CN106460213B - Cyanogen type electrolytic gold plating bath and the method for forming bump for using it - Google Patents
Cyanogen type electrolytic gold plating bath and the method for forming bump for using it Download PDFInfo
- Publication number
- CN106460213B CN106460213B CN201580022227.9A CN201580022227A CN106460213B CN 106460213 B CN106460213 B CN 106460213B CN 201580022227 A CN201580022227 A CN 201580022227A CN 106460213 B CN106460213 B CN 106460213B
- Authority
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- China
- Prior art keywords
- bump
- gold plating
- plating bath
- film
- type electrolytic
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- JMANVNJQNLATNU-UHFFFAOYSA-N oxalonitrile Chemical compound N#CC#N JMANVNJQNLATNU-UHFFFAOYSA-N 0.000 title claims abstract description 92
- 239000010931 gold Substances 0.000 title claims abstract description 81
- 229910052737 gold Inorganic materials 0.000 title claims abstract description 75
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 title claims abstract description 74
- 238000007747 plating Methods 0.000 title claims abstract description 72
- 238000000034 method Methods 0.000 title claims description 26
- MUBZPKHOEPUJKR-UHFFFAOYSA-N Oxalic acid Chemical compound OC(=O)C(O)=O MUBZPKHOEPUJKR-UHFFFAOYSA-N 0.000 claims abstract description 18
- 150000004676 glycans Chemical class 0.000 claims abstract description 16
- 229920001282 polysaccharide Polymers 0.000 claims abstract description 16
- 239000005017 polysaccharide Substances 0.000 claims abstract description 16
- 150000003839 salts Chemical class 0.000 claims abstract description 14
- 150000003891 oxalate salts Chemical class 0.000 claims abstract description 11
- 238000002425 crystallisation Methods 0.000 claims abstract description 9
- 230000008025 crystallization Effects 0.000 claims abstract description 9
- 150000007522 mineralic acids Chemical class 0.000 claims abstract description 8
- 239000003607 modifier Substances 0.000 claims abstract description 8
- 229910052751 metal Inorganic materials 0.000 claims abstract description 7
- 239000002184 metal Substances 0.000 claims abstract description 7
- 235000006408 oxalic acid Nutrition 0.000 claims abstract description 6
- SDKPSXWGRWWLKR-UHFFFAOYSA-M sodium;9,10-dioxoanthracene-1-sulfonate Chemical compound [Na+].O=C1C2=CC=CC=C2C(=O)C2=C1C=CC=C2S(=O)(=O)[O-] SDKPSXWGRWWLKR-UHFFFAOYSA-M 0.000 claims abstract 2
- 238000010438 heat treatment Methods 0.000 claims description 26
- 239000004065 semiconductor Substances 0.000 claims description 24
- 150000001875 compounds Chemical class 0.000 claims description 14
- 229920000858 Cyclodextrin Polymers 0.000 claims description 3
- 239000001116 FEMA 4028 Substances 0.000 claims description 3
- WHGYBXFWUBPSRW-FOUAGVGXSA-N beta-cyclodextrin Chemical compound OC[C@H]([C@H]([C@@H]([C@H]1O)O)O[C@H]2O[C@@H]([C@@H](O[C@H]3O[C@H](CO)[C@H]([C@@H]([C@H]3O)O)O[C@H]3O[C@H](CO)[C@H]([C@@H]([C@H]3O)O)O[C@H]3O[C@H](CO)[C@H]([C@@H]([C@H]3O)O)O[C@H]3O[C@H](CO)[C@H]([C@@H]([C@H]3O)O)O3)[C@H](O)[C@H]2O)CO)O[C@@H]1O[C@H]1[C@H](O)[C@@H](O)[C@@H]3O[C@@H]1CO WHGYBXFWUBPSRW-FOUAGVGXSA-N 0.000 claims description 3
- 235000011175 beta-cyclodextrine Nutrition 0.000 claims description 3
- 229960004853 betadex Drugs 0.000 claims description 3
- FYGDTMLNYKFZSV-URKRLVJHSA-N (2s,3r,4s,5s,6r)-2-[(2r,4r,5r,6s)-4,5-dihydroxy-2-(hydroxymethyl)-6-[(2r,4r,5r,6s)-4,5,6-trihydroxy-2-(hydroxymethyl)oxan-3-yl]oxyoxan-3-yl]oxy-6-(hydroxymethyl)oxane-3,4,5-triol Chemical compound O[C@@H]1[C@@H](O)[C@H](O)[C@@H](CO)O[C@H]1OC1[C@@H](CO)O[C@@H](OC2[C@H](O[C@H](O)[C@H](O)[C@H]2O)CO)[C@H](O)[C@H]1O FYGDTMLNYKFZSV-URKRLVJHSA-N 0.000 claims description 2
- 229920001450 Alpha-Cyclodextrin Polymers 0.000 claims description 2
- 229920002498 Beta-glucan Polymers 0.000 claims description 2
- HFHDHCJBZVLPGP-RWMJIURBSA-N alpha-cyclodextrin Chemical compound OC[C@H]([C@H]([C@@H]([C@H]1O)O)O[C@H]2O[C@@H]([C@@H](O[C@H]3O[C@H](CO)[C@H]([C@@H]([C@H]3O)O)O[C@H]3O[C@H](CO)[C@H]([C@@H]([C@H]3O)O)O[C@H]3O[C@H](CO)[C@H]([C@@H]([C@H]3O)O)O3)[C@H](O)[C@H]2O)CO)O[C@@H]1O[C@H]1[C@H](O)[C@@H](O)[C@@H]3O[C@@H]1CO HFHDHCJBZVLPGP-RWMJIURBSA-N 0.000 claims description 2
- 229940043377 alpha-cyclodextrin Drugs 0.000 claims description 2
- 230000015572 biosynthetic process Effects 0.000 claims description 2
- 238000001953 recrystallisation Methods 0.000 claims description 2
- 241000416536 Euproctis pseudoconspersa Species 0.000 claims 1
- 229920002120 photoresistant polymer Polymers 0.000 description 19
- 239000000758 substrate Substances 0.000 description 15
- 235000012431 wafers Nutrition 0.000 description 15
- 239000007788 liquid Substances 0.000 description 9
- JAJIPIAHCFBEPI-UHFFFAOYSA-N 9,10-dioxoanthracene-1-sulfonic acid Chemical compound O=C1C2=CC=CC=C2C(=O)C2=C1C=CC=C2S(=O)(=O)O JAJIPIAHCFBEPI-UHFFFAOYSA-N 0.000 description 7
- 230000000052 comparative effect Effects 0.000 description 6
- 239000002245 particle Substances 0.000 description 6
- 239000000853 adhesive Substances 0.000 description 5
- 230000001070 adhesive effect Effects 0.000 description 5
- 244000248349 Citrus limon Species 0.000 description 4
