CN106415859B - 半导体发光元件及其制造方法 - Google Patents
半导体发光元件及其制造方法 Download PDFInfo
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- CN106415859B CN106415859B CN201580029434.7A CN201580029434A CN106415859B CN 106415859 B CN106415859 B CN 106415859B CN 201580029434 A CN201580029434 A CN 201580029434A CN 106415859 B CN106415859 B CN 106415859B
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- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 2
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- 230000003628 erosive effect Effects 0.000 description 2
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 2
- 229910052737 gold Inorganic materials 0.000 description 2
- 230000002401 inhibitory effect Effects 0.000 description 2
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- OGIDPMRJRNCKJF-UHFFFAOYSA-N titanium oxide Inorganic materials [Ti]=O OGIDPMRJRNCKJF-UHFFFAOYSA-N 0.000 description 2
- BVPWJMCABCPUQY-UHFFFAOYSA-N 4-amino-5-chloro-2-methoxy-N-[1-(phenylmethyl)-4-piperidinyl]benzamide Chemical compound COC1=CC(N)=C(Cl)C=C1C(=O)NC1CCN(CC=2C=CC=CC=2)CC1 BVPWJMCABCPUQY-UHFFFAOYSA-N 0.000 description 1
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- 229910001218 Gallium arsenide Inorganic materials 0.000 description 1
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Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/44—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the coatings, e.g. passivation layer or anti-reflective coating
- H01L33/46—Reflective coating, e.g. dielectric Bragg reflector
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/04—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a quantum effect structure or superlattice, e.g. tunnel junction
- H01L33/06—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a quantum effect structure or superlattice, e.g. tunnel junction within the light emitting region, e.g. quantum confinement structure or tunnel barrier
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/14—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a carrier transport control structure, e.g. highly-doped semiconductor layer or current-blocking structure
- H01L33/145—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a carrier transport control structure, e.g. highly-doped semiconductor layer or current-blocking structure with a current-blocking structure
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/26—Materials of the light emitting region
- H01L33/30—Materials of the light emitting region containing only elements of Group III and Group V of the Periodic Table
- H01L33/32—Materials of the light emitting region containing only elements of Group III and Group V of the Periodic Table containing nitrogen
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/36—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes
- H01L33/38—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes with a particular shape
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/36—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes
- H01L33/38—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes with a particular shape
- H01L33/382—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes with a particular shape the electrode extending partially in or entirely through the semiconductor body
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/15—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components having potential barriers, specially adapted for light emission
- H01L27/153—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components having potential barriers, specially adapted for light emission in a repetitive configuration, e.g. LED bars
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2933/00—Details relating to devices covered by the group H01L33/00 but not provided for in its subgroups
- H01L2933/0008—Processes
- H01L2933/0025—Processes relating to coatings
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/0004—Devices characterised by their operation
- H01L33/002—Devices characterised by their operation having heterojunctions or graded gap
- H01L33/0025—Devices characterised by their operation having heterojunctions or graded gap comprising only AIIIBV compounds
Landscapes
- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Led Devices (AREA)
Abstract
Description
Claims (14)
Applications Claiming Priority (11)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR1020140067575A KR101588825B1 (ko) | 2014-06-03 | 2014-06-03 | 반도체 발광소자 |
KR10-2014-0067575 | 2014-06-03 | ||
