CN106504707B - OLED pixel mixed compensation circuit and mixed compensation method - Google Patents
OLED pixel mixed compensation circuit and mixed compensation method Download PDFInfo
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- CN106504707B CN106504707B CN201610900265.6A CN201610900265A CN106504707B CN 106504707 B CN106504707 B CN 106504707B CN 201610900265 A CN201610900265 A CN 201610900265A CN 106504707 B CN106504707 B CN 106504707B
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- 238000000034 method Methods 0.000 title claims abstract description 25
- 239000010409 thin film Substances 0.000 claims abstract description 162
- 239000010408 film Substances 0.000 claims abstract description 115
- 208000032005 Spinocerebellar ataxia with axonal neuropathy type 2 Diseases 0.000 claims description 30
- 208000033361 autosomal recessive with axonal neuropathy 2 spinocerebellar ataxia Diseases 0.000 claims description 30
- 230000032683 aging Effects 0.000 claims description 19
- 230000005611 electricity Effects 0.000 claims description 19
- 239000013078 crystal Substances 0.000 claims description 9
- 229910021420 polycrystalline silicon Inorganic materials 0.000 claims description 7
- 239000004065 semiconductor Substances 0.000 claims description 7
- 229910021417 amorphous silicon Inorganic materials 0.000 claims description 6
- 238000006243 chemical reaction Methods 0.000 claims description 6
- 229920005591 polysilicon Polymers 0.000 claims description 6
- 230000003446 memory effect Effects 0.000 claims description 5
- 230000003760 hair shine Effects 0.000 claims description 3
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- 230000015556 catabolic process Effects 0.000 abstract description 6
- 238000006731 degradation reaction Methods 0.000 abstract description 6
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- 229920001621 AMOLED Polymers 0.000 description 6
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- G—PHYSICS
- G09—EDUCATION; CRYPTOGRAPHY; DISPLAY; ADVERTISING; SEALS
- G09G—ARRANGEMENTS OR CIRCUITS FOR CONTROL OF INDICATING DEVICES USING STATIC MEANS TO PRESENT VARIABLE INFORMATION
- G09G3/00—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes
- G09G3/20—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters
- G09G3/22—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters using controlled light sources
- G09G3/30—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters using controlled light sources using electroluminescent panels
- G09G3/32—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters using controlled light sources using electroluminescent panels semiconductive, e.g. using light-emitting diodes [LED]
- G09G3/3208—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters using controlled light sources using electroluminescent panels semiconductive, e.g. using light-emitting diodes [LED] organic, e.g. using organic light-emitting diodes [OLED]
- G09G3/3225—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters using controlled light sources using electroluminescent panels semiconductive, e.g. using light-emitting diodes [LED] organic, e.g. using organic light-emitting diodes [OLED] using an active matrix
- G09G3/3233—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters using controlled light sources using electroluminescent panels semiconductive, e.g. using light-emitting diodes [LED] organic, e.g. using organic light-emitting diodes [OLED] using an active matrix with pixel circuitry controlling the current through the light-emitting element
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- G—PHYSICS
- G09—EDUCATION; CRYPTOGRAPHY; DISPLAY; ADVERTISING; SEALS
- G09G—ARRANGEMENTS OR CIRCUITS FOR CONTROL OF INDICATING DEVICES USING STATIC MEANS TO PRESENT VARIABLE INFORMATION
- G09G3/00—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes
- G09G3/20—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters
- G09G3/22—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters using controlled light sources
- G09G3/30—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters using controlled light sources using electroluminescent panels
- G09G3/32—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters using controlled light sources using electroluminescent panels semiconductive, e.g. using light-emitting diodes [LED]
- G09G3/3208—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters using controlled light sources using electroluminescent panels semiconductive, e.g. using light-emitting diodes [LED] organic, e.g. using organic light-emitting diodes [OLED]
- G09G3/3225—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters using controlled light sources using electroluminescent panels semiconductive, e.g. using light-emitting diodes [LED] organic, e.g. using organic light-emitting diodes [OLED] using an active matrix
-
- G—PHYSICS
- G09—EDUCATION; CRYPTOGRAPHY; DISPLAY; ADVERTISING; SEALS
- G09G—ARRANGEMENTS OR CIRCUITS FOR CONTROL OF INDICATING DEVICES USING STATIC MEANS TO PRESENT VARIABLE INFORMATION
- G09G2320/00—Control of display operating conditions
- G09G2320/04—Maintaining the quality of display appearance
- G09G2320/043—Preventing or counteracting the effects of ageing
- G09G2320/046—Dealing with screen burn-in prevention or compensation of the effects thereof
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Abstract
The present invention provides a kind of OLED pixel mixed compensation circuit and mixed compensation method, threshold voltage shift is compensated using 5T2C structures and driving thin film transistor (TFT) are the pixel internal drive circuits (100) of double-gate film transistor, the brightness irregularities that Organic Light Emitting Diode (D1) triggers due to degradation are compensated using external compensation circuit (200), combine the internal compensation speed of service soon with external compensation compensation range it is big the characteristics of, with better compensation effect, data-signal (Data) can be simplified, ensure the stability by OLED current, realize that the luminosity of panel is uniform.
Description
Technical field
The present invention relates to display technology field more particularly to a kind of OLED pixel mixed compensation circuit and mixed compensation sides
Method.
Background technology
Organic Light Emitting Diode (Organic Light Emitting Display, OLED) display device has spontaneous
Light, driving voltage are low, luminous efficiency is high, the response time is short, clarity and contrast are high, nearly 180 ° of visual angles, use temperature ranges
For width, it can be achieved that many advantages, such as Flexible Displays are with large area total colouring, it is the display for most having development potentiality to be known as by industry
Device.
OLED display according to type of drive can be divided into passive matrix OLED (Passive Matrix OLED,
) and active array type OLED (Active Matrix OLED, AMOLED) two major classes, i.e. direct addressin and film crystal PMOLED
Manage two class of (Thin Film Transistor, TFT) matrix addressing.Wherein, AMOLED has the pixel in array arrangement, belongs to
In active display type, luminous efficacy is high, is typically used as high-definition large scale display device.
AMOLED is current driving apparatus, when there is electric current to flow through Organic Light Emitting Diode, organic light-emitting diode,
And luminosity is determined by the electric current for flowing through Organic Light Emitting Diode itself.Most of existing integrated circuit (Integrated
Circuit, IC) voltage signal is all only transmitted, therefore the pixel-driving circuit of AMOLED needs to complete voltage signal being changed into electricity
Flow the task of signal.
Traditional AMOLED pixel-driving circuits are usually 2T1C, i.e., two thin film transistor (TFT)s add the structure of a capacitance,
Convert voltages into electric current.One of thin film transistor (TFT) is switching thin-film transistor, for controlling the entrance of data-signal, separately
One thin film transistor (TFT) is driving thin film transistor (TFT), for controlling the electric current by Organic Light Emitting Diode, therefore drives film
The importance of the threshold voltage of transistor is just fairly obvious, and the positively or negatively drift of threshold voltage has and can cause in identical number
It is believed that number under there is different electric currents to pass through Organic Light Emitting Diode.However, at present by low temperature polycrystalline silicon or oxide semiconductor system
Because of factors such as illumination, the effects of source-drain electrode voltage stress threshold voltage can occur in use for the thin film transistor (TFT) of work
Drift phenomenon.In traditional 2T1C circuits, driving the drift of the threshold voltage of thin film transistor (TFT) can not be improved by adjusting,
Meanwhile organic light emitting diode can also generate threshold voltage shift due to aging in use.The drift of threshold voltage
It can cause unstable by the electric current of Organic Light Emitting Diode, panel leads to the problem of brightness disproportionation, it is therefore desirable to using different
Method compensates the threshold voltage shift of driving thin film transistor (TFT) and Organic Light Emitting Diode.