- 235000005979 Citrus limon Nutrition 0.000 description 4
- 230000005611 electricity Effects 0.000 description 4
- 239000004615 ingredient Substances 0.000 description 4
- 239000000203 mixture Substances 0.000 description 4
- 150000007524 organic acids Chemical class 0.000 description 4
- LWIHDJKSTIGBAC-UHFFFAOYSA-K tripotassium phosphate Chemical compound [K+].[K+].[K+].[O-]P([O-])([O-])=O LWIHDJKSTIGBAC-UHFFFAOYSA-K 0.000 description 4
- KWYUFKZDYYNOTN-UHFFFAOYSA-M Potassium hydroxide Chemical compound [OH-].[K+] KWYUFKZDYYNOTN-UHFFFAOYSA-M 0.000 description 3
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 3
- HEMHJVSKTPXQMS-UHFFFAOYSA-M Sodium hydroxide Chemical compound [OH-].[Na+] HEMHJVSKTPXQMS-UHFFFAOYSA-M 0.000 description 3
- 239000003795 chemical substances by application Substances 0.000 description 3
- KRKNYBCHXYNGOX-UHFFFAOYSA-N citric acid Chemical compound OC(=O)CC(O)(C(O)=O)CC(O)=O KRKNYBCHXYNGOX-UHFFFAOYSA-N 0.000 description 3
- 238000000354 decomposition reaction Methods 0.000 description 3
- 238000005868 electrolysis reaction Methods 0.000 description 3
- 238000009713 electroplating Methods 0.000 description 3
- 230000005496 eutectics Effects 0.000 description 3
- 239000012535 impurity Substances 0.000 description 3
- 238000005259 measurement Methods 0.000 description 3
- 229910052710 silicon Inorganic materials 0.000 description 3
- 239000010703 silicon Substances 0.000 description 3
- 230000000007 visual effect Effects 0.000 description 3
- QGZKDVFQNNGYKY-UHFFFAOYSA-O Ammonium Chemical compound [NH4+] QGZKDVFQNNGYKY-UHFFFAOYSA-O 0.000 description 2
- XFXPMWWXUTWYJX-UHFFFAOYSA-N Cyanide Chemical compound N#[C-] XFXPMWWXUTWYJX-UHFFFAOYSA-N 0.000 description 2
- 229920001353 Dextrin Polymers 0.000 description 2
- 239000004375 Dextrin Substances 0.000 description 2
- 229910019142 PO4 Inorganic materials 0.000 description 2
- NBIIXXVUZAFLBC-UHFFFAOYSA-N Phosphoric acid Chemical compound OP(O)(O)=O NBIIXXVUZAFLBC-UHFFFAOYSA-N 0.000 description 2
- 230000004087 circulation Effects 0.000 description 2
- 238000007906 compression Methods 0.000 description 2
- 238000010276 construction Methods 0.000 description 2
- 238000011161 development Methods 0.000 description 2
- 235000019425 dextrin Nutrition 0.000 description 2
- 238000005530 etching Methods 0.000 description 2
- 150000004675 formic acid derivatives Chemical class 0.000 description 2
- 239000003292 glue Substances 0.000 description 2
- 238000005304 joining Methods 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- BDAGIHXWWSANSR-UHFFFAOYSA-N methanoic acid Natural products OC=O BDAGIHXWWSANSR-UHFFFAOYSA-N 0.000 description 2
- 239000003002 pH adjusting agent Substances 0.000 description 2
- 239000010452 phosphate Substances 0.000 description 2
- NBIIXXVUZAFLBC-UHFFFAOYSA-K phosphate Chemical compound [O-]P([O-])([O-])=O NBIIXXVUZAFLBC-UHFFFAOYSA-K 0.000 description 2
- 238000001259 photo etching Methods 0.000 description 2
- 229910000160 potassium phosphate Inorganic materials 0.000 description 2
- 235000011009 potassium phosphates Nutrition 0.000 description 2
- 230000001376 precipitating effect Effects 0.000 description 2
- 229920005989 resin Polymers 0.000 description 2
- 239000011347 resin Substances 0.000 description 2
- HJTAZXHBEBIQQX-UHFFFAOYSA-N 1,5-bis(chloromethyl)naphthalene Chemical compound C1=CC=C2C(CCl)=CC=CC2=C1CCl HJTAZXHBEBIQQX-UHFFFAOYSA-N 0.000 description 1
- OSWFIVFLDKOXQC-UHFFFAOYSA-N 4-(3-methoxyphenyl)aniline Chemical compound COC1=CC=CC(C=2C=CC(N)=CC=2)=C1 OSWFIVFLDKOXQC-UHFFFAOYSA-N 0.000 description 1
- VHUUQVKOLVNVRT-UHFFFAOYSA-N Ammonium hydroxide Chemical compound [NH4+].[OH-] VHUUQVKOLVNVRT-UHFFFAOYSA-N 0.000 description 1
- KRKNYBCHXYNGOX-UHFFFAOYSA-K Citrate Chemical compound [O-]C(=O)CC(O)(CC([O-])=O)C([O-])=O KRKNYBCHXYNGOX-UHFFFAOYSA-K 0.000 description 1
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 1
- 229920001503 Glucan Polymers 0.000 description 1
- ITVZBSJBDLFONY-UHFFFAOYSA-N N.[Au](C#N)(C#N)C#N Chemical compound N.[Au](C#N)(C#N)C#N ITVZBSJBDLFONY-UHFFFAOYSA-N 0.000 description 1
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 1
- ZLMJMSJWJFRBEC-UHFFFAOYSA-N Potassium Chemical compound [K] ZLMJMSJWJFRBEC-UHFFFAOYSA-N 0.000 description 1
- 230000002159 abnormal effect Effects 0.000 description 1
- 230000003213 activating effect Effects 0.000 description 1
- 239000004411 aluminium Substances 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 229910000147 aluminium phosphate Inorganic materials 0.000 description 1
- 239000000908 ammonium hydroxide Substances 0.000 description 1
- GOLCXWYRSKYTSP-UHFFFAOYSA-N arsenic trioxide Inorganic materials O1[As]2O[As]1O2 GOLCXWYRSKYTSP-UHFFFAOYSA-N 0.000 description 1
- 230000033228 biological regulation Effects 0.000 description 1
- 239000007767 bonding agent Substances 0.000 description 1
- 239000003153 chemical reaction reagent Substances 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- IRXRGVFLQOSHOH-UHFFFAOYSA-L dipotassium;oxalate Chemical compound [K+].[K+].[O-]C(=O)C([O-])=O IRXRGVFLQOSHOH-UHFFFAOYSA-L 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 239000003822 epoxy resin Substances 0.000 description 1
