CN106486289A - A kind of POSS modifies the preparation method of CdTe quantum sensitization solar battery - Google Patents
A kind of POSS modifies the preparation method of CdTe quantum sensitization solar battery Download PDFInfo
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- 229910004613 CdTe Inorganic materials 0.000 title claims abstract description 153
- 206010070834 Sensitisation Diseases 0.000 title claims abstract description 22
- 238000002360 preparation method Methods 0.000 title claims abstract description 22
- 230000008313 sensitization Effects 0.000 title claims abstract description 22
- 239000002096 quantum dot Substances 0.000 claims abstract description 45
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N titanium dioxide Inorganic materials O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 claims abstract description 42
- 239000000843 powder Substances 0.000 claims abstract description 29
- 238000000034 method Methods 0.000 claims abstract description 11
- 239000008346 aqueous phase Substances 0.000 claims abstract description 9
- 238000010992 reflux Methods 0.000 claims abstract description 9
- 239000000243 solution Substances 0.000 claims description 55
- 238000003756 stirring Methods 0.000 claims description 20
- 238000000746 purification Methods 0.000 claims description 18
- 239000004408 titanium dioxide Substances 0.000 claims description 16
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims description 14
- 239000003792 electrolyte Substances 0.000 claims description 11
- YKYOUMDCQGMQQO-UHFFFAOYSA-L Cadmium chloride Inorganic materials Cl[Cd]Cl YKYOUMDCQGMQQO-UHFFFAOYSA-L 0.000 claims description 6
- 229910004273 TeO3 Inorganic materials 0.000 claims description 6
- 239000007864 aqueous solution Substances 0.000 claims description 6
- 239000012456 homogeneous solution Substances 0.000 claims description 6
- 239000002243 precursor Substances 0.000 claims description 5
- 239000003795 chemical substances by application Substances 0.000 claims description 4
- 238000005119 centrifugation Methods 0.000 claims description 3
- 238000012869 ethanol precipitation Methods 0.000 claims description 2
- 230000004048 modification Effects 0.000 abstract description 19
- 238000012986 modification Methods 0.000 abstract description 19
- 230000009466 transformation Effects 0.000 abstract description 8
- 230000006798 recombination Effects 0.000 abstract description 4
- 238000005215 recombination Methods 0.000 abstract description 4
- 230000007547 defect Effects 0.000 abstract description 3
- 239000003504 photosensitizing agent Substances 0.000 abstract description 3
- 229960005196 titanium dioxide Drugs 0.000 description 14
- 235000010215 titanium dioxide Nutrition 0.000 description 14
- PWKSKIMOESPYIA-BYPYZUCNSA-N L-N-acetyl-Cysteine Chemical compound CC(=O)N[C@@H](CS)C(O)=O PWKSKIMOESPYIA-BYPYZUCNSA-N 0.000 description 11
- HEMHJVSKTPXQMS-UHFFFAOYSA-M Sodium hydroxide Chemical compound [OH-].[Na+] HEMHJVSKTPXQMS-UHFFFAOYSA-M 0.000 description 6
- 239000007822 coupling agent Substances 0.000 description 5
- 229910018557 Si O Inorganic materials 0.000 description 4
- 229910002808 Si–O–Si Inorganic materials 0.000 description 4
- 238000006243 chemical reaction Methods 0.000 description 4
- 238000002347 injection Methods 0.000 description 4
- 239000007924 injection Substances 0.000 description 4
- LIVNPJMFVYWSIS-UHFFFAOYSA-N silicon monoxide Inorganic materials [Si-]#[O+] LIVNPJMFVYWSIS-UHFFFAOYSA-N 0.000 description 4
- OGIDPMRJRNCKJF-UHFFFAOYSA-N titanium oxide Inorganic materials [Ti]=O OGIDPMRJRNCKJF-UHFFFAOYSA-N 0.000 description 4
- 230000008901 benefit Effects 0.000 description 3
- 230000008859 change Effects 0.000 description 3
- 239000000463 material Substances 0.000 description 3
- 239000002245 particle Substances 0.000 description 3
- 238000011160 research Methods 0.000 description 3
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 description 2
- 238000005033 Fourier transform infrared spectroscopy Methods 0.000 description 2
- 230000005540 biological transmission Effects 0.000 description 2
- 238000010351 charge transfer process Methods 0.000 description 2
- 238000001035 drying Methods 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 238000001453 impedance spectrum Methods 0.000 description 2
- 239000007788 liquid Substances 0.000 description 2
- 238000012360 testing method Methods 0.000 description 2
- JBOIAZWJIACNJF-UHFFFAOYSA-N 1h-imidazole;hydroiodide Chemical group [I-].[NH2+]1C=CN=C1 JBOIAZWJIACNJF-UHFFFAOYSA-N 0.000 description 1
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 1
- NINIDFKCEFEMDL-UHFFFAOYSA-N Sulfur Chemical compound [S] NINIDFKCEFEMDL-UHFFFAOYSA-N 0.000 description 1
- 238000010521 absorption reaction Methods 0.000 description 1
- 238000000862 absorption spectrum Methods 0.000 description 1
