CN106461366A - Epoxy resin composition and electrostatic-capacitance-type fingerprint sensor - Google Patents
Epoxy resin composition and electrostatic-capacitance-type fingerprint sensor Download PDFInfo
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- CN106461366A CN106461366A CN201580015950.4A CN201580015950A CN106461366A CN 106461366 A CN106461366 A CN 106461366A CN 201580015950 A CN201580015950 A CN 201580015950A CN 106461366 A CN106461366 A CN 106461366A
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- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08L—COMPOSITIONS OF MACROMOLECULAR COMPOUNDS
- C08L63/00—Compositions of epoxy resins; Compositions of derivatives of epoxy resins
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- A—HUMAN NECESSITIES
- A61—MEDICAL OR VETERINARY SCIENCE; HYGIENE
- A61B—DIAGNOSIS; SURGERY; IDENTIFICATION
- A61B5/00—Measuring for diagnostic purposes; Identification of persons
- A61B5/117—Identification of persons
- A61B5/1171—Identification of persons based on the shapes or appearances of their bodies or parts thereof
- A61B5/1172—Identification of persons based on the shapes or appearances of their bodies or parts thereof using fingerprinting
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- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08K—Use of inorganic or non-macromolecular organic substances as compounding ingredients
- C08K3/00—Use of inorganic substances as compounding ingredients
- C08K3/01—Use of inorganic substances as compounding ingredients characterized by their specific function
- C08K3/013—Fillers, pigments or reinforcing additives
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- C08K3/00—Use of inorganic substances as compounding ingredients
- C08K3/18—Oxygen-containing compounds, e.g. metal carbonyls
- C08K3/20—Oxides; Hydroxides
- C08K3/22—Oxides; Hydroxides of metals
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- G—PHYSICS
- G06—COMPUTING; CALCULATING OR COUNTING
- G06V—IMAGE OR VIDEO RECOGNITION OR UNDERSTANDING
- G06V40/00—Recognition of biometric, human-related or animal-related patterns in image or video data
- G06V40/10—Human or animal bodies, e.g. vehicle occupants or pedestrians; Body parts, e.g. hands
- G06V40/12—Fingerprints or palmprints
- G06V40/13—Sensors therefor
- G06V40/1306—Sensors therefor non-optical, e.g. ultrasonic or capacitive sensing
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- C08K—Use of inorganic or non-macromolecular organic substances as compounding ingredients
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- C08K3/18—Oxygen-containing compounds, e.g. metal carbonyls
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- C08L2203/162—Applications used for films sealable films
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Abstract
This epoxy resin composition is used to form an insulating film (105) which constitutes an electrostatic-capacitance-type fingerprint sensor (100) that comprises a substrate (101), detection electrodes (103) provided on the substrate (101), and the insulating film (105) which seals the detection electrodes (103). This epoxy resin composition includes an epoxy resin (A) and an inorganic filler (B).
Description
Technical field
The present invention relates to composition epoxy resin and capacitance type fingerprint sensor.
Background technology
For fingerprint sensor, have studied various technology.For example in patent documentation 1, examine to by electrostatic capacitance mode
The semiconductor fingerprint sensor surveying finger print information is studied.
Patent documentation 1 records on a kind of substrate in silicon etc., is configured with electrode across interlayer film in array-like, and
The finger print reading sensor that its upper surface is covered with dielectric film.
Prior art literature
Patent documentation
Patent documentation 1:Japanese Unexamined Patent Publication 2004-234245 publication
Content of the invention
Invention technical problem to be solved
For possessing substrate, the detecting electrode being arranged on aforesaid substrate and the dielectric film by the sealing of above-mentioned detecting electrode
Capacitance type fingerprint sensor is it is desirable to improve its sensitivity.
For solving the means of technical problem
According to the present invention, provide a kind of composition epoxy resin, it is used for forming composition capacitance type fingerprint sensor
Dielectric film, above-mentioned capacitance type fingerprint sensor possesses substrate, the detecting electrode being arranged on aforesaid substrate and will be above-mentioned
The above-mentioned dielectric film of detecting electrode sealing, above-mentioned composition epoxy resin is characterised by, contains:Epoxy resin (A);With inorganic
Filler (B).
In addition, according to the present invention, providing a kind of capacitance type fingerprint sensor it is characterised in that possessing:Substrate;If
Put the detecting electrode on aforesaid substrate;Seal and the solidfied material by above-mentioned composition epoxy resin with by above-mentioned detecting electrode
The dielectric film being formed.
Invention effect
In accordance with the invention it is possible to improve the sensitivity of capacitance type fingerprint sensor.
Brief description
Above-mentioned purpose and other purposes, feature and advantage, by the preferred implementation of described below and subsidiary
To become more apparent in its following drawings.
Fig. 1 is the sectional view of the capacitance type fingerprint sensor schematically showing present embodiment.
Specific embodiment
Hereinafter, using accompanying drawing, embodiment is illustrated.In addition, in all the drawings, to identical constitutive requirements
Mark identical symbol, and suitably omit the description.
Fig. 1 is the sectional view of the capacitance type fingerprint sensor 100 schematically showing present embodiment.
The capacitance type fingerprint sensor 100 of present embodiment possesses:Substrate 101;Setting detection on the substrate 101
Electrode 103;With the dielectric film 105 sealing detecting electrode 103.Dielectric film 105 is formed by the solidfied material of composition epoxy resin.
In addition, above-mentioned composition epoxy resin contains epoxy resin (A) and inorganic filler (B).
The present inventor's new discovery, by by the composition epoxy resin containing epoxy resin (A) and inorganic filler (B)
The dielectric film that detecting electrode is sealed by solidfied material composition, it is possible to increase the sensitivity of capacitance type fingerprint sensor, thus complete
Become the scheme of present embodiment.
According to present embodiment, dielectric film 105 that detecting electrode 103 is sealed is by containing epoxy resin (A) with inorganic fill out
The solidfied material filling the composition epoxy resin of agent (B) is constituted.The dielectric property of such solidfied material is excellent.Therefore, it is possible to improve
The sensitivity of capacitance type fingerprint sensor 100.Here, in the present embodiment, dielectric property is excellent to be referred to, for example relatively
Dielectric constant and dielectric loss angle tangent are high, and electrostatic capacitance is big.