- 239000012530 fluid Substances 0.000 description 1
- 235000019253 formic acid Nutrition 0.000 description 1
- -1 gold ion Chemical class 0.000 description 1
- JCDVTZPJEWWGHU-UHFFFAOYSA-N gold sulfurous acid Chemical compound [Au].S(O)(O)=O JCDVTZPJEWWGHU-UHFFFAOYSA-N 0.000 description 1
- IZLAVFWQHMDDGK-UHFFFAOYSA-N gold(1+);cyanide Chemical compound [Au+].N#[C-] IZLAVFWQHMDDGK-UHFFFAOYSA-N 0.000 description 1
- 238000013007 heat curing Methods 0.000 description 1
- 230000002401 inhibitory effect Effects 0.000 description 1
- 230000010354 integration Effects 0.000 description 1
- 238000011835 investigation Methods 0.000 description 1
- 238000003475 lamination Methods 0.000 description 1
- PIJPYDMVFNTHIP-UHFFFAOYSA-L lead sulfate Chemical compound [PbH4+2].[O-]S([O-])(=O)=O PIJPYDMVFNTHIP-UHFFFAOYSA-L 0.000 description 1
- GVALZJMUIHGIMD-UHFFFAOYSA-H magnesium phosphate Chemical compound [Mg+2].[Mg+2].[Mg+2].[O-]P([O-])([O-])=O.[O-]P([O-])([O-])=O GVALZJMUIHGIMD-UHFFFAOYSA-H 0.000 description 1
- 239000004137 magnesium phosphate Substances 0.000 description 1
- 229960002261 magnesium phosphate Drugs 0.000 description 1
- 229910000157 magnesium phosphate Inorganic materials 0.000 description 1
- 235000010994 magnesium phosphates Nutrition 0.000 description 1
- FYWSTUCDSVYLPV-UHFFFAOYSA-N nitrooxythallium Chemical compound [Tl+].[O-][N+]([O-])=O FYWSTUCDSVYLPV-UHFFFAOYSA-N 0.000 description 1
- 239000006259 organic additive Substances 0.000 description 1
- 229940116315 oxalic acid Drugs 0.000 description 1
- 238000000059 patterning Methods 0.000 description 1
- 235000021317 phosphate Nutrition 0.000 description 1
- 239000011574 phosphorus Substances 0.000 description 1
- 229910052698 phosphorus Inorganic materials 0.000 description 1
- 235000014786 phosphorus Nutrition 0.000 description 1
- 230000000704 physical effect Effects 0.000 description 1
- 229920001515 polyalkylene glycol Polymers 0.000 description 1
- 229920000647 polyepoxide Polymers 0.000 description 1
- 239000011591 potassium Substances 0.000 description 1
- 229960003975 potassium Drugs 0.000 description 1
- 229910052700 potassium Inorganic materials 0.000 description 1
- 239000001508 potassium citrate Substances 0.000 description 1
- 229960002635 potassium citrate Drugs 0.000 description 1
- QEEAPRPFLLJWCF-UHFFFAOYSA-K potassium citrate (anhydrous) Chemical compound [K+].[K+].[K+].[O-]C(=O)CC(O)(CC([O-])=O)C([O-])=O QEEAPRPFLLJWCF-UHFFFAOYSA-K 0.000 description 1
- 235000011082 potassium citrates Nutrition 0.000 description 1
- WFIZEGIEIOHZCP-UHFFFAOYSA-M potassium formate Chemical compound [K+].[O-]C=O WFIZEGIEIOHZCP-UHFFFAOYSA-M 0.000 description 1
- 239000000047 product Substances 0.000 description 1
- 239000003566 sealing material Substances 0.000 description 1
- ZNCPFRVNHGOPAG-UHFFFAOYSA-L sodium oxalate Chemical compound [Na+].[Na+].[O-]C(=O)C([O-])=O ZNCPFRVNHGOPAG-UHFFFAOYSA-L 0.000 description 1
- 229940039790 sodium oxalate Drugs 0.000 description 1
- 239000001488 sodium phosphate Substances 0.000 description 1
- 229910000162 sodium phosphate Inorganic materials 0.000 description 1
- 235000011008 sodium phosphates Nutrition 0.000 description 1
- VMDSWYDTKFSTQH-UHFFFAOYSA-N sodium;gold(1+);dicyanide Chemical compound [Na+].[Au+].N#[C-].N#[C-] VMDSWYDTKFSTQH-UHFFFAOYSA-N 0.000 description 1
- 239000002904 solvent Substances 0.000 description 1
- 239000013589 supplement Substances 0.000 description 1
- 230000003746 surface roughness Effects 0.000 description 1
- 238000012360 testing method Methods 0.000 description 1
- 229910052716 thallium Inorganic materials 0.000 description 1
- BKVIYDNLLOSFOA-UHFFFAOYSA-N thallium Chemical compound [Tl] BKVIYDNLLOSFOA-UHFFFAOYSA-N 0.000 description 1
- YTQVHRVITVLIRD-UHFFFAOYSA-L thallium sulfate Chemical compound [Tl+].[Tl+].[O-]S([O-])(=O)=O YTQVHRVITVLIRD-UHFFFAOYSA-L 0.000 description 1
- 229940119523 thallium sulfate Drugs 0.000 description 1
- 229910000374 thallium(I) sulfate Inorganic materials 0.000 description 1
- UFVDXEXHBVQKGB-UHFFFAOYSA-L thallous malonate Chemical compound [Tl+].[Tl+].[O-]C(=O)CC([O-])=O UFVDXEXHBVQKGB-UHFFFAOYSA-L 0.000 description 1
- RYFMWSXOAZQYPI-UHFFFAOYSA-K trisodium phosphate Chemical compound [Na+].[Na+].[Na+].[O-]P([O-])([O-])=O RYFMWSXOAZQYPI-UHFFFAOYSA-K 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
- C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
- C25D3/00—Electroplating: Baths therefor
- C25D3/02—Electroplating: Baths therefor from solutions
- C25D3/48—Electroplating: Baths therefor from solutions of gold
-
- C—CHEMISTRY; METALLURGY
- C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
- C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
- C25D5/00—Electroplating characterised by the process; Pretreatment or after-treatment of workpieces
- C25D5/48—After-treatment of electroplated surfaces
- C25D5/50—After-treatment of electroplated surfaces by heat-treatment
-
- C—CHEMISTRY; METALLURGY
- C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
- C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