- 230000003064 anti-oxidating effect Effects 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 230000008033 biological extinction Effects 0.000 description 1
- 230000033228 biological regulation Effects 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 239000006227 byproduct Substances 0.000 description 1
- 239000007795 chemical reaction product Substances 0.000 description 1
- 239000003153 chemical reaction reagent Substances 0.000 description 1
- 238000004140 cleaning Methods 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 239000002131 composite material Substances 0.000 description 1
- 230000007797 corrosion Effects 0.000 description 1
- 238000005260 corrosion Methods 0.000 description 1
- 230000007812 deficiency Effects 0.000 description 1
- 230000005611 electricity Effects 0.000 description 1
- 239000007772 electrode material Substances 0.000 description 1
- 238000005868 electrolysis reaction Methods 0.000 description 1
- 230000007613 environmental effect Effects 0.000 description 1
- 238000011049 filling Methods 0.000 description 1
- 239000010408 film Substances 0.000 description 1
- 238000009432 framing Methods 0.000 description 1
- 230000006870 function Effects 0.000 description 1
- 238000007306 functionalization reaction Methods 0.000 description 1
- 229910021389 graphene Inorganic materials 0.000 description 1
- 238000005286 illumination Methods 0.000 description 1
- 239000013385 inorganic framework Substances 0.000 description 1
- 230000007774 longterm Effects 0.000 description 1
- 239000002105 nanoparticle Substances 0.000 description 1
- 125000000962 organic group Chemical group 0.000 description 1
- 230000032696 parturition Effects 0.000 description 1
- 238000001556 precipitation Methods 0.000 description 1
- 238000012545 processing Methods 0.000 description 1
- 239000007784 solid electrolyte Substances 0.000 description 1
- 229910052950 sphalerite Inorganic materials 0.000 description 1
- 230000006641 stabilisation Effects 0.000 description 1
- 238000011105 stabilization Methods 0.000 description 1
- 125000001424 substituent group Chemical group 0.000 description 1
- 229910052717 sulfur Inorganic materials 0.000 description 1
- 239000011593 sulfur Substances 0.000 description 1
- 238000004381 surface treatment Methods 0.000 description 1
- 238000003786 synthesis reaction Methods 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01G—CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES, LIGHT-SENSITIVE OR TEMPERATURE-SENSITIVE DEVICES OF THE ELECTROLYTIC TYPE
- H01G9/00—Electrolytic capacitors, rectifiers, detectors, switching devices, light-sensitive or temperature-sensitive devices; Processes of their manufacture
- H01G9/20—Light-sensitive devices
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01G—CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES, LIGHT-SENSITIVE OR TEMPERATURE-SENSITIVE DEVICES OF THE ELECTROLYTIC TYPE
- H01G9/00—Electrolytic capacitors, rectifiers, detectors, switching devices, light-sensitive or temperature-sensitive devices; Processes of their manufacture
- H01G9/20—Light-sensitive devices
- H01G9/2054—Light-sensitive devices comprising a semiconductor electrode comprising AII-BVI compounds, e.g. CdTe, CdSe, ZnTe, ZnSe, with or without impurities, e.g. doping materials
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K30/00—Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K30/00—Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation
- H10K30/80—Constructional details
- H10K30/81—Electrodes
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/542—Dye sensitized solar cells
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/549—Organic PV cells
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Abstract
The invention discloses a kind of POSS modifies the preparation method of CdTe quantum sensitization solar battery.The method is to prepare CdTe quantum powder using Aqueous phase condensing reflux；Then POSS is modified CdTe quantum surface, the CdTe quantum after modifying by the use of POSS is assembled into quantum dot sensitized solaode as photosensitizer.The method is a kind of preparation method of the OA POSS modification CdTe quantum sensitization solar battery of simple possible, solves the problems, such as that between quantum dot stability difference and light anode and quantum dot interface, electron-hole recombinations are serious.In CdTe quantum surface modification OA POSS, the photoelectric characteristic of CdTe quantum can be changed, effectively be passivated quantum dot, reduce the defect of quantum dot surface, the stability increasing quantum dot is so that electronics is more effectively injected into TiO2In, and then improve photoelectric transformation efficiency and the stability of quantum dot sensitized solaode.
