has a bowling pin shape.
13. The semiconductor device according to claim 10, wherein W5< W1< W6.
14. The semiconductor device according to claim 10, wherein W6/W5 is in a range of 1.1 to 1.5.
15. The semiconductor device of claim 10, wherein the first level is positioned 20-60% below a top of the channel region by a height of the channel region measured from the surface level.
16. The semiconductor device of claim 10, wherein the first level is positioned 10-40% below a top of the channel region by a height of the channel region measured from the surface level.
17. A semiconductor device including a fin field effect transistor, fin FET, comprising:
at least two fin structures disposed over a substrate, the fin structures respectively including channel regions of the fin FETs;
an isolation insulating layer disposed over the substrate and covering a lower portion of the fin structure, the channel region of the fin FET protruding from the isolation insulating layer;
a gate structure disposed over the channel region, wherein:
the width of the channel region decreases as a distance from an upper surface of the isolation insulating layer increases in an upward direction, reaches a minimum width at a first level, and then increases and reaches a maximum width, which is a maximum width above the first level,
the gate structure includes a gate dielectric layer disposed over the channel region, a work function adjusting layer disposed over the gate dielectric layer, and a gate electrode layer disposed over the work function adjusting layer,
the lowest part of the gate electrode layer between the channel regions is positioned above the first level,
the work function adjusting layer completely fills a space between the channel regions below the first level.
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