CN106487339A - The improved method of non-resistance semiconductor integrated universal operational amplifier and its amplifier - Google Patents
The improved method of non-resistance semiconductor integrated universal operational amplifier and its amplifier Download PDFInfo
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- CN106487339A CN106487339A CN201510536152.8A CN201510536152A CN106487339A CN 106487339 A CN106487339 A CN 106487339A CN 201510536152 A CN201510536152 A CN 201510536152A CN 106487339 A CN106487339 A CN 106487339A
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Abstract
The invention discloses a kind of improved method of non-resistance semiconductor integrated universal operational amplifier and its amplifier, the various constant-current source circuits that always use now are directly substituted with the two-terminal device CRD compatible with bipolar technology in circuit, and the non-resistance semiconductor integrated universal operational amplifier of the present invention is made up of prestage, intergrade, final circuit.Non-resistance element in novel circuit, whole circuit structure are simple, and formal standard, prestage, intergrade circuit symmetrical, the component number for using are greatly decreased, and the size of CRD device is more much smaller than integrated resistor, and integration density is improved, and power consumption is reduced.There is no negative-feedback inside whole circuit, circuit transient response is greatly improved.For final stage output, it is not required that overcurrent protection, even if output terminal shortcircuit is also without compromising on whole circuit, security is improved.
Description
Technical field
The present invention relates to the novel universal operational amplifier integrated circuit based on semiconductor integrated circuit know-why
Device, the more particularly to improved method of non-resistance semiconductor integrated universal operational amplifier and its amplifier.
Background technology
General-purpose operation amplifier is a kind of Analogous Integrated Electronic Circuits being widely used.In the adhesive integrated circuit extensively
Using core devices be bipolar transistor (bipolar technological process) and MOS transistor
(MOS technological process).Wherein, bipolar transistor is current control device, in circuit
In need resistance limit, control electric current.Even if MOS transistor is voltage-controlled device, in circuit
Inevitably rational biasing is realized using resistance and load.
Design of the resistance in Analogous Integrated Electronic Circuits has become as the field normality with using.Electricity in integrated circuit
Resistance element takes larger chip area, produces power consumption (particularly quiescent dissipation), and precision is poor, power supply electricity
Pressure fluctuation causes curent change, so as to affect circuit function and performance.
Therefore, prior art be improved, it is necessary to abandon and must use CRD using the tradition of resistive arrangement
(current regulator diode) device substitutes constant-current source circuit and provides reasonably to bipolar transistor or MOS transistor
Biasing and active load, improve stabilization of operating point, obtain high-gain.
Content of the invention
It is an object of the invention to provide a kind of improved method of non-resistance semiconductor integrated universal operational amplifier
And its amplifier, constant-current source circuit is substituted to bipolar transistor or MOS with CRD (current regulator diode) device
Transistor provides rational biasing and active load, improves stabilization of operating point, obtains high-gain.
Technical scheme is as follows：
The present invention is to substitute constant-current source circuit with CRD device to provide conjunction to bipolar transistor or MOS transistor
The biasing of reason and active load, realize the general-purpose operation amplifier circuit configuration of full active device.
Therefore, the non-resistance semiconductor integrated universal operational amplifier of the present invention, it by prestage, intergrade and
Final amplifier circuit is constituted；
Pre-stage amplifiers constitute source follower-common base difference amplifier, J1, J2 by J1, J2, Q3, Q4
It is JFET；Q1, Q2, Q3, Q4 constitute emitter follower-common base difference amplifier；Before CRD1, CRD2 make
Put the active load of level output；CRD3 is biased for the fixed current of prestage；
Interstage amplifier be made up of Q3, Q4, Q5, Q6 and Q5, Q6, Q7, Q8 Darlington emitter-base bandgap grading with
With device-common-base amplifier, Q7 is the active load of Q6；CRD4 is biased for the fixed current of intergrade, CRD5
Fixed current biasing is provided for Q7, Q8 and Q9, Q10；
Final amplifier is recommending output mode, and CRD6 is Q14, Q15 or Q16, Q17 provides current offset, with
When limit Q14, Q15 or Q16, the power consumption range of Q17；CRD5, Q8 or Q10 be Q12, Q13 or Q14,
Q15 provides current offset, while limiting Q12, Q13 or Q14, the power consumption range of Q15.