In the prior art to driving the method that thin film transistor (TFT) threshold voltage shift compensates including internal compensation and outside
Portion compensates.Merely threshold voltage compensation is realized by way of new thin film transistor (TFT) and signal wire are added inside pixel
Method is referred to as internal compensation, and compensation process is relatively easy, and the speed of service is very fast, but pixel circuit is complicated, and compensate
It is limited in scope；Threshold voltage compensation is carried out by panel external integrated (integrated circuit, IC) chip
Method is referred to as external compensation, and pixel circuit is relatively easy, and compensation range is relatively large, but compensation process is complicated, operation speed
Degree is slow.
In addition, degradation of the Organic Light Emitting Diode because of itself, not only threshold voltage rises, but also flows through identical
Electric current when, front and rear organic light-emitting diode brightness of failing can also decline, and internal compensation can only at most compensate threshold value electricity
Pressure ensures that the electric current that Organic Light Emitting Diode is flowed through before and after failing is identical, and can not ensure that luminosity is consistent.
The content of the invention
It, can not only effective compensation threshold voltage it is an object of the invention to provide a kind of OLED pixel mixed compensation circuit
Drift, additionally it is possible to compensate the brightness irregularities that organic light emitting diode triggers in use due to decline aging, simplify
Data-signal ensures the stability by OLED current, realizes that the luminosity of panel is uniform, and compensation speed is fast, compensates model
It encloses big.
Another object of the present invention is to provide a kind of OLED pixel mixed compensation method, internal compensation can be carried out at the same time
And external compensation, the brightness triggered in use due to decline aging to threshold voltage shift and organic light emitting diode
Non-uniform compensation effect is good, and compensation speed is fast, and compensation range is big.
To achieve the above object, present invention firstly provides a kind of OLED pixel mixed compensation circuit, including being driven inside pixel
Dynamic circuit and the external compensation circuit being electrical connected with the pixel internal drive circuits；
The pixel internal drive circuits include：First film transistor, the second thin film transistor (TFT), the 3rd film crystal
Pipe, the 4th thin film transistor (TFT), the 5th thin film transistor (TFT), the first capacitance, the second capacitance and Organic Light Emitting Diode；
First film transistor is double-gate film transistor, and for driving Organic Light Emitting Diode, top-gated electrically connects
First node is connect, bottom gate is electrically connected section point, and source electrode is electrically connected the 3rd node, and drain electrode is electrically connected fourth node；
The grid of second thin film transistor (TFT) accesses the first scanning signal, source electrode incoming data signal, and drain electrode is electrically connected the
Two nodes；
The grid of 3rd thin film transistor (TFT) accesses the second scanning signal, and source electrode is electrically connected fourth node, and drain electrode electrically connects
Connect first node；
The grid of 4th thin film transistor (TFT) accesses the 3rd scanning signal, source electrode access supply voltage, and drain electrode is electrically connected the
Four nodes；
The grid of 5th thin film transistor (TFT) accesses the 4th scanning signal, and source electrode is electrically connected the 3rd node, and drain electrode electrically connects
Connect external compensation circuit；
One end of first capacitance is electrically connected section point, other end ground connection；
One end of second capacitance is electrically connected first node, other end ground connection；
The anode of Organic Light Emitting Diode is electrically connected the 3rd node, minus earth；
The external compensation circuit includes：The analog-digital converter that is sequentially connected in series, data search module, control module, storage
Module and digital analog converter；
The input terminal of analog-digital converter is electrically connected the drain electrode of the 5th thin film transistor (TFT), and output terminal is electrically connected data search
The input terminal of module；
The output terminal of data search module is electrically connected the input terminal of control module；
The output terminal of control module is electrically connected the input terminal of memory module；
The output terminal of memory module is electrically connected the input terminal of digital analog converter；
The output terminal of digital analog converter is electrically connected the source electrode of the second thin film transistor (TFT)；
The aging current data and and organic light-emitting diodes of preset Organic Light Emitting Diode in the data search module
The one-to-one output voltage difference value of aging current data of pipe.
The external compensation circuit further includes operational amplifier and the 3rd capacitance；
The first input end of the operational amplifier is electrically connected the drain electrode of the 5th thin film transistor (TFT), the second input termination
Ground, output terminal are electrically connected the input terminal of analog-digital converter；
One end of 3rd capacitance is electrically connected the first input end of operational amplifier, and the other end is electrically connected computing and puts
The output terminal of big device.
The first film transistor, the second thin film transistor (TFT), the 3rd thin film transistor (TFT), the 4th thin film transistor (TFT) and
Five thin film transistor (TFT)s are low-temperature polysilicon film transistor, oxide semiconductor thin-film transistor or amorphous silicon membrane crystal
Pipe.
When first scanning signal, the second scanning signal, the 3rd scanning signal and the 4th scanning signal pass through outside
Sequence controller provides.
First scanning signal, the second scanning signal, the 3rd scanning signal, the 4th scanning signal and data-signal phase
Combination, successively corresponding to an external compensation stage, a pre-charging stage, a threshold voltage programming phases and the luminous rank of a driving
Section；
In the external compensation stage, first, second, third scanning signal and data-signal are provided which low potential,
4th scanning signal provides high potential；
In the pre-charging stage, described first, second and the 3rd scanning signal be provided which high potential, the described 4th sweeps
It retouches signal and low potential is provided, the data-signal provides preset potential；
In the threshold voltage programming phases, the scanning signal of described first, the 3rd and the 4th is provided which low potential, described
Second scanning signal provides high potential, and the data-signal provides preset potential；
In the driving glow phase, described first and the 3rd scanning signal be provided which high potential, second and the 4th sweep
It retouches signal and is provided which low potential, the data-signal provides display data signal high potential.
The preset potential is less than display data signal high potential.