- C25D7/00—Electroplating characterised by the article coated
- C25D7/12—Semiconductors
- C25D7/123—Semiconductors first coated with a seed layer or a conductive layer
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/10—Bump connectors; Manufacturing methods related thereto
- H01L2224/11—Manufacturing methods
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/10—Bump connectors; Manufacturing methods related thereto
- H01L2224/15—Structure, shape, material or disposition of the bump connectors after the connecting process
- H01L2224/16—Structure, shape, material or disposition of the bump connectors after the connecting process of an individual bump connector
- H01L2224/161—Disposition
- H01L2224/16151—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/16221—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/16225—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L2224/31—Structure, shape, material or disposition of the layer connectors after the connecting process
- H01L2224/32—Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
- H01L2224/321—Disposition
- H01L2224/32151—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/32221—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/32225—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
- H01L2224/732—Location after the connecting process
- H01L2224/73201—Location after the connecting process on the same surface
- H01L2224/73203—Bump and layer connectors
- H01L2224/73204—Bump and layer connectors the bump connector being embedded into the layer connector
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L24/10—Bump connectors ; Manufacturing methods related thereto
- H01L24/12—Structure, shape, material or disposition of the bump connectors prior to the connecting process
- H01L24/13—Structure, shape, material or disposition of the bump connectors prior to the connecting process of an individual bump connector
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Electrochemistry (AREA)
- Materials Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Electroplating And Plating Baths Therefor (AREA)
- Electroplating Methods And Accessories (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
Abstract
According to the present invention, a kind of cyanogen type electrolytic gold plating bath is provided, is contained: as the cyaniding gold salt of Jin Yuan, 0.1~15g/L of down payment densimeter；Oxalates, 2.5~50g/L based on oxalic acid；Inorganic acid conducts 5~100g/L of salt；0.1~50g/L of water-soluble polysaccharides；And crystallization modifier can form the film hardness after being heat-treated by metal 0.1~100mg/L of densimeter as the au bump of 70~120HV.
Description
Technical field
The present invention relates to cyanogen type electrolytic gold plating baths.In addition, being related to using cyanogen system electricity in patterned semiconductor die on piece
Solve the method for forming bump that gold plating bath forms the au bump of regulation hardness.
Background technique
It is mounted on the method on printed circuit board as by semiconductor wafer, there is method for joining electrode.Electrode engagement side
Method is that the au bump that will be formed on the integrated circuit of semiconductor wafer and the electrode of substrate formed on printed circuit board connect
The method connect.Fig. 2 is an example for showing the structure for the printed circuit board that semiconductor chip is equipped with by method for joining electrode
Sectional view.
In Fig. 2,10 it is printed circuit board, 16 is semiconductor chip.In printed circuit board 10, in hard substrate 11
Surface multilayer board wiring pattern 12 and electrode of substrate 14.In semiconductor chip 16, the surface of semiconductor wafer 1 successively
Laminate circuits layer 1' and Al (aluminium) electrode 2, passivating film 3.The opening portion of passivating film 3 in the surface of Al electrode 2, stacks gradually
TiW sputtered film 4, golden sputtered film 5, au bump 7.
The electrode of substrate 14 of printed circuit board 10 and 7 electrical engagement of au bump of semiconductor chip 16.As electrically connecing
It closes, the method or eutectic bonding using anisotropically conducting adhesive 20 can be enumerated.Anisotropically conducting adhesive refers to by Ni/
The resin particle of Au coating covering is evenly dispersed in the bonding agent in the heat-curing resins such as epoxy resin.Eutectic bonding refers to
Eutectic is formed by thermo-compression bonding or ultrasonic wave, the electrode engagement that electrode of substrate is engaged with au bump.In Fig. 2, printed wiring
The electrode of substrate 14 of substrate 10 and the au bump 7 of semiconductor chip 16 pass through 20 electrical engagement of anisotropically conducting adhesive.
The film hardness of au bump 7 after heat treatment is 60HV or less.The film hardness of au bump 7 after heat treatment according to it is each to
Hardness and the material of electrode of substrate 14 of the conducting particles contained in anisotropic conductive adhesion agent 20 etc., it is suitable in 60HV range below
Preferably adjust.