Description
Technical field
The invention belongs to area of solar cell, specifically a kind of POSS modification CdTe quantum sensitization solar battery
Preparation method.
Background technology
Solar energy have the characteristics that to take endless, green cleaning, be to solve the energy of facing mankind and the reason of environmental problem
The new green power thought.In Solar use, solaode is so that it is safe and reliable, noiseless, pollution-free, energy everywhere
The advantages of can obtain and receive much concern.Quantum dot sensitized solaode is third generation novel solar battery, with its theoretical transformation
Efficiency is up to 66% and is referred to as the solaode of most research potential, and quantum dot sensitized solaode has uniqueness simultaneously
Multiple exciton effect, the advantage such as cheap and processing technology is simple.As light capture agent, there have to be much unique for wherein quantum dot
Advantage, the particle size of quantum dot can be controlled by changing synthesis condition, thus realizing the regulation and control to absorption spectrum ranges；Amount
Son point has larger extinction coefficient, can absorb substantial amounts of photon；There is multiple exciton effect in quantum dot, can improve solar-electricity
The photoelectric current in pond and photoelectric transformation efficiency.
At present, the photoelectric transformation efficiency of quantum dot sensitized solaode is relatively low, therefore prepares high conversion efficiency and height is steady
Qualitatively quantum dot sensitized solaode becomes the common objective of research worker.Optimize the type of quanta point material and size,
The selection of electrode conductance, the surface treatment to electrode material and electrolyte, are all to improve quantum dot sensitized solaode to turn
Change the feasible method of efficiency.
POSS is the abbreviation of polyhedral oligomeric silsesquioxane, and it is a kind of nanometer comprising organic-inorganic hybrid structure
Material, inorganic framework is the cage structure being made up of Si-O-Si key, the upper organic substituent group with several functions of Si.
Organic group in POSS can be used as the avtive spot of further functionalization, and the Si-O-Si cage structure of rigidity enhances
The heat stability of POSS, hot mechanicalness, the advantageous property such as the antioxidation of POSS and corrosion resistance in addition, POSS has been used for giving birth to
The multiple fields such as thing, medical science, photoelectric device (M.Liras, J.Mater.Chem., 2011,21,12803-12811.).At present,
POSS, as a kind of high performance coating material, is improving graphene nanometer sheet, Au (POSS-Au composite nanometer particle) and Pd
Have in the stability of nano-particle and applied, but the research as quantum dot surface dressing agent is also fewer at present.Wang Zhongsheng
The POSS of eight iodonium imidazolide salts groups will be modified Deng (Z.S.Wang, Chem.COAmun., 2014,50,1685-1687.)
(POSS-8EsPImI) it is used as the solid electrolyte in solid-state dye sensitized solaode, because the Si-O key in POSS is made
With POSS-8EsPImI is in TiO2There is good wettability on surface, therefore can be in TiO2Good attachment and filling are realized in surface,
Thus effectively increasing the conversion efficiency (7.11%) of this battery, this battery also has under the long-term irradiation of one times of sun light intensity
Stability well.There is presently no it as the document report of solaode photosensitizer aspect.