With the two-terminal device compatible with bipolar technology (bipolar technological process) in the present invention
The CRD various constant-current source circuits that directly replacement is used now always in circuit, non-resistance element in novel circuit,
Whole circuit structure is simple, formal standard, and (symmetrical degree height is conducive to losing for prestage, intergrade circuit symmetrical
Adjust electric current, offset voltage, the improvement of the core parameter such as common-mode rejection ratio), the component number for using significantly subtracts
Few, the size of CRD device is more much smaller than integrated resistor, and integration density is improved, and power consumption is reduced.Due to CRD
Constant restriction effect of the device to electric current, defines the working condition scope of each transistor, it is not necessary to again plus respectively
Negative-feedback circuit regulation and control are planted, inside whole circuit, there is no negative-feedback, circuit transient response is greatly improved.For end
For level output, as CRD5, CRD6 define the scope of driving current, output current is also just defined
Scope, it is not necessary to overcurrent protection, even if output end load short circuits are also without compromising on whole circuit, security is carried
High.
This non-resistance semiconductor integrated universal operational amplifier techniques feature of the present invention is in the following areas：
The active circuit structure of non-resistance.The component number for using is greatly decreased, the size ratio of CRD device
Integrated resistor is much smaller, and integration density is improved.Constant restriction effect of the CRD device to electric current, defines each
The working condition scope of individual transistor.Complete with two polar-type fabrication process (bipolar technological process)
Complete compatible.Adjusting device parameter, can obtain different circuit engineering indexs.
Description of the drawings
Fig. 1 is the JFET high impedance input circuit structure of the present invention；
Fig. 2 is the low imbalance input circuit structure of the present invention；
Fig. 3 is operational amplifier symbol；
Fig. 4 is CRD characteristic schematic diagram；
Fig. 5 is that the internal circuit of the present invention divides schematic diagram；
Fig. 6 is that PNP transistor active load and output are promoted；
Fig. 7 is transistor multicollector form schematic diagram.
Specific embodiment
The present invention is described in further detail with reference to the accompanying drawings and examples.
As shown in figure 1, according to general-purpose operation amplifier principle and composition structure, the non-resistance semiconductor of the present invention
Integrated universal operational amplifier is made up of prestage, intergrade, final circuit.Tied according to the circuit of Fig. 1-Fig. 5
Structure, pre-stage amplifiers, Fig. 1：J1, J2, Q3, Q4 constitute source follower-common base difference amplifier,
J1, J2 are JFET, with high input impedance (10M Ω).Fig. 2:Q1, Q2, Q3, Q4 constitute emitter following
Device-common base difference amplifier.CRD1, CRD2 make the active load of prestage output, obtain high-gain；
CRD3 is biased for the fixed current of prestage.
Interstage amplifier, by Q3, Q4, Q5, Q6 (Q5, Q6, Q7, Q8 in Fig. 2) in Fig. 1
Constitute darlington emitter follower-common-base amplifier.Q7 is the active load of Q6.CRD4 is intergrade
Fixed current biasing, CRD5 be Q7, Q8 (Q9, Q10 in Fig. 2) provide fixed current biasing.
Final stage is recommending output mode.CRD6 is that Q14, Q15 (Q16, Q17 of Fig. 2) provide current offset, same to time limit
Determine the power consumption range of Q14, Q15 (Q16, Q17 of Fig. 2)；CRD5, Q8 (Q10 in Fig. 2) are
Q12, Q13 (Q14, Q15 of Fig. 2) provide current offset, while restriction Q12, Q13 (Q14 of Fig. 2,
Q15 power consumption range (see Fig. 6)).
In Fig. 6：
2βIB=IC7+IC8.