Hereinafter, the composition epoxy resin of present embodiment is described in detail.
Composition epoxy resin is used for forming the dielectric film 105 that detecting electrode 103 on the substrate 101 seals by setting.
Seal molding using composition epoxy resin is not particularly limited, for example, can be entered by transmitting forming process or compression forming method
OK.Composition epoxy resin is, for example, lamellar or bulk material.In the case that composition epoxy resin is for lamellar, for example, can make
With transmission forming process, composition epoxy resin is shaped.In addition, in the case that composition epoxy resin is for bulk material, such as can
Enough using compression forming method, composition epoxy resin is shaped.Composition epoxy resin is bulk material, refers to epoxy composite
Thing is powder or granular situation.
(epoxy resin (A))
As epoxy resin (A), can using all 1 intramolecular have the monomer of more than 2 epoxy radicals, oligomer,
Polymer, its molecular weight and molecular structure are not particularly limited.
In the present embodiment, as epoxy resin (A), for example, can enumerate:Biphenyl type epoxy resin;Bisphenol type epoxy
The bisphenol-type epoxy resins such as resin, bisphenol f type epoxy resin, tetramethyl bisphenol f type epoxy resin;Type epoxy resin;Phenol
The phenolic resin varnish type epoxy resins such as phenolic resin varnish type epoxy resin, cresol novolak type epoxy resin;Triphenol methylmethane type ring
The polyfunctional epoxy resins such as oxygen tree fat, alkyl-modified triphenol methylmethane type epoxy resin;There is the phenol aralkyl of phenylene skeleton
Type epoxy resin, there is the aralkyl-type epoxy resin such as the phenol aralkyl-type epoxy resin of biphenylene skeleton;Dihydroxy naphthlene type
Epoxy resin, the dimer of dihydroxy naphthlene is carried out the naphthol type epoxy resin such as epoxy resin obtained from glycidyl ether;
Isocyanuric acid three-glycidyl ester, monoallyl Diglycidylisocyanury- ester etc. contain the epoxy resin of triazine core;Bicyclo-
The crosslinking compound modified phenol type epoxy resin of cyclic hydrocarbon such as pentylene modified phenol type epoxy resin, these can be used alone
1 kind it is also possible to and use two or more.
In these, from the viewpoint of improving the balance of moisture-proof reliability and formability, further preferably bisphenol type ring
Oxygen tree fat, phenolic resin varnish type epoxy resin, biphenyl type epoxy resin, phenol aralkyl-type epoxy resin and triphenol methylmethane type epoxy
At least one of resin, particularly preferably contains at least one of biphenyl type epoxy resin and phenol aralkyl-type epoxy resin.
As epoxy resin (A), particularly preferably using containing the epoxy resin representing selected from following formula (1), by following
The epoxy resin of at least one in epoxy resin that formula (2) represents and the epoxy resin that represented by following formula (3).
(in formula (1), Ar1Represent phenylene or naphthylene, in Ar1For the situation of naphthylene, glycidyl ether can be with key
It is combined in any one of α position and β position.Ar2Represent any one of phenylene, biphenylene and naphthylene base.RaAnd RbRespectively solely
On the spot represent the alkyl of carbon number 1~10.G is 0~5 integer, and h is 0~8 integer.n3Represent the degree of polymerization, its meansigma methods
For 1~3)
(in formula (2), there are multiple RcSeparately represent the alkyl of hydrogen atom or carbon number 1~4.n5Represent poly-
Right, its meansigma methods is 0~4)
(in formula (3), there are multiple RdAnd ReSeparately represent the alkyl of hydrogen atom or carbon number 1~4.n6Table
Show the degree of polymerization, its meansigma methods is 0~4)
In the present embodiment, when composition epoxy resin is integrally set to 100 mass %, in composition epoxy resin
Epoxy resin (A) content be preferably 2 mass % more than, more than more preferably 3 mass %, especially preferably 4 mass % with
On.It is more than above-mentioned lower limit by the content making epoxy resin (A), sufficient mobility can be realized when shaping, make to fill out
Filling property and formability improve.
On the other hand, the epoxy when composition epoxy resin is integrally set to 100 mass %, in composition epoxy resin
The content of resin (A) is preferably below 30 mass %, below more preferably 20 mass %, below especially preferably 10 mass %.
It is below above-mentioned higher limit by the content making epoxy resin (A), it is possible to increase the solidfied material using composition epoxy resin is made
Moisture-proof reliability for the capacitance type fingerprint sensor 100 of dielectric film 105 and resistance to reflow.
(inorganic filler (B))
As the constituent material of inorganic filler (B), be not particularly limited, for example can enumerate titanium oxide, tantalum pentoxide, five
Niobium oxide, Barium metatitanate., silicon dioxide, aluminium oxide, Kaolin, Talcum, clay, Muscovitum, rock wool, wollastonite, glass dust, glass
Piece, bead, glass fibre, carborundum, silicon nitride, aluminium nitride, white carbon black, graphite, titanium dioxide, Calcium Carbonate, calcium sulfate, carbonic acid
Barium, magnesium carbonate, magnesium sulfate, barium sulfate, cellulose, aromatic polyamides, timber or by phenolic resin molding material or epoxy resin
Comminuted powder etc. obtained from solidfied material pulverizing of moulding material, it is possible to use wantonly more than a kind in these.
In these, preferably relative dielectric constant (1MHz) is more than 5 inorganic filler, from enable in particular to improve institute
From the viewpoint of the relative dielectric constant of the firming body of the composition epoxy resin obtaining, more preferably using selected from titanium oxide, oxygen
Change one of aluminum, tantalum pentoxide, niobium pentoxide and Barium metatitanate. or two or more, more preferably using selected from aluminium oxide, titanium oxide
With one of Barium metatitanate. or two or more, more preferably using selected from one of titanium oxide and Barium metatitanate. or two or more, from
From the viewpoint of the oxidative degradation of suppression resin, particularly preferably use the titanium oxide of rutile-type.
In the present embodiment, when composition epoxy resin is integrally set to 100 mass %, with respect to epoxy resin group
Compound is overall, and the content of the inorganic filler (B) in composition epoxy resin is preferably more than 50 mass %, more preferably 70 matter
Amount more than %, more than especially preferably 80 mass %.It is more than above-mentioned lower limit by the content making inorganic filler (B), energy
Enough dielectric properties further improving composition epoxy resin, further improve capacitance type fingerprint sensor 100
Sensitivity.