In recent years, with the lightweight of the electronic equipments such as mobile phone or laptop, miniaturization, the development of high performance,
It is required that the miniaturization of electronic component.In the electronic component being miniaturized, the High Level of the integration density of circuit and small spacing
Development.In the printed circuit board and semiconductor wafer that will be provided with the narrow circuit that interelectrode spacing width is 5~20 μm
When electrical engagement, the bad phenomenon contacted between adjacent au bump is generated.Its reason is considered as due to by electrode of substrate
When being thermally compressed with salient point, au bump is deformed in the in-plane direction.Previous film hardness is come for 60HV au bump below
It says, film hardness is too low.Therefore, be unsuitable for and be provided with the narrow circuit of spacing width printed circuit board engagement.Therefore, it
Seek the au bump to be formed compared with the au bump manufactured in the past with higher film hardness.
As the electrolytic gold plating bath used when forming au bump, there is the non-cyanogen type electrolytic gold plating with sulfurous acid gold for Jin Yuan
Bath and be the cyanogen type electrolytic gold plating bath of Jin Yuan with gold cyanide.The high au bump of film hardness is formed in non-cyanogen type electrolytic gold plating bath
Method be well known (patent document 1).Patent Document 1 discloses be added with polyalkylene glycol and/or amphoteric surface
The non-cyanogen type electrolytic gold plating bath of activating agent.For the non-cyanogen type electrolytic gold plating bath, impurity is mixed into golden film, inhibits golden film
Recrystallizationization.As a result, the golden film of high rigidity can be formed.
Existing technical literature
Patent document
Patent document 1: special open 2009-57631 bulletin
Summary of the invention
Problems to be solved by the invention
Non-cyanogen type electrolytic gold plating bath disclosed in Patent Document 1 is compared with cyanogen type electrolytic gold plating bath, the cost of chemical reagent
It is high.In addition, the stability of gold plating bath is low, therefore the difficult management bathed.Therefore, because the appearance of cost effective requirement, bath management
Yi Xing, pass through improvement of the photoresist suitable for fine patterning of cyanogen type electrolytic gold plating bath etc., it is desirable to use cyanide electrolysis
The operator of gold plating bath increases.
But in cyanogen type electrolytic gold plating bath, even if adding organic additive in the same manner as non-cyanogen type electrolytic gold plating bath,
Impurity is hardly eutectoid out on being formed by golden film.Therefore, because being formed by the gold purity is high of golden film, cause to be heat-treated
After soften.That is, the cyanogen type electrolytic gold plating bath that can form the golden film of high rigidity is not also practical.
The purpose of the present invention is to provide can form the cyanogen type electrolytic gold plating bath of the high au bump of the film hardness after being heat-treated.
The means to solve the problem
The inventors of the present invention by further investigation as a result, it has been found that, pass through and add oxalates and water in cyanogen type electrolytic gold plating bath
Soluble polysaccharide class can form the high au bump of film hardness, so far complete the present invention.Solve the above subject the present invention such as with
It is lower described.
[1] cyanogen type electrolytic gold plating bath contains:
As the cyaniding gold salt of Jin Yuan, down payment 0.1~15g/L of densimeter,
Oxalates, 2.5~50g/L based on oxalic acid,
Inorganic acid conduction salt, 5~100g/L,
Water-soluble polysaccharides, 0.1~50g/L, and
Crystallization modifier, by 1~100mg/L of metal densimeter.
[2] cyanogen type electrolytic gold plating bath described in above-mentioned [1], wherein above-mentioned water-soluble polysaccharides are selected from dextrin, α-ring paste
It is one kind or two or more in essence, beta-cyclodextrin and glucan.
[3] cyanogen type electrolytic gold plating bath described in above-mentioned [1], wherein above-mentioned crystallization modifier is selected from Tl compound, Pbization
It closes one kind or two or more in object and As compound.
[4] method for forming bump, wherein use cyanide electrolysis described in [1] to [3] in patterned semiconductor die on piece
After gold plating bath carries out electrolytic gold plating, by carrying out heat treatment in 5~600 minutes at 200~300 DEG C, forming film hardness is 70
The au bump of~120HV.
Invention effect
The film hardness of the au bump formed using cyanogen type electrolytic gold plating bath of the invention is 70~120HV, is suitable for small spacing
Electronic component in semiconductor wafer and substrate electrical engagement.In addition, electrolytic gold plating bath of the invention is due to using cyaniding
Gold salt, compared with the electrolytic gold plating bath of non-cyanogen system, the management of bath is easy.It, can when using cyanogen type electrolytic gold plating bath of the invention
The au bump of high rigidity is formed with low cost.Therefore, the present invention helps to reduce the production cost of small-sized electronic part.
Detailed description of the invention
[Fig. 1] is the sectional view for showing an example of the au bump formed using cyanogen type electrolytic gold plating bath of the invention.
[Fig. 2] is the sectional view for showing an example being installed on semiconductor chip in the state of printed circuit board.
Specific embodiment
Cyanogen type electrolytic gold plating bath of the invention contains the cyaniding gold salt as Jin Yuan, oxalates, inorganic acid conduction salt, water-soluble
Property polysaccharide and crystallization modifier.The film of the au bump formed using cyanogen type electrolytic gold plating bath of the invention after heat treatment is hard
Degree is 70~120HV.Hereinafter, illustrating each ingredient for constituting cyanogen type electrolytic gold plating bath of the invention.
[cyaniding gold salt]
In cyanogen type electrolytic gold plating bath of the invention, well known cyaniding gold salt can be used as Jin Yuan without restriction.
As cyaniding gold salt, potassium auricyanide, gold sodium cyanide, gold cyanide ammonium can be illustrated.
The use level down payment concentration of cyaniding gold salt is calculated as 0.1~15g/L, preferably 4~15g/L.Gold concentration is less than 0.1g/
When L, cathode efficiency is low, and the thickness of golden film becomes unevenly, to cannot get desired golden film thickness.It is explained, golden film is thick
Preferably 10~20 μm of degree.When gold concentration is greater than 15g/L, cathode efficiency proportionally increases with gold ion concentration, thus
It is inefficent.In addition, due to electroplate liquid taking-up and cause the loss of metal to increase.Therefore, production cost increases.