The present invention also provides a kind of OLED pixel mixed compensation methods, include the following steps：
Step 1 provides an OLED pixel mixed compensation circuit；
The OLED pixel mixed compensation circuit include pixel internal drive circuits and with the pixel internal drive circuits
The external compensation circuit being electrical connected；
The pixel internal drive circuits include：First film transistor, the second thin film transistor (TFT), the 3rd film crystal
Pipe, the 4th thin film transistor (TFT), the 5th thin film transistor (TFT), the first capacitance, the second capacitance and Organic Light Emitting Diode；
First film transistor is double-gate film transistor, and for driving Organic Light Emitting Diode, top-gated electrically connects
First node is connect, bottom gate is electrically connected section point, and source electrode is electrically connected the 3rd node, and drain electrode is electrically connected fourth node；
The grid of second thin film transistor (TFT) accesses the first scanning signal, source electrode incoming data signal, and drain electrode is electrically connected the
Two nodes；
The grid of 3rd thin film transistor (TFT) accesses the second scanning signal, and source electrode is electrically connected fourth node, and drain electrode electrically connects
Connect first node；
The grid of 4th thin film transistor (TFT) accesses the 3rd scanning signal, source electrode access supply voltage, and drain electrode is electrically connected the
Four nodes；
The grid of 5th thin film transistor (TFT) accesses the 4th scanning signal, and source electrode is electrically connected the 3rd node, and drain electrode electrically connects
Connect external compensation circuit；
One end of first capacitance is electrically connected section point, other end ground connection；
One end of second capacitance is electrically connected first node, other end ground connection；
The anode of Organic Light Emitting Diode is electrically connected the 3rd node, minus earth；
The external compensation circuit includes：The analog-digital converter that is sequentially connected in series, data search module, control module, storage
Module and digital analog converter；
The input terminal of analog-digital converter is electrically connected the drain electrode of the 5th thin film transistor (TFT), and output terminal is electrically connected data search
The input terminal of module；
The output terminal of data search module is electrically connected the input terminal of control module；
The output terminal of control module is electrically connected the input terminal of memory module；
The output terminal of memory module is electrically connected the input terminal of digital analog converter；
The output terminal of digital analog converter is electrically connected the source electrode of the second thin film transistor (TFT)；
The aging current data and and organic light-emitting diodes of preset Organic Light Emitting Diode in the data search module
The one-to-one output voltage difference value of aging current data of pipe；
Step 2, into the external compensation stage；
First, second, third scanning signal and data-signal are provided which low potential, second, third and it is the 4th thin
Film transistor is turned off, and the 4th scanning signal provides high potential, and the 5th thin film transistor (TFT) is opened, and flows through organic light-emitting diodes
The electric current input analog-to-digital converter of pipe, the actual current signal input data that Organic Light Emitting Diode is flowed through after analog-to-digital conversion are looked into
Look for module, data search module is by the actual current signal for flowing through Organic Light Emitting Diode and preset Organic Light Emitting Diode
Aging current data obtain corresponding output voltage difference value after being compared, and control module is according to the output voltage difference
Value adjusts offset data signal, and is stored in memory module by the data-signal after compensating is adjusted；
Step 3, into pre-charging stage；
Described first, second and the 3rd scanning signal be provided which high potential, second, third and the 4th thin film transistor (TFT) are beaten
It opens, by the top-gated of first film transistor and drain electrode short circuit, the 4th scanning signal provides the 3rd thin film transistor (TFT) of conducting
Low potential, the 5th thin film transistor (TFT) are closed, and the data-signal provides preset potential, and the first capacitance charges, section point
That is the bottom gate write-in preset potential of first film transistor, the top-gated of first node and fourth node, that is, first film transistor with
Drain electrode write-in supply voltage；
Step 4, into threshold voltage programming phases；
The scanning signal of described first, the 3rd and the 4th provides low potential, and the second, the 4th and the 5th thin film transistor (TFT) closes
It closes, second scanning signal provides high potential, and the 3rd thin film transistor (TFT) is opened, and the data-signal provides preset potential, the
The top-gated of one node and fourth node, that is, first film transistor constantly reduces at any time with the voltage to drain, the first film crystal
The threshold voltage of pipe constantly raises, when the threshold voltage of first film transistor reaches Vth=Vpre-VOLEDWhen, wherein Vth is
The threshold voltage of first film transistor, Vpre are preset potential, VOLEDIt is thin for the threshold voltage of Organic Light Emitting Diode, first
The threshold voltage of film transistor no longer changes, and the voltage of the top-gated of first film transistor is stored in the second capacitance at this time；
Step 5, into driving glow phase；
Described first and the 3rd scanning signal high potential is provided, second and the 4th thin film transistor (TFT) open, second and the
Four scanning signals provide low potential, and the 3rd and the 5th thin film transistor (TFT) is closed, and memory module output adjusts the data letter after compensation
Number, after digital analog converter does digital-to-analogue conversion display data signal high potential, display are provided to the source electrode of the second thin film transistor (TFT)
Data-signal high potential writes the bottom gate of section point, that is, first film transistor, the top of first node, that is, first film transistor
The voltage value of grid remains unchanged under the memory action of the second capacitance, and the threshold voltage for maintaining first film transistor is Vth=
Vpre-VOLED, first film transistor conducting, organic light-emitting diode, and flow through the electricity of the Organic Light Emitting Diode
Stream is unrelated with the threshold voltage of first film transistor.
The external compensation circuit further includes operational amplifier and the 3rd capacitance；
The first input end of the operational amplifier is electrically connected the drain electrode of the 5th thin film transistor (TFT), the second input termination
Ground, output terminal are electrically connected the input terminal of analog-digital converter；
One end of 3rd capacitance is electrically connected the first input end of operational amplifier, and the other end is electrically connected computing and puts
The output terminal of big device；
In the step 2, the electric current of the Organic Light Emitting Diode input analog-to-digital converter after operational amplifier amplifies is flowed through
Input terminal.
The first film transistor, the second thin film transistor (TFT), the 3rd thin film transistor (TFT), the 4th thin film transistor (TFT) and
Five thin film transistor (TFT)s are low-temperature polysilicon film transistor, oxide semiconductor thin-film transistor or amorphous silicon membrane crystal
Pipe.
When first scanning signal, the second scanning signal, the 3rd scanning signal and the 4th scanning signal pass through outside
Sequence controller provides；
The preset potential is less than display data signal high potential.
Beneficial effects of the present invention：A kind of OLED pixel mixed compensation circuit provided by the invention and mixed compensation method,
It is electric to compensate threshold value for the pixel internal drive circuits of double-gate film transistor using 5T2C structures and driving thin film transistor (TFT)
Pressure drift, the brightness irregularities that Organic Light Emitting Diode triggers due to degradation are compensated using external compensation circuit, are tied
Closed the internal compensation speed of service soon with external compensation compensation range it is big the characteristics of, have better compensation effect, can simplify
Data-signal ensures the stability by OLED current, realizes that the luminosity of panel is uniform.
Description of the drawings
In order to be further understood that the feature of the present invention and technology contents, refer to below in connection with the detailed of the present invention
Illustrate and attached drawing, however attached drawing is only provided with reference to illustrating to use, being not used for being any limitation as the present invention.
In attached drawing,
Fig. 1 is the circuit diagram of the OLED pixel mixed compensation circuit of the present invention；
Fig. 2 is the sequence diagram of the OLED pixel mixed compensation circuit of the present invention；
Fig. 3 is the schematic diagram of the step 2 of the OLED pixel mixed compensation method of the present invention；
Fig. 4 is the schematic diagram of the step 3 of the OLED pixel mixed compensation method of the present invention；
Fig. 5 is the schematic diagram of the step 4 of the OLED pixel mixed compensation method of the present invention；
Fig. 6 is the schematic diagram of the step 5 of the OLED pixel mixed compensation method of the present invention.
Specific embodiment
Further to illustrate the technological means and its effect of the invention taken, below in conjunction with being preferably implemented for the present invention
Example and its attached drawing are described in detail.
It please refers to Fig.1 and Fig. 2, present invention firstly provides a kind of OLED pixel mixed compensation circuit, including being driven inside pixel
Dynamic circuit 100 and the external compensation circuit 200 being electrical connected with the pixel internal drive circuits 100.