CRD5 secures the base current of Q7, Q8 (Q9, Q10 in Fig. 2) and Q7, Q8 (Fig. 2
In Q9, Q10) maximum collector current of transistor and scope be defined, the promotion electric current of output stage
It is defined, that is to say, that there is overcurrent protection link for output transistor.In integrated circuits
Q7, Q8 (Q9, Q10 in Fig. 2) transistor can be designed to multicollector form (see Fig. 7), i.e., solid
Determined collector current and.Its effect is the same.Fig. 7 is transistor multicollector form schematic diagram (with figure
6 have equivalent principle, can use Fig. 6 equivalent expressions).
In Fig. 7：
IC=β IB=β ICRD=IIn C+ICout.
Electric circuit characteristic explanation：Prestage and intergrade be coupled as both-end output (prestage), double-width grinding (in
Intercaste), symmetry is good.According to the characteristic of differential amplifier circuit, symmetry is conducive to well offset voltage, imbalance
The improvement of the operational amplifier important technology index such as electric current, common-mode rejection ratio；As CRD device is to electric current
Constant restriction effect, defines the working condition scope of each transistor, it is not necessary to again plus various negative-feedback circuits
Regulation and control, do not have negative-feedback inside whole circuit, circuit transient response is greatly improved.
Circuit arrangement simulating, verifying explanation：According to most conventional bipolar semiconductor process conditions (5 micron pitch,
Live width design rule), NPN transistor model major parameter β=(50-120), fT=100MHZ；Laterally
PNP transistor model major parameter β=(4-6), fT=1MHZ, ICM=(100-200) μ A；
VCC/VEE=± 12V-- ± 30V；The electric current of CRD is configured to each respectively on request from 80 microamperes 1 milliampere
Individual transistor；Obtain open-loop gain and be more than 100,000 times (80dB), open-loop bandwidth 1KHZ, common-mode rejection ratio
100dB, 10 μ V of offset voltage, offset current 6nA, maximum voltage output amplitude Vpp=± 11V-- ± 29V.
Change to available circuit structure design rule：Analogous Integrated Electronic Circuits circuit structure design principle points out, is
Raising circuit level and parameter tolerances, as far as possible using active device, reduce passive element (R, C, L)
Use.The present invention has abandoned resistive arrangement, finally achieves the circuit structure of full active device, while existing electricity
Some adjunct circuits in the scheme of road can be cancelled, and become apparent from mentality of designing, the intelligibility of circuit theory
Improve.Find out that, under most conventional process conditions, the technical indicator of circuit is excellent from the result of circuit arrangement emulation
In existing like product, if under finer process conditions, technique effect can be more preferably.
Certainly, the concrete application example of the above simply present invention, the present invention also have other embodiments, all employings etc.
With the technical scheme that replaces or equivalent transformation is formed, all fall within protection domain of the presently claimed invention.
Claims (2)
1. a kind of improved method of non-resistance semiconductor integrated universal operational amplifier, it is characterised in that：Constant-current source circuit is substituted with CRD device and rational biasing and active load is provided to bipolar transistor or MOS transistor, realize the common voltage operational amplifier circuit structure of full active device.
2. the integrated voltage general-purpose operation amplifier of a kind of non-resistance semiconductor, it is characterised in that：It is made up of prestage, intergrade and final amplifier circuit；
Pre-stage amplifiers constitute source follower-common base difference amplifier by J1, J2, Q3, Q4, and J1, J2 are JFET；Q1, Q2, Q3,
Q4 constitutes emitter follower-common base difference amplifier；CRD1, CRD2 make the active load of prestage output；CRD3 is biased for the fixed current of prestage；
Interstage amplifier constitutes darlington emitter follower-common-base amplifier by Q3, Q4, Q5, Q6 or Q5, Q6, Q7, Q8, and Q7 is the active load of Q6；CRD4 is biased for the fixed current of intergrade, and CRD5 is Q7, Q8 or Q9, Q10 provides fixed current biasing；
Final amplifier is recommending output mode, and CRD6 is Q14, Q15 or Q16, Q17 provides current offset, while limiting Q14, Q15 or Q16, the power consumption range of Q17；CRD5, Q8 or Q10 are Q12, Q13 or Q14, Q15 provides current offset, while limiting Q12, Q13 or Q14, the power consumption range of Q15.