[conduction salt]
Cyanogen type electrolytic gold plating bath of the invention simultaneously conducts salt with inorganic acid conduction salt and the organic acid at least containing oxalates.
When not using oxalates, plated film is slipped between photoresist and chip, is precipitated outside pattern without preferred because generating.That is, plated film
The electroplating film of the golden sputtered film for the part slipped into thickens, and the etching process process of the UBM layer after cannot being gold-plated eliminates, and leads sometimes
Cause poor flow.When without using inorganic acid conduction salt, the fluctuation of bump height becomes larger without preferred.
Salt is conducted as inorganic acid, uses phosphate.As phosphate, sodium phosphate, potassium phosphate, magnesium phosphate, phosphorus can be illustrated
Sour ammonium is, it is preferable to use potassium phosphate.Inorganic acid conducts the use level of salt for 5~100g/L, preferably 10~80g/L, more preferably
20~70g/L.
Salt is conducted as organic acid, at least uses oxalates.As oxalates, potassium oxalate, sodium oxalate, oxalic acid can be illustrated
Ammonium.The use level of oxalates is calculated as 2.5~50g/L, preferably 10~30g/L by oxalic acid.When less than 2.5g/L, it is latent to generate plated film
Enter, when being greater than 100g/L, plating film outward appearance is easy to become bad.Salt is conducted as the organic acid other than oxalates, lemon can be illustrated
Hydrochlorate, formates.As citrate, formates, potassium citrate, potassium formate can be illustrated.These can be used alone, can also be with
It is used in combination of two or more.Organic acid conduct salt use level be 5~150g/L, preferably 20~140g/L, more preferably 30~
130g/L.When conducting the use level of salt more than above range, covering power is deteriorated sometimes, or phenomenon is burnt in golden plated film generation sometimes.
[water-soluble polysaccharides]
In cyanogen type electrolytic gold plating bath of the invention, well known water-soluble polysaccharides can be used.From the sight of accessibility
Point considers, can illustrate dextrin, alpha-cyclodextrin, beta-cyclodextrin, glucan.These water-soluble polysaccharides both can be used alone,
Two or more kinds may be used.
When the film hardness of au bump after heat treatment is set as the high rigidity of 70~120HV, water-soluble polysaccharides are matched
Resultant is preferably 0.1~50g/L, more preferably 0.5~30g/L.When use level is less than 0.1g/L, au bump after heat treatment
Film hardness is less than 60HV.Such au bump is easy to deform due to the thermo-compression bonding of substrate and semiconductor wafer.Work as semiconductor die
When the circuit of on piece is formed with small spacing, contacted between the au bump of deformation, there may be bad phenomenons in terms of engagement.Separately
Outside, the hardness relative to the conducting particles in anisotropically conducting adhesive when the film hardness of au bump is too low, is then being thermally compressed
In process, conducting particles is buried in au bump.As a result, conducting particles is not hot pressed between au bump and electrode of substrate
It connects.When use level is more than 50g/L, burnt deposit is generated, bad order is caused.
Using the cyanogen type electrolytic gold plating bath of the invention for containing above-mentioned water-soluble polysaccharides, by using being described in detail below
Method carry out plating, can be formed heat treatment after film hardness be 70~120HV au bump.
The film hardness of au bump after heat treatment can be controlled by adjusting type and the use level of water-soluble polysaccharides.
Its reason is unclear, but is presumably due to above-mentioned defined water-soluble polysaccharides and is used as impurity to be ingested to golden film with easy
In property.That is, inhibiting heat treatment by making the water-soluble polysaccharides being cooperated in cyanogen type electrolytic gold plating bath eutectoid in golden film
The recrystallization of gold afterwards.Think it is possible thereby to form the high au bump of the film hardness after heat treatment.
The film hardness of au bump consider conducting particles type and with the relativity of the hardness of pairing metal, Yi Ji electricity
The various conditions such as the spacing width on road select.
[crystallization modifier]
In cyanogen type electrolytic gold plating bath of the invention, addition Tl compound, Pb compound or As compound are adjusted as crystallization
Save agent.As Tl compound, formic acid thallium, thallous malonate, thallium sulfate, thallium nitrate can be illustrated.As Pb compound, lemon can be illustrated
Lead plumbate, plumbi nitras, lead sulfate.It is preferable to use plumbi nitras.As As compound, arsenic trioxide can be illustrated.These Tl compounds,
Pb compound and As compound both can be used alone, and also two or more kinds may be used.
The use level of crystallization modifier can be suitable for determining within the scope without prejudice to the object of the present invention.In general, dense by metal
Degree meter is 0.1mg~100mg/L, preferably 0.5~50mg/L, more preferably 1~30mg/L.Use level is more than 100mg/L
When, it is possible to covering power is deteriorated.In addition, the appearance of obtained golden plated film generates spot (unevenness).Use level is less than 0.1mg/L
When, phenomenon is burnt in obtained golden plated film generation.
[other compositions]
In cyanogen type electrolytic gold plating bath of the invention, in addition to the above ingredients, the object of the invention can not damaged
Contain the ingredients such as pH adjusting agent in range.As pH adjusting agent, can illustrate sodium hydroxide, potassium hydroxide, ammonium hydroxide and phosphoric acid,
Citric acid, oxalic acid.
[forming method of au bump]
By using cyanogen type electrolytic gold plating bath of the invention, plating operation is carried out according to conventional methods, thus, it is possible to be formed
The golden film that film hardness is 70~120HV, film thickness is 10~50 μm.Cyanogen type electrolytic gold plating bath of the invention will be used, in semiconductor
The method that au bump is formed on chip is illustrated referring to Fig.1.