On the other hand, when composition epoxy resin is integrally set to 100 mass %, inorganic in composition epoxy resin
The content of filler (B) is preferably below 97 mass %, below more preferably 95 mass %.By making inorganic filler (B)
Content is below above-mentioned higher limit, can more effectively improve the mobility when shaping for the composition epoxy resin and fillibility.
Mean diameter D of inorganic filler (B)50It is preferably less than more than 0.01 μm 50 μm, more preferably more than 0.1 μm 30
Below μm.By making mean diameter D50The good fluidity of composition epoxy resin more than above-mentioned lower limit, can be made, more have
Effect ground improves formability.In addition, by making mean diameter D50Below above-mentioned higher limit, generation cast gate can be reliably suppressed and block up
Plug etc..In addition, making the thickness of the dielectric film 105 on substrate 101 (for example, silicon chip) to improve the sensitivity of fingerprint sensor
In the case that degree D is less than 50 μm of thin thickness, it is not filled by bad, inorganic filler in order to suppress composition epoxy resin
(B) mean diameter D50It is preferably less than 10 μm, more preferably less than 5 μm.In addition, mean diameter D50Can use commercially available
Laser type particle size distribution meter (SALD-7000 that for example Shimadzu Scisakusho Ltd manufactures), measures granule with volume reference
Particle size distribution, by its median particle diameter (D50) as mean diameter D50.
Titanium oxide can be using well known to a person skilled in the art material.
The content of the titanium oxide in inorganic filler (B) is not particularly limited, for example whole with respect to inorganic filler (B)
Body, below more than preferably 1 mass % 100 mass %, below more than more preferably 2 mass % 80 mass %, especially preferably 5
Below more than quality % 50 mass %.
By making the content of titanium oxide for more than above-mentioned lower limit, can further improve Jie of composition epoxy resin
Electrical characteristics, further improve the sensitivity of capacitance type fingerprint sensor 100.In addition, by the content making titanium oxide being
The good fluidity of composition epoxy resin below above-mentioned higher limit, can be made, more effectively improve formability.
Mean diameter D of titanium oxide50It is preferably less than more than 0.01 μm 20 μm, more preferably less than more than 0.1 μm 15 μm.
By making mean diameter D50The good fluidity of composition epoxy resin more than above-mentioned lower limit, can be made, more effectively carry
High formability.In addition, by making mean diameter D50Below above-mentioned higher limit, generation cast gate blocking etc. can be reliably suppressed.
In addition, make the thickness D of the dielectric film 105 on substrate 101 (such as silicon chip) be to improve the sensitivity of fingerprint sensor
In the case of less than 50 μm of thin thickness, it is not filled by bad, the average grain of titanium oxide in order to suppress composition epoxy resin
Footpath D50It is preferably less than 10 μm, more preferably less than 5 μm.
Barium metatitanate. can be using well known to a person skilled in the art material.
The content of the Barium metatitanate. in inorganic filler (B) is not particularly limited, for example whole with respect to inorganic filler (B)
Body, below more than preferably 10 mass % 100 mass %, below more than more preferably 25 mass % 90 mass %, particularly preferably
Below more than 40 mass % 75 mass %.
By making the content of Barium metatitanate. for more than above-mentioned lower limit, can further improve Jie of composition epoxy resin
Electrical characteristics, further improve the sensitivity of capacitance type fingerprint sensor 100.In addition, by the content making Barium metatitanate. being
The good fluidity of composition epoxy resin below above-mentioned higher limit, can be made, more effectively improve formability.
Mean diameter D of Barium metatitanate.50It is preferably less than more than 0.01 μm 20 μm, more preferably less than more than 0.1 μm 15 μm.
By making mean diameter D50The good fluidity of composition epoxy resin more than above-mentioned lower limit, can be made, more effectively carry
High formability.In addition, by making mean diameter D50Below above-mentioned higher limit, generation cast gate blocking etc. can be reliably suppressed.
In addition, make the thickness D of the dielectric film 105 on substrate 101 (such as silicon chip) be to improve the sensitivity of fingerprint sensor
In the case of less than 50 μm of thin thickness, it is not filled by bad, the average grain of Barium metatitanate. in order to suppress composition epoxy resin
Footpath D50It is preferably less than 10 μm, more preferably less than 5 μm.
In addition, the sensitivity of the fingerprint sensor obtained by improving, and suppress the viewpoint of the warpage of fingerprint sensor
Set out, inorganic filler (B) preferably will selected from one of titanium oxide, aluminium oxide, tantalum pentoxide, niobium pentoxide and Barium metatitanate. or
Two or more inorganic fillers and silicon dioxide are used in combination, more preferably will be selected from one of aluminium oxide, titanium oxide and Barium metatitanate.
Or two or more inorganic fillers is used in combination with silica dioxide granule, particularly preferably will be selected from one of titanium oxide and Barium metatitanate.
Or two or more inorganic fillers is used in combination with silica dioxide granule.
In addition, in the present embodiment, from viewpoint or the suppression fingerprint sensing of the fillibility improving composition epoxy resin
From the viewpoint of the warpage of device, it is preferred that one kind, can enumerate inorganic filler (B) contain 1 μm of mean diameter below
Fine particle silica mode.