The pixel internal drive circuits 100 include：It is first film transistor T1, the second thin film transistor (TFT) T2, the 3rd thin
Film transistor T3, the 4th thin film transistor (TFT) T4, the 5th thin film transistor (TFT) T5, the first capacitance C1, the second capacitance C2 and organic light emission
Diode D1.
First film transistor T1 is double-gate film transistor, and top-gated TG is electrically connected first node T, bottom gate BG electricity
Property connection section point B, source electrode is electrically connected the 3rd node S, and drain electrode is electrically connected fourth node D；This is two grid first thin
Film transistor T1 is as driving thin film transistor (TFT), and for driving Organic Light Emitting Diode D1, according to current research, double grid is very thin
The characteristics of film transistor, is that voltage and influence of the illumination stress to its threshold voltage are smaller, while its threshold voltage and top-gated electricity
Negatively correlated trend is pressed, i.e. top-gated voltage is bigger, and threshold voltage is smaller；
Grid access the first scanning signal Scan1, the source electrode incoming data signal Data of second thin film transistor (TFT) T2, drain electrode
It is electrically connected section point B；
The grid of 3rd thin film transistor (TFT) T3 accesses the second scanning signal Scan2, and source electrode is electrically connected fourth node D, leakage
Pole is electrically connected first node T；
The grid of 4th thin film transistor (TFT) T4 accesses the 3rd scanning signal Scan3, source electrode access supply voltage VDD, drain electrode
It is electrically connected fourth node D；
The grid of 5th thin film transistor (TFT) T5 accesses the 4th scanning signal Scan4, and source electrode is electrically connected the 3rd node S, leakage
Pole is electrically connected external compensation circuit 200；
One end of first capacitance C1 is electrically connected section point B, other end ground connection；
One end of second capacitance C2 is electrically connected first node T, other end ground connection；
The anode of Organic Light Emitting Diode D1 is electrically connected the 3rd node S, minus earth.
The external compensation circuit 200 includes：Analog-digital converter (the Analog-to-Digital being sequentially connected in series
Converter, ADC) 210, data search module (Look-Up-Table, LUT) 220, control module 230, memory module 240,
And digital analog converter 250 (Digital-to-Analog Converter, DAC).
The input terminal of analog-digital converter 210 is electrically connected the drain electrode of the 5th thin film transistor (TFT) T5, and output terminal is electrically connected number
According to the input terminal of searching module 220；
The output terminal of data search module 220 is electrically connected the input terminal of control module 230；The data search module
In 220 the aging current data of preset Organic Light Emitting Diode and with the aging current data of Organic Light Emitting Diode one by one
Corresponding output voltage difference value；
The output terminal of control module 230 is electrically connected the input terminal of memory module 240；
The output terminal of memory module 240 is electrically connected the input terminal of digital analog converter 250；
The output terminal of digital analog converter 250 is electrically connected the source electrode of the second thin film transistor (TFT) T2.
Further, the external compensation circuit 200 further includes 260 and the 3rd capacitance C3 of operational amplifier.The computing
The drain electrode of the 5th thin film transistor (TFT) T5 of first input end electric connection of amplifier 260, the second input end grounding, output terminal are electrical
Connect the input terminal of analog-digital converter 210；One end of the 3rd capacitance C3 is electrically connected the first input of operational amplifier 260
End, the other end are electrically connected the output terminal of operational amplifier 260, input and output of the 3rd capacitance C3 to operational amplifier 260
Play feedback effect.
Specifically, the first film transistor T1, the second thin film transistor (TFT) T2, the 3rd thin film transistor (TFT) T3, the 4th thin
Film transistor T4 and the 5th thin film transistor (TFT) T5 be low-temperature polysilicon film transistor, oxide semiconductor thin-film transistor,
Or amorphous silicon film transistor.
Specifically, the first scanning signal Scan1, the second scanning signal Scan2, the 3rd scanning signal Scan3 and
Four scanning signal Scan4 are provided by external time schedule controller.
The first scanning signal Scan1, the second scanning signal Scan2, the 3rd scanning signal Scan3, the 4th scanning letter
Number Scan4 and data-signal Data is combined, successively corresponding to an external compensation stage 1, a pre-charging stage 2, threshold value electricity
Programming phases 3 and one is pressed to drive glow phase 4.In the external compensation stage 1, first, second, third scanning signal
Scan1, Scan2, Scan3 and data-signal Data are provided which low potential, and the 4th scanning signal Scan4 provides high potential；
In the pre-charging stage 2, described first, second and the 3rd scanning signal Scan1, Scan2, Scan3 be provided which high potential,
The 4th scanning signal Scan4 provides low potential, and the data-signal Data provides preset potential Vpre；In threshold value electricity
Programming phases 3 are pressed, described first, the 3rd and the 4th scanning signal Scan1, Scan3, Scan4 are provided which low potential, described the
Two scanning signal Scan2 provide high potential, and the data-signal Data provides preset potential Vpre；In the driving glow phase
4, described first and the 3rd scanning signal Scan1, Scan3 be provided which high potential, second and the 4th scanning signal Scan2,
Scan4 is provided which low potential, and the data-signal Data provides display data signal high potential Vdata.
Specifically, the preset potential Vpre is less than display data signal high potential Vdata.