Content of the invention
For the deficiencies in the prior art, the technical problem that the present invention intends to solve is to provide a kind of POSS and modifies CdTe quantum
The preparation method of point sensitization solar battery.The method is that POSS is modified CdTe quantum surface, after being modified using POSS
CdTe quantum be assembled into quantum dot sensitized solaode as photosensitizer.The method can change CdTe quantum
Photoelectric characteristic, reduces the defect of quantum dot surface, and the stability increasing quantum dot is so that electronics is more effectively injected into TiO2
In, and then improve photoelectric transformation efficiency and the stability of quantum dot sensitized solaode.
The technical scheme that the present invention solves described technical problem is to provide a kind of POSS modification CdTe quantum sensitization sun
The preparation method of energy battery is it is characterised in that comprise the following steps：
(1) preparation of CdTe quantum：CdTe quantum powder is prepared using Aqueous phase condensing reflux；
(2) POSS modifies CdTe quantum：By step 1) obtain CdTe quantum powder and be configured to CdTe quantum solution,
Coupling agent EDC is added to stirring 30-60min, wherein mol ratio CdTe in CdTe quantum solution：EDC=1:50-1000；
The mol ratio that 4-6h, wherein CdTe and OA-POSS are stirred at room temperature after being subsequently adding OA-POSS solution is 1:10-1000；Purification
Afterwards, obtain OA-POSS and modify CdTe quantum powder；
(3) assembling of quantum dot sensitized solaode：By step 2) OA-POSS that obtains modifies CdTe quantum powder
It is configured to OA-POSS to modify CdTe quantum solution and adjust pH value to 9-11；It is subsequently adding TGA, TGA and OA-POSS to modify
The volume ratio of CdTe quantum solution is 1:100-500；Titanium dioxide photo anode is immersed in OA-POSS and modifies CdTe quantum
12-36 hour in solution；Then be assembled into sandwich structure with to electrode CuS, and titanium dioxide photo anode with to electrode CuS it
Between inject sulphion electrolyte, formed OA-POSS modify CdTe quantum sensitization solar battery.
Step 1) described in Aqueous phase condensing reflux prepare CdTe quantum powder concrete grammar be：NAC is dissolved in
In water, stir to mix homogeneously under room temperature；It is subsequently adding CdCl2Solution, obtains containing Cd2+Precursor solution；Add after stirring
Excessive KBH4, it is subsequently adding Na2TeO3Aqueous solution, stirs under room temperature to transparent homogeneous solution；Then the pH value of adjustment solution is
9-11.5；Heat under conditions of 90-100 DEG C again, prepare the CdTe quantum of different-grain diameter, wherein mol ratio NAC/
Cd2+/Te2-=1.2:1:0.2；After purification, obtain CdTe quantum powder.
Described method of purification is：By CdTe quantum by ethanol precipitation after, carry out in centrifuge centrifugation purification, Ran Houfang
In drying baker, 40 DEG C -80 DEG C are dried 1-48h.
Compared with prior art, the present invention has the beneficial effects that：
(1) this method is a kind of preparation side of the OA-POSS modification CdTe quantum sensitization solar battery of simple possible
Method, solves the problems, such as that between quantum dot stability difference and light anode and quantum dot interface, electron-hole recombinations are serious.In CdTe quantum
Point surface modification OA-POSS, can change the photoelectric characteristic of CdTe quantum, be effectively passivated quantum dot, reduce quantum dot surface
Defect, increase quantum dot stability so that electronics is more effectively injected into TiO2In, and then improve the quantum dot sensitized sun
The photoelectric transformation efficiency of energy battery and stability.
(2) due to having modified OA-POSS in quantum dot surface, the Si-O inorganic core in OA-POSS serves non-this method
Often good Steric stabilization, and electrolyte molecule easily can reach TiO by Si-O cage structure2Surface, incrementss
It is achieved that TiO while son point stability2Interface modification between light anode and CdTe quantum, effectively reduces charge recombination, increases
Plus light induced electron injection TiO2The injection efficiency of photo-anode film and collection efficiency, improve quantum dot sensitized solaode
Photoelectric current and photoelectric transformation efficiency.