(firming agent (C))
Composition epoxy resin for example can contain firming agent (C).As firming agent (C), as long as being and epoxy resin (A)
Carrying out reacting makes its material solidifying just be not particularly limited, for example, can enumerate:Ethylenediamine, trimethylene diamine, tetramethylene two
The straight-chain aliphatic diamidogen of the carbon numbers such as amine, hexamethylene diamine 2~20, m-diaminobenzene., p-phenylenediamine, p dimethylamine,
4,4'- diaminodiphenyl-methane, 4,4'- diamino-diphenyl propane, 4,4'- diaminodiphenyl ether, 4,4'- diaminourea hexichol
Base sulfone, 4,4'- diaminourea bicyclohexane, double (4- aminophenyl) phenylmethane, 1,5- diaminonaphthalene, m-xylene diamine, to benzene
Double (4- aminophenyl) amine such as hexamethylene, dicyandiamide of dimethylamine, 1,1-;Aniline modified resol and dimethyl ether first rank
The resol type phenol resins such as phenolic resin;Phenol resol resins, cresol novolac resin, t-butylphenol novolac
The novolak phenolics such as resin, nonyl phenol novolac resin, triphenol methylmethane type phenol resol resins;Contain
The phenol aralkyl resin of phenylene skeleton, the phenol aralkyl resin such as phenol aralkyl resin containing biphenylene skeleton;There is naphthalene bone
The phenolic resin of thick multiring structure as frame or anthracene skeleton;Gather to polystyrene oxide such as oxygen styrene;Comprise hexahydro neighbour's benzene
The alicyclic anhydride such as dicarboxylic acid anhydride (HHPA), methyl tetrahydrophthalic anhydride (MTHPA), trimellitic anhydride (TMA), equal benzene
Anhydride of the aromatic anhydrides such as tetracarboxylic acid dianhydride (PMDA), benzophenone tetracarboxylic dianhydride (BTDA) etc. etc.;Polysulfide, thioesters, sulfur
The poly-thiol compounds such as ether;The isocyanate compounds such as isocyanate prepolymer, blocked isocyanate;Polyester resin containing carboxylic acid
Deng organic acid.These can be used alone a kind it is also possible to be applied in combination two or more.
The content of the firming agent (C) in composition epoxy resin is not particularly limited, such as by composition epoxy resin
When entirety is set to 100 mass %, below more than preferably 0.5 mass % 20 mass %, more than more preferably 1.5 mass % 20 matter
Amount below %, below more than more preferably 2 mass % 15 mass %, more than especially preferably 2 mass % 10 mass % with
Under.
(coupling agent (D))
Composition epoxy resin for example can contain coupling agent (D).As coupling agent (D), for example, can use epoxy silicon
The various silane compound such as alkane, hydrosulphonyl silane, amino silane, alkyl silane, ureido silane, vinyl silanes, titanium class chemical combination
The known coupling agent such as thing, aluminium chelate compound class, aluminum/Zirconium compound.
These are illustrated, can enumerate:Vinyl trichlorosilane, vinyltrimethoxy silane, vinyl three ethoxy
Base silane, vinyl three ('beta '-methoxy ethyoxyl) silane, γ-methacryloxypropyl trimethoxy silane, β-(3,4-
Epoxycyclohexyl) ethyl trimethoxy silane, γ-glycidoxypropyltrimewasxysilane, γ-glycidoxypropyl third
Ethyl triethoxy silicane alkane, γ-glycidoxypropyl dimethoxysilane, γ-methacryloyloxypropyl methyl
Diethoxy silane, γ-methacryloxypropyl, vinyltriacetoxy silane, γ-sulfydryl third
Base trimethoxy silane, γ aminopropyltriethoxy silane, γ-anilino- propyl trimethoxy silicane, γ-anilino- third
Ylmethyl dimethoxysilane, γ-[double (beta-hydroxy ethyl)] aminopropyltriethoxywerene werene, N- β-(amino-ethyl)-γ-
TSL 8330, N- β-(amino-ethyl)-γ aminopropyltriethoxy silane, N- β-(amino-ethyl)-
Gamma-amino hydroxypropyl methyl dimethoxysilane, N- phenyl-gamma-amino propyl trimethoxy silicane, γ-(beta-aminoethyl) ammonia
Base dimethylamine epoxide methyl-monosilane, N- (trimethoxy-silylpropyl) ethylenediamine, N- (dimethoxy-methyl silicyl
Isopropyl) ethylenediamine, MTMS, dimethyldimethoxysil,ne, MTES, N- β-(N- second
Thiazolinyl benzylamino ethyl)-gamma-amino propyl trimethoxy silicane, γ-r-chloropropyl trimethoxyl silane, hexamethyldisilane,
Vinyltrimethoxy silane, γ-mercaptopropyi methyl dimethoxysilane, 3- NCO propyl-triethoxysilicane,
3- acryloxypropyl trimethoxy silane, 3- triethoxysilyl-N- (1,3- dimethyl-butylidene) propyl group amine
The silane coupling agents such as hydrolysate;Isopropyl three isostearoyl base titanate esters, isopropyl three (dioctylphyrophosphoric acid acyloxy) titanium
Double (two (tridecyl) phosphorous acid acyloxy) titanium of acid esters, isopropyl three (N- aminoethyl-amino ethyl) titanate esters, four octyl groups
Acid esters, four (2,2- diene propoxy methyl -1- butyl) double (two (tridecyl)) phosphorous acid acyloxy titanate esters, double (two is pungent
Base pyrophosphoric acid acyloxy) ethoxyacetic acid titanate esters, double (dioctylphyrophosphoric acid acyloxy) ethylene titanate esters, isopropyl three caprylyl
Titanate esters, isopropyl Dimethylacryloyl isostearoyl base titanate esters, isopropyl three (dodecyl) benzenesulfonyl titanate esters,
Isopropyl stearyl two acryloyl group titanate esters, sec.-propyl three (dioctyl phosphoric acid acyloxy) titanic acid ester, isopropyl three are different
The titante coupling agents such as double (dioctyl phosphito acyloxy) titanate esters of propyl phenyl phenyl titanate, tetra isopropyl.These can
To be used alone a kind it is also possible to be applied in combination two or more.
The content of the coupling agent (D) in composition epoxy resin is not particularly limited, such as by composition epoxy resin
When entirety is set to 100 mass %, below more than preferably 0.01 mass % 3 mass %, more than especially preferably 0.1 mass % 2
Below quality %.By making the content of coupling agent (D) for more than above-mentioned lower limit, making inorganic in composition epoxy resin
The favorable dispersibility of filler (B).In addition, being below above-mentioned higher limit by making the content of coupling agent (D), asphalt mixtures modified by epoxy resin can be made
The good fluidity of oil/fat composition, makes formability improve.