KR10-2014-0140891 | 2014-10-17 | ||
KR1020140140892A KR20160046010A (ko) | 2014-10-17 | 2014-10-17 | 반도체 발광소자 |
KR10-2014-0140892 | 2014-10-17 | ||
KR1020140140891A KR20160046009A (ko) | 2014-10-17 | 2014-10-17 | 반도체 발광소자 |
KR10-2015-0008036 | 2015-01-16 | ||
KR1020150008036A KR101609763B1 (ko) | 2015-01-16 | 2015-01-16 | 반도체 발광소자 |
KR10-2015-0032927 | 2015-03-10 | ||
KR1020150032927A KR101697961B1 (ko) | 2015-03-10 | 2015-03-10 | 반도체 발광소자, 및 이의 제조방법 |
PCT/KR2015/005582 WO2015186972A1 (ko) | 2014-06-03 | 2015-06-03 | 반도체 발광소자 및 이의 제조방법 |
Publications (2)
Publication Number | Publication Date |
---|---|
CN106415859A CN106415859A (zh) | 2017-02-15 |
CN106415859B true CN106415859B (zh) | 2018-09-25 |
Family
ID=54766991
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CN201580029434.7A Active CN106415859B (zh) | 2014-06-03 | 2015-06-03 | 半导体发光元件及其制造方法 |
Country Status (3)
Country | Link |
---|---|
US (1) | US10032960B2 (zh) |
CN (1) | CN106415859B (zh) |
WO (1) | WO2015186972A1 (zh) |
Families Citing this family (14)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2015190817A1 (ko) * | 2014-06-10 | 2015-12-17 | 주식회사 세미콘라이트 | 반도체 발광소자 |
DE102014116512A1 (de) * | 2014-11-12 | 2016-05-12 | Osram Opto Semiconductors Gmbh | Optoelektronisches Halbleiterbauelement und Vorrichtung mit einem optoelektronischen Halbleiterbauelement |
KR102641239B1 (ko) * | 2015-07-10 | 2024-02-29 | 서울바이오시스 주식회사 | 발광 다이오드, 그것을 제조하는 방법 및 그것을 갖는 발광 소자 모듈 |
CN110383509B (zh) * | 2016-12-06 | 2022-12-13 | 苏州立琻半导体有限公司 | 发光器件 |
TWI778010B (zh) * | 2017-01-26 | 2022-09-21 | 晶元光電股份有限公司 | 發光元件 |
US10873311B2 (en) * | 2017-02-15 | 2020-12-22 | Skyworks Solutions, Inc. | Acoustic resonators with reduced loss characteristics and methods of manufacturing same |
KR102382037B1 (ko) * | 2017-05-04 | 2022-04-04 | 서울바이오시스 주식회사 | 고 신뢰성의 발광 다이오드 |
KR102420917B1 (ko) * | 2018-01-16 | 2022-07-15 | 엘지전자 주식회사 | 반도체 발광 소자를 이용한 차량용 램프 |
US11600755B2 (en) * | 2018-07-05 | 2023-03-07 | Semicon Light Co., Ltd. | Semiconductor light-emitting device and manufacturing method therefor |
DE102018117018A1 (de) * | 2018-07-13 | 2020-01-16 | Osram Opto Semiconductors Gmbh | Optoelektronisches halbleiterbauelement mit einer silberhaltigen stromaufweitungsstruktur und optoelektronische vorrichtung |
TWI706537B (zh) * | 2019-05-28 | 2020-10-01 | 友達光電股份有限公司 | 自發光元件及發光裝置的製造方法 |
CN113345993B (zh) * | 2021-05-31 | 2022-11-22 | 厦门市三安光电科技有限公司 | 一种发光二极管及其制备方法 |
CN115483323A (zh) * | 2021-05-31 | 2022-12-16 | 京东方科技集团股份有限公司 | 发光器件、发光基板和发光器件的制作方法 |
US20230122492A1 (en) * | 2021-10-14 | 2023-04-20 | Lumileds Llc | Narrowband reflector for micro-led arrays |
Citations (2)
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KR100960280B1 (ko) * | 2008-12-02 | 2010-06-04 | 주식회사 에피밸리 | 3족 질화물 반도체 발광소자 |
CN103180975A (zh) * | 2010-09-01 | 2013-06-26 | 三星电子株式会社 | 半导体发光二极管芯片、发光器件及其制造方法 |
Family Cites Families (10)
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KR100862453B1 (ko) * | 2004-11-23 | 2008-10-08 | 삼성전기주식회사 | GaN 계 화합물 반도체 발광소자 |
JP5179766B2 (ja) * | 2007-03-08 | 2013-04-10 | スタンレー電気株式会社 | 半導体発光装置およびその製造方法 |
KR101666442B1 (ko) | 2010-03-25 | 2016-10-17 | 엘지이노텍 주식회사 | 발광 다이오드 및 이를 포함하는 발광 소자 패키지 |
KR101182189B1 (ko) * | 2011-03-03 | 2012-09-12 | 주식회사 세미콘라이트 | 3족 질화물 반도체 발광소자 |
KR101209163B1 (ko) * | 2011-04-19 | 2012-12-06 | 주식회사 세미콘라이트 | 반도체 발광소자 |
EP2784832B1 (en) | 2012-01-13 | 2019-03-27 | Semicon Light Co. Ltd. | Semiconductor light emitting device |
KR101226706B1 (ko) * | 2012-01-13 | 2013-01-25 | 주식회사 세미콘라이트 | 반도체 발광소자 |
EP2782147B1 (en) | 2012-07-18 | 2020-03-11 | Semicon Light Co. Ltd. | Method for manufacturing semiconductor light-emitting element |
KR101403632B1 (ko) * | 2012-09-05 | 2014-06-05 | 주식회사 세미콘라이트 | 반도체 발광소자 |
US9312453B2 (en) * | 2013-04-30 | 2016-04-12 | Semicon Light Co., Ltd. | Semiconductor light emitting device |
-
2015
- 2015-06-03 CN CN201580029434.7A patent/CN106415859B/zh active Active
- 2015-06-03 US US15/316,125 patent/US10032960B2/en active Active
- 2015-06-03 WO PCT/KR2015/005582 patent/WO2015186972A1/ko active Application Filing
Patent Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR100960280B1 (ko) * | 2008-12-02 | 2010-06-04 | 주식회사 에피밸리 | 3족 질화물 반도체 발광소자 |
CN103180975A (zh) * | 2010-09-01 | 2013-06-26 | 三星电子株式会社 | 半导体发光二极管芯片、发光器件及其制造方法 |
Also Published As
Publication number | Publication date |
---|---|
CN106415859A (zh) | 2017-02-15 |
WO2015186972A1 (ko) | 2015-12-10 |
US20170125641A1 (en) | 2017-05-04 |
US10032960B2 (en) | 2018-07-24 |
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