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| CN201510536152.8A CN106487339A (en) | 2015-08-28 | 2015-08-28 | The improved method of non-resistance semiconductor integrated universal operational amplifier and its amplifier |
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| CN201510536152.8A CN106487339A (en) | 2015-08-28 | 2015-08-28 | The improved method of non-resistance semiconductor integrated universal operational amplifier and its amplifier |
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|---|---|---|---|---|
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| JPH06120747A (en) * | 1992-10-09 | 1994-04-28 | Kenwood Corp | Differential amplifier |
| JPH0634322U (en) * | 1992-10-06 | 1994-05-06 | 秀夫 大西 | Power amplifier |
| US6535067B1 (en) * | 2001-09-14 | 2003-03-18 | Northrop Grumman Corporation | Power saturation control of class C bipolar amplifiers |
| CN1556585A (en) * | 2004-01-07 | 2004-12-22 | 杨汝鹏 | Output stage circuit of power amplifier |
| CN101651449A (en) * | 2009-09-03 | 2010-02-17 | 上海博为光电科技有限公司 | Optical input preamplifier for optical communication receiver |
| CN101668365A (en) * | 2008-09-05 | 2010-03-10 | 李旭明 | Constant-current source driver circuit and device |
| JP2010085384A (en) * | 2008-07-30 | 2010-04-15 | Fujio Ozawa | Range switching circuit |
| CN201904960U (en) * | 2010-12-29 | 2011-07-20 | 贵州煜立电子科技有限公司 | LED drive circuit capable of improving quality of LED drive circuit |
| CN103117718A (en) * | 2013-01-31 | 2013-05-22 | 桂林电子科技大学 | High-fidelity transistor audio power amplifier |
| JP2013255146A (en) * | 2012-06-08 | 2013-12-19 | Hitachi Ltd | Semiconductor device |
| CN204886879U (en) * | 2015-08-28 | 2015-12-16 | 贵州煜立电子科技有限公司 | General operational amplifier of integrated voltage of non -resistance semiconductor |
-
2015
- 2015-08-28 CN CN201510536152.8A patent/CN106487339A/en active Pending
Patent Citations (12)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4801893A (en) * | 1986-09-10 | 1989-01-31 | Frank L. VanAlstine | Forward transimpedance amplifier |
| JPH0634322U (en) * | 1992-10-06 | 1994-05-06 | 秀夫 大西 | Power amplifier |
| JPH06120747A (en) * | 1992-10-09 | 1994-04-28 | Kenwood Corp | Differential amplifier |
| US6535067B1 (en) * | 2001-09-14 | 2003-03-18 | Northrop Grumman Corporation | Power saturation control of class C bipolar amplifiers |
| CN1556585A (en) * | 2004-01-07 | 2004-12-22 | 杨汝鹏 | Output stage circuit of power amplifier |
| JP2010085384A (en) * | 2008-07-30 | 2010-04-15 | Fujio Ozawa | Range switching circuit |
| CN101668365A (en) * | 2008-09-05 | 2010-03-10 | 李旭明 | Constant-current source driver circuit and device |
| CN101651449A (en) * | 2009-09-03 | 2010-02-17 | 上海博为光电科技有限公司 | Optical input preamplifier for optical communication receiver |
| CN201904960U (en) * | 2010-12-29 | 2011-07-20 | 贵州煜立电子科技有限公司 | LED drive circuit capable of improving quality of LED drive circuit |
| JP2013255146A (en) * | 2012-06-08 | 2013-12-19 | Hitachi Ltd | Semiconductor device |
| CN103117718A (en) * | 2013-01-31 | 2013-05-22 | 桂林电子科技大学 | High-fidelity transistor audio power amplifier |
| CN204886879U (en) * | 2015-08-28 | 2015-12-16 | 贵州煜立电子科技有限公司 | General operational amplifier of integrated voltage of non -resistance semiconductor |
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Application publication date: 20170308 |