Incorporated by reference to Fig. 1 and Fig. 2, the course of work of OLED pixel mixed compensation circuit of the invention is as follows：
In external compensated stage 1, described first, second, third scanning signal Scan1, Scan2, Scan3 and data-signal
Data is provided which low potential, second, third and the 4th thin film transistor (TFT) T2, T3, T4 are turned off, the 4th scanning signal
Scan4 provides high potential, and the 5th thin film transistor (TFT) T5 is opened, and flows through the electric current input analog-to-digital converter of Organic Light Emitting Diode D1
210, the actual current signal input data searching module 220 of Organic Light Emitting Diode D1 is flowed through after analog-to-digital conversion, data are looked into
Look for module 220 that will flow through the aging current of the actual current signal and preset Organic Light Emitting Diode of Organic Light Emitting Diode D1
Data obtain corresponding output voltage difference value after being compared, and control module 230 is according to the output voltage difference value tune
Offset data signal Data is saved, to ensure that the brightness of Organic Light Emitting Diode is consistent, is avoided old due to Organic Light Emitting Diode
The brightness irregularities changed decline and triggered, and it is stored in memory module 240 by the data-signal Data after compensating is adjusted；
In pre-charging stage 2, described first, second and the 3rd scanning signal Scan1, Scan2, Scan3 be provided which high electricity
Position, second, third and the 4th thin film transistor (TFT) T2, T3, T4 are opened, and the 3rd thin film transistor (TFT) T3 of conducting is brilliant by the first film
The top-gated TG of body pipe T1 and drain electrode short circuit, the 4th scanning signal Scan4 provide low potential, and the 5th thin film transistor (TFT) T5 is closed
It closes, the data-signal Data offer preset potentials Vpre, the first capacitance C1 charge, section point B namely the first film
The bottom gate BG write-ins preset potential Vpre, first node T of transistor T1 and the top of fourth node D namely first film transistor T1
Grid TG and drain electrode write-in supply voltage VDD；
In threshold voltage programming phases 3, described first, the 3rd and the 4th scanning signal Scan1, Scan3, Scan4 are provided
Low potential, the second, the 4th and the 5th thin film transistor (TFT) T2, T4, T5 are closed, and the second scanning signal Scan2 provides high electricity
Position, the 3rd thin film transistor (TFT) T3 are opened, and the data-signal Data provides preset potential Vpre, due to the storage of the first capacitance C1
Effect, the bottom gate BG of section point B namely first film transistor T1 maintain preset potential Vpre, first node T and the 4th section
The top-gated TG of point D namely first film transistor T1 and drain electrode are at this time supply voltage VDD, due to double-gate film transistor
Characteristic, the threshold voltage of first film transistor T1 is minimum at this time, and first film transistor T1 is opened, first node T and the 4th
The top-gated TG of node D namely first film transistor T1 and the voltage of drain electrode constantly reduce at any time, first film transistor T1
Threshold voltage constantly raise, when the threshold voltage of first film transistor T1 reaches Vth=VBG- Vs=Vpre-VOLEDWhen,
Middle Vth be first film transistor T1 threshold voltage, VBGFor the bottom gate voltage of first film transistor T1, Vs is the 3rd node
The source voltage of S, that is, first film transistor T1, Vpre are preset potential, VOLEDFor the threshold value electricity of Organic Light Emitting Diode D1
Pressure, the threshold voltage of first film transistor T1 no longer change, at this time the top-gated of first node T namely first film transistor T1
The voltage of TG is stored in the second capacitance C2；
Driving glow phase 4, described first and the 3rd scanning signal Scan1, Scan3 provide high potential, second and
4th thin film transistor (TFT) T2, T4 open, second and the 4th scanning signal Scan2, Scan4 provide low potential, the 3rd and the 5th
Thin film transistor (TFT) T3, T5 are closed, and the output of memory module 240 adjusts the data-signal Data after compensation, is done through digital analog converter 250
Display data signal high potential Vdata is provided to the source electrode of the second thin film transistor (TFT) T2 after digital-to-analogue conversion, display data signal is high
The bottom gate BG, first node T, that is, first film transistor T1 of current potential Vdata write-in section points B, that is, first film transistor T1
The voltage value of top-gated TG remained unchanged under the memory action of the second capacitance C2, maintain the threshold value electricity of first film transistor T1
It presses as Vth=Vpre-VOLED, first film transistor T1 conductings, Organic Light Emitting Diode D1 shines.
Further, it is known that calculating the formula of electric current for flowing through Organic Light Emitting Diode D1 is：
I=1/2Cox (μ W/L) (Vgs-Vth)2 (1)
Wherein I be flow through Organic Light Emitting Diode D1 electric current, μ be drive the carrier mobility of thin film transistor (TFT), W and
Between L is respectively the width for the raceway groove for driving thin film transistor (TFT) and length, Vgs are driving thin film transistor (TFT) bottom-gate and source electrode
Voltage, Vth be driving thin film transistor (TFT) threshold voltage namely first film transistor T1 threshold voltage,
And Vgs=Vdata-VOLED (2)
Wherein Vdata is to adjust the display data signal high potential that the data-signal Data after compensating is provided,
(2) formula substitution (1) formula is obtained：
I=1/2Cox (μ W/L) (Vdata-VOLED–Vpre+VOLED)2
=1/2Cox (μ W/L) (Vdata-Vpre)2
It can be seen that flow through the electric current of Organic Light Emitting Diode D1 and the threshold voltage of the first film transistor T1 and organic
The threshold voltage of light emitting diode D1 is unrelated, ensure that the stability for the electric current for flowing through Organic Light Emitting Diode D1, Neng Goubao
It is uniform to demonstrate,prove the luminosity of Organic Light Emitting Diode, improves the display effect of picture.
The OLED pixel mixed compensation circuit of the present invention is double-gate film using 5T2C structures and driving thin film transistor (TFT)
The pixel internal drive circuits 100 of transistor compensate threshold voltage shift, and organic hair is compensated using external compensation circuit 200
The brightness irregularities that optical diode triggers due to degradation combine the internal compensation speed of service and are compensated soon with external compensation
The characteristics of scope is big has better compensation effect.
Please refer to Fig. 3 to Fig. 6, with reference to Fig. 1 and Fig. 2, based on above-mentioned OLED pixel mixed compensation circuit, the present invention is also
A kind of OLED pixel mixed compensation method is provided, is included the following steps：
Step 1 provides an OLED pixel mixed compensation circuit.
The OLED pixel mixed compensation circuit include pixel internal drive circuits 100 and with the pixel internal drive
The external compensation circuit 200 that circuit 100 is electrical connected.
The pixel internal drive circuits 100 include：It is first film transistor T1, the second thin film transistor (TFT) T2, the 3rd thin
Film transistor T3, the 4th thin film transistor (TFT) T4, the 5th thin film transistor (TFT) T5, the first capacitance C1, the second capacitance C2 and organic light emission
Diode D1.
First film transistor T1 is double-gate film transistor, and top-gated TG is electrically connected first node T, bottom gate BG electricity
Property connection section point B, source electrode is electrically connected the 3rd node S, and drain electrode is electrically connected fourth node D；This is two grid first thin
Film transistor T1 is as driving thin film transistor (TFT), and for driving Organic Light Emitting Diode D1, according to current research, double grid is very thin
The characteristics of film transistor, is that voltage and influence of the illumination stress to its threshold voltage are smaller, while its threshold voltage and top-gated electricity
Negatively correlated trend is pressed, i.e. top-gated voltage is bigger, and threshold voltage is smaller；
Grid access the first scanning signal Scan1, the source electrode incoming data signal Data of second thin film transistor (TFT) T2, drain electrode
It is electrically connected section point B；
The grid of 3rd thin film transistor (TFT) T3 accesses the second scanning signal Scan2, and source electrode is electrically connected fourth node D, leakage
Pole is electrically connected first node T；
The grid of 4th thin film transistor (TFT) T4 accesses the 3rd scanning signal Scan3, source electrode access supply voltage VDD, drain electrode
It is electrically connected fourth node D；
The grid of 5th thin film transistor (TFT) T5 accesses the 4th scanning signal Scan4, and source electrode is electrically connected the 3rd node S, leakage
Pole is electrically connected external compensation circuit 200；
One end of first capacitance C1 is electrically connected section point B, other end ground connection；
One end of second capacitance C2 is electrically connected first node T, other end ground connection；
The anode of Organic Light Emitting Diode D1 is electrically connected the 3rd node S, minus earth.
The external compensation circuit 200 includes：The analog-digital converter 210 that is sequentially connected in series, data search module 220, control
Module 230, memory module 240 and digital analog converter 250.
The input terminal of analog-digital converter 210 is electrically connected the drain electrode of the 5th thin film transistor (TFT) T5, and output terminal is electrically connected number
According to the input terminal of searching module 220；
The output terminal of data search module 220 is electrically connected the input terminal of control module 230；The data search module
In 220 the aging current data of preset Organic Light Emitting Diode and with the aging current data of Organic Light Emitting Diode one by one
Corresponding output voltage difference value；
The output terminal of control module 230 is electrically connected the input terminal of memory module 240；
The output terminal of memory module 240 is electrically connected the input terminal of digital analog converter 250；
The output terminal of digital analog converter 250 is electrically connected the source electrode of the second thin film transistor (TFT) T2.