(other compositions (E))
Composition epoxy resin, in addition to mentioned component, can also contain for example:Organic phosphine, four substituted compounds, phosphorus
Addition product of the addition product of acid esters betaine compound, phosphine compound and naphtoquinone compounds or compound and silane compound etc. contains
Amidine compound, the benzyldimethylamine, 2,4 etc. such as phosphorus atoms compound or 1,8- diazabicyclo (5.4.0) hendecene -7, imidazoles
The solidification such as nitrogen atom compound representated by tertiary amine or the amidine salt of quaternary salt as above-claimed cpd or ammonium salt etc. promotes
Agent;The coloring agent such as white carbon black;Polybutadiene compound, acrylonitrile butadiene copolymerization, native paraffin, synthetic wax, higher aliphatic
Acid or the releasing agent such as its metallic salt, paraffin, oxidic polyethylene;The low stress agent such as silicone oil, silicone rubber;Brucite plasma catches
Agent;The fire retardants such as aluminium hydroxide;The various additives such as antioxidant.
The firming body of composition epoxy resin is in the relative dielectric constant (ε of 1MHzr) be preferably more than 5, more preferably 7 with
On, especially preferably more than 8.By making relative dielectric constant (εr) for more than above-mentioned lower limit, can further improve ring
The dielectric property of epoxy resin composition, and further improve the sensitivity of capacitance type fingerprint sensor 100.
In the case that composition epoxy resin is for lamellar, the firming body of composition epoxy resin is for example by using transmission
Forming machine, 175 DEG C of mold temperature, injection pressure 9.8MPa, under conditions of 300 seconds hardening times, by above-mentioned epoxy resin group
Compound injection molding and obtain.This firming body is, for example, diameter 50mm, thickness 3mm.
In addition, in the case that composition epoxy resin is for bulk material, the firming body of composition epoxy resin for example passes through
Using compressing forming machine, 175 DEG C of mold temperature, forming pressure 9.8MPa, under conditions of 300 seconds hardening times, by above-mentioned ring
Epoxy resin composition injection molding and obtain.This firming body is, for example, diameter 50mm, thickness 3mm.
Relative dielectric constant (the ε of firming bodyr) for example can be manufactured using YOKOGAWA-HEWLETT PACKARD company
Q-METER 4342A be measured.
Relative dielectric constant (εr) the upper limit be not particularly limited, for example, less than 300.
In addition, the firming body of composition epoxy resin 1MHz dielectric loss angle tangent (tan δ) be preferably 0.005 with
On, more preferably more than 0.006, more preferably more than 0.007.
By making dielectric loss angle tangent (tan δ) be more than above-mentioned lower limit, can further improve epoxy resin group
The dielectric property of compound, and further improve the sensitivity of capacitance type fingerprint sensor 100.
In the case that composition epoxy resin is for lamellar, the firming body of composition epoxy resin is for example by using transmission
Forming machine, 175 DEG C of mold temperature, injection pressure 9.8MPa, under conditions of 300 seconds hardening times, by above-mentioned epoxy resin group
Compound injection molding and obtain.This firming body is, for example, diameter 50mm, thickness 3mm.
In addition, in the case that composition epoxy resin is for bulk material, the firming body of composition epoxy resin for example passes through
Using compressing forming machine, 175 DEG C of mold temperature, forming pressure 9.8MPa, under conditions of 300 seconds hardening times, by above-mentioned ring
Epoxy resin composition injection molding and obtain.This firming body is, for example, diameter 50mm, thickness 3mm.
The dielectric loss angle tangent (tan δ) of firming body for example can utilize YOKOGAWA-HEWLETT PACKARD company
The Q-METER 4342A manufacturing is measured.
The upper limit of dielectric loss angle tangent (tan δ) is not particularly limited, and for example, less than 0.07.
Above-mentioned relative dielectric constant (εr) and above-mentioned dielectric loss angle tangent (tan δ) ring can be constituted by suitable regulation
The species of each composition of epoxy resin composition and/or mixing ratio are controlled.In the present embodiment, as controlling
State relative dielectric constant (εr) and above-mentioned dielectric loss angle tangent (tan δ) factor, especially can enumerate suitable selecting inorganic fill
The species of agent (B).For example, the big inorganic filler of more use dielectric constants, more can improve consolidating of composition epoxy resin
Change the above-mentioned relative dielectric constant (ε of bodyr) and above-mentioned dielectric loss angle tangent (tan δ).
The length of flow being recorded by spiral flow of composition epoxy resin for example be preferably more than 30cm 200cm with
Under, more preferably more than 40cm below 150cm.Formability thereby, it is possible to make composition epoxy resin improves.In this embodiment party
In formula, the spiral flow of composition epoxy resin measures for example by using transmitting forming machine, in 175 DEG C of mold temperature, injection pressure
Power 9.8MPa, injection length 15 seconds, under conditions of 120~180 seconds hardening times to according to EMMI-1-66 spiral flow measure use
Mould in inject composition epoxy resin, measure length of flow and carry out.
In the present embodiment, the glass transition temperature of the firming body of composition epoxy resin is preferably more than 100 DEG C,
More preferably more than 120 DEG C.Thereby, it is possible to more effectively improve the thermostability of fingerprint sensor.On the other hand, above-mentioned vitrification
The higher limit of transition temperature is not particularly limited, for example, can be 250 DEG C.
In the present embodiment, linear expansion coefficient below glass transition temperature for the firming body of composition epoxy resin
(CTE1) it is preferably more than 3ppm/ DEG C, more preferably more than 6ppm/ DEG C.In addition, the line below glass transition temperature expands
Coefficient (CTE1) is for example preferably less than 50ppm/ DEG C, more preferably less than 30ppm/ DEG C.Control CTE1, Neng Gougeng by such
It is reliably suppressed sticking up of the fingerprint sensor being caused by the difference of substrate 101 (such as silicon chip) and the linear expansion coefficient of dielectric film 105
Bent.
In the present embodiment, the line when exceeding glass transition temperature for the firming body of composition epoxy resin expands system
Number (CTE2) is preferably more than 10ppm/ DEG C.In addition, the linear expansion coefficient (CTE2) exceeding during glass transition temperature is for example excellent
Elect less than 100ppm/ DEG C as.Control CTE2 by such, can more reliably suppress especially in high temperature environments, by substrate 101
The warpage of the fingerprint sensor that the difference of the linear expansion coefficient of (such as silicon chip) and dielectric film 105 causes.