(1) lamination process
Fig. 1 is the sectional view for showing an example of the au bump formed using cyanogen type electrolytic gold plating bath of the invention.Firstly,
The formation of semiconductor wafer 1, which has, forms Al electrode 2 on the face of circuit layer 1'.Then, on the surface of circuit layer 1', covering electricity is formed
The passivating film 3 of road floor 1' and Al electrode 2.In passivating film 3, in the position that a part for making Al electrode 2 is exposed, opening portion is set
3a.TiW sputtered film 4 is formed on the surface of passivating film 3.Passivating film 3 and 2 quilt of Al electrode exposed from the opening portion 3a of passivating film 3
TiW sputtered film 4 covers.Au sputtered film 5 is formed on the surface of TiW sputtered film 4.TiW sputtered film 4 and Au sputtered film 5 constitute salient point
Lower metal (UBM) layer 6.Photoresist film 8 is formed on the surface of UBM layer 6, thus masked (forming exposure mask).On photoresist film 8
The opening portion 8a for exposing a part of Au sputtered film 5 is set.The opening portion 8a of photoresist film 8 is set in photoresist film 8
There are the regions of Al electrode 2 for lower layer.Material as photoresist film 8 is, it is preferable to use negative photoresist etc..
(2) electrolytic gold plating process
The semiconductor wafer 1 of stepped construction will be formed with as plated body, using being suitable for adjusting pH, fluid temperature, electric current
The cyanogen type electrolytic gold plating bath of the invention of density carries out electrolytic gold plating to desired film thickness.With gold plating bath of the invention by blank
Metallising does not select plated body as long as electric conductivity is high.In particular, being suitable for carrying out patterned silicon using photoresist film 8
Au bump is formed on the circuit of chip or on the circuit of compound wafers such as GaAs chip.
Cyanogen type electrolytic gold plating bath of the invention uses preferably under pH4.0~8.0, more preferably makes under pH5.0~7.0
With.When pH is less than 4.0, cathode efficiency is reduced, and sufficient film thickness is not achieved in gained golden film.When pH is more than 8.0, gained golden film
Appearance become redization.
The liquid temperature of cyanogen type electrolytic gold plating bath of the invention is preferably 30~80 DEG C, and more preferably 40~70 DEG C.The liquid of plating bath
When temperature is outside above range, cathode efficiency decline, or the stability of gold plating bath is had lost, it is thus not preferred.
Current density when using cyanogen type electrolytic gold plating bath of the invention considers the composition of electroplate liquid, liquid temperature, other conditions
And it sets.It is thus impossible to lump together, still, for example, at 55 DEG C of liquid temperature using the electroplate liquid that gold concentration is 8g/L when, electricity
Current density is preferably set to 0.5~1.0A/dm2.When not being set as current density appropriate, the characteristic of plating appearance and plated film
It is possible that generating abnormal.In addition, plating bath becomes unstable, the decomposition of electroplating bath components is generated sometimes.
After electrolytic gold plating, the photoresist film 8 of semiconductor wafer 1 is dissolved by the solvent removing.By removing photoresist film 8, no
Exposed by the UBM layer 6 in the region that au bump 7 covers.The UBM layer 6 of exposing is removed by etching etc..As a result, convex not by gold
The region of 7 covering of point, passivating film 3 expose.It is not removed by the process by the UBM layer 6 that au bump 7 covers, maintains stepped construction.
(3) heat treatment procedure
After removing UBM layer 6 and photoresist film 8, the semiconductor wafer 1 for being formed with au bump 7 carries out at 200~300 DEG C
Heat treatment.Heat treatment time is 5 minutes or more, preferably 30~600 minutes.Good baking oven of heat treatment (fine oven) etc..
Good baking oven is heat-treated the necessary time due to that can keep, and chamber interior can be kept to the stipulated time at a set temperature, because
And it is suitable for the heat treatment.After heat treatment, semiconductor wafer 1 is naturally cooled.Temperature reduce process, being recrystallised of gold,
Thus film hardness changes.The film hardness of the au bump obtained by above-mentioned forming method is 70~120HV, with previous gold
Salient point is compared, and hardness is high.
Cyanogen type electrolytic gold plating bath of the invention carries out supplement management by the ingredient to Jin Yuan and composition plating solution, can be used
It is more than 2 circulations." 1 circulation " refers to that the gold in gold plating bath is all plated the state of consumption.
Embodiment
Hereinafter, specifically describing the present invention by embodiment.The present invention is not limited to these embodiments.
As plated body, become Au/TiW/SiO using blank section group2Silicon wafer.The photoresist film of silicon wafer uses
Negative photoresist (JSR society product name: THB-121N).On photoresist film, opened by 20 μm of spacing settings 2 of configuration are patterned
Oral area.The opening shape of one opening portion is the rectangle of 20 μm of short side, 100 μm of long side.The opening shape of another opening portion
It is the square that side length is 100 μm.
According to composition described in table 1-2, the electroplate liquid of embodiment 1~12, the Comparative Examples 1 to 5 is modulated.In the electroplate liquid of modulation
Plated body is impregnated in 1L, under conditions of described in the table 1-2, is carried out electrolysis electroplating operations to golden film with a thickness of 15 μm, then being carried out
Heat treatment.The physical property of obtained au bump is measured by method described below.Measurement result is recorded in table 1-2.
(film hardness (Vickers hardness；HV)〕
In 2 au bumps formed on plated body, the square au bump for the use of side length being 100 μm, measurement heat treatment
Hardness preceding and that the au bump after heat treatment in 30 minutes is carried out at 250 DEG C.Measurement uses the small hardness test of ミ Star ト ヨ society's system
Machine HM-221 is carried out.Determination condition is that will measure pressure head to be kept for 10 seconds under 25gf load.
(bath stability)
After implementing electrolytic gold plating on plated body, the state of visual observations gold plating bath.
Zero: decomposition and precipitating being not observed in gold plating bath.
×: decomposition or precipitating are observed in gold plating bath.
(plating film outward appearance)
Using the appearance for the au bump that micro- sem observation is formed on plated body, visual assessment tone, spot are (uneven
It is even), surface roughness.
Zero: exception is not observed in terms of tone, spot.
×: exception is observed in terms of tone, spot.
(plated film slips into)
Using the appearance for the au bump that micro- sem observation is formed on plated body, visual assessment plated film is slipped into.
Zero: plated film is not observed and slips into.
×: observe that plated film slips into.