Further, the external compensation circuit 200 further includes 260 and the 3rd capacitance C3 of operational amplifier.The computing
The drain electrode of the 5th thin film transistor (TFT) T5 of first input end electric connection of amplifier 260, the second input end grounding, output terminal are electrical
Connect the input terminal of analog-digital converter 210；One end of the 3rd capacitance C3 is electrically connected the first input of operational amplifier 260
End, the other end are electrically connected the output terminal of operational amplifier 260, input and output of the 3rd capacitance C3 to operational amplifier 260
Play feedback effect.
Specifically, the first film transistor T1, the second thin film transistor (TFT) T2, the 3rd thin film transistor (TFT) T3, the 4th thin
Film transistor T4 and the 5th thin film transistor (TFT) T5 be low-temperature polysilicon film transistor, oxide semiconductor thin-film transistor,
Or amorphous silicon film transistor.
Specifically, the first scanning signal Scan1, the second scanning signal Scan2, the 3rd scanning signal Scan3 and
Four scanning signal Scan4 are provided by external time schedule controller.
Step 2, into the external compensation stage 1.
With reference to Fig. 2 and Fig. 3, described first, second, third scanning signal Scan1, Scan2, Scan3 and data-signal
Data is provided which low potential, second, third and the 4th thin film transistor (TFT) T2, T3, T4 are turned off, the 4th scanning signal
Scan4 provides high potential, and the 5th thin film transistor (TFT) T5 is opened, and flows through the electric current input analog-to-digital converter of Organic Light Emitting Diode D1
210, the actual current signal input data searching module 220 of Organic Light Emitting Diode D1 is flowed through after analog-to-digital conversion, data are looked into
Look for module 220 that will flow through the aging current of the actual current signal and preset Organic Light Emitting Diode of Organic Light Emitting Diode D1
Data obtain corresponding output voltage difference value after being compared, and control module 230 is according to the output voltage difference value tune
Offset data signal Data is saved, to ensure that the brightness of Organic Light Emitting Diode is consistent, is avoided old due to Organic Light Emitting Diode
The brightness irregularities changed decline and triggered, and it is stored in memory module 240 by the data-signal Data after compensating is adjusted.
Further, in the step 2, the electric current of Organic Light Emitting Diode D1 is flowed through after the amplification of operational amplifier 260
The input terminal of input analog-to-digital converter 210.
Step 3, into pre-charging stage 2.
With reference to Fig. 2 and Fig. 4, described first, second and the 3rd scanning signal Scan1, Scan2, Scan3 be provided which high electricity
Position, second, third and the 4th thin film transistor (TFT) T2, T3, T4 are opened, and the 3rd thin film transistor (TFT) T3 of conducting is brilliant by the first film
The top-gated TG of body pipe T1 and drain electrode short circuit, the 4th scanning signal Scan4 provide low potential, and the 5th thin film transistor (TFT) T5 is closed
It closes, the data-signal Data offer preset potentials Vpre, the first capacitance C1 charge, section point B namely the first film
The bottom gate BG write-ins preset potential Vpre, first node T of transistor T1 and the top of fourth node D namely first film transistor T1
Grid TG and drain electrode write-in supply voltage VDD.
Step 4, into threshold voltage programming phases 3.
With reference to Fig. 2 and Fig. 5, described first, the 3rd and the 4th scanning signal Scan1, Scan3, Scan4 provide low potential,
Secondth, the 4th and the 5th thin film transistor (TFT) T2, T4, T5 is closed, and the second scanning signal Scan2 provides high potential, and the 3rd is thin
Film transistor T3 is opened, and the data-signal Data provides preset potential Vpre, due to the memory action of the first capacitance C1, second
The bottom gate BG of node B namely first film transistor T1 maintains preset potential Vpre, first node T and fourth node D namely the
The top-gated TG of one thin film transistor (TFT) T1 and drain electrode are at this time supply voltage VDD, due to the characteristic of double-gate film transistor, at this time
The threshold voltage of first film transistor T1 is minimum, and first film transistor T1 is opened, first node T and fourth node D namely
The top-gated TG of first film transistor T1 and the voltage of drain electrode constantly reduce at any time, the threshold voltage of first film transistor T1
Constantly rise, when the threshold voltage of first film transistor T1 reaches Vth=VBG- Vs=Vpre-VOLEDWhen, wherein Vth is the
The threshold voltage of one thin film transistor (TFT) T1, VBGFor the bottom gate voltage of first film transistor T1, Vs is that the 3rd node S i.e. first is thin
The source voltage of film transistor T1, Vpre are preset potential, VOLEDFor the threshold voltage of Organic Light Emitting Diode D1, the first film
The threshold voltage of transistor T1 no longer changes, and the voltage of the top-gated TG of first node T namely first film transistor T1 is deposited at this time
Storage is in the second capacitance C2.
Step 5, into driving glow phase 4.
With reference to Fig. 2 and Fig. 6, described first and the 3rd scanning signal Scan1, Scan3 provide high potential, second and the 4th
Thin film transistor (TFT) T2, T4 open, second and the 4th scanning signal Scan2, Scan4 provide low potential, the 3rd and the 5th film
Transistor T3, T5 are closed, and the output of memory module 240 adjusts the data-signal Data after compensation, and digital-to-analogue is done through digital analog converter 250
The source electrode for converting backward second thin film transistor (TFT) T2 provides display data signal high potential Vdata, display data signal high potential
The bottom gate BG of Vdata write-in section points B, that is, first film transistor T1, the top of first node T, that is, first film transistor T1
The voltage value of grid TG remains unchanged under the memory action of the second capacitance C2, and the threshold voltage for maintaining first film transistor T1 is
Vth=Vpre-VOLED, first film transistor T1 conductings, Organic Light Emitting Diode D1 shines.
Further, it is known that calculating the formula of electric current for flowing through Organic Light Emitting Diode D1 is：
I=1/2Cox (μ W/L) (Vgs-Vth)2 (1)
Wherein I be flow through Organic Light Emitting Diode D1 electric current, μ be drive the carrier mobility of thin film transistor (TFT), W and
Between L is respectively the width for the raceway groove for driving thin film transistor (TFT) and length, Vgs are driving thin film transistor (TFT) bottom-gate and source electrode
Voltage, Vth be driving thin film transistor (TFT) threshold voltage namely first film transistor T1 threshold voltage,
And Vgs=Vdata-VOLED (2)
Wherein Vdata is to adjust the display data signal high potential that the data-signal Data after compensating is provided,
(2) formula substitution (1) formula is obtained：
I=1/2Cox (μ W/L) (Vdata-VOLED–Vpre+VOLED)2
=1/2Cox (μ W/L) (Vdata-Vpre)2
It can be seen that flow through the electric current of Organic Light Emitting Diode D1 and the threshold voltage of the first film transistor T1 and organic
The threshold voltage of light emitting diode D1 is unrelated, ensure that the stability for the electric current for flowing through Organic Light Emitting Diode D1, Neng Goubao
It is uniform to demonstrate,prove the luminosity of Organic Light Emitting Diode, improves the display effect of picture.
The present invention OLED pixel mixed compensation method first with external compensation mode come compensate Organic Light Emitting Diode due to
Degradation and the brightness irregularities triggered, then threshold voltage shift is compensated with internal compensation mode, it is fast to have the speed of service concurrently
With compensation range it is big the characteristics of, have better compensation effect.