Brief description
Fig. 1 modifies the CdTe amount of the preparation method embodiment 1 of CdTe quantum sensitization solar battery for POSS of the present invention
Son point modify before and after and POSS Fourier transform infrared spectroscopy figure；
Fig. 2 modifies the OA-POSS of the preparation method embodiment 1 of CdTe quantum sensitization solar battery for POSS of the present invention
Modify transmission plot after CdTe quantum；
Fig. 3 modifies the CdTe amount of the preparation method embodiment 1 of CdTe quantum sensitization solar battery for POSS of the present invention
The J-V curve of the battery before and after son point modification；
Fig. 4 modifies the CdTe amount of the preparation method embodiment 1 of CdTe quantum sensitization solar battery for POSS of the present invention
The electrochemical alternate impedance spectrum of the battery before and after son point modification；
Specific embodiment
The specific embodiment of the present invention is given below.Specific embodiment is only used for further describing the present invention, does not limit
The application scope of the claims processed.
The invention provides a kind of POSS modify CdTe quantum sensitization solar battery preparation method it is characterised in that
Comprise the following steps：
(1) preparation of CdTe quantum：CdTe quantum is prepared using Aqueous phase condensing reflux；By NAC (N- acetyl-L-
Cysteine) it is dissolved in the water, stir to mix homogeneously under room temperature；It is subsequently adding CdCl2Solution, obtains containing Cd2+Presoma
Solution；Excessive KBH is added after being stirred vigorously4, it is added dropwise over Na immediately after2TeO3Aqueous solution, stirs under room temperature to transparent homogeneous
Solution；Then the pH value with NaOH solution adjustment solution is 9-11.5；Heat under conditions of 90-100 DEG C again, prepare
The CdTe quantum of different-grain diameter, wherein mol ratio NAC/Cd2+/Te2-=1.2:1:0.2；After purification, obtain CdTe quantum
Powder；
(2) POSS modifies CdTe quantum：Modify CdTe quantum using OA-POSS；By step 1) obtain CdTe quantum
Point powder is dissolved in water and is configured to CdTe quantum solution, and coupling agent EDC is added to stirring 30- in CdTe quantum solution
60min, wherein mol ratio CdTe：EDC=1:50-1000；4-6h is stirred at room temperature after being subsequently adding OA-POSS solution, makes OA-
POSS is fully modified on CdTe quantum surface, and the mol ratio of wherein CdTe and OA-POSS is 1:10-1000；After purification,
Obtain OA-POSS and modify CdTe quantum powder；
(3) assembling of quantum dot sensitized solaode：By step 2) OA-POSS that obtains modifies CdTe quantum powder
It is dissolved in water and is configured to OA-POSS and modify CdTe quantum solution and with NaOH solution adjustment pH value to 9-11；It is subsequently adding TGA
(TGA), as molecular linkers, the volume ratio that TGA and OA-POSS modifies CdTe quantum solution is 1:100-500；Will
Titanium dioxide photo anode is immersed in OA-POSS and modifies 12-36 hour in CdTe quantum solution, and OA-POSS is modified CdTe by TGA
Quantum dot is connected to titanium dioxide photo anode surface；Then it is assembled into sandwich structure with to electrode CuS, and titanium-dioxide photo sun
Pole and between electrode CuS inject sulphion electrolyte, formed OA-POSS modify the quantum dot sensitized solaode of CdTe.
Described method of purification is to remove the Excess reagents in course of reaction and by-product, by CdTe quantum by ethanol
After precipitation, carry out centrifugation purification in centrifuge, be then placed in drying baker 40 DEG C -80 DEG C 1-48h is dried.