Table 2
The film hardness of the au bump formed in embodiment 1~12 after heat treatment is high in the range of 70~120HV
Hardness.The tone of arbitrary au bump is lemon yellow, and the semi-glossy of (uneven) of being speckless~lacklustre is well
Appearance.Bath stability is also good.
The film hardness of the au bump formed in comparative example 1 after heat treatment is less than 70HV, is soft.Tone is lemon
Huang obtains the semi-glossy~lacklustre good appearance being speckless.Bath stability is good.
The film hardness of the au bump formed in comparative example 2 after heat treatment is less than 70HV, is soft.In addition, in photoetching
Slipping into for plated film is found between glue and chip.The appearance of obtained salient point be speckless, semi-glossy~lacklustre it is good outer
It sees.Bath stability is good.
The film hardness of the au bump formed in comparative example 3 after heat treatment is 90HV, is high rigidity.But in photoresist
Slipping into for plated film is found between chip.The appearance of obtained salient point be speckless, semi-glossy~lacklustre good appearance.
Bath stability is good.
The film hardness of the au bump formed in comparative example 4 after heat treatment is less than 70HV, is soft.In addition, in photoetching
Slipping into for plated film is found between glue and chip.The appearance of obtained salient point be speckless, semi-glossy~lacklustre it is good outer
It sees.Bath stability is good.
The film hardness of the au bump formed in comparative example 5 after heat treatment is 90HV, is high rigidity.In addition, in photoresist
Slipping into for plated film is found between chip.There are spot (uneven) for the appearance of obtained salient point.Bath stability is good.
Symbol description
1 semiconductor wafer
1' circuit layer
2 Al electrodes
3 passivating films
The opening portion of 3a passivating film
4 TiW sputtered films
5 gold medal sputtered films
6 UBM layers
7 au bumps
The surface of 7a au bump
8 photoresist films
The opening portion of 8a photoresist film
10 printed circuit boards
11 hard substrates
12 substrate wiring patterns
14 electrode of substrate
16 semiconductor chips
18 sealing materials
20 anisotropically conducting adhesives
Claims (4)
1. au bump, which is formed, uses cyanogen type electrolytic gold plating bath, which is characterized in that contain:
As the cyaniding gold salt of Jin Yuan, down payment 0.1~15g/L of densimeter,
Oxalates, 2.5~50g/L based on oxalic acid,
Inorganic acid conduction salt, 5~100g/L,
Water-soluble polysaccharides, 0.1~50g/L, and
Crystallization modifier, by 0.1~100mg/L of metal densimeter；
Above-mentioned water-soluble polysaccharides inhibit the recrystallization of the gold after heat treatment.
2. au bump described in claim 1, which is formed, uses cyanogen type electrolytic gold plating bath, wherein above-mentioned water-soluble polysaccharides are selected from paste
It is one kind or two or more in essence, alpha-cyclodextrin, beta-cyclodextrin and glucan.
3. au bump described in claim 1, which is formed, uses cyanogen type electrolytic gold plating bath, wherein above-mentioned crystallization modifier is selected from Tlization
It closes one kind or two or more in object, Pb compound and As compound.
4. method for forming bump, wherein require 1 to 3 described in any item gold in patterned semiconductor die on piece right to use benefit
After salient point formation carries out electrolytic gold plating with cyanogen type electrolytic gold plating bath, by being carried out at 200~300 DEG C at 5~600 minutes heat
Reason forms the au bump that film hardness is 70~120HV.
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2014-120323 | 2014-06-11 | ||
| JP2014120323A JP6393526B2 (en) | 2014-06-11 | 2014-06-11 | Cyan-based electrolytic gold plating bath and bump forming method using the same |
| PCT/JP2015/063991 WO2015190218A1 (en) | 2014-06-11 | 2015-05-15 | Cyanide electrolytic gold plating bath and bump formation method using same |
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| Publication Number | Publication Date |
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| CN106460213A CN106460213A (en) | 2017-02-22 |
| CN106460213B true CN106460213B (en) | 2019-01-29 |
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| JP (1) | JP6393526B2 (en) |
| KR (2) | KR20170016823A (en) |
| CN (1) | CN106460213B (en) |
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| WO (1) | WO2015190218A1 (en) |
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| CN105543910B (en) * | 2015-12-25 | 2018-01-30 | 西南石油大学 | A kind of nickel tungsten composite deposite and preparation method thereof |
| WO2022140770A1 (en) * | 2020-12-21 | 2022-06-30 | Northwestern University | SUPRAMOLECULAR GOLD STRIPPING FROM ACTIVATED CARBON USING α-CYCLODEXTRIN |
| CN113913879B (en) * | 2021-09-30 | 2022-08-09 | 深圳市联合蓝海黄金材料科技股份有限公司 | Cyanide-free electrogilding solution, use thereof, method for producing gold bumps by electrogilding, gold bumps and electronic components |
| CN116240597B (en) * | 2022-12-29 | 2024-03-26 | 华为技术有限公司 | Electroplating solution and application thereof |
| CN115928161B (en) * | 2022-12-29 | 2024-08-27 | 华为技术有限公司 | Gold electroplating solution and application thereof, gold bump, preparation method of gold bump, electronic component and electronic equipment |
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| CN101363128A (en) * | 2007-08-07 | 2009-02-11 | 恩伊凯慕凯特股份有限公司 | Non-cyanogen type electrolytic gold plating bath for bump forming |
| CN103290440A (en) * | 2012-02-22 | 2013-09-11 | 美泰乐科技(日本)股份有限公司 | Non-cyanide gold electroplating bath for formation of gold bumps and formation method of gold bumps |
Also Published As
| Publication number | Publication date |
|---|---|
| JP2016000839A (en) | 2016-01-07 |
| TW201610240A (en) | 2016-03-16 |
| KR20170016823A (en) | 2017-02-14 |
| TWI617707B (en) | 2018-03-11 |
| KR20190057163A (en) | 2019-05-27 |
| JP6393526B2 (en) | 2018-09-19 |
| CN106460213A (en) | 2017-02-22 |
| WO2015190218A1 (en) | 2015-12-17 |
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