In conclusion the OLED pixel mixed compensation circuit of the present invention and mixed compensation method, use 5T2C structures and drive
Dynamic thin film transistor (TFT) compensates threshold voltage shift for the pixel internal drive circuits of double-gate film transistor, uses external mend
Circuit is repaid to compensate the brightness irregularities that Organic Light Emitting Diode triggers due to degradation, combines internal compensation operation speed
Degree soon with external compensation compensation range it is big the characteristics of, have better compensation effect, data-signal can be simplified, ensure to pass through
The stability of OLED current realizes that the luminosity of panel is uniform.
The above, for those of ordinary skill in the art, can be with technique according to the invention scheme and technology
Other various corresponding changes and deformation are made in design, and all these changes and deformation should all belong to the appended right of the present invention
It is required that protection domain.
Claims (10)
1. a kind of OLED pixel mixed compensation circuit, which is characterized in that including pixel internal drive circuits (100) and with it is described
The external compensation circuit (200) that pixel internal drive circuits (100) are electrical connected；
The pixel internal drive circuits (100) include：First film transistor (T1), the second thin film transistor (TFT) (T2), the 3rd
Thin film transistor (TFT) (T3), the 4th thin film transistor (TFT) (T4), the 5th thin film transistor (TFT) (T5), the first capacitance (C1), the second capacitance
(C2) and Organic Light Emitting Diode (D1)；
First film transistor (T1) is double-gate film transistor, for driving Organic Light Emitting Diode (D1), top-gated
(TG) first node (T) is electrically connected, bottom gate (BG) is electrically connected section point (B), and source electrode is electrically connected the 3rd node (S),
Drain electrode is electrically connected fourth node (D)；
The grid of second thin film transistor (TFT) (T2) accesses the first scanning signal (Scan1), source electrode incoming data signal (Data), leakage
Pole is electrically connected section point (B)；
The grid of 3rd thin film transistor (TFT) (T3) accesses the second scanning signal (Scan2), and source electrode is electrically connected fourth node (D),
Drain electrode is electrically connected first node (T)；
The grid of 4th thin film transistor (TFT) (T4) accesses the 3rd scanning signal (Scan3), source electrode access supply voltage (VDD), leakage
Pole is electrically connected fourth node (D)；
The grid of 5th thin film transistor (TFT) (T5) accesses the 4th scanning signal (Scan4), and source electrode is electrically connected the 3rd node (S),
Drain electrode is electrically connected external compensation circuit (200)；
One end of first capacitance (C1) is electrically connected section point (B), other end ground connection；
One end of second capacitance (C2) is electrically connected first node (T), other end ground connection；
The anode of Organic Light Emitting Diode (D1) is electrically connected the 3rd node (S), minus earth；
The external compensation circuit (200) includes：The analog-digital converter (210) that is sequentially connected in series, data search module (220), control
Molding block (230), memory module (240) and digital analog converter (250)；
The input terminal of analog-digital converter (210) is electrically connected the drain electrode of the 5th thin film transistor (TFT) (T5), and output terminal is electrically connected number
According to the input terminal of searching module (220)；
The output terminal of data search module (220) is electrically connected the input terminal of control module (230)；
The output terminal of control module (230) is electrically connected the input terminal of memory module (240)；
The output terminal of memory module (240) is electrically connected the input terminal of digital analog converter (250)；
The output terminal (250) of digital analog converter is electrically connected the source electrode of the second thin film transistor (TFT) (T2)；
In the data search module (220) the aging current data of preset Organic Light Emitting Diode and with organic light emission two
The one-to-one output voltage difference value of aging current data of pole pipe.
2. OLED pixel mixed compensation circuit as described in claim 1, which is characterized in that the external compensation circuit (200)
Further include operational amplifier (260) and the 3rd capacitance (C3)；
The first input end of the operational amplifier (260) is electrically connected the drain electrode of the 5th thin film transistor (TFT) (T5), the second input
End ground connection, output terminal are electrically connected the input terminal of analog-digital converter (210)；
One end of 3rd capacitance (C3) is electrically connected the first input end of operational amplifier (260), and the other end is electrically connected
The output terminal of operational amplifier (260).
3. OLED pixel mixed compensation circuit as described in claim 1, which is characterized in that the first film transistor
(T1), the second thin film transistor (TFT) (T2), the 3rd thin film transistor (TFT) (T3), the 4th thin film transistor (TFT) (T4) and the 5th film crystal
It is low-temperature polysilicon film transistor, oxide semiconductor thin-film transistor or amorphous silicon film transistor to manage (T5).
4. OLED pixel mixed compensation circuit as described in claim 1, which is characterized in that first scanning signal
(Scan1), the second scanning signal (Scan2), the 3rd scanning signal (Scan3) and the 4th scanning signal (Scan4) are by outer
Portion's time schedule controller provides.
5. OLED pixel mixed compensation circuit as described in claim 1, which is characterized in that first scanning signal
(Scan1), the second scanning signal (Scan2), the 3rd scanning signal (Scan3), the 4th scanning signal (Scan4) and data letter
Number (Data) is combined, successively corresponding to an external compensation stage (1), a pre-charging stage (2), a threshold voltage programming phases
(3) and one drives glow phase (4)；
In the external compensation stage (1), first, second, third scanning signal (Scan1, Scan2, Scan3) and number
It is believed that number (Data) is provided which low potential, the 4th scanning signal (Scan4) provides high potential；
In the pre-charging stage (2), described first, second and the 3rd scanning signal (Scan1, Scan2, Scan3) be provided which
High potential, the 4th scanning signal (Scan4) provide low potential, and the data-signal (Data) provides preset potential
(Vpre)；
In the threshold voltage programming phases (3), the scanning signal (Scan1, Scan3, Scan4) of described first, the 3rd and the 4th
It is provided which low potential, second scanning signal (Scan2) provides high potential, and the data-signal (Data) provides preset potential
(Vpre)；
In the driving glow phase (4), described first and the 3rd scanning signal (Scan1, Scan3) be provided which high potential, the
Two and the 4th scanning signal (Scan2, Scan4) is provided which low potential, and the data-signal (Data) provides display data signal
High potential (Vdata).
6. OLED pixel mixed compensation circuit as claimed in claim 5, which is characterized in that the preset potential (Vpre) is less than
Display data signal high potential (Vdata).