The above-mentioned glass transition temperature of the firming body of composition epoxy resin and above-mentioned linear expansion coefficient (CTE1, CTE2)
For example can be measured as described below.
First, in the case that composition epoxy resin is for lamellar, the firming body of composition epoxy resin for example passes through to make
With transmit forming machine, 175 DEG C of mold temperature, injection pressure 9.8MPa, under conditions of 300 seconds hardening times, by above-mentioned epoxy
Resin combination injection molding and obtain.This firming body is, for example, length 10mm, width 4mm, thickness 4mm.
In addition, in the case that composition epoxy resin is for bulk material, the firming body of composition epoxy resin for example passes through
Using compressing forming machine, 175 DEG C of mold temperature, forming pressure 9.8MPa, under conditions of 300 seconds hardening times, by above-mentioned ring
Epoxy resin composition injection molding and obtain.This firming body is, for example, length 10mm, width 4mm, thickness 4mm.
Then, by obtained firming body after 175 DEG C of solidify afterwards carrying out 4 hours, using thermo-mechanical analysis device (essence
Work electronics industry Co., Ltd. manufactures, TMA100), in the bar of 0 DEG C~320 DEG C of temperature of the measurement scope, 5 DEG C/min of programming rate
It is measured under part.Glass transition temperature is calculated according to this measurement result, the line below glass transition temperature expands
Coefficient (CTE1), the linear expansion coefficient (CTE2) when exceeding glass transition temperature.
Above-mentioned glass transition temperature, the linear expansion coefficient (CTE1) below glass transition temperature, exceeding glass
The linear expansion coefficient (CTE2) changed during transition temperature can be by the kind of the suitable each composition adjusting and constituting composition epoxy resin
Class and/or mixing ratio are being controlled.In the present embodiment, as the factor for controlling CTE1, CTE2, especially can arrange
Lift the species suitably selecting inorganic filler (B).For example, by using the little silica dioxide granule of linear expansion coefficient as inorganic
Filler (B), can reduce CTE1 and CTE2 of the firming body of composition epoxy resin.
Hereinafter, the structure of the capacitance type fingerprint sensor 100 of present embodiment is described in detail.
The capacitance type fingerprint sensor 100 of present embodiment for example is by perceiving quiet with the electrostatic capacitance of finger
Electric capacitive way is reading the fingerprint sensor of finger print information.Here, fingerprint sensor reads is placed on this fingerprint sensor
On finger concavo-convex.Such as capacitance type fingerprint sensor 100 is provided with the concavo-convex more tiny detecting electrode than fingerprint
103.And, generated using the electrostatic capacitance of accumulation between the concavo-convex of fingerprint and detecting electrode 103 and represent the concavo-convex of fingerprint
Two dimensional image.For example, because different with the electrostatic capacitance that recess detects in the protuberance of fingerprint, it is possible to according to this electrostatic
The difference of electric capacity represents the concavo-convex two dimensional image of fingerprint to generate.Finger print information can be read by this two dimensional image.
Fig. 1 is the sectional view of the capacitance type fingerprint sensor 100 schematically showing present embodiment.
The capacitance type fingerprint sensor 100 of present embodiment possesses:Substrate 101;Setting detection on the substrate 101
Electrode 103;With the dielectric film 105 sealing detecting electrode 103.
In the present embodiment, dielectric film 105 is formed by the solidfied material of composition epoxy resin.As epoxy composite
Thing, for example, can use:Above-mentioned equipment known to each components utilising is mixed, further with roller, kneader or crowded
Go out the kneading machines such as machine and carry out melting mixing, material obtained from pulverizing after cooling;Compression molding obtains for lamellar after being pulverized
Material;Material etc. suitably obtained from adjustment dispersion and/or mobility etc. as needed.
In order to improve the sensitivity of fingerprint sensor, the thickness D of the dielectric film 105 on substrate 101 (such as silicon chip) is for example
For less than 100 μm, more preferably less than 75 μm, more preferably less than 50 μm.
Substrate 101 is, for example, the silicon substrate of lamellar.Detecting electrode 103 is for example formed by Al film, on the substrate 101 across layer
Between film 107 be configured to one-dimensional or two-dimensional array shape.Interlayer film 107 is for example by SiO2Deng formation.
The upper surface of detecting electrode 103 is covered by dielectric film 105.Detecting electrode 103 for example implements wire bonding.
The capacitance type fingerprint sensor 100 of present embodiment can be based on known information manufacture.For example such as following
Manufacture like that.
First, on the substrate 101 after setting interlayer film 107, detecting electrode 103 is formed on interlayer film 107.Then, profit
With composition epoxy resin by detecting electrode 103 seal molding.As manufacturing process, for example, can enumerate transmission forming process or compression
The method of forming, cast molding etc..Then, make composition epoxy resin heat cure, form dielectric film 105.Thus, obtain this embodiment party
The capacitance type fingerprint sensor 100 of formula.
Then, the effect of present embodiment is described.
According to present embodiment, dielectric film 105 that detecting electrode 103 is sealed is by containing epoxy resin (A) with inorganic fill out
The solidfied material filling the composition epoxy resin of agent (B) is constituted.The solidfied material of composition epoxy resin, dielectric property is excellent, therefore
The sensitivity of capacitance type fingerprint sensor 100 can be improved.
[embodiment]
Then, embodiments of the invention are illustrated.
(preparation of composition epoxy resin)
For embodiment 1~9, prepare composition epoxy resin as described below.First, will be according to using high-speed mixer
Each composition of table 1 cooperation mixes at normal temperatures.Then, obtained mixture is carried out roller mixing (high temperature side roll surface temperature
90 DEG C, 25 DEG C of low temperature side roll surface temperature) after, obtain composition epoxy resin by cooling with using the pulverizing of blender.
In addition, the details of each composition in table 1 is as described below.