Embodiment 1
(1) preparation of CdTe quantum：CdTe quantum is prepared using Aqueous phase condensing reflux；NAC is dissolved in the water,
Stir to mix homogeneously under room temperature；It is subsequently adding CdCl2Solution, obtains containing Cd2+Precursor solution；Added after being stirred vigorously
Amount KBH4, it is subsequently adding Na2TeO3Aqueous solution, stirs under room temperature to transparent homogeneous solution；Then adjust the pH value of solution extremely
11；Heat under conditions of 100 DEG C again, prepare the CdTe quantum of different-grain diameter, wherein mol ratio NAC/Cd2+/Te2-
=1.2:1:0.2；After purification, obtain CdTe quantum powder；
(2) POSS modifies CdTe quantum：Modify CdTe quantum using OA-POSS；By step 1) obtain CdTe quantum
Point powder is dissolved in water and is configured to CdTe quantum solution, and coupling agent EDC is added to stirring 30min in CdTe quantum solution,
Wherein mol ratio CdTe：EDC=1:500；4h is stirred at room temperature after adding OA-POSS solution, makes OA-POSS in CdTe quantum table
Face is fully modified, and the mol ratio of wherein CdTe and OA-POSS is 1:10；After purification, obtain OA-POSS and modify CdTe quantum
Point powder；
(3) assembling of quantum dot sensitized solaode：By step 2) OA-POSS that obtains modifies CdTe quantum powder
It is dissolved in water and is configured to OA-POSS and modify CdTe quantum solution and adjust pH value to 10；It is subsequently adding TGA, TGA and OA-POSS
Modify the volume ratio 1 of CdTe quantum solution:300；Titanium dioxide photo anode is immersed in OA-POSS modification CdTe quantum molten
24 hours in liquid, OA-POSS modification CdTe quantum is connected to titanium dioxide photo anode surface by TGA；Then with to electrode CuS
Be assembled into sandwich structure, and titanium dioxide photo anode and between electrode CuS inject sulphion electrolyte, formed OA-POSS
Modify CdTe quantum sensitization solar battery.
The test result of embodiment is as follows：
The performance parameter of the battery before and after CdTe quantum modification in table 1 embodiment 1
Fig. 1 for CdTe quantum modification before and after and OA-POSS Fourier transform infrared spectroscopy figure, through OA-
In the CdTe quantum that POSS modifies, in 1123cm-1And 1030cm-1The feature that the absworption peak at place is respectively belonging to Si-O-Si is inhaled
Receive and Si-O-Si cage modle framing structure vibration, and without modify CdTe quantum do not have this characteristic absorption it was demonstrated that
The successful modification to quantum dot for the OA-POSS.
Fig. 2 be OA-POSS modify quantum dot after transmission picture, as can be seen from the figure quantum dot be subsphaeroidal,
Particle diameter distribution is more uniform, has preferable monodispersity.Upper right corner illustration is quantum dot partial enlarged drawing it can be seen that quantum dot
Lattice fringe substantially, fringe spacing is 0.36nm, corresponding to (111) face of the CdTe quantum of cubic sphalerite structure, and
And quantum dot degree of crystallinity is preferable.
Fig. 3 and Biao 1 is respectively the J-V curve of battery and performance parameter before and after CdTe quantum is modified, and test condition is
AM1.5 intensity of illumination 100mW/cm2Carry out, by comparing, the open-circuit voltage of battery brings up to 0.56V by 0.53V, short
Road electric current is by 4.4mA/cm2Bring up to 6.2mA/cm2, the electricity conversion of battery brings up to 1.87% by original 1.17%,
Improve 60%.
Fig. 4 corresponds respectively to height for the electrochemical alternate impedance spectrum of the battery before and after CdTe quantum modification, two semicircles
Frequency is partly to the charge transfer process (R in electrode/electrolyte interface and electrolyte1, small semicircle), low frequency part TiO2/ quantum
Point/electrolyte interface and TiO2Charge transfer process (R in thin film2, large semicircle), the in figure upper left corner is equivalent-circuit model.Logical
Cross to compare and understand, the CdTe quantum sensitization solar battery resistance value that OA-POSS modifies is larger, so inside battery has relatively
Few charge recombination, electrolyte molecule can be easily by Si-O cage structure arrival TiO simultaneously2Surface, increases quantum dot
It is achieved that TiO while stability2Interface modification between light anode and CdTe quantum, improves quantum dot sensitized solar energy
The photoelectric current of battery and photoelectric transformation efficiency.