A kind of 7. OLED pixel mixed compensation method, which is characterized in that include the following steps：
Step 1 provides OLED pixel mixed compensation circuit；
The OLED pixel mixed compensation circuit is electric including pixel internal drive circuits (100) and with the pixel internal drive
The external compensation circuit (200) that road (100) is electrical connected；
The pixel internal drive circuits (100) include：First film transistor (T1), the second thin film transistor (TFT) (T2), the 3rd
Thin film transistor (TFT) (T3), the 4th thin film transistor (TFT) (T4), the 5th thin film transistor (TFT) (T5), the first capacitance (C1), the second capacitance
(C2) and Organic Light Emitting Diode (D1)；
First film transistor (T1) is double-gate film transistor, for driving Organic Light Emitting Diode (D1), top-gated
(TG) first node (T) is electrically connected, bottom gate (BG) is electrically connected section point (B), and source electrode is electrically connected the 3rd node (S),
Drain electrode is electrically connected fourth node (D)；
The grid of second thin film transistor (TFT) (T2) accesses the first scanning signal (Scan1), source electrode incoming data signal (Data), leakage
Pole is electrically connected section point (B)；
The grid of 3rd thin film transistor (TFT) (T3) accesses the second scanning signal (Scan2), and source electrode is electrically connected fourth node (D),
Drain electrode is electrically connected first node (T)；
The grid of 4th thin film transistor (TFT) (T4) accesses the 3rd scanning signal (Scan3), source electrode access supply voltage (VDD), leakage
Pole is electrically connected fourth node (D)；
The grid of 5th thin film transistor (TFT) (T5) accesses the 4th scanning signal (Scan4), and source electrode is electrically connected the 3rd node (S),
Drain electrode is electrically connected external compensation circuit (200)；
One end of first capacitance (C1) is electrically connected section point (B), other end ground connection；
One end of second capacitance (C2) is electrically connected first node (T), other end ground connection；
The anode of Organic Light Emitting Diode (D1) is electrically connected the 3rd node (S), minus earth；
The external compensation circuit (200) includes：The analog-digital converter (210) that is sequentially connected in series, data search module (220), control
Molding block (230), memory module (240) and digital analog converter (250)；
The input terminal of analog-digital converter (210) is electrically connected the drain electrode of the 5th thin film transistor (TFT) (T5), and output terminal is electrically connected number
According to the input terminal of searching module (220)；
The output terminal of data search module (220) is electrically connected the input terminal of control module (230)；
The output terminal of control module (230) is electrically connected the input terminal of memory module (240)；
The output terminal of memory module (240) is electrically connected the input terminal of digital analog converter (250)；
The output terminal (250) of digital analog converter is electrically connected the source electrode of the second thin film transistor (TFT) (T2)；
In the data search module (220) the aging current data of preset Organic Light Emitting Diode and with organic light emission two
The one-to-one output voltage difference value of aging current data of pole pipe；
Step 2, into external compensation stage (1)；
First, second, third scanning signal (Scan1, Scan2, Scan3) and data-signal (Data) are provided which low electricity
Position, second, third and the 4th thin film transistor (TFT) (T2, T3, T4) are turned off, and the 4th scanning signal (Scan4) provides high electricity
Position, the 5th thin film transistor (TFT) (T5) are opened, and flow through the electric current input analog-to-digital converter (210) of Organic Light Emitting Diode (D1), warp
The actual current signal input data searching module (220) of Organic Light Emitting Diode (D1), data search are flowed through after analog-to-digital conversion
Module (220) will flow through the actual current signal of Organic Light Emitting Diode (D1) and the aging electricity of preset Organic Light Emitting Diode
Flow data obtains corresponding output voltage difference value after being compared, and control module (230) is according to the output voltage difference
Value adjusts offset data signal (Data), and will adjust data-signal (Data) the deposit memory module (240) after compensating；
Step 3, into pre-charging stage (2)；
Described first, second and the 3rd scanning signal (Scan1, Scan2, Scan3) be provided which high potential, second, third and
4th thin film transistor (TFT) (T2, T3, T4) is opened, and the 3rd thin film transistor (TFT) (T3) of conducting is by the top of first film transistor (T1)
Grid (TG) and drain electrode short circuit, the 4th scanning signal (Scan4) provide low potential, and the 5th thin film transistor (TFT) (T5) is closed, institute
It states data-signal (Data) and preset potential (Vpre) is provided, the first capacitance (C1) charges, section point (B) i.e. the first film
Bottom gate (BG) the write-in preset potential (Vpre) of transistor (T1), first node (T) and fourth node (D) i.e. the first film crystal
Manage the top-gated (TG) of (T1) and drain electrode write-in supply voltage (VDD)；
Step 4, into threshold voltage programming phases (3)；
The scanning signal (Scan1, Scan3, Scan4) of described first, the 3rd and the 4th provides low potential, and the second, the 4th and the
Five thin film transistor (TFT)s (T2, T4, T5) are closed, and second scanning signal (Scan2) provides high potential, the 3rd thin film transistor (TFT)
(T3) open, the data-signal (Data) provides preset potential (Vpre), first node (T) and fourth node (D) i.e. first
The top-gated (TG) of thin film transistor (TFT) (T1) constantly reduces at any time with the voltage to drain, the threshold value electricity of first film transistor (T1)
Pressure constantly rise, when the threshold voltage of first film transistor (T1) reaches Vth=Vpre-VOLEDWhen, wherein Vth is thin for first
The threshold voltage of film transistor (T1), Vpre are preset potential, VOLEDFor the threshold voltage of Organic Light Emitting Diode (D1), first
The threshold voltage of thin film transistor (TFT) (T1) no longer changes, and the voltage of the top-gated (TG) of first film transistor (T1) is stored at this time
In second capacitance (C2)；
Step 5, into driving glow phase (4)；
Described first and the 3rd scanning signal (Scan1, Scan3) high potential is provided, second and the 4th thin film transistor (TFT) (T2,
T4) open, second and the 4th scanning signal (Scan2, Scan4) provide low potential, the 3rd and the 5th thin film transistor (TFT) (T3,
T5) close, memory module (240) output adjusts the data-signal (Data) after compensation, and doing digital-to-analogue through digital analog converter (250) turns
The source electrode for changing backward second thin film transistor (TFT) (T2) provides display data signal high potential (Vdata), the high electricity of display data signal
Position (Vdata) write-in section point (B) the i.e. bottom gate (BG) of first film transistor (T1), first node (T) i.e. the first film
The voltage value of the top-gated (TG) of transistor (T1) remains unchanged under the memory action of the second capacitance (C2), maintains the first film brilliant
The threshold voltage of body pipe (T1) is Vth=Vpre-VOLED, first film transistor (T1) conducting, Organic Light Emitting Diode (D1)
It shines, and the electric current for flowing through the Organic Light Emitting Diode (D1) is unrelated with the threshold voltage of first film transistor (T1).
8. OLED pixel mixed compensation method as claimed in claim 7, which is characterized in that the external compensation circuit (200)
Further include operational amplifier (260) and the 3rd capacitance (C3)；
The first input end of the operational amplifier (260) is electrically connected the drain electrode of the 5th thin film transistor (TFT) (T5), the second input
End ground connection, output terminal are electrically connected the input terminal of analog-digital converter (210)；
One end of 3rd capacitance (C3) is electrically connected the first input end of operational amplifier (260), and the other end is electrically connected
The output terminal of operational amplifier (260)；
In the step 2, the electric current for flowing through Organic Light Emitting Diode (D1) inputs modulus turn after operational amplifier (260) amplification
The input terminal of parallel operation (210).
9. OLED pixel mixed compensation method as claimed in claim 7, which is characterized in that the first film transistor
(T1), the second thin film transistor (TFT) (T2), the 3rd thin film transistor (TFT) (T3), the 4th thin film transistor (TFT) (T4) and the 5th film crystal
It is low-temperature polysilicon film transistor, oxide semiconductor thin-film transistor or amorphous silicon film transistor to manage (T5).
10. OLED pixel mixed compensation method as claimed in claim 7, which is characterized in that first scanning signal
(Scan1), the second scanning signal (Scan2), the 3rd scanning signal (Scan3) and the 4th scanning signal (Scan4) are by outer
Portion's time schedule controller provides；The preset potential (Vpre) is less than display data signal high potential (Vdata).
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