(A) epoxy resin
Epoxy resin 1:Biphenyl type epoxy resin (Mitsubishi chemical Co., Ltd manufactures, YX-4000K)
(B) inorganic filler
Inorganic filler 1:(Deuki Kagaku Kogyo Co., Ltd manufactures aluminium oxide, DAB-45SI, D50=17 μm)
Inorganic filler 2:(Deuki Kagaku Kogyo Co., Ltd manufactures silicon dioxide, FB105, D50=10 μm)
Inorganic filler 3:(Tokuyama Corp manufactures silicon dioxide, REOLOSIL CP-102, D50Less than=1 μm)
Inorganic filler 4:(Co., Ltd. Admatechs manufactures silicon dioxide, SO-25R, D50=0.5 μm)
Inorganic filler 5:(Ishihara Sangyo Kaisha, Ltd. manufactures titanium oxide (IV), PF-726, D50=1 μm, rutile-type,
Particle diameter is the content of more than 32 μm of titanium oxide is below 5 mass %)
Inorganic filler 6:(Nippon Chemical Ind manufactures Barium metatitanate., パ Le セ ラ system (Palceram) BT-
UP2, D50=2 μm, particle diameter is the content of more than 32 μm of Barium metatitanate. is below 5 mass %)
Inorganic filler 7:(Micron Inc. manufactures aluminium oxide, AX3-15R, and particle diameter is containing of more than 15 μm of aluminium oxide
Measure below for 5 mass %, D50=4 μm)
(C) firming agent
Firming agent 1:Triphenol methylmethane type phenol resol resins (MEH-7500, bright and chemical conversion Co., Ltd. manufactures)
Firming agent 2:Triphenol methylmethane type phenol resol resins (HE910-20, AIR WATER INC. manufacture)
(D) coupling agent
Coupling agent 1:N- phenyl-gamma-amino propyl trimethoxy silicane (Dong Li DOW CORNING Co., Ltd. (Dow
Corning Toray Co., Ltd.) manufacture, CF4083)
(E) other compositions
Curing accelerator 1:The curing accelerator being represented by following formula (4)
[synthetic method of curing accelerator 1]
4,4'- bisphenol S and the 100ml of 37.5g (0.15 mole) is loaded in the detachable flask with agitating device
Methanol, at room temperature be stirred dissolve, and stir add in advance in the methanol of 50ml dissolving 4.0g
The solution obtained from sodium hydroxide of (0.1 mole).Then, add in advance in the methanol of 150ml dissolving 41.9g (0.1 rubs
You) solution obtained from tetraphenylphosphonibromide bromide.Continue stirring a moment, after the methanol of additional 300ml, by the solution one in flask
Side is stirred while dropping in substantial amounts of water, obtains white precipitate.Precipitation is carried out filtering, is dried, obtains consolidating of white crystals
Change accelerator 1.
Curing accelerator 2:The curing accelerator being represented by following formula (5)
[synthetic method of curing accelerator 2]
The phenyltrimethoxysila,e of 249.5g and the 2,3- dihydroxy of 384.0g is added in the flask equipped with 1800g methanol
Base naphtho- makes it dissolve, then Deca 28% Feldalat NM-methanol solution 231.5g under stirring at room temperature.It is stirred at room temperature further
Under wherein Deca pre-prepd by 503.0g tetraphenylphosphonibromide bromide be dissolved in 600g methanol obtained from solution, separate out knot
Brilliant.The crystallization of precipitation is carried out filtering, washes, is vacuum dried, obtains the curing accelerator 2 of Fructus Persicae white crystals.
Low stress agent 1:(Ube Industries, Ltd manufactures acrylonitrile butadiene rubber, carboxyl terminal butadiene acrylic acid
Rubber, CTBN1008SP)
Low stress agent 2:Silicone oil
Coloring agent:White carbon black
Releasing agent:Brazil wax
Ion capturing agent:Brucite
(mensure of relative dielectric constant and dielectric loss angle tangent)
For embodiment 1~9, carry out relative dielectric constant and the dielectric loss angle of composition epoxy resin as described below
The mensure of tangent.Using low pressure transmission forming machine (Shang Longjing machine Co., Ltd. (Kohtaki Precision Machine Co.,
Ltd " KTS-30 ") manufacturing), 175 DEG C of mold temperature, injection pressure 9.8MPa, under conditions of 300 seconds hardening times, in mould
By above-mentioned composition epoxy resin injection molding in tool, thus obtain the firming body of composition epoxy resin.This firming body is straight
Footpath 50mm, thickness 3mm.
Then, to obtained firming body, using the Q-METER of YOKOGAWA-HEWLETT PACKARD company manufacture
Relative dielectric constant under 4342A mensure 1MHz, room temperature (25 DEG C) and dielectric loss angle tangent.Show the result in table 1.
(mensure of spiral flow)
For embodiment 1~9, the spiral flow carrying out composition epoxy resin as described below measures.Transmitted using low pressure
Forming machine (" KTS-15 " that Shang Longjing machine Co., Ltd. manufactures), in 175 DEG C of mold temperature, injection pressure 9.8MPa, injection
Between 15 seconds, under conditions of 180 seconds hardening times, injection asphalt mixtures modified by epoxy resin in the mould that the spiral flow according to EMMI-1-66 measures
Oil/fat composition, measures length of flow.Unit in table 1 is cm.Show the result in table 1.
(glass transition temperature, linear expansion coefficient)
For each embodiment, measure the glass transition temperature of the firming body of composition epoxy resin as described below
(Tg), linear expansion coefficient (CTE1, CTE2).Transmit the forming machine (" KTS- that Shang Longjing machine Co., Ltd. manufactures using low pressure
30 "), 175 DEG C of mold temperature, injection pressure 9.8MPa, under conditions of 300 seconds hardening times, in a mold by above-mentioned epoxy
Resin combination injection molding, thus obtains the firming body of composition epoxy resin.This firming body be length 10mm, width 4mm,
Thickness 4mm.
Then, by obtained firming body after 175 DEG C of solidify afterwards carrying out 4 hours, using thermo-mechanical analysis device (essence
Work electronics industry Co., Ltd. manufactures, TMA100), in the bar of 0 DEG C~320 DEG C of temperature of the measurement scope, 5 DEG C/min of programming rate
It is measured under part.Glass transition temperature (Tg), the line below glass transition temperature are calculated according to this measurement result
The coefficient of expansion (CTE1), the linear expansion coefficient (CTE2) when exceeding glass transition temperature.Show the result in table 1.
(sensitivity determination of capacitance type fingerprint sensor)
For each embodiment in embodiment 1~9, made shown in Fig. 1 using obtained composition epoxy resin
Capacitance type fingerprint sensor.Then, made using obtained capacitance type fingerprint sensor and represent the concavo-convex of fingerprint
Two dimensional image.