Embodiment 2
(1) preparation of CdTe quantum：CdTe quantum is prepared using Aqueous phase condensing reflux；NAC is dissolved in the water,
Stir to mix homogeneously under room temperature；It is subsequently adding CdCl2Solution, obtains containing Cd2+Precursor solution；Added after being stirred vigorously
Amount KBH4, it is subsequently adding Na2TeO3Aqueous solution, stirs under room temperature to transparent homogeneous solution；Then the pH value of adjustment solution is
10；Heat under conditions of 100 DEG C again, prepare the CdTe quantum of different-grain diameter, wherein mol ratio NAC/Cd2+/Te2-
=1.2:1:0.2；After purification, obtain CdTe quantum powder；
(2) POSS modifies CdTe quantum：Modify CdTe quantum using OA-POSS；By step 1) obtain CdTe quantum
Point powder is dissolved in water and is configured to CdTe quantum solution, and coupling agent EDC is added to stirring 40min in CdTe quantum solution,
Wherein mol ratio CdTe：EDC=1:200；4h is stirred at room temperature after being subsequently adding OA-POSS solution, makes OA-POSS in CdTe quantum
Point surface is fully modified, and the mol ratio of wherein CdTe and OA-POSS is 1:50；After purification, obtain OA-POSS and modify CdTe
Quantum dot powder；
(3) assembling of quantum dot sensitized solaode：By step 2) OA-POSS that obtains modifies CdTe quantum powder
It is dissolved in water to be configured to OA-POSS modification CdTe quantum solution and adjust pH value to 10, add TGA as molecular linkers, TGA
The volume ratio modifying CdTe quantum solution with OA-POSS is 1:100；Titanium dioxide photo anode is immersed in OA-POSS modify
24 hours in CdTe quantum solution, OA-POSS modification CdTe quantum is connected to titanium dioxide photo anode surface by TGA；So
Be assembled into sandwich structure with to electrode CuS afterwards, and titanium dioxide photo anode and between electrode CuS injection sulphion electrolysis
Liquid, forms OA-POSS and modifies CdTe quantum sensitization solar battery.
Embodiment 3
(1) preparation of CdTe quantum：CdTe quantum is prepared using Aqueous phase condensing reflux；NAC is dissolved in the water,
Stir to mix homogeneously under room temperature；It is subsequently adding CdCl2Solution, obtains containing Cd2+Precursor solution；Added after being stirred vigorously
Amount KBH4, it is subsequently adding Na2TeO3Aqueous solution, stirs under room temperature to transparent homogeneous solution；Then the pH value of adjustment solution is 9；
Heat under conditions of 100 DEG C again, prepare the CdTe quantum of different-grain diameter, wherein mol ratio NAC/Cd2+/Te2-=
1.2:1:0.2；After purification, obtain CdTe quantum powder；
(2) POSS modifies CdTe quantum：Modify CdTe quantum using OA-POSS；By step 1) obtain CdTe quantum
Point powder is dissolved in water and is configured to CdTe quantum solution, and coupling agent EDC is added to stirring 50min in CdTe quantum solution,
Wherein mol ratio CdTe：EDC=1:700；4h is stirred at room temperature after being subsequently adding OA-POSS solution, makes OA-POSS in CdTe quantum
Point surface is fully modified, and the mol ratio of wherein CdTe and OA-POSS is 1:100；After purification, obtain OA-POSS and modify
CdTe quantum powder；
(3) assembling of quantum dot sensitized solaode：By step 2) OA-POSS that obtains modifies CdTe quantum powder
It is dissolved in water and is configured to OA-POSS and modify CdTe quantum solution and adjust pH value to 10；It is subsequently adding TGA to connect as molecule
Agent, the volume ratio that TGA and OA-POSS modifies CdTe quantum solution is 1:500；Titanium dioxide photo anode is immersed in OA-
POSS modifies 30 hours in CdTe quantum solution, and OA-POSS modification CdTe quantum is connected to titanium dioxide photo anode by TGA
Surface；Then be assembled into sandwich structure with to electrode CuS, and titanium dioxide photo anode and between electrode CuS injection sulfur from
Sub- electrolyte, forms OA-POSS and modifies CdTe quantum sensitization solar battery.
The present invention does not address part and is applied to prior art.
Claims (3)
1. a kind of POSS modifies the preparation method of CdTe quantum sensitization solar battery it is characterised in that comprising the following steps：
（1）The preparation of CdTe quantum：CdTe quantum powder is prepared using Aqueous phase condensing reflux；
（2）POSS modifies CdTe quantum：By step 1）Obtain CdTe quantum powder and be configured to CdTe quantum solution, will be even
Connection agent EDC is added to stirring 30-60min, wherein mol ratio CdTe in CdTe quantum solution：EDC=1:50-1000；Then plus
The mol ratio that 4-6h, wherein CdTe and OA-POSS are stirred at room temperature after entering OA-POSS solution is 1:10-1000；After purification, obtain
OA-POSS modifies CdTe quantum powder；
（3）The assembling of quantum dot sensitized solaode：By step 2）The OA-POSS obtaining modifies CdTe quantum powder and joins
It is set to OA-POSS to modify CdTe quantum solution and adjust pH value to 9-11；It is subsequently adding TGA, TGA and OA-POSS to modify
The volume ratio of CdTe quantum solution is 1:100-500；Titanium dioxide photo anode is immersed in OA-POSS and modifies CdTe quantum
12-36 hour in solution；Then be assembled into sandwich structure with to electrode CuS, and titanium dioxide photo anode with to electrode CuS it
Between inject sulphion electrolyte, formed OA-POSS modify CdTe quantum sensitization solar battery.
2. POSS according to claim 1 modifies the preparation method of CdTe quantum sensitization solar battery, and its feature exists
In step 1）Described in Aqueous phase condensing reflux prepare CdTe quantum powder concrete grammar be：NAC is dissolved in the water, room
The lower stirring of temperature is to mix homogeneously；It is subsequently adding CdCl2Solution, obtains containing Cd2+Precursor solution；Add excessive after stirring
KBH4, it is subsequently adding Na2TeO3Aqueous solution, stirs under room temperature to transparent homogeneous solution；Then the pH value of adjustment solution is 9-
11.5；Heat under conditions of 90-100 DEG C again, prepare the CdTe quantum of different-grain diameter, wherein mol ratio NAC/Cd2+/
Te2-=1.2:1:0.2；After purification, obtain CdTe quantum powder.
3. POSS according to claim 1 and 2 modifies the preparation method of CdTe quantum sensitization solar battery, its feature
It is that described method of purification is：By CdTe quantum by ethanol precipitation after, carry out in centrifuge centrifugation purification, be then placed on dry
In dry case, 40 DEG C -80 DEG C are dried 1-48h.
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| CN109616328A (en) * | 2018-12-05 | 2019-04-12 | 河北工业大学 | A kind of preparation method of the quantum dot sensitized solar battery of surface passivation CdSeTe |
| CN111318275A (en) * | 2020-03-27 | 2020-06-23 | 北京赛夫依特生物科技有限公司 | Photocatalyst suitable for indoor air purification of dark light |
| CN111423596A (en) * | 2020-05-19 | 2020-07-17 | 常州大学 | Trackable auxiliary agent and preparation method thereof |
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| CN109616328A (en) * | 2018-12-05 | 2019-04-12 | 河北工业大学 | A kind of preparation method of the quantum dot sensitized solar battery of surface passivation CdSeTe |
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| CN111318275B (en) * | 2020-03-27 | 2022-08-30 | 北京赛夫依特生物科技有限公司 | Photocatalyst suitable for indoor air purification of dark light |
| CN111423596A (en) * | 2020-05-19 | 2020-07-17 | 常州大学 | Trackable auxiliary agent and preparation method thereof |
| CN111423596B (en) * | 2020-05-19 | 2022-03-01 | 常州大学 | Trackable auxiliary agent and preparation method thereof |
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