[table 1]
The capacitance type fingerprint sensor being obtained by embodiment 1~9, all clearly shows the two dimensional image of fingerprint,
Show the good result of sensitivity.In these, the especially excellent embodiment of dielectric property 2~9 compared with Example 1, obtains
Arrive the two dimensional image of apparent fingerprint, show excellent sensitivity.In addition, embodiment 1~3,6~7 and 9 is shaping
Property test in show excellent result.
In addition, the capacitance type fingerprint sensor being obtained by embodiment 1~9, warpage is all suppressed.In addition, by
The CTE1 of the firming body of the composition epoxy resin that embodiment 1~9 obtains less than 50ppm/ DEG C of scope all more than 3ppm/ DEG C
Interior.In addition, the CTE2 of the firming body of the composition epoxy resin being obtained by embodiment 1~9 100ppm/ all more than 10ppm/ DEG C
In scope below DEG C.
In addition, making the thinning sensitivity that can be related to fingerprint sensor of thickness D of dielectric film 105, therefore, inorganic filler
(B) being not filled by when shaping can be suppressed using material obtained from cutting coarse grain, therefore preferably.The epoxy of embodiment 7~9
Resin combination, though make dielectric film 105 thickness D be 50 μm it is also possible to not shape with being not filled by, with embodiment 1~6
Composition epoxy resin is compared, and has excellent formability.In addition, the composition epoxy resin of embodiment 7~9, even if making dielectric film 105
Thickness D be 50 μm, do not produce the warpage of fingerprint sensor yet.That is, the composition epoxy resin of embodiment 7~9, clearly
Show the two dimensional image of fingerprint, while showing good sensitivity, show more excellent formability.
The Japanese patent application 2014-062446 that the application advocates to file an application based on March 25th, 2014 preferential
Power, its entire disclosure is applied in the application.
Claims (12)
1. a kind of composition epoxy resin, it is used for forming the dielectric film constituting capacitance type fingerprint sensor, described electrostatic
Capacitance type fingerprint sensor possesses substrate, setting detecting electrode on the substrate and described in sealing described detecting electrode
Dielectric film, described composition epoxy resin is characterised by, contains:
Epoxy resin (A);With
Inorganic filler (B).
2. composition epoxy resin according to claim 1 it is characterised in that:
The firming body of described composition epoxy resin is in the relative dielectric constant (ε of 1MHzr) it is more than 5.
3. resin composition for encapsulating according to claim 2 it is characterised in that:
The firming body of described composition epoxy resin is in the relative dielectric constant (ε of 1MHzr) it is more than 8.
4. the composition epoxy resin according to any one of claims 1 to 3 it is characterised in that:
The firming body of described composition epoxy resin is more than 0.005 in the dielectric loss angle tangent (tan δ) of 1MHz.
5. the composition epoxy resin according to any one of Claims 1 to 4 it is characterised in that:
Described inorganic filler (B) is contained selected from one of aluminium oxide, titanium oxide and Barium metatitanate. or two or more.
6. composition epoxy resin according to claim 5 it is characterised in that:
Described inorganic filler (B) contains described titanium oxide,
Described titanium oxide is rutile-type.
7. the composition epoxy resin according to claim 5 or 6 it is characterised in that:
Described inorganic filler (B) also contains silica dioxide granule.
8. the composition epoxy resin according to any one of claim 1~7 it is characterised in that:
The stream being recorded by spiral flow under conditions of 15 seconds in 175 DEG C of mold temperature, injection pressure 9.8MPa, injection length
Dynamic length is more than 30cm below 200cm.
9. the composition epoxy resin according to any one of claim 1~8 it is characterised in that:
The glass transition temperature of the firming body of described composition epoxy resin is more than 100 DEG C.
10. the composition epoxy resin according to any one of claim 1~9 it is characterised in that:
Linear expansion coefficient (CTE1) below glass transition temperature for the firming body of described composition epoxy resin is 3ppm/ DEG C
Above less than 50ppm/ DEG C.
11. composition epoxy resins according to any one of claim 1~10 it is characterised in that:
The linear expansion coefficient (CTE2) when exceeding glass transition temperature for the firming body of described composition epoxy resin is
Less than more than 10ppm/ DEG C 100ppm/ DEG C.
A kind of 12. capacitance type fingerprint sensors are it is characterised in that possess:
Substrate;
Setting detecting electrode on the substrate;With
Described detecting electrode is sealed and the solidfied material by the composition epoxy resin any one of claim 1~11
The dielectric film being formed.
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
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JP2014-062446 | 2014-03-25 | ||
JP2014062446 | 2014-03-25 | ||
PCT/JP2015/058413 WO2015146816A1 (en) | 2014-03-25 | 2015-03-20 | Epoxy resin composition and electrostatic-capacitance-type fingerprint sensor |
Publications (1)
Publication Number | Publication Date |
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CN106461366A true CN106461366A (en) | 2017-02-22 |
Family
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CN201580015950.4A Pending CN106461366A (en) | 2014-03-25 | 2015-03-20 | Epoxy resin composition and electrostatic-capacitance-type fingerprint sensor |
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JP (2) | JP6658508B2 (en) |
KR (1) | KR101827668B1 (en) |
CN (1) | CN106461366A (en) |
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WO (1) | WO2015146816A1 (en) |
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CN116457417A (en) * | 2021-02-10 | 2023-07-18 | 三菱瓦斯化学株式会社 | Resin composition, prepreg, resin sheet, laminate, metal foil-clad laminate, and printed wiring board |
US12134696B2 (en) | 2021-02-10 | 2024-11-05 | Mitsubishi Gas Chemical Company, Inc. | Resin composition, prepreg, resin sheet, laminate, metal foil-clad laminate, and printed wiring board |
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KR20160135802A (en) | 2016-11-28 |
JP6658508B2 (en) | 2020-03-04 |
JP2020063459A (en) | 2020-04-23 |
JPWO2015146816A1 (en) | 2017-04-13 |
TWI659058B (en) | 2019-05-11 |
KR101827668B1 (en) | 2018-02-08 |
WO2015146816A1 (en) | 2015-10-01 |
TW201546165A (en) | 2015-12-